EP2580775A4 - High productivity thin film deposition method and system - Google Patents
High productivity thin film deposition method and systemInfo
- Publication number
- EP2580775A4 EP2580775A4 EP11793204.6A EP11793204A EP2580775A4 EP 2580775 A4 EP2580775 A4 EP 2580775A4 EP 11793204 A EP11793204 A EP 11793204A EP 2580775 A4 EP2580775 A4 EP 2580775A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- thin film
- deposition method
- film deposition
- high productivity
- productivity thin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007736 thin film deposition technique Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45585—Compression of gas before it reaches the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation by radiant heating of the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US35304210P | 2010-06-09 | 2010-06-09 | |
US38915410P | 2010-10-01 | 2010-10-01 | |
PCT/US2011/039877 WO2011156657A2 (en) | 2010-06-09 | 2011-06-09 | High productivity thin film deposition method and system |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2580775A2 EP2580775A2 (en) | 2013-04-17 |
EP2580775A4 true EP2580775A4 (en) | 2014-05-07 |
Family
ID=45098679
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11793204.6A Withdrawn EP2580775A4 (en) | 2010-06-09 | 2011-06-09 | High productivity thin film deposition method and system |
Country Status (4)
Country | Link |
---|---|
US (1) | US9870937B2 (en) |
EP (1) | EP2580775A4 (en) |
KR (2) | KR101369282B1 (en) |
WO (1) | WO2011156657A2 (en) |
Families Citing this family (28)
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US8399331B2 (en) | 2007-10-06 | 2013-03-19 | Solexel | Laser processing for high-efficiency thin crystalline silicon solar cell fabrication |
US8193076B2 (en) | 2006-10-09 | 2012-06-05 | Solexel, Inc. | Method for releasing a thin semiconductor substrate from a reusable template |
US8168465B2 (en) | 2008-11-13 | 2012-05-01 | Solexel, Inc. | Three-dimensional semiconductor template for making high efficiency thin-film solar cells |
US9076642B2 (en) | 2009-01-15 | 2015-07-07 | Solexel, Inc. | High-Throughput batch porous silicon manufacturing equipment design and processing methods |
US8906218B2 (en) | 2010-05-05 | 2014-12-09 | Solexel, Inc. | Apparatus and methods for uniformly forming porous semiconductor on a substrate |
US8673081B2 (en) | 2009-02-25 | 2014-03-18 | Crystal Solar, Inc. | High throughput multi-wafer epitaxial reactor |
US8298629B2 (en) | 2009-02-25 | 2012-10-30 | Crystal Solar Incorporated | High throughput multi-wafer epitaxial reactor |
US9318644B2 (en) | 2009-05-05 | 2016-04-19 | Solexel, Inc. | Ion implantation and annealing for thin film crystalline solar cells |
CN102844883B (en) | 2010-02-12 | 2016-01-20 | 速力斯公司 | For the manufacture of the two-sided reusable template of the Semiconductor substrate of photocell and microelectronic component |
KR101369282B1 (en) | 2010-06-09 | 2014-03-04 | 솔렉셀, 인크. | High productivity thin film deposition method and system |
EP2710639A4 (en) | 2011-05-20 | 2015-11-25 | Solexel Inc | Self-activated front surface bias for a solar cell |
KR20140057214A (en) | 2011-05-27 | 2014-05-12 | 크리스탈솔라,인코포레이티드 | Silicon wafers by epitaxial deposition |
US9548378B2 (en) * | 2012-02-09 | 2017-01-17 | GlobalFoundries, Inc. | Epitaxial channel formation methods and structures |
WO2013159062A1 (en) * | 2012-04-19 | 2013-10-24 | Solexel, Inc. | Temperature calibration and control for semiconductor reactors |
KR101487409B1 (en) * | 2013-07-19 | 2015-01-29 | 주식회사 엘지실트론 | An epitaxial reactor |
US11414759B2 (en) * | 2013-11-29 | 2022-08-16 | Taiwan Semiconductor Manufacturing Co., Ltd | Mechanisms for supplying process gas into wafer process apparatus |
WO2015161225A1 (en) | 2014-04-18 | 2015-10-22 | Applied Materials, Inc. | Apparatus for susceptor temperature verification and methods of use |
US10196741B2 (en) | 2014-06-27 | 2019-02-05 | Applied Materials, Inc. | Wafer placement and gap control optimization through in situ feedback |
KR101648309B1 (en) * | 2015-06-03 | 2016-08-12 | 경희대학교 산학협력단 | Chemical vapor deposition chamber and the chemical vapor deposition apparatus comprising the same |
KR20170034984A (en) | 2015-09-21 | 2017-03-30 | 삼성전자주식회사 | Dummy wafer, a method of forming thin film and a method of a semiconductor device |
US11111600B1 (en) * | 2016-12-02 | 2021-09-07 | Svagos Technik, Inc. | Process chamber with resistive heating |
US11486038B2 (en) | 2019-01-30 | 2022-11-01 | Applied Materials, Inc. | Asymmetric injection for better wafer uniformity |
CN110257793A (en) * | 2019-07-04 | 2019-09-20 | 深圳市捷佳伟创新能源装备股份有限公司 | Tilt the filming equipment of conveying tray |
US11032945B2 (en) * | 2019-07-12 | 2021-06-08 | Applied Materials, Inc. | Heat shield assembly for an epitaxy chamber |
JP7376693B2 (en) * | 2019-09-09 | 2023-11-08 | アプライド マテリアルズ インコーポレイテッド | Processing system and method of supplying reactant gases |
CN112838144B (en) * | 2021-01-22 | 2024-03-19 | 无锡松煜科技有限公司 | Technological method for optimizing uniformity on pyramid suede |
CN114899122B (en) * | 2022-02-16 | 2023-04-07 | 安泊智汇半导体设备(上海)有限责任公司 | Semiconductor chip packaging bubble removing equipment and bubble removing method |
CN116536759B (en) * | 2023-06-25 | 2023-09-26 | 合肥芯胜半导体有限公司 | Method for growing graded layer by molecular beam epitaxy |
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- 2011-06-09 WO PCT/US2011/039877 patent/WO2011156657A2/en active Application Filing
- 2011-06-09 KR KR1020137009928A patent/KR20130051013A/en not_active Application Discontinuation
- 2011-06-09 EP EP11793204.6A patent/EP2580775A4/en not_active Withdrawn
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Also Published As
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KR101369282B1 (en) | 2014-03-04 |
EP2580775A2 (en) | 2013-04-17 |
KR20130051013A (en) | 2013-05-16 |
WO2011156657A2 (en) | 2011-12-15 |
KR20130027037A (en) | 2013-03-14 |
WO2011156657A3 (en) | 2012-06-28 |
US20120085278A1 (en) | 2012-04-12 |
US9870937B2 (en) | 2018-01-16 |
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