EP3799664A1 - Substrat métal-céramique comportant sur sa face inférieure un film mis en forme de façon à permettre un refroidissement direct - Google Patents

Substrat métal-céramique comportant sur sa face inférieure un film mis en forme de façon à permettre un refroidissement direct

Info

Publication number
EP3799664A1
EP3799664A1 EP19739280.6A EP19739280A EP3799664A1 EP 3799664 A1 EP3799664 A1 EP 3799664A1 EP 19739280 A EP19739280 A EP 19739280A EP 3799664 A1 EP3799664 A1 EP 3799664A1
Authority
EP
European Patent Office
Prior art keywords
metallization
insulator substrate
metal
substrate
structuring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19739280.6A
Other languages
German (de)
English (en)
Inventor
Peter Dietrich
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heraeus Electronics & Co Kg GmbH
Original Assignee
Heraeus Deutschland GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heraeus Deutschland GmbH and Co KG filed Critical Heraeus Deutschland GmbH and Co KG
Publication of EP3799664A1 publication Critical patent/EP3799664A1/fr
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/053—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an inorganic insulating layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
    • H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
    • H05K1/188—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit manufactured by mounting on or attaching to a structure having a conductive layer, e.g. a metal foil, such that the terminals of the component are connected to or adjacent to the conductive layer before embedding, and by using the conductive layer, which is patterned after embedding, at least partially for connecting the component

Definitions

  • the present invention relates to a metal-ceramic substrate with direct cooling.
  • the present invention furthermore relates to a method for producing and using the metal-ceramic substrate according to the invention.
  • Metal-ceramic substrates in particular those in the form of printed circuit boards for electrical and electronic circuits or modules, and methods for producing such metal-ceramic substrates are generally known.
  • these substrates consist of a ceramic insulating layer, which is provided with a metallization on each of its two surface sides.
  • the metallization is usually carried out by a metal foil, e.g. made of copper or a copper alloy, which is connected over the entire surface to the ceramic insulating layer using a suitable method.
  • the DCB method Direct-Copper-Bond-Verfa ren
  • the copper of the copper foil is first oxidized to copper oxide (Cu 2 O) on the surface.
  • the melting point of copper oxide (Cu 2 0) is lower than the melting point of pure copper and the copper foil coated with copper oxide is placed on the surface of the ceramic substrate and heated in an oven. In the melt, the lower side of the copper foil, which consists of copper oxide, joins the ceramic surface.
  • This DCB process generally has the following process steps:
  • the so-called active soldering method is known for connecting metal layers or metal foils forming metallizations, in particular also copper layers or copper foils or aluminum layers or aluminum foils, with a ceramic material.
  • a connection between a metal foil, for example copper foil, and a ceramic substrate, for example an aluminum nitride ceramic is usually produced at a temperature between 800 and 1000 ° C. using a hard solder, which in addition to a main component, such as Copper, silver and / or gold also contains an active metal.
  • This active metal which is, for example, at least one element from the group Hf, Ti, Zr, Nb, Ce, creates a connection between the solder and the ceramic by chemical reaction, while the connection between the solder and the metal is a metallic brazing connection ,
  • a further possibility for producing metal-ceramic substrates is provided by the procedure described in WO 2017/108939 A, according to which a thick film paste is applied either to the ceramic substrate or the metal foil and then the ceramic substrate and the metal foil to one another get connected.
  • MCS metal ceramic substrates
  • MCS metal ceramic substrates
  • metal-ceramic substrates range from applications in the field of power electronics such as in the field of wind turbines, traction, drives, pumps, automotive, etc. to applications in the field of sensors and LEDs, ie wherever modules in large temperature ranges and must remain permanently functional under very high currents and current pulses. They can be found, for example, in IGBT or MOSFET transistor modules, in frequency converters or in current converters. With a coefficient of thermal expansion close to that of silicon, they are suitable for chip-on-board connections. As already indicated above, the heat generated when the components are switched must be dissipated via the substrate, which is initially possible due to the high thermal conductivity of the ceramic combined with the high thermal capacity and thermal expansion of the copper.
  • the “second” metallization ie the metallization opposite the metallization forming the electronic circuits, generally forms an intermediate layer, which in particular enables a connection to a metallic base plate and an improved thermal transition between the ceramics - Layer and this metallic base plate on which the metal-ceramic substrate is arranged and which in turn is connected to a heat sink or a heat sink.
  • the connection between the metal-ceramic substrate and the base plate is for example a soldering or sintered connection.
  • Corresponding metal-ceramic substrates provided with separate heat sinks are known, for example, from publication EP 0 751 570 A, in which it is described that the heat sink is screwed under a metal-ceramic substrate.
  • the document US Pat. No. 5,847,929 also relates to a metal-ceramic substrate in which a separate heat sink is connected to the metal-ceramic substrate via a silicone-containing adhesive layer.
  • the publication DE 10 2009 045 063 A describes a metal-ceramic substrate with a separate molded heat sink.
  • the document US 2012/0282454 A relates to a metal-ceramic substrate with a separate heat sink consisting of a foam material.
  • Direct cooling is understood to mean that one of the two metallizations has structural elements which deviate from a flat structure and which can be in contact with a cooling medium.
  • Such direct cooling of the metal-ceramic substrates is preferred in particular in automotive applications and traction applications (applications in the field of railway technology).
  • a heat sink is used instead of a flat base plate, in which the underside is correspondingly so developed that it can be washed directly with a cooling medium.
  • This heat sink is connected to the ceramic substrate via the metallization of the metal-ceramic substrate (i.e. the base plate is formed directly with a cooler structure). In this way, the thermal path around the connection of the base plate to the cooler is shortened using thermal conductive paste and thermal conductive pastes are no longer necessary.
  • Such a metal-ceramic substrate is also described, for example, in publication WO 2013/120486 A, in which a metal-ceramic substrate and a method for its production are proposed, the metal-ceramic substrate comprising at least one ceramic layer which is provided with at least a first metallization on a first surface side and with a second metallization on a second surface side opposite the first surface side.
  • the second metallization on the underside of the ceramic layer is imperatively made of aluminum or an aluminum alloy and at the same time is designed as a heat sink.
  • the cooling body is basically produced by first producing a completely planar second metallization from aluminum or an aluminum alloy on the ceramic substrate and then the structural elements required for cooling, ie projecting outwards Cooling elements are generated by partial removal of the second metallization.
  • the metallization is removed by etching, laser treatment and / or mechanical processing processes, for example by sawing. Therefore, the application of the teaching of WO 2013/120486 A requires the execution of further processing steps after the generation of the second metallization in order to form the second metallization as a cooling element.
  • the resulting height of the cooling elements can at most correspond to the layer thickness of the second metallization, since the cooling elements are formed by a partial removal of this second metallization.
  • the layer thickness of the second metallization made of aluminum or an aluminum alloy is a maximum of 1.00 mm, so that the cooling elements created by removal can have a maximum height of less than 1.00 mm.
  • metal-ceramic substrates with indirect cooling have prevailed in recent years, particularly in applications in the automotive sector.
  • Corresponding metal-ceramic substrates can be used modularly and offer advantages in terms of cost and weight due to the material savings.
  • the organic intermediate layer can be, for example, a dielectric insulation film as used in the power module according to DE 10 2011 088 218 A1.
  • the dielectric insulation film is fixed on a heat sink by means of adhesive layers.
  • the present invention has as its object to provide metal insulator substrates which have a simpler structure and can nevertheless be cooled effectively.
  • metal insulator substrates should preferably enable inexpensive production of corresponding power modules. This is achieved in particular by the fact that there is little or no material loss during the production of the metal insulator substrate according to the invention or during the structuring of the second metallization of the metal insulator substrate according to the invention, as can be seen below.
  • these metal insulator substrates should preferably have a compact design and in particular should be able to do without the relatively large heat sinks (or heat sinks) conventionally used.
  • Sintering or soldering a chip that has an integrated system is easier compared to a system that has a substrate and a separately connected heat sink, since it is comparatively significantly less thermal Mass is introduced in the process. The introduction of less thermal mass in turn has an impact on the process time, on the accuracy of the temperature profile of the process and on the deflection of the entire system.
  • a metal insulator substrate comprising a. an insulator substrate with a top and a bottom; b. a first metallization on the top of the insulator substrate, which is intended for the formation of circuit electronics or is provided with at least one circuit electronics; and c. solved a second metallization on the underside of the insulator substrate, wherein
  • the second metallization is formed of metal-insulator-substrate of the invention as a heat sink
  • the second metallization for direct cooling is provided with a structure in such a way that the area of the second metallization available for cooling is enlarged in comparison to a planar structure of the second metallization, and the features have a height of at least Have 700 pm.
  • the metallization of the insulator substrate opposite the circuit electronics acts directly as a heat sink or heat sink.
  • a connection of a separate heat sink, for example via a metallic base plate, or the use of a base plate designed as a heat sink is preferably not provided within the scope of the present invention.
  • a metallization designed as a heat sink is understood to mean a metallization that enables active cooling of the metal insulator substrate; Active cooling is in turn preferably understood to mean that the metallization is in direct contact with a cooling medium.
  • the cooling medium is preferably liquid or gaseous, more preferably liquid.
  • the metal insulator substrate according to the invention has at least one metallization on the top side and at least one metallization on the bottom side of the insulator substrate.
  • the use of the terms top and bottom of the insulator substrate does not represent a spatial preference for surfaces of the metal insulator substrate, but only serves to differentiate the two surfaces of the insulator substrate. These two surfaces of the insulator Strats, on which the two metallizations are provided, are arranged opposite one another, are separated from one another by the insulator substrate and generally represent the largest areas of the insulator substrate in terms of area.
  • planar structure of the second metallization is only used as a theoretical reference and does not necessarily presuppose that a planar structure must exist in the second metallization.
  • the first metallization on one side of the insulator substrate serves to form the circuit electronics.
  • the circuit electronics For example, power and logic modules, but also structuring of conductor tracks and contact surfaces and / or mounting surfaces for electronic components, are provided on this first metallization.
  • the second metallization on the other side of the insulator substrate (opposite to the first metallization), in the present case referred to as the underside of the insulator substrate, is used for direct cooling of the metal-insulator substrate.
  • the present invention thus provides that the heat sink is an integral part of the metal insulator substrate; a separate heat sink, to which the metal insulator substrate is connected, is therefore generally dispensed with in the context of the present invention.
  • a special embodiment of the present invention thus does not comprise a separately designed heat sink to which the metal insulator substrate is connected.
  • the insulation layer of the metal-insulator substrate according to the invention is not subject to any restrictions as long as the insulation layer functions as a sufficient dielectric.
  • the insulation layer that is present between the first and second metallization can be a ceramic layer (ceramic substrate).
  • a metal-ceramic substrate results.
  • the insulation layer is a metal substrate which is coated with an organic insulator, as sold, for example, by Mitsubishi Electric Corporation.
  • it can be a plastic insulation layer layer, for example a plastic film.
  • Power modules comprising the metal insulation substrates according to the invention, are less expensive to produce, since the separate production of a heat sink and the work step of connecting the metal insulator substrate and heat sink can be dispensed with.
  • the second metallization with the cooling structure has a layer thickness such that the resulting metal insulator substrate according to the invention with direct cooling in the concrete application requires significantly less space than a conventional metal insulator substrate with a separate cooler.
  • a metal-insulator substrate as described above is claimed, ie an insulator substrate with metallizations provided on both sides of the insulator substrate, a cooling medium being in contact with one of the two metallizations.
  • This cooling medium can be gaseous or liquid, but preferably liquid.
  • the second metallization for direct cooling is provided with a structuring.
  • This structuring serves to enlarge the area of the second metallization available for cooling - in comparison to a planar structure of the second metallization - so that cooling is efficiently made possible by a cooling medium in contact with this surface.
  • This cooling medium can be gaseous or liquid, but preferably liquid.
  • the structuring of the second metallization for direct cooling can be designed in a first embodiment in such a way that at some points the second metallization is partially or completely removed in comparison to a planar structure of the second metallization and the cooling medium used at these points thus up to Insulator substrate is sufficient.
  • An embodiment in which the cooling medium extends as far as the insulator substrate can result, for example, if the second metallization is formed from a pre-structured, for example stamped, metal foil, from which part of the metal coatings is removed from the original metal foil plane by stamping was made, so that ultimately recesses result in the second metallization.
  • the second metallization is formed from a pre-structured metal foil produced by embossing, without areas of the metallization being completely removed.
  • the second metallization is designed such that the side of the second metallization facing away from the insulator substrate has protruding features, the side of the second metallization facing the isolator substrate having cavities corresponding to these features.
  • the second metallization is formed from a pre-structured metal foil produced by “partial punching and / or bending” without, however, removing areas of the metallization.
  • “partial stamping and / or bending” means the removal of partial areas from the second metallization, with no removal of the metallization in the sense of removing the metallization.
  • the superscript part (by folding up) remains connected to the second metallization and is bent so that this partial area protrudes from the second metallization and thus increases its surface area.
  • the “separated” part (folded up part) leaves recesses at these points that can reach as far as the insulator substrate. Since, as mentioned above, no mass is removed during this process in the sense of removal, the mass of the second metalization remains unchanged before and after the “partial stamping and bending”. A corresponding illustration to explain this structuring is shown in Figure 11.
  • the above process can be further optimized.
  • the second metallization already has structuring in the form of recesses and / or features according to the above embodiments, which are preferably carried out by a stamping process, an embossing process or by a process of partial stamping and / or before the attachment to the insulator substrate. or bending (as described above).
  • the second metallization is formed from a foil comprising copper or aluminum, preferably a copper foil, into which the cooling structures are stamped, stamped, or partially stamped before being connected to the insulator substrate.
  • a concave-convex structure is provided; A corresponding representation of this structuring of the second metallization on the side facing away from the insulator substrate is shown in FIG. 5.
  • a further embodiment of the structuring of the second metallization of the metal insulator substrate according to the invention needles are provided.
  • a further embodiment of the structuring of the second metallization of the metal insulator substrate according to the invention provides for a pin-fin structure; A corresponding representation of this structuring of the second metallization on the side facing away from the insulator substrate is shown in FIG. 6.
  • the shapes are provided with curves that stabilize the features during serve the bond so that the metal (eg Cu), which is soft due to the flashing of the bond, does not break down.
  • Figure 13 shows examples of shapes (pins) with curves of different shapes.
  • Metal insulator substrates are usually fixed using a direct metal ßo / icf process in a bond furnace; the basic features of the corresponding method steps have already been explained above and are known to the person skilled in the art in the underlying technical field.
  • the metallizations on the two sides of the insulator substrate are generally carried out from a metal foil. It is therefore preferably provided in the context of the present invention that the second metallization, which is used to form the direct cooling structure, is likewise formed by a film.
  • the second metallization which comprises the structuring used for cooling, generally has a layer thickness of at least 700 pm, preferably at least 800 pm, even more preferably at least 900 pm, even more preferably at least 1000 pm, even more preferably more than 1000 pm, on.
  • Further suitable layer thicknesses are 100 to 3000 pm, preferably 500 to 3000 pm, even more preferably 800 to 3000 pm, even more preferably 1000 to 3000 pm, even more preferably more than 1000 to 3000 pm.
  • Still further preferred layer thicknesses of the second metallization are 100 to 1500 pm, preferably 150 to 1200 pm, even more preferably 200 to 800 pm.
  • the second metallization can, as already mentioned, be completely removed (first case) or be protruding from the original metal foil level (second case). In these cases, the second metallization can be applied discontinuously on the underside of the insulator substrate.
  • the second metallization on the insulator substrate can also remain over the entire surface, ie the structures for direct cooling, which in this case are formed only by partial removal or peeling and / or bending of the metallization, do not extend to the insulator substrate. In this case, provision is therefore made for the second metallization to be applied continuously to the underside of the insulator substrate.
  • the term “peeling and / or bending” is used to len of sub-areas understood from the second metallization, with no removal of the metallization in the sense of removing the metallization.
  • the peeled part remains connected to the second metallization and is bent such that it protrudes from the metallization and thus increases the surface area of the second metallization that comes into contact with the cooling medium. Due to the process of peeling and / or bending the second metallization, the mass of the metallization remains unchanged before and after the "peeling". A corresponding representation of this structuring is shown in Figure 12.
  • the geometric shapes of the second metallization which are preferably formed by stamping (forming recesses), embossing (forming embossments) or partial stamping or peeling and / or bending (forming exposed partial areas), are also referred to collectively as structuring within the scope of the present invention.
  • the structures of the second metallization which are produced by preferably stamping, embossing or partial stamping or peeling and / or bending, on the side facing away from the insulator substrate and which are formed before being connected to the insulator substrate, have a height of at least 700 ⁇ m, preferably at least 800 pm, even more preferably at least 900 pm, even more preferably at least 1000 pm, even more preferably more than at least 1000 pm. Further suitable heights are defined above.
  • the structuring which is preferably produced by stamping, embossing or partial stamping or peeling and / or bending on the side of the second metallization facing away from the insulator substrate, can have a height (h) which is greater than the layer thickness of the second metallization itself
  • h the height of the second metallization itself
  • the structures have a height (h) of preferably at most 15000 pm, even more preferably at most 12000 pm, even more preferably at most 10000 pm, even more preferably at most 8000 pm, even more preferably at most 5000 pm, even more preferably at most 3000 pm , on.
  • the structures have a height (h) of preferably 700-15000 pm, preferably 800-15000 pm, preferably 900-15000 pm, preferably 1000-15000 pm, preferably> 1000-15000 pm.
  • the structures have a height (h) of preferably 700-12000 pm, even more preferably 800-12000 pm, even more preferably 900-12000 pm, even more preferably 1000-12000 pm, even more preferably> 1000-12000 pm.
  • the structures have a height (h) of preferably 700-10000 pm, even more preferably 800-10000 pm, even more preferably 900-10000 pm, even more preferably 1000-10000 pm, even more preferably> 1000-10000 pm.
  • the structures have a height (h) of preferably 700-8000 pm, even more preferably 800-8000 pm, even more preferably 900-8000 mhti, even more preferably 1000-8000 pm, even more preferably> 1000-8000 pm.
  • the structures have a height (h) of preferably 700-5000 pm, even more preferably 800-5000 pm, even more preferably 900-5000 pm, even more preferably 1000-5000 mpi, even more preferably> 1000-5000 mpi.
  • the structures have a height (h) of preferably 700-3000 pm, even more preferably 800-3000 pm, even more preferably 900-3000 mm, even more preferably 1000-3000 mm, even more preferably> 1000-3000 pm.
  • the height of the structuring means the maximum distance between the second metallization and the base area of the second metallization, the base area of the second metallization
  • the base area is formed by the insulator subtart.
  • the base area is formed by this (intermediate) copper layer; this avoids contact of the cooling medium with the insulator substrate, which can be particularly advantageous in DCB applications.
  • the metal insulator substrate according to the invention can be a DCB arrangement, a DAB arrangement, an AMB arrangement or a TFCB arrangement.
  • a copper foil (as the first and second metallization) is bonded directly onto a ceramic substrate (as an insulator substrate) using the known DCB method.
  • a further copper layer can be provided between the ceramic substrate and the second metallization.
  • an aluminum foil is bonded directly onto a ceramic substrate (as an insulator substrate) using the known DAB method as the first and second metallization;
  • the second aluminum metallization on the underside of the ceramic substrate can already be pre-structured for direct cooling or can be provided with a structure for direct cooling after bonding.
  • a metallization for example a copper metallization
  • a ceramic substrate as an insulator substrate
  • a metal for example titanium
  • the second metallization can be soldered onto the ceramic substrate, for example, initially over the entire area with a subsequent structuring for direct cooling, or the soldering process of the metallization can already take place with the formation of the structuring for direct cooling.
  • a ceramic substrate (as an insulator substrate) is used, the metallizations being connected to the ceramic substrate via a thick-film film paste, for example containing a metal and B12O3 or a metal and optionally a glass material.
  • the metallization provided as the second metallization on the underside of the ceramic substrate for direct cooling can be structured before or after being connected to the insulation substrate for direct cooling.
  • Corresponding metal insulator substrates are known from WO 2017/108939 A, the disclosure of which in this regard is incorporated by reference into the present invention.
  • the second metallization is applied directly to the insulator substrate, optionally via an active solder connection (AMB) or a thick film paste (TFCB).
  • AMB active solder connection
  • TFCB thick film paste
  • the metal insulator substrate according to the invention usually has a ceramic subsate which is generally selected from the group consisting of aluminum oxide, aluminum nitride, silicon nitride, silicon carbide and a mixed ceramic made of aluminum oxide or aluminum nitride and zirconium oxide.
  • the insulator substrate can also deviate from a ceramic substrate and can be formed, for example, by a plastic film or by a metal substrate coated with resin. These arrangements are, for example, an ISS arrangement.
  • ISS Anordnuno In the ISS arrangement, metal foils are connected as a first and second metallization to a plastic foil or a resin-coated metal substrate (as an insulator substrate), for example by an adhesive layer.
  • the second metallization on the underside of the plastic film or the coated metal substrate can already be pre-structured for direct cooling or can be provided with a structure for direct cooling after connection.
  • the metal insulator substrate according to the invention is usually arranged in an enclosing housing, the housing generally additionally comprising a cooling medium.
  • the cooling medium used for cooling the metal-insulator substrate according to the invention which flows around the second metallization, in particular on the structure produced, can be liquid or gaseous, but preferably liquid.
  • the metal insulator substrate according to the invention also usually has a first metallization.
  • This first metallization on the side of the insulator substrate opposite the second metallization usually has circuit electronics, for example structuring for forming at least one power and / or logic part, structuring of conductor tracks, structuring of contact surfaces and / or fastening surfaces for electrical components.
  • Another object of the present invention is a method for producing the metal insulator substrate according to the invention, comprising a. an insulator substrate with at least one top and at least one bottom; b. a first metallization on the top of the insulator substrate, which is intended for the formation of circuit electronics or is provided with at least one circuit electronics; and c. a second metallization on the underside of the insulator substrate.
  • the second metallization on the underside of the insulator substrate, the second metallization already having a structure suitable for direct cooling when it is applied to the insulator substrate, or after the application to the insulator substrate the second metallization is provided with a structure for direct cooling.
  • the second metallization preferably already has a structuring in the form of recesses or embossments, preferably produced by stamping or embossing, before being applied to the insulator substrate.
  • the process according to the invention is characterized in particular by the following process steps:
  • T Providing an insulator substrate with at least one top and at least one bottom;
  • the metallization applied in this process is the second metallization which, as described above, is used for direct cooling of the metal insulator substrate.
  • the structuring can take place by means of embossing, punching or partial punching and / or bending.
  • the structuring can be formed by partial removal or peeling and / or bending of the metallization.
  • peeling and / or bending is understood to mean the removal of partial areas from the second metallization, the metallization not being removed in the sense of removing the metallization.
  • the peeled-off part remains connected to the second metallization and is optionally bent so that it protrudes from the metallization and thus the surface of the second metallization that comes into contact with the cooling medium is enlarged.
  • the mass of the metal foil remains unchanged before and after the peeling.
  • the structuring can also be carried out in the metal foil by embossing, stamping or partial stamping or peeling and / or bending before being applied to the insulator substrate.
  • metallization can take place on the top of the insulator substrate by means of a bonding process, on which corresponding circuit electronics are subsequently provided.
  • first metallization can also be produced before or after the second metallization has been applied.
  • present invention relates to the use of the previously described metal insulator substrate in circuit electronics and to a power semiconductor module that comprises the previously described metal insulator substrate.
  • This use is particularly characterized in that the cooling is carried out by a medium that is in direct contact with the second metallization; If the second metallizations have structures for direct cooling, which are formed by recesses in the second metallization, the cooling medium used is also in direct contact with the insulator substrate or a material that is used to connect the second metallization with the insulator substrate.
  • FIG. 1 shows a metal-insulator substrate 1 according to the invention, which has a first and a second metallization 3, 4 applied to an insulator substrate 2.
  • the first metallization 3 serves to hold circuit electronics (not shown), while the second metallization 4 has a structuring 5 for direct cooling.
  • This metal insulator substrate 1 is an arrangement which is produced by the DCB method.
  • FIG. 2 shows a metal-insulator substrate 1 according to the invention, which has a first and a second metallization 3, 4 applied to an insulator substrate 2.
  • the first metallization 3 serves to hold circuit electronics (not shown), while the second metallization 4 has a structuring 5 for direct cooling.
  • This metal-insulator substrate is an arrangement which is produced by the TFCB process and therefore has an intermediate layer 6 between the insulator substrate and the first and second metallizations.
  • the intermediate layer is formed by a thick-film film paste which contains a metal and B1 2 O 3 or a metal and optionally a glass material.
  • the intermediate layer 6 can be present between the insulator substrate 2 and both metallizations 3, 4 or only between the insulator substrate 2 and the metallization 3 or 4.
  • FIG. 3 shows a metal-insulator substrate 1 according to the invention, which has a first and a second metallization 3, 4 applied to an insulator substrate 2.
  • the first metallization 3 serves to hold circuit electronics (not shown), while the second metallization 4 has a structuring 5 for direct cooling.
  • This metal insulator substrate is an arrangement which is produced by the AMB process and therefore has an intermediate layer 7 as a hard solder between the insulator substrate and the metallization.
  • the intermediate layer 7 can be present between the insulator substrate 2 and both metallizations 3, 4 or only between the insulator substrate 2 and the metallization 3 or 4.
  • FIG. 4 shows a metal-insulator substrate 1 according to the invention, which has a first and a second metallization 3, 4 applied to an insulator substrate 2.
  • the first metallization 3 serves to hold circuit electronics (not shown), while the second metallization 4 has a structuring 5 for direct cooling.
  • This metal-insulator substrate is an arrangement which is generally produced by soldering, sintering or gluing and therefore has a corresponding intermediate layer 8 between the insulator substrate and the second metallization.
  • the intermediate layer 8 can be present between the insulator substrate 2 and both metallizations 3, 4 or only between the insulator substrate 2 and the metallization 3 or 4.
  • the intermediate layer 8 is only between the insulator substrate and the Figure 5 shows a possible structuring 5 of a metal-insulator substrate 1 according to the invention on the second metallization 4 on the side facing away from the insulator substrate 2.
  • the structuring 5 is designed in such a way that a concave-convex structure results.
  • the cooling medium which is not shown in the present figure, flows along the concave-convex structure and cools the metal insulator substrate 1.
  • FIG. 7 shows a possible structuring 5 of a metal insulator substrate 1 according to the invention on the second metallization 4 on the side facing away from the insulator substrate 2.
  • the structuring 9 is designed in such a way that a nub structure results.
  • the cooling medium which is not shown in the present figure, flows along the knob structure and cools the metal insulator substrate 1.
  • Figure 8 shows a schematic three-dimensional structure of a power semiconductor module according to the invention. Shown is the first metallization 3, which is now structured for receiving power electronics, the insulator substrate 2 and the second metallization 4, which has a nub-like structure on the underside.
  • the metal insulator substrate 1 according to the invention is introduced into a housing 10 and provided with a seal 9.
  • the housing 10 has openings for the inlet and / or outlet of the cooling medium, which are not shown.
  • FIG. 9 shows a possible structuring 5 of a metal insulator substrate 1 according to the invention on the second metallization 4 on the side facing away from the insulator substrate 2.
  • the structuring 5 is designed such that protruding forms result.
  • the cooling medium flows along this structuring and cools the metal insulator substrate 1.
  • Figure 10 shows a possible structuring of a DCB arrangement, wherein a further copper layer 11 can be provided between the ceramic substrate 12 and the second metallization 4.
  • Figures 11 a) and bl show two different representations of a possible structuring of a pre-structured metal foil produced by “partial punching and / or bending”.
  • the "stamped" sub-areas of the metallization are not removed.
  • the "separated” part remains connected to the second metallization and is bent so that this part protrudes from the second metallization and thus increases its surface area. In this process, no mass is removed in the sense of removal, so the mass of the metal foil remains unchanged before and after the “partial punching and bending”.
  • the value h represents the height of the features or the protruding partial areas of the second metallization, which height can be greater than the layer thickness of the second metallization itself.
  • Figure 12 is a schematic representation of a structuring which is formed by “peeling and / or bending” the second metallization.
  • this structuring partial areas are removed from the second metallization, with no removal of the metallization in the sense of removal of the metallization.
  • the peeled-off part remains connected to the second metallization and is bent in such a way that it protrudes from the metallization and thus increases the surface area of the second metallization that comes into contact with the cooling medium.
  • the mass of the metallization remains essentially unchanged before and after the “peeling”.
  • Figure 13 is a schematic representation of a further embodiment of the structuring of the second metallization 4 of the metal insulator substrate 1 according to the invention, the expressions being provided with curves.
  • This shaping is particularly advantageous if a metal foil that is already structured is used in the method according to the invention.
  • This shaping of the forms with curves rounds out the stabilization of the forms during the bond, so that the metal (eg Cu), which is soft due to the heat of the bond, does not collapse.
  • Figure 14 is a schematic representation of features according to the invention which have different curves.
  • Figure 14 a) corresponds to a conical rounding 15 of the shape, whereby Figure 14 b) corresponds to a cylindrical round 16 of the shape.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Structure Of Printed Boards (AREA)

Abstract

L'invention concerne un substrat métal-isolant qui comporte une structuration de la métallisation permettant un refroidissement direct. L'invention concerne également un procédé de fabrication de ce substrat métal-isolant.
EP19739280.6A 2018-07-12 2019-07-11 Substrat métal-céramique comportant sur sa face inférieure un film mis en forme de façon à permettre un refroidissement direct Pending EP3799664A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP18183126.4A EP3595002A1 (fr) 2018-07-12 2018-07-12 Substrat métal-céramique pourvu d'un film formé pour un refroidissement direct comme côté inférieur du substrat
PCT/EP2019/068642 WO2020011905A1 (fr) 2018-07-12 2019-07-11 Substrat métal-céramique comportant sur sa face inférieure un film mis en forme de façon à permettre un refroidissement direct

Publications (1)

Publication Number Publication Date
EP3799664A1 true EP3799664A1 (fr) 2021-04-07

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EP18183126.4A Withdrawn EP3595002A1 (fr) 2018-07-12 2018-07-12 Substrat métal-céramique pourvu d'un film formé pour un refroidissement direct comme côté inférieur du substrat
EP19739280.6A Pending EP3799664A1 (fr) 2018-07-12 2019-07-11 Substrat métal-céramique comportant sur sa face inférieure un film mis en forme de façon à permettre un refroidissement direct

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US (1) US20210125895A1 (fr)
EP (2) EP3595002A1 (fr)
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WO (1) WO2020011905A1 (fr)

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DE29510335U1 (de) 1995-06-26 1995-08-24 Siemens AG, 80333 München Elektronisches kombiniertes Logik-Leistungsmodul
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JP4649027B2 (ja) * 1999-09-28 2011-03-09 株式会社東芝 セラミックス回路基板
JP4133170B2 (ja) * 2002-09-27 2008-08-13 Ｄｏｗａホールディングス株式会社 アルミニウム−セラミックス接合体
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JP5686606B2 (ja) * 2010-01-12 2015-03-18 日本軽金属株式会社 フィン一体型基板の製造方法およびフィン一体型基板
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US20210125895A1 (en) 2021-04-29
CN112567510A (zh) 2021-03-26
WO2020011905A1 (fr) 2020-01-16
EP3595002A1 (fr) 2020-01-15

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