ES321208A1 - Un metodo de producir un dispositivo semiconductor. - Google Patents
Un metodo de producir un dispositivo semiconductor.Info
- Publication number
- ES321208A1 ES321208A1 ES0321208A ES321208A ES321208A1 ES 321208 A1 ES321208 A1 ES 321208A1 ES 0321208 A ES0321208 A ES 0321208A ES 321208 A ES321208 A ES 321208A ES 321208 A1 ES321208 A1 ES 321208A1
- Authority
- ES
- Spain
- Prior art keywords
- producing
- translation
- semiconductor device
- machine
- legally binding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000011248 coating agent Substances 0.000 abstract 2
- 238000000576 coating method Methods 0.000 abstract 2
- 239000011810 insulating material Substances 0.000 abstract 2
- 239000004020 conductor Substances 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/923—Diffusion through a layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Formation Of Insulating Films (AREA)
- Thyristors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US421278A US3341380A (en) | 1964-12-28 | 1964-12-28 | Method of producing semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES321208A1 true ES321208A1 (es) | 1966-07-16 |
Family
ID=23669905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES0321208A Expired ES321208A1 (es) | 1964-12-28 | 1965-12-28 | Un metodo de producir un dispositivo semiconductor. |
Country Status (3)
Country | Link |
---|---|
US (1) | US3341380A (es) |
ES (1) | ES321208A1 (es) |
FR (1) | FR1461972A (es) |
Families Citing this family (26)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3457469A (en) * | 1965-11-15 | 1969-07-22 | Motorola Inc | Noise diode having an alloy zener junction |
US3444442A (en) * | 1966-04-27 | 1969-05-13 | Nippon Electric Co | Avalanche transistor having reduced width in depletion region adjacent gate surface |
US3544864A (en) * | 1967-08-31 | 1970-12-01 | Gen Telephone & Elect | Solid state field effect device |
NL6809127A (es) * | 1968-06-28 | 1969-12-30 | ||
DE2006729C3 (de) * | 1970-02-13 | 1980-02-14 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Herstellung einer Halbleiterdiode |
US3914781A (en) * | 1971-04-13 | 1975-10-21 | Sony Corp | Gate controlled rectifier |
US3881179A (en) * | 1972-08-23 | 1975-04-29 | Motorola Inc | Zener diode structure having three terminals |
US4156248A (en) * | 1977-01-31 | 1979-05-22 | Rca Corporation | Gate turn-off semiconductor controlled rectifier device with highly doped buffer region portion |
CH622127A5 (es) * | 1977-12-21 | 1981-03-13 | Bbc Brown Boveri & Cie | |
US4225874A (en) * | 1978-03-09 | 1980-09-30 | Rca Corporation | Semiconductor device having integrated diode |
CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
JPS56126968A (en) * | 1980-03-10 | 1981-10-05 | Mitsubishi Electric Corp | Semiconductor device |
GB2134705B (en) * | 1983-01-28 | 1985-12-24 | Philips Electronic Associated | Semiconductor devices |
US4648174A (en) * | 1985-02-05 | 1987-03-10 | General Electric Company | Method of making high breakdown voltage semiconductor device |
US4742377A (en) * | 1985-02-21 | 1988-05-03 | General Instrument Corporation | Schottky barrier device with doped composite guard ring |
DE3785127D1 (de) * | 1986-09-30 | 1993-05-06 | Siemens Ag | Verfahren zur herstellung eines pn-uebergangs hoher spannungsfestigkeit. |
DE10159498A1 (de) * | 2001-12-04 | 2003-06-12 | Bosch Gmbh Robert | Halbleiteranordnung mit einem pn-Übergang und Verfahren zur Herstellung einer Halbleiteranordnung |
WO2003061015A1 (de) * | 2002-01-15 | 2003-07-24 | Robert Bosch Gmbh | Halbleiteranordnung mit einem pn-übergang und verfahren zur herstellung einer halbleiteranordnung |
US7498832B2 (en) * | 2007-08-03 | 2009-03-03 | Northrop Grumman Systems Corporation | Arbitrary quantum operations with a common coupled resonator |
WO2009058695A2 (en) * | 2007-10-30 | 2009-05-07 | Northrop Grumman Systems Corporation | Cool impact-ionization transistor and method for making same |
US7969178B2 (en) * | 2008-05-29 | 2011-06-28 | Northrop Grumman Systems Corporation | Method and apparatus for controlling qubits with single flux quantum logic |
US10122350B2 (en) | 2015-11-17 | 2018-11-06 | Northrop Grumman Systems Corporation | Josephson transmission line (JTL) system |
US11211722B2 (en) | 2017-03-09 | 2021-12-28 | Microsoft Technology Licensing, Llc | Superconductor interconnect system |
US10122351B1 (en) | 2017-07-25 | 2018-11-06 | Northrop Grumman Systems Corporation | Superconducting bi-directional current driver |
US10491178B2 (en) | 2017-10-31 | 2019-11-26 | Northrop Grumman Systems Corporation | Parametric amplifier system |
US10122352B1 (en) | 2018-05-07 | 2018-11-06 | Northrop Grumman Systems Corporation | Current driver system |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL251064A (es) * | 1955-11-04 | |||
US3007090A (en) * | 1957-09-04 | 1961-10-31 | Ibm | Back resistance control for junction semiconductor devices |
US3166694A (en) * | 1958-02-14 | 1965-01-19 | Rca Corp | Symmetrical power transistor |
US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
US3183129A (en) * | 1960-10-14 | 1965-05-11 | Fairchild Camera Instr Co | Method of forming a semiconductor |
US3203840A (en) * | 1961-12-14 | 1965-08-31 | Texas Insutruments Inc | Diffusion method |
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
BE636317A (es) * | 1962-08-23 | 1900-01-01 |
-
1964
- 1964-12-28 US US421278A patent/US3341380A/en not_active Expired - Lifetime
-
1965
- 1965-12-28 FR FR43911A patent/FR1461972A/fr not_active Expired
- 1965-12-28 ES ES0321208A patent/ES321208A1/es not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3341380A (en) | 1967-09-12 |
FR1461972A (fr) | 1966-12-09 |
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