EP4137617A4 - Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor - Google Patents

Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor Download PDF

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Publication number
EP4137617A4
EP4137617A4 EP21787666.3A EP21787666A EP4137617A4 EP 4137617 A4 EP4137617 A4 EP 4137617A4 EP 21787666 A EP21787666 A EP 21787666A EP 4137617 A4 EP4137617 A4 EP 4137617A4
Authority
EP
European Patent Office
Prior art keywords
vapor deposition
substrate
single crystal
silicon single
manufacturing methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21787666.3A
Other languages
German (de)
French (fr)
Other versions
EP4137617A1 (en
Inventor
Keitaro TSUCHIYA
Masaru Shinomiya
Weifeng Qu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Handotai Co Ltd
Original Assignee
Shin Etsu Handotai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai Co Ltd filed Critical Shin Etsu Handotai Co Ltd
Publication of EP4137617A1 publication Critical patent/EP4137617A1/en
Publication of EP4137617A4 publication Critical patent/EP4137617A4/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
EP21787666.3A 2020-04-17 2021-03-23 Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor Pending EP4137617A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020073795A JP7173082B2 (en) 2020-04-17 2020-04-17 Silicon single crystal substrate for vapor phase epitaxy, vapor phase epitaxy substrate, and manufacturing method thereof
PCT/JP2021/011845 WO2021210354A1 (en) 2020-04-17 2021-03-23 Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor

Publications (2)

Publication Number Publication Date
EP4137617A1 EP4137617A1 (en) 2023-02-22
EP4137617A4 true EP4137617A4 (en) 2024-06-05

Family

ID=78084253

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21787666.3A Pending EP4137617A4 (en) 2020-04-17 2021-03-23 Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor

Country Status (6)

Country Link
US (1) US20230235481A1 (en)
EP (1) EP4137617A4 (en)
JP (1) JP7173082B2 (en)
CN (1) CN115398042B (en)
TW (1) TW202140843A (en)
WO (1) WO2021210354A1 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240035195A1 (en) * 2022-07-29 2024-02-01 Applied Materials, Inc. Methods, systems, and apparatus for forming layers having single crystalline structures

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010243A1 (en) * 2003-07-29 2005-02-03 Shin-Etsu Handotai Co., Ltd. Process for producing silicon single crystal substrate, method of measuring resistance characteristics and method of warranting resistance characteristics
JP2007176725A (en) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd Method for manufacturing neutron-irradiated silicon single crystal

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4794137B2 (en) * 2004-04-23 2011-10-19 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 Heat treatment method for silicon semiconductor substrate
JP2006186245A (en) * 2004-12-28 2006-07-13 Tokyo Electron Ltd Tunnel oxide film nitriding method, nonvolatile memory element manufacturing method, nonvolatile memory element, computer program, and recording medium
JP5159858B2 (en) 2010-09-08 2013-03-13 コバレントマテリアル株式会社 Gallium nitride compound semiconductor substrate and manufacturing method thereof
JP5817127B2 (en) * 2011-01-21 2015-11-18 株式会社Sumco Semiconductor substrate and manufacturing method thereof
JP6245156B2 (en) 2014-12-02 2017-12-13 信越半導体株式会社 Silicon wafer evaluation method
CN105280491A (en) * 2015-06-17 2016-01-27 上海超硅半导体有限公司 Silicon chip and preparing method
JP6299835B1 (en) * 2016-10-07 2018-03-28 株式会社Sumco Epitaxial silicon wafer and method of manufacturing epitaxial silicon wafer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005010243A1 (en) * 2003-07-29 2005-02-03 Shin-Etsu Handotai Co., Ltd. Process for producing silicon single crystal substrate, method of measuring resistance characteristics and method of warranting resistance characteristics
JP2007176725A (en) * 2005-12-27 2007-07-12 Shin Etsu Handotai Co Ltd Method for manufacturing neutron-irradiated silicon single crystal

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
CHIU HSIEN-CHIN ET AL: "Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis", MICROELECTRONICS RELIABILITY : AN INTERNAT. JOURNAL & WORLD ABSTRACTING SERVICE, vol. 53, no. 12, 18 July 2013 (2013-07-18), pages 1897 - 1900, XP028772500, ISSN: 0026-2714, DOI: 10.1016/J.MICROREL.2013.06.015 *
See also references of WO2021210354A1 *
WWW TOPSIL SEMICONDUCTOR MATERIALS: "HIGH RESISTIVITY, NITROGEN- ENRICHED FZ SI WAFERS FOR PARTICLE DETECTORS", NITROSIL.COM, 1 January 2016 (2016-01-01), XP055524995 *

Also Published As

Publication number Publication date
US20230235481A1 (en) 2023-07-27
TW202140843A (en) 2021-11-01
CN115398042B (en) 2024-05-03
JP2021169397A (en) 2021-10-28
WO2021210354A1 (en) 2021-10-21
JP7173082B2 (en) 2022-11-16
EP4137617A1 (en) 2023-02-22
CN115398042A (en) 2022-11-25

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