ES510300A0 - Sistema de fusion para el crecimiento de una placa dendritica. - Google Patents

Sistema de fusion para el crecimiento de una placa dendritica.

Info

Publication number
ES510300A0
ES510300A0 ES510300A ES510300A ES510300A0 ES 510300 A0 ES510300 A0 ES 510300A0 ES 510300 A ES510300 A ES 510300A ES 510300 A ES510300 A ES 510300A ES 510300 A0 ES510300 A0 ES 510300A0
Authority
ES
Spain
Prior art keywords
dendritic
growth
plate
fusion system
fusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
ES510300A
Other languages
English (en)
Other versions
ES8306802A1 (es
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of ES8306802A1 publication Critical patent/ES8306802A1/es
Publication of ES510300A0 publication Critical patent/ES510300A0/es
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1068—Seed pulling including heating or cooling details [e.g., shield configuration]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Inorganic Fibers (AREA)
ES510300A 1981-07-10 1982-03-10 Sistema de fusion para el crecimiento de una placa dendritica. Granted ES510300A0 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/282,334 US4389377A (en) 1981-07-10 1981-07-10 Apparatus for growing a dendritic web

Publications (2)

Publication Number Publication Date
ES8306802A1 ES8306802A1 (es) 1983-06-01
ES510300A0 true ES510300A0 (es) 1983-06-01

Family

ID=23081034

Family Applications (1)

Application Number Title Priority Date Filing Date
ES510300A Granted ES510300A0 (es) 1981-07-10 1982-03-10 Sistema de fusion para el crecimiento de una placa dendritica.

Country Status (7)

Country Link
US (1) US4389377A (es)
EP (1) EP0069821B1 (es)
JP (1) JPS589896A (es)
AU (1) AU554202B2 (es)
DE (1) DE3272809D1 (es)
ES (1) ES510300A0 (es)
IN (1) IN161381B (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5942538A (ja) * 1982-09-03 1984-03-09 Kiyoshi Oguchi 電離放射線感応ネガ型レジスト
IN161924B (es) * 1984-10-29 1988-02-27 Westinghouse Electric Corp
US4698120A (en) * 1984-10-29 1987-10-06 Westinghouse Electric Corp. Barrier for quartz crucible for drawing silicon dendritic web and method of use
US4751059A (en) * 1986-12-05 1988-06-14 Westinghouse Electric Corp. Apparatus for growing dendritic web crystals of constant width
US4828808A (en) * 1987-09-02 1989-05-09 The United States Of America As Represented By The United States Department Of Energy Apparatus for silicon web growth of higher output and improved growth stability
DE3736339A1 (de) * 1987-10-27 1989-05-11 Siemens Ag Anordnung zum kontinuierlichen aufschmelzen von siliziumgranulat fuer das bandziehverfahren
DE3840445C2 (de) * 1987-12-03 1996-08-14 Toshiba Ceramics Co Vorrichtung und Verfahren zum Ziehen eines Einkristalls
JPH0633218B2 (ja) * 1987-12-08 1994-05-02 日本鋼管株式会社 シリコン単結晶の製造装置
US4919901A (en) * 1987-12-31 1990-04-24 Westinghouse Electric Corp. Barrier design for crucibles for silicon dendritic web growth
EP0340941A1 (en) * 1988-04-28 1989-11-08 Nkk Corporation Method and apparatus for manufacturing silicon single crystals
AU632886B2 (en) * 1990-01-25 1993-01-14 Ebara Corporation Melt replenishment system for dendritic web growth
US5913980A (en) * 1996-04-10 1999-06-22 Ebara Solar, Inc. Method for removing complex oxide film growth on silicon crystal

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL237834A (es) * 1958-04-09
GB939102A (en) * 1959-02-18 1963-10-09 Philco Corp Improvements in and relating to the production of crystals, and apparatus for use therein
US3096158A (en) * 1959-09-25 1963-07-02 Gerthart K Gaule Apparatus for pulling single crystals in the form of long flat strips from a melt
FR1320741A (fr) * 1961-10-06 1963-03-15 Gen Electric Méthode de grossissement des cristaux
US3977934A (en) * 1975-01-02 1976-08-31 Motorola, Inc. Silicon manufacture
SU661966A1 (ru) * 1976-11-23 1980-04-05 Всесоюзный Научно-Исследовательский Институт Монокристаллов И Особо Чистых Химических Веществ "Вниимонокристалл" Устройство дл выт гивани монокристаллов из расплава
US4271129A (en) * 1979-03-06 1981-06-02 Rca Corporation Heat radiation deflectors within an EFG crucible
JPS5611675A (en) * 1979-07-04 1981-02-05 Marantz Japan Inc Key-touch strength changing circuit for automatic playing piano

Also Published As

Publication number Publication date
JPH0240638B2 (es) 1990-09-12
JPS589896A (ja) 1983-01-20
AU8060182A (en) 1983-01-13
IN161381B (es) 1987-11-21
ES8306802A1 (es) 1983-06-01
EP0069821B1 (en) 1986-08-27
DE3272809D1 (en) 1986-10-02
AU554202B2 (en) 1986-08-14
US4389377A (en) 1983-06-21
EP0069821A1 (en) 1983-01-19

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Legal Events

Date Code Title Description
FD1A Patent lapsed

Effective date: 20040601