ES2134955T3 - Procedimiento para preparar peliculas de carburo de silicio utilizando un unico compuesto organico de silicio. - Google Patents

Procedimiento para preparar peliculas de carburo de silicio utilizando un unico compuesto organico de silicio.

Info

Publication number
ES2134955T3
ES2134955T3 ES94927851T ES94927851T ES2134955T3 ES 2134955 T3 ES2134955 T3 ES 2134955T3 ES 94927851 T ES94927851 T ES 94927851T ES 94927851 T ES94927851 T ES 94927851T ES 2134955 T3 ES2134955 T3 ES 2134955T3
Authority
ES
Spain
Prior art keywords
silicon carbide
procedure
compound
preparing
single organic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES94927851T
Other languages
English (en)
Inventor
Yunsoo Kim
Jin-Hyo Boo
Kyu-Sang Yu
Il Nam Jung
Seung Ho Yeon
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Korea Research Institute of Chemical Technology KRICT
Original Assignee
Korea Research Institute of Chemical Technology KRICT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Korea Research Institute of Chemical Technology KRICT filed Critical Korea Research Institute of Chemical Technology KRICT
Application granted granted Critical
Publication of ES2134955T3 publication Critical patent/ES2134955T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PROCESO PARA LA PREPARACION DE UNA PELICULA DE CARBURO DE {AL}O {BE}-SILICIO AMORFA QUE SE COMPONE DE UNA FASE DE VAPORIZACION DE AL MENOS UN COMPUESTO DE SILALCANO LINEAL QUE TIENE ATOMOS DE SILICIO Y CARBONO ALTERNADOS, UNA FASE DE CARGA DEL VAPOR DEL COMPUESTO DE SILALCANO LINEAL EN UN SISTEMA ASPIRANTE Y UNA FASE DE EXPOSICION DE LA SUPERFICIE DE UN SUBSTRATO AL VAPOR PARA FORMAR UNA PELICULA DE CARBURO DE SILICIO. UTILIZANDO CUALQUIERA DE ESTOS COMPUESTOS FUENTE POR SI SOLO O EN UNA MEZCLA DE DOS O MAS O JUNTO CON UN GAS PORTADOR HIDROGENO O ARGON, SE PUEDE OBTENER UNA PELICULA DE CARBURO DE {AL}- O {BE}-SILICIO SIN UNA CANTIDAD EXCESIVA DE CARBONO O SILICIO, A TEMPERATURAS INFERIORES A LOS 1000 (GRADOS) C.
ES94927851T 1993-10-11 1994-09-27 Procedimiento para preparar peliculas de carburo de silicio utilizando un unico compuesto organico de silicio. Expired - Lifetime ES2134955T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930021027A KR960012710B1 (ko) 1993-10-11 1993-10-11 단일 유기규소 화합물을 이용한 탄화규소 막의 제조

Publications (1)

Publication Number Publication Date
ES2134955T3 true ES2134955T3 (es) 1999-10-16

Family

ID=19365620

Family Applications (1)

Application Number Title Priority Date Filing Date
ES94927851T Expired - Lifetime ES2134955T3 (es) 1993-10-11 1994-09-27 Procedimiento para preparar peliculas de carburo de silicio utilizando un unico compuesto organico de silicio.

Country Status (7)

Country Link
EP (1) EP0723600B1 (es)
JP (1) JPH09503822A (es)
KR (1) KR960012710B1 (es)
AT (1) ATE181968T1 (es)
DE (1) DE69419425T2 (es)
ES (1) ES2134955T3 (es)
WO (1) WO1995010638A1 (es)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1123991A3 (en) 2000-02-08 2002-11-13 Asm Japan K.K. Low dielectric constant materials and processes
US6905981B1 (en) 2000-11-24 2005-06-14 Asm Japan K.K. Low-k dielectric materials and processes
US20060008661A1 (en) * 2003-08-01 2006-01-12 Wijesundara Muthu B Manufacturable low-temperature silicon carbide deposition technology
US20060293478A1 (en) * 2005-06-13 2006-12-28 Rantala Juha T Silane monomers and siloxane polymers for semiconductor optoelectronics
KR20130135261A (ko) 2010-11-03 2013-12-10 어플라이드 머티어리얼스, 인코포레이티드 실리콘 카바이드 및 실리콘 카보나이트라이드 막들을 증착하기 위한 장치 및 방법들
TW201319299A (zh) 2011-09-13 2013-05-16 Applied Materials Inc 用於低溫電漿輔助沉積的活化矽前驅物
WO2013039881A2 (en) * 2011-09-13 2013-03-21 Applied Materials, Inc. Carbosilane precursors for low temperature film deposition
US9701540B2 (en) 2011-10-07 2017-07-11 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Apparatus and method for the condensed phase production of trisilylamine
US9446958B2 (en) 2011-10-07 2016-09-20 L'Air Liquide Societe Anonyme L'Etude Et L'Exploitation Des Procedes Georges Claude Apparatus and method for the condensed phase production of trisilylamine
RU2481654C1 (ru) * 2012-04-11 2013-05-10 Федеральное государственное бюджетное учреждение "Национальный исследовательский центр "Курчатовский институт" Тепловыделяющий элемент для ядерных водо-водяных реакторов и способ его изготовления
US8987494B2 (en) 2012-04-11 2015-03-24 Gelest Technologies, Inc. Low molecular weight carbosilanes, precursors thereof, and methods of preparation
US8859797B1 (en) 2012-04-27 2014-10-14 Air Liquide Electronics U.S. Lp Synthesis methods for carbosilanes
US9073952B1 (en) 2012-04-27 2015-07-07 L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude Synthesis method for carbosilanes
US9243324B2 (en) * 2012-07-30 2016-01-26 Air Products And Chemicals, Inc. Methods of forming non-oxygen containing silicon-based films
US9879340B2 (en) 2014-11-03 2018-01-30 Versum Materials Us, Llc Silicon-based films and methods of forming the same
US11987882B2 (en) 2020-09-30 2024-05-21 Gelest, Inc. Silicon carbide thin films and vapor deposition methods thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL8500645A (nl) * 1985-03-07 1986-10-01 Philips Nv Werkwijze voor het afzetten van een laag, die in hoofdzaak uit siliciumcarbide bestaat op een substraat.
GB8629496D0 (en) * 1986-12-10 1987-01-21 British Petroleum Co Plc Silicon carbide
US4923716A (en) 1988-09-26 1990-05-08 Hughes Aircraft Company Chemical vapor desposition of silicon carbide
US5053255A (en) 1990-07-13 1991-10-01 Olin Corporation Chemical vapor deposition (CVD) process for the thermally depositing silicon carbide films onto a substrate

Also Published As

Publication number Publication date
KR950011327A (ko) 1995-05-15
DE69419425D1 (de) 1999-08-12
ATE181968T1 (de) 1999-07-15
KR960012710B1 (ko) 1996-09-24
DE69419425T2 (de) 1999-10-28
JPH09503822A (ja) 1997-04-15
EP0723600A1 (en) 1996-07-31
EP0723600B1 (en) 1999-07-07
WO1995010638A1 (en) 1995-04-20

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