ES405217A1 - Un dispositivo semiconductor adecuado para utilizacion en una disposicion de circuito que tiene al menos un elemento que es activado por radiacion. - Google Patents

Un dispositivo semiconductor adecuado para utilizacion en una disposicion de circuito que tiene al menos un elemento que es activado por radiacion.

Info

Publication number
ES405217A1
ES405217A1 ES405217A ES405217A ES405217A1 ES 405217 A1 ES405217 A1 ES 405217A1 ES 405217 A ES405217 A ES 405217A ES 405217 A ES405217 A ES 405217A ES 405217 A1 ES405217 A1 ES 405217A1
Authority
ES
Spain
Prior art keywords
base
zone
collector
emitter
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
ES405217A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of ES405217A1 publication Critical patent/ES405217A1/es
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0214Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/1443Devices controlled by radiation with at least one potential jump or surface barrier
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/08Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only controlled by light
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03GCONTROL OF AMPLIFICATION
    • H03G3/00Gain control in amplifiers or frequency changers
    • H03G3/02Manually-operated control
    • H03G3/04Manually-operated control in untuned amplifiers
    • H03G3/10Manually-operated control in untuned amplifiers having semiconductor devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K19/00Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/14Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B10/00Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/80Optical aspects relating to the use of optical transmission for specific applications, not provided for in groups H04B10/03 - H04B10/70, e.g. optical power feeding or optical transmission through water
    • H04B10/806Arrangements for feeding power
    • H04B10/807Optical power feeding, i.e. transmitting power using an optical signal
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04RLOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R25/00Deaf-aid sets, i.e. electro-acoustic or electro-mechanical hearing aids; Electric tinnitus maskers providing an auditory perception

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Bipolar Transistors (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
ES405217A 1971-03-20 1972-07-27 Un dispositivo semiconductor adecuado para utilizacion en una disposicion de circuito que tiene al menos un elemento que es activado por radiacion. Expired ES405217A1 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7103772A NL7103772A (es) 1971-03-20 1971-03-20

Publications (1)

Publication Number Publication Date
ES405217A1 true ES405217A1 (es) 1975-08-16

Family

ID=19812729

Family Applications (2)

Application Number Title Priority Date Filing Date
ES400926A Expired ES400926A1 (es) 1971-03-20 1972-03-18 Perfeccionamientos introducidos en circuitos que tienen al menos un elemento de circuito que es activado por medio de radiacion.
ES405217A Expired ES405217A1 (es) 1971-03-20 1972-07-27 Un dispositivo semiconductor adecuado para utilizacion en una disposicion de circuito que tiene al menos un elemento que es activado por radiacion.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES400926A Expired ES400926A1 (es) 1971-03-20 1972-03-18 Perfeccionamientos introducidos en circuitos que tienen al menos un elemento de circuito que es activado por medio de radiacion.

Country Status (2)

Country Link
ES (2) ES400926A1 (es)
NL (1) NL7103772A (es)

Also Published As

Publication number Publication date
NL7103772A (es) 1972-09-22
ES400926A1 (es) 1975-08-16

Similar Documents

Publication Publication Date Title
SE7701884L (sv) Halvledaranordning med sekerhetskrets
ES326632A1 (es) Un dispositivo semiconductor.
ES328172A1 (es) Un dispositivo semiconductor compuesto.
ES329326A1 (es) Un dispositivo de conmutacion simetrica semiconductor de capas multiples.
SE7714902L (sv) Effekttransistor
IT995781B (it) Dispositivi semiconduttori
ES323139A1 (es) Un dispositivo semiconductor de estado solido.
ES408617A1 (es) Un metodo para la fabricacion de un dispositivo semiconduc-tor.
ES405217A1 (es) Un dispositivo semiconductor adecuado para utilizacion en una disposicion de circuito que tiene al menos un elemento que es activado por radiacion.
GB969592A (en) A semi-conductor device
ES360290A1 (es) Perfeccionamientos en la construccion de dispositivos semi-conductores.
ES329361A1 (es) Un dispositivo semiconductor de union.
ES403881A1 (es) Un dispositivo semiconductor.
ES385881A1 (es) Un dispositivo semiconductor.
ES264383A1 (es) Metodo de fabricaciƫn de un transistor
ES352147A1 (es) Una disposicion de circuito monolitico que tiene un par de transistores complementarios adaptados.
GB1102836A (en) Multi-junction semi-conductor elements
ES329228A1 (es) Un dispositivo transistor.
ES325287A1 (es) Mejoras en un dispositivo semiconductor
ES371158A1 (es) Una disposicion de circuito monolitico.
ES385353A1 (es) Un dispositivo semiconductor.
JPS5289473A (en) Transistor
ES332522A1 (es) Dispositivo transistor de alta tension.
ES397884A1 (es) Un dispositivo semiconductor disenado para funcionar a altapotencia y alta frecuencia.
ES433346A1 (es) Dispositivo semiconductor.