EP2928574A1 - Multi-stage crystallisation process and apparatus to purify a compound - Google Patents
Multi-stage crystallisation process and apparatus to purify a compoundInfo
- Publication number
- EP2928574A1 EP2928574A1 EP13811199.2A EP13811199A EP2928574A1 EP 2928574 A1 EP2928574 A1 EP 2928574A1 EP 13811199 A EP13811199 A EP 13811199A EP 2928574 A1 EP2928574 A1 EP 2928574A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- crystallization
- unit
- suspension
- compound
- ppb
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002425 crystallisation Methods 0.000 title claims abstract description 185
- 238000000034 method Methods 0.000 title claims abstract description 57
- 230000008569 process Effects 0.000 title claims abstract description 44
- 150000001875 compounds Chemical class 0.000 title claims abstract description 43
- 230000008025 crystallization Effects 0.000 claims abstract description 180
- 239000000725 suspension Substances 0.000 claims abstract description 73
- 238000003860 storage Methods 0.000 claims abstract description 36
- 239000013067 intermediate product Substances 0.000 claims abstract description 13
- 238000000746 purification Methods 0.000 claims abstract description 12
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 62
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 40
- 229910052752 metalloid Inorganic materials 0.000 claims description 34
- 239000012535 impurity Substances 0.000 claims description 32
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 31
- 239000000155 melt Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 28
- 239000002184 metal Substances 0.000 claims description 28
- 239000007788 liquid Substances 0.000 claims description 22
- 150000002738 metalloids Chemical class 0.000 claims description 16
- 230000003068 static effect Effects 0.000 claims description 15
- 239000011552 falling film Substances 0.000 claims description 9
- 238000000926 separation method Methods 0.000 claims description 9
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 8
- 229910052785 arsenic Inorganic materials 0.000 claims description 8
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 8
- 229910052796 boron Inorganic materials 0.000 claims description 8
- 239000002904 solvent Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000005406 washing Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 description 44
- 239000012452 mother liquor Substances 0.000 description 25
- -1 metalloid ions Chemical class 0.000 description 18
- 239000000047 product Substances 0.000 description 18
- 230000000694 effects Effects 0.000 description 10
- 238000011084 recovery Methods 0.000 description 10
- 238000007792 addition Methods 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- 239000012530 fluid Substances 0.000 description 6
- 238000004949 mass spectrometry Methods 0.000 description 6
- 238000009826 distribution Methods 0.000 description 5
- 239000002253 acid Substances 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 108010001267 Protein Subunits Proteins 0.000 description 3
- 230000003139 buffering effect Effects 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910021645 metal ion Inorganic materials 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000012264 purified product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 238000001479 atomic absorption spectroscopy Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- HJMZMZRCABDKKV-UHFFFAOYSA-N carbonocyanidic acid Chemical compound OC(=O)C#N HJMZMZRCABDKKV-UHFFFAOYSA-N 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000002354 inductively-coupled plasma atomic emission spectroscopy Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000012432 intermediate storage Methods 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000006722 reduction reaction Methods 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000003950 stripping voltammetry Methods 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003573 thiols Chemical group 0.000 description 1
- 230000032258 transport Effects 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0059—General arrangements of crystallisation plant, e.g. flow sheets
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/0036—Crystallisation on to a bed of product crystals; Seeding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D9/00—Crystallisation
- B01D9/004—Fractional crystallisation; Fractionating or rectifying columns
- B01D9/0045—Washing of crystals, e.g. in wash columns
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/16—Oxyacids of phosphorus; Salts thereof
- C01B25/18—Phosphoric acid
- C01B25/234—Purification; Stabilisation; Concentration
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B25/00—Phosphorus; Compounds thereof
- C01B25/16—Oxyacids of phosphorus; Salts thereof
- C01B25/18—Phosphoric acid
- C01B25/234—Purification; Stabilisation; Concentration
- C01B25/237—Selective elimination of impurities
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/80—Compositional purity
Definitions
- the invention relates to a process to purify a compound in accordance with the preambles of the independent claim 1 and an apparatus to purify a compound in accordance with the preambles of the independent claim 8.
- a compound, for instance high purity phosphoric acid, purified from an impure compound, for instance a phosphoric acid feed, is suitable, in particular, for use in the semiconductor industry and in other electronics industries, e.g. as etchant.
- etchant e.g. etchant
- Typical metallic impurities include potassium, sodium, iron, aluminum, and magnesium
- typical metalloid impurities include arsenic and boron.
- the Global Process Chemicals Committee and the North American Process Chemicals Committee provide the industry with the specifications for such impurities in their document SEMI C36-0301 - Specifications for Phosphoric Acid.
- the compound in particular high purity phosphoric acid is required for various other uses, as well. Its unique ability to resist oxidation, reduction and evaporation makes it particularly useful for high purity industrial and
- a crystallization step is defined as comprising one or more crystallization stages. Therefore a layer crystallization step comprises one or more layer crystallization stages, and a suspension crystallization step comprises one or more
- purification apparatuses or crystallization units may comprise multiple crystallization sub-units such as either multiple layer crystallization or multiple suspension crystallization sub-units.
- a crystallization unit is defined as comprising one or more crystallization sub-units. Therefore a layer crystallization unit comprises one or more layer crystallization sub-units, and a suspension crystallization unit comprises one or more suspension crystallization sub-units. Additional information on crystallizers and their operation is disclosed in
- US patent 8,034,312 describes a method for the purification of high purity phosphoric acid by suspension crystallization.
- the high purity phosphoric acid is crystallized as a hemi-hydrate form and subsequent separation of such crystals in a wash-column produces a high purity acid/water solution that has been depleted of most of the metals, metalloids, and impurities other than water.
- a phosphoric acid rich feed liquor into a high purity phosphoric acid hemi-hydrate and a mother liquor containing almost all impurities that were originally present in the feed.
- US patent 8,034,312 describes the effect of water addition on the viscosity of phosphoric acid.
- An undesirable consequence of the described method is the negative effect of the water addition on the wash column temperature difference, deltaT.
- patent 8,034,312 describes a positive effect of water addition on wash column effectiveness with respect to washing due to larger crystals and lower viscosity of the mother liquor. It is also a fact that the increased deltaT leads to lower porosity in the washed part of the crystal bed in the wash column. This porosity has a negative effect on the wash column capacity. In practice this means that the increased effectiveness must be balanced against the need for more equipment.
- the dependent claims relate to particularly advantageous embodiments of the invention. According to the invention, this is achieved by a process to purify a compound comprising a suspension crystallization step. Additionally the process comprises a layer crystallization step and a storage step of an intermediate product obtained from the layer crystallization step before its further purification in the suspension crystallization step. Analogous to the crystallization steps, the storage step may comprise one or more stages.
- an apparatus for purifying a compound comprising a suspension crystallization unit.
- the apparatus comprises a layer crystallization unit and a storage unit located after the layer crystallization unit and before the suspension crystallization unit.
- the storage unit may comprise one or more sub-units.
- the compound is purified by a combination of layer and suspension
- the apparatus for purifying a compound comprises one or more suspension crystallization sub-units, one or more layer crystallization sub-units and one or more storage sub-units located after the one or more layer crystallization sub-units and before the one or more suspension crystallization sub-units.
- An intermediate product may be conveyed from one unit or sub-unit to another by a conveyor for instance a pump and a pipe.
- the process and the apparatus for purifying the compound, in particular high purity phosphoric acid use the fact that the separation efficiency for different metal or metalloid ion impurities is very different for the different crystallization technologies.
- layer crystallization few nuclei are formed and grown to large crystals whereas in suspension crystallization, relative to layer crystallization, an enormous number of nuclei are formed continuously which are then grown to relatively small crystals.
- suspension crystallization no matter how many suspension crystallization stages are applied, for some specific metal or metalloid ions no further reduction is possible below a certain metal or metalloid ion
- one of the advantages due to usage of the storage step and unit is that it makes it possible to combine in one process the advantages of layer crystallization with those of suspension crystallization.
- the process and apparatus of the invention will be suitable to produce ultra pure compounds from an impure feed.
- the final product is essentially the ultra pure compound.
- the compound in the invention is not specifically limited, and it may be inorganic, organic or organometallic in nature. Particulary preferred compounds will be those that readily form complexes with metal or metalloid ions such as those compounds having acidic groups or basic groups. Some examples of compounds readily forming metal complexes are those containing sulfonate, phophonate, amine, cyano, carboxylate, oxylate, acetate, thiol functional groups. Inorganic and organic acids are also compounds that readily form metal complexes.
- the compound is phosphoric acid. Due to the fact that phosphoric acid, in particular high purity phosphoric acid or electronic grade phosphoric acid, has very special specifications (e.g. according to SEMI C36-0301 ) to come down to the required ppb levels of impurities, application of combined layer and suspension crystallization and storage steps are very advantageous. Furthermore, the process and apparatus are
- the purified compound contains one or more metallic or metalloid impurities, preferably arsenic and/or boron, wherein the concentration of each metal or metalloid impurity is less than 1000 ppb, preferably less than 250 ppb, more preferably 100 ppb, most preferably 50 ppb.
- concentration of each metal or metalloid impurity is less than 1000 ppb, preferably less than 250 ppb, more preferably 100 ppb, most preferably 50 ppb.
- a variety of methods for measuring inorganic impurities such as metals and metalloids are known in the art. Such methods include mass spectrometry, atomic absorption spectroscopy (AAS), Inductively Coupled Plasma-Atomic Emission
- ICP-AES ICP-AES
- stripping voltammetry ion chromatography
- ion chromatography concentrations of these impurities according to the present invention are measured by mass spectrometry.
- the application of mass spectroscopy for the analysis of metallic and metalloid impurities is well-known in the art, for example, as described in Applications of Inorganic Mass Spectrometry, by J.R. de Laeter, published by Wiley in 2001 , ISBN-13: 978-0471345398.
- a further embodiment of the invention is that the process comprises one layer crystallization stage and two or more, preferably three, suspension
- the compound in particular high purity phosphoric acid is known for its capability to form complexes with metal and metalloid ions and such complexes serve as nucleation sources thus causing a lower limit for the metal and metalloid ion concentration in the molten crystal for suspension crystallization.
- Layer crystallization showed a stable decrease in such metal and metalloid ion concentration from stage to stage. Therefore it is an advantage to carry out one or more layer crystallization stages before the two or more, preferably three suspension crystallization stages.
- This embodiment describes a configuration that has been tested showing the effect of the method on the metal and metalloid impurity concentrations in the example.
- the one or more layer crystallization stages are carried out in a static crystallization unit or a falling film crystallization unit, preferably a static crystallization unit.
- the one or more layer crystallization sub-units are static
- crystallization sub-units or falling film crystallization sub-units preferably static crystallization sub-units.
- the various crystallization units or sub-units can be equipped for instance with appropriate buffer vessel(s) and fluid connections so that additional further crystallization stages may be carried out within the same unit or sub-units.
- the various product and byproduct streams from the crystallization units or sub-units may be conveniently controlled by means of the mass balance in collecting vessels directly connected to the crystallization unit or sub-unit.
- the heating and cooling requirements of the crystallization units and sub-units can vary for instance as a function of time, and energy buffer systems may be
- crystallization units and sub-units may be conveniently controlled by a computer system using level and temperature measurement instruments, as well as on/off or control valves.
- an outlet of the layer crystallization unit is in fluid communication with the inlet of the storage unit and an outlet of the storage unit is in fluid
- Fluid communication means that a conveyor, for instance a pump and / or a pipe, transports the fluid between the layer crystallization unit outlet to the suspension crystallization unit inlet and / or between the storage unit.
- the temperature of the crystallization in a specific crystallization unit or sub-unit as referred to in the specification of this application is expressed in degrees Celsius (°C), and it is measured by measuring the melting point of the mother liquor stream removed from the specific crystallization unit or sub-unit. Due to a high viscosity of the compound the static crystallization unit is preferred. Static crystallization therefore is an economic method of purifying on a large industrial scale.
- Falling film crystallization units and their operation are well-known in the art, for example, as disclosed in US Re. 32,241 or US 3,621 ,664. Unless indicated otherwise, conventional falling film crystallization units may be used and operated as known in the art. Static crystallization units and their operation are well-known in the art, for example, as disclosed in Sulzer Technical Review 2/99 pp. 8 - 1 1 , Sulzer Technical Review 1/2006 pp. 4 - 6, or US 6,145,340.
- any suspension crystallization step present in the process comprises a solid-liquid separation and washing stage, and wherein the solid-liquid separation and washing stage is carried out in a wash column having a melt circuit, preferably a packed bed wash column.
- a solvent is added to the melt circuit, wherein the solvent is preferably water.
- Wash columns have a very high separation efficiency, for instance crystals going to the wash column are recovered as a product. Centrifuges wash cake with part of product which is recycled to crystallizing step (10 - 15%) and thus requires a higher crystallizer capacity.
- the wash liquid in a wash column is not mixed with mother liquor in the wash column.
- the method according to the invention improves wash column effectiveness and capacity simultaneously by adding the water not to the mother liquor as in Patent 8,034,312 but to the melt loop using a metering pump.
- the viscosity lowering effect is now not restricted to the mother liquor (important for the non- washed part of the crystal bed) but also occurring for the wash liquid (important for the washed part of the bed).
- This general lowering of viscosity in the entire wash column crystal bed causes a capacity increase.
- An additional benefit is that the total amount of water added can be less.
- the extra water added to the wash liquid (for example the wash liquid may contain 8.4 % of water in one embodiment) will not re-crystallize at the wash front (one Mol of water will crystallize at the wash front together with two Moles of phosphoric acid to form one Mole new hemi hydrate crystal) and therefore be mixed with the mother liquor in the unwashed part of the crystal bed.
- the mixing of mother liquor between the crystals in the unwashed part of the crystal bed with mother liquor in the bulk is a slow process and therefore the concentration of water in the mother liquor between the crystals in the crystal bed in equilibrium conditions (conditions after reaching steady state operation) will be higher than the water concentration in the mother liquor present in the crystallizer slurry.
- the layer crystallization unit is a static crystallization unit or falling film crystallization unit, preferably a static crystallization unit.
- a falling film crystallizer is an option for layer crystallization but only in a small range of high viscosity liquids.
- the static crystallizers is preferred because of its large operating window.
- the apparatus additionally comprises one or more wash columns for a melt circuit, preferably packed bed wash columns. Furthermore the melt circuit has an inlet for adding a solvent.
- the suspension crystallization unit will have a solid-liquid separator sub-unit. In a preferred embodiment the solid-liquid separator unit comprises one or more wash columns with a melt circuit, preferably packed bed wash columns.
- the process described above is conducted and applied in the apparatus in particular in the one ore more wash columns.
- the apparatus for the production of electronic grade phosphoric acid as specified by SEMI C36-0301 .
- FIG. 5 the crystal bed in the wash column and the adjacent components in detail.
- Figure 1 shows a block diagram showing the possible combinations of layer and suspension crystallization steps and stages according to the invention.
- N represents the total number of crystallization stages.
- n susp ension represents the number of stages using suspension crystallization technology, ni aye r the number of stages using layer crystallization technology and n st0 rage the number of stages using storage technology.
- the sequence of the technologies and the number of stages is a function of the feed composition, the recovery requirement and the required product specification.
- a stage does not necessarily represent hardware in the form of a crystallization unit or sub-unit. It is possible to carry out one or more stages in the same unit. For example one may carry out multiple stages in multiple units or one may carry out multiple stages in the same unit, making use of intermediate storage steps/units.
- buffer tanks are required between the various steps and stages. The process is carried out with an apparatus according to the invention.
- stream 10 is the feed liquid.
- the feed liquid has for instance less than 1 wt% impurities besides phosphoric acid and water.
- Stream 12 is the final purified compound in particular high purity phosphoric acid. Typically all metal and metalloid impurities, preferably arsenic and/or boron, are less than 100 ppb.
- Stream 13 is the reject stream from the first step and, normally also the plant reject ("plant" meaning to be the combination of all units and sub-units and their operations), however, it is possible that some reject is withdrawn from the plant between stages (represented in Fig. 1 by stream 13a). The last option would lower the recovery of the total crystallization operation.
- the storage step of the invention is embodied such that it enables the
- the continuous suspension crystallization step to be continuously fed by a product stream emitted from the batch layer crystallization step.
- the storage step will take place in a storage unit which therefore acts a buffering tank between the batch layer crystallization and the continuous suspension crystallization.
- the storage unit is not specifically limited as to size, volume or construction, and the optimum volume will depend on the detailed natures of the layer crystallization step and unit and the suspension crystallization step and unit.
- the volume of the storage unit will generally be sufficient such that it may hold all of the intermediate product produced by the layer crystallization step and also hold enough feed to maintain the continuous operation of the suspension crystallization unit.
- smaller capacity layer crystallization units may not themselves require a large capacity storage unit, but more frequent batch layer
- crystallization steps may be required as a result to produce sufficient buffering volume to supply a given capacity suspension crystallization unit.
- larger capacity layer crystallization units may require a larger capacity storage unit but less frequent batch crystallization steps.
- high throughput suspension crystallization units and high suspension crystallization production rates will tend to require larger capacity storage units and also more frequent batch layer crystallization steps or larger capacity layer crystallization units.
- Lower throughput suspension crystallization units or lower suspension crystallization production rates will be able to make use of smaller volume storage units.
- One skilled in the art will thus understand how to determine the appropriate volume requirements for the storage unit and storage step based on the relative flow and production rates and capacities of the layer and
- suspension crystallization units and steps At the start of the purification process, one will typically begin running the layer crystallization unit batchwise into the storage unit to build sufficient buffering capacity in the storage unit prior to starting the suspension crystallization unit.
- FIG. 2 shows a block diagram of a first embodiment of the crystallization process according to the invention which represents one of the tested embodiments.
- the embodiment has a layer crystallization stage consisting of one stage and is followed by a suspension crystallization stage consisting of three equal suspension crystallization stages.
- the layer crystallization stage is carried out using a layer crystallization unit 21 which is a static crystallization unit or a falling film crystallization unit.
- the suspension crystallization stage is carried out using a suspension crystallization unit 22.
- the storage stage is carried out using a storage unit 23.
- the streams at the layer crystallization unit are as follows, stream 10 is the feed liquid, stream 1 1 a the intermediate product stream of stage 1 to stage 2 and stream 18 is the reject stream of stage 1 .
- the storage unit 23 at stage 2 only stores the intermediate product stream 1 1 a.
- the suspension crystallization unit 22 for stage 3 is fed by a intermediate product stream 1 1 a from stage 1 , and it emits reject stream 17 and intermediate product stream 1 1 b for feeding the suspension crystallization unit 22 for stage 5, at which it is possible to store the intermediate product stream 1 1 b at stage 4 in a storage unit 23.
- the following suspension crystallization units 22 for stages 5 and 7 are fed by the intermediate product streams 1 1 b and 1 1 c of the previous unit 22 from stages 4 and 6 respectively.
- each of these units 22 emits a reject stream 16 and 15, and intermediate product stream 1 1 c and product stream12.
- the product stream 12 is then the final purified product stream of the process of this embodiment.
- the various crystallization units can be equipped for instance with appropriate buffer vessel(s) and fluid connections so that additional further workflow stages may be carried out within the same unit.
- Figure 3 is an example embodiment of a piston type wash column 5, as described for example in US patent 6,719,954 , with a melt loop according to the invention where a metering pump 56 is used to pump a specific amount of water to the melt loop.
- the invention is not limited to the use of a piston type wash column in the suspension crystallization stage.
- Other wash column types such as for example described in US patent 4,734,102, can be used and these different types can be installed with the melt loop on top or at the bottom.
- the invention limited by the use of a metering pump 56 to introduce water into the melt loop.
- the invention includes any other means of controlled addition of water to the melt loop.
- Item 63 is the top part of wash column cylinder with the washed packed bed of crystals.
- the crystal bed is disintegrated by a rotating scraper disc 62 and the scraped crystals are mixed with a liquid stream consisting of melted crystals and introduced in the scraper head 61 through conduit 513.
- the crystal bed has a washed part (with wash liquid between the crystals) 63 and an unwashed part (with mother liquor between the crystals) 64.
- the crystal bed is enclosed by a cylinder 6 and a piston filter 65.
- the mixture of crystals and liquid leaves the scraper head through conduit 512 which leads to a heat exchanger 52, where enough heat is passed to the mixture to melt the crystals.
- Conduit 51 1 leads the mixture to the suction side of the melt loop pump 55.
- a product discharge valve 57 is situated on the suction side of the melt loop pump. This valve is operated by the wash column control system and product is periodically discharged to the product storage location through conduit 516.
- a metering pump 56 is introducing water into the melt loop through conduit 514. On the suction side of the metering pump is a conduit 515 that connects the pump with a source of water (for example a water feed tank). The location where water is introduced in the melt loop is between the connection to product discharge valve 57 and the suction side of the melt loop pump 55, to insure good mixing of the water with the mixture before the product leaves the melt loop through the product discharge valve 57.
- wash liquid molten hemi hydrate
- the small crystal bed zone between the washed 63 and un-washed 64 part is called the wash front.
- Crystals and liquid in the un-washed part 64 of the crystal bed have the temperature of the slurry feed to the wash column 5 and the crystals and liquid in the washed part 63 are at the melting point temperature of pure hemi hydrate.
- This temperature difference causes the wash liquid to crystallize on the outside of the un-washed crystals.
- the released heat of crystallization warms the crystals to the melting point of the pure hemi hydrate.
- water is added to the mixture in the melt loop.
- the wash liquid is now molten hemi hydrate with extra water and a lower viscosity that that of pure molten hemi-hydrate.
- the extra water will mix with the mother liquor and reduces the viscosity of the mother liquor.
- FIG. 4 shows the scraper side of piston type wash column together with the melt loop as described above.
- Figure 5 shows the crystal bed in the wash column and the adjacent components as described above.
- Table 1 shows the analysis results for two different metalloid ion impurities viz. one, Arsenic (As), that is separated better with layer crystallization and another one, Boron (B), that is better separated with suspension crystallization.
- the separation is quantified by the distribution coefficient which is defined here as concentration of impurity component in reject divided by the concentration of the same impurity component in the product.
- the analysis illustrates the relatively high Boron reduction per stage in suspension crystallization when compared with layer crystallization and the opposite for Arsenic.
- the concentration of metalloid ion is expressed as parts per billion (ppb).
- ppb parts per billion
- the example further demonstrates that the process and apparatus of the invention may be used to reduce the concentration of arsenic and/or boron impurities to less than 1000 ppb, preferably less than 250 ppb, more preferably 100 ppb, most preferably 50 ppb.
- Advantageously adding water to the melt loop also increases the water concentration in the unwashed part of the mother liquor. Additionally the effect on lowering the viscosity of adding a specific quantity of water to the melt loop has a greater effect than adding the same amount of water to the crystallization.
- the values in table 2 represent the water concentration of the mother liquor that is present between the crystals in the un-washed part of the crystal bed.
- the ML refreshment is a measure for the rate with which the mother liquor in the un-washed crystal bed is replaced by mother liquor in the feed to the wash column.
- the measured capacity increase of 20% with the addition of 1 wt% water per weight of produced hemi-hydrate from the wash column supports the assumption (exact values are not available) that the ML refreshment is lower than approximately 10%.
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Abstract
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EP13811199.2A EP2928574B1 (en) | 2013-01-14 | 2013-12-18 | Multi-stage crystallisation process and apparatus to purify a compound |
PL13811199T PL2928574T3 (en) | 2013-01-14 | 2013-12-18 | Multi-stage crystallisation process and apparatus to purify a compound |
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EP13811199.2A EP2928574B1 (en) | 2013-01-14 | 2013-12-18 | Multi-stage crystallisation process and apparatus to purify a compound |
PCT/EP2013/077079 WO2014108285A1 (en) | 2013-01-14 | 2013-12-18 | Multi-stage crystallisation process and apparatus to purify a compound |
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US (1) | US9597609B2 (en) |
EP (1) | EP2928574B1 (en) |
JP (1) | JP6134811B2 (en) |
KR (1) | KR102228425B1 (en) |
CN (2) | CN105026007B (en) |
ES (1) | ES2895952T3 (en) |
HU (1) | HUE056370T2 (en) |
PL (1) | PL2928574T3 (en) |
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EP3103539A1 (en) * | 2015-06-11 | 2016-12-14 | Sulzer Chemtech AG | Method and apparatus for purifying a mixture comprising oil and wax |
CN111153917A (en) * | 2019-10-12 | 2020-05-15 | 湖北省宏源药业科技股份有限公司 | Purification process of lithium bis (oxalato) borate |
CN112661722B (en) * | 2021-01-30 | 2024-04-02 | 蔚林新材料科技股份有限公司 | Novel green cleaning process for refining 2-mercaptobenzothiazole |
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EP0616998A1 (en) * | 1993-03-26 | 1994-09-28 | Sulzer Chemtech AG | Process and plant for the purification of acrylic acid |
US20110105791A1 (en) * | 2006-08-22 | 2011-05-05 | Franz-Felix Kuppinger | Process for preparing acrylic acid purified by crystallization from hydroxypropionic acid and apparatus therefore |
EP2471739A1 (en) * | 2011-01-04 | 2012-07-04 | Solvay Sa | Process for the purification of phosphoric acid |
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AT279547B (en) | 1967-04-14 | 1970-03-10 | Buchs Metallwerk Ag | Method and device for separating or purifying molten, liquid or dissolved substances by fractional crystallization |
JPS5373507A (en) | 1976-12-10 | 1978-06-30 | Mitsubishi Gas Chem Co Inc | Crystallization of pentaerythritol |
NL8202517A (en) | 1982-06-22 | 1984-01-16 | Tno | DEVICE FOR COMPACTING A SUSPENSION. |
ES2278388T3 (en) | 1997-07-16 | 2007-08-01 | Sulzer Chemtech Ag | PROCEDURE FOR FRACTIONED CRYSTALLIZATION OF SUBSTANCES, APPROPRIATE CRYSTALLIZER TO PERFORM THE PROCEDURE AND USE OF THE CRYSTALLIZER. |
DE10003498A1 (en) | 2000-01-27 | 2001-08-02 | Basf Ag | (Meth)acrylic acid purification using a combination of two or more different dynamic (especially suspension and layer) crystallisation processes |
NL1017956C2 (en) | 2001-04-27 | 2002-11-05 | Korporam B V | Multi-stage countercurrent crystallizer. |
DE10122788A1 (en) | 2001-05-10 | 2002-06-06 | Basf Ag | Preparation of purified melt of monomer(s) involves forming suspension, crystallizing, mechanically separating suspended monomer crystals and further crystallizing and separating |
TW200413300A (en) * | 2002-09-18 | 2004-08-01 | Sulzer Chemtech Ag | Process for purifying alkylated phenols |
CN101511441B (en) * | 2006-09-12 | 2012-02-22 | 苏舍化学技术有限公司 | Method of purifying ionic liquids |
JP5242061B2 (en) * | 2007-02-08 | 2013-07-24 | 日本リファイン株式会社 | Method and apparatus for obtaining purified phosphoric acid from aqueous phosphoric acid solution containing a plurality of metal ions |
JP2008247733A (en) | 2007-03-14 | 2008-10-16 | Niro Process Technology Bv | Purification of phosphoric acid rich stream |
CH701939B1 (en) | 2007-09-06 | 2011-04-15 | Sulzer Chemtech Ag | Method and apparatus for the purification of aqueous phosphoric acid. |
DE102010031507A1 (en) * | 2010-06-02 | 2011-12-08 | Evonik Stockhausen Gmbh | Purifying a composition comprising (meth)acrylic acid, contaminant and water, comprises crystallizing (meth)acrylic acid and water, partially and completely melting the crystals of a crystal layer, and treating by layer crystallization |
BR112013018066B1 (en) * | 2011-02-18 | 2021-09-08 | Sulzer Management Ag | METHOD FOR PREPARING A POLYLACTIC ACID |
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EP0616998A1 (en) * | 1993-03-26 | 1994-09-28 | Sulzer Chemtech AG | Process and plant for the purification of acrylic acid |
US20110105791A1 (en) * | 2006-08-22 | 2011-05-05 | Franz-Felix Kuppinger | Process for preparing acrylic acid purified by crystallization from hydroxypropionic acid and apparatus therefore |
EP2471739A1 (en) * | 2011-01-04 | 2012-07-04 | Solvay Sa | Process for the purification of phosphoric acid |
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Also Published As
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KR20150105951A (en) | 2015-09-18 |
WO2014108285A1 (en) | 2014-07-17 |
JP2016510256A (en) | 2016-04-07 |
KR102228425B1 (en) | 2021-03-16 |
HUE056370T2 (en) | 2022-02-28 |
CN105026007A (en) | 2015-11-04 |
JP6134811B2 (en) | 2017-05-24 |
US9597609B2 (en) | 2017-03-21 |
CN105026007B (en) | 2018-09-21 |
TWI607800B (en) | 2017-12-11 |
PL2928574T3 (en) | 2022-02-14 |
CN108837549B (en) | 2021-09-03 |
CN108837549A (en) | 2018-11-20 |
EP2928574B1 (en) | 2021-09-29 |
ES2895952T3 (en) | 2022-02-23 |
TW201438814A (en) | 2014-10-16 |
US20150360143A1 (en) | 2015-12-17 |
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