EP4137617A4 - Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor - Google Patents
Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor Download PDFInfo
- Publication number
- EP4137617A4 EP4137617A4 EP21787666.3A EP21787666A EP4137617A4 EP 4137617 A4 EP4137617 A4 EP 4137617A4 EP 21787666 A EP21787666 A EP 21787666A EP 4137617 A4 EP4137617 A4 EP 4137617A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- vapor deposition
- substrate
- single crystal
- silicon single
- manufacturing methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title 2
- 238000007740 vapor deposition Methods 0.000 title 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
- 239000013078 crystal Substances 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910052710 silicon Inorganic materials 0.000 title 1
- 239000010703 silicon Substances 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C23C16/303—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Mechanical Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020073795A JP7173082B2 (en) | 2020-04-17 | 2020-04-17 | Silicon single crystal substrate for vapor phase epitaxy, vapor phase epitaxy substrate, and manufacturing method thereof |
PCT/JP2021/011845 WO2021210354A1 (en) | 2020-04-17 | 2021-03-23 | Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor |
Publications (2)
Publication Number | Publication Date |
---|---|
EP4137617A1 EP4137617A1 (en) | 2023-02-22 |
EP4137617A4 true EP4137617A4 (en) | 2024-06-05 |
Family
ID=78084253
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP21787666.3A Pending EP4137617A4 (en) | 2020-04-17 | 2021-03-23 | Silicon single crystal substrate for vapor deposition, vapor deposition substrate, and manufacturing methods therefor |
Country Status (6)
Country | Link |
---|---|
US (1) | US20230235481A1 (en) |
EP (1) | EP4137617A4 (en) |
JP (1) | JP7173082B2 (en) |
CN (1) | CN115398042B (en) |
TW (1) | TW202140843A (en) |
WO (1) | WO2021210354A1 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20240035195A1 (en) * | 2022-07-29 | 2024-02-01 | Applied Materials, Inc. | Methods, systems, and apparatus for forming layers having single crystalline structures |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005010243A1 (en) * | 2003-07-29 | 2005-02-03 | Shin-Etsu Handotai Co., Ltd. | Process for producing silicon single crystal substrate, method of measuring resistance characteristics and method of warranting resistance characteristics |
JP2007176725A (en) * | 2005-12-27 | 2007-07-12 | Shin Etsu Handotai Co Ltd | Method for manufacturing neutron-irradiated silicon single crystal |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4794137B2 (en) * | 2004-04-23 | 2011-10-19 | Sumco Techxiv株式会社 | Heat treatment method for silicon semiconductor substrate |
JP2006186245A (en) * | 2004-12-28 | 2006-07-13 | Tokyo Electron Ltd | Tunnel oxide film nitriding method, nonvolatile memory element manufacturing method, nonvolatile memory element, computer program, and recording medium |
JP5159858B2 (en) | 2010-09-08 | 2013-03-13 | コバレントマテリアル株式会社 | Gallium nitride compound semiconductor substrate and manufacturing method thereof |
JP5817127B2 (en) * | 2011-01-21 | 2015-11-18 | 株式会社Sumco | Semiconductor substrate and manufacturing method thereof |
JP6245156B2 (en) | 2014-12-02 | 2017-12-13 | 信越半導体株式会社 | Silicon wafer evaluation method |
CN105280491A (en) * | 2015-06-17 | 2016-01-27 | 上海超硅半导体有限公司 | Silicon chip and preparing method |
JP6299835B1 (en) * | 2016-10-07 | 2018-03-28 | 株式会社Sumco | Epitaxial silicon wafer and method of manufacturing epitaxial silicon wafer |
-
2020
- 2020-04-17 JP JP2020073795A patent/JP7173082B2/en active Active
-
2021
- 2021-03-23 US US17/918,713 patent/US20230235481A1/en active Pending
- 2021-03-23 EP EP21787666.3A patent/EP4137617A4/en active Pending
- 2021-03-23 CN CN202180028335.2A patent/CN115398042B/en active Active
- 2021-03-23 WO PCT/JP2021/011845 patent/WO2021210354A1/en unknown
- 2021-03-30 TW TW110111444A patent/TW202140843A/en unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2005010243A1 (en) * | 2003-07-29 | 2005-02-03 | Shin-Etsu Handotai Co., Ltd. | Process for producing silicon single crystal substrate, method of measuring resistance characteristics and method of warranting resistance characteristics |
JP2007176725A (en) * | 2005-12-27 | 2007-07-12 | Shin Etsu Handotai Co Ltd | Method for manufacturing neutron-irradiated silicon single crystal |
Non-Patent Citations (3)
Title |
---|
CHIU HSIEN-CHIN ET AL: "Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis", MICROELECTRONICS RELIABILITY : AN INTERNAT. JOURNAL & WORLD ABSTRACTING SERVICE, vol. 53, no. 12, 18 July 2013 (2013-07-18), pages 1897 - 1900, XP028772500, ISSN: 0026-2714, DOI: 10.1016/J.MICROREL.2013.06.015 * |
See also references of WO2021210354A1 * |
WWW TOPSIL SEMICONDUCTOR MATERIALS: "HIGH RESISTIVITY, NITROGEN- ENRICHED FZ SI WAFERS FOR PARTICLE DETECTORS", NITROSIL.COM, 1 January 2016 (2016-01-01), XP055524995 * |
Also Published As
Publication number | Publication date |
---|---|
US20230235481A1 (en) | 2023-07-27 |
TW202140843A (en) | 2021-11-01 |
CN115398042B (en) | 2024-05-03 |
JP2021169397A (en) | 2021-10-28 |
WO2021210354A1 (en) | 2021-10-21 |
JP7173082B2 (en) | 2022-11-16 |
EP4137617A1 (en) | 2023-02-22 |
CN115398042A (en) | 2022-11-25 |
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Legal Events
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
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PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
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STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
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17P | Request for examination filed |
Effective date: 20221013 |
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AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
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DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20240503 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: C30B 29/40 20060101ALI20240427BHEP Ipc: C30B 33/02 20060101ALI20240427BHEP Ipc: C30B 25/18 20060101ALI20240427BHEP Ipc: C30B 13/00 20060101ALI20240427BHEP Ipc: C23C 16/30 20060101ALI20240427BHEP Ipc: C30B 29/06 20060101AFI20240427BHEP |