ES8205074A1 - Perfeccionamientos en aparatos semiconductores que incluyen una red para regenerar el estado de memoria de celulas de memoria de capacitor semiconductor. - Google Patents

Perfeccionamientos en aparatos semiconductores que incluyen una red para regenerar el estado de memoria de celulas de memoria de capacitor semiconductor.

Info

Publication number
ES8205074A1
ES8205074A1 ES498280A ES498280A ES8205074A1 ES 8205074 A1 ES8205074 A1 ES 8205074A1 ES 498280 A ES498280 A ES 498280A ES 498280 A ES498280 A ES 498280A ES 8205074 A1 ES8205074 A1 ES 8205074A1
Authority
ES
Spain
Prior art keywords
capacitor
memory cell
writing
refresh
mos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES498280A
Other languages
English (en)
Other versions
ES498280A0 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of ES8205074A1 publication Critical patent/ES8205074A1/es
Publication of ES498280A0 publication Critical patent/ES498280A0/es
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/402—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration individual to each memory cell, i.e. internal refresh

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)

Abstract

CELULA DE MEMORIA CON RED DE REGENERACION AUTOMATICA. ESTA FORMADA POR UN CAPACITOR MOS (CS) QUE ALMACENA LA INFORMACION; POR UNA SERIE DE TRANSISTORES MOS (T1, T2, T3) Y POR UN CONDENSADOR (CL). PARA REALIZAR LA ESCRITURA DE INFORMACION SE APLICA UN IMPULSO NEGATICO EN UNA LINEA DE BITIOS (B) Y UN IMPULSO POSITIVO EN UNA LINEA DE PALABRAS (W), MIENTRAS QUE PARA REALIZAR LA LECTURA SE MANTIENE LA LINEA DE BITIOS A TENSION POSITIVA Y SE APLICA EN LA DE PALABRAS UN IMPULSO POSITIVO. POR MEDIO DE DOS TRANSISTORES (T2, T3), DEL CONDENSADOR Y DE UNA TERCERA LINEA (L) SE CONECTA A UNA FUENTE DE CORRIENTE ALTERNA (13)
ES498280A 1980-01-07 1980-12-31 Perfeccionamientos en aparatos semiconductores que incluyen una red para regenerar el estado de memoria de celulas de memoria de capacitor semiconductor. Granted ES498280A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/109,777 US4292677A (en) 1980-01-07 1980-01-07 Self-refreshed capacitor memory cell

Publications (2)

Publication Number Publication Date
ES8205074A1 true ES8205074A1 (es) 1982-06-01
ES498280A0 ES498280A0 (es) 1982-06-01

Family

ID=22329511

Family Applications (1)

Application Number Title Priority Date Filing Date
ES498280A Granted ES498280A0 (es) 1980-01-07 1980-12-31 Perfeccionamientos en aparatos semiconductores que incluyen una red para regenerar el estado de memoria de celulas de memoria de capacitor semiconductor.

Country Status (12)

Country Link
US (1) US4292677A (es)
JP (1) JPS56101695A (es)
BE (1) BE886964A (es)
CA (1) CA1135853A (es)
DD (1) DD156857A5 (es)
DE (1) DE3100129A1 (es)
ES (1) ES498280A0 (es)
FR (1) FR2474742A1 (es)
GB (1) GB2067867B (es)
IT (1) IT1134949B (es)
NL (1) NL8100020A (es)
SE (1) SE8009001L (es)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
DE3235835A1 (de) * 1982-09-28 1984-03-29 Siemens AG, 1000 Berlin und 8000 München Halbleiter-speicherzelle
US5003361A (en) * 1987-08-31 1991-03-26 At&T Bell Laboratories Active dynamic memory cell
DE59904562D1 (de) 1998-09-30 2003-04-17 Infineon Technologies Ag Single-port speicherzelle
US6768668B2 (en) * 2001-06-12 2004-07-27 Infineon Technologies Aktiengesellschaft Converting volatile memory to non-volatile memory
US6686729B1 (en) 2002-10-15 2004-02-03 Texas Instruments Incorporated DC/DC switching regulator having reduced switching loss

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4030083A (en) * 1975-04-04 1977-06-14 Bell Telephone Laboratories, Incorporated Self-refreshed capacitor memory cell
US4122550A (en) * 1978-02-08 1978-10-24 Intel Corporation Low power random access memory with self-refreshing cells
US4203159A (en) * 1978-10-05 1980-05-13 Wanlass Frank M Pseudostatic electronic memory

Also Published As

Publication number Publication date
BE886964A (fr) 1981-05-04
SE8009001L (sv) 1981-07-08
US4292677A (en) 1981-09-29
NL8100020A (nl) 1981-08-03
GB2067867B (en) 1983-10-26
IT1134949B (it) 1986-08-20
CA1135853A (en) 1982-11-16
IT8119020A0 (it) 1981-01-06
FR2474742B1 (es) 1984-01-27
DE3100129A1 (de) 1981-11-19
DD156857A5 (de) 1982-09-22
ES498280A0 (es) 1982-06-01
GB2067867A (en) 1981-07-30
FR2474742A1 (fr) 1981-07-31
JPS56101695A (en) 1981-08-14

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