ES2055503T3 - Diimida de silicio y procedimiento para su fabricacion, y para la fabricacion de nitruro de silicio generado a partir de la misma. - Google Patents

Diimida de silicio y procedimiento para su fabricacion, y para la fabricacion de nitruro de silicio generado a partir de la misma.

Info

Publication number
ES2055503T3
ES2055503T3 ES91115885T ES91115885T ES2055503T3 ES 2055503 T3 ES2055503 T3 ES 2055503T3 ES 91115885 T ES91115885 T ES 91115885T ES 91115885 T ES91115885 T ES 91115885T ES 2055503 T3 ES2055503 T3 ES 2055503T3
Authority
ES
Spain
Prior art keywords
manufacture
silicon
procedure
diimide
silicon nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES91115885T
Other languages
English (en)
Inventor
Ulrich Prof Dr Dr H C Wannagat
Adrian Dr Schervan
Martin Prof Dr Jansen
Hans-Peter Dr Baldus
Aloys Dr Eiling
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Bayer AG
Original Assignee
Bayer AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bayer AG filed Critical Bayer AG
Application granted granted Critical
Publication of ES2055503T3 publication Critical patent/ES2055503T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/068—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/082—Compounds containing nitrogen and non-metals and optionally metals
    • C01B21/087—Compounds containing nitrogen and non-metals and optionally metals containing one or more hydrogen atoms
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2006/00—Physical properties of inorganic compounds
    • C01P2006/12—Surface area

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Products (AREA)

Abstract

LA INVENCION: TRATA DE UN PROCEDIMIENTO PARA LA PRODUCCION DE DIIMIDA DE SILICIO: SE REFIERE A UNA DIIMIDA DE SILICIO MUY ENRIQUECIDA Y DE FORMULA (I) Y DESCRIBE UN NITRURO DE SILICIO.
ES91115885T 1990-10-02 1991-09-19 Diimida de silicio y procedimiento para su fabricacion, y para la fabricacion de nitruro de silicio generado a partir de la misma. Expired - Lifetime ES2055503T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE4031070A DE4031070A1 (de) 1990-10-02 1990-10-02 Siliciumdiimid, verfahren zu dessen herstellung sowie daraus erhaltenes siliciumnitrid

Publications (1)

Publication Number Publication Date
ES2055503T3 true ES2055503T3 (es) 1994-08-16

Family

ID=6415387

Family Applications (1)

Application Number Title Priority Date Filing Date
ES91115885T Expired - Lifetime ES2055503T3 (es) 1990-10-02 1991-09-19 Diimida de silicio y procedimiento para su fabricacion, y para la fabricacion de nitruro de silicio generado a partir de la misma.

Country Status (7)

Country Link
US (1) US5258169A (es)
EP (1) EP0479050B1 (es)
JP (1) JPH04265211A (es)
KR (1) KR920007921A (es)
CA (1) CA2052401A1 (es)
DE (2) DE4031070A1 (es)
ES (1) ES2055503T3 (es)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4200787A1 (de) * 1992-01-15 1993-07-22 Bayer Ag Verfahren zur herstellung von si(pfeil abwaerts)3(pfeil abwaerts)(pfeil hoch)n(pfeil hoch)(pfeil abwaerts)4(pfeil abwaerts), neue ausgangsverbindung hierfuer sowie verfahren zu dessen herstellung
EP0554020B1 (en) * 1992-01-24 1997-04-09 Sumitomo Electric Industries, Limited Silicon nitride powder and method for its manufacture
JP3314554B2 (ja) * 1993-12-10 2002-08-12 宇部興産株式会社 窒化珪素粉末及び窒化珪素含有水系スラリー
DE19651731B4 (de) * 1995-12-12 2012-08-16 Ube Industries, Ltd. Verfahren zur Herstellung einer Stickstoff enthaltenden Silanverbindung
US6264908B1 (en) 1997-12-04 2001-07-24 Thomas C. Maganas Methods and systems for the catalytic formation of silicon nitride using a fluidized bed of silica
JP2003166060A (ja) * 2001-11-30 2003-06-13 L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude Ｃｖｄ法によるシリコン窒化物膜、シリコンオキシ窒化物膜、またはシリコン酸化物膜の製造方法
JP4607637B2 (ja) * 2005-03-28 2011-01-05 東京エレクトロン株式会社 シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
US8318966B2 (en) * 2006-06-23 2012-11-27 Praxair Technology, Inc. Organometallic compounds
DE102008062177A1 (de) 2008-12-13 2010-07-08 Alzchem Trostberg Gmbh Verfahren zur Herstellung von hochreinem Siliciumnitrid
WO2010114141A1 (ja) 2009-03-30 2010-10-07 宇部興産株式会社 含窒素シラン化合物粉末及びその製造方法
CN105377756B (zh) * 2013-07-11 2017-03-15 宇部兴产株式会社 多晶硅锭铸造用铸模的脱模剂用氮化硅粉末及其制造和使用方法
CN115432676B (zh) * 2021-06-04 2024-03-26 中国科学院过程工程研究所 一种多级流化床制备高质量氮化硅粉体的***及方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54145400A (en) * 1978-05-08 1979-11-13 Ube Ind Ltd Production of metal nitride powder
JPS5595605A (en) * 1979-01-10 1980-07-21 Toyo Soda Mfg Co Ltd High purity silicon nitride and production thereof
JPS58213607A (ja) * 1982-06-07 1983-12-12 Shin Etsu Chem Co Ltd シリコンイミドおよび／または窒化けい素の製造方法
US4613490A (en) * 1984-05-08 1986-09-23 Mitsubishi Gas Chemical Company, Inc. Process for preparing silicon nitride, silicon carbide or fine powdery mixture thereof
JPS61174108A (ja) * 1985-01-25 1986-08-05 Toa Nenryo Kogyo Kk シリコンイミド又はポリシラザンの製造方法
JPS61287930A (ja) * 1985-06-17 1986-12-18 Chisso Corp ポリシラザンの製造方法
DE3578581D1 (de) * 1985-12-09 1990-08-09 Toa Nenryo Kogyo Kk Verfahren zur herstellung von siliciumimid und dessen weiterberarbeitung zu siliciumnitrid.
US4686095A (en) * 1985-12-23 1987-08-11 Ford Motor Company Method of making ultrapure silicon nitride precursor
US4795622A (en) * 1986-04-24 1989-01-03 Toa Nenryo Kogyo Kabushiki Kaisha Method for producing silicon-imide
JPS6339885A (ja) * 1986-08-06 1988-02-20 Toa Nenryo Kogyo Kk 窒化ケイ素前駆体および窒化ケイ素粉末の製造方法
JP2632816B2 (ja) * 1986-10-28 1997-07-23 東燃株式会社 窒化ケイ素の製造方法
US4772516A (en) * 1987-11-09 1988-09-20 Mahone Louis G Stable methylpolydisilylazane polymers

Also Published As

Publication number Publication date
US5258169A (en) 1993-11-02
DE4031070A1 (de) 1992-04-09
EP0479050B1 (de) 1994-06-08
CA2052401A1 (en) 1992-04-03
EP0479050A1 (de) 1992-04-08
JPH04265211A (ja) 1992-09-21
DE59101851D1 (de) 1994-07-14
KR920007921A (ko) 1992-05-27

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