EP2696570A2 - Lens array for partitioned image sensor having color filters - Google Patents
Lens array for partitioned image sensor having color filters Download PDFInfo
- Publication number
- EP2696570A2 EP2696570A2 EP13179183.2A EP13179183A EP2696570A2 EP 2696570 A2 EP2696570 A2 EP 2696570A2 EP 13179183 A EP13179183 A EP 13179183A EP 2696570 A2 EP2696570 A2 EP 2696570A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- lens
- image sensor
- focal length
- color filter
- radius
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011521 glass Substances 0.000 claims abstract description 44
- 238000003384 imaging method Methods 0.000 claims description 19
- 238000000576 coating method Methods 0.000 claims description 17
- 235000012431 wafers Nutrition 0.000 description 34
- 238000000411 transmission spectrum Methods 0.000 description 12
- 239000011248 coating agent Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000006059 cover glass Substances 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 241000593989 Scardinius erythrophthalmus Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002329 infrared spectrum Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N23/00—Cameras or camera modules comprising electronic image sensors; Control thereof
- H04N23/50—Constructional details
- H04N23/55—Optical parts specially adapted for electronic image sensors; Mounting thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14632—Wafer-level processed structures
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Definitions
- the present invention relates generally to image sensors, and more specifically, to a lens array for a partitioned image sensor having color filters.
- An image capture unit typically includes an image sensor and an imaging lens.
- the imaging lens focuses light onto the image sensor to form an image, and the image sensor converts the light into electric signals.
- the electric signals are output from the image capture unit to other units in a host electronic system or a subsystem.
- the electronic system may be a mobile phone, a computer, a digital camera or a medical device.
- image capture units are increasingly required to have lower profiles so that overall sizes of electronic systems including the image capture units can be reduced while at the same time not sacrifice quality in the optical images that are captured.
- the profile of an image capture unit may be associated with the distance from the bottom of image sensor to the top of the imaging lens.
- FIG. 1A is a schematic diagram of an image capture unit including an imaging lens and an image sensor.
- FIG. 1B is a schematic diagram of a low profile image capture unit including a low profile imaging lens and an image sensor.
- FIG. 2 illustrates one example of an image sensor having four partitioned areas in accordance with the teachings of the present invention.
- FIG. 3A is a cross-section illustrating two lenses having different focal lengths and two partitioned areas of one example of a low profile image capture unit in accordance with the teachings of the present invention.
- FIG. 3B is a cross-section illustrating two lenses having different radii of curvature and two partitioned areas of one example of a low profile image capture unit in accordance with the teachings of the present invention.
- FIG. 4 illustrates example transmission spectra of photo-resist materials for red, green, and blue filters.
- FIG. 5 illustrates one example of a 2x2 lens array for a partitioned image sensor in accordance with the teachings of the present invention.
- FIG. 6 illustrates one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention.
- FIG. 7A illustrates a cross section of one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention.
- FIG. 7B illustrates another cross section of one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention.
- FIG. 8A illustrates an example combined transmission spectrum of an IR-cut filter and red color filter in accordance with the teachings of the present invention.
- FIG. 8B illustrates an example transmission spectrum of a green color filter in accordance with the teachings of the present invention.
- FIG. 8C illustrates an example transmission spectrum of blue color filter in accordance with the teachings of the present invention.
- FIG. 8D illustrates an example daylight spectrum transmitted through a UV-IR-cut filter in accordance with the teachings of the present invention.
- FIG. 8E illustrates an example transmission spectra of UV-IR-cut filter for 0°, 25°, 30°, and 35° incident light in accordance with the teachings of the present invention.
- FIG. 9 illustrates example transmission spectra of multilayer dielectric coatings red, green, and blue bandpass filters in accordance with the teachings of the present invention.
- FIG. 10 illustrates the cross section of a lens cube of a lens array on a partitioned image sensor in accordance with the teachings of the present invention.
- FIG. 11 is a block diagram illustrating one example of an image sensor in accordance with the teachings of the present invention.
- a low profile image capture unit may include an array of lenses having individual filters disposed on a partitioned image sensor.
- the quality of optical images captured which may for example be express in terms of resolution (i.e ., the number of pixels) and/or sharpness, is not sacrificed for the low profile in accordance with the teachings of the present invention.
- FIG. 1A is a schematic diagram of an image capture unit 200 including an imaging lens 202 and an image sensor 204.
- the distance between lens 202 and image sensor 204 is approximately f, where f is the focal length of lens 202.
- the width of the image sensor 204 covered by lens 202 is W, and the lens diameter is D.
- FIG. 1B shows a schematic diagram of a low profile image capture unit 210 including an imaging lens 212 and an image sensor 214.
- the distance between lens 212 and image sensor 214 is approximately f/2, where f/2 is the focal length of lens 212.
- the width of the image sensor 214 covered by lens 212 is W/2, and the lens diameter is D/2.
- Image sensors 204 and 214 are the same image sensor, and both image sensors have the same pixel array structure. Since the width of image sensor 214 is half of the width of image sensor 204, image sensor 214 will have half of number of pixels as compared with image sensor 204 in one dimension. In two dimensions, image sensor 214 will have quarter of number of pixels as compared with image sensor 204. In other words, the number of pixels of the image captured is approximately proportional to the square of the scale of the distance between the lens and the image sensor.
- FIG. 2 illustrates an image sensor 220 having four partitioned areas 222, 224, 226, and 228 closely arranged proximate to each other in accordance with the teachings of the present invention.
- Each partitioned area 222, 224, 226, and 228 is covered by a respective imaging lens (e.g ., lens 212 of FIG. 1B ).
- the focal length of the imaging lens e.g ., lens 212 of FIG. 1B
- a low profile image capture unit can be constructed using four lenses and four partitioned areas of an image sensor.
- the low profile image capture unit will have approximately the same resolution (i.e ., the same number of pixels) as compared with the original image capture unit, because four areas of image sensor are used.
- An area of image sensor may be similar to image sensor 214 of FIG. 1 B.
- FIG. 3A shows a cross-section of low profile image capture unit 300 including four imaging lenses and four partitioned areas of image sensor in accordance with the teachings of the present invention.
- the cross-section illustrated in FIG. 3A may correspond with dashed line A-A' of FIG. 2 .
- the four partitioned areas of image sensor may be areas 222, 224, 226, and 228 of image sensor 220 of FIG. 2 .
- FIG. 3A Only two partitioned areas 222 and 224 of image sensor 220 are shown in FIG. 3A .
- an image capture system having low profile can be constructed, while the resolution ( i.e ., the number of pixels) of images captured can be maintained.
- imaging lens 302 is positioned a first focal length f1 away from respective image sensor 222.
- Imaging lens 304 is positioned a second focal length f2 away from respective image sensor 224.
- the second focal length f2 is approximately half of the focal length when compared with lens 202 shown in FIG. 1A .
- example image capture unit 300 of FIG. 3A is a low profile image capture unit such that the width of the image sensors 222 and 224 covered by lens 302 and 304 are W/2, and the lens diameters of lenses 302 and 304 are D/2 in accordance with the teachings of the present invention.
- a typical image capture unit may include a Bayer type color filter array on the image sensor.
- Bayer type color filter array is typically made from photo-resist materials.
- the transmission spectra of photo-resist materials for red (R), green (G), and blue (B) filters are depicted in FIG. 4 .
- the transmission of red filter includes an IR spectrum, e.g., wavelength beyond 650 nm.
- an IR-cut filter is generally required to cut the transmission of wavelength beyond 650 nm.
- crosstalk domains in FIG. 4 that may degrade the quality of the color image.
- partitioned areas of image sensor 222 and 224 of FIG. 3A may not include Bayer type color filter array.
- partitioned areas 222, 224, 226, and 228 may be designated to red (R), green (G), clear (C), and blue (B) areas, respectively.
- Red area may be covered by a single red filter
- green area may be covered by a single green filter
- blue area may be covered by a single blue filter
- clear or C area may not be covered by any filter or may be covered by a single green filter.
- Bayer type color filter array on the image sensor is based on a semiconductor lithographic process requiring very accurate overlay as sensor pitch decreases.
- the Bayer type color filter coating is a very expensive process.
- rework process will increase risk of damaging the image sensor.
- the single color filter coating on a glass substrate e.g., a glass wafer of a wafer-level lens cube, is an inexpensive process without necessity of accurate mask and alignment. Rework on glass substrate is very easy.
- the first focal length f1 may be different than the second focal length f2.
- the first focal length f1 corresponds with light having a first color, such as for example but not limited to red (R)
- second focal length f2 corresponds with light having a second color, such as for example but not limited to green (G).
- R red
- G green
- a single image having the first color is focused by lens 302 onto image sensor 222 and the same single image having the second color is focused by lens 304 onto image sensor 224 in accordance with the teachings of the present invention.
- the red (R) area includes red pixels only
- the green (G) area includes green pixels only
- the blue (B) area includes blue pixels only.
- the clear or C area may include white pixels when no filter is applied, and green pixels when a green filter is applied.
- a readout system and/or processor may rearrange red, green, and blue pixels into Bayer pattern or any pattern for further processing the color signals and forming the color images.
- C pixels may be use as white pixels for particular processing or simply contribute as green pixels in accordance with the teachings of the present invention.
- FIG. 5 illustrates a lens array 400 for the partitioned image sensor in accordance with the teachings of the present invention.
- the partitioned image sensor may be image sensor 220 of FIG. 2 .
- Lens array 400 may be a 2x2 array having low profile lenses 402, 404, 406, and 408, which are designated to red (R), green (G), clear (C), and blue (B) areas, respectively.
- each one of the lenses 402, 404, 406, and 408 is arranged to focus a single image onto a respective one of the red (R), green (G), clear (C), and blue (B) areas image sensor regions.
- lens 402 forms a red image only
- lens 404 forms a green image only
- lens 408 forms a blue image only.
- each one of the lenses 402, 404, 406, and 408 has a different respective focal length that corresponds with the specific color of light that is being focused onto the corresponding image sensor region (e.g., see FIG. 3A ).
- each one of the lenses 402, 404, 406, and 408 has a different respective radius of curvature (ROC) that corresponds with the specific color of light that is being focused onto the corresponding image sensor region (e.g., see FIG. 3B ).
- lenses 402, 404, 406, and 408 may have the same focal length and the same ROC.
- each lens 402, 404, 406, and 408 forms individually a single color image
- the optical quality, e.g ., sharpness, of each individual image may be improved by adjusting individually the focal length distance between each lens and the corresponding image sensor.
- the focal length distance between each one of the lenses 402, 404, 406, and 408 and the corresponding partitioned image sensor may be adjusted individually according to the wavelength of light, in order to get a high quality image, in accordance with the teachings of the present invention (e.g., see FIG. 3A ).
- the focal length of C lens 406 may be the same with one of lenses 402, 404, and 408.
- FIG. 3B shows a cross-section of low profile image capture unit 320 including four imaging lenses and four partitioned areas of image sensor in accordance with the teachings of the present invention.
- the cross-section illustrated in FIG. 3B may correspond with dashed line A-A' of FIG. 2 .
- the ROC of lenses 402 and 404 are different such that the focal lengths of lenses 402 and 404 become the same.
- each lens 402, 404, 406, and 408 at individual color may be the same, and thus no individual adjustment of the focal length distance between each lens and the corresponding image sensor is necessary, in accordance with the teachings of the present invention. While the radii of curvature of R, G, and B lenses are different, the ROC of C lens 406 may be the same with one of lenses 402, 404, and 408.
- lenses 402, 404, 406, and 408 may have the same ROC, and the focal length difference of lenses 402, 404, 406, and 408 may be small and negligible, in accordance with the teachings of the present invention ( e.g., see FIGS. 7A and 7B ).
- FIG. 6 illustrates a 2x2 lens array 500 disposed proximate to a partitioned image sensor 501 in accordance with the teachings of the present invention.
- lens array 500 may include individual wafer-level lens cubes 502, 504, 506, and 508, which are identical lenses, to focus a single image onto a respective one of the respective partitions of image sensor 501 in accordance with the teachings of the present invention.
- lenses 502, 504, 506, and 508 are designated to R, G, B, and C areas, respectively.
- the focal length positions of R lens 502, G lens 504, B lens 506, and C lens 508 may be properly adjusted.
- FIG. 7A illustrates an example including the cross-section 550 of 2x2 lens array 500 in accordance with the teachings of the present invention. Only lens cubes 502 and 504 are shown in FIG. 7A .
- the cross-section illustrated in FIG. 7A may correspond with dashed line B-B' of FIG. 6 .
- lens cubes 502 and 504 are disposed on a cover glass 510. Partitioned areas 512 and 514 of a single image sensor are under cover glass 510, aligned with lens cubes 502 and 504, respectively.
- each wafer-level lens cube includes at least a glass wafer and a lens on the glass wafer.
- each wafer-level lens cube may include a lens 520 on a glass wafer 522, a lens 524 on the other side of glass wafer 522, a lens 528 on a glass wafer 530, a lens 532 on the other side of glass wafer 530, glass wafers 522 and 530, a spacer 526 between glass wafers 522 and 530, and a spacer 518 between glass wafer 530 and cover glass 510.
- an IR-cut filter 702 is disposed on a glass wafer 562 underneath a lens 560.
- IR-cut filter 702 may be multilayer dielectric coatings.
- the multilayer dielectric coatings may include alternate layers of high and low refractive indexes.
- a red color filter 704 is disposed in contact with the other side of glass wafer 562 between glass wafer 562 and a lens 564. Red color filter 704 may be a photo-resist coating.
- the combined transmission spectrum of IR-cut filter 702 and red color filter 704 is depicted in FIG. 8A .
- the transmission of wavelengths beyond 650 nm will be cut by IR-cut filter 702.
- a green color filter 706 is disposed in contact with glass wafer 522 between glass wafer 522 and lens 524. Green color filter 706 may be a photo-resist coating.
- the transmission spectrum of green color filter 706 is depicted in FIG. 8 B.
- IR-cut filter 702 and red filter 704 may be formed on either side of glass wafer 562. Furthermore, IR-cut filter 702 and red filter 704 may be formed on either side of a second glass wafer 566. Similarly, green filter 706 may be formed on either side of glass wafer 522, or either side of second glass wafer 530, in accordance with the teachings of the present invention.
- FIG. 7B illustrates the cross-section 600 of 2x2 lens array 500 in accordance with the teachings of the present invention. Only lens cubes 506 and 508 are shown in FIG. 7 B. The cross-section illustrated in FIG. 7B may correspond with dashed line C-C' of FIG. 6 . As shown in the depicted example, lens cubes 506 and 508 are disposed on a cover glass 510. Partitioned areas 612 and 614 of a single image sensor are under cover glass 510, aligned with lens cubes 506 and 508, respectively.
- a blue color filter 708 is disposed in contact with a glass wafer 662 between glass wafer 662 and a lens 664.
- Blue color filter 708 may be a photo-resist coating.
- the transmission spectrum of blue color filter 708 is depicted in FIG. 8C .
- a UV-IR-cut filter 710 is disposed on a glass wafer 622 underneath a lens 620.
- UV-IR-cut filter 710 may be multilayer dielectric coatings.
- the multilayer dielectric coatings may include 30 alternate layers of high and low refractive indexes.
- the daylight spectrum transmitted through UV-IR-cut filter 710 is depicted in FIG. 8D .
- UV-IR-cut filter 710 The transmission spectra of UV-IR-cut filter 710 for 0°, 25°, 30°, and 35° incident light are depicted in FIG. 8E .
- UV-IR-cut filter cuts the transmissions of wavelengths longer than 650 nm and shorter than 420 nm.
- Blue filter 708 may be formed on either side of glass wafer 662, or either side of a second glass wafer 666.
- UV-IR-cut filter 710 may be formed on either side of glass wafer 622, or either side of a second glass wafer 630, in accordance with the teachings of the present invention.
- R lens cube 502 requires an IR-cut filter.
- G lens cube 504 and B lens cube 506 require no IR-cut filter.
- C lens cube 508 uses a combined UV-IR-cut filter and no individual IR-cut filter is required.
- photo-resist coating red filter 704, green filter 706, and blue filter 708 are replaced with multilayer dielectric coated red filter 724, green filter 726, and blue filter 728, respectively, as depicted in FIGS. 7A and 7B , in accordance with the teachings of the present invention.
- the multilayer dielectric coated filters are bandpass filters.
- the transmission spectra of multilayer dielectric coated red filter 724, green filter 726, and blue filter 728 are shown in FIG. 9 .
- a multilayer dielectric coated color filter may include alternate layers of high and low refractive indexes. Since red filter 724 is a bandpass filter, an IR-cut filter, e.g ., IR-cut filter 702, is no longer necessary. Thus, there would be an additional cost savings of an IR-cut filter coating.
- the bandpass filters will also alleviate the crosstalk of photo-resist filters as shown in FIG. 4 .
- the IR-cut filter, the UV-IR-cut filter, and the red, green, and blue filters may appropriately be coated as a filter 902 over a lens 960 on a glass wafer 962 and over the surface of glass wafer 962 surrounding lens 960, or a filter 904 over a lens 964 on the other side of glass wafer 962 and over the surface on glass wafer 962 surrounding lens 964 as depicted in FIG. 10 , in accordance with the teachings of the present invention.
- FIG. 10 shows a lens cube 900, which may be one of lens cubes depicted in FIGS. 7A and 7B .
- FIG. 11 is a block diagram illustrating an image sensor 800, in accordance with the teachings of the present invention.
- Image sensor 800 is one example implementation of image sensor 220 of FIG.2 , or image sensor 501 of FIG. 6 .
- the illustrated example of image sensor 800 includes a pixel array 805, readout circuitry 810, function logic 815, and control circuitry 820.
- Pixel array 805 may be partitioned into four partitioned areas such as shown in FIG. 2 (not shown in FIG. 11 ).
- Pixel array 805 is a two-dimensional (2D) array of an image sensor or pixels (e.g ., pixels P1, P2 ... , Pn). Each pixel may be a CMOS pixel or a CCD pixel. As illustrated, each pixel is arranged into a row ( e.g ., rows Rl to Ry) and a column ( e.g., column Cl to Cx) to acquire image data of a person, place, object, etc., which can then be used to render a 2D image of the person, place, object, etc. In one example, pixel array 805 is a backside illuminated (BSI) image sensor. In one example, pixel array 805 is a frontside illuminated (FSI) image example, pixel array 805 is partitioned into a plurality of partitioned areas. Each partitioned area is covered by a color filter.
- BSI backside illuminated
- pixel array 805 is partitioned into a plurality of partitioned areas. Each partitione
- Readout circuitry 810 may include amplification circuitry, analog-to-digital (ADC) conversion circuitry, or otherwise.
- Function logic 815 may simply store the image data or even manipulate the image data by applying post image effects (e.g ., crop, rotate, remove red eye, adjust brightness, adjust contrast, or otherwise).
- readout circuitry 810 may readout a row of image data at a time along readout column lines (illustrated) or may readout the image data using a variety of other techniques (not illustrated), such as a serial readout or a full parallel readout of all pixels simultaneously.
- Control circuitry 820 is coupled to pixel array 805 to control operational characteristic of pixel array 805.
- control circuitry 820 may generate a shutter signal for controlling image acquisition.
- the shutter signal is a global shutter signal for simultaneously enabling all pixels within pixel array 805 to simultaneously capture their respective image data during a single acquisition window.
- the shutter signal is a rolling shutter signal whereby each row, column, or group of pixels is sequentially enabled during consecutive acquisition windows.
- the low profile image capture unit is not limited to 2x2 lens array, any size of lens array is possible. Accordingly, the image sensor is not limited to four partitioned areas, any number of partitioned areas is possible.
- the partitioned area of image sensor may be square or rectangular.
- the cross section of lens cube may be circular, ellipse, square, or rectangular.
- the image sensor may be a CMOS image sensor or a CCD.
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Signal Processing (AREA)
- Multimedia (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Color Television Image Signal Generators (AREA)
- Facsimile Heads (AREA)
Abstract
Description
- This application is related to co-pending patent application Number
13/486,787, filed June 1, 2012 - The present invention relates generally to image sensors, and more specifically, to a lens array for a partitioned image sensor having color filters.
- An image capture unit typically includes an image sensor and an imaging lens. The imaging lens focuses light onto the image sensor to form an image, and the image sensor converts the light into electric signals. The electric signals are output from the image capture unit to other units in a host electronic system or a subsystem. The electronic system may be a mobile phone, a computer, a digital camera or a medical device.
- As the use of image capture units in electronic systems increases, so do the demands for image capture unit features, capabilities and device dimensions. For example, image capture units are increasingly required to have lower profiles so that overall sizes of electronic systems including the image capture units can be reduced while at the same time not sacrifice quality in the optical images that are captured. The profile of an image capture unit may be associated with the distance from the bottom of image sensor to the top of the imaging lens.
- Non-limiting and non-exhaustive embodiments of the present invention are described with reference to the following figures, wherein like reference numerals refer to like parts throughout the various views unless otherwise specified.
-
FIG. 1A is a schematic diagram of an image capture unit including an imaging lens and an image sensor. -
FIG. 1B is a schematic diagram of a low profile image capture unit including a low profile imaging lens and an image sensor. -
FIG. 2 illustrates one example of an image sensor having four partitioned areas in accordance with the teachings of the present invention. -
FIG. 3A is a cross-section illustrating two lenses having different focal lengths and two partitioned areas of one example of a low profile image capture unit in accordance with the teachings of the present invention. -
FIG. 3B is a cross-section illustrating two lenses having different radii of curvature and two partitioned areas of one example of a low profile image capture unit in accordance with the teachings of the present invention. -
FIG. 4 illustrates example transmission spectra of photo-resist materials for red, green, and blue filters. -
FIG. 5 illustrates one example of a 2x2 lens array for a partitioned image sensor in accordance with the teachings of the present invention. -
FIG. 6 illustrates one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention. -
FIG. 7A illustrates a cross section of one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention. -
FIG. 7B illustrates another cross section of one example of a 2x2 lens array on a partitioned image sensor in accordance with the teachings of the present invention. -
FIG. 8A illustrates an example combined transmission spectrum of an IR-cut filter and red color filter in accordance with the teachings of the present invention. -
FIG. 8B illustrates an example transmission spectrum of a green color filter in accordance with the teachings of the present invention. -
FIG. 8C illustrates an example transmission spectrum of blue color filter in accordance with the teachings of the present invention. -
FIG. 8D illustrates an example daylight spectrum transmitted through a UV-IR-cut filter in accordance with the teachings of the present invention. -
FIG. 8E illustrates an example transmission spectra of UV-IR-cut filter for 0°, 25°, 30°, and 35° incident light in accordance with the teachings of the present invention. -
FIG. 9 illustrates example transmission spectra of multilayer dielectric coatings red, green, and blue bandpass filters in accordance with the teachings of the present invention. -
FIG. 10 illustrates the cross section of a lens cube of a lens array on a partitioned image sensor in accordance with the teachings of the present invention. -
FIG. 11 is a block diagram illustrating one example of an image sensor in accordance with the teachings of the present invention. - In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. It will be apparent, however, to one having ordinary skill in the art that the specific detail need not be employed to practice the present invention. In other instances, well-known materials or methods have not been described in detail in order to avoid obscuring the present invention.
- Reference throughout this specification to "one embodiment", "an embodiment", "one example" or "an example" means that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present invention. Thus, appearances of the phrases "in one embodiment", "in an embodiment", "one example" or "an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures or characteristics may be combined in any suitable combinations and/or subcombinations in one or more embodiments or examples. Particular features, structures or characteristics may be included in an integrated circuit, an electronic circuit, a combinational logic circuit, or other suitable components that provide the described functionality. In addition, it is appreciated that the figures provided herewith are for explanation purposes to persons ordinarily skilled in the art and that the drawings are not necessarily drawn to scale.
- Example methods and apparatuses directed to a low profile image capture unit are disclosed. As will be appreciated, a low profile image capture unit according to the teachings of the present invention may include an array of lenses having individual filters disposed on a partitioned image sensor. Furthermore, the quality of optical images captured, which may for example be express in terms of resolution (i.e., the number of pixels) and/or sharpness, is not sacrificed for the low profile in accordance with the teachings of the present invention.
- To illustrate,
FIG. 1A is a schematic diagram of animage capture unit 200 including animaging lens 202 and animage sensor 204. The distance betweenlens 202 andimage sensor 204 is approximately f, where f is the focal length oflens 202. The width of theimage sensor 204 covered bylens 202 is W, and the lens diameter is D. For comparison,FIG. 1B shows a schematic diagram of a low profileimage capture unit 210 including animaging lens 212 and animage sensor 214. The distance betweenlens 212 andimage sensor 214 is approximately f/2, where f/2 is the focal length oflens 212. The width of theimage sensor 214 covered bylens 212 is W/2, and the lens diameter is D/2. - In a low profile image capture unit, the imaging lens is replaced with a low profile imaging lens, while the image sensor is unchanged.
Image sensors image sensor 214 is half of the width ofimage sensor 204,image sensor 214 will have half of number of pixels as compared withimage sensor 204 in one dimension. In two dimensions,image sensor 214 will have quarter of number of pixels as compared withimage sensor 204. In other words, the number of pixels of the image captured is approximately proportional to the square of the scale of the distance between the lens and the image sensor. -
FIG. 2 illustrates animage sensor 220 having four partitionedareas area lens 212 ofFIG. 1B ). In this manner, the focal length of the imaging lens (e.g.,lens 212 ofFIG. 1B ) can be half of the imaging lens when the image sensor is not partitioned into four areas (e.g.,lens 202 ofFIG. 1A ). Thus, a low profile image capture unit can be constructed using four lenses and four partitioned areas of an image sensor. The low profile image capture unit will have approximately the same resolution (i.e., the same number of pixels) as compared with the original image capture unit, because four areas of image sensor are used. An area of image sensor may be similar toimage sensor 214 ofFIG. 1 B. - For illustration,
FIG. 3A shows a cross-section of low profileimage capture unit 300 including four imaging lenses and four partitioned areas of image sensor in accordance with the teachings of the present invention. In one example, the cross-section illustrated inFIG. 3A may correspond with dashed line A-A' ofFIG. 2 . The four partitioned areas of image sensor may beareas image sensor 220 ofFIG. 2 . Only twoimaging lenses FIG. 3A . Similarly only two partitionedareas image sensor 220 are shown inFIG. 3A . In this manner, an image capture system having low profile can be constructed, while the resolution (i.e., the number of pixels) of images captured can be maintained. - As shown in the illustrated example,
imaging lens 302 is positioned a first focal length f1 away fromrespective image sensor 222.Imaging lens 304 is positioned a second focal length f2 away fromrespective image sensor 224. As shown in the depicted example, the second focal length f2 is approximately half of the focal length when compared withlens 202 shown inFIG. 1A . Thus, exampleimage capture unit 300 ofFIG. 3A is a low profile image capture unit such that the width of theimage sensors lens lenses - A typical image capture unit may include a Bayer type color filter array on the image sensor. Bayer type color filter array is typically made from photo-resist materials. The transmission spectra of photo-resist materials for red (R), green (G), and blue (B) filters are depicted in
FIG. 4 . The transmission of red filter includes an IR spectrum, e.g., wavelength beyond 650 nm. Thus, an IR-cut filter is generally required to cut the transmission of wavelength beyond 650 nm. There are also crosstalk domains inFIG. 4 that may degrade the quality of the color image. - In contrast, partitioned areas of
image sensor FIG. 3A may not include Bayer type color filter array. Referring back toFIG. 2 , partitionedareas - The making of Bayer type color filter array on the image sensor is based on a semiconductor lithographic process requiring very accurate overlay as sensor pitch decreases. Thus the Bayer type color filter coating is a very expensive process. Moreover, rework process will increase risk of damaging the image sensor. On the other hand, the single color filter coating on a glass substrate, e.g., a glass wafer of a wafer-level lens cube, is an inexpensive process without necessity of accurate mask and alignment. Rework on glass substrate is very easy.
- As shown in the example of
FIG. 3A , the first focal length f1 may be different than the second focal length f2. In one example, the first focal length f1 corresponds with light having a first color, such as for example but not limited to red (R), and second focal length f2 corresponds with light having a second color, such as for example but not limited to green (G). Accordingly, a single image having the first color is focused bylens 302 ontoimage sensor 222 and the same single image having the second color is focused bylens 304 ontoimage sensor 224 in accordance with the teachings of the present invention. - Referring briefly back to the example depicted in
FIG. 2 , the red (R) area includes red pixels only, the green (G) area includes green pixels only, and the blue (B) area includes blue pixels only. The clear or C area may include white pixels when no filter is applied, and green pixels when a green filter is applied. A readout system and/or processor (not shown) may rearrange red, green, and blue pixels into Bayer pattern or any pattern for further processing the color signals and forming the color images. C pixels may be use as white pixels for particular processing or simply contribute as green pixels in accordance with the teachings of the present invention. -
FIG. 5 illustrates alens array 400 for the partitioned image sensor in accordance with the teachings of the present invention. The partitioned image sensor may beimage sensor 220 ofFIG. 2 .Lens array 400 may be a 2x2 array havinglow profile lenses lenses lens 402 forms a red image only,lens 404 forms a green image only, andlens 408 forms a blue image only. - In one example, each one of the
lenses FIG. 3A ). In another example, each one of thelenses FIG. 3B ). In yet another example,lenses - Since each
lens lenses FIG. 3A ). The focal length ofC lens 406 may be the same with one oflenses - In another example depicted in
FIG. 3B , since eachlens lens FIG. 3A, FIG. 3B shows a cross-section of low profileimage capture unit 320 including four imaging lenses and four partitioned areas of image sensor in accordance with the teachings of the present invention. The cross-section illustrated inFIG. 3B may correspond with dashed line A-A' ofFIG. 2 . The ROC oflenses lenses lens C lens 406 may be the same with one oflenses - As will be discussed below in yet another example,
lenses lenses FIGS. 7A and 7B ). -
FIG. 6 illustrates a2x2 lens array 500 disposed proximate to apartitioned image sensor 501 in accordance with the teachings of the present invention. In one example,lens array 500 may include individual wafer-level lens cubes image sensor 501 in accordance with the teachings of the present invention. In the depicted example,lenses R lens 502,G lens 504,B lens 506, andC lens 508 may be properly adjusted. However, for the sake of simplicity, only an example without focal length adjustment will be discussed herewith in an example in accordance with the teachings of the present invention. It is appreciated that the embodiment can be extended to include an example with focal length adjustment (e.g., seeFIG. 3A ) as well as an example with lenses having different ROCs (e.g., seeFIG. 3B ) in accordance with the teachings of the present invention. -
FIG. 7A illustrates an example including thecross-section 550 of2x2 lens array 500 in accordance with the teachings of the present invention.Only lens cubes FIG. 7A . The cross-section illustrated inFIG. 7A may correspond with dashed line B-B' ofFIG. 6 . As shown in the depicted example,lens cubes cover glass 510.Partitioned areas cover glass 510, aligned withlens cubes - In one example, each wafer-level lens cube includes at least a glass wafer and a lens on the glass wafer. Typically, each wafer-level lens cube may include a
lens 520 on aglass wafer 522, alens 524 on the other side ofglass wafer 522, alens 528 on aglass wafer 530, alens 532 on the other side ofglass wafer 530,glass wafers spacer 526 betweenglass wafers spacer 518 betweenglass wafer 530 andcover glass 510. - As shown in the depicted example, an IR-
cut filter 702 is disposed on aglass wafer 562 underneath alens 560. IR-cut filter 702 may be multilayer dielectric coatings. For example, the multilayer dielectric coatings may include alternate layers of high and low refractive indexes. Ared color filter 704 is disposed in contact with the other side ofglass wafer 562 betweenglass wafer 562 and alens 564.Red color filter 704 may be a photo-resist coating. The combined transmission spectrum of IR-cut filter 702 andred color filter 704 is depicted inFIG. 8A . In one example, the transmission of wavelengths beyond 650 nm will be cut by IR-cut filter 702. Agreen color filter 706 is disposed in contact withglass wafer 522 betweenglass wafer 522 andlens 524.Green color filter 706 may be a photo-resist coating. The transmission spectrum ofgreen color filter 706 is depicted inFIG. 8 B. - IR-
cut filter 702 andred filter 704 may be formed on either side ofglass wafer 562. Furthermore, IR-cut filter 702 andred filter 704 may be formed on either side of asecond glass wafer 566. Similarly,green filter 706 may be formed on either side ofglass wafer 522, or either side ofsecond glass wafer 530, in accordance with the teachings of the present invention. -
FIG. 7B illustrates thecross-section 600 of2x2 lens array 500 in accordance with the teachings of the present invention.Only lens cubes FIG. 7 B. The cross-section illustrated inFIG. 7B may correspond with dashed line C-C' ofFIG. 6 . As shown in the depicted example,lens cubes cover glass 510.Partitioned areas cover glass 510, aligned withlens cubes - A
blue color filter 708 is disposed in contact with aglass wafer 662 betweenglass wafer 662 and alens 664.Blue color filter 708 may be a photo-resist coating. The transmission spectrum ofblue color filter 708 is depicted inFIG. 8C . A UV-IR-cut filter 710 is disposed on aglass wafer 622 underneath alens 620. UV-IR-cut filter 710 may be multilayer dielectric coatings. For example, the multilayer dielectric coatings may include 30 alternate layers of high and low refractive indexes. The daylight spectrum transmitted through UV-IR-cut filter 710 is depicted inFIG. 8D . The transmission spectra of UV-IR-cut filter 710 for 0°, 25°, 30°, and 35° incident light are depicted inFIG. 8E . For example, UV-IR-cut filter cuts the transmissions of wavelengths longer than 650 nm and shorter than 420 nm. -
Blue filter 708 may be formed on either side ofglass wafer 662, or either side of asecond glass wafer 666. Similarly, UV-IR-cut filter 710 may be formed on either side ofglass wafer 622, or either side of asecond glass wafer 630, in accordance with the teachings of the present invention. - It is apparent that only
R lens cube 502 requires an IR-cut filter.G lens cube 504 andB lens cube 506 require no IR-cut filter.C lens cube 508 uses a combined UV-IR-cut filter and no individual IR-cut filter is required. Thus, a cost saving in IR-cut filter coating can be achieved in accordance with the teachings of the present invention. - In another example, photo-resist coating
red filter 704,green filter 706, andblue filter 708 are replaced with multilayer dielectric coatedred filter 724,green filter 726, andblue filter 728, respectively, as depicted inFIGS. 7A and 7B , in accordance with the teachings of the present invention. The multilayer dielectric coated filters are bandpass filters. The transmission spectra of multilayer dielectric coatedred filter 724,green filter 726, andblue filter 728 are shown inFIG. 9 . For example, a multilayer dielectric coated color filter may include alternate layers of high and low refractive indexes. Sincered filter 724 is a bandpass filter, an IR-cut filter, e.g., IR-cut filter 702, is no longer necessary. Thus, there would be an additional cost savings of an IR-cut filter coating. The bandpass filters will also alleviate the crosstalk of photo-resist filters as shown inFIG. 4 . - In yet another example, the IR-cut filter, the UV-IR-cut filter, and the red, green, and blue filters may appropriately be coated as a
filter 902 over alens 960 on aglass wafer 962 and over the surface ofglass wafer 962 surroundinglens 960, or afilter 904 over alens 964 on the other side ofglass wafer 962 and over the surface onglass wafer 962 surroundinglens 964 as depicted inFIG. 10 , in accordance with the teachings of the present invention.FIG. 10 shows alens cube 900, which may be one of lens cubes depicted inFIGS. 7A and 7B . -
FIG. 11 is a block diagram illustrating animage sensor 800, in accordance with the teachings of the present invention.Image sensor 800 is one example implementation ofimage sensor 220 ofFIG.2 , orimage sensor 501 ofFIG. 6 . The illustrated example ofimage sensor 800 includes apixel array 805,readout circuitry 810,function logic 815, andcontrol circuitry 820.Pixel array 805 may be partitioned into four partitioned areas such as shown inFIG. 2 (not shown inFIG. 11 ). -
Pixel array 805 is a two-dimensional (2D) array of an image sensor or pixels (e.g., pixels P1, P2 ... , Pn). Each pixel may be a CMOS pixel or a CCD pixel. As illustrated, each pixel is arranged into a row (e.g., rows Rl to Ry) and a column (e.g., column Cl to Cx) to acquire image data of a person, place, object, etc., which can then be used to render a 2D image of the person, place, object, etc. In one example,pixel array 805 is a backside illuminated (BSI) image sensor. In one example,pixel array 805 is a frontside illuminated (FSI) image example,pixel array 805 is partitioned into a plurality of partitioned areas. Each partitioned area is covered by a color filter. - After each pixel has acquired its image data or image charge, the image data is readout by
readout circuitry 810 and transferred to functionlogic 815.Readout circuitry 810 may include amplification circuitry, analog-to-digital (ADC) conversion circuitry, or otherwise.Function logic 815 may simply store the image data or even manipulate the image data by applying post image effects (e.g., crop, rotate, remove red eye, adjust brightness, adjust contrast, or otherwise). In one example,readout circuitry 810 may readout a row of image data at a time along readout column lines (illustrated) or may readout the image data using a variety of other techniques (not illustrated), such as a serial readout or a full parallel readout of all pixels simultaneously. -
Control circuitry 820 is coupled topixel array 805 to control operational characteristic ofpixel array 805. For example,control circuitry 820 may generate a shutter signal for controlling image acquisition. In one embodiment, the shutter signal is a global shutter signal for simultaneously enabling all pixels withinpixel array 805 to simultaneously capture their respective image data during a single acquisition window. In an alternative embodiment, the shutter signal is a rolling shutter signal whereby each row, column, or group of pixels is sequentially enabled during consecutive acquisition windows. - It is appreciated that the low profile image capture unit is not limited to 2x2 lens array, any size of lens array is possible. Accordingly, the image sensor is not limited to four partitioned areas, any number of partitioned areas is possible. The partitioned area of image sensor may be square or rectangular. The cross section of lens cube may be circular, ellipse, square, or rectangular. The image sensor may be a CMOS image sensor or a CCD.
- The above description of illustrated examples of the present invention, including what is described in the Abstract, are not intended to be exhaustive or to be limitation to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications are possible without departing from the broader spirit and scope of the present invention. Indeed, it is appreciated that the specific example voltages, currents, frequencies, power range values, times, etc., are provided for explanation purposes and that other values may also be employed in other embodiments and examples in accordance with the teachings of the present invention.
Claims (11)
- An apparatus, comprising:an image sensor including N image sensor regions arranged thereon; andN lens structures included in a lens array disposed proximate to the image sensor, each one of the N lens structures arranged to focus a single image onto a respective one of the N image sensor regions, the N lens structures including a first lens structure having a red color filter, a second lens structure having a green color filter, and a third lens structure having a blue color filter, each one of the N lens structures including a glass wafer and a lens formed on the glass wafer, wherein each one of the red color filter, the green color filter, and the blue color filter is one of coated on the glass wafer underneath the lens and coated over the lens on the glass wafer.
- The apparatus of claim 1 wherein the N lens structures further include a fourth lens structure having a UV-IR-cut filter including multilayer dielectric coatings, wherein the UV-IR-cut filter is one of coated on the glass wafer underneath the lens and coated over the lens on the glass wafer.
- The apparatus of claim 1 wherein the first lens structure further includes an IR-cut filter including multilayer dielectric coatings, wherein the IR-cut filter is one of coated on the glass wafer underneath the lens and coated over the lens on the glass wafer.
- The apparatus of claim 1 wherein the red color filter, the green color filter, and the blue color filter comprise photo-resist coatings.
- The apparatus of claim 1 wherein the red color filter, the green color filter, and the blue color filter comprise multilayer dielectric coatings.
- The apparatus of claim 1 wherein the N lens structures include a first lens structure having a first focal length and positioned the first focal length away from the respective one of the N image sensor regions, a second lens structure having a second focal length and positioned the second focal length away from the respective one of the N image sensor regions, and a third lens structure having a third focal length and positioned the third focal length away from the respective one of the N image sensor regions, wherein the first focal length, the second focal length and the third focal length are different, wherein the first focal length corresponds with light having a red color, wherein the second focal length corresponds with light having a green color and wherein the third focal length corresponds with light having a blue color.
- The apparatus of claim 6 wherein the N lens structures further include a fourth lens structure having a fourth focal length and positioned the fourth focal length away from the respective one of the N image sensor regions, wherein the fourth focal length is substantially equal to one of the first focal length, the second length and the third focal length.
- The apparatus of claim 1 wherein the N lens structures include a first lens structure having a first radius of curvature and positioned a focal length away from the respective one of the N image sensor regions, a second lens structure having a second radius of curvature and positioned the focal length away from the respective one of the N image sensor regions, and a third lens structure having a third radius of curvature and positioned the focal length away from the respective one of the N image sensor regions, wherein the first radius of curvature, the second radius of curvature and the third radius of curvature are different, wherein the first radius of curvature corresponds with light having a red color, wherein the second radius of curvature corresponds with light having a green color and wherein the third radius of curvature corresponds with light having a blue color.
- The apparatus of claim 8 wherein the N lens structures further include a fourth lens structure having a fourth radius of curvature and positioned the focal length away from the respective one of the N image sensor regions, wherein the fourth radius of curvature is substantially equal to one of the first radius of curvature, the second radius of curvature and the third radius of curvature.
- An imaging system, comprising:a pixel array including an image sensor according to any one of the above claims, wherein each one of the N image sensor regions has a plurality of pixels arranged therein; andcontrol circuitry coupled to the pixel array to control operation of the pixel array; andreadout circuitry coupled to the pixel array to readout image data from the plurality of pixels.
- The imaging system of claim 10 further comprising function logic coupled to the readout circuitry to store the single image data readout from each one of the N image sensor regions.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/570,449 US8988566B2 (en) | 2012-08-09 | 2012-08-09 | Lens array for partitioned image sensor having color filters |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2696570A2 true EP2696570A2 (en) | 2014-02-12 |
EP2696570A3 EP2696570A3 (en) | 2014-08-13 |
EP2696570B1 EP2696570B1 (en) | 2019-07-17 |
Family
ID=49083514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP13179183.2A Active EP2696570B1 (en) | 2012-08-09 | 2013-08-02 | Lens array for partitioned image sensor having color filters |
Country Status (4)
Country | Link |
---|---|
US (1) | US8988566B2 (en) |
EP (1) | EP2696570B1 (en) |
CN (1) | CN103579268B (en) |
TW (1) | TWI549273B (en) |
Families Citing this family (59)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11792538B2 (en) | 2008-05-20 | 2023-10-17 | Adeia Imaging Llc | Capturing and processing of images including occlusions focused on an image sensor by a lens stack array |
US8866920B2 (en) | 2008-05-20 | 2014-10-21 | Pelican Imaging Corporation | Capturing and processing of images using monolithic camera array with heterogeneous imagers |
KR101733443B1 (en) | 2008-05-20 | 2017-05-10 | 펠리칸 이매징 코포레이션 | Capturing and processing of images using monolithic camera array with heterogeneous imagers |
US8514491B2 (en) | 2009-11-20 | 2013-08-20 | Pelican Imaging Corporation | Capturing and processing of images using monolithic camera array with heterogeneous imagers |
CN103004180A (en) | 2010-05-12 | 2013-03-27 | 派力肯影像公司 | Architectures for imager arrays and array cameras |
US8878950B2 (en) | 2010-12-14 | 2014-11-04 | Pelican Imaging Corporation | Systems and methods for synthesizing high resolution images using super-resolution processes |
KR101973822B1 (en) | 2011-05-11 | 2019-04-29 | 포토네이션 케이맨 리미티드 | Systems and methods for transmitting and receiving array camera image data |
US20130265459A1 (en) | 2011-06-28 | 2013-10-10 | Pelican Imaging Corporation | Optical arrangements for use with an array camera |
US20130070060A1 (en) | 2011-09-19 | 2013-03-21 | Pelican Imaging Corporation | Systems and methods for determining depth from multiple views of a scene that include aliasing using hypothesized fusion |
JP6140709B2 (en) | 2011-09-28 | 2017-05-31 | ペリカン イメージング コーポレイション | System and method for encoding and decoding bright-field image files |
US9412206B2 (en) | 2012-02-21 | 2016-08-09 | Pelican Imaging Corporation | Systems and methods for the manipulation of captured light field image data |
US9210392B2 (en) | 2012-05-01 | 2015-12-08 | Pelican Imaging Coporation | Camera modules patterned with pi filter groups |
US8791403B2 (en) * | 2012-06-01 | 2014-07-29 | Omnivision Technologies, Inc. | Lens array for partitioned image sensor to focus a single image onto N image sensor regions |
KR20150023907A (en) | 2012-06-28 | 2015-03-05 | 펠리칸 이매징 코포레이션 | Systems and methods for detecting defective camera arrays, optic arrays, and sensors |
US20140002674A1 (en) | 2012-06-30 | 2014-01-02 | Pelican Imaging Corporation | Systems and Methods for Manufacturing Camera Modules Using Active Alignment of Lens Stack Arrays and Sensors |
EP4296963A3 (en) | 2012-08-21 | 2024-03-27 | Adeia Imaging LLC | Method for depth detection in images captured using array cameras |
CN104685513B (en) | 2012-08-23 | 2018-04-27 | 派力肯影像公司 | According to the high-resolution estimation of the feature based of the low-resolution image caught using array source |
US20140092281A1 (en) | 2012-09-28 | 2014-04-03 | Pelican Imaging Corporation | Generating Images from Light Fields Utilizing Virtual Viewpoints |
US9143711B2 (en) | 2012-11-13 | 2015-09-22 | Pelican Imaging Corporation | Systems and methods for array camera focal plane control |
US9462164B2 (en) | 2013-02-21 | 2016-10-04 | Pelican Imaging Corporation | Systems and methods for generating compressed light field representation data using captured light fields, array geometry, and parallax information |
US9253380B2 (en) | 2013-02-24 | 2016-02-02 | Pelican Imaging Corporation | Thin form factor computational array cameras and modular array cameras |
WO2014138697A1 (en) | 2013-03-08 | 2014-09-12 | Pelican Imaging Corporation | Systems and methods for high dynamic range imaging using array cameras |
US8866912B2 (en) | 2013-03-10 | 2014-10-21 | Pelican Imaging Corporation | System and methods for calibration of an array camera using a single captured image |
WO2014164550A2 (en) | 2013-03-13 | 2014-10-09 | Pelican Imaging Corporation | System and methods for calibration of an array camera |
US9888194B2 (en) | 2013-03-13 | 2018-02-06 | Fotonation Cayman Limited | Array camera architecture implementing quantum film image sensors |
US9519972B2 (en) | 2013-03-13 | 2016-12-13 | Kip Peli P1 Lp | Systems and methods for synthesizing images from image data captured by an array camera using restricted depth of field depth maps in which depth estimation precision varies |
US9106784B2 (en) | 2013-03-13 | 2015-08-11 | Pelican Imaging Corporation | Systems and methods for controlling aliasing in images captured by an array camera for use in super-resolution processing |
US9100586B2 (en) | 2013-03-14 | 2015-08-04 | Pelican Imaging Corporation | Systems and methods for photometric normalization in array cameras |
US9578259B2 (en) | 2013-03-14 | 2017-02-21 | Fotonation Cayman Limited | Systems and methods for reducing motion blur in images or video in ultra low light with array cameras |
EP2973476A4 (en) | 2013-03-15 | 2017-01-18 | Pelican Imaging Corporation | Systems and methods for stereo imaging with camera arrays |
US9445003B1 (en) | 2013-03-15 | 2016-09-13 | Pelican Imaging Corporation | Systems and methods for synthesizing high resolution images using image deconvolution based on motion and depth information |
US10122993B2 (en) | 2013-03-15 | 2018-11-06 | Fotonation Limited | Autofocus system for a conventional camera that uses depth information from an array camera |
US9497429B2 (en) | 2013-03-15 | 2016-11-15 | Pelican Imaging Corporation | Extended color processing on pelican array cameras |
CN105579902B (en) * | 2013-09-23 | 2019-06-28 | Lg伊诺特有限公司 | A method of manufacture camera model |
US9898856B2 (en) | 2013-09-27 | 2018-02-20 | Fotonation Cayman Limited | Systems and methods for depth-assisted perspective distortion correction |
CN103557459B (en) * | 2013-11-06 | 2016-03-02 | 郑州中原显示技术有限公司 | The three-primary color LED lamp that light-emitting area is not identical |
WO2015070105A1 (en) | 2013-11-07 | 2015-05-14 | Pelican Imaging Corporation | Methods of manufacturing array camera modules incorporating independently aligned lens stacks |
WO2015074078A1 (en) | 2013-11-18 | 2015-05-21 | Pelican Imaging Corporation | Estimating depth from projected texture using camera arrays |
US9456134B2 (en) | 2013-11-26 | 2016-09-27 | Pelican Imaging Corporation | Array camera configurations incorporating constituent array cameras and constituent cameras |
US10089740B2 (en) | 2014-03-07 | 2018-10-02 | Fotonation Limited | System and methods for depth regularization and semiautomatic interactive matting using RGB-D images |
US20150281601A1 (en) * | 2014-03-25 | 2015-10-01 | INVIS Technologies Corporation | Modular Packaging and Optical System for Multi-Aperture and Multi-Spectral Camera Core |
US9270953B2 (en) | 2014-05-16 | 2016-02-23 | Omnivision Technologies, Inc. | Wafer level camera having movable color filter grouping |
US9521319B2 (en) * | 2014-06-18 | 2016-12-13 | Pelican Imaging Corporation | Array cameras and array camera modules including spectral filters disposed outside of a constituent image sensor |
US10250871B2 (en) | 2014-09-29 | 2019-04-02 | Fotonation Limited | Systems and methods for dynamic calibration of array cameras |
US9942474B2 (en) | 2015-04-17 | 2018-04-10 | Fotonation Cayman Limited | Systems and methods for performing high speed video capture and depth estimation using array cameras |
CN105223756B (en) * | 2015-10-06 | 2018-03-09 | 瑞声光电科技(常州)有限公司 | Array camera lens module |
US10313642B2 (en) * | 2017-01-18 | 2019-06-04 | Omnivision Technologies, Inc. | Imaging system having dual image sensors |
US10482618B2 (en) | 2017-08-21 | 2019-11-19 | Fotonation Limited | Systems and methods for hybrid depth regularization |
US11366011B2 (en) | 2019-02-13 | 2022-06-21 | Viavi Solutions Inc. | Optical device |
WO2021055585A1 (en) | 2019-09-17 | 2021-03-25 | Boston Polarimetrics, Inc. | Systems and methods for surface modeling using polarization cues |
US11525906B2 (en) | 2019-10-07 | 2022-12-13 | Intrinsic Innovation Llc | Systems and methods for augmentation of sensor systems and imaging systems with polarization |
KR20230116068A (en) | 2019-11-30 | 2023-08-03 | 보스턴 폴라리메트릭스, 인크. | System and method for segmenting transparent objects using polarization signals |
WO2021154386A1 (en) | 2020-01-29 | 2021-08-05 | Boston Polarimetrics, Inc. | Systems and methods for characterizing object pose detection and measurement systems |
US11797863B2 (en) | 2020-01-30 | 2023-10-24 | Intrinsic Innovation Llc | Systems and methods for synthesizing data for training statistical models on different imaging modalities including polarized images |
US11953700B2 (en) | 2020-05-27 | 2024-04-09 | Intrinsic Innovation Llc | Multi-aperture polarization optical systems using beam splitters |
US12020455B2 (en) | 2021-03-10 | 2024-06-25 | Intrinsic Innovation Llc | Systems and methods for high dynamic range image reconstruction |
US11290658B1 (en) | 2021-04-15 | 2022-03-29 | Boston Polarimetrics, Inc. | Systems and methods for camera exposure control |
US11954886B2 (en) | 2021-04-15 | 2024-04-09 | Intrinsic Innovation Llc | Systems and methods for six-degree of freedom pose estimation of deformable objects |
US11689813B2 (en) | 2021-07-01 | 2023-06-27 | Intrinsic Innovation Llc | Systems and methods for high dynamic range imaging using crossed polarizers |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6882368B1 (en) | 1999-06-30 | 2005-04-19 | Canon Kabushiki Kaisha | Image pickup apparatus |
JP2002209226A (en) | 2000-12-28 | 2002-07-26 | Canon Inc | Image pickup device |
JP4578797B2 (en) | 2003-11-10 | 2010-11-10 | パナソニック株式会社 | Imaging device |
US7453510B2 (en) * | 2003-12-11 | 2008-11-18 | Nokia Corporation | Imaging device |
US8049806B2 (en) * | 2004-09-27 | 2011-11-01 | Digitaloptics Corporation East | Thin camera and associated methods |
US7068432B2 (en) | 2004-07-27 | 2006-06-27 | Micron Technology, Inc. | Controlling lens shape in a microlens array |
WO2006109638A1 (en) | 2005-04-08 | 2006-10-19 | Konica Minolta Opto, Inc. | Solid-state image pickup element and method for manufacturing same |
US7736939B2 (en) | 2005-07-07 | 2010-06-15 | United Microelectronics Corp. | Method for forming microlenses of different curvatures and fabricating process of solid-state image sensor |
CN100474003C (en) * | 2006-04-04 | 2009-04-01 | 精工爱普生株式会社 | Optical multilayer filter, and electronic apparatus |
US8610806B2 (en) | 2006-08-28 | 2013-12-17 | Micron Technology, Inc. | Color filter array, imagers and systems having same, and methods of fabrication and use thereof |
KR20080049186A (en) | 2006-11-30 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Image sensor and fabrication method thereof |
US20080142685A1 (en) | 2006-12-13 | 2008-06-19 | Gazeley William G | Integrated image sensor having a color-filtering microlens, and related system and method |
US7812869B2 (en) | 2007-05-11 | 2010-10-12 | Aptina Imaging Corporation | Configurable pixel array system and method |
US9419035B2 (en) | 2008-02-11 | 2016-08-16 | Omnivision Technologies, Inc. | Image sensor with color pixels having uniform light absorption depths |
KR101035613B1 (en) | 2008-09-16 | 2011-05-19 | 주식회사 동부하이텍 | CMOS Image sensor |
US8300108B2 (en) | 2009-02-02 | 2012-10-30 | L-3 Communications Cincinnati Electronics Corporation | Multi-channel imaging devices comprising unit cells |
US8514491B2 (en) * | 2009-11-20 | 2013-08-20 | Pelican Imaging Corporation | Capturing and processing of images using monolithic camera array with heterogeneous imagers |
TWM387263U (en) | 2010-02-11 | 2010-08-21 | E Pin Optical Industry Co Ltd | Optical imaging lens and the array thereof |
US8791403B2 (en) | 2012-06-01 | 2014-07-29 | Omnivision Technologies, Inc. | Lens array for partitioned image sensor to focus a single image onto N image sensor regions |
-
2012
- 2012-08-09 US US13/570,449 patent/US8988566B2/en active Active
-
2013
- 2013-07-04 TW TW102124070A patent/TWI549273B/en active
- 2013-07-24 CN CN201310313751.4A patent/CN103579268B/en active Active
- 2013-08-02 EP EP13179183.2A patent/EP2696570B1/en active Active
Non-Patent Citations (1)
Title |
---|
None |
Also Published As
Publication number | Publication date |
---|---|
TW201407757A (en) | 2014-02-16 |
CN103579268A (en) | 2014-02-12 |
EP2696570A3 (en) | 2014-08-13 |
TWI549273B (en) | 2016-09-11 |
US20140043507A1 (en) | 2014-02-13 |
EP2696570B1 (en) | 2019-07-17 |
CN103579268B (en) | 2016-09-07 |
US8988566B2 (en) | 2015-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US8988566B2 (en) | Lens array for partitioned image sensor having color filters | |
JP7171652B2 (en) | Solid-state image sensor and electronic equipment | |
EP2669949B1 (en) | Lens array for partitioned image sensor | |
US9270953B2 (en) | Wafer level camera having movable color filter grouping | |
US10015416B2 (en) | Imaging systems with high dynamic range and phase detection pixels | |
US10297629B2 (en) | Image sensors with in-pixel lens arrays | |
US8530814B2 (en) | Solid-state imaging device with a planarized lens layer method of manufacturing the same, and electronic apparatus | |
US9202833B2 (en) | Imaging systems with baffle grids | |
KR102312964B1 (en) | Image sensor and method for fabricating the same | |
US10187595B2 (en) | Solid-state image sensor | |
US10506187B2 (en) | Image sensor having dual microlenses for each auto-focus (AF) pixel | |
US11323608B2 (en) | Image sensors with phase detection auto-focus pixels | |
US9386203B2 (en) | Compact spacer in multi-lens array module | |
US7297916B1 (en) | Optically improved CMOS imaging sensor structure to lower imaging lens requirements | |
CN102118551A (en) | Imaging device | |
KR102128467B1 (en) | Image sensor and image photograph apparatus including image sensor | |
US9595551B2 (en) | Solid-state imaging device and electronic apparatus | |
US10636825B2 (en) | Shaped color filter | |
TW202412292A (en) | Half quad photodiode (qpd) to improve qpd channel imbalance | |
TW202415087A (en) | Quad photodiode microlens arrangements, and associated systems and methods |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 27/146 20060101ALI20140710BHEP Ipc: H04N 9/04 20060101ALI20140710BHEP Ipc: H04N 5/225 20060101AFI20140710BHEP |
|
17P | Request for examination filed |
Effective date: 20150130 |
|
RBV | Designated contracting states (corrected) |
Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: EXAMINATION IS IN PROGRESS |
|
17Q | First examination report despatched |
Effective date: 20171114 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20190204 |
|
RIN1 | Information on inventor provided before grant (corrected) |
Inventor name: WANG, CHIA-CHING Inventor name: HSU, YUN-CHIANG Inventor name: DENG, JAU-JAN |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602013057836 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 1156898 Country of ref document: AT Kind code of ref document: T Effective date: 20190815 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20190717 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1156898 Country of ref document: AT Kind code of ref document: T Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20191118 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20191017 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20191017 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20191117 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20191018 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190802 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20200224 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20190831 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602013057836 Country of ref document: DE |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
PG2D | Information on lapse in contracting state deleted |
Ref country code: IS |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190802 |
|
26N | No opposition filed |
Effective date: 20200603 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20190831 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20130802 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20190717 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 602013057836 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H04N0005225000 Ipc: H04N0023000000 |
|
P01 | Opt-out of the competence of the unified patent court (upc) registered |
Effective date: 20230420 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20230712 Year of fee payment: 11 Ref country code: CH Payment date: 20230901 Year of fee payment: 11 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20230710 Year of fee payment: 11 Ref country code: DE Payment date: 20230711 Year of fee payment: 11 |