EP3381047A4 - Fired multilayer stacks for use in integrated circuits and solar cells - Google Patents

Fired multilayer stacks for use in integrated circuits and solar cells Download PDF

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Publication number
EP3381047A4
EP3381047A4 EP16869315.8A EP16869315A EP3381047A4 EP 3381047 A4 EP3381047 A4 EP 3381047A4 EP 16869315 A EP16869315 A EP 16869315A EP 3381047 A4 EP3381047 A4 EP 3381047A4
Authority
EP
European Patent Office
Prior art keywords
integrated circuits
solar cells
multilayer stacks
fired multilayer
fired
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP16869315.8A
Other languages
German (de)
French (fr)
Other versions
EP3381047A1 (en
Inventor
Brian Hardin
Erik Sauar
Dhea Suseno
Jesse HINRICHER
Jennifer Huang
Tom Yu-Tang Lin
Stephen CONNOR
Daniel HELLEBUSCH
Craig PETERS
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Resonac Corp
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of EP3381047A1 publication Critical patent/EP3381047A1/en
Publication of EP3381047A4 publication Critical patent/EP3381047A4/en
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/142—Energy conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/0328—Inorganic materials including, apart from doping materials or other impurities, semiconductor materials provided for in two or more of groups H01L31/0272 - H01L31/032
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/05—Metallic powder characterised by the size or surface area of the particles
    • B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
    • B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
    • B22F1/103—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing an organic binding agent comprising a mixture of, or obtained by reaction of, two or more components other than a solvent or a lubricating agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
    • B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/04—Making non-ferrous alloys by powder metallurgy
    • C22C1/0466—Alloys based on noble metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/02002—Arrangements for conducting electric current to or from the device in operations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
    • H02S40/00—Components or accessories in combination with PV modules, not provided for in groups H02S10/00 - H02S30/00
    • H02S40/40—Thermal components
    • H02S40/44—Means to utilise heat energy, e.g. hybrid systems producing warm water and electricity at the same time
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/05—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes
    • H10N30/053—Manufacture of multilayered piezoelectric or electrostrictive devices, or parts thereof, e.g. by stacking piezoelectric bodies and electrodes by integrally sintering piezoelectric or electrostrictive bodies and electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/50—Piezoelectric or electrostrictive devices having a stacked or multilayer structure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/60—Thermal-PV hybrids
EP16869315.8A 2015-11-24 2016-11-23 Fired multilayer stacks for use in integrated circuits and solar cells Withdrawn EP3381047A4 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201562259636P 2015-11-24 2015-11-24
US201662318566P 2016-04-05 2016-04-05
US201662371236P 2016-08-05 2016-08-05
US201662423020P 2016-11-16 2016-11-16
PCT/US2016/063696 WO2017091782A1 (en) 2015-11-24 2016-11-23 Fired multilayer stacks for use in integrated circuits and solar cells

Publications (2)

Publication Number Publication Date
EP3381047A1 EP3381047A1 (en) 2018-10-03
EP3381047A4 true EP3381047A4 (en) 2019-07-03

Family

ID=58764377

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16869315.8A Withdrawn EP3381047A4 (en) 2015-11-24 2016-11-23 Fired multilayer stacks for use in integrated circuits and solar cells

Country Status (7)

Country Link
EP (1) EP3381047A4 (en)
JP (2) JP7006593B2 (en)
KR (1) KR20180087342A (en)
CN (7) CN207250530U (en)
SG (1) SG11201804392WA (en)
TW (8) TWM544120U (en)
WO (1) WO2017091782A1 (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017091782A1 (en) * 2015-11-24 2017-06-01 Plant Pv, Inc Fired multilayer stacks for use in integrated circuits and solar cells
CN107454699B (en) * 2017-08-14 2020-11-20 湖南嘉业达电子有限公司 Electromagnetic induction heating film manufacturing method and electromagnetic induction heating film
CN107845694A (en) * 2017-11-03 2018-03-27 通威太阳能（安徽）有限公司 A kind of back surface field passivation technology solar battery sheet mixed slurry
CN108091709A (en) * 2017-12-20 2018-05-29 张汉钰 A kind of silicon zinc multidimensional photovoltaic material and preparation method thereof
JP7174049B2 (en) * 2018-02-09 2022-11-17 ヒューレット－パッカード デベロップメント カンパニー エル．ピー． material set
CN108447780A (en) * 2018-02-11 2018-08-24 厦门市三安集成电路有限公司 A kind of ohmic contact structure of nitride compound semiconductor device and preparation method thereof
CN112384992A (en) * 2018-07-06 2021-02-19 昭和电工材料株式会社 Printing paste with metal-based additives for modifying the material properties of a metal particle layer
US11710580B2 (en) * 2018-07-06 2023-07-25 Senju Metal Industry Co., Ltd. Electrically conductive paste and sintered body
JP7108037B2 (en) 2018-08-06 2022-07-27 株式会社トクヤマ Method for recovering valuables from solar cell modules
KR20200021772A (en) * 2018-08-21 2020-03-02 엘지전자 주식회사 A compound semiconductor solar cell and method for manufacturing the same
CN109754905A (en) * 2019-02-27 2019-05-14 江苏正能电子科技有限公司 A kind of high thixotroping PERC crystal silicon solar energy battery back side silver paste and preparation method thereof
US11455521B2 (en) 2019-03-01 2022-09-27 International Business Machines Corporation Neuromorphic device driven by copper ion intercalation
CN110988728B (en) * 2019-11-25 2023-08-04 安徽绿沃循环能源科技有限公司 Method for rapidly diagnosing abnormal internal connection of lithium battery pack
JPWO2022181732A1 (en) * 2021-02-24 2022-09-01
WO2022181730A1 (en) * 2021-02-24 2022-09-01 昭和電工マテリアルズ株式会社 Solar cell element and solar cell
JPWO2022181731A1 (en) * 2021-02-24 2022-09-01
CN113087400B (en) * 2021-04-21 2023-07-07 贵州国锐鑫节能科技有限公司 Low-melting-point glass powder for improving conversion efficiency of solar cell and preparation method thereof
CN115000199B (en) * 2022-08-01 2022-10-25 一道新能源科技(衢州)有限公司 P type PERC single face battery structure

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876433A (en) * 1973-12-28 1975-04-08 Du Pont Bismuth-containing silver conductor compositions
EP2196514A1 (en) * 2007-10-03 2010-06-16 Hitachi Chemical Company, Ltd. Adhesive composition, electronic component-mounted substrate using the adhesive composition, and semiconductor device
CN102969039A (en) * 2012-10-31 2013-03-13 彩虹集团公司 Photosensitive conductive silver electrode slurry and preparation method thereof

Family Cites Families (48)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930093A (en) * 1973-12-28 1975-12-30 Du Pont Bismuth-containing silver conductor compositions
US5320684A (en) * 1992-05-27 1994-06-14 Mobil Solar Energy Corporation Solar cell and method of making same
JPH06209115A (en) * 1993-01-12 1994-07-26 Sanyo Electric Co Ltd Solder part forming method of solar cell
US6084175A (en) * 1993-05-20 2000-07-04 Amoco/Enron Solar Front contact trenches for polycrystalline photovoltaic devices and semi-conductor devices with buried contacts
JP4403654B2 (en) * 2000-11-16 2010-01-27 富士電機システムズ株式会社 Thin film solar cell
US7042035B2 (en) * 2002-08-02 2006-05-09 Unity Semiconductor Corporation Memory array with high temperature wiring
JP2004127987A (en) * 2002-09-30 2004-04-22 Sharp Corp Solar cell and method for manufacturing same
WO2005109524A1 (en) * 2004-05-07 2005-11-17 Mitsubishi Denki Kabushiki Kaisha Solar cell and manufacturing method thereof
US20060231802A1 (en) * 2005-04-14 2006-10-19 Takuya Konno Electroconductive thick film composition, electrode, and solar cell formed therefrom
US7494607B2 (en) * 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7550319B2 (en) * 2005-09-01 2009-06-23 E. I. Du Pont De Nemours And Company Low temperature co-fired ceramic (LTCC) tape compositions, light emitting diode (LED) modules, lighting devices and method of forming thereof
US8063315B2 (en) * 2005-10-06 2011-11-22 Endicott Interconnect Technologies, Inc. Circuitized substrate with conductive paste, electrical assembly including said circuitized substrate and method of making said substrate
JP2007109809A (en) 2005-10-12 2007-04-26 Sharp Corp Method of manufacturing solar cell and flux for manufacturing solar cell
US8721931B2 (en) * 2005-12-21 2014-05-13 E I Du Pont De Nemours And Company Paste for solar cell electrode, solar cell electrode manufacturing method, and solar cell
CN101236997A (en) * 2007-01-29 2008-08-06 北京行者多媒体科技有限公司 Back contact layer of film silicon solar battery
CN101246923A (en) * 2007-02-14 2008-08-20 北京行者多媒体科技有限公司 Back electrode of thin film silicon photovoltaic device
US7833439B2 (en) * 2007-07-24 2010-11-16 Ferro Corporation Ultra low-emissivity (ultra low E) silver coating
US8309844B2 (en) * 2007-08-29 2012-11-13 Ferro Corporation Thick film pastes for fire through applications in solar cells
JP2009182290A (en) * 2008-02-01 2009-08-13 Mitsubishi Electric Corp Solar cell and method of manufacturing the same
CN101359564B (en) * 2008-09-16 2011-08-17 彩虹集团公司 Anti-Ag diffusion photosensitive and conductive pulp and method for preparing same
CN101931013B (en) * 2009-06-26 2012-06-20 比亚迪股份有限公司 Solar cell conductive paste and preparation method thereof
US20110048527A1 (en) * 2009-08-25 2011-03-03 E.I. Du Pont De Nemours And Company Silver thick film paste compositions and their use in conductors for photovoltaic cells
US8697476B2 (en) * 2010-04-30 2014-04-15 E I Du Pont De Nemours And Company Processes and compositions for forming photovoltaic devices with base metal buss bars
EP2579332B1 (en) * 2010-05-31 2021-02-17 Panasonic Intellectual Property Management Co., Ltd. Solar cell module and solar cell module manufacturing method
JP2013531894A (en) * 2010-06-24 2013-08-08 イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー Method for forming a silver back anode of a silicon solar cell
KR101665722B1 (en) * 2010-09-27 2016-10-24 엘지전자 주식회사 Solar cell and manufacturing method thereof
EP2448003A3 (en) * 2010-10-27 2012-08-08 Samsung Electronics Co., Ltd. Conductive paste comprising a conductive powder and a metallic glass for forming a solar cell electrode
JP5707885B2 (en) 2010-11-15 2015-04-30 三菱マテリアル株式会社 Power module substrate, power module substrate with cooler, power module, and method of manufacturing power module substrate
CN102122674B (en) * 2011-01-14 2013-01-09 中国科学院上海技术物理研究所 Crystalline silicon solar cell and preparation method thereof
US8858842B2 (en) * 2011-04-05 2014-10-14 E I Du Pont De Nemours And Company Thick film paste containing bismuth-tellurium-oxide and its use in the manufacture of semiconductor devices
JP5806304B2 (en) * 2011-05-31 2015-11-10 京セラ株式会社 Solar cell and method for manufacturing the same
JP2013051112A (en) * 2011-08-31 2013-03-14 Sharp Corp Conductive paste, electrode for semiconductor device, semiconductor device, and method for producing semiconductor device
DE112012004085T5 (en) * 2011-09-29 2014-07-31 Noritake Co., Ltd. Lead-free conductive paste composition for solar cells
EP2816593B1 (en) * 2012-02-14 2020-01-15 Mitsubishi Materials Corporation Solder joint structure, power module, heat-sink-attached substrate for power module, method for producing said substrate, and paste for forming solder underlayer
WO2013123225A1 (en) * 2012-02-17 2013-08-22 Applied Materials, Inc. Passivation film stack for silicon-based solar cells
CN103426495B (en) * 2012-05-17 2016-03-30 比亚迪股份有限公司 The preparation technology of a kind of conductive paste for solar cell and preparation method thereof and solar battery sheet
EP2787511B1 (en) * 2013-04-02 2018-05-30 Heraeus Deutschland GmbH & Co. KG Particles comprising Al and Ag in electro-conductive pastes and solar cell preparation
JP6184731B2 (en) * 2013-04-25 2017-08-23 Ｄｏｗａエレクトロニクス株式会社 Silver-bismuth powder, conductive paste and conductive film
US20150243812A1 (en) * 2013-06-20 2015-08-27 PLANT PV, Inc. Silver nanoparticle based composite solar metallization paste
US9536632B2 (en) * 2013-09-27 2017-01-03 Sunpower Corporation Mechanically deformed metal particles
US9761742B2 (en) * 2013-12-03 2017-09-12 E I Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith
US20150194546A1 (en) * 2014-01-09 2015-07-09 Heraeus Precious Metals North America Conshohocken Llc Low-silver electroconductive paste
TWI652694B (en) * 2014-01-17 2019-03-01 日商納美仕有限公司 Conductive paste and method for manufacturing semiconductor device using the same
EP2913140B1 (en) * 2014-02-26 2018-01-03 Heraeus Precious Metals North America Conshohocken LLC Molybdenum-containing glass frit for electroconductive paste composition
JP6343993B2 (en) * 2014-03-25 2018-06-20 三菱マテリアル株式会社 Power module substrate and manufacturing method thereof
KR20150121603A (en) * 2014-04-21 2015-10-29 덕산하이메탈(주) Metal Particles
WO2017091782A1 (en) * 2015-11-24 2017-06-01 Plant Pv, Inc Fired multilayer stacks for use in integrated circuits and solar cells
CN206480631U (en) * 2015-11-24 2017-09-08 普兰特光伏有限公司 Sintered multilayer with improvement intercalation and metal particle layer is stacked

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3876433A (en) * 1973-12-28 1975-04-08 Du Pont Bismuth-containing silver conductor compositions
EP2196514A1 (en) * 2007-10-03 2010-06-16 Hitachi Chemical Company, Ltd. Adhesive composition, electronic component-mounted substrate using the adhesive composition, and semiconductor device
CN102969039A (en) * 2012-10-31 2013-03-13 彩虹集团公司 Photosensitive conductive silver electrode slurry and preparation method thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO2017091782A1 *

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CN107017311A (en) 2017-08-04
TWI698888B (en) 2020-07-11
TWI613267B (en) 2018-02-01
JP2021177558A (en) 2021-11-11
TW201726830A (en) 2017-08-01
TWM544120U (en) 2017-06-21
TW201727931A (en) 2017-08-01
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CN111816346A (en) 2020-10-23
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CN111276553A (en) 2020-06-12
WO2017091782A1 (en) 2017-06-01
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JP2018535557A (en) 2018-11-29
CN106847368B (en) 2021-11-26
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CN207250530U (en) 2018-04-17
TW201832246A (en) 2018-09-01
CN107039539A (en) 2017-08-11
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CN107046067B (en) 2018-08-17

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