EP3545332A2 - Module de balayage mems pour scanner lumineux - Google Patents

Module de balayage mems pour scanner lumineux

Info

Publication number
EP3545332A2
EP3545332A2 EP17808314.3A EP17808314A EP3545332A2 EP 3545332 A2 EP3545332 A2 EP 3545332A2 EP 17808314 A EP17808314 A EP 17808314A EP 3545332 A2 EP3545332 A2 EP 3545332A2
Authority
EP
European Patent Office
Prior art keywords
support
base
support element
mirror
mirror surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP17808314.3A
Other languages
German (de)
English (en)
Inventor
Florian Petit
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Blickfeld GmbH
Original Assignee
Blickfeld GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Blickfeld GmbH filed Critical Blickfeld GmbH
Publication of EP3545332A2 publication Critical patent/EP3545332A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
    • G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
    • G01S7/481—Constructional features, e.g. arrangements of optical elements
    • G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0018—Structures acting upon the moving or flexible element for transforming energy into mechanical movement or vice versa, i.e. actuators, sensors, generators
    • B81B3/0021—Transducers for transforming electrical into mechanical energy or vice versa
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G02B26/0858—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD the reflecting means being moved or deformed by piezoelectric means
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/10—Scanning systems
    • G02B26/105—Scanning systems with one or more pivoting mirrors or galvano-mirrors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
    • G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
    • G01S17/003—Bistatic lidar systems; Multistatic lidar systems

Definitions

  • the invention generally relates to a scanning module for a light scanner.
  • the invention relates to a scanning module having at least one elastic support member extending between a base and an interface member for fixing a mirror surface and having an extension perpendicular to the mirror surface which is not smaller than 0.7 mm. This allows resonant scanning.
  • BACKGROUND Distance measurement of objects is desirable in various fields of technology. For example, in the context of autonomous driving applications, it may be desirable to detect objects around vehicles and, in particular, to determine a distance to the objects.
  • One technique for measuring the distance of objects is the so-called LIDAR technology (light detection and ranging, sometimes also LADAR).
  • LIDAR technology light detection and ranging, sometimes also LADAR.
  • pulsed laser light is emitted by an emitter.
  • the objects in the environment reflect the laser light. These reflections can then be measured.
  • determining the transit time of the laser light a distance to the objects can be determined.
  • MEMS Microelectromechanical
  • a mirror is typically connected to a substrate via lateral spring elements.
  • the mirror and the spring elements are manufactured in one piece or integrated with the substrate.
  • the mirror is released from a wafer by suitable etching processes.
  • the scan angle is often comparatively limited and is, for example, of the order of magnitude from 20 ° - 60 °.
  • the usable mirror surface is often limited; typical mirrors can have a side length of 1 mm - 3 mm. Therefore, with LIDAR techniques, the detector aperture may be limited; This ensures that only comparatively close objects can be reliably measured.
  • a scan module for a light scanner includes a base and an interface element.
  • the interface element is arranged to fix a mirror surface.
  • the scan module also includes at least one elastic support member extending between the base and the interface member and having an extension perpendicular to the mirror surface that is not less than 0.7 mm.
  • the base, the interface element and the at least one support element are integrally formed. Because the at least one support element is elastic, it may also be referred to as a spring element. As a result, at least one degree of freedom of movement of the at least one support element can be excited resonantly. This corresponds to the resonant operation of the light scanner (English, resonant scanner).
  • the at least one support element has an extension perpendicular to the base that is not smaller than 1 mm, optionally not smaller than 3.5 mm, further optional not smaller than 7 mm. Because the at least one support element has a significant extent perpendicular to the mirror surface, it can be called a vertically oriented support element, unlike the lateral spring elements in the prior art. By means of such an arrangement, particularly large scan angles can be generated, for example in the range of 120 ° -180 °.
  • the scan module it would be possible for the scan module to have at least two support elements.
  • the scanning module could comprise at least three support elements, optionally at least four support elements. This makes it possible to generate particularly robust and less susceptible to vibration scan modules.
  • the longitudinal axes of the at least two support elements in each case include pairs of angles which are not greater than 45 °, optionally not greater than 10 °, further optionally not greater than 1 °.
  • the at least two support elements can be arranged parallel or substantially parallel to each other.
  • the at least two support elements could have an arrangement with rotational symmetry with respect to a central axis. It would be possible for the rotational symmetry to be n-counted, where n denotes the number of at least two support elements. This makes it possible to avoid non-linear effects during resonant operation of the light scanner.
  • At least one degree of freedom of movement of the at least one support element can be excited.
  • the at least one degree of freedom of the movement could comprise a transverse mode and a torsional mode, wherein the natural frequency of the lowest transverse mode is greater than the natural frequency of the lowest torsional mode.
  • the at least one degree of freedom of movement could comprise a transverse mode and a torsional mode, wherein the lowest transverse mode is degenerate with the lowest torsional mode. This can be achieved that the scan module is particularly robust against external stimuli.
  • the torsional mode may correspond to a twist of the at least two support elements.
  • the torsional mode may denote a twist of each individual support element along the respective longitudinal axis.
  • the torsional mode may also designate a twist of several support elements into one another.
  • the distance between two adjacent support elements of the at least two support elements can be in the range of 2% to 50% of the length of at least one of the at least two support elements, optionally in the range of 10% to 40%, further optionally in the range of 12. 20%. This can allow a compact design and an adapted frequency of the torsional mode.
  • the at least two support elements have lengths that do not deviate from each other by more than 10%, optionally not more than 2%, further optionally not more than 0.1%.
  • the scan module may have a balance weight.
  • the balance weight may be attached to at least one of the at least one interface element.
  • the balancing weight can in particular be formed integrally with the at least one interface element.
  • the balancing weight can be implemented by a change in the cross-sectional area along the longitudinal axis of the at least one interface element.
  • the balance weight can be used to change the mass moment of inertia.
  • the frequency of the torsional mode of the at least one interface element can be adapted to the frequency of the transverse modes of the at least one interface element.
  • the scanning module includes a first bending piezoactuator, a second bending piezoactuator, and the base disposed between the first bending piezoactuator and the second bending piezoactuator.
  • the Biegepiezoaktuatoren could thus stimulate the at least one support element coupled via the base.
  • the first Biegepiezoaktuator could have an elongated shape along a first longitudinal axis and the second Biegepiezoaktuator could have an elongated shape along a second longitudinal axis.
  • the first longitudinal axis and the second longitudinal axis could include an angle smaller than 20 °, optionally less than 10 °, further optionally less than 1 °.
  • the first longitudinal axis and / or the second longitudinal axis could include an angle with a longitudinal axis of the at least one support member that is less than 20 °, optionally less than 10 °, further optionally less than 1 °.
  • the base could have a longitudinal extent along a first longitudinal axis of the first bending piezoactuator that is in the range of 2 to 20% of the length of the first bending piezoactuator along the first longitudinal axis, optionally in the range of 5 to 15%. In this way, particularly large scan angles can be achieved and efficient excitation of different degrees of freedom of movement of the at least one support element.
  • the base could have a longitudinal extent along a second longitudinal axis of the second bending piezoactuator that is in the range of 2 to 20% of the length of the second bending piezoactuator along the second longitudinal axis, optionally in the range of 5 to 15%. It can thereby be achieved that the bending piezoactuator can apply a sufficiently large force to the base for the efficient excitation of different degrees of freedom of the movement of the at least one support element.
  • the first bending piezoactuator could have an elongated shape along a first longitudinal axis.
  • the second bending piezoactuator could also have an elongated shape along a second longitudinal axis.
  • the first bending piezoactuator could extend along the first longitudinal axis and the second bending piezoactuator could extend along the second longitudinal axis along a longitudinal axis of the at least one support member to a freely movable end of the at least one support member.
  • the device could also include a driver configured to drive the first bending piezoactuator with a first waveform and to drive the second bending piezoactuator with a second waveform.
  • the first signal form and the second signal form could have antiphase signal contributions.
  • the second signal form could have in-phase further signal contributions, which are optionally amplitude-modulated.
  • the amplitude of the in-phase signal contributions during the time period could be the scanning of the Scanning range is needed (correlated with the refresh rate), monotonically increase or decrease.
  • a linear time dependence of the envelope would be possible.
  • the signal contributions could have a first frequency, the further signal contributions having a second frequency, the first frequency being in the range of 95-105% of the second frequency or being in the range of 45-55% of the second frequency.
  • first signal form and / or the second signal form prefferably have a DC component.
  • One method involves defining an etch mask by lithography on a wafer.
  • the method also includes etching the wafer using the etch mask to obtain at least one etched structure that forms a scan module.
  • the method further comprises fixing a mirror surface mirror to an interface element of the scan module.
  • the method may be used to fabricate a scanning module according to various examples described herein. Because the scan module is made from a wafer, such as a silicon wafer or silicon on insulator (SOI) wafer, such techniques may also be referred to as MEMS techniques.
  • a wafer such as a silicon wafer or silicon on insulator (SOI) wafer
  • SOI silicon on insulator
  • Fixing the mirror to the interface element may include at least one of the following techniques: bonding; anodic bonding; Direct bonding; eutectic bonding; Thermo-compression bonding; adhesive bonding.
  • the method could further include connecting a plurality of etched structures forming the scan module prior to fixing the mirror.
  • Appropriate techniques may be used to join the etched structures described above in connection with fixing the mirror, i.e.: gluing; anodic bonding; Direct bonding; eutectic bonding; Thermo-compression bonding; adhesive bonding.
  • a large number of structures can be defined per wafer, so that a multiplicity of scanning modules can be obtained per wafer.
  • a parallel processing At wafer level, this allows the individual handling of individual scan modules to be avoided. At a certain point of the processing, it is possible to crop individual structures, for example by cutting or sawing the wafer. Then, processing can be carried out at the scan module level.
  • the interconnection of the multiple etched structures forming the scan module it would be performed at wafer level, ie, before clipping individual scan modules.
  • the interconnection of the several etched structures to be carried out at the scan module level - ie after the individual scan module has been blanked out.
  • Each of the plurality of etched structures may include a base, an interface member, and at least one support member extending between the respective base and the respective interface member. Then, the joining of the plurality of etched structures to the bases and the interface elements of the plurality of etched structures may occur.
  • connection can be made directly or via spacers.
  • a scanning module for a resonantly operated light scanner comprises a mirror.
  • the mirror has a mirror surface.
  • the mirror also has a back side.
  • the back is opposite the mirror surface.
  • the scan module also includes at least one resilient support member extending away from the backside.
  • the at least one elastic support element is manufactured by means of MEMS techniques.
  • the at least one elastic support element is produced by wafer etching and lithography from a silicon or SOI wafer. This may mean, for example, that the at least one elastic support element is formed of monocrystalline material and thus can tolerate particularly large tensions.
  • FIG. 1A schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1A has two mutually parallel support elements, and a non-integrally formed mirror.
  • FIG. 1 B schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1 B has two mutually parallel support elements, and an integrally formed mirror.
  • FIG. 1C schematically illustrates a scan module for a light scanner according to various examples, wherein the scan module in the example of FIG. 1 C has two mutually parallel support elements, and a mirror surface, which is applied to an interface element of the scanning module.
  • FIG. 2 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module has two support elements arranged parallel to one another, as well as a non-integrally formed mirror, which is tilted with respect to the longitudinal axis of the support elements.
  • FIG. 3 is a schematic perspective view of a scanning module according to various examples, including a base, an interface element, and two support members extending between the base and the interface element.
  • FIG. 4 is a schematic perspective view of a scanning module according to various examples, including a base, an interface element, and two support members extending between the base and the interface element, the base having two edge portions adapted to be connected to piezoactuators.
  • FIG. 5A is a schematic plan view of a scan module according to various examples, wherein the base is connected to two bending piezoactuators.
  • FIG. 5B is a schematic plan view of a scan module according to various examples, wherein the base is connected to two bending piezoactuators.
  • FIG. 6A is a schematic side view of bending piezoactuators according to various examples.
  • FIG. 6B is a schematic plan view of a scan module according to various examples wherein the base is connected to two bending piezoactuators.
  • FIG. 7 schematically illustrates a light scanner according to various examples.
  • FIG. 8 schematically illustrates antiphase waveforms that may be used to operate bending piezoactuators according to various examples.
  • FIG. 9 schematically illustrates in-phase waveforms that may be used to operate bending piezoactuators according to various examples.
  • FIG. FIG. 10 schematically illustrates DC phase anti-phase waveforms that may be used to drive bending piezoactuators according to various examples.
  • FIG. FIG. 1 illustrates schematically dc-mode in-phase waveforms that may be used to drive bending piezoactuators according to various examples.
  • FIG. 12 schematically illustrates amplitude modulation of in-phase waveforms as a function of time according to various examples.
  • FIG. 13 schematically illustrates a superimposition figure for two degrees of freedom of movement of at least one support element and a scan area defined by the overlay figure according to various examples.
  • FIG. 14 illustrates a spectrum of the excitation of at least one support element
  • FIG. 14 illustrates a degeneracy between a torsional mode and a transverse mode according to various examples.
  • FIG. FIG. 15 illustrates a spectrum of the excitation of at least one support element, FIG.
  • FIG. 15 illustrates a degenerate degeneracy between a torsional mode and a transverse mode according to various examples.
  • FIG. 16 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module in the example of FIG. 15 has two mutually parallel support elements with respective balancing weight.
  • FIG. 17 is a perspective view of a scan module for a light scanner according to various examples, wherein the scan module has two pairs of support members in different planes.
  • FIG. 18 schematically illustrates a torsional mode for the scan module according to the example of FIG. 17th
  • FIGs. 19 and 20 schematically illustrate a transverse mode of a scanning module having a single support member according to various examples.
  • FIGs. 21 and 22 schematically illustrate a transverse mode of a scanning module having two parallel support members according to various examples.
  • FIG. FIG. 23 schematically illustrates a scanning module for a light scanner according to various examples, wherein the scanning module in the example of FIG. 23 has two mutually parallel support elements with respective piezo material.
  • FIG. 24 is a flowchart of an exemplary method of manufacturing a scan module.
  • FIG. 25 schematically illustrates the fabrication of a scan module according to various examples.
  • FIG. FIG. 26 is a sectional view of the scanning module of FIG. 25th
  • Scanning may refer to repeated emission of the light at different angles of radiation.
  • the light can be deflected by a deflection unit.
  • the scanning may indicate the repeated scanning of different points in the environment by means of the light.
  • the amount of different points in the environment and / or the amount of different radiation angles may define a scan area.
  • the scanning of light by the temporal superposition and optionally a local superimposition of two resonant-driven movements corresponding to different degrees of freedom at least one movable support element can take place.
  • a superposition figure can be traversed in various examples.
  • the overlay figure is also referred to as a Lissajous figure.
  • the overlay figure can describe a sequence with which different radiation angles are converted by the movement of the support element.
  • laser light it is possible to scan laser light.
  • coherent or incoherent laser light can be used.
  • polarized or unpolarized laser light it would be possible for the laser light to be pulsed.
  • short laser pulses with pulse widths in the range of femtoseconds or picoseconds or nanoseconds can be used.
  • a pulse duration can be in the range of 0.5-3 nanoseconds.
  • the laser light may have a wavelength in the range of 700-1800 nm.
  • broadband light sources or RGB light sources RGB light sources herein generally refer to light sources in the visible spectrum, wherein the color space is covered by superposition of several different colors - for example, red, green, blue or cyan, magenta, yellow, black.
  • At least one support element will be used to scan light having a shape and / or material induced elasticity. Therefore, the at least one support element could also be referred to as a spring element. Then at least one degree of freedom of movement of the at least one support element can be excited, for example a torsional mode and / or a transverse mode. That There is a resonant excitation of the corresponding mode. Thereby, a mirror, which is connected to a movable end of the at least one support element, are moved. Therefore, the movable end of the at least one support element defines an interface element. This allows light to be scanned. For example, it would be possible to use more than a single support element, e.g. two or three or four support elements. These may optionally be arranged symmetrically with respect to each other.
  • the movable end could be moved in one or two dimensions.
  • One or more actuators can be used for this purpose.
  • the movable end is tilted relative to a fixing of the at least one support element; this results in a curvature of the at least one support element.
  • This may correspond to a first degree of freedom of the movement; this can be referred to as transversal mode (or sometimes as wiggle mode).
  • the movable end it would be possible for the movable end to be rotated along a longitudinal axis of the support element (torsion mode). This may correspond to a second degree of freedom of movement.
  • a deflection unit such as a mirror may be provided.
  • This allows an environment to be scanned with the laser light.
  • scan areas of different sizes can be implemented.
  • the deflection unit can be implemented as a prism or mirror.
  • the mirror could be through a wafer, such as a silicon wafer, or a Be implemented glass substrate.
  • the mirror could have a thickness in the range of 0.05 ⁇ - 0, 1 mm.
  • the mirror could have a thickness of 25 ⁇ or 50 ⁇ .
  • the mirror could have a thickness in the range of 25 ⁇ to 75 ⁇ .
  • the mirror could be square, rectangular or circular.
  • the mirror could have a diameter of 3 mm to 12 mm, or in particular 8 mm.
  • LIDAR techniques can be used.
  • the LIDAR techniques can be used to perform a spatially resolved distance measurement of objects in the environment.
  • the LIDAR technique may include transit time measurements of the laser light between the mirror, the object, and a detector.
  • LIDAR techniques can be used to scan light in a wide variety of applications. Examples include endoscopes and RGB projectors and printers.
  • LIDAR techniques can be used.
  • the LIDAR techniques can be used to perform a spatially resolved distance measurement of objects in the environment.
  • the LIDAR technique may include transit time measurements of the laser light.
  • Various examples are based on the finding that it may be desirable to carry out the scanning of the laser light with a high accuracy with respect to the emission angle.
  • spatial resolution of the distance measurement may be limited by inaccuracy of the emission angle.
  • a higher (lower) spatial resolution is achieved the more accurate (less accurate) the radiation angle of the laser light can be determined.
  • a scan module which comprises a support element.
  • the support element is integrally formed with a base and an interface element which is adapted to fix the mirror surface.
  • integrally forming can be achieved that a particularly large power flow can be transmitted through the base to the support member.
  • one or more degrees of freedom of movement of the support element can be excited particularly efficiently.
  • the support element with a movement performs a particularly large amplitude.
  • This allows large scan angles to be implemented.
  • an adhesive or other connecting means - which would have to be used in the non-integral training - tears or yields and thus the scan module is damaged.
  • the scan module could be made by etching techniques from a wafer.
  • the wafer may e.g. 500 ⁇ be thick.
  • techniques of wet chemical etching or dry etching could be used, for example, reactive ion etching (RIE), e.g. dry RIE (engl., dry RIE, DRIE).
  • RIE reactive ion etching
  • the wafer may be, for example, a silicon wafer or a silicon on insulator (SOI) wafer.
  • SOI silicon on insulator
  • the insulator could be arranged about 100 ⁇ below a surface of the wafer.
  • the insulator may act as an etch stop, for example.
  • the support element has an extension perpendicular to the mirror surface which is not smaller than 0.7 mm. Therefore, compared to conventional MEMS-based micromirrors, the support element does not extend only in the plane of the mirror surface, but also has a significant extension vertical to the mirror surface.
  • the support element could be rod-shaped along a longitudinal axis, wherein the longitudinal axis has a component perpendicular to the mirror surface.
  • the support member could have local variations in cross-sectional area to implement a balance weight.
  • FIG. 1A illustrates aspects relating to a scan module 100.
  • the scan module 100 includes a base 141, two support members 101, 102, and an interface member 142.
  • the base 141, support members 101, 102, and interface member 142 are integral educated.
  • the support members 101, 102 are formed in a plane (drawing plane of FIG. 1A).
  • the support elements 101, 102 are straight, ie have no curvature and no kink at rest.
  • the base 141, the support members 101, 102, and the interface member 142 may be obtained by MEMS processes by etching a silicon wafer (or other semiconductor substrate).
  • the base 141, the support elements 101, 102, as well as the interface element 142 may be formed in particular monocrystalline.
  • the distance between two adjacent support elements 101, 102 prefferably be in the range of 2% -50% of the length 21 1 of at least one of the at least two support elements, optionally in the range of 10% -40%, further optional in the range of 12 - 20%. It is possible that the at least two support members have lengths 211 that do not deviate from each other by more than 10%, optionally not more than 2%, further optionally not more than 0.1%. As a result, a particularly large amplitude of corresponding degrees of freedom of the movement can be achieved.
  • the longitudinal axes 11, 112 of the support elements 101, 102 it would be possible for the longitudinal axes 11, 112 of the support elements 101, 102 to enclose in pairs each other wrenches which are not greater than 45 °, optionally not greater than 10 °, further optionally not greater than 1 °.
  • the support elements 101, 102 have an arrangement with rotational symmetry with respect to a central axis 220. In the example of FIG. 1A is a twofold rotational symmetry. It would also be possible for the scan module 100 to have only a single support element or to have more than two support elements.
  • FIG. 1A also illustrates aspects relating to a laser scanner 99.
  • the laser scanner 99 includes the scan module 100 as well as a mirror 150.
  • the mirror 150 which has on the front side a mirror surface 151 with high reflectivity (for example greater than 95% at a wavelength of 950 ⁇ m, optional> 99%, further optional> 99.999%, eg aluminum or gold in a thickness of 80 ⁇ m). 250 nm) for light 180, not integrally formed with the base 141, the support elements 101, 102, and the interface element 142.
  • the mirror 150 could be glued to the interface element 142.
  • the interface member 142 may be configured to fix the mirror surface 151.
  • the interface element 142 for this purpose could have an abutment surface configured to to fix a corresponding contact surface of the mirror 150.
  • one or more of the following techniques could be used: gluing; Soldering.
  • gluing Between the interface element 142 and the mirror surface 151, a rear side 152 of the mirror 150 is arranged.
  • the interface element 142 is arranged on the rear side 152 of the mirror 150. From FIG. It can be seen that the support members extend away from the back 152 of the mirror 150 toward the base 141. This avoids space-consuming frame-like structures as in conventional MEMS approaches.
  • the mirror 150 can therefore be connected to the support elements 101, 102 via the interface element 142.
  • the support elements 101, 102 have an extension perpendicular to the mirror surface 151; this extension could be, for example, about 2 to 8 mm, in the example of FIG. 1A.
  • the support elements are in particular rod-shaped along corresponding longitudinal axes 11 1, 112 are formed.
  • the surface normal 155 of the mirror surface 151 is shown; the longitudinal axes 11 1, 12 are oriented parallel to the surface normal 155, ie they enclose an angle of 0 ° with this.
  • the extension of the support members 101, 102 perpendicular to the mirror surface 151 is equal to the length 211 of the support members 101, 102.
  • the length 21 1 of the support members 101, 102 is not shorter than 2 mm, optionally not shorter than 4 mm, further optional not shorter than 6 mm.
  • the length of the support members 101, 102 is not greater than 20 mm, optionally not greater than 12 mm, further optionally not greater than 7 mm. If multiple supports are used, they can all be the same length.
  • the extension of the support elements 101, 102 is shorter perpendicular to the mirror surface 151, as their length 211 (because only the projection parallel to Surface normal 155 is taken into account).
  • the extension of the support members 101, 102 perpendicular to the mirror surface 151 is not smaller than 0.7 mm. Such a value is larger than the typical thickness of a wafer from which the scan module 100 can be made. As a result, particularly large scanning angles for the light 180 can be implemented.
  • the support elements 101, 102 could, for example, have a rectangular cross-section.
  • the support elements 101, 102 could also have a square cross-section. But it would also other cross-sectional shapes, such as circular, triangular, etc., possible.
  • Typical side lengths of the cross section of the support elements 101, 102 may be in the range of 50 ⁇ to 200 ⁇ , optionally about 100 ⁇ amount.
  • the short side of the cross section generally could not be less than 50% of the long side of the cross section; this means that the support elements 101, 102 can not be formed as flat elements. In this way it can be ensured that the material in the region of the support elements 101, 102 can absorb sufficiently large stresses without being damaged.
  • a shape-induced elasticity of the material in the region of the support elements 101, 102 can assume sufficiently large values in order to enable a movement of the interface element 142 relative to the base 141.
  • a torsional mode and / or a transversal mode of the support members 101, 102 could be used to move the interface element 142 - and thus the mirror 150 -.
  • the scanning of light can be implemented (in FIG. 1A, the resting state of the support members 101, 102 is shown).
  • the scan module 102 includes support elements 101, 102 arranged in a plane (the plane of the drawing of FIG. 1A).
  • the scan module 100 can be implemented with a particularly high degree of robustness.
  • the voltage per support element 101, 102 can thereby be reduced.
  • FIG. 1B illustrates aspects relating to a scan module 100.
  • the scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142.
  • the base 141, the support elements 101, 102, and the interface element 142 are integrally formed.
  • the example of FIG. 1B basically corresponds to the example of FIG. 1A.
  • the mirror 150 is integrally formed with the interface element 142 or the support elements 101, 102 and the base 141.
  • a projection is provided over a central area of the interface element 142. As a result, it can be achieved that the force flow between the scan module 100 and the mirror 150 does not have to be transmitted via an adhesive.
  • FIG. 1C illustrates aspects relating to a scan module 100.
  • the scan module 100 includes a base 141, two support members 101, 102, and an interface member 142.
  • the base 141, the support members 101, 102, and the interface member 142 are integrally formed.
  • FIG. 1C basically corresponds to the example of FIG. 1 B.
  • mirror 150 and interface element 142 are implemented by one and the same element.
  • the mirror surface 151 is applied directly to the interface element 142. This allows a particularly simple structure.
  • FIG. 2 illustrates aspects relating to a scan module 100.
  • the scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142.
  • the base 141, the support elements 101, 102, and the interface element 142 are integrally formed.
  • the example of FIG. 2 basically corresponds to the example of FIG. 1A.
  • the longitudinal axes 1 1 1, 1 12 of the support members 101, 102 are not oriented perpendicular to the mirror surface 151.
  • the angle 159 between the surface normal 155 of the mirror surface 151 and the longitudinal axes 11, 12 is shown.
  • the angle 159 is in the example of FIG. 2 45 °, but could generally be in the range of -60 ° to + 60 °, or optionally in the optional range of -45 ° ⁇ 15 ° or in the range of + 45 ° ⁇ 15 °, i. be substantially 45 °
  • FIG. 2 shows a scenario in which a beam path of the light 180 runs parallel to the longitudinal axes 11 1-112 of the support elements 101, 102 and another beam path of the light 180 - after or before deflection through the mirror surface 151- perpendicular to the longitudinal axes 11 -112 runs.
  • the optical path of the light 180 may be parallel to the central axis 220
  • Such tilting of the mirror surface 151 with respect to the longitudinal axes 1111, 112 may be particularly advantageous if the torsional mode of the support elements 101, 102 is used to move the mirror 150.
  • periscope-like scanning of the light 180 may be implemented.
  • the periscope-like scanning by means of the torsional mode has the advantage that - if the mirror 150 is also used as a detector aperture - the size of the detector aperture has no dependence on the scanning angle; namely, the angle between incident light and mirror 150 is not dependent on the scanning angle. This is different from reference implementations in which, by tilting the mirror, the size of the detector aperture-and thus the sensitivity of the measurement-varies as a function of the scan angle.
  • FIG. 3 illustrates aspects relating to a scan module 100.
  • the scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142.
  • the base 141, the support elements 101, 102, and the interface element 142 are integrally formed.
  • FIG. 3 is a perspective view of the scan module 100.
  • FIG. 3 illustrates how a direction 1901 of the front etch and a direction 1902 of the backside etch are oriented.
  • scan module 100 could be fabricated by suitably two-step etching of an SOI wafer along directions 1901, 1902.
  • the interfaces between insulator and silicon could define the support elements 101, 102.
  • the wafer surface could be oriented perpendicular to the directions 1901, 1902. From a comparison of FIGs. 1A, 1 B, 1 C, 2 with FIG. 3 it follows that the mirror surface 151 is not oriented perpendicular to the wafer surface. As a result, particularly large lengths 211 of the at least one support element 101, 102 can be made possible. This in turn allows for large scan angles.
  • the thickness 1998 of the base 141 and the interface member 142 is different from the thickness 1999 of the support members 101, 102.
  • the base 141, the interface member 142, and the support members 101, 102 it would be possible for the base 141, the interface member 142, and the support members 101, 102 to have the same thickness. This is related to the thicknesses 1998, 1999 in the etching direction of the MEMS structuring, ie perpendicular to a wafer normal with respect to the Front-side structuring and backside structuring according to directions 1901, 1902.
  • the wafer normal typically correlates with a particular crystal direction.
  • FIG. 4 illustrates aspects relating to a scan module 100.
  • the scan module 100 comprises a base 141, two support elements 101, 102, and an interface element 142.
  • the base 141, the support elements 101, 102, and the interface element 142 are integrally formed.
  • FIG. 4 is a perspective view of the scanning module 100.
  • the example of FIG. 4 basically corresponds to the example of FIG. 3.
  • the base 141 comprises a central region 145 and two edge regions 146 arranged on different sides of the central region 145.
  • the support elements 101, 102 are connected to the central region 145.
  • the central region 145, as well as the edge regions 146 are all formed in one piece.
  • the edge regions 146 in the example of FIG. For example, the thickness of the edge regions 146 could not be greater than 30% of the thickness of the central region 145.
  • the reduced thickness of the edge regions 146 can be made to have greater shape-induced elasticity than the central region 145. In general, other measures could be taken to make the edge regions 146 have greater shape-induced elasticity than the central region 145. For example, depressions or trenches could be provided which provide the elasticity.
  • the edge regions 146 can be used to connect to piezoactuators.
  • the central region 145 establishes the connection with the support elements 101, 102.
  • FIG. 5A illustrates aspects with respect to a laser scanner 99.
  • the laser scanner 99 includes the scan module 100, which could be configured, for example, according to the various other examples described herein (however, FIG. 5A exemplifies a scan module 100 having only a single support member 101). ,
  • FIG. 5A illustrates particular aspects with respect to piezoactuators 310, 320.
  • bending piezoactuators 310, 320 may be used to excite the support member 101.
  • a first and a second bending piezoactuator may be used. It would be possible for the first bending piezoactuator and / or the second bending piezoactuator to be plate-shaped.
  • a thickness of the Biegepiezoaktuatoren eg in the range of 200 ⁇ - 1 mm are, optionally in the range of 300 ⁇ - 700 ⁇ .
  • first bending piezoactuator and / or the second bending piezoactuator can have a layer structure comprising an alternating arrangement of a plurality of piezoelectric materials. These can have a different strength piezoelectric effect. As a result, a bending can be effected, similar to a bimetallic strip with temperature changes.
  • first bending piezoactuator and / or the second bending piezoactuator to be fixed at a fixing point: an end opposite the fixing point can then be moved on account of a bending or curvature of the first bending piezoactuator and / or the second bending piezoactuator.
  • Biegepiezoaktuatoren a particularly efficient and strong excitation can be achieved.
  • the bending piezoactuators can move the base 141 and, in particular, tilt - for exciting a torsional mode of the at least one support element.
  • the piezoactuators 310, 320 are designed as bending piezoactuators. This means that the application of a voltage to electrical contacts of the bending piezoactuators 310, 320 causes a bending or bending of the bending piezoactuators 310, 320 along their longitudinal axes 319, 329.
  • the bending piezoactuators 310, 320 have a layer structure (not illustrated in FIG. 5A and oriented perpendicular to the plane of the drawing).
  • one end 315, 325 of the bending piezoactuators 310, 320 are deflected perpendicular to the respective longitudinal axis 319, 329 relative to a fixing point 311, 321 (the deflection is oriented perpendicular to the plane of the drawing in the example of FIG.
  • the deflection 399 of the bending piezoactuators 310, 320 due to the bending is shown in FIG. 6A.
  • FIG. 6A is a side view of the bending piezoactuators 310, 320.
  • FIG. 6A shows the bending piezoactuators 310, 320 in a rest position, for example without a driver signal or tension / curvature.
  • the fixation location in 31 1, 321 could establish a rigid connection between the bending piezoactuators 310, 320 and a housing of the laser scanner 99 (not shown in FIG. 5A).
  • the base 141 could have a longitudinal extent of the longitudinal axes 319, 329 that is in the range of 2 to 20% of the length of the bending piezoactuators 310, 320 along the longitudinal axes 319, 329, optionally in the range of 5 to 15%. As a result, sufficient excitation can be achieved; the base 141 dampens the movement of the bending piezoactuators 310, 320 only comparatively weakly.
  • the bending piezoactuators 310, 320 are arranged substantially parallel to each other. It would also tilting of the longitudinal axes 319, 329 to each other possible, especially as long as they are in a plane. From the example of FIG. 5A, it can be seen that the connection of the bending piezoactuators 310, 320 with the support element 101 is implemented via the edge regions 146 of the base 141. Because these marginal regions 146 have elasticity, the flexure 399 can be received and results in deflection of the base 141. This allows one or more degrees of freedom of movement of the interface element 101 coupled via the base 141 to be excited. This results in a particularly efficient and space-saving excitation.
  • the bending piezoactuators 310, 320 extend away from the interface element 142. However, it is also possible that the bending piezoactuators 310, 320 extend along at least 50% of their length toward the interface element 142. As a result, a particularly compact arrangement can be achieved. This is in FIG. 5B.
  • FIG. 5B illustrates aspects related to a laser scanner 99.
  • the laser scanner 99 includes the scan module 100, which could be configured according to the various other examples described herein (however, a scan module 100 having only a single support member 101 is shown in FIG. 5B).
  • FIG. 5B basically corresponds to the example of FIG. 5A.
  • the bending piezoactuators 310, 320 extend toward the interface element 142 or toward a freely movable end of the at least one support element 101.
  • a particularly compact construction of the light scanner 99 can be achieved.
  • FIGs. 5A, 5B, 6A that upon excitation via the edge regions 146, a coupled excitation of the plurality of support elements 101, 102 takes place.
  • a Biegepiezoaktuator stimulates all support members 101, 102 together via a guided through the base 141 power flow.
  • the longitudinal axes 319, 329 are aligned parallel to the longitudinal axis of the support member 101, it would also be possible in other examples that the longitudinal axes 319, 329 of the Biegepiezoaktuatoren are arranged perpendicular to the longitudinal axis of the support member 101. This is in FIG. 6B.
  • the longitudinal axes 319, 329 could enclose an angle of 90 ° ⁇ 20 ° with the longitudinal axis of the at least one support member, optionally of 90 ° ⁇ 5 °, more optionally of 90 ° ⁇ 1 °.
  • FIG. 7 illustrates aspects relating to a laser scanner 99.
  • the laser scanner 99 includes a control unit 4001 that could be implemented, for example, as a microprocessor or application specific integrated circuit (ASIC).
  • the controller 4001 could also be implemented as a Field Programmable Array (FPGA).
  • the control unit 4001 is configured to output control signals to a driver 4002.
  • the control signals could be output in digital or analog form.
  • the driver 4002 is in turn configured to generate one or more voltage signals, and these to corresponding electrical contacts of the piezoactuators 310, 320 issue. Typical amplitudes of the voltage signals are in the range of 50 V to 250 V.
  • the piezoactuators 310, 320 are in turn coupled to the scan module 100, such as the above reference to FIGS. 5 and 6 described.
  • the scan module 100 such as the above reference to FIGS. 5 and 6 described.
  • one or more degrees of freedom of the movement of the scanning module 100 in particular of one or more supporting elements 101, 102 of the scanning module 100, can be excited.
  • the mirror surface 151 is deflected.
  • the surrounding area of the laser scanner 99 can be scanned with light 180.
  • FIG. 8 illustrates aspects related to waveforms 800 that may be used to drive the piezoactuators 310, 320 according to various examples described herein.
  • the waveforms 800 could be output from the driver 4002.
  • FIG. 8 particularly illustrates the waveform of the amplitude of the waveforms 800 as a function of time.
  • a signal contribution 81 1 (solid line) is shown which is used to drive the bending piezoactuators 310.
  • a signal contribution 821 (dashed line) that is used to drive the bending piezoactuators 320.
  • the signal contributions 81 1, 821 are configured in antiphase.
  • the signal contributions 811, 821 have the same frequency, as well as a phase shift of 180 °.
  • FIG. 9 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 according to various examples described herein.
  • FIG. 9 specifically illustrates the waveform of the amplitude of the waveforms 800 as a function of time.
  • a signal contribution 812 (solid line), which is used to drive the bending piezoactuators 310, is shown.
  • a signal contribution 822 (dashed line) that is used to drive the bending piezoactuators 320.
  • the signal contributions 812, 822 are configured in phase. This means the example of FIG. 9 that the signal contributions 812, 822 have the same frequency, and a phase offset of 0 °.
  • the in-phase signal contributions 812, 822 it can be achieved that the bending piezoactuator 310 curves upwards (curves downward or downward), while the bending piezoactuator 320 bends upward (moves downward or moves). , This in turn can be achieved that the base 141 is alternately moved up and down (with respect to the central axis 220). Therefore, with such a configuration of the waveforms 800, a particularly efficient excitation of transverse modes of the support element or the support elements 101, 102 can take place. In some examples, it would be possible for the signal contributions 811, 821 to be temporally superimposed with the signal contributions in 812, 822. This may be desirable in particular if only a single support element is used.
  • a temporal and spatial superimposition of a torsional mode and a transverse mode of the at least one support element can be obtained. It can thereby be achieved that a two-dimensional scan area is scanned, with the light being deflected at the individual mirror surface. This can achieve a particularly space-saving integration of the laser scanner 99.
  • the antiphase signal contributions 81 1, 821 or else the in-phase signal contributions 812, 822 may be applied. This may be desirable in particular if more than one single support element is used. Then either the torsional mode or the transverse mode of the at least one support element can be excited. As a result, by deflecting the mirror surface, a one-dimensional scan area can be scanned. In order to nevertheless scan a two-dimensional scan area, it would be possible, for example, for two laser scanners to deflect the light sequentially; The two laser scanners can be operated synchronized. In the following, however, reference will be made primarily to scenarios in which a temporal and spatial superposition of different degrees of freedom of movement of the at least one support element is used to scan a two-dimensional scan area.
  • a typical frequency of the signal contributions 81 1, 812, 821, 822 is, for example, in the range of 50 Hz to 1.5 kHz, optionally in the range of 200 Hz to 1 kHz, further optionally in the range of 500 Hz to 700 Hz adequate scanning frequencies are achieved.
  • FIGS. 8 and 9 illustrate scenarios in which the antiphase signal contributions 81 1, 821 for exciting the bending piezoactuators 310, 320 have approximately the same frequency as the in-phase signal contributions 812, 822.
  • the antiphase signal contributions 811, 821 a first frequency in the range 95-105% of a second frequency of the in-phase signal contributions 812, 822 have.
  • a particularly efficient superposition figure of the various degrees of freedom of the movement of the at least one support element 101, 102 can be achieved.
  • a high refresh rate can be achieved without certain areas of the scan area being scanned multiple times by nodes in the overlay figure.
  • such implementations of the frequencies of the waveforms 800 may exploit a degeneracy of the various excited degrees of freedom of movement of the at least one support element 101, 102 in the frequency domain.
  • the antiphase signal contributions 811, 821 could have a different first frequency than the second frequency of the in-phase signal contributions 812, 822.
  • the first frequency of the antiphase signal contributions 81 1, 821 could be in the range of 45 °. 55% of the second frequency of in-phase Signal contributions 812, 822 are, ie amount to about half of the second frequency.
  • the first frequency could also be about twice the second frequency and take a completely different value.
  • the signal forms 800 on the bending piezoactuator 810 have a specific phase shift relative to the signal forms 800 on the bending piezoactuator 820.
  • This phase shift can be varied, for example as a function of the relative amplitude of the in-phase signal contributions 81 1, 821 and opposite-phase signal contributions 812, 822 to one another.
  • the actual waveforms 800 may be decomposed into the in-phase signal contributions 81 1, 821 and the anti-phase signal contributions 812, 822.
  • a driver used to generate the waveforms 800 may already have the superposition of the in-phase signal contributions 81 1, 821 with the generate antiphase signal contributions 812, 822.
  • FIG. 10 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 in accordance with various examples described herein.
  • FIG. 10 illustrates in particular the course of the amplitude of the waveforms 800 as a function of time.
  • the example of FIG. 10 basically corresponds to the example of FIG. 8.
  • the signal contributions 811, 821 each have a DC component 801.
  • FIG. 11 illustrates aspects related to waveforms 800 that may be used to drive the bending piezoactuators 310, 320 according to various examples described herein.
  • FIG. 11 illustrates, in particular, the course of the amplitude of the waveforms 200 as a function of time.
  • the example of FIG. 11 basically corresponds to the example of FIG. 9.
  • the signal contributions 812, 822 each have a DC component 801. In general, it is possible that only individual ones of the signal contributions 812, 822 have a DC component 801. Different signal contributions can also have different DC components.
  • FIG. 12 illustrates aspects related to amplitude modulation of the signal contributions 812, 822.
  • FIG. 12 shows the amplitude of the signal contributions 812, 822 as a function of time.
  • the time duration 860 needed to sample an overlay figure is shown. This means that the duration 860 may correspond to a refresh rate of the laser scanner 99.
  • the amplitude of the in-phase signal contributions 812, 822 is monotonically and constantly increased as a function of time during the duration 860.
  • the amplitude could also be increased gradually.
  • the amplitude could also be reduced monotonically.
  • FIG. 12 also illustrates aspects related to amplitude modulation of the signal contributions 81 1, 821. From FIG. 12, it can be seen that the amplitude of the antiphase signal contributions 81 1, 821 does not vary.
  • a particularly efficient scanning of the laser light can be implemented.
  • FIG. 13 illustrates aspects relating to an overlay figure 900.
  • FIG. 13 particularly illustrates aspects related to a scan area 915 (dashed line in FIG. 13) defined by the overlay figure 900.
  • FIG. 13 shows the scan angle 901, which can be achieved by a first degree of freedom of the movement 501 of the at least one support element 101, 102.
  • FIG. 13 also shows the scan angle 902 that may be achieved by a second degree of freedom of movement 502 of the at least one support member 101, 102 (the scan angles are also indicated in FIG. 1, for example).
  • the first degree of freedom of the movement 501 it would be possible for the first degree of freedom of the movement 501 to correspond to a transverse mode of the at least one support element 101, 102. Then it would be possible for the transverse mode 501 to be excited by the in-phase signal contributions 812, 822. Accordingly, it would be possible for the degree of freedom of movement 902 to correspond to a torsional mode of the at least one support element 101, 102. Then it would be possible for the torsional mode 502 to be excited by the antiphase signal contributions 811, 821.
  • the overlay figure 900 according to the example of FIG. 13 is obtained when the transverse mode 501 and the torsional mode 902 have the same frequency.
  • the overlay figure 900 according to the example of FIG. 13 is obtained when the amplitude of the transverse mode 501 is increased by the amplitude modulation of the in-phase signal contributions 812, 822 (see FIG. 12) during the time period 860. That is, it is achieved that the overlay figure 900 is obtained as an "opening eye", that is, larger scan angles 901 are obtained with increasing amplitude of the transverse mode 501 (represented by the vertical dotted arrows in FIG Dotted arrows in FIG 13), with which the environment of the laser scanner can be scanned 99.
  • FIG. 14 illustrates aspects relating to resonant curves 1301, 1302 of the degrees of freedom of the movement 501, 502, which may include, for example, the overlay figure 900 according to the example of FIG. 13 can implement.
  • FIG. 14 illustrates the amplitude of the excitation of the respective degree of freedom of the movement 501, 502. A resonance spectrum according to the example of FIG.
  • the resonance curve 1301 of the transverse mode 501 has a maximum 131 1 (solid line)
  • the resonance curve 1302 of the torsional mode 502 is also shown (dashed line).
  • the resonance curve 1302 has a maximum 1312.
  • the maximum 1312 of the torsional mode 502 is at a lower frequency than the maximum 131 1 of the transverse mode, e.g. the transversal mode 501 could be lowest order.
  • the torsional mode 502 can thus form the fundamental mode of the system. This can be achieved that the scan module is particularly robust against external disturbances such as vibrations, etc. This is the case since such external excitations typically excite transverse mode 501 most efficiently, but do not excite torsional mode 502 particularly efficiently.
  • the resonance curves 1301, 1302 could be Lorentz-shaped. This would be the case if the corresponding degrees of freedom of movement 501, 502 can be described by a harmonic oscillator.
  • the maxima 1311, 1312 are shifted from each other in frequency.
  • the frequency spacing between the maxima 131 1, 1312 could be in the range of 5 Hz to 20 Hz.
  • the half widths 1321, 1322 of the resonance curves 1301, 1302 are also shown.
  • the half-width is defined by the attenuation of the corresponding degree of freedom of movement 501, 502.
  • the half widths 1321, 1322 are equal; however, in general, the half widths 1321, 1322 could be different from each other. In some examples, different techniques may be used to increase the half widths 1321, 1322.
  • a corresponding adhesive could be provided, whose particular locations, for example between the bending piezoactuators 310, 320 and the base 141, is arranged.
  • the resonance curves 1301, 1302 have an overlap region 1330 (shown in dark). This means that the transverse mode 501 and the torsional mode 502 are degenerate.
  • both the resonance curve 1301 has significant amplitudes and the resonance curve 1302.
  • the amplitudes of the resonance curves 1301, 1302 in the overlap region not to be less than 10% of the corresponding amplitudes at the respective maximum 131 1 , 1312, optionally not ⁇ 5% each, optionally not ⁇ 1% each further.
  • the overlap region 1330 can be achieved that the two degrees of freedom of movement 501, 502 can be coupled coupled, namely each semi-resonant at a frequency 1399th
  • the frequency 1399 is between the two maxima 131 1, 1312
  • the temporal and spatial Overlay can be achieved.
  • nonlinear effects can be suppressed or avoided by coupling between the two degrees of freedom of movement 501, 502.
  • FIG. 15 illustrates aspects relating to resonant curves 1301, 1302 of the degrees of freedom of movement 501, 502.
  • the two degrees of freedom of movement 501, 502 have no overlapping area.
  • the degree of freedom of movement 502 may correspond to a torsional mode.
  • the torsional mode 502 may form a fundamental mode of the kinematic system, i. there can be no further degrees of freedom of movement with smaller natural frequencies.
  • one or more balancing weights may be provided, which may be formed integrally with the at least one support element 101, 102, for example.
  • a corresponding example is shown in FIG. 16 shown.
  • the example of FIG. 16 basically corresponds to the example of FIG. 1.
  • balancing weights 1371, 1372 provided on the support elements 101, 102.
  • the balancing weights 1371, 1372 are in particular integrally formed with the support elements 101, 102.
  • the balancing weights 1371, 1372 correspond to a local enlargement of the cross section of the rod-shaped supporting elements 101, 102.
  • FIG. 17 illustrates aspects relating to a laser scanner 99.
  • a scanning module 100 having a first pair of support members 101-1, 102-1 and a second pair of support members 102-1, 102-2.
  • the first pair of support members 101-1, 102-1 is arranged in a plane; the second pair of support members 101-2, 102-2 is also arranged in a plane. These planes are parallel to each other and offset from one another.
  • Each pair of support elements is associated with a corresponding base 141-1, 141-2, and a corresponding interface element 142-1, 142-2. Both interface elements 142-1, 142-2 make a connection with a mirror 150 here. It can thus be achieved that a particularly stable scanning module 100 can be provided, which has a large number of supporting elements.
  • the scan module 100 may comprise support elements arranged in different planes. This can allow a particularly large robustness.
  • the base 141-1 is not integrally formed with the base 141-2.
  • the interface element 142-1 is not formed integrally with the interface element 142-2.
  • the support members 101-1, 102-1 are not formed integrally with the support members 102-1, 102-2.
  • the various aforementioned parts it would be possible for the various aforementioned parts to be manufactured from different regions of a wafer and then connected to one another, for example by gluing or anodic bonding.
  • Other examples of joining techniques include: fusion bonding; Fusion or direct bonding; Eutectic bonding; Thermocompression bonding; and adhesive bonding.
  • Corresponding connection surfaces 160 are shown in FIG. 17 marked. By means of such techniques it can be achieved that the scan module 100 can be manufactured particularly easily.
  • the complete scan module 100 it is not necessary for the complete scan module 100 to be manufactured in one piece or integrated from a wafer. Rather, the scan module 100 can be produced in a two-stage manufacturing process. At the same time, however, this can not significantly reduce the robustness: due to the large area connecting surfaces 160, a particularly stable connection between the base 141-1 and the base 141-2 and the interface element 142-1 and the interface element 142-2, respectively.
  • the base 141-1 is directly connected to the base 141-2;
  • the interface element 142-1 is directly connected to the interface element 142-2. This is made possible by the thickness variation with respect to the support members 101-1, 101-2, 102-1, 102-2 (see Fig. 3).
  • base 141-1, base 141-2, interface element 142-1, interface element 142-2, and support elements 101-1, 101-2, 102-1, 102-2 could all have the same thickness; then the connection could be via spacers (not shown in FIG. 17).
  • Such a symmetrical structure with respect to the central axis 220 may in particular have advantages with respect to the excitation of the torsional mode 502. Nonlinearities can be avoided.
  • FIG. 18 illustrates aspects related to the torsional mode 502.
  • FIG. 18 schematically illustrates the deflection of the torsional mode 502 for the scan module 100 according to the example of FIG. 17 (in FIG.18, the deflected state is shown by the solid lines and the rest state is shown by the dashed lines).
  • the axis of rotation 220 of the torsional mode 502 is also shown.
  • the axis of rotation 220 lies in the plane of symmetry 221, which forms the base 141-1 on the base 141-2 or the support elements 101-1, 101-2 on the support elements 102-1, 102-2.
  • the torsional mode 502 may also be referred to as a coupled torsional mode 502 of the support elements 101-1, 101-2, 102-1, 102-2.
  • This is promoted by the geometric arrangement of the support elements 101-1, 101-2, 102-1, 102-2 to each other, namely in particular by the parallel arrangement of the support elements 101-1, 101-2, 102-1, 102-2 together - so with a particularly small distance between the support elements 101-1, 101-2, 102-1, 102-2 compared to the length thereof.
  • This coupled torsional mode 502 may be referred to as parallel kinematics of the support elements 101-1, 101-2, 102-1, 102-2.
  • the support elements 101-1, 102-1, 101-2, 102-2 are arranged rotationally symmetrical with respect to a central axis 220.
  • the presence of a rotational symmetry means, for example, that the system of the support elements 101-1, 102-1, 101-2, 102-2 can be converted into themselves by rotation.
  • the magnitude of the rotational symmetry designates how often per 360 ° rotation angle the system of the support elements 101-1, 102-1, 101-2, 102-2 can be converted into itself.
  • the rotational symmetry could be n-fold, where n denotes the number of supporting elements used.
  • Nonlinearities in the excitation of the torsional mode 502 can be reduced or suppressed.
  • the support elements 101-1, 102-1, 101-2, 102-2 could be arranged such that the longitudinal axes and the central axis 220 all lie in one plane. Then the rotational symmetry would be twofold (and not fourfold, as in the example of FIG. In such a case, the orthogonal transverse modes 501 (different directions perpendicular to the central axis 220) have different frequencies - due to different moments of inertia.
  • the direction of the low-frequency transverse mode rotates together with the rotation upon excitation of the torsional mode 502.
  • a parametric oscillator is formed because the natural frequencies vary as a function of the angle of rotation or thus as a function of time.
  • the transfer of energy between the various states of the parametric oscillator causes nonlinearities.
  • the support elements can be arranged so that no dependence of the natural frequencies of the torsion angle occur.
  • the twisting of the support elements 101-1, 102-1, 101-2, 102-2 into one another along the central axis 220, as well as the twisting of the support elements 101-1, 102-1, 101-2, 102-2 along their longitudinal axes increases for greater distances to the base 141 and also increases for larger torsion angles. For example, if the torsional angle of the torsional mode 502 becomes greater than the angular spacing of the support elements 101-1, 102-1, 101-2, 102-2 (in the example of Figure 18, 90 ° because of the fourfold rotational symmetry), a complete twist with longitudinal Overlap of the support elements 101-1, 102-1, 101-2, 102-2 into each other before.
  • the torsion angle of the torsional mode 502 can be greater than 360 n, where n describes the accuracy of the rotational symmetry.
  • n describes the accuracy of the rotational symmetry.
  • FIG. 19 illustrates aspects relating to a scan module 100.
  • the scanning module 101 comprises a single support element 101 with an optional balance weight 1371. Therefore, upon excitation of the transverse mode 501, a tilting of the mirror surface 151 occurs. This is shown in FIG. 20 shown. In FIG. In particular, the lowest order transverse mode 501 is shown. In other examples, it would also be possible to use a transversal mode of higher order to scan light 180, in which case the deflection of support element 101 at certain positions along length 21 1 of support element 101 would be zero (so-called node or belly of deflection) ).
  • FIG. 21 illustrates aspects relating to a scan module 100.
  • the scanning module 101 includes a pair of support members 101, 102. These are arranged in a plane (the plane of the drawing in FIG. 21). Upon excitation of the transverse mode 502 with deflection in this plane, there is no tilting of the mirror surface 151. Therefore, the deflection of the light 180 is not influenced by the excitation of the transverse mode 502. This is in FIG. 22 is shown. As a result, a system-inherent stabilization against vibrations can be achieved. A particularly strong stabilization can be achieved, for example, if more than two support elements are used, which are not all in the same plane. This would be, for example, for the scan module 100 according to the example of FIG. 17 the case.
  • FIG. FIG. 23 illustrates aspects relating to a scan module 100.
  • the piezoactuators 310, 320 are applied directly to the support elements 101, 102, for example by vapor deposition processes. It can thus be achieved that the excitation of the degrees of freedom of the movement 501, 502 does not take place via the base 141; but rather directly in the area of the support elements 101, 102. This can allow a particularly efficient and space-saving excitation.
  • FIG. 24 is a flowchart of an exemplary method of manufacturing a scan module.
  • scan module 100 may be made according to various examples described herein.
  • an etching mask is defined by means of lithography in step 5001 on a wafer, for example a Si wafer or an SOI wafer.
  • the wafer may have a thickness of, for example, 500 ⁇ m.
  • step 5002 the wafer is etched.
  • the scan module or parts of the scan module is obtained as a one-piece and freestanding structure.
  • etching could be from one or more sides of the wafer.
  • a front side etch could be done, e.g. with an SOI etch stop.
  • a backside etch could be done, e.g. to define a depression in the edge area of the base.
  • the edge region can obtain a large shape-induced elasticity.
  • a plurality of etched structures could be bonded together by gluing or anodic bonding (see Figures 17 and 25).
  • the scan module can be completed.
  • the etched structures to be joined could be cropped: for this, the wafer could be cut or sawn.
  • the mirror surface is attached to the scan module 100.
  • the mirror surface could then include a wedge with the unetched wafer surface, eg in the range of -60 ° to + 60 °, optionally of 45 ° or 0 °.
  • the mirror surface could include an angle with the unetched wafer surface of 45 ° ⁇ 15 °.
  • attaching the mirror surface could include trimming aluminum or gold on a corresponding surface of scan module 100 and interface element 142, respectively.
  • a mirror 150 could be adhered to the interface element 142 by means of adhesive.
  • the mirror 150 could also be made of a semiconductor material or of glass. Anodic bonding would also be possible to secure the mirror 150.
  • Other examples of joining techniques include: fusion bonding; Fusion or direct bonding; eutectic bonding; Thermocompression bonding; and adhesive bonding. In general, therefore, the mirror 150 can be fixed on the scan module 100.
  • step 5004 basically an optional step, the actuator is attached to the scan module 100.
  • this could include depositing piezoelectric material on the support members 101, 102 (see FIG. 23).
  • bending piezoactuators it would also be possible for bending piezoactuators to be attached to the base 141, for example.
  • FIG. FIG. 25 illustrates aspects related to fabricating a scan module 100.
  • FIG. 25 Aspects Related to Joining Multiple Etched Structures 411, 412.
  • FIG. 25 shows that two identical etched structures 411, 412 are obtained by wafer processing.
  • Each of the etched structures respectively forms a corresponding base 141-1, 141-2, a corresponding interface element 142-1, 142-2, and support elements 101-1, 102-1 and 101-2, 102-2.
  • the base 141-1, the interface element 142-1, and the support elements 101-1, 102-1 all have the same thickness 1998, 1999 (in contrast to the scenario of FIG. 3).
  • the base 141-2, the interface element 142-2, and the support elements 101 -2, 102-2 all have the same thickness 1998, 1999 (in contrast to the scenario of FIG. 3).
  • the two etched structures 41 1, 412 are joined together, for example by bonding, bonding with epoxy glue or PMMA, etc. This is shown in FIG. 25 illustrated by the dashed arrows.
  • the etched structures are not directly connected. Rather, spacers 401, 402 are used. These are not one-piece formed with the etched structures 41 1, 412.
  • the base 141-1 of the etched structure 41 1 is bonded to the base 141-2 of the etched structure 412 by a base spacer 401 disposed therebetween.
  • the interface element 142-1 of the etched structure 41 1 is connected to the interface element 142-2 of the etched structure 412 via the interface spacer 402.
  • Per spacer 401, 402 are thus two connecting surfaces - where, for example, adhesive etc. is applied - before, which are each assigned to one of the two structures 411, 412.
  • the plane of symmetry is also shown, which by mirroring the two structures 41 1, 412 into each other; and thus in particular the support elements 101-1, 102-2 in the support elements 101-2, 102-2 images.
  • the spacers 401, 402 may also be obtained by lithography processing of a wafer.
  • the spacers 401, 402 may therefore be made of silicon, for example.
  • the spacers 401, 402 are bulk parts having a low shape-induced elasticity. This causes a strong coupling of the two structures 411, 412 forming the scan module 100.
  • the spacers 401, 402 in particular the distance of the support elements 101-1, 102-1 to 101-2, 102-2 can be set flexibly.
  • the etched structures may be allowed to have no lateral thickness variation - that is, the bases 141 - 1, 141 - 2, the interface elements 142 - 1, 142 - 2, and the support elements 101 - 1, 101 - 2, 102-1, 102-2 can all have the same thickness 1998, 1999. This allows a particularly simple and less error-prone processing of the wafer.
  • the material is not stressed. For example, SOI wafers may be dispensable because multiple etch stops are not needed. This can cheapen the process.
  • the shape-induced elasticity of the edge region 146 is made possible by the geometric shape of the edge region 146: in the example of FIG. 25, the edge region 146 of the bases 141-1, 141-2 is bow-shaped. The central area 145 and the edge area 146 have the same thickness 1998. In order to promote tilting of the bases 141-1, 141-2 for exciting the torsional mode 502, the edge regions 146 of the bases 141-1, 141-2 have an increased shape-induced elasticity. This is shown in the example of FIG. 25 also achieved by depressions, which in the edge regions 146 on one of the central regions 145 to be turned Position are located (in FIG 25 by the dashed circle highlighted). Corresponding details are in connection with FIG. 25 described.
  • FIG. FIG. 26 illustrates aspects relating to the scan module 100.
  • FIG. FIG. 26 is a sectional view taken along line A-A 'of FIG. 25.
  • FIG. FIG. 26 illustrates aspects related to shape-induced elasticity of the edge regions 146 of the bases 141-1, 141-2.
  • the bases 141-1, 142-2 comprise a central area 145 and an edge area 146 (see also FIG. 4).
  • the edge regions 146 each have a depression 149 or trench / notch / taper.
  • the depression 149 is in each case arranged along an axis 148, which are each arranged perpendicular to the longitudinal axes 1111, 112 of the support elements (perpendicular to the plane of the drawing of FIG.
  • the recesses 149 are arranged on a central region 145 to be turned side of the bases 141-1, 141-2.
  • the recesses 149 may be disposed adjacent to the central region 145.
  • tilting of the bases 141 - 1, 141 - can take place about a tilt axis which is arranged parallel to the longitudinal axes 11 1, 12 of the support elements (perpendicular to the plane of the drawing in FIG. 26) (tilting is illustrated in FIG the dotted arrow shown).
  • Such tilting may be accomplished by bending piezoactuators located at the edge regions 146, for example, spaced apart from the depressions 149 (see also FIGS. 5A, 5B, 6A, 6B).
  • the recesses could be created by backside structuring of a corresponding wafer, wherein the support elements Vorderrichstruktun für für kali can be generated. In this way it can be avoided that, in the case of mechanical removal of wafer material following the front side structure and before the back side structure in the area of the depression, a breakage of the material or excessive stress on the material takes place.
  • the features of the previously described embodiments and aspects of the invention may be combined. In particular, the features may be used not only in the described combinations but also in other combinations or per se, without departing from the scope of the invention.
  • various techniques have been described above with respect to scan module with a certain number of support elements. The different techniques but can also be used for scan module with a different number of support elements.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Remote Sensing (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Micromachines (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Optical Radar Systems And Details Thereof (AREA)

Abstract

L'invention concerne un module de balayage (100) pour un scanner lumineux (99), le module comportant une base (141) et un élément d'interface (142), lequel est conçu pour fixer une surface de miroir (151). Le module de balayage (100) comporte également au moins un élément d'appui (101, 102), lequel s'étend entre la base (141) et l'élément d'interface (142) et lequel présente une étendue perpendiculairement à la surface de miroir (151) qui n'est pas inférieure à 0,7 mm. La base (141), l'élément d'interface (142) et l'élément ou les les éléments d'appui (101) sont formés d'une seule pièce.
EP17808314.3A 2016-11-23 2017-11-22 Module de balayage mems pour scanner lumineux Withdrawn EP3545332A2 (fr)

Applications Claiming Priority (2)

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DE102016014001.1A DE102016014001B4 (de) 2016-11-23 2016-11-23 MEMS Scanmodul für einen Lichtscanner mit mindestens zwei Stützelementen
PCT/DE2017/101007 WO2018095486A2 (fr) 2016-11-23 2017-11-22 Module de balayage mems pour scanner lumineux

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EP (1) EP3545332A2 (fr)
JP (1) JP6933401B2 (fr)
CN (1) CN110312944B (fr)
DE (1) DE102016014001B4 (fr)
WO (1) WO2018095486A2 (fr)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3435172B1 (fr) * 2017-07-28 2021-11-24 The Swatch Group Research and Development Ltd Procede de realisation d'un mecanisme de guidage flexible pour oscillateur mecanique d'horlogerie
DE102017118776B4 (de) * 2017-08-17 2020-11-12 Blickfeld GmbH Scaneinheit mit mindestens zwei Stützelementen und einem freistehenden Umlenkelement und Verfahren zum Scannen von Licht
DE102018102962A1 (de) * 2018-02-09 2019-08-14 Blickfeld GmbH Ausrichten eines resonanten Scansystems
DE102018112809A1 (de) * 2018-05-29 2019-12-05 Blickfeld GmbH Betätigung eines Scanspiegels mit einer elastischen Kopplung
DE102018113739A1 (de) 2018-06-08 2019-12-12 Blickfeld GmbH Koaxiales optisches System eines reibungsfreien Scansystems für Lichtdetektion und Abstandsmessung, LIDAR, Messungen
US11454932B2 (en) 2018-07-24 2022-09-27 The Swatch Group Research And Development Ltd Method for making a flexure bearing mechanism for a mechanical timepiece oscillator
EP3636588B1 (fr) * 2018-09-26 2023-10-25 Murata Manufacturing Co., Ltd. Ressorts à réglage de fréquence mems
DE102018126522A1 (de) 2018-10-24 2020-04-30 Blickfeld GmbH Laufzeitbasierte Entfernungsmessung unter Verwendung von modulierten Pulsfolgen von Laserpulsen
WO2022014532A1 (fr) * 2020-07-15 2022-01-20 株式会社小糸製作所 Dispositif de réflexion de lumière, dispositif de capteur et dispositif d'éclairage
DE102021208125A1 (de) 2021-07-28 2023-02-02 Robert Bosch Gesellschaft mit beschränkter Haftung Verfahren zur Ansteuerung einer piezoelektrischen Antriebseinheit

Family Cites Families (52)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878721A (en) * 1987-02-17 1989-11-07 General Scanning, Inc. Resonant mechanical system
US5280165A (en) * 1989-10-30 1994-01-18 Symbol Technolgoies, Inc. Scan pattern generators for bar code symbol readers
JPH07225347A (ja) * 1994-02-14 1995-08-22 S K S Kk レゾナントスキャナー
US5742377A (en) * 1994-04-12 1998-04-21 The Board Of Trustees Of The Leland Stanford, Jr. University Cantilever for scanning probe microscope including piezoelectric element and method of using the same
US5926307A (en) * 1996-12-19 1999-07-20 Asahi Kogaku Kogyo Kabushiki Kaisha Optical deflection device
JP3462684B2 (ja) * 1996-12-19 2003-11-05 ペンタックス株式会社 光学偏向装置
US5915063A (en) * 1997-01-15 1999-06-22 Colbourne; Paul Variable optical attenuator
US6498870B1 (en) * 1998-04-20 2002-12-24 Omm, Inc. Micromachined optomechanical switches
FR2778989B1 (fr) * 1998-05-25 2000-07-21 Suisse Electronique Microtech Actionneur optique permettant d'amener un faisceau de lumiere incidente sur une surface fixe exterieure audit actionneur
JP4724936B2 (ja) * 2000-04-28 2011-07-13 株式会社デンソー 光スキャナ及び２次元スキャンシステム
US6486995B2 (en) * 2000-04-28 2002-11-26 Denso Corporation Vibration-resisting structure of optical scanner
US6708491B1 (en) * 2000-09-12 2004-03-23 3M Innovative Properties Company Direct acting vertical thermal actuator
US6647164B1 (en) * 2000-10-31 2003-11-11 3M Innovative Properties Company Gimbaled micro-mirror positionable by thermal actuators
JP4724308B2 (ja) * 2001-04-17 2011-07-13 オリンパス株式会社 ガルバノミラー
JP3765251B2 (ja) * 2001-06-25 2006-04-12 日産自動車株式会社 光スキャナ装置及び光スキャナ装置の駆動方法
US6632698B2 (en) * 2001-08-07 2003-10-14 Hewlett-Packard Development Company, L.P. Microelectromechanical device having a stiffened support beam, and methods of forming stiffened support beams in MEMS
DE10213671A1 (de) * 2002-03-27 2003-10-23 Karlsruhe Forschzent Aktor für einen optisch-mechanischen Scanner sowie Verfahren unter Verwendung des Aktors
US6956683B2 (en) * 2003-06-11 2005-10-18 Texas Instruments Incorporated Pivoting platform having a piezoelectric drive
DE602004006284T2 (de) * 2003-07-14 2008-01-03 Koninklijke Philips Electronics N.V. Laserstrahlabtaster
JP2005043407A (ja) * 2003-07-22 2005-02-17 Ricoh Co Ltd 波面収差補正ミラーおよび光ピックアップ
JP4461870B2 (ja) * 2004-03-26 2010-05-12 ブラザー工業株式会社 光走査装置およびそれを備えた画像形成装置
TWI239414B (en) * 2004-06-25 2005-09-11 Ind Tech Res Inst MEMS optical switch with self-assembly structure
US6985279B1 (en) * 2004-08-02 2006-01-10 Advanced Nano Systems, Inc. MEMS mirror with drive rotation amplification of mirror rotation angle
US7636101B2 (en) * 2005-02-09 2009-12-22 Microvision, Inc. MEMS scanner adapted to a laser printer
JP4574396B2 (ja) * 2005-03-02 2010-11-04 キヤノン株式会社 光偏向器
US7250705B2 (en) * 2005-09-16 2007-07-31 Texas Instruments Incorporated Resonant oscillating device actuator structure
US7474165B2 (en) * 2005-11-22 2009-01-06 Canon Kabushiki Kaisha Oscillating device, optical deflector and optical instrument using the same
WO2008072248A2 (fr) * 2006-12-14 2008-06-19 Ramot At Tel-Aviv University Ltd. Actionneur de basculement avec des électrodes a faible espacement
JP2009122383A (ja) * 2007-11-14 2009-06-04 Canon Inc 揺動体装置の製造方法、該製造方法により製造された揺動体装置によって構成される光偏向器及び光学機器
DE102008004639A1 (de) * 2008-01-16 2009-07-23 Robert Bosch Gmbh Mikromechanisches Bauteil und Herstellungsverfahren für ein mikromechanisches Bauteil
JP5239379B2 (ja) * 2008-02-18 2013-07-17 パナソニック株式会社 光学反射素子
US8222796B2 (en) * 2008-10-15 2012-07-17 International Business Machines Corporation Micro-electro-mechanical device with a piezoelectric actuator
KR101343314B1 (ko) * 2009-02-18 2013-12-18 도꾸리쯔교세이호진 상교기쥬쯔 소고겡뀨죠 광빔 주사장치
JP2011039217A (ja) 2009-08-10 2011-02-24 Seiko Epson Corp 光偏向器及び光偏向器の製造方法
JP2011186422A (ja) * 2010-02-10 2011-09-22 Sanyo Electric Co Ltd ビーム照射装置
JP4888614B2 (ja) * 2010-04-28 2012-02-29 コニカミノルタホールディングス株式会社 光路補正装置、干渉計およびフーリエ変換分光分析装置
US8643937B2 (en) * 2010-11-16 2014-02-04 Imec Diffractive optical nano-electro-mechanical device with reduced driving voltage
FR2984010B1 (fr) * 2011-12-09 2014-01-03 St Microelectronics Rousset Dispositif capacitif integre ayant une valeur capacitive thermiquement variable
US9715107B2 (en) * 2012-03-22 2017-07-25 Apple Inc. Coupling schemes for gimbaled scanning mirror arrays
US10401865B1 (en) * 2013-03-06 2019-09-03 Waymo Llc Light steering device with an array of oscillating reflective slats
DE102013223937B4 (de) 2013-11-22 2022-01-05 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Mikrospiegelanordnung
FR3022691B1 (fr) * 2014-06-23 2016-07-01 Stmicroelectronics Rousset Dispositif capacitif commandable integre
US9869858B2 (en) * 2015-12-01 2018-01-16 Apple Inc. Electrical tuning of resonant scanning
CN108604008B (zh) * 2016-02-17 2020-11-10 三菱电机株式会社 反射镜驱动装置、反射镜驱动装置的控制方法及反射镜驱动装置的制造方法
DE102016010448B4 (de) 2016-08-30 2024-01-11 Blickfeld GmbH Faser-basierter Laser-Scanner
JP6724663B2 (ja) * 2016-09-01 2020-07-15 船井電機株式会社 スキャナミラー
DE102016011647A1 (de) * 2016-09-26 2018-03-29 Blickfeld GmbH Anregung von Fasern mit Biegepiezoaktuatoren
DE102016013227A1 (de) 2016-11-07 2018-05-09 Blickfeld GmbH Faser-Scanner mit mindestens zwei Fasern
DE102017002866A1 (de) * 2017-03-24 2018-09-27 Blickfeld GmbH Scanner mit zwei sequentiellen Scaneinheiten
DE102017118776B4 (de) * 2017-08-17 2020-11-12 Blickfeld GmbH Scaneinheit mit mindestens zwei Stützelementen und einem freistehenden Umlenkelement und Verfahren zum Scannen von Licht
DE102018010451B4 (de) * 2018-05-22 2023-11-02 Infineon Technologies Ag MEMS-Bauelement mit Aufhängungsstruktur und Verfahren zum Herstellen eines MEMS-Bauelementes
IT201800008091A1 (it) * 2018-08-14 2020-02-14 St Microelectronics Srl Dispositivo micromeccanico dotato di una struttura orientabile tramite attuazione quasi-statica di tipo piezoelettrico e avente elementi di irrigidimento

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US20200183150A1 (en) 2020-06-11
DE102016014001A1 (de) 2018-05-24
US11143858B2 (en) 2021-10-12
WO2018095486A2 (fr) 2018-05-31
WO2018095486A3 (fr) 2018-07-19
JP6933401B2 (ja) 2021-09-08
CN110312944A (zh) 2019-10-08
JP2020506437A (ja) 2020-02-27
CN110312944B (zh) 2023-11-07
DE102016014001B4 (de) 2020-11-12

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