CN103579268B - There is the lens arra of the segmentation imageing sensor of color filter - Google Patents

There is the lens arra of the segmentation imageing sensor of color filter Download PDF

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Publication number
CN103579268B
CN103579268B CN201310313751.4A CN201310313751A CN103579268B CN 103579268 B CN103579268 B CN 103579268B CN 201310313751 A CN201310313751 A CN 201310313751A CN 103579268 B CN103579268 B CN 103579268B
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lens
focal length
filter
lens arrangement
curvature
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CN103579268A (en
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王嘉靖
邓兆展
徐运强
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Omnivision Technologies Inc
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Omnivision Technologies Inc
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N23/00Cameras or camera modules comprising electronic image sensors; Control thereof
    • H04N23/50Constructional details
    • H04N23/55Optical parts specially adapted for electronic image sensors; Mounting thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/1462Coatings
    • H01L27/14621Colour filter arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14625Optical elements or arrangements associated with the device
    • H01L27/14627Microlenses
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14601Structural or functional details thereof
    • H01L27/14632Wafer-level processed structures
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/134Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14683Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685Process for coatings or optical elements

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  • Physics & Mathematics (AREA)
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  • Spectroscopy & Molecular Physics (AREA)
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Abstract

Subject application relates to the lens arra of a kind of segmentation imageing sensor with color filter.A kind of equipment comprises imageing sensor, and described imageing sensor comprises and is arranged in N number of image sensor area thereon.N number of lens arrangement is contained in the lens arra disposed close to described imageing sensor.Each in described N number of lens arrangement is arranged to be focused on by single image in the corresponding one in described N number of image sensor area.Described N number of lens arrangement comprises and has the first lens arrangement of red filter, have the second lens arrangement of green filter and have the 3rd lens arrangement of blue filter.Each in described N number of lens arrangement comprises chip glass and is formed at the lens on described chip glass.Each in described red filter, described green filter and described blue filter is the one in following form: above the described lens being coated on the described chip glass below described lens and being coated on described chip glass.

Description

There is the lens arra of the segmentation imageing sensor of color filter
The reference of related application
Entitled " the lens arra of segmentation imageing sensor that subject application relates on June 1st, 2012 files an application (LENS ARRAY FOR PARTITIONED IMAGE SENSOR) " and it is transferred from the assignee of subject application With No. 13/486,787 patent application case in application.
Technical field
The present invention generally relates to imageing sensor, and the segmentation image more particularly to color filter passes The lens arra of sensor.
Background technology
Image capturing unit generally comprises imageing sensor and imaging len.Imaging len focuses the light on imageing sensor To form image, and imageing sensor converts the light to the signal of telecommunication.The signal of telecommunication exports host electronic from image capturing unit Other unit in system or subsystem.Described electronic system can be mobile phone, computer, digital camera or medical science dress Put.
Along with image capturing unit use in electronic system increases, therefore to image capturing unit feature, capacity and dress The requirement putting size also increases.For example, have increasing need for image capturing unit and there is relatively low profile so that comprising figure Can reduce as the size of population of the electronic system of capturing unit and not sacrifice the quality of captured optical imagery simultaneously.Image The profile of capturing unit can be associated with the distance at the top of the bottom from imageing sensor to imaging len.
Summary of the invention
In an aspect, subject application provides a kind of equipment, comprising: imageing sensor, it comprises layout thereon N number of image sensor area;And N number of lens arrangement, its be contained in close to described imageing sensor dispose saturating In lens array, each in described N number of lens arrangement is arranged to that single image focuses on described N number of image and passes In corresponding one in sensor region, described N number of lens arrangement comprises and has the first lens arrangement of red filter, tool There is the second lens arrangement of green filter and there is the 3rd lens arrangement of blue filter, in described N number of lens arrangement Each comprise chip glass and be formed at the lens on described chip glass, wherein said red filter, described green Each in look filter and described blue filter is the one in following form: be coated on the institute below described lens Above the described lens stating on chip glass and be coated on described chip glass.
In another aspect, subject application provides a kind of imaging system, comprising: pel array, it comprises wherein arranges Having the imageing sensor of N number of image sensor area, each in wherein said N number of image sensor area is at it In be disposed with multiple pixel;N number of lens arrangement, it is contained in the lens arra disposed close to described imageing sensor, Each in described N number of lens arrangement is arranged to be focused on by single image in described N number of image sensor area Corresponding one on, described N number of lens arrangement comprises and has the first lens arrangement of red filter, has green filter Second lens arrangement of device and there is the 3rd lens arrangement of blue filter, each bag in described N number of lens arrangement Containing chip glass and be formed at the lens on described chip glass, wherein said red filter, described green filter and Each in described blue filter is the one in following form: be coated on the described chip glass below described lens Above the described lens gone up and be coated on described chip glass;Control circuit, it is coupled to described pel array to control The operation of described pel array;And reading circuit, it is coupled to described pel array to read image from the plurality of pixel Data.
Accompanying drawing explanation
With reference to describing the non-limiting of the present invention and non-exhaustive embodiments with figure below, wherein unless otherwise defined, pass through Wear each graphic identical reference numerals and refer to same parts.
Figure 1A is the schematic diagram of the image capturing unit comprising imaging len and imageing sensor.
Figure 1B is the schematic diagram of the low profile image capturing unit comprising low profile imaging len and imageing sensor.
Fig. 2 illustrates an example of the imageing sensor with four cut sections according to teachings of the present invention.
Fig. 3 A be illustrate the low profile image capturing unit according to teachings of the present invention an example there is difference Two lens of focal length and the cross section of two cut sections.
Fig. 3 B be illustrate the low profile image capturing unit according to teachings of the present invention an example there is difference Two lens of radius of curvature and the cross section of two cut sections.
Fig. 4 illustrates for red, green and the exemplary transmitted spectrum of the photo anti-corrosion agent material of blue filter.
Fig. 5 illustrates an example of 2 × 2 lens arras of the segmentation imageing sensor according to teachings of the present invention.
Fig. 6 illustrates an example of 2 × 2 lens arras on the segmentation imageing sensor according to teachings of the present invention.
Fig. 7 A illustrates an example of 2 × 2 lens arras on the segmentation imageing sensor according to teachings of the present invention Cross section.
Fig. 7 B illustrates an example of 2 × 2 lens arras on the segmentation imageing sensor according to teachings of the present invention Another cross section.
It is combined with the exemplary of red filter that Fig. 8 A illustrates the IR cut-off filter according to teachings of the present invention Penetrate spectrum.
Fig. 8 B illustrates the exemplary transmitted spectrum of the green filter according to teachings of the present invention.
Fig. 8 C illustrates the exemplary transmitted spectrum of the blue filter according to teachings of the present invention.
Fig. 8 D illustrates the exemplary daylight light being transmitted through UV-IR cut-off filter according to teachings of the present invention Spectrum.
The UV-IR cut-off filter that Fig. 8 E illustrates according to teachings of the present invention enters for 0 °, 25 °, 30 ° and 35 ° Penetrate the exemplary transmitted spectrum of light.
Fig. 9 illustrates red, the green and blue bandpass optical filter of the multi-layer dielectric coating according to teachings of the present invention Exemplary transmitted spectrum.
The lens cube of the lens arra on the segmentation imageing sensor according to teachings of the present invention that Figure 10 illustrates Cross section.
Figure 11 is the block diagram of the example illustrating the imageing sensor according to teachings of the present invention.
Detailed description of the invention
In the following description, state that numerous specific detail is to provide thorough understanding of the present invention.But, art Skill will appreciate that, it is not necessary to use described specific detail to put into practice the present invention.In other example, not yet describe in detail Well-known material or method are to avoid making the present invention obscure.
This specification mentions " embodiment ", " embodiment ", " example " or " example " in the whole text in every case Mean that the special characteristic, structure or the characteristic that describe together with described embodiment or example are contained at least one of the present invention In embodiment.Therefore, in this specification each place in the whole text occur phrase " in one embodiment ", " one In embodiment ", " example " or " example " same embodiment or example may not be referred both to.Additionally, at one or In more than one embodiment or example, described special characteristic, structure or characteristic are combined into any applicable combination and/or subgroup In conjunction.Special characteristic, structure or characteristic may be included in integrated circuit, electronic circuit, combinatorial circuit or provide institute In other applicable assembly of representation function.Additionally it should be appreciated that figure mentioned herein is in order to the skill of art The purpose that art personnel explain, and graphic be not necessarily drawn to scale.
Disclose exemplary methods and the equipment relating to low profile image capturing unit.It will be appreciated that according to teachings of the present invention Low profile image capturing unit can comprise the array of the lens with the indivedual filters being placed on segmentation imageing sensor. Additionally, the quality of the optical imagery not captured for the low profile sacrifice according to teachings of the present invention (for example, it can Express in terms of resolution ratio (that is, the number of pixel) and/or definition).
In order to illustrate, Figure 1A is the image capturing unit 200 comprising imaging len 202 and imageing sensor 204 Schematic diagram.Distance between lens 202 and imageing sensor 204 is about f, and wherein f is the focal length of lens 202. The width of the imageing sensor 204 covered by lens 202 is W, and lens diameter is D.In order to compare, Tu1BZhan Show the schematic diagram of the low profile image capturing unit 210 comprising imaging len 212 and imageing sensor 214.Lens 212 And the distance between imageing sensor 214 is about f/2, wherein f/2 is the focal length of lens 212.Covered by lens 212 The width of imageing sensor 214 is W/2, and lens diameter is D/2.
In low profile image capturing unit, substitute imaging len with low profile imaging len, and do not change imageing sensor. Imageing sensor 204 and 214 is identical image sensor, and two imageing sensors have same pixel array structure. Due to the half of the width that width is imageing sensor 204 of imageing sensor 214, therefore with imageing sensor 204 phase Ratio, imageing sensor 214 will have the pixel of half number in a dimension.In two dimensions, with image sensing Device 204 is compared, and imageing sensor 214 will have 1/4th number pixels.In other words, the image captured The number of pixel is with ratio square the most proportional of the distance between lens to imageing sensor.
Fig. 2 illustrate according to teachings of the present invention have arrange in close proximity to each other four cut sections 222,224, The imageing sensor 220 of 226 and 228.Each cut section 222,224,226 and 228 is by corresponding imaging len (such as, The lens 212 of Figure 1B) cover.In this way, the focal length of imaging len (such as, the lens 212 of Figure 1B) can be image The half of the imaging len (such as, the lens 202 of Figure 1A) during sensor undivided Cheng Sige district.Therefore, four can be used Individual lens and four cut section structure low profile image capturing units of imageing sensor.With original image capturing unit phase Ratio, low profile image capturing unit is by owing to using four districts of imageing sensor to have the most identical resolution ratio (that is, phase With number pixel).The district of imageing sensor can be similar to the imageing sensor 214 of Figure 1B.
In order to illustrate, Fig. 3 A shows and to comprise four imaging lens and imageing sensor according to teachings of the present invention The cross section of the low profile image capturing unit 300 of four cut sections.In an example, illustrated in Fig. 3 A Cross section can be corresponding with the dotted line A-A ' of Fig. 2.Four cut sections of imageing sensor can be the imageing sensor of Fig. 2 The district 222,224,226 and 228 of 220.Fig. 3 A shows only two imaging lens being respectively provided with focal distance f 1 and f2 302 and 304.Similarly, Fig. 3 A shows only two cut sections 222 and 224 of imageing sensor 220.With this side Formula, can maintain resolution ratio (that is, the number of pixel of captured image while of can constructing the image capture system with low profile Mesh).
Being shown in example as illustrated, imaging len 302 is located remotely from the of respective image sensor 222 At one focal distance f 1.Imaging len 304 is located remotely from the second focal distance f 2 of respective image sensor 224.As retouch The example painted is shown, about half that the second focal distance f 2 is focal length time compared with the lens 202 shown in Figure 1A. Therefore, according to teachings of the present invention, the example image capturing unit 300 of Fig. 3 A be low profile image capturing unit with The width making the imageing sensor 222 and 224 covered by lens 302 and 304 is W/2, and lens 302 and 304 Lens diameter be D/2.
Typical image capturing unit can comprise bayer-like color filter array on the image sensor.Bayer-like color filters Device array is generally made up of photo anti-corrosion agent material.Fig. 4 describes for red (R), green (G) and blue (B) filter The transmitted spectrum of photo anti-corrosion agent material.The transmission of red filter comprises IR spectrum (such as, the ripple more than 650nm Long).It is thus typically necessary to IR cut-off filter ends the transmission of the wavelength more than 650nm.There is also in Fig. 4 can Make the crosstalk territory of the degrading quality of coloured image.
For comparing, the cut section of the imageing sensor 222 and 224 of Fig. 3 A can not comprise bayer-like color filter battle array Row.Referring back to Fig. 2, cut section 222,224,226 and 228 can be respectively assigned to redness (R), green (G), thoroughly Bright (C) and blue (B) district.Red color area can be covered by single red filter, and green district can be covered by single green filter, Blue region can be covered by single blue filter, and transparent or C district can not be covered by any filter or can be by single green Filter covers.
The making of the bayer-like color filter array on imageing sensor is to need very based on reducing with transducer spacing The semiconductor lithography process accurately covered.Therefore, bayer-like color filter is applied to much more expensive technique.Additionally, Reprocessing technique damages the risk of imageing sensor by increasing.On the other hand, glass substrate (such as, wafer-level lens cube The chip glass of body) on monochromatic filter be applied to the inexpensive process that need not accurately shelter and be directed at.In glass substrate Reprocessing is very easy.
As shown in the example of Fig. 3 A, the first focal distance f 1 may differ from the second focal distance f 2.In an example, first Focal distance f 1 is corresponding with the light with the first color (such as, for example but be not limited to redness (R)), and the second focal distance f 2 with The light with the second color (such as, for example but be not limited to green (G)) is corresponding.Therefore, according to teachings of the present invention, The single image with the first color is focused on imageing sensor 222 by lens 302, and has the identical of the second color Single image is focused on imageing sensor 224 by lens 304.
Briefly referring back to example depicted in figure 2, red (R) district only comprises red pixel, and green (G) district only wraps Containing green pixel, and blue (B) district only comprises blue pixel.Transparent or C district can comprise white when not applying filter Pixel, and comprise green pixel when applying green filter.Read-out system and/or processor (displaying) can by red, Green and blue pixel is re-arranged to Bayer pattern or any pattern for processing colour signal further and forming coloured silk Color image.According to teachings of the present invention, C pixel can be used as white pixel and for particular procedure or contributes simply as green Color pixel.
Fig. 5 illustrates the lens arra 400 of the segmentation imageing sensor according to teachings of the present invention.Described segmentation image Sensor can be the imageing sensor 220 of Fig. 2.Lens arra 400 can be have be respectively assigned to redness (R), green (G), 2 × 2 arrays of the low profile lens 402,404,406 and 408 in transparent (C) and blue (B) district.In other words, lens 402, each in 404,406 and 408 is arranged to single image focuses on redness (R), green (G), transparent (C) And in the corresponding one in blue (B) district image sensor area.Therefore, lens 402 only form red image, lens 404 only form green image, and lens 408 only form blue image.
In an example, each in lens 402,404,406 and 408 has and just focuses on correspondence image biography The different respective focal that the specific color of the light on sensor region (for example, with reference to Fig. 3 A) is corresponding.In another example, thoroughly Each in mirror 402,404,406 and 408 has and just focuses on correspondence image sensor region (for example, with reference to figure The different corresponding radius of curvature (ROC) that the specific color of the light on 3B) is corresponding.In a further example, lens 402,404, 406 and 408 can have identical focal length and identical ROC.
Owing to each lens 402,404,406 and 408 individually form single coloured image, therefore can be by individually Adjust the focal distance between each lens and correspondence image sensor and improve the optical quality of each individual images (such as, Definition).Therefore, in an example, according to teachings of the present invention (for example, with reference to Fig. 3 A), can be according to the ripple of light The focal length between each and corresponding divided image sensor in long individually adjustment lens 402,404,406 and 408 Distance is to obtain high quality graphic.The focal length of C lens 406 can be identical with the one in lens 402,404 and 408.
In another example described in figure 3b, owing to each lens 402,404,406 and 408 individually form Single coloured image, therefore can by being formed as each lens 402,404,406 and 408 there is different ROC and Improve the optical quality (such as, definition) of each individual images.It is similar to Fig. 3 A, Fig. 3 B show according to the present invention's Low profile image capturing unit 320 transversal of four cut sections comprising four imaging lens and imageing sensor of teaching Face.Cross section illustrated in Fig. 3 B can be corresponding with the dotted line A-A ' of Fig. 2.The ROC of lens 402 and 404 For different, so that lens 402 become identical with the focal length of 404.By so carrying out, according to teachings of the present invention, The focal length of each lens 402,404,406 and 408 can be identical at individual color, and therefore need not adjust individually often Focal distance between one lens and correspondence image sensor.Although the radius of curvature of R, G and B lens is different, but C The ROC of lens 406 can be identical with the one in lens 402,404 and 408.
As hereafter discussed in a further example, according to teachings of the present invention (for example, with reference to Fig. 7 A and 7B), lens 402, 404,406 and 408 can have identical ROC, and the focal length difference of lens 402,404,406 and 408 can be little And it is insignificant.
Fig. 6 illustrates 2 × 2 lens arrays disposed close to segmentation imageing sensor 501 according to teachings of the present invention Row 500.In an example, lens arra 500 can comprise individual wafer level lens cube 502,504,506 and 508 (they are identical lens) are divided so that single image to focus on the corresponding of imageing sensor 501 according to teachings of the present invention Cut in the corresponding one in district.In the illustrated case, lens 502,504,506 and 508 be respectively assigned to R, G, B and C district.As previously described, can suitably adjust R lens 502, G lens 504, B lens 506 and C The focal position of lens 508.But, for simplicity, will discuss according in the example of teachings of the present invention herein The most not there is the example of Focussing.It will be appreciated that embodiment expanded can have Jiao to comprise according to teachings of the present invention Away from the example (for example, with reference to Fig. 3 A) adjusted and the example (for example, with reference to Fig. 3 B) with lens with different ROC.
Fig. 7 A illustrates the example of the cross section 550 comprising 2 × 2 lens arras 500 according to teachings of the present invention. Fig. 7 A only shows lens cube 502 and 504.Cross section illustrated in Fig. 7 A can be with the dotted line of Fig. 6 B-B ' is corresponding.Being shown in example as depicted, lens cube 502 and 504 is placed on cover glass 510. The cut section 512 and 514 of single image sensor is below cover glass 510, respectively with lens cube 502 and 504 Alignment.
In an example, each wafer-level lens cube comprises the lens at least chip glass and chip glass.Logical Often, each wafer-level lens cube can comprise: lens 520, and it is on chip glass 522;Lens 524, its On the opposite side of chip glass 522;Lens 528, it is on chip glass 530;Lens 532, it is at chip glass On the opposite side of 530;Chip glass 522 and 530;Distance piece 526, it is between chip glass 522 and 530;And Distance piece 518, it is between chip glass 530 and cover glass 510.
Being shown in example as depicted, IR cut-off filter 702 is placed on chip glass 562 below lens 560. IR cut-off filter 702 can be multi-layer dielectric coating.For example, multi-layer dielectric coating can comprise the highest and low Index layer.Red filter 704 is placed in chip glass 562 and lens contiguously with the opposite side of chip glass 562 Between 564.Red filter 704 can be photoresist coating.Fig. 8 A describes IR cut-off filter 702 and red The combined transmitted spectrum of look filter 704.In an example, the transmission of the wavelength more than 650nm will be cut by IR Only filter 702 ends.Green filter 706 and chip glass 522 are placed in chip glass 522 and lens contiguously Between 524.Green filter 706 can be photoresist coating.Fig. 8 B describes the transmission of green filter 706 Spectrum.
IR cut-off filter 702 and red filter 704 can be formed on the either side of chip glass 562.Additionally, IR Cut-off filter 702 and red filter 704 can be formed on the either side of the second chip glass 566.Similarly, root According to teachings of the present invention, green filter 706 can be formed at either side or second chip glass 530 of chip glass 522 Either side on.
Fig. 7 B illustrates the cross section 600 of 2 × 2 lens arras 500 according to teachings of the present invention.In Fig. 7 B only Show lens cube 506 and 508.Cross section illustrated in Fig. 7 B can be corresponding with the dotted line C-C ' of Fig. 6. Being shown in example as depicted, lens cube 506 and 508 is placed on cover glass 510.Single image passes The cut section 612 and 614 of sensor, below cover glass 510, is directed at lens cube 506 and 508 respectively.
Blue filter 708 and chip glass 662 are placed between chip glass 662 and lens 664 contiguously.Blue Filter 708 can be photoresist coating.Fig. 8 C describes the transmitted spectrum of blue filter 708.UV-IR cuts Only filter 710 is placed on chip glass 622 below lens 620.UV-IR cut-off filter 710 can be multilayer electricity Dielectric coated.For example, multi-layer dielectric coating can comprise 30 and low-index layers the highest.Fig. 8 D describes It is transmitted through the spectrum of sunlight of UV-IR cut-off filter 710.In Fig. 8 E describe UV-IR cut-off filter 710 for The transmitted spectrum of 0 °, 25 °, 30 ° and 35 ° incident light.For example, UV-IR cut-off filter make to be longer than 650nm and It is shorter than the transmission cut-off of the wavelength of 420nm.
Blue filter 708 can be formed on the either side of chip glass 662 or the either side of the second chip glass 666. Similarly, according to teachings of the present invention, UV-IR cut-off filter 710 can be formed at chip glass 622 either side or On the either side of the second chip glass 630.
It is clear that only R lens cube 502 needs IR cut-off filter.G lens cube 504 and B lens Cube 506 need not IR cut-off filter.C lens cube 508 use combined UV-IR cut-off filter and Need not indivedual IR cut-off filter.Therefore, the one-tenth in the coating of IR cut-off filter can be realized according to teachings of the present invention This saving.
In another example, according to teachings of the present invention, respectively with the red filter 724 of multi-layer dielectric coating, green Look filter 726 and blue filter 728 substitute photoresist coating red filter 704, green filter 706 And blue filter 708, as Fig. 7 A and 7B describes.The filter of multi-layer dielectric coating is bandpass optical filter. In Fig. 9, red filter 724, green filter 726 and the blue filter 728 of the coating of displaying multi-layer dielectric is saturating Penetrate spectrum.For example, the color filter of multi-layer dielectric coating can comprise the highest and low-index layer.Due to red Look filter 724 is bandpass optical filter, and therefore IR cut-off filter (such as, IR cut-off filter 702) is no longer required 's.Therefore, the extra cost that there is the coating of IR cut-off filter is saved.Bandpass optical filter also will alleviate as in Fig. 4 The crosstalk of the photoresist filter shown.
In a further example, according to teachings of the present invention, IR cut-off filter, UV-IR cut-off filter and redness, Green and blue filter can suitably be applied on the lens 960 on chip glass 962 and the cincture of chip glass 962 On filter 902 on the surface of lens 960, or the lens 964 on the opposite side of chip glass 962 and chip glass The filter 904 on the surface of lens 964 on 962, as depicted in fig. 10.It can be Fig. 7 A that Figure 10 shows And the lens cube 900 of the one in the lens cube described in 7B.
Figure 11 is the block diagram illustrating the imageing sensor 800 according to teachings of the present invention.Imageing sensor 800 is One exemplary embodiment of the imageing sensor 501 of the imageing sensor 220 or Fig. 6 of Fig. 2.Imageing sensor 800 Illustrated example comprise pel array 805, reading circuit 810, function logic 815 and control circuit 820. Pel array 805 may be partitioned into the most demonstrated in Figure 2 four cut section (not showing in Figure 11).
Pel array 805 is imageing sensor or two dimension (2D) array of pixel (such as, pixel Pl, P2 ..., Pn). Each pixel can be cmos pixel or CCD pixel.As illustrated, each pixel is arranged and is embarked on journey (such as, OK R1 to Ry) and row (such as, row C1 to Cx) to gather the view data of people, place, object etc., then can use institute State view data and reproduce the 2D image of described people, place, object etc..In an example, pel array 805 is the back of the body Illuminated (BSI) imageing sensor.In an example, pel array 805 is front illuminated (FSI) imageing sensor, pixel battle array Row 805 are divided into multiple cut section.Each cut section is covered by a color filter.
After each pixel has gathered its view data or image charge, described view data is read by reading circuit 810 And it is sent to function logic 815.Reading circuit 810 can comprise amplifying circuit, analog (ADC) change-over circuit or other. Function logic 815 can only store described view data or (such as, prune even with figure image effect after application, rotates, moves Except blood-shot eye illness, adjust brightness, adjust contrast or other) handle described view data.In an example, reading circuit 810 can once read a line view data (illustrated) along reading alignment maybe can use other technology multiple (not scheme to explain orally Bright) read simultaneously view data, such as series read-out or all pixels full parellel read.
Control circuit 820 is coupled to pel array 805 to control the operating characteristic of pel array 805.For example, control Circuit 820 processed can produce the shutter signal for controlling IMAQ.In one embodiment, described shutter signal is for using All pixels in simultaneously enabling pel array 805 are to capture its respective image data during single collecting window simultaneously Global shutter signal.In alternative embodiments, described shutter signal is for each so as to sequentially enabling during continuous acquisition window The rolling shutter signal of the pixel of row, column or group.
It will be appreciated that low profile image capturing unit is not limited to 2 × 2 lens arras, the lens arra of any size is can Can.Therefore, imageing sensor is not limited to four cut sections, and any number cut section is possible.Image sensing The cut section of device can be square or rectangle.The cubical cross section of lens can be circular, oval, square or square Shape.Imageing sensor can be cmos image sensor or CCD.
The described above of illustrated example of the present invention comprising the content described in abstract of invention is not intended to Exhaustive or limit disclosed in precise forms.Although describing the specific of the present invention for illustrating property purpose herein Embodiment and example, but in the case of without departing substantially from the relatively broader spirit of the present invention and scope, various equivalent modifications are possible 's.Indeed, it should be appreciated that provide specific example voltage, electric current, frequency, electric power range for illustrative purposes Value, time etc., and also can use other value in the other embodiments according to teachings of the present invention and example.

Claims (17)

1. for capturing an equipment for image, comprising:
Imageing sensor, it comprises and is arranged in N number of image sensor area thereon;And
N number of lens arrangement, it is contained in the lens arra disposed close to described imageing sensor, described N number of lens Each in structure is arranged to focus on single image in the corresponding one in described N number of image sensor area, The second lens knot that described N number of lens arrangement comprises first lens arrangement with red filter, has green filter Structure and have the 3rd lens arrangement of blue filter, each in described N number of lens arrangement comprises chip glass and shape Lens on chip glass described in Cheng Yu, wherein said red filter, described green filter and described blue filter In each be the one in following form: be coated on the described chip glass below described lens and be coated on described Above described lens on chip glass, wherein said first lens arrangement comprises IR cut-off filter further, described IR cut-off filter comprises multi-layer dielectric coating, and wherein said IR cut-off filter is the one in following form: be coated with Above the described lens being overlying on the described chip glass below described lens and be coated on described chip glass.
Equipment the most according to claim 1, wherein said N number of lens arrangement comprises the 4th lens arrangement further, Described 4th lens arrangement has the UV-IR cut-off filter comprising multi-layer dielectric coating, and wherein said UV-IR cuts Only filter is the one in following form: is coated on the described chip glass below described lens and is coated on described glass Above described lens on glass wafer.
Equipment the most according to claim 1, wherein said red filter, described green filter and described indigo plant Look filter includes photoresist coating.
Equipment the most according to claim 1, wherein said red filter, described green filter and described indigo plant Look filter includes multi-layer dielectric coating.
Equipment the most according to claim 1, wherein said N number of lens arrangement comprises: described first lens arrangement, It has the first focal length and be located remotely from described N number of image sensor area described the first of described corresponding one At focal length;Described second lens arrangement, it has the second focal length and is located remotely from described N number of image sensor area Described corresponding one described second focal length at, and described 3rd lens arrangement, it has the 3rd focal length and is positioned remote Away from described 3rd focal length of the described corresponding one in described N number of image sensor area, wherein said first focal length, Described second focal length and described 3rd focal length are different, and wherein said first focal length is corresponding, wherein with the light with redness Described second focal length is corresponding with having viridescent light, and wherein said 3rd focal length is corresponding with the light with blueness.
Equipment the most according to claim 5, wherein said N number of lens arrangement comprises the 4th lens arrangement further, Described 4th lens arrangement have the 4th focal length and be located remotely from described N number of image sensor area described accordingly At described 4th focal length of one, wherein said 4th focal length is substantially equal to described first focal length, described second focal length and institute State the one in the 3rd focal length.
Equipment the most according to claim 1, wherein said N number of lens arrangement comprises: described first lens arrangement, It has first curvature radius and the focal length of described corresponding one being located remotely from described N number of image sensor area Place;Described second lens arrangement, it has second curvature radius and is located remotely from described N number of image sensor area Described corresponding one described focal length at;And described 3rd lens arrangement, it has the 3rd radius of curvature and is positioned remote Away from the described focal length of the described corresponding one in described N number of image sensor area, wherein said first curvature radius, Described second curvature radius and described 3rd radius of curvature are different, wherein said first curvature radius with have redness Light is corresponding, and wherein said second curvature radius is corresponding with the viridescent light of tool, and wherein said 3rd radius of curvature with have Blue light is corresponding.
Equipment the most according to claim 7, wherein said N number of lens arrangement comprises the 4th lens arrangement further, Described 4th lens arrangement have the 4th radius of curvature and be located remotely from described N number of image sensor area described At the described focal length of corresponding one, wherein said 4th radius of curvature be substantially equal to described first curvature radius, described second One in radius of curvature and described 3rd radius of curvature.
9. an imaging system, comprising:
Pel array, it comprises the imageing sensor being wherein disposed with N number of image sensor area, wherein said N number of Each in image sensor area is disposed with multiple pixel wherein;
N number of lens arrangement, it is contained in the lens arra disposed close to described imageing sensor, described N number of lens Each in structure is arranged to focus on single image in the corresponding one in described N number of image sensor area, The second lens knot that described N number of lens arrangement comprises first lens arrangement with red filter, has green filter Structure and have the 3rd lens arrangement of blue filter, each in described N number of lens arrangement comprises chip glass and shape Lens on chip glass described in Cheng Yu, wherein said red filter, described green filter and described blue filter In each be the one in following form: be coated on the described chip glass below described lens and be coated on described Above described lens on chip glass, wherein said first lens arrangement comprises IR cut-off filter further, described IR cut-off filter comprises multi-layer dielectric coating, and wherein said IR cut-off filter is the one in following form: be coated with Above the described lens being overlying on the described chip glass below described lens and be coated on described chip glass;
Control circuit, it is coupled to described pel array to control the operation of described pel array;And
Reading circuit, it is coupled to described pel array to read view data from the plurality of pixel.
Imaging system the most according to claim 9, it farther includes function logic, the coupling of described function logic To described reading circuit to store the single image data that each from described N number of image sensor area reads.
11. imaging systems according to claim 9, wherein said N number of lens arrangement comprises the 4th lens further Structure, described 4th lens arrangement has the UV-IR cut-off filter comprising multi-layer dielectric coating, wherein said UV-IR cut-off filter is the one in following form: is coated on the described chip glass below described lens and coats Above described lens on described chip glass.
12. imaging systems according to claim 9, wherein said red filter, described green filter and institute State blue filter and include photoresist coating.
13. imaging systems according to claim 9, wherein said red filter, described green filter and institute State blue filter and include multi-layer dielectric coating.
14. imaging systems according to claim 9, wherein said N number of lens arrangement comprises: described first lens Structure, it has the described of the first focal length and the described corresponding one that is located remotely from described N number of image sensor area At first focal length;Described second lens arrangement, it has the second focal length and is located remotely from described N number of imageing sensor district At described second focal length of the described corresponding one in territory;And described 3rd lens arrangement, it has the 3rd focal length and location At away from described 3rd focal length of the described corresponding one in described N number of image sensor area, wherein said first is burnt Being different away from, described second focal length and described 3rd focal length, wherein said first focal length is corresponding with the light with redness, Wherein said second focal length is corresponding with having viridescent light, and wherein said 3rd focal length is corresponding with the light with blueness.
15. imaging systems according to claim 14, it is saturating that wherein said N number of lens arrangement comprises the 4th further Mirror structure, described 4th lens arrangement has the 4th focal length and is located remotely from the institute in described N number of image sensor area Stating at described 4th focal length of corresponding one, wherein said 4th focal length is substantially equal to described first focal length, described second Jiao Away from and described 3rd focal length in one.
16. imaging systems according to claim 9, wherein said N number of lens arrangement comprises: described first lens Structure, it has first curvature radius and the described corresponding one that is located remotely from described N number of image sensor area At focal length;Described second lens arrangement, it has second curvature radius and is located remotely from described N number of imageing sensor district At the described focal length of the described corresponding one in territory;And described 3rd lens arrangement, it has the 3rd radius of curvature and location At the described focal length away from the described corresponding one in described N number of image sensor area, wherein said first, second And the 3rd radius of curvature be different, wherein said first curvature radius with have redness light corresponding, wherein said second Radius of curvature is corresponding with having viridescent light, and wherein said 3rd radius of curvature is corresponding with the light with blueness.
17. imaging systems according to claim 16, it is saturating that wherein said N number of lens arrangement comprises the 4th further Mirror structure, described 4th lens arrangement has the 4th radius of curvature and is located remotely from described N number of image sensor area Described corresponding one described focal length at, wherein said 4th radius of curvature is substantially equal to described first curvature radius, institute State the one in second curvature radius and described 3rd radius of curvature.
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