EP3380821A1 - Halbleiterbauelement mit einem ersten temperaturmesselement sowie verfahren zum bestimmen eines durch ein halbleiterbauelement fliessenden stromes - Google Patents

Halbleiterbauelement mit einem ersten temperaturmesselement sowie verfahren zum bestimmen eines durch ein halbleiterbauelement fliessenden stromes

Info

Publication number: EP3380821A1
Authority: EP; European Patent Office
Prior art keywords: temperature measuring; semiconductor component; measuring element; temperature; semiconductor
Prior art date: 2015-11-26
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Withdrawn

Application number

EP16777676.4A

Other languages

German (de)

English (en)

French (fr)

Inventor

Joachim Joos

Walter Von Emden

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Robert Bosch GmbH

Original Assignee

Robert Bosch GmbH

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2015-11-26

Filing date

2016-10-05

Publication date

2018-10-03

2016-10-05 Application filed by Robert Bosch GmbH filed Critical Robert Bosch GmbH

2018-10-03 Publication of EP3380821A1 publication Critical patent/EP3380821A1/de

Status Withdrawn legal-status Critical Current

Links

239000004065 semiconductor Substances 0.000 title claims abstract description 71
238000000034 method Methods 0.000 title claims abstract description 11
239000000758 substrate Substances 0.000 claims abstract description 10
238000009529 body temperature measurement Methods 0.000 claims description 2
238000005259 measurement Methods 0.000 description 9
230000008901 benefit Effects 0.000 description 4
238000011161 development Methods 0.000 description 4
230000018109 developmental process Effects 0.000 description 4
238000011156 evaluation Methods 0.000 description 4
238000012544 monitoring process Methods 0.000 description 4
RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
230000000903 blocking effect Effects 0.000 description 3
238000004364 calculation method Methods 0.000 description 3
229910052802 copper Inorganic materials 0.000 description 3
239000010949 copper Substances 0.000 description 3
230000005669 field effect Effects 0.000 description 3
230000004888 barrier function Effects 0.000 description 2
238000010276 construction Methods 0.000 description 2
230000006378 damage Effects 0.000 description 2
238000013461 design Methods 0.000 description 2
238000004519 manufacturing process Methods 0.000 description 2
238000004088 simulation Methods 0.000 description 2
239000008186 active pharmaceutical agent Substances 0.000 description 1
239000000853 adhesive Substances 0.000 description 1
230000001070 adhesive effect Effects 0.000 description 1
230000032683 aging Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000015556 catabolic process Effects 0.000 description 1
230000001419 dependent effect Effects 0.000 description 1
230000004069 differentiation Effects 0.000 description 1
238000005516 engineering process Methods 0.000 description 1
230000007717 exclusion Effects 0.000 description 1
230000004907 flux Effects 0.000 description 1
238000009434 installation Methods 0.000 description 1
239000012212 insulator Substances 0.000 description 1
230000010354 integration Effects 0.000 description 1
229910044991 metal oxide Inorganic materials 0.000 description 1
150000004706 metal oxides Chemical class 0.000 description 1
229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
229920005591 polysilicon Polymers 0.000 description 1
230000008569 process Effects 0.000 description 1
238000004080 punching Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910000679 solder Inorganic materials 0.000 description 1
230000002123 temporal effect Effects 0.000 description 1
230000036962 time dependent Effects 0.000 description 1

Classifications

- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes

Definitions

the current is measured for example by a shunt or a magnetic sensor. This is complicated and expensive. If the phase current is measured by means of a shunt, additional area on the DBC (Direct Bonded Copper) or on the DBC (Direct Bonded Copper) or on the DBC (Direct Bonded Copper)
Temperature measuring element is arranged on the substrate.
Semiconductor device may be, for example, a MOSFET, an IGBT or other power semiconductor.
the substrate may be a semiconductor substrate, For example, be silicon, another semiconductor substrate or a silicon-on-insulator (SOI) substrate.
SOI silicon-on-insulator
Semiconductor component flowing current basically includes the following steps:
An inventive control device for a vehicle comprises at least one inventive semiconductor device.
Temperature measuring element be thermally coupled.
the temperature can be determined with a small design effort for the temperature measuring elements. This saves installation space, power loss and costs for external components and, with appropriate design, can improve the response time and accuracy of current monitoring.
Temperature measuring conceivable to implement the invention. Likewise, the simultaneous use of monolithic integrated and external temperature measuring elements, such as thermistors, is possible. Due to the manufacturing advantages, however, are all preferred
a finite thermal capacitance and a finite thermal resistance exist between the first temperature measuring element and the second temperature measuring element.
the current power loss in the semiconductor device can then be determined relatively accurately if the first temperature and the second temperature are used as input variables for the calculation.
Such an embodiment has the advantage that the structure can be connected flexibly from the outside further. Furthermore, the voltage required for determining the temperature can thus be measured in a simple manner, for example by connecting the pads to an evaluation circuit such as, for example, the system ASIC.
the first temperature measuring element and the second temperature measuring element are connected in series.
Temperature measuring elements can then be fed by a common power source and flowed through by the same current.
the optionally existing further temperature measuring elements can be connected in series with the first and second temperature measuring element and energized with a single sense current.
the inventive method is suitable to the current temperature, power dissipation and current values of a circuit breaker and

Landscapes

Physics & Mathematics (AREA)
General Physics & Mathematics (AREA)
Semiconductor Integrated Circuits (AREA)
Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Testing Of Individual Semiconductor Devices (AREA)
Measurement Of Current Or Voltage (AREA)

EP16777676.4A 2015-11-26 2016-10-05 Halbleiterbauelement mit einem ersten temperaturmesselement sowie verfahren zum bestimmen eines durch ein halbleiterbauelement fliessenden stromes Withdrawn EP3380821A1 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
DE102015223470.3A DE102015223470A1 (de)	2015-11-26	2015-11-26	Halbleiterbauelement mit einem Substrat und einem ersten Temperaturmesselement sowie Verfahren zum Bestimmen eines durch ein Halbleiterbauelement fließenden Stromes sowie Steuergerät für ein Fahrzeug
PCT/EP2016/073733 WO2017089018A1 (de)	2015-11-26	2016-10-05	Halbleiterbauelement mit einem ersten temperaturmesselement sowie verfahren zum bestimmen eines durch ein halbleiterbauelement fliessenden stromes

Publications (1)

Publication Number	Publication Date
EP3380821A1 true EP3380821A1 (de)	2018-10-03

Family

ID=57083305

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
EP16777676.4A Withdrawn EP3380821A1 (de)	2015-11-26	2016-10-05	Halbleiterbauelement mit einem ersten temperaturmesselement sowie verfahren zum bestimmen eines durch ein halbleiterbauelement fliessenden stromes

Country Status (6)

Country	Link
EP (1)	EP3380821A1 (zh)
JP (1)	JP6824271B2 (zh)
CN (1)	CN108291843B (zh)
DE (1)	DE102015223470A1 (zh)
TW (1)	TWI721045B (zh)
WO (1)	WO2017089018A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN110534509A (zh) *	2018-05-24	2019-12-03	苏州东微半导体有限公司	半导体功率器件
DE102022204800B3 (de) *	2022-05-16	2023-09-28	Volkswagen Aktiengesellschaft	Vorrichtung und Verfahren zur Bestimmung eines Alterungszustandes mindestens eines Leistungshalbleiterschalters

Family Cites Families (24)

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JPS5989229U (ja) *	1982-12-09	1984-06-16	株式会社東芝	極低温の計測装置
JPH03187254A (ja) *	1989-12-15	1991-08-15	Mitsubishi Electric Corp	集積回路の熱的保護回路
GB2248151A (en) *	1990-09-24	1992-03-25	Philips Electronic Associated	Temperature sensing and protection circuit.
GB9716838D0 (en) *	1997-08-08	1997-10-15	Philips Electronics Nv	Temperature sensing circuits
GB9818044D0 (en) *	1998-08-20	1998-10-14	Koninkl Philips Electronics Nv	Power transistor device
JP3319406B2 (ja) *	1998-09-18	2002-09-03	日本電気株式会社	比較増幅検出回路
US6137165A (en) *	1999-06-25	2000-10-24	International Rectifier Corp.	Hybrid package including a power MOSFET die and a control and protection circuit die with a smaller sense MOSFET
JP2002048651A (ja) *	2000-08-04	2002-02-15	Nippon Precision Circuits Inc	半導体温度検出方法およびその回路
US6991367B2 (en) *	2003-11-04	2006-01-31	Raytheon Company	Integrated thermal sensor for microwave transistors
WO2006108444A1 (en) *	2005-04-13	2006-10-19	Freescale Semiconductor, Inc	Protection of an integrated circuit and method therefor
US7333904B2 (en)	2005-08-26	2008-02-19	Delphi Technologies, Inc.	Method of determining FET junction temperature
DE102006001874B4 (de) *	2006-01-13	2012-05-24	Infineon Technologies Ag	Verfahren und Vorrichtung zur Strom- und Temperaturmessung in einer leistungselektronischen Schaltung
JP5226248B2 (ja) *	2006-08-02	2013-07-03	ルネサスエレクトロニクス株式会社	温度検出回路及び半導体装置
DE102008055696A1 (de) *	2008-01-25	2009-07-30	Continental Teves Ag & Co. Ohg	Elektronische Schaltungseinrichtung zur Erfassung eines Detektionselementstroms und/oder einer Temperatur in diesem Detektionselement
US7940034B2 (en)	2008-05-19	2011-05-10	Infineon Technologies Austria Ag	Apparatus for detecting a state of operation of a power semiconductor device
US8044674B2 (en) *	2009-11-06	2011-10-25	Infineon Technologies Ag	Semiconductor device with thermal fault detection
DE102011001185A1 (de)	2011-03-10	2012-09-13	Zf Lenksysteme Gmbh	Strommessung ohne Shunt-Widerstände
DE102012102788A1 (de) *	2012-03-30	2013-10-02	Zf Lenksysteme Gmbh	SPERRSCHICHTTEMPERATURMESSUNG EINES LEISTUNGS-MOSFETs
US9658118B2 (en) *	2012-11-16	2017-05-23	Linear Technology Corporation	Precision temperature measurement devices, sensors, and methods
JP2014128053A (ja) *	2012-12-25	2014-07-07	Asahi Kasei Electronics Co Ltd	トランジスタの駆動装置及びその駆動方法
JP6171599B2 (ja) *	2013-06-11	2017-08-02	サンケン電気株式会社	半導体装置及びその制御方法
US9136199B2 (en) *	2013-07-26	2015-09-15	Infineon Technologies Ag	Monitoring and controlling temperatures in a semiconductor structure
DE102014100122B3 (de) *	2014-01-08	2015-04-16	Zf Lenksysteme Gmbh	Ermittlung der Sperrschichttemperatur eines Fet durch die Bodydiode
US10132696B2 (en) *	2014-07-11	2018-11-20	Infineon Technologies Ag	Integrated temperature sensor for discrete semiconductor devices

2015
- 2015-11-26 DE DE102015223470.3A patent/DE102015223470A1/de not_active Withdrawn
2016
- 2016-10-05 CN CN201680069206.7A patent/CN108291843B/zh active Active
- 2016-10-05 WO PCT/EP2016/073733 patent/WO2017089018A1/de active Application Filing
- 2016-10-05 JP JP2018527230A patent/JP6824271B2/ja active Active
- 2016-10-05 EP EP16777676.4A patent/EP3380821A1/de not_active Withdrawn
- 2016-11-24 TW TW105138550A patent/TWI721045B/zh active

Also Published As

Publication number	Publication date
CN108291843A (zh)	2018-07-17
TW201723447A (zh)	2017-07-01
CN108291843B (zh)	2021-04-13
TWI721045B (zh)	2021-03-11
JP2018536858A (ja)	2018-12-13
DE102015223470A1 (de)	2017-06-01
WO2017089018A1 (de)	2017-06-01
JP6824271B2 (ja)	2021-02-03

Legal Events

Date	Code	Title	Description
2016-12-14	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: UNKNOWN
2017-06-02	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE
2018-08-31	PUAI	Public reference made under article 153(3) epc to a published international application that has entered the european phase	Free format text: ORIGINAL CODE: 0009012
2018-08-31	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE
2018-10-03	17P	Request for examination filed	Effective date: 20180626
2018-10-03	AK	Designated contracting states	Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR
2018-10-03	AX	Request for extension of the european patent	Extension state: BA ME
2019-03-06	DAV	Request for validation of the european patent (deleted)
2019-03-06	DAX	Request for extension of the european patent (deleted)
2020-01-14	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2020-02-19	17Q	First examination report despatched	Effective date: 20200117
2020-04-29	RAP1	Party data changed (applicant data changed or rights of an application transferred)	Owner name: ROBERT BOSCH GMBH
2020-05-09	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2021-07-30	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: EXAMINATION IS IN PROGRESS
2023-11-24	STAA	Information on the status of an ep patent application or granted ep patent	Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN
2023-12-27	18D	Application deemed to be withdrawn	Effective date: 20230803

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