EP3918631A1 - Dispositif et procédé de traitement de plaquettes - Google Patents

Dispositif et procédé de traitement de plaquettes

Info

Publication number
EP3918631A1
EP3918631A1 EP20703704.5A EP20703704A EP3918631A1 EP 3918631 A1 EP3918631 A1 EP 3918631A1 EP 20703704 A EP20703704 A EP 20703704A EP 3918631 A1 EP3918631 A1 EP 3918631A1
Authority
EP
European Patent Office
Prior art keywords
wafers
basin
vertically aligned
slots
hold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP20703704.5A
Other languages
German (de)
English (en)
Inventor
Martin Zimmer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
Publication of EP3918631A1 publication Critical patent/EP3918631A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1876—Particular processes or apparatus for batch treatment of the devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to an apparatus and a method for processing wafers. It is proposed to transport the wafers in a vertical orientation through the process solution used for processing the wafers, which enables an increase in throughput, a simplified aftertreatment of the exhaust air and a reduction in the consumption of components of the process solution.
  • the invention can be used, inter alia, in the production of solar cells or also printed circuit boards, for example printed circuit boards for the electrical industry.
  • the production of solar cells from multicrystalline silicon solar cells is known and contains a wet chemical texture process. This is usually carried out in continuous systems (inline etching systems) as shown in FIG. 1.
  • the wafers (1) are transported horizontally on transport rollers (2) through the system.
  • Hold-down rollers (3) ensure that the wafers do not lose contact with the transport rollers.
  • the process solution can be located in a process basin (4).
  • Overflowing medium is piped back into a tank (5) and pumped from there back into the process tank by means of a pump (6).
  • the level of the process solution in the area of the transport rollers is accumulated by the first and last pair of transport and hold-down rollers, so that the wafers are completely immersed in the process solution.
  • the gap between the transport and hold-down rolls corresponds to the thickness of the wafers (usually around 200 pm) and is therefore negligible.
  • a solution of hydrofluoric acid (HF) and nitric acid (HNO 3 ) is used for the texturing. This reacts with silicon in a highly exothermic reaction to form hexafluorosilicic acid (H 2 S1F 6 ) and nitrogen monoxide (NO), which continues to react in contact with atmospheric oxygen to form nitrogen dioxide (NO 2 ).
  • the wafers Since the wafers are guided horizontally through the system in this process, the wafers require the maximum area, which limits the number of wafers processed simultaneously and thus the throughput of the systems.
  • An increase in throughput can thus only be achieved by reducing the process time or increasing the size of the system in combination with increasing the throughput speed. Since the process time is already very low at 60 to 90 seconds, a further reduction while maintaining a robust process is hardly possible.
  • the increase in throughput speed with the simultaneous enlargement of the system is only of little profit from an economic point of view, since the Material requirements and thus the investment costs for the construction of a larger plant also increase.
  • an inline process When processing wafers, a basic distinction can be made between an inline process and a batch process.
  • the wafers are transported in series through the system. Several rows of wafers can also be transported side by side at the same time (multi-track inline process).
  • the wafers are not transported individually lying on a conveyor belt or the like, but with the aid of a carrier (English: Carrier) in which a large number of wafers are stacked.
  • a carrier English: Carrier
  • DE 10 2006 054 846 A1 proposes a device in which wafers are introduced into a batch transport device within an inline system in order to then be transported as a batch through the system. Then several such batches are stacked and passed through the system and separated again at the end of the system, the transport in batch mode also being able to take place in such a way that the wafers are aligned vertically during the transport.
  • a mechanically and logistically demanding merging and separation is necessary to combine inline processes and batch processes.
  • the transport of vertically aligned wafers in the inline process is not intended.
  • the object is solved by the subject matter of the claims.
  • the object is achieved in particular by a device for processing wafers with a chemical process solution, the device comprising transport means (2) and hold-down means (3) and at least one process basin (4) for receiving the chemical process solution, the process basin ( 4) is delimited on at least one side by a damming device (21), characterized in that the damming device (21) is designed in such a way that between the transport means (2) and the holding-down means (3) vertically oriented wafers in the horizontal direction of movement in the Process basin (4) in and out of the process basin (4) can be performed.
  • a device of the invention according to exemplary embodiments is shown in FIGS. 2 and 5.
  • the terms “vertikah” and “horizontah” are used in the present description, this means “essentially vertical” or “essentially horizontal”, unless stated otherwise.
  • the surface of the process solution located in the process tank (4) can preferably serve as a reference point. This surface is aligned horizontally in the absence of wave movements or other movements of the process solution. A surface vector standing vertically on the surface of the process solution is therefore vertical.
  • the expression “essentially horizontal” therefore preferably describes an orientation or movement that is essentially parallel to the surface of the process solution located in the process basin (4), while the expression “essentially vertical” describes an orientation or movement that is essentially orthogonal to the surface of the process solution in the process pool (4).
  • a surface vector standing vertically on a substantially horizontally oriented surface preferably forms an angle of at most 20 °, more preferably at most 10 °, more preferably at most 5 °, more preferably at most 1 °, with a surface vector standing vertically on the surface of the process solution. more preferably about 0 °.
  • the vector of an essentially horizontal direction of movement preferably forms an angle of at least 70 ° and at most 110 °, more preferably of at least 80 ° and at most 100 °, more preferably of at least 85 ° and at most 95, with a surface vector standing perpendicularly on the surface of the process solution °, more preferably from about 90 °.
  • a surface vector standing vertically on a substantially vertically oriented surface preferably forms an angle of at least 70 ° and at most 110 °, more preferably of at least 80 ° and at most 100 °, more preferably of at least, with a surface vector standing vertically on the surface of the process solution 85 ° and at most 95 °, more preferably of about 90 °.
  • the vector of an essentially vertical direction of movement with an area vector perpendicular to the surface of the process solution preferably forms an angle of at most 20 °, more preferably at most 10 °, more preferably at most 5 °, more preferably at most 1 °, more preferably about 0 ° .
  • the device of the present invention is a device for processing wafers with a chemical process solution.
  • Silicon wafers in particular multicrystalline or monocrystalline silicon wafers, are preferably to be subjected to a texturing process with the aid of the device according to the invention.
  • the processing of the wafers is therefore preferably texturing.
  • Such texturing of wafers is known and is used above all in the production of solar cells.
  • the process solution used for multicrystalline wafers preferably contains hydrofluoric acid (HF) and nitric acid (HNO3), and that for monocrystalline wafers contains a mixture of aqueous potassium hydroxide solution (KOH) and one or more organic additives.
  • the device of the present invention comprises a process basin (4) for receiving the chemical process solution.
  • the device can also comprise several process basins (4), for example for the parallel processing of several wafers or for the sequential processing of a wafer with different process solutions. Several wafers can also be processed simultaneously and / or in succession in the same process
  • process basins (4) with a rectangular base are used.
  • the width of the process tank (4) depends primarily on the number of wafers to be processed in parallel and on their thickness and distance from one another.
  • the width of the process tank (4) is preferably in a range from 100 mm to 1000 mm, more preferably from 200 mm to 800 mm, more preferably from 500 mm to 700 mm.
  • the length of the process basin (4) depends primarily on the desired process time that the wafers are to spend in the process basin (4), the transport speed of the wafers through the process basin (4) being taken into account.
  • the length of the process tank (4) is preferably in a range from 100 mm to 5000 mm, more preferably from 300 mm to 4000 mm, more preferably from 800 mm to 3000 mm.
  • the height of the process tank (4) is essentially determined by the dimensions of the wafers to be processed, that is to say on the basis of the vertical alignment according to their length or width.
  • the process basin (4) preferably has a height that enables the process solution to be built up to a height that exceeds the height of the wafers, so that the wafers in the process basin (4) are completely immersed in the process solution.
  • the height of the process basin (4) is preferably in a range from 20 mm to 2000 mm, more preferably from 50 mm to 1000 mm, more preferably from 100 mm to 500 mm, more preferably from 150 mm to 300 mm, more preferably from 160 mm to 250 mm, more preferably from 180 mm to 220 mm.
  • the device of the present invention comprises transport means (2) and hold-down means
  • the transport means (2) serve to transport the wafers through the device.
  • the hold-down means (3) ensure that the wafers do not lose contact with the transport means (2).
  • Transport means (2) and hold-down means (3) are arranged such that the wafers between the transport means (2) and the hold-down means (3) aligned vertically and can be guided through the device in a horizontal direction of movement, in particular into the process basin (4), through the process basin (4), and out of the process basin
  • the distance between the transport means (2) and the hold-down means (3) preferably corresponds essentially to the length or width of the wafers and not, as in the prior art, to the thickness of the wafers.
  • the distance between the transport means (2) and the hold-down means (3) is determined by the vertical alignment of the wafers between the transport means (2) and the hold-down means (3) determined.
  • the length of the wafers corresponds to the width of the wafers.
  • the wafers usually have a square base.
  • the clear distance is preferably between the transport means (2) and the hold-down means
  • the transport means (2) and the hold-down means (3) are preferably aligned essentially parallel to one another within the device. This is also advantageous for the vertical alignment of the wafers between the transport means (2) and the hold-down means (3).
  • the transport means (2) and / or the hold-down means (3) can be configured, for example, in the form of conveyor belts.
  • Such embodiments of the invention are possible, but less advantageous, since such conveyor belts have to be guided together with the wafers through the device, in particular also into the process basin (4), through the process basin (4), and out of the process basin (4 ) out.
  • the transport means (2) are therefore particularly preferably transport rollers (2) and the hold-down means (3) are hold-down rollers (3).
  • the configuration in the form of rollers has the advantage that the wafer can be transported through the device, in particular also into the process basin (4), through the process basin (4) and out of the process basin (4) without the transport means (2) and the hold-down means (3) themselves also having to be led into the process basin (4), through the process basin (4) and out of the process basin (4).
  • the transport rollers (2) and the hold-down rollers (3) are preferably stationary.
  • the rollers therefore preferably only perform a rotational movement during the transport of the wafers, but no translational movement.
  • the rollers therefore preferably do not move through the device together with the wafers, but remain in place.
  • transport rollers (2) and hold-down rollers (3) are preferably provided inside and outside the process basin, each of which remains in place.
  • the transport means (2) and / or the hold-down means (3) preferably have at least one depression, preferably exactly one depression per wafer, for receiving the wafers. This is advantageous in order to protect the wafers against lateral tilting.
  • FIG. 1 An exemplary embodiment with wafers (1) located between transport rollers (2) and hold-down rollers (3) is shown in FIG.
  • the device of the present invention comprises at least one process basin (4) for receiving the chemical process solution, the process basin (4) being delimited on at least one side by a stowage device (21).
  • the processing of the wafers with the chemical process solution takes place by leading the wafers through the process basin (4) with the process solution contained therein.
  • the storage device (21) is designed in such a way that between the transport means (2) and the holding-down means (3) vertically aligned wafers in and out of the process basin (4) in the horizontal direction of movement Process basin (4) can be executed.
  • the stowage device (21) can differ from the other boundary walls of the process basin (4), for example, in that the stowage device (21) is arranged such that the stowage device (21) can assume an open position and a closed position, the open position allows the insertion of the vertically aligned wafers into the process pool (4) and / or the execution of the vertically aligned wafers from the process pool (4). It is also possible, for example, to provide the storage device (21) with at least one vertically extending slot (22) for carrying out the vertically aligned wafers.
  • the stowage device (21) can be configured with respect to the other configuration analogous to the other boundary walls of the process basin (4).
  • the stowage device (21) works particularly efficiently when the slots (22) are as narrow as possible and / or the stowage device (21) is as thick as possible, since this increases the hydraulic resistance of the slots (22).
  • the thickness of the accumulation device (21) is preferably at least 10% of the wafer length, more preferably at least 15% of the wafer length, more preferably at least 20% of the wafer length, but preferably at most 50% of the wafer length, more preferably at most 40% of the wafer length, more preferably at most 30% of the wafer length.
  • the thickness of the storage device (21) is preferably in a range from 15 mm to 80 mm, more preferably from 20 mm to 60 mm, more preferably from 30 mm to 50 mm.
  • the width of the slot (22) is preferably at most 5 times, more preferably at most 3 times the wafer thickness, but preferably at least 1.1 times, more preferably at least 1.5 times the wafer thickness.
  • the width of the slot (22) is preferably in a range from 220 pm to 1000 pm, more preferably from 300 pm to 600 pm.
  • the slots (22) are preferably chamfered on the input side, that is to say that the edge between the front front and a slot (22) is preferably provided with a chamfer. This enables the wafers to be inserted particularly reliably even with tolerances in the transport system.
  • the width of the slots (22) preferably tapers in the direction of passage. This contributes to an even better guidance of the wafers through the slots (22).
  • the aforementioned width of the slots (22) denotes the width of the slots (22) at the narrowest point.
  • the ratio of the slot width at the widest test point to the slot width at the narrowest point is preferably in a range from 1.1: 1 to 2: 1, more preferably from 1.2: 1 to 1.5: 1.
  • the hold-down means (3) in front of the storage device (21) are designed with an additional weight in order to ensure particularly good guidance against the outflowing liquid.
  • the device of the present invention is suitable for carrying out inline processes, as can already be seen from the alignment of the wafers between transport means (2) and hold-down means (3) and the transport of the wafers through the device which is guaranteed thereby.
  • inline process the wafers are transported individually in a row through the system. Several rows of wafers can also be transported side by side at the same time (multi-track inline process).
  • the process tank (4) can easily be limited by the transport rollers (2) and the hold-down rollers (3), since the wafers are transported there in a horizontal orientation, so that the distance between the transport rollers (2) and the hold-down rollers (3) corresponds essentially to the thickness of the wafer. Because the thickness of the wafer is very small is (usually around 200 pm), the gap between the transport rollers (2) and the hold-down rollers (3) does not lead to a significant leakage of the process liquid from the process tank (4).
  • the present device provides for the inline transport of vertically aligned wafers into the process basin (4), through the process basin (4), and out of the process basin (4).
  • the distance between the transport means (2) and the hold-down means (3) does not correspond to the thickness of the wafers due to the vertical alignment of the wafers, as in the prior art, but rather to the length or width of the wafers, with the length and width of the wafers taking into account the usually square base area of the wafers are usually identical.
  • the length and width of the wafers exceed their thickness many times, usually at least 100 times.
  • the distance between the transport means (2) and the hold-down means (3) is therefore so large that the process basin (4) cannot be limited by the transport means (2) and the hold-down means (3), since the process solution is caused by the gap between Transport means (2) and hold-down means (3) would emerge, so that the process solution would not remain in the process basin (4) in sufficient quantity for the processing of the wafers.
  • Delimiting the process basin (4) on all sides by means of customary boundary walls is not a satisfactory solution for a device which is said to be suitable for carrying out an inline method. This would prevent the vertically aligned wafers from being able to be moved into and out of the process basin (4) in the process basin (4) in the horizontal direction of movement. Rather, the wafers would have to be lifted vertically, guided over the boundary wall and then lowered vertically into the process basin (4), which is not compatible with an inline process.
  • the process basin (4) of the device of the present invention is therefore delimited on at least one side by a stowage device (21) which is designed such that between the transport means (2) and the holding-down means (3) vertically oriented wafers in the horizontal direction of movement in the process basin (4) can be guided in and out of the process basin (4).
  • a stowage device (21) which is designed such that between the transport means (2) and the holding-down means (3) vertically oriented wafers in the horizontal direction of movement in the process basin (4) can be guided in and out of the process basin (4).
  • One or more of the remaining sides of the process basin (4) can also be delimited by such a stowage device (21). However, this is not necessary in order to carry out an inline process with the device. It is sufficient if the process basin (4) is delimited on at least one side by such a storage device (21). In such an embodiment, the wafers are carried out on the same side from the process tank (4) on which they were also introduced into the process tank (4).
  • Embodiments with the described stowing device (21) on only one side of the process tank require more complex transport guidance of the wafers within the process tank (4), since the wafers leave the process tank (4) on the same side on which they enter the process tank (4 ) have occurred.
  • the device of the invention therefore preferably comprises two stowage devices (21a, 21b) located on opposite sides of the process basin (4). This enables linear transport of the wafers into the process basin (4), through the process basin (4), and out of the process basin (4), since the wafers enter the process basin (4) on one side and on the opposite side the process basin (4) can exit the process basin (4). A change in the direction of movement of the wafers is not necessary in such embodiments.
  • the material of the storage device (21) depends on the particular application, in particular on the process temperature and / or the components of the chemical etching solutions.
  • the stowage device (21) of the present invention is designed in such a way that between the transport means (2) and the holding-down means (3), vertically aligned wafers can be introduced into and out of the process basin (4) in the horizontal direction of movement.
  • the storage device (21) is arranged such that the storage device (21) can assume an open position and a closed position, the open position being the insertion of the vertically aligned wafers into the process basin (4) and / or that Execution of the vertically aligned wafers from the process pool (4) allowed.
  • the jamming device (21) can be designed such that it can be lowered down into the open position or lifted up or pulled away into the open position in order to insert the vertically aligned wafers into the process (4) and / or To allow execution of the vertically aligned wafers from the process pool (4).
  • Such an embodiment of the invention is possible, but has certain disadvantages.
  • the chemical process solution will emerge from the process tank (4) to a considerable extent if the storage device (21) is in the open and not in the closed position.
  • the device of the present invention can therefore not be operated in continuous operation with such a stowage device (21). Rather, the accumulation device (21) after the wafers have been introduced into the Process basin (4) are brought from the open position into the closed position so that process liquid introduced into the process basin (4) exits the process basin (4) through the opening of the process basin (4), which results from the fact that the jam device (21) is in the open position. This requires stopping the transportation of the wafers through the system.
  • the jam device (21) Only when the storage device (21) has assumed the closed position is the process solution placed in the now closed process basin (4). In order to enable the wafers to be carried out from the process tank (4), the jam device (21) must then be brought into the open position again. Before, the process liquid or at least a large part of it is preferably removed again from the process basin (4) in order to avoid an uncontrolled escape of the process liquid from the process basin (4) when the storage device (21) is in the open position.
  • the damming device (21) can also be designed such that a weir area via two weirs 21a and 21b, and a weir area through two weirs 21c and 21d is formed.
  • a possible embodiment is shown by way of example in FIG. 6.
  • the weirs 21a, 21b, 21c and 21d are each shown retractable there.
  • the weirs can be lifted up or pulled away to the open position. Due to the fact that two weirs each form a sluice area or a sluice area, excessive leakage of process liquid from the process tank (4) can be avoided.
  • a similar principle is known, for example, for locks in inland navigation.
  • the wafers In this operating mode, the wafers have to be divided into wafer groups, since the wafers are introduced into and out of the process basin (4) in groups.
  • the distance between two successive wafer groups will generally be at least one wafer length, so that there is an increased space requirement.
  • multi-lane inline processes in which several wafer groups are parallel to the process basin (4) in and out of the process basin (4), it must also be ensured that the individual wafers are actually parallel to each other, since otherwise there would be undesired interaction of wafers moving out of line with the accumulation device (21) when the accumulation device (21) is moved from the open to the closed position, which can result in damage to the corresponding wafers and / or the accumulation device (21).
  • the accumulation device (21) is preferably provided with at least one vertically extending slot (22) for carrying out the vertically aligned wafers.
  • the accumulation device (21) is provided with exactly one vertically running slot (22) for the passage of the vertically aligned wafers.
  • the accumulation device (21) can be provided with more than one vertical slot (22) for the passage of the vertically aligned wafers.
  • the number of slots (22) should correspond to the number of rows of wafers processed in parallel.
  • the accumulation device (21) is provided with 2 to 1000, more preferably 5 to 500, more preferably 10 to 200, more preferably 20 to 100, more preferably 30 to 50 vertically extending slots (22) for the passage of the vertically aligned wafers .
  • An exemplary embodiment of a stowing device (21) with slots (22) is shown in FIG. 3.
  • the spacing of the slots (22) from one another is determined by the spacing of the rows of wafers processed in parallel.
  • the distance between the slots (22) is preferably 2 times to 100 times, more preferably 5 times to 50 times, more preferably 10 times to 30 times, more preferably 20 times to 25 times Times the width of the slots (22).
  • the spacing of the slots (22) from one another is preferably 0.4 mm to 40 mm, more preferably from 1 mm to 10 mm, more preferably from 2 mm to 6 mm, more preferably from 4 mm to 5 mm, more preferably from 4, 5 mm to 4.9 mm, more preferably from 4.7 mm to 4.8 mm.
  • the slots (22) can be introduced into the storage device (21) in various ways.
  • the slots (22) are preferably milled into the stowage device (21).
  • the stowage device (21) is already produced with slots (22), in particular by means of additive manufacturing, for example 3D printing.
  • the dimensions of the slots (22) preferably correspond essentially to the dimensions of the wafers in the frontal view of the vertical alignment. This enables the vertically aligned wafers to be passed through the slots (22) in the horizontal direction of movement without the slots (22) having unnecessarily large dimensions, which could be associated with an increased and undesired escape of process solution from the process tank (4).
  • the slots (22) preferably have a height in a range from 10 mm to 1000 mm, more preferably from 20 mm to 500 mm, more preferably from 50 mm to 300 mm, more preferably from 100 mm to 200 mm, further preferably from 150 mm to 170 mm, more preferably from 156 mm to 168 mm, more preferably from 160 mm to 165 mm.
  • the height of the slots (22) preferably corresponds essentially to the distance between the transport means (2) and the hold-down means (3).
  • the width of the slot (22) is preferably at most 5 times, more preferably at most 3 times the wafer thickness, but preferably at least 1.1 times, more preferably at least 1.5 times the wafer thickness.
  • the width of the slot (22) is preferably in a range from 220 pm to 1000 pm, more preferably from 300 pm to 600 pm.
  • the depth of the slots (22) is determined by the depth of the storage device (21).
  • the depth of the slots (22) is preferably at least 10% of the wafer length, more preferably at least 15% of the wafer length, more preferably at least 20% of the wafer length, but preferably at most 50% of the wafer length, more preferably at most 40% of the wafer length preferably at most 30% of the wafer length.
  • the depth of the slots (22) is preferably in a range from 15 mm to 80 mm, more preferably from 20 mm to 60 mm, more preferably from 30 mm to 50 mm.
  • the device according to the invention can thus several rows of wafers (1), in particular special 2 to 1000 rows of wafers (1), for example 5 to 500 rows of wafers (1), 10 to 200 rows of wafers (1), 20 to 100 Rows of wafers (1), or 30 to 50 rows of wafers (1) are transported simultaneously side by side through the same process tank (4).
  • the distance between two rows of wafers (1) which are simultaneously transported side by side through the process basin (4) is from 0.4 mm to 40 mm, more preferably from 1 mm to 10 mm, more preferably from 2 mm to 6 mm, more preferably from 4 mm to 5 mm, more preferably from 4.5 mm to 4.9 mm, more preferably from 4.7 mm to 4.8 mm.
  • the device preferably has a tank (5) which is connected to the process tank (4) in such a way that chemical process solution can be transferred from the tank (5) into the process tank (4).
  • the device preferably has a pump (6) for transferring the chemical process solution from the tank (5) into the process basin (4).
  • the device preferably has at least one collecting basin for receiving process solution emerging from the process basin (4).
  • the collecting basin is preferably connected to the tank (5) in such a way that process solution taken up in the collecting basin can be returned to the tank (5). This ensures that process solution emerging from the process basin (4) is not lost, but can be used again for processing the wafers.
  • the present invention also relates to an inline method for processing wafers with a chemical process solution, comprising the following steps: a) providing vertically aligned wafers, b) providing a process tank (4) with a process solution therein, c) introducing the vertically aligned wafers into the process tank (4), d) passing the vertically aligned wafers through the process tank (4) and the process solution therein, so that the wafers be brought into contact with the process solution, e) executing the vertically aligned wafers from the process basin (4), the insertion, passage and execution according to steps c) to e) taking place in an essentially horizontal direction of movement.
  • the method is preferably carried out with a device of the present invention.
  • the method of the present invention is an inline method.
  • the wafers are transported in series through the system.
  • Several rows of wafers can also be transported side by side at the same time (multi-track inline process).
  • a plurality of rows of wafers (1) in particular 2 to 1000 rows of wafers (1), for example 5 to 500 rows of wafers (1), 10 to 200 rows of wafers (1), 20 to 100 rows of wafers (1 ), or 30 to 50 rows of wafers (1) are transported simultaneously side by side through the same process tank (4).
  • the distance between two rows of wafers (1) which are simultaneously transported side by side through the process basin (4) is from 0.4 mm to 40 mm, more preferably from 1 mm to 10 mm, more preferably from 2 mm to 6 mm, more preferably from 4 mm to 5 mm, more preferably from 4.5 mm to 4.9 mm, more preferably from 4.7 mm to 4.8 mm.
  • the method of the invention is a method for processing wafers with a chemical process solution.
  • Preferred wafers are silicon wafers, in particular multicrystalline silicon wafers.
  • the processing of the wafers is preferably texturing. Such texturing of wafers is known and is used above all in the production of solar cells.
  • the process solution used preferably contains hydrofluoric acid (HF) and nitric acid (HNO3).
  • step a) of the method according to the invention vertically aligned wafers are provided.
  • the length and width of the wafers exceed their thickness many times, as a rule 100 times to 1000 times.
  • a substantially vertical alignment of the wafers corresponds to an orientation in which the two main surfaces of a wafer are arranged in such a way that surface vectors that are perpendicular to the main surfaces are oriented essentially horizontally.
  • the surface vectors of the two main surfaces preferably form an angle of at least 70 ° and at most 110 °, more preferably of at least 80 ° and at most 100 °, with the vector of the horizontal direction of movement of the wafers in accordance with the movement of steps c) to e) of the method. more preferably of at least 85 ° and at most 95 °, further preferably of about 90 °.
  • a process basin (4) with process solution therein is provided.
  • the process solution preferably contains hydrofluoric acid (HF) and nitric acid (HNO 3 ) in the case of texturing multicrystalline wafers or a mixture of potassium hydroxide solution (KOH) and one or more organic additives in the case of texturing monocrystalline wafers.
  • the wafers are processed with the chemical process solution by passing the wafers through the process basin (4) so that the wafers are brought into contact with the process solution located in the process basin (4).
  • the period between the introduction of the wafers into the process basin (4) and the execution of the wafers from the process basin (4) is 15 to 180 seconds for multicrystalline wafers, more preferably 30 to 120 seconds, more preferably 60 to 90 seconds, for monocrystalline wafers preferably 0.5 to 15 minutes, more preferably 1 to 10 minutes, more preferably 2 to 6 minutes.
  • the vertically aligned wafers according to steps c) to e) of the method according to the invention are introduced, passed through and executed in an essentially horizontal direction of movement. This means that the wafers are guided in such a way that the distance of the center of gravity of the individual wafers from the surface of the process solution remains essentially unchanged during steps c) to e).
  • the difference between the greatest distance and the smallest distance of the center of gravity of the individual wafers from the surface of the process solution during steps c) to e) is at most 20%, more preferably at most 10%, more preferably at most 5%, more preferably at most 2 %, more preferably at most 1% of the length of the corresponding wafers.
  • the speed of movement of the wafers during steps c) to e) of the method is preferably in a range from 0.5 m / min to 10 m / min, more preferably from 1 m / min to 6 m / min.
  • the present invention also relates to the use of the device and / or the method of the invention for the production of solar cells and / or printed circuit boards.
  • Figure 1 shows a cross section through a device from the prior art.
  • the wafers (1) are transported in a horizontal orientation through the device.
  • the process tank (4) is limited by the transport rollers (2) and the hold-down rollers (3).
  • Overflowing medium is returned to a tank (5) through a pipeline and pumped from there back into the process tank (4) by means of a pump (6).
  • the arrows indicate the direction of flow of the medium.
  • FIG. 2 shows a cross section through a device of the present invention.
  • the wafers (1) are transported in a vertical orientation through the device.
  • the device comprises a process basin (4) for receiving the chemical process solution.
  • the process basin (4) is delimited on two sides by a storage device (21).
  • Overflowing medium is returned to a tank (5) through a pipeline and pumped from there back into the process tank (4) by means of a pump (6).
  • the arrows indicate the direction of flow of the medium.
  • the processing of the wafers (1) with the chemical process solution takes place in that the wafers (1) are guided through the process basin (4) with the process solution located therein.
  • the storage device (21) is designed in such a way that between the transport means (2) and the holding-down means (3), vertically aligned wafers (1) can be introduced into and out of the process basin (4) in the horizontal direction of movement.
  • FIG. 3 shows a front view of a storage device (21) with slots (22) as a passage for the wafers transported in a vertical orientation.
  • Figure 4 shows a front view of the transport rollers (2) and the hold-down rollers (3) with in between vertically aligned wafers (1).
  • Figure 5 shows a perspective view of a device of the present invention.
  • the accumulation device (21) is designed in such a way that wafers (1) which are vertically aligned between the transport means (2) and the holding-down means can be introduced into and out of the process basin (4) in the horizontal direction of movement.
  • the Nie derhalter holders are not shown for reasons of clarity.
  • FIG. 6 shows a cross section through a device of the present invention with wafers (1) transported in vertical alignment through the device.
  • the storage device (21) is designed such that between the transport means (2) and the hold-down means (3) Tically aligned wafers (1) in the horizontal direction of movement in the process basin (4) in and out of the process basin (4) can be executed.
  • An embodiment is shown in which the stowage device (21) is designed such that an infeed area is formed over two weirs 21a and 21b and an outfeed area is formed over two weirs 21c and 21d.
  • the weirs 21a, 21b, 21c and 21d are each retractable.
  • the weirs 21a and 21c are first lowered for the entry and exit, so that wafers can enter the entry and exit area (FIG. 6A).
  • the weirs 21a and 21c are then transferred to the closed position, so that the arrangement shown in FIG. 6B results.
  • the wafer (1) to be introduced is transported into the process area, while the wafer () to be removed leaves the discharge area (FIGS. 6C and 6D).
  • the weirs 21b and 21d are moved into the closed position and the weirs 21a and 21b in the open position, so that the next wafers (1) can move into the infeed and outfeed area and the arrangement shown in FIG. 6A results again.
  • Wafers are transported upright and parallel to the surface through a process plant for transport. As a result, the space required per wafer is reduced from approximately 160 x 160 mm 2 to 160 x 5 mm 2 , which leads to a significant increase in the wafers processed in parallel and thus in the system throughput.
  • This accumulation device (21) is provided with a number of slots (22) corresponding to the number of wafers through which the wafers can be moved into the accumulated process solution.
  • 50 wafers are processed in parallel, so that the storage device (21) is provided with 50 slots (22).
  • the transport rollers (2) and the hold-down rollers (3) are provided with a profile so that the wafers are guided in small recesses in the rollers and protected against lateral tilting. Throughput of the wafers can be significantly increased by transporting the wafers vertically.
  • the bath surface is significantly smaller in relation to the number of wafers processed at the same time.
  • nitrogen oxides are released into the exhaust air in a more concentrated manner, which simplifies their aftertreatment.
  • the smaller bath surface reduces the total load of nitrogen oxides in the exhaust air. Some of the nitrogen oxides remain in the process solution and are subject to a further reaction there. This reduces the consumption of nitric acid in the etching process.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)

Abstract

La présente invention concerne un dispositif et un procédé de traitement de plaquettes. Selon l'invention, les plaquettes sont transportées selon une orientation verticale grâce à la solution de processus utilisée pour leur traitement, ce qui permet une augmentation du rendement, une simplification du post-traitement de l'air d'échappement ainsi qu'une réduction de la consommation de composants de la solution de processus. L'invention peut être utilisée, entre autres, dans la fabrication de cellules solaires ou de cartes de circuits imprimés, par exemple des cartes de circuits imprimés pour l'industrie électrique.
EP20703704.5A 2019-01-31 2020-01-30 Dispositif et procédé de traitement de plaquettes Pending EP3918631A1 (fr)

Applications Claiming Priority (2)

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DE102019102492.7A DE102019102492A1 (de) 2019-01-31 2019-01-31 Vorrichtung und Verfahren zur Bearbeitung von Wafern
PCT/EP2020/052344 WO2020157229A1 (fr) 2019-01-31 2020-01-30 Dispositif et procédé de traitement de plaquettes

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JP (1) JP2022524293A (fr)
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US20220173265A1 (en) 2022-06-02
CN113544835A (zh) 2021-10-22
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DE102019102492A1 (de) 2020-08-06
JP2022524293A (ja) 2022-05-02

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