EP3624982A1 - Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen - Google Patents
Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzenInfo
- Publication number
- EP3624982A1 EP3624982A1 EP18717553.4A EP18717553A EP3624982A1 EP 3624982 A1 EP3624982 A1 EP 3624982A1 EP 18717553 A EP18717553 A EP 18717553A EP 3624982 A1 EP3624982 A1 EP 3624982A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- substrate
- etching
- laser
- ratio
- processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title claims abstract description 42
- 238000000034 method Methods 0.000 title claims abstract description 25
- 239000000758 substrate Substances 0.000 title claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 17
- 230000005855 radiation Effects 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims description 6
- 238000003754 machining Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 235000015250 liver sausages Nutrition 0.000 claims 1
- XYSQXZCMOLNHOI-UHFFFAOYSA-N s-[2-[[4-(acetylsulfamoyl)phenyl]carbamoyl]phenyl] 5-pyridin-1-ium-1-ylpentanethioate;bromide Chemical compound [Br-].C1=CC(S(=O)(=O)NC(=O)C)=CC=C1NC(=O)C1=CC=CC=C1SC(=O)CCCC[N+]1=CC=CC=C1 XYSQXZCMOLNHOI-UHFFFAOYSA-N 0.000 claims 1
- 235000019592 roughness Nutrition 0.000 description 10
- 238000000926 separation method Methods 0.000 description 4
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003631 wet chemical etching Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- 238000005299 abrasion Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0006—Working by laser beam, e.g. welding, cutting or boring taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/361—Removing material for deburring or mechanical trimming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/02—Cutting or splitting sheet glass or ribbons; Apparatus or machines therefor
- C03B33/0222—Scoring using a focussed radiation beam, e.g. laser
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0005—Other surface treatment of glass not in the form of fibres or filaments by irradiation
- C03C23/0025—Other surface treatment of glass not in the form of fibres or filaments by irradiation by a laser beam
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
Definitions
- the invention relates to a method for processing, in particular for separating a particular planar substrate by means of laser-induced depth etching, wherein pulsed laser radiation is directed with a spatial laser pulse distance to the substrate and subsequently an anisotropic material removal by etching with an etch rate and an etching time is performed
- LIDE Laser Induced Deep Etching
- a transparent material is conveyed over an elongated region along the beam axis, often across the entire thickness, by means of a laser pulse or pulse train
- the transparent material e.g. in glass plates, modified so that the modification is anisotropically etched in a subsequent wet-chemical etching bath. If the laser pulses are emitted onto the material at a suitable spatial distance along a contour, the material is separated along the contour during the anisotropic removal of material.
- the laser energy input serves to excite or trigger a reaction and a modification by conversion, the effect of which leads or is used only in the subsequent process step to the desired material separation.
- a subsequent anisotropic Materialabtrages done by an etching process no sequential, but a two-dimensional erosion process is used for the separation process, which only makes very low demands on the process. In particular, can be about the
- the separation surface is formed, the interface is not flat. Rather, a corrugation or a perforation, similar to a connected perforation.
- This basically unwanted uneven parting surface can be defined by the
- the two fundamental objectives of a rapid processing progress by large laser pulse intervals on the one hand and a smooth as possible, a planar course approximated course of the cut surface on the other hand contrary.
- the invention has for its object to provide a way to meet these two objectives in an optimal manner or to agree. This object is achieved by a method according to the features of claim 1.
- the further embodiment of the invention can be found in the dependent claims.
- machining parameters are determined according to the following rule:
- the roughness of the surface as a function of the pulse spacing typically has a local minimum of approximately 1 ⁇ to 3 ⁇ .
- Minimums depends on the substrate material, the etching chemistry used and other process parameters.
- an anisotropic material removal in the etching bath is made possible at the locations which have been modified by the laser radiation.
- structures with large aspect ratios can be produced with the condition
- the removal of material by the wet-chemical etching described by the product of etch rate R and etching time t, compared to the thickness D of the substrate is low.
- the substrate material used is preferably glass which is transparent to the wavelength used for the laser-induced deep etching. Particularly high aspect ratios and low roughness can be achieved with quartz glass.
- the invention allows for various embodiments. To further clarify its basic principle, one of them is shown in the drawing and will be described below. This shows in each case in a schematic representation in
- Fig. 3 is an illustration of a surface profile of a cut surface in a
- Fig. 4 shows the ratio of the laser pulse distance (d) and the roughness R a at different material abrasions.
- Figure 1 shows schematically how different ripples or roughnesses of
- Pulse distance d and the greater the etching time t is selected.
- FIG. 4 shows the dependence of the roughness R a (roughness) on the laser pulse distance d (pitch) for different material removal (etch removal).
- a laser pulse distance d of about 2 to 3 ⁇ a local minimum roughness R a of about 0.05 to 0.08 ⁇ is achieved. This is only slightly influenced by material removal, the product of etch rate and etching time.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Plasma & Fusion (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Geochemistry & Mineralogy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Laser Beam Processing (AREA)
- Surface Treatment Of Glass (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102017110542 | 2017-05-15 | ||
PCT/EP2018/058882 WO2018210484A1 (de) | 2017-05-15 | 2018-04-06 | Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen |
Publications (1)
Publication Number | Publication Date |
---|---|
EP3624982A1 true EP3624982A1 (de) | 2020-03-25 |
Family
ID=61972103
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18717553.4A Pending EP3624982A1 (de) | 2017-05-15 | 2018-04-06 | Verfahren zur bearbeitung, insbesondere zum trennen eines substrates mittels laserinduziertem tiefenätzen |
Country Status (6)
Country | Link |
---|---|
US (1) | US11065716B2 (de) |
EP (1) | EP3624982A1 (de) |
JP (2) | JP7396899B2 (de) |
KR (1) | KR102260931B1 (de) |
CN (1) | CN110545948B (de) |
WO (1) | WO2018210484A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2756175C1 (ru) * | 2020-03-30 | 2021-09-28 | Акционерное Общество "Государственный Научный Центр Российской Федерации Троицкий Институт Инновационных И Термоядерных Исследований" | Роботизированный лазерный комплекс и способ демонтажа металлоконструкций аэс |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102020114195A1 (de) * | 2020-05-27 | 2021-12-02 | Lpkf Laser & Electronics Aktiengesellschaft | Verfahren zum Einbringen einer Ausnehmung in ein Substrat |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05185270A (ja) * | 1992-01-16 | 1993-07-27 | Kosaka Kenkyusho:Kk | ガラスパネルの割断方法 |
JP3691221B2 (ja) * | 1997-09-24 | 2005-09-07 | 三菱電機株式会社 | レーザ加工方法 |
US6709881B2 (en) * | 2000-11-28 | 2004-03-23 | Matsushita Electric Industrial Co., Ltd. | Method for manufacturing semiconductor and method for manufacturing semiconductor device |
GB0315947D0 (en) * | 2003-07-08 | 2003-08-13 | Spectrum Technologies Plc | Laser removal of layer or coating from a substrate |
JP4672689B2 (ja) * | 2006-02-22 | 2011-04-20 | 日本板硝子株式会社 | レーザを用いたガラスの加工方法および加工装置 |
US8703517B2 (en) * | 2010-10-29 | 2014-04-22 | Denso Corporation | Method of Manufacturing a Semiconductor Device Including Removing a Reformed Layer |
WO2013045973A1 (en) * | 2011-09-27 | 2013-04-04 | Chipworks, Incorporated | A method to differential p-channel or n-channel devices based on different etching rates. |
KR101857335B1 (ko) * | 2013-04-04 | 2018-05-11 | 엘피케이에프 레이저 앤드 일렉트로닉스 악티엔게젤샤프트 | 기판 안으로 관통 개구부들을 도입하기 위한 방법 및 장치, 그리고 이렇게 제조된 기판 |
CN103264227B (zh) * | 2013-04-11 | 2015-05-13 | 温州大学 | 一种激光直接刻蚀聚合物基体表面覆盖金属膜的方法 |
CN103252262A (zh) * | 2013-04-15 | 2013-08-21 | 中国人民解放军军事医学科学院卫生学环境医学研究所 | 一种聚甲基丙烯酸甲酯材料微流控芯片加工技术方法 |
CN105592994B (zh) * | 2013-08-07 | 2018-10-12 | 通快激光与***工程有限公司 | 用于加工板状工件的方法和装置及由这类工件制成的产品 |
US10293436B2 (en) * | 2013-12-17 | 2019-05-21 | Corning Incorporated | Method for rapid laser drilling of holes in glass and products made therefrom |
US20150243559A1 (en) * | 2014-02-27 | 2015-08-27 | Jungrae Park | Hybrid wafer dicing approach using temporally-controlled laser scribing process and plasma etch |
JP6383977B2 (ja) * | 2014-06-27 | 2018-09-05 | Agc株式会社 | ガラス基板の切断方法 |
US10060673B2 (en) | 2014-07-02 | 2018-08-28 | Praxair Technology, Inc. | Argon condensation system and method |
CN208586209U (zh) * | 2014-07-14 | 2019-03-08 | 康宁股份有限公司 | 一种用于在工件中形成限定轮廓的多个缺陷的*** |
JP2017530867A (ja) * | 2014-07-14 | 2017-10-19 | コーニング インコーポレイテッド | 長さおよび直径の調節可能なレーザビーム焦線を用いて透明材料を加工するためのシステムおよび方法 |
US20180340262A1 (en) | 2015-08-31 | 2018-11-29 | Nippon Sheet Glass Company, Limited | Method for producing glass with fine structure |
TW201831414A (zh) * | 2016-12-13 | 2018-09-01 | 美商康寧公司 | 藉由形成劃痕線來雷射處理透明工件的方法 |
-
2018
- 2018-04-06 US US16/613,444 patent/US11065716B2/en active Active
- 2018-04-06 KR KR1020197031695A patent/KR102260931B1/ko active IP Right Grant
- 2018-04-06 CN CN201880025435.8A patent/CN110545948B/zh active Active
- 2018-04-06 WO PCT/EP2018/058882 patent/WO2018210484A1/de unknown
- 2018-04-06 JP JP2019558349A patent/JP7396899B2/ja active Active
- 2018-04-06 EP EP18717553.4A patent/EP3624982A1/de active Pending
-
2022
- 2022-05-24 JP JP2022084208A patent/JP2022116133A/ja active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2756175C1 (ru) * | 2020-03-30 | 2021-09-28 | Акционерное Общество "Государственный Научный Центр Российской Федерации Троицкий Институт Инновационных И Термоядерных Исследований" | Роботизированный лазерный комплекс и способ демонтажа металлоконструкций аэс |
Also Published As
Publication number | Publication date |
---|---|
US20200180068A1 (en) | 2020-06-11 |
JP7396899B2 (ja) | 2023-12-12 |
JP2022116133A (ja) | 2022-08-09 |
US11065716B2 (en) | 2021-07-20 |
KR20190132461A (ko) | 2019-11-27 |
WO2018210484A1 (de) | 2018-11-22 |
CN110545948B (zh) | 2022-02-25 |
JP2020517570A (ja) | 2020-06-18 |
KR102260931B1 (ko) | 2021-06-04 |
CN110545948A (zh) | 2019-12-06 |
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Owner name: LPKF LASER & ELECTRONICS SE |