EP2831909A1 - Device for irradiating a substrate - Google Patents
Device for irradiating a substrateInfo
- Publication number
- EP2831909A1 EP2831909A1 EP13702891.6A EP13702891A EP2831909A1 EP 2831909 A1 EP2831909 A1 EP 2831909A1 EP 13702891 A EP13702891 A EP 13702891A EP 2831909 A1 EP2831909 A1 EP 2831909A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiator
- length
- tube
- curvature
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 49
- 230000001678 irradiating effect Effects 0.000 title claims abstract description 12
- 238000005286 illumination Methods 0.000 claims abstract description 48
- 230000003287 optical effect Effects 0.000 claims abstract description 45
- 230000003247 decreasing effect Effects 0.000 claims abstract description 9
- 238000007620 mathematical function Methods 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 238000013461 design Methods 0.000 abstract description 4
- 238000007669 thermal treatment Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000005855 radiation Effects 0.000 description 9
- 238000000034 method Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000003973 paint Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
- 229910052724 xenon Inorganic materials 0.000 description 1
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/122—Incoherent waves
- B01J19/128—Infrared light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
Definitions
- the present invention relates to a use of the device according to the invention for the irradiation of a substrate.
- Such devices are used, for example, for drying paints and varnishes, for curing coatings, for heating food products or for processing semiconductor wafers.
- the infrared radiator Due to the planar juxtaposition of the infrared radiator, a plurality of infrared radiators are provided relative to the surface to be irradiated in the irradiation device.
- the irradiation device also has a very high radiant power per unit area. In order to achieve a homogeneous distribution of the heating power, the heating power of the infrared radiator must therefore be coordinated. This applies in particular to the edge regions of the irradiation surface. An irradiation device with a planar juxtaposition of infrared radiators is therefore a total of control technology consuming.
- the invention is therefore based on the object of specifying a device for irradiation of a substrate, which allows a homogeneous or rotationally symmetrical radiation of the substrate, and which also requires a small constructional and control engineering effort.
- the radiator tube in the center section has a continuously decreasing curvature, with the proviso that the illumination length of the radiator tube over an arc angle of less than 2 ⁇ extends.
- the irradiation device has a receptacle for a substrate to be irradiated and an optical emitter which are arranged to be movable relative to one another.
- the receptacle and / or the optical radiator are rotatable about an axis of rotation, so that the radiator irradiates a circular irradiation surface with a radius r.
- the radiator comprises a curved radiator tube which has a continuously decreasing curvature at least in the middle section, preferably the curvature of an arithmetic spiral.
- the pole of the planar polar coordinate system is defined by the center M of the circular irradiation surface.
- a polar axis is determined which has its origin in the pole and on which the radius r of the irradiation surface is plotted.
- Such a polar coordinate system is shown schematically in FIG.
- a coordinate P in the plane spanned by the polar coordinate system is described by polar coordinates P ( ⁇ , r), ie by the angle ⁇ and the radius r.
- the coordinate lines subdivide the plane of the polar coordinate system into partial surfaces (Ti, T 2 , T 3 ,...) Whose surface depends on their radial distance from the pole.
- the part surfaces thus formed have two linear and at least one curved side line. Common to all subareas is that, first, the two linear sides have the length Ar, and second, that the angle at which the two straight lines running through the two linear side lines intersect at the center is ⁇ in all subareas.
- an irradiation device with an elongate, radially extending infrared radiator which has a constant irradiation power along its radiator tube, a constant energy is released along the radiator tube per radiator length unit and time unit. As the sizes of the irradiated areas increase in the radial direction, a decreasing irradiation intensity strikes the substrate surface as the radial distance from the center increases.
- the invention provides that, depending on the distance to the pole, the energy introduced by the optical radiator into the respective partial surfaces is increased.
- the increase in the energy input takes place by an extension of the radiator length section which effectively acts on the partial surface. This is achieved by the decreasing outward curvature of the radiator tube.
- the curvature of the radiator tube which allows a maximum achievable effective length of radiating section, can be approximately described by means of a composed of a finite number of straight line segments polygon.
- a maximum effective radiating length section is obtained when the straight lines of the traverse connect, for example, the points (a ⁇ Acp, a 2 * Ar) and P 2 ((ai + 1) * ⁇ , (a 2 +1) * Ar) & and 2 belong to the set of natural numbers.
- the higher the number n of the subdivision the closer the polygonal arc approaches the arc length of an arithmetic spiral.
- the circular irradiation surface forms a middle point, which defines the pole of a planar polar coordinate system
- the intensity distribution on the surface to be irradiated is significantly influenced.
- An optical emitter with a radiator tube which has a first partial length and a second partial length with different respective radially outwardly decreasing curvatures of a spiral, enables a flexible adjustment of the radiation intensity in the radial direction.
- the curvature of the radiator tube is described by a curve passing through the centers of the cross-sectional surfaces of the radiator tube, wherein the curve at any position is not more than 1 mm, preferably more than 0.3 mm from which deviates from the curvature described by the mathematical function.
- the use of optical radiators with a curved radiator tube in irradiation apparatuses which are suitable for the homogeneous irradiation of substrates requires an exact and reproducible production of the curved radiator tubes.
- the curvature of the radiator tube can be described by a curve passing through the centers of the cross-sectional areas.
- the illumination length of the radiator tube extends over a bend angle of less than ⁇ radians.
- the curvatures of the emitters used are to be manufactured with high precision.
- a beam with a radiator tube that extends over an arc angle of less than ⁇ radians, is easy and inexpensive to produce in high precision.
- An irradiation device with only a single curved optical radiator is particularly cost-effective to manufacture and also easy to control.
- a single radiator also has only a small space requirement. It can also be installed in hard-to-reach, cramped areas of the irradiation device and can be used in particular in irradiation devices in which spatial restrictions make it difficult, for example, to install a surface radiator.
- Such space constraints may include, for example, gas supplies, brackets, axles, or motors that may be provided both in the central area and in the peripheral area of the device.
- the device according to the invention has at least one further optical radiator with a radiator tube curved in a plane of illumination parallel to the irradiation surface and comprising an illumination length having a center section and two end sections, the length of the central section being at least 50%, preferably at least 90% of the illumination length.
- An irradiation device with at least two curved optical radiators allows short cooling phases and at the same time a particularly homogeneous irradiation of the substrate at high irradiation intensities.
- the radiators can have the same or different design. In addition, they may differ, for example, in the length of the filaments, the filament material or the applied voltage.
- the power of the radiator and the curvature of the radiator tube are preferably adapted to the substrate to be irradiated.
- the device has at least two optical radiators, each of which irradiates at least one partial area of the substrate.
- the irradiation device comprises a first optical radiator for irradiating a first, inner irradiation surface and a second optical radiator for irradiating a second, outer irradiation surface of the substrate.
- the irradiation surface has a center point and if, starting from the center, a radially outwardly extending beam axis emerges which intersects the first and the at least one further radiator.
- optical radiators are arranged overall in the form of a spiral.
- a spiral arrangement of the optical emitters allows a uniform irradiation of the surface to be irradiated.
- several radiators can be controlled separately from each other, whereby a higher irradiation power is achieved overall.
- Such an arrangement is particularly suitable for large substrates and for achieving high irradiances.
- a plurality of independently controllable heating coils are arranged.
- each heating coil and thus the irradiation intensity of a radiator length section can be influenced, for example, via the operating voltage.
- This is particularly advantageous in the case of the irradiation of substrates which extend in three spatial directions, so that the irradiation intensity striking the irradiation surface can be adapted to the substrate shape. It has proved to be advantageous if the end sections also have the curvature of an arithmetic spiral.
- the end sections of the radiator In many irradiation devices is often just in the central area or in the edge region of the irradiation device, only a limited space for the arrangement of the radiator available, so that the end portions of the radiator must be adapted to the available space. However, if sufficient space is available, it has proven to be advantageous if the end sections also have the curvature of an arithmetic spiral. Such end portions are particularly suitable for uniform irradiation of the substrate. The curvature of the end portions is identical or deviates from the curvature of the center portion. It has proven useful if the length of the center section of the first optical radiator makes up at least 90% of the illumination length. An optical radiator with an itte nabterrorism this length extends over a large angular range and is therefore particularly suitable for homogeneous irradiation of a substrate.
- the inventive device with an optical radiator in the form of an infrared radiator is particularly suitable for the processing of semiconductor wafers. In the processing of a semiconductor wafer, it is often a particularly uniform heating of the semiconductor wafer.
- the device according to the invention can advantageously be used with an optical emitter in the form of a gas discharge emitter for the curing of coatings on optical storage media or semiconductor wafers, whereby a gas discharge emitter either preferably emits UV radiation and short wavelength visible radiation in order to accelerate chemical reactions of the curing or only excite, or emits visible or even near infrared radiation to perform such processes, which are preferably excited or controlled in this wavelength range.
- a gas discharge emitter either preferably emits UV radiation and short wavelength visible radiation in order to accelerate chemical reactions of the curing or only excite, or emits visible or even near infrared radiation to perform such processes, which are preferably excited or controlled in this wavelength range.
- argon, krypton or xenon can be used as the filling gas.
- FIG. 1 shows a first embodiment of the device according to the invention for the thermal treatment of a substrate with a curved infrared radiator
- FIG. 2 shows a plan view of the first embodiment of the device according to the invention for the thermal treatment of a substrate which has a curved infrared radiator
- FIG. 3 shows a plan view of a second embodiment of the irradiation device according to the invention with a curved infrared radiator which has a curvature deviating from the ideal spiral shape in the end sections,
- FIG. 4 shows a plan view of a third embodiment of the irradiation device according to the invention with three curved infrared radiators
- FIG. 5 shows a plan view of a fourth embodiment of the irradiation device according to the invention with four curved infrared radiators having a curvature deviating from the ideal spiral shape in the end sections
- FIG. 6 shows a curved infrared radiator with a radiator tube whose center section has the curvature of an arithmetic spiral;
- FIG. 7 shows a plan view of a fifth embodiment of the irradiation device according to the invention, in which the infrared radiator has a radiator tube with a first partial length with a curvature of a first arithmetic spiral and a second partial length with a curvature of a second arithmetic spiral, FIG.
- Figure 8 is a polar coordinate system for explaining the invention.
- Figure 1 shows schematically a cross section of an irradiation device according to the invention for the processing of semiconductor wafers, the total of the reference numeral 10 is assigned.
- the device 10 consists of a housing 11 which encloses a process space 12, an infrared radiator 13 and a receptacle 14 for a substrate 15.
- the receptacle 14 is rotatably arranged within the process chamber. It serves to receive the substrate 15 to be irradiated.
- the receptacle 14 and the infrared radiator 13 can be moved relative to one another so that the infrared radiator 13 irradiates a circular irradiation surface with a radius r.
- the infrared radiator 13 is arranged in a plane of illumination extending parallel to the irradiation surface.
- the radiator tube of the infrared radiator 13 is curved and has the curvature of an arithmetic spiral. If the curvature of the radiator tube is described by a curve running through the centers of the cross-sectional areas of the radiator tube, the curve at no position deviates more than 0.3 mm from the curvature described by the mathematical function.
- FIG. 2 schematically shows a plan view of the device according to the invention for irradiating a substrate 10.
- the device 10 comprises a circular irradiation surface 21 with a center point 22.
- An infrared radiator 13 is arranged in an illumination plane running parallel to the irradiation surface.
- the spotlight tube of the infrared radiator 13 is made of quartz glass and has the entire illumination length, the curvature of an arithmetic spiral. Starting from the center 22 of the irradiation surface 21, the course of the curvature by means of a polygonal line 23 and the actual course of the infrared radiator 13 are shown approximately.
- the radius of the irradiation surface is 150 mm.
- the infrared radiator is characterized by a nominal power of 2000 W at a nominal voltage of 230 V and an illumination length of 344 mm.
- the outer dimensions of the spotlight tube are 14 x 14 mm.
- the plan view shown schematically in FIG. 3 of an irradiation device 30 according to the invention for the curing of coatings on optical storage media or semiconductor wafers has an irradiation surface 31 in which, in an edge region 32a and in a central region 32b, due to spatial limitations by holders, axes and Motors no room for UV lamps is available. These areas are shown hatched in FIG.
- the curvature of the UV radiator 33 is shown in simplified form as a polygon.
- the shape of the UV radiator 33 in the end sections 34, 35 of the illumination length of the radiator tube deviates from the shape of an arithmetic spiral. In the center portion of the illumination length, the shape of an arithmetic spiral is maintained.
- the illumination length of the spotlight tube is 330 mm long.
- the central portion of the illumination length has a length of 253 mm, the end portion 35 has a length of 53 mm and the central end portion 34 has a length of 23.6 mm.
- the radius of the irradiation surface is 135 mm.
- the infrared radiator 33 is characterized by a nominal power of 2,000 W at a rated voltage of 230 V.
- the external dimensions of the spotlight tube are 10 x 10 mm.
- FIG. 4 schematically shows a plan view of the device according to the invention for the thermal treatment of a substrate 40, which has three curved infrared radiators 41, 42, 43.
- the infrared radiators 41, 42, 43 are arranged in the form of a spiral.
- the infrared radiators 41, 42, 43 each irradiate a circular or annular irradiation surface.
- a beam axis 44 running outward from the center of the irradiation surface is drawn, which intersects both the radiator 43 and the radiator 41.
- the inner radiator 43 irradiates an inner irradiation surface and the outer radiator 43 irradiates an outer irradiation surface, wherein the inner and the outer irradiation surface overlap in the radial direction.
- the radius of the irradiation surface is 150 mm.
- the infrared radiators 41 and 42 are characterized by a nominal power of 1,910 W at rated voltage of 230 V and an illumination length of 382 mm.
- the external dimensions of the spotlight tube are 10 x 10 mm.
- the infrared radiator 43 has an illumination length of 476 mm. It has a nominal power of 2380 W at nominal voltage of 230 V.
- FIG. 5 shows an irradiation device 50 according to the invention with four infrared radiators 53, 54, 55, 56.
- the device 50 comprises a circular irradiation surface 51, in which no space for infrared radiators is available in an edge region 52a and in a central region 52b due to space limitations by holders, axes and motors. These areas are shown hatched in FIG.
- the shape of the infrared radiator 53, 54, 55, 56 deviates from the shape of an arithmetic spiral in each case in one end section 57, 58, 59, 60 of the illumination length of its radiator tube. In the center portion and the corresponding end portion of the illumination length of each radiator, the shape of an arithmetic coil is maintained.
- the radius of the irradiation surface is 135 mm.
- the infrared radiators 53 and 56 are characterized by a nominal power of 1875 W at nominal voltage of 230 V and an illumination length of 375 mm (???).
- the external dimensions of the spotlight tube are 10 x 10 mm.
- the infrared radiators 54, 55 have an illumination length of 246 mm and a nominal power of 1230 W at nominal voltage of 230V.
- Figure 6 shows schematically a spatial representation and a side view of an infrared radiator according to the invention, to which the reference numeral 1 is assigned overall.
- the power supply consists of an outer and an inner power supply wire and a molybdenum foil.
- the inner power supply wire protrudes into the radiator tube and is used for electrical contacting of the heating element.
- the radiator tube 2 has an illumination length 7, which consists of a center section 8 and two end sections 9a, 9b.
- the length of the center section 8 relative to the entire illumination length 7 is 90%.
- the radiator tube has the curvature of an arithmetic spiral.
- the illumination length 7 of the emitter tube 2 comprises an arc length of 1.1 ⁇ rad.
- a reflector 5 is applied in the form of a gold coating, so that the radiation generated by the filament from the region 6 of the emitter tube 2 exits.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Electromagnetism (AREA)
- General Health & Medical Sciences (AREA)
- Plasma & Fusion (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Resistance Heating (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
- Heating, Cooling, Or Curing Plastics Or The Like In General (AREA)
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102012005916A DE102012005916B3 (en) | 2012-03-26 | 2012-03-26 | Device for irradiating a substrate |
PCT/EP2013/000149 WO2013143633A1 (en) | 2012-03-26 | 2013-01-18 | Device for irradiating a substrate |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2831909A1 true EP2831909A1 (en) | 2015-02-04 |
Family
ID=47678670
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13702891.6A Withdrawn EP2831909A1 (en) | 2012-03-26 | 2013-01-18 | Device for irradiating a substrate |
Country Status (7)
Country | Link |
---|---|
US (1) | US9248425B2 (en) |
EP (1) | EP2831909A1 (en) |
JP (1) | JP6000441B2 (en) |
KR (1) | KR101620775B1 (en) |
CN (1) | CN104350589B (en) |
DE (1) | DE102012005916B3 (en) |
WO (1) | WO2013143633A1 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102475973B1 (en) * | 2015-03-31 | 2022-12-08 | 도쿄엘렉트론가부시키가이샤 | Homogenization of exposure dose through rotation, translation, and variable processing conditions |
US10443934B2 (en) * | 2015-05-08 | 2019-10-15 | Varian Semiconductor Equipment Associates, Inc. | Substrate handling and heating system |
US9916989B2 (en) * | 2016-04-15 | 2018-03-13 | Amkor Technology, Inc. | System and method for laser assisted bonding of semiconductor die |
US11370213B2 (en) | 2020-10-23 | 2022-06-28 | Darcy Wallace | Apparatus and method for removing paint from a surface |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3617918A1 (en) * | 1986-05-28 | 1987-12-03 | Heimann Gmbh | Discharge lamp |
US4859832A (en) * | 1986-09-08 | 1989-08-22 | Nikon Corporation | Light radiation apparatus |
JPS6355428U (en) * | 1986-09-26 | 1988-04-13 | ||
JP3464005B2 (en) * | 1991-08-16 | 2003-11-05 | 東京エレクトロン株式会社 | Heat treatment method |
US6108490A (en) * | 1996-07-11 | 2000-08-22 | Cvc, Inc. | Multizone illuminator for rapid thermal processing with improved spatial resolution |
JPH1140503A (en) * | 1997-07-17 | 1999-02-12 | Hitachi Ltd | Semiconductor manufacture and device |
US5930456A (en) * | 1998-05-14 | 1999-07-27 | Ag Associates | Heating device for semiconductor wafers |
TW505992B (en) * | 1998-08-06 | 2002-10-11 | Ushio Electric Corp | Cooling structure of a heating device of the light irradiation type |
JP3381909B2 (en) | 1999-08-10 | 2003-03-04 | イビデン株式会社 | Ceramic heater for semiconductor manufacturing and inspection equipment |
GB2356543A (en) * | 1999-11-19 | 2001-05-23 | Gen Electric | Circular filament heating lamp |
JP3528734B2 (en) * | 2000-01-06 | 2004-05-24 | ウシオ電機株式会社 | Lamp unit of light irradiation type heat treatment equipment |
DE10051125A1 (en) * | 2000-10-16 | 2002-05-02 | Steag Rtp Systems Gmbh | Device for the thermal treatment of substrates |
JP2002161731A (en) * | 2000-11-29 | 2002-06-07 | Hitachi Hometec Ltd | Heat-producing body unit |
US20050217799A1 (en) * | 2004-03-31 | 2005-10-06 | Tokyo Electron Limited | Wafer heater assembly |
JP2006078019A (en) * | 2004-09-07 | 2006-03-23 | Kokusai Electric Semiconductor Service Inc | Heat treatment equipment |
US8137465B1 (en) | 2005-04-26 | 2012-03-20 | Novellus Systems, Inc. | Single-chamber sequential curing of semiconductor wafers |
JP4935417B2 (en) | 2007-02-26 | 2012-05-23 | ウシオ電機株式会社 | Light irradiation type heat treatment equipment |
US20090101633A1 (en) * | 2007-10-19 | 2009-04-23 | Asm America, Inc. | Reactor with small linear lamps for localized heat control and improved temperature uniformity |
JP5522988B2 (en) | 2009-07-08 | 2014-06-18 | キヤノン株式会社 | Zoom lens and imaging apparatus using the same |
-
2012
- 2012-03-26 DE DE102012005916A patent/DE102012005916B3/en not_active Expired - Fee Related
-
2013
- 2013-01-18 KR KR1020147026574A patent/KR101620775B1/en active IP Right Grant
- 2013-01-18 US US14/388,021 patent/US9248425B2/en not_active Expired - Fee Related
- 2013-01-18 CN CN201380016519.2A patent/CN104350589B/en not_active Expired - Fee Related
- 2013-01-18 EP EP13702891.6A patent/EP2831909A1/en not_active Withdrawn
- 2013-01-18 JP JP2015502117A patent/JP6000441B2/en not_active Expired - Fee Related
- 2013-01-18 WO PCT/EP2013/000149 patent/WO2013143633A1/en active Application Filing
Non-Patent Citations (2)
Title |
---|
None * |
See also references of WO2013143633A1 * |
Also Published As
Publication number | Publication date |
---|---|
WO2013143633A1 (en) | 2013-10-03 |
US20150048261A1 (en) | 2015-02-19 |
JP2015520010A (en) | 2015-07-16 |
DE102012005916B3 (en) | 2013-06-27 |
CN104350589A (en) | 2015-02-11 |
US9248425B2 (en) | 2016-02-02 |
KR101620775B1 (en) | 2016-05-12 |
CN104350589B (en) | 2017-09-15 |
JP6000441B2 (en) | 2016-09-28 |
KR20140126403A (en) | 2014-10-30 |
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