EP2543076A2 - Procédé de dopage d'un substrat semi-conducteur et cellule photovoltaïque à dopage en deux étapes - Google Patents

Procédé de dopage d'un substrat semi-conducteur et cellule photovoltaïque à dopage en deux étapes

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Publication number
EP2543076A2
EP2543076A2 EP11711262A EP11711262A EP2543076A2 EP 2543076 A2 EP2543076 A2 EP 2543076A2 EP 11711262 A EP11711262 A EP 11711262A EP 11711262 A EP11711262 A EP 11711262A EP 2543076 A2 EP2543076 A2 EP 2543076A2
Authority
EP
European Patent Office
Prior art keywords
semiconductor substrate
solar cell
less
heavily doped
doping
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP11711262A
Other languages
German (de)
English (en)
Inventor
Andreas Teppe
Matthias Geiger
Reinhold Schlosser
Adolf MÜNZER
Jan Schöne
Jörg ISENBERG
Tino KÜHN
Steffen Keller
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Centrotherm Photovoltaics AG
Original Assignee
Centrotherm Photovoltaics AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centrotherm Photovoltaics AG filed Critical Centrotherm Photovoltaics AG
Publication of EP2543076A2 publication Critical patent/EP2543076A2/fr
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1872—Recrystallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H01L21/02675—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention relates to a method for doping a semiconductor substrate according to the preamble of claim 1 and to a solar cell according to the preamble of claim 12.
  • WO 2006/012840 proposes a method in which the used laser beam in a complex to be produced line focus with high aspect ratio, that is, with an order of magnitude greater height than the width of the line focus is focused on the semiconductor substrate. This method and the apparatus requirements for its implementation are complex and therefore expensive.
  • the present invention has the object of providing a method according to the preamble of claim 1 for Verhe- to provide supply with which the defect entry can be cost-effectively reduced in the semiconducting ⁇ tersubstrat.
  • the invention is based on the object to provide a solar cell with ⁇ a two-stage doping available, which is low cost to manufacture and has a verbes ⁇ serten efficiency.
  • the inventive method for doping a semiconductor substrate provides that the semiconductor substrate is heated by radiation and thereby Be ⁇ Do- in heated regions animal material from a dopant source into the Halbleitersub ⁇ strat is diffused. In the heating of the Halbleitersub ⁇ strats by the irradiation of the laser radiation an area fraction of the semiconductor substrate is melted and recrystallized, which is less than 10% of a total area of all irradiated areas.
  • More doped regions serve as a selective emitter ⁇ to, good electrical conductivity between a solar cell substrate used as a semiconductor substrate and disposed thereon a metallization to manufacture and thus to avoid losses during the transfer of the generated current largely. While it has hitherto been assumed in the prior art that a significant layer resistance reduction in the more heavily doped regions is required for this, it has unexpectedly been found that the contact resistance can be greatly reduced even with a comparatively low sheet resistance reduction with the method according to the invention. so that the desired good electrical conductivity between the solar cell substrate and disposed thereon a metallization can be prepared, so the associated contact resistance can be verrin ⁇ device.
  • the semiconductor substrate can be irradiated directly with the laser radiation.
  • one arranged on the Halbleitersub ⁇ strat layer can be irradiated, for example egg ⁇ ne phosphoric or borosilicate glass layer, which is referred to briefly as a P or B-glass layer in the following.
  • a P or B-glass layer in the following.
  • the on the semiconductor substrate angeord ⁇ designated layer is irradiated directly, but can vary depending on the used wavelength of the laser radiation and the thickness of the layer used, but laser radiation into surface reach the semiconductor substrate, there absorbed ⁇ and ensure heating of the semiconductor substrate.
  • a heat transfer from the disposed on the semiconductor substrate layer adjacent in Regio ⁇ NEN of the semiconductor substrate acting ⁇ be a heating of the semiconductor substrate in adjacent to the irradiated surface regions.
  • the already er Franciscon ⁇ te, disposed on the semiconductor substrate P-glass or B may be used glass layers. How it is applied to the semiconductor substrate, is irrelevant. Be Silizi ⁇ umsubstrate used as semiconductor substrates, they can be formed in a known phosphoric or Bordiffusio ⁇ ⁇ nen at play, by. Alternatively, as a dopant egg ne dopant solution is ⁇ classified on the semiconductor substrate. Furthermore, it is possible, inter alia, to arrange the semiconductor substrate during the irradiation in a dopant-containing atmosphere. In practice, it has proven effective to heat the semiconductor substrate having ⁇ means of local exposure to laser radiation locally and explode constitutionaldiffun- locally dopant in the heated areas. In this way, cost-effective two-stage Do ⁇ ttechnikstechnik can be formed, in particular two-stage ge emitter of solar cells, which are often referred to as selective emitters.
  • the semiconductor substrate is not melted during the irradiation with laser radiation. According to the previous view it would have been assumed that in this way no two-stage doping can be made. It has, however, shown that even with completeness ended avoid melting and hence the back ⁇ clearly critical defect formation recrystallization in more heavily doped regions of a two-stage or multi-stage doping good contact resistances are produced Kings ⁇ nen.
  • FIG. 6 illustrates this on the basis of test results. In the experiments on which these results were based, silicon wafers, which had a sheet resistance R s of (100 ⁇ 10) ⁇ / sq before local irradiation with laser radiation, which is referred to here for short as laser diffusion, formed the starting point. The contact resistance R c before laser diffusion was over 100 m ⁇ cm 2 .
  • the contact resistances achieved after the laser diffusion make it possible to form electrical contacts between the semiconductor substrate and metal-containing screen printing pastes with good conductivity, so that the efficiency of the solar cells can be improved in terms of cost. If, in addition, the sheet resistance or only slightly reduced in the heated preparation ⁇ chen, the spectral sensitivity of these areas remain relatively high despite the Reducing ⁇ th contact resistance, which is able to improve We ⁇ ciency addition, if light incident in parts of the heated areas can. If silicon substrates are used as semiconductor substrates, in particular silicon wafers, then a green laser radiation has proven itself, in particular one with a wavelength of 515 nm or 532 nm.
  • a development of the method according to the invention provides that a semiconductor substrate provided at least in sections with a surface texturing is used and by the irradiation with the laser radiation, structure peaks of the surface texturing over a cross-sectional area of less than 1 pm are melted, preferably over a cross-sectional area of less than 0.25 pm 2 . Ange ⁇ molten parts of the structure peaks are subsequently recrystallized. Said cross-sectional area extends approximately perpendicular to an incident direction of the laser beam. Radiation.
  • the surface texturing can be basically configured in any known per se, insbeson ⁇ particular wet chemical.
  • monocrystalline or multicrystalline silicon wafers are used as semiconductor substrates and the surface texturing is formed with an alkaline or acidic etching solution.
  • the light coupling can be increased in the semiconductor substrate, which has an advantageous effect on the efficiency of solar cells.
  • SEN process more heavily doped regions of a two-stage doping are formed by local diffusion of dopant in the heated areas.
  • the ⁇ particular as selective emitter called two-stage Emit ⁇ terdotieronne.
  • the weaker doped regions of the two-stage doping can be formed, for example, by a planar diffusion carried out before the application of the method, in particular by a diffusion of dopant from a solution containing dopant and applied to the semiconductor substrate or by tube diffusion.
  • a silicon wafer is preferably used in the method according to the invention as well as in the solar cell according to the invention.
  • the method according to the invention can be easily integrated into existing manufacturing processes for semiconductor components.
  • it can be cost-effectively integrated into known Solarzellenfer ⁇ operating procedure, and combined with other process steps because the cell front side can be processed independently of the rear of the cell.
  • using the method according to the invention it is possible to form a selective emitter on the front side of the solar cells and their rear sides by means of dielectric
  • the solar cell according to the invention has a so ⁇ larzellensubstrat at least from ⁇ section provided with a surface texturing and a two-stage doping.
  • Substructure tips objects are understood to mean the cross sections, at least from ⁇ -Section rejuvenate zellensub- strat with increasing distance from the Solar.
  • Such a solar cell is cost-effectively produced with the Inventive ⁇ proper method.
  • the surface texturing and the two-stage doping which are preferably as selective Emitter executed, allow high levels of efficiency. Since the Strukturspit zen surface texturing over a cross-sectional area of less than 1 pm 2 away melted and recrystallized, low defect densities can be realized in more heavily doped areas, which has a positive effect on the efficiency of the solar cell.
  • the solar cell substrate in the more heavily doped regions of the two-stage doping has a contact resistance of 10 m ⁇ cm 2 or less. Furthermore, it has in the more heavily doped regions of the two-stage doping a layer resistance which is at least 50% of the prevailing at the more weakly doped portions of the two-stage doping Schichtwiderstands- value, preferably at least 70% and particularly be ⁇ vorzugt at least 90% of the doped in weaker areas the two-stage doping prevailing sheet resistance value. This allows a good spectral sensitivity of the solar cell substrate in the more heavily doped regions and thus an improvement in efficiency.
  • An advantageous embodiment variant of this development provides that metallizations formed on the more heavily doped regions are made narrower than the more heavily doped regions on which they are formed. As a result ⁇ which falls during operation of the solar light on a part of the heavily doped regions. However, due to the only moderate to ge ⁇ slightly reduces sheet resistance in the more do ⁇ oriented units, these have a good spectral sensitivity recom- on, so that at most results in low efficiency losses over narrow executed heavily doped regions. Due to the more heavily doped regions widened compared to the metallizations, however, the manufacturing advantages set out above result in a lower accuracy requirement in the adjustment or alignment of the metallizations to the associated more heavily doped regions of the two-stage doping. In the following the invention will be explained in more detail with reference to figures. The same effect Ele ⁇ elements are herein denoted by the same reference numerals where appropriate. Show it:
  • Figure 1 Schematic representation of a first embodiment of the inventive method
  • Figure 2 is a schematic diagram of a second embodiment of the method according to the invention, wel ⁇ chem, the semiconductor substrate is not melted.
  • Figure 3 Schematic representation of a first variant of
  • FIG. 5 Schematic representation of a surface texturing with and without melted structure tips
  • Figure 6 contact and film resistors according to the imple ⁇ out the method according to the invention
  • Figure 7 scanning electron micrograph of a semiconductor substrate with surface texturing ⁇ after the process according to the invention
  • Figure 8 An embodiment of a solar cell according to the invention
  • Figure 9 Enlarged partial view of a plan view of the
  • FIG. 10 Scanning electron micrograph of a semiconductor substrate with surface texturing before carrying out the method according to the invention
  • FIG. 11 shows scanning electron micrograph of a semiconductor substrate with surface texturing ⁇ by carrying out the method according to the invention
  • FIG. 12 Scanning electron micrograph of a semiconductor substrate with surface texturing after carrying out the method according to the invention
  • FIG. 1 shows a schematic diagram of a first exemplary embodiment of the method according to the invention.
  • a surface texturing is formed on a solar cell substrate used as a semiconductor substrate 10.
  • a phosphorus diffusion 12 in which a weaker doping surface is formed on the surface of the solar cell substrate.
  • the Phosphordiffu ⁇ sion 12 can take place in known manner, ⁇ example, by a POCl3 -Rschreibendiffusion.
  • a phosphorus-containing solution can be spun onto a front side of the solar cell substrate and dopant can be diffused from this solution into the solar cell substrate.
  • the method according to the invention is not limited to the use of phosphorus or another n-type dopant.
  • Reason- additionally also p-dopants can be used, for example, may be provided instead of the phosphorus diffusion 10 is a Bordif ⁇ fusion.
  • a phosphosilicate glass layer is formed during the Phos ⁇ phordiffusion 12, which is briefly referred to as P-glass layer. This is subsequently irradiated with laser radiation in metallization regions of the front side of the solar cell substrate, that is to say those regions in which the front-side metallization of the solar cell will later be arranged.
  • FIG. 4 shows an impression of such an irradiation process.
  • This P-glass layer 54 may have been formed, for example, in the above-described phosphorus diffusion 12.
  • dopant from the P glass layer 54 has already been diffused into the solar cell substrate 50, and in this way a continuous, less heavily doped region 56 is formed.
  • the P-glass layer 54 is irradiated with laser radiation 60 in an irradiated region 62. Thereby, the P-glass layer 54 as well as adjacent thereto devisfestna ⁇ forth region 52 of the substrate 50 heats a locally.
  • the heating of the solar cell substrate 50 in the heated region 52 can be effected by absorption of laser radiation 60 and / or heat transfer effects from the P-glass layer 54 to the solar cell ⁇ substrate 50.
  • phosphorus from the P-glass layer 54 is diffused into the heated region 52 of the solar cell substrate 50, so that a more heavily doped region 58 is formed there.
  • the solar cell substrate in the course of irradiation of the P glass layer, is melted in an area fraction of less than 10% of the irradiated total area. 16. Transferring this to the representation of FIG. 4 would mean that a part of the heated Area 52 is melted. In the further course of the process according to FIG. 1, the melted-in parts of the solar cell substrate are recrystallized. This is followed by removal of the P glass layer. Furthermore, the front side of the solar cell substrate with a coating provided Sili ziumnitrid- 24. Furthermore, the Metallmaschinesbe- be rich, WUR trained in which heavily doped areas ⁇ the metallized 26. This metallization can be done in any manner known per se in principle.
  • FIG. 2 shows a further exemplary embodiment of the method according to the invention. This differs from the procedural ⁇ ren of Figure 1 in that is entirely dispensed with the fusion 16 of the solar cell substrate.
  • the representation of the weaker 56 and more heavily doped regions 58 by means of the dashed line in Figure 4 to understand.
  • the more heavily doped region 58 may have only a modified contact resistance with respect to the less heavily doped region 56.
  • the more heavily doped region 58 may differ from the less doped region 56 in that the sheet resistance in the more heavily doped region 58 is reduced from the sheet resistance value prevailing in the less doped region 56.
  • the amount of reduction of the sheet resistance in the more heavily doped region depends on the extent to which the solar cell substrate in the heated region 52 is fused and recrystallized. This he concludes ⁇ from the representation of Figure 6 and has been explained in more detail above.
  • the solar cell substrate 50 can have a surface texturing both in the irradiation variant of FIG. 3 and in the irradiation variant of FIG. 4, but this is not absolutely necessary.
  • the embodiment of the radiation in accordance with Figure 3 differs from the un ⁇ irradiation variant according to figure 4 is that in the variant according Figure 3, the Solarzellensub ⁇ strat 50 is irradiated directly with the laser radiation 60th Instead of the P-glass layer 54 known from FIG. 4, a dopant-containing atmosphere could serve as the dopant source from which dopant is diffused into the heated region 52.
  • the method according to the invention can thus be used flexibly both in coated and uncoated solar cell substrates.
  • FIGS. 1 and 2 can be formed, for example, by wet-chemical texturing etching of the solar cell substrate.
  • ⁇ in alkaline as well as acidic Texturiseriten Ver ⁇ application can find.
  • Surface textures made with acidic texture etch solutions are sometimes referred to as iso-textures.
  • FIG. 5 shows in the left half of the picture in two partial diagrams a) and b) a surface texture, as can be formed by means of an alkaline texture etching solution on a monocrystalline silicon wafer.
  • the partial representation a) shows a plan view of such a surface texturing 73, the partial representation b) a perspective view of this surface texturing 73.
  • the generated pyramid structures of the surface texturing 73 typically have a height designated as texture height h in the range of 3 pm to 15 pm.
  • the invention can also be used without difficulty in multicrystalline materials, in particular multicrystalline silicon materials. Instead of the pyramid structures shown in FIG. 5, depending on the etching solution used, surface texturing with other geometrical shapes then results. In the production of surface texturing on multicrystalline silicon materials, especially acidic texture etching solutions have proven to be successful.
  • the structure of the tips 74 of the microwaventextu ⁇ turing other hand are a cross-sectional area 78 is away ⁇ melted.
  • the partial representation c) and d) show the result of such a procedure.
  • the tapered structure tips 74 in the partial representations a) and b) melted and recrystallized structure pits 76 are now present.
  • the structure peaks of the surface texturing 73 are melted over a cross-sectional area 78 which is less than 1 pm 2 , preferably less than 0.25 pm 2 .
  • illustration ⁇ riert Figure 7 which shows a scanning electron micrograph of a surface texturing by carrying out the process according to the invention.
  • the structural tips were not or at least very little melted.
  • FIGS. 10 to 12 show the situation described more clearly in the images with a larger magnification. While FIG. 10 shows a scanning electron micrograph of a surface texturing before carrying out the method according to the invention, FIGS. 11 and 12 show scanning electron micrographs of surface texturing after carrying out the method according to the invention. As can be seen in FIGS. 11 and 12, during the implementation of the method according to the invention, the structure tips were melted very little or not at all.
  • Figure 8 shows a schematic representation of afindsbei ⁇ play of the solar cell according to the invention 70.
  • This includes a so ⁇ larzellensubstrat 50 on which liziumusion preferably by a Si- is formed.
  • the solar cell 70 a two-stage doping, which is formed of the more heavily doped region 58 and weakly doped areas 56th
  • the more heavily doped region 58 differs from the less heavily doped regions 56 in that a lower contact resistance prevails in the more heavily doped region 58.
  • the sheet resistance in the more heavily doped region may be reduced compared to the less heavily doped regions.
  • the layer ⁇ resistance in the more heavily doped regions 58 is at least 50% of the prevailing in weakly doped areas sheet resistance value, preferably at least 70% DIE ses value and particularly preferably 90% or more of the conditions prevailing in schisse ⁇ cher doped regions sheet resistance value. In this way, a comparatively high spectral sensitivity can also be realized in the more heavily doped regions.
  • FIG. 8 shows in a top view an enlarged Diagramdarstel ⁇ development of the portion A of the solar cell 70 of Figure 8.
  • the solar cell has a 70 surface-chentextur mich 73. Their structure tips 76 are intact in the left half of the picture. This left half of the picture shows the surface texturing 73 in a more weakly doped region 56.
  • the structure 76 of the surface texturing peaks 73 are schmtts simulation a cross 78 of less than 1 pm, preferably, melted by Weni ⁇ ger than 0.25 pm 2 away and recrystallized.
  • the hö ⁇ forth is the spectral sensitivity of the solar cell substrate in those portions of the heavily doped regions 58 which are not covered by the metallization , which affects po ⁇ sitive on the efficiency of the solar cell 70th
  • monocrystalline or multicrystalline silicon materials can be used as a semiconductor or solar cell substrate monocrystalline or multicrystalline Ma ⁇ terialien.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
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  • Life Sciences & Earth Sciences (AREA)
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  • Recrystallisation Techniques (AREA)

Abstract

L'invention concerne un procédé de dopage d'un substrat semi-conducteur (50), selon lequel le substrat semi-conducteur (50) est chauffé par exposition (14) à un rayonnement laser (60) et, dans les zones chauffées (52), le dope est diffusé (16) depuis une source (54) de dope à l'intérieur du substrat semi-conducteur (50), et selon lequel une fraction superficielle du substrat semi-conducteur (50), représentant moins de 10% de la surface totale de toutes les zones (62) exposées au rayonnement, est fondue (18) et recristallisée (20) lors du chauffage du substrat semi-conducteur (50) par exposition (14) au rayonnement laser (60). L'invention concerne également une cellule photovoltaïque.
EP11711262A 2010-03-03 2011-03-03 Procédé de dopage d'un substrat semi-conducteur et cellule photovoltaïque à dopage en deux étapes Withdrawn EP2543076A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102010010221 2010-03-03
DE102010010813A DE102010010813A1 (de) 2010-03-03 2010-03-09 Verfahren zur Dotierung eines Halbleitersubstrats und Solarzelle mit zweistufiger Dotierung
PCT/DE2011/075033 WO2011107092A2 (fr) 2010-03-03 2011-03-03 Procédé de dopage d'un substrat semi-conducteur et cellule photovoltaïque à dopage en deux étapes

Publications (1)

Publication Number Publication Date
EP2543076A2 true EP2543076A2 (fr) 2013-01-09

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KR20130108271A (ko) 2010-08-02 2013-10-02 센트로테에름 포토볼타익스 아게 셀렉티브 에미터를 구비한 태양전지의 생산방법
DE102010033030A1 (de) 2010-08-02 2012-02-02 Centrotherm Photovoltaics Ag Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102010054182A1 (de) 2010-09-03 2012-03-08 Centrotherm Photovoltaics Ag Verfahren zur Herstellung einer Solarzelle mit einem selektiven Emitter
DE102011050214A1 (de) 2011-05-09 2012-11-15 Centrotherm Photovoltaics Ag Verfahren zur Herstellung einer Solarzelle mit einer mehrstufigen Dotierung
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US20130014819A1 (en) 2013-01-17
WO2011107092A2 (fr) 2011-09-09
WO2011107092A3 (fr) 2012-01-12
CN103038898A (zh) 2013-04-10
KR20130021365A (ko) 2013-03-05

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