EP3682045A1 - Procédé pour le traitement de surface d'un échantillon qui présente au moins une surface d'un oxyde métallique et oxyde métallique pourvu de la surface traitée - Google Patents

Procédé pour le traitement de surface d'un échantillon qui présente au moins une surface d'un oxyde métallique et oxyde métallique pourvu de la surface traitée

Info

Publication number
EP3682045A1
EP3682045A1 EP18779555.4A EP18779555A EP3682045A1 EP 3682045 A1 EP3682045 A1 EP 3682045A1 EP 18779555 A EP18779555 A EP 18779555A EP 3682045 A1 EP3682045 A1 EP 3682045A1
Authority
EP
European Patent Office
Prior art keywords
metal oxide
oxide
solution
reduced
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP18779555.4A
Other languages
German (de)
English (en)
Inventor
Ibrahim Yilmaz Ahmet
Roel Van De Krol
Fatwa Firdaus ABDI
Yimeng Ma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Original Assignee
Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH filed Critical Helmholtz Zentrum Berlin fuer Materialien und Energie GmbH
Publication of EP3682045A1 publication Critical patent/EP3682045A1/fr
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/34—Pretreatment of metallic surfaces to be electroplated
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • C25D5/56—Electroplating of non-metallic surfaces of plastics
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/54—Electroplating of non-metallic surfaces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO

Definitions

  • the present invention relates to a method of surface treatment of a sample having at least one surface of a metal oxide (MO), which metal oxide may be, for example, a transparent conductive oxide (TCO), such as in electrodes in Solar panels, interactive panels, light-emitting diodes and other applications is used.
  • MO metal oxide
  • TCO transparent conductive oxide
  • TCO Transparent conductive oxides
  • electrodes in particular as contacts in solar cells, optoelectronic devices or devices for solar
  • Tin-doped indium oxide Indium Tinn Oxide, ITO, which is widely used as a TCO, has a low surface resistivity of ⁇ 5 ⁇ / D and a volume resistivity of ⁇ 10 ⁇ 4 ⁇ / cm but is 74 % of indium, what its use for energy harvesting equipment in large Scale, such as photovoltaic devices (PV) or
  • Fluorine doped tin oxide can be used as a substitute for ITO, with the advantage of high availability of elemental constituents.
  • the conductivity of FTO is in the
  • the plate resistance of these stacks is 13 ⁇ / D.
  • These stacks of FTO on glass are often commonly referred to in laboratory jargon as "TEC15 TM", which is a trademark of Pilkington Group Limited, L40 5UF, Lathom, of Ormskirk, UK
  • the plate resistance of 13 ⁇ / D can be used in devices in the Therefore, often a highly conductive metal grid (eg made of a metal of the group Cu, Ag, Au, Ni and the like) on the surface of the FTO contact is often detrimental because it causes a not insignificant loss of resistance
  • the coating / grid may have poor electrical contact or even peel off, including the possible damage to a PV module, for example, which has such a combination of TCO and metal coating may mean.
  • US 2015/0259816 A1 discloses a method of electroplating zinc, zinc alloy or zinc oxide onto the surface of a TCO
  • the adhesion is improved by the oxidation of metallic Zn (O) to Zn (II) in contact with the TCO or near the metal / TCO interface to form zinc oxide, thereby providing strong bond adhesion to the TCO.
  • reduction step which can be carried out by a reducing plasma, an electrochemical process or a chemical process.
  • the surface of the TCO is additionally after the
  • Sensitization is carried out in a solution of tin (II) or titanium (III) salts. Due to the sensitization, tin (II) or titanium (III) ions are adsorbed on the surface of the treated TCO and hydrolyzed during the course of the reaction
  • a method is described in which a seed layer is formed on the surface of the TCO by applying nanoparticles or by applying a self-assembling linker material, such as a sulfur-containing silane material, which serves for nucleation in the separation of metal.
  • the seed layer improves the adhesion of the metal to the TCO surface.
  • US 2004-0045930 discloses a method for etching TCO based on a metal powder, in particular zinc, and an etchant, in particular hydrochloric acid (HCl), and wherein this base is based on a metal powder, in particular zinc, and an etchant, in particular hydrochloric acid (HCl), and wherein this base is based on
  • the pH of the solutions used is less than a pH of 0.5.
  • the etching is carried out stepwise, z. B. first by a step with a means for
  • US 3,837,944 is a modified process of US 2004 0045930 in which the zinc powder is introduced into a polymer (immersion) deposited on the surface of a TCO (tin or iridium oxide) and a subsequent reduction step using
  • Hydrochloric acid which causes an etching, is performed.
  • the object of the present invention is to provide a method by which the adhesion of a metallic coating on a metal oxide is improved and, furthermore, is simple in its implementation, inexpensive and time-saving, so that it can also be used on a large scale.
  • a metal oxide treated by the process is claimed.
  • Embodiments are the subject of the dependent claims.
  • the method of the invention comprises at least a first step, step a., Of immersing a sample in an electrolyte solution comprising at least one electron transfer agent and optionally a wetting agent. Thereafter, step b., A reducing agent is added and the surface of the sample is reduced. The reduction is accomplished by removing the sample from the solution and eliminating residues of the solution at the
  • a sample used for the method according to the invention has at least one surface of a metal oxide (MO).
  • MO metal oxide
  • samples are included in which the MO is deposited on a substrate.
  • the present invention relates to an MO whose surface has been treated by the method according to the invention and which has a reduced surface which has metallic or intermetallic phases.
  • the reduced surface of the MO is with a covered, wherein the adhesion of this metallic layer (film), such that this metallic layer by the tearing off, applied to her adhesive tape films - "Scotch Tape Method" - not removed or wiped with a cleaning cloth from the surface
  • the MO whose surface has been treated by the method according to the invention is a TCO.
  • MO metal oxide
  • the MO according to the invention is a TCO, as it corresponds to a preferred embodiment.
  • the TCO whether doped or not, is preferably one of the commonly used TCOs, such as
  • TCO fluorine-doped tin oxide
  • ITO indium-tin oxide
  • ITO indium-tin oxide
  • AZO aluminum-doped zinc oxide
  • tin-doped indium oxide tin-doped indium oxide.
  • the TCO is preferably in the form of a thin film on a substrate, e.g. a glass or plastic substrate.
  • the MO is in particular an undoped metal oxide, which is derived from the usual TCOs, such as one of the group tin oxide (SnO2), zinc oxide (ZnO) or indium oxide ( ⁇ 2 ⁇ 3), gallium oxide
  • TCOs such as one of the group tin oxide (SnO2), zinc oxide (ZnO) or indium oxide ( ⁇ 2 ⁇ 3), gallium oxide
  • a buffer solution that is saturated or 0, 1 M to 5.0 M, and based on glycine, boric acid, citric acid, methanoic acid, acetic acid, formic acid, benzoic acid, ethanoic acid or oxalic acid and a pH between 1, 6 and 4 5, prepared by addition of HCl or H2SO4 (reagent grade) and 0.001 M to 5.0 M sodium hydroxide (NaOH) or potassium hydroxide (KOH) solutions or sodium hydrogenphosphate (Na2HPO or potassium hydrogenphosphate
  • the buffer solution additionally comprises at least one electron transfer agent (ETR), thereby forming the electrolyte solution.
  • ETR consists of a single or multiple redox-active and soluble metal cation of a salt, e.g. in the form of a nitrate, nitrite, sulphate, sulphite, fluoride, chloride, bromide, iodide or of one
  • organometallic complex e.g. in the form of an acetate, citrate, or
  • Acetylacetonate A single ETR or multiple ETRs may be added to the buffer solution in an amount to form a concentration in the range of 0.5M-5M.
  • Possible metal salts are in particular, but not exclusively, from the group: Fe (II) Cl 2, Fe (II) SO 4 .7H 2 O, Ni (II) SO 4 .6H 2 O, Co (NO 3 ) 2.6H 2 O, Bi (NO 3 ) 3.5H 2 O, Zn (NO 3 ) 2.6H 2 O, ZnCl 2 .4H 4 O, SnCl 2 .2H 2 O, and Cu (SO 4 ), as well as one
  • Embodiment corresponds.
  • the choice of one ETR or multiple ETR is determined by the type of metal or alloy formed by the reduction on the surface of the MO. Furthermore, the
  • a metal salt which consists of a single metal or a mixture of metals and has a lower reduction potential than the MO in question, is excluded because it prevents the chemical reduction process described here and is therefore not an ETR for the purposes of the invention.
  • a mask e.g. to form a grid
  • This is preferably done using a polymer-based organic material or by using a chemically resistant one
  • Adhesive tapes such as polyimide tape
  • adhesive tapes such as polyimide tape
  • Procedures are accessible.
  • the surface of the MO is introduced upwardly into the electrolyte solution and preferably immersed in the solution of the invention for a period of 1 minute to 5 minutes, the solution being in a container which can hold the sample horizontally.
  • This ensures that the metal cations of the electron transfer agent (eg Fe 2+ or Ni 2+ ) can diffuse on the surface of the MO, thus giving a homogeneous distribution.
  • the electrolytic solution can be heated from 20 ° C to 60 ° C or used at room temperature ( ⁇ 15 ° C to 22 ° C) and thus can be used at temperatures of 15 ° C to 60 ° C.
  • At least one wetting agent is added to the electrolyte solution from step a.
  • the wetting agent viscous reagent helps to eliminate any precipitates or
  • a wetting agent may e.g. is selected from one of the list below and added to the electrolytic solution in concentrations ranging from 0.001 M to 2 M Preferred wetting agents are selectable from the following group, as is one
  • step b. is a reducing agent consisting of either metallic powders with a particle size of 50 mesh to 2500 mesh, ie
  • the solution of step a. added the amount of reducing agent is preferably in the range of 0.1 mM to 10 mM per 1 cm 2 surface, but is not limited to this value.
  • the reducing agent is added to the electrolyte solution, which is either non-agitated or agitated by stirring or ultrasound (preferably, gentle agitation is sufficient), as in a preferred embodiment.
  • Powder suspension in the solution when the reducing agent is added (a wetting agent from the above list may be used to stabilize the
  • the preferred residence time of the sample in the solution for the reduction operations is 30 minutes to 4 hours.
  • step b the sample is removed from the solution and residues of the solution are eliminated from the surface of the MO, which is step c. corresponds to the method according to the invention. This is preferred by washing the surface with deionized
  • the reduced surfaces of the MO consist of metallic or intermetallic compounds, depending on the electrolyte used and the chemical composition of the MO.
  • the surfaces have a high degree of homogeneity in the degree of reduction and form on the surface of the MO a film of the phases formed from the reduction of the MO, the film correspondingly also having a homogeneous thickness.
  • Reducing agent in step b. which inhibits the reduction of the MO and makes reduction at the surface less uniform. This effect is achieved by increasing the concentration of wetting agent in the electrolyte solution from step a. prevented in the range of 0.01 M to 1 M.
  • FTO or SnO2 as MO the use of a
  • Electrochemical deposition of preferably Ni, Ag, Cu, Sn and / or Au known from the person skilled in electrolyte solutions consisting of the corresponding metal salts, metallized, ie coated with a metal.
  • the reduced surface of the MO is immersed in a corresponding electrolyte solution in a suitable container.
  • Electrochemical deposition of a metallic layer onto the reduced surface of the MO can be accomplished by using an array of either two or three electrodes (ie, the reference electrode is used as a third electrode) in which the reduced MO acts as a cathode, and a conductive and preferably stable one Counter anode (eg Pt) is used.
  • the reduced MO acts as a cathode
  • Counter anode eg Pt
  • TCO is generally conductive as MO, direct contact with the TCO layer can be made to apply a potential to the surface.
  • a substrate of conductive material which may be either metallic, TCO or organic. If the conductivity of an intermediate layer of the MO with a reduced surface area is sufficiently high, the
  • electrochemical deposition take place at a low potential.
  • the reduced metallic or intermetallic layer on the surface of the chemically reduced MO alone is not sufficiently conductive to make direct contact for electrochemical deposition.
  • the electrochemically deposited metallic films exhibit improved adhesion to the (reduced) surface and uniformity in the surface
  • metallic films with thicknesses in the range of 30 nm to 1000 nm preferably using a galvanostatic cathodic current density of -0.01 A cm -2 , and keeping this current density at different time periods to regulate the thickness of the growth, deposited electrochemically on reduced surfaces of the MO. It is advantageous if the counter electrode with the
  • the sample can be removed from the electrolyte solution for electrochemical
  • Removal can be removed and any, possibly existing masking material can be etched or deducted.
  • the MO containing a metallic surface in the unmasked regions is first cleaned with organic solvents, then water containing a wetting agent and then with deionized water and then dried.
  • FIG. 1 shows a sample of metal oxide (MO) 2 having a surface on a substrate 1.
  • Fig. 2 shows a sample of MO 2 having a surface on a substrate 1, wherein the surface of the MO 3, the steps of the invention
  • Fig. 3 shows a sample of MO 2 having a surface on a substrate 1, wherein the surface of the MO 3, the steps of the invention
  • metallized i. a metallic film 4 has.
  • FIG. 4 shows a sample of MO 2 having a surface on a substrate 1, wherein the surface of the MO 3 corresponds to the steps of the invention
  • Fig. 5 shows a sample of MO 2 having a surface on a substrate 1, wherein the surface of the MO 3 has been treated according to the steps of the inventive method and is reduced and wherein before the treatment with the inventive method, the surface of the MO 2 with a Mask 5 was covered. After treatment with the
  • the surface of the reduced MO 3 has been metallized so that a metallic coating (film) 4 is present.
  • Fig. 6 shows the sample of Fig. 5, with the mask 5 shown in Fig. 5 removed (and thus not shown) and 5 trenches remaining in place of the removed mask.
  • Fig. 6 shows the sample of Fig. 5, with the mask 5 shown in Fig. 5 removed (and thus not shown) and 5 trenches remaining in place of the removed mask.
  • On the surface of the MO is now a metallic grid.
  • Fig. 7 shows a sample of MO 2 having a surface on a substrate 1 in a container during step b. of the method according to the invention, i. while the reducing agent A is added to the buffer solution B.
  • Fig. 8 shows a sample of MO 2 having a surface on a substrate 1 in a container during step b. of the process according to the invention, while the reducing agent A is added to the buffer solution B and the surface of the TCO or metal oxide before step a. of
  • Fig. 9 shows five photographs A1 - E1 with scales, with
  • Fig. 10 shows four shots A2 - D2 with scales, with
  • Figure 12 shows X-ray diffraction (XRD) plots taken with grazing incidence of a) a fluorine doped tin oxide (FTO), b) a reduced surface FTO after treatment with the
  • the MO of its surface is to be treated and deposited on a substrate FTO.
  • the buffer solution comprises 2 M glycine and has a pH of 1, 9-2, 1.
  • the ETR is FeSO4 which is added to the buffer solution in a concentration of 1.0M.
  • Zn powder is used as a reducing agent and produces a metallic / intermetallic surface on the FTO corresponding to reduced FTO.
  • Gold (Au) or nickel (Ni) is electrochemically deposited after the surface reduction treatment.
  • an aqueous electrolyte is used which consists of 0.01 M KAu (CN) 2, 0.02 M K (AuCU), O, 13M citric acid, 0.26M potassium citrate, 0.06M C0SO4, 0.05M EDTA, and 0.003M In2 (SO4) 3, pH 4, adjusted with phosphoric acid.
  • an aqueous electrolyte consisting of 1.14M N1SO4.7H2O, 0.16M N1Cl2.6H2O, and 0.73M H3BO3 is used.
  • the zinc powder (100 mesh / 149 pm) is placed on the FTO surface-by adding the zinc powder by scattering into the electrolyte solution-the zinc turns dark gray (indicating that Fe 0 has been formed on the surface of the zinc) and Hydrogen develops.
  • the FTO surface will show a metallic luster after about 1 minute, but ideally will be left untouched for 60 minutes or left under slurry of zinc powders to form a uniform metallic surface. (To form a mask with a grid, the FTO surface can be previously masked with a polymer to expose only the regions that are desired for the gridlines).
  • Surface of the FTO generated by reduction phase consists mainly of an intermetallic Feo.74Sn5 phase containing a tetragonal lattice in the P4 / mcc space group with the parameters of the tetragonal lattice
  • the concentration of FeSO4 is 2.0 M, in a solution and procedure otherwise similar to Example 1, performed on a same sample (FTO with surface on a substrate).
  • the reduction step is influenced by the electrolyte concentration, such that the reduction has a high penetration ( ⁇ 100 nm) at low FeSO4 concentrations ( ⁇ 0.1 M to 0.5 M) (see FIG. 10 B2) and a low penetration depth (FIG. ⁇ 70 nm) (see FIG. 10 A2) at high FeSO 4 concentrations (0.5-1.0 M).
  • this can be attributed to the extent to which the Fe 2+ ions passivate the activity of the reducing agent.
  • traces of amorphous or microcrystalline metallic tin (Sn), metallic iron (Fe), SnO, SnO2, FeO, Fe2O3 and Sn-Fe-O materials are present on the surface or in the Mass of the reduced layer, which is ⁇ 100 nm thick, detectable.
  • the reduced surface is removed from the solution after removal of the sample, to complete the reduction with deionized water and soap
  • Electrochemically a metal film can be deposited on the film formed on the surface of the FTO by the reduced phases.
  • Deposition method for Ni electroplating consists of a
  • the electrochemical deposition is carried out by chronoamperometry using a current density of 0.005 Acnr 2 for a period of 145 s at ⁇ 50 ° C for 200 seconds, forming a nickel film of ⁇ 50 nm to 500 nm. (Note: it is assumed that the Faraday efficiency for the electrochemical deposition of Ni is 100%, so that the actual film thickness may vary).
  • the sample is removed from the electrolyte bath and cleaned with a stream of deionized water. The metal film completely passes the test with the "Scotch Tape Method".
  • the MO to be surface treated is deposited on a substrate and consists of SnO 2.
  • the buffer solution comprises 2 M citric acid with a pH of -2.8-3.2.
  • the ETR is N1SO4 which is added to the buffer solution at a concentration of 2.0M.
  • Zn powder is used as a reducing agent and produces a
  • the film formed on the surface of the SnO2 consists mainly of two relatively amorphous, intermetallic Ni3.3Sn2 and Ni3Sn2 phases
  • the MO to be surface-treated is applied to a substrate and made of ITO.
  • the buffer solution comprises 1 M acetic acid with a pH of ⁇ 3.8 - 4.2.
  • the ETR is FeSO4, that of the buffer solution in a concentration of 2.0 M and In2 (SO4) 3 added in a concentration of 0.1 M.
  • Zn powder is used as a reducing agent and produces a metallic / intermetallic surface on the ITO corresponding to reduced ITO.
  • Gold is electrochemically deposited after the treatment to reduce the surface area.
  • Zinc powder left to form a uniform metallic surface can be previously masked with a polymer to only the regions
  • the surface of the ITO film consists mainly of an amorphous intermetallic phase which can not be determined by XRD analysis.
  • the reduced surface is washed after removal of the sample from the solution with deionized water and soap in the ultrasonic bath and then with ethanol and dried under a stream of air.
  • Electrochemically, a metal film can be deposited on the film formed on the surface of the ITO by the reduced phases.
  • a preferred electrochemical deposition process for Au electroplating consists of 0.01M
  • FCH-JU Fuel Cell and Hydrogen Joint Undertaking

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemically Coating (AREA)
  • Electroplating Methods And Accessories (AREA)

Abstract

La présente invention concerne un procédé qui réduit des surfaces d'oxydes métalliques, qui sont chimiquement réductibles, de telle sorte qu'un film métallique appliqué par la suite présente une adhérence augmentée. Le procédé selon l'invention comprend au moins une première étape (étape a.) consistant à immerger un échantillon, qui présente une surface d'un oxyde métallique, dans une solution électrolytique, qui comprend un agent de transfert d'électrons et, éventuellement, un agent mouillant. Ensuite, l'étape b. consiste à ajouter un agent de réduction et à réduire la surface de l'oxyde métallique. La réduction est interrompue par retrait de l'échantillon de la solution et par élimination de restes de la solution à la surface, étape c. En outre, la présente invention concerne un oxyde métallique, dont la surface a été traitée par le procédé selon l'invention et qui présente une surface réduite, qui présente au moins des phases intermétalliques, et l'adhérence d'une couche métallique, qui est appliquée sur la surface réduite, étant améliorée de manière telle que cette couche métallique ne peut pas être enlevée par arrachage de films de ruban adhésif appliqués sur celle-ci -"Scotch Tape Methode"- ou ne peut pas être enlevée de la surface par essuyage par un chiffon de nettoyage.
EP18779555.4A 2017-09-13 2018-09-06 Procédé pour le traitement de surface d'un échantillon qui présente au moins une surface d'un oxyde métallique et oxyde métallique pourvu de la surface traitée Pending EP3682045A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102017121228.0A DE102017121228A1 (de) 2017-09-13 2017-09-13 Verfahren zur Oberflächenbehandlung einer Probe die mindestens eine Oberfläche eines Metalloxids aufweist und Metalloxid mit behandelter Oberfläche
PCT/DE2018/100758 WO2019052598A1 (fr) 2017-09-13 2018-09-06 Procédé pour le traitement de surface d'un échantillon qui présente au moins une surface d'un oxyde métallique et oxyde métallique pourvu de la surface traitée

Publications (1)

Publication Number Publication Date
EP3682045A1 true EP3682045A1 (fr) 2020-07-22

Family

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EP18779555.4A Pending EP3682045A1 (fr) 2017-09-13 2018-09-06 Procédé pour le traitement de surface d'un échantillon qui présente au moins une surface d'un oxyde métallique et oxyde métallique pourvu de la surface traitée

Country Status (3)

Country Link
EP (1) EP3682045A1 (fr)
DE (1) DE102017121228A1 (fr)
WO (1) WO2019052598A1 (fr)

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US3837944A (en) 1972-09-01 1974-09-24 Nat Starch Chem Corp Selective etching of metal oxides of tin or indium
JPS58224171A (ja) * 1982-06-22 1983-12-26 Seiko Instr & Electronics Ltd 酸化錫膜のエツチング法
US5976396A (en) 1998-02-10 1999-11-02 Feldman Technology Corporation Method for etching
JP2010508636A (ja) 2006-11-01 2010-03-18 バリラン ユニバーシティ 集電体及び導電性配線としてのニッケル−コバルト合金、並びに透明導電性酸化物上へのこれらの堆積
US7799182B2 (en) * 2006-12-01 2010-09-21 Applied Materials, Inc. Electroplating on roll-to-roll flexible solar cell substrates
DE102007046337A1 (de) * 2007-09-27 2009-04-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip, optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
EP2616401A4 (fr) * 2010-09-16 2017-06-28 Specmat Inc. Méthode, procédé et technologie de fabrication pour cellules solaires à base de silicium cristallin, à faible coût et haut rendement
US8580100B2 (en) 2011-02-24 2013-11-12 Massachusetts Institute Of Technology Metal deposition using seed layers
US9755229B2 (en) 2011-06-14 2017-09-05 Brookhaven Science Associates, Llc Intermetallic M—Sn5 (M=Fe, Cu, Co, Ni) compound and a method of synthesis thereof
US20130125968A1 (en) * 2011-11-18 2013-05-23 Sunpreme, Ltd. Low-cost solar cell metallization over tco and methods of their fabrication
JP2014533780A (ja) * 2011-12-02 2014-12-15 アルタナ アーゲー 非導電性基板上に導電構造を製造する方法及びこの方法において製造された構造
US9783901B2 (en) 2014-03-11 2017-10-10 Macdermid Acumen, Inc. Electroplating of metals on conductive oxide substrates

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WO2019052598A1 (fr) 2019-03-21

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