ES323139A1 - Un dispositivo semiconductor de estado solido. - Google Patents
Un dispositivo semiconductor de estado solido.Info
- Publication number
- ES323139A1 ES323139A1 ES0323139A ES323139A ES323139A1 ES 323139 A1 ES323139 A1 ES 323139A1 ES 0323139 A ES0323139 A ES 0323139A ES 323139 A ES323139 A ES 323139A ES 323139 A1 ES323139 A1 ES 323139A1
- Authority
- ES
- Spain
- Prior art keywords
- translation
- machine
- semiconductor device
- solid state
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000007787 solid Substances 0.000 title abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 239000000463 material Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000011241 protective layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Thyristors (AREA)
- Photovoltaic Devices (AREA)
- Light Receiving Elements (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US404352A US3341377A (en) | 1964-10-16 | 1964-10-16 | Surface-passivated alloy semiconductor devices and method for producing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
ES323139A1 true ES323139A1 (es) | 1966-12-01 |
Family
ID=23599273
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0323139A Expired ES323139A1 (es) | 1964-10-16 | 1966-02-16 | Un dispositivo semiconductor de estado solido. |
Country Status (3)
Country | Link |
---|---|
US (1) | US3341377A (es) |
ES (1) | ES323139A1 (es) |
NL (1) | NL6511474A (es) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1295237B (de) * | 1964-10-22 | 1969-05-14 | Siemens Ag | Druckempfindliche Halbleiteranordnung und Verfahren zu ihrer Herstellung |
US3410735A (en) * | 1965-10-22 | 1968-11-12 | Motorola Inc | Method of forming a temperature compensated reference diode |
GB1099049A (en) * | 1965-12-28 | 1968-01-10 | Telefunken Patent | A method of manufacturing transistors |
US3510368A (en) * | 1966-08-29 | 1970-05-05 | Motorola Inc | Method of making a semiconductor device |
US3519900A (en) * | 1967-11-13 | 1970-07-07 | Motorola Inc | Temperature compensated reference diodes and methods for making same |
US3612959A (en) * | 1969-01-31 | 1971-10-12 | Unitrode Corp | Planar zener diodes having uniform junction breakdown characteristics |
US3649882A (en) * | 1970-05-13 | 1972-03-14 | Albert Louis Hoffman | Diffused alloyed emitter and the like and a method of manufacture thereof |
JPS56615Y1 (es) * | 1973-12-20 | 1981-01-09 | ||
US4075649A (en) * | 1975-11-25 | 1978-02-21 | Siemens Corporation | Single chip temperature compensated reference diode and method for making same |
US4978636A (en) * | 1989-12-26 | 1990-12-18 | Motorola Inc. | Method of making a semiconductor diode |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE539649A (es) * | 1954-04-01 | |||
NL99556C (es) * | 1961-03-30 | |||
NL297002A (es) * | 1962-08-23 | 1900-01-01 | ||
US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
-
1964
- 1964-10-16 US US404352A patent/US3341377A/en not_active Expired - Lifetime
-
1965
- 1965-09-02 NL NL6511474A patent/NL6511474A/xx unknown
-
1966
- 1966-02-16 ES ES0323139A patent/ES323139A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3341377A (en) | 1967-09-12 |
NL6511474A (es) | 1966-04-18 |
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