EP2405494A3 - Light emitting device, light emitting device package, and lighting system including the same - Google Patents
Light emitting device, light emitting device package, and lighting system including the same Download PDFInfo
- Publication number
- EP2405494A3 EP2405494A3 EP11175397.6A EP11175397A EP2405494A3 EP 2405494 A3 EP2405494 A3 EP 2405494A3 EP 11175397 A EP11175397 A EP 11175397A EP 2405494 A3 EP2405494 A3 EP 2405494A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- light emitting
- emitting device
- lighting system
- type semiconductor
- conductive type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 230000004888 barrier function Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020100066396A KR101064025B1 (en) | 2010-07-09 | 2010-07-09 | Light emitting device, light emitting device package and lighting system |
KR1020100068122A KR101659359B1 (en) | 2010-07-14 | 2010-07-14 | Light Emitting Device |
KR1020100076758A KR101134406B1 (en) | 2010-08-10 | 2010-08-10 | Light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2405494A2 EP2405494A2 (en) | 2012-01-11 |
EP2405494A3 true EP2405494A3 (en) | 2014-01-22 |
Family
ID=44759408
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP11175397.6A Withdrawn EP2405494A3 (en) | 2010-07-09 | 2011-07-26 | Light emitting device, light emitting device package, and lighting system including the same |
Country Status (5)
Country | Link |
---|---|
US (2) | US8421075B2 (en) |
EP (1) | EP2405494A3 (en) |
JP (1) | JP6244075B2 (en) |
CN (1) | CN102315344B (en) |
TW (1) | TWI566429B (en) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI649895B (en) | 2010-04-30 | 2019-02-01 | 美國波士頓大學信託會 | High-efficiency ultraviolet light-emitting diode with variable structure position |
TWI566429B (en) * | 2010-07-09 | 2017-01-11 | Lg伊諾特股份有限公司 | Light emitting device |
JP2013125816A (en) * | 2011-12-14 | 2013-06-24 | Toshiba Corp | Semiconductor light-emitting element |
US8723189B1 (en) | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
KR101886437B1 (en) * | 2012-04-26 | 2018-08-07 | 엘지디스플레이 주식회사 | Nitride semiconductor light emitting device and method for fabricating the same |
KR101960791B1 (en) * | 2012-09-26 | 2019-03-21 | 엘지이노텍 주식회사 | Light emitting device |
DE102012217681A1 (en) * | 2012-09-27 | 2014-03-27 | Osram Opto Semiconductors Gmbh | Optoelectronic component and method for operating an optoelectronic component |
KR101963220B1 (en) * | 2012-10-10 | 2019-03-28 | 엘지이노텍 주식회사 | Light emitting device |
CN103107253B (en) * | 2013-02-04 | 2016-02-10 | 中国科学院物理研究所 | A kind of light emitting diode epitaxial structure |
CN103268912B (en) * | 2013-04-23 | 2017-05-03 | 沈光地 | Multiple-active-area high-efficiency optoelectronic device |
US9667933B2 (en) | 2013-07-01 | 2017-05-30 | Omnivision Technologies, Inc. | Color and infrared filter array patterns to reduce color aliasing |
US9692992B2 (en) | 2013-07-01 | 2017-06-27 | Omnivision Technologies, Inc. | Color and infrared filter array patterns to reduce color aliasing |
DE102013107969B4 (en) * | 2013-07-25 | 2020-04-09 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
US9774839B2 (en) * | 2013-08-30 | 2017-09-26 | Glasses.Com Inc. | Systems and methods for color correction of images captured using a mobile computing device |
CN106165124B (en) * | 2014-03-27 | 2018-10-02 | 佳能株式会社 | The light-source system of luminaire including luminaire and the Optical coherence tomography analyzer including light-source system |
CN105226145B (en) * | 2014-06-23 | 2019-05-31 | 中国科学院物理研究所 | Quantum well structure, light emitting diode epitaxial structure and light emitting diode |
DE102014117611A1 (en) | 2014-12-01 | 2016-06-02 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip |
KR101651923B1 (en) * | 2014-12-31 | 2016-08-29 | 최운용 | Light Emitting Diode With A High Operating Voltage And Method Of Manufacturing The Same |
DE102016101046A1 (en) * | 2016-01-21 | 2017-07-27 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip and method for producing an optoelectronic semiconductor chip |
EP3444841B1 (en) * | 2016-04-15 | 2020-04-08 | LG Innotek Co., Ltd. | Light-emitting device |
US10043941B1 (en) | 2017-01-31 | 2018-08-07 | International Business Machines Corporation | Light emitting diode having improved quantum efficiency at low injection current |
CN114868262A (en) * | 2019-11-18 | 2022-08-05 | 艾维森纳科技有限公司 | High speed and multi-contact light emitting diode for data communication |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6245089A (en) * | 1985-08-22 | 1987-02-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
US5473173A (en) * | 1993-05-21 | 1995-12-05 | Sharp Kabushiki Kaisha | Quantum well structure having differentially strained quantum well layers |
DE102007044439A1 (en) * | 2007-09-18 | 2009-03-19 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip with quantum well structure |
EP2144306A1 (en) * | 2008-07-09 | 2010-01-13 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor light-emitting device and epitaxial wafer |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05102604A (en) * | 1991-10-11 | 1993-04-23 | Fuji Xerox Co Ltd | Semiconductor laser device |
JPH1174621A (en) * | 1997-08-29 | 1999-03-16 | Toshiba Corp | Nitride group semiconductor luminous element |
KR19990056735A (en) | 1997-12-29 | 1999-07-15 | 김영환 | Laser diode |
JP2001196701A (en) | 2000-01-12 | 2001-07-19 | Kyoto Semiconductor Corp | Semiconductor laser |
JP3763754B2 (en) | 2001-06-07 | 2006-04-05 | 豊田合成株式会社 | Group III nitride compound semiconductor light emitting device |
KR100674858B1 (en) * | 2005-07-07 | 2007-01-29 | 삼성전기주식회사 | White light emitting device |
KR100809215B1 (en) | 2006-11-21 | 2008-02-29 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
KR100826422B1 (en) | 2006-11-21 | 2008-04-29 | 삼성전기주식회사 | Nitride semiconductor light emitting device |
KR100862497B1 (en) * | 2006-12-26 | 2008-10-08 | 삼성전기주식회사 | Nitride semiconductor device |
US7649195B2 (en) * | 2007-06-12 | 2010-01-19 | Seoul Opto Device Co., Ltd. | Light emitting diode having active region of multi quantum well structure |
KR100887050B1 (en) * | 2007-12-06 | 2009-03-04 | 삼성전기주식회사 | Nitride semiconductor device |
KR101018217B1 (en) * | 2008-10-01 | 2011-02-28 | 삼성엘이디 주식회사 | Nitride semiconductor device |
TWI566429B (en) * | 2010-07-09 | 2017-01-11 | Lg伊諾特股份有限公司 | Light emitting device |
-
2011
- 2011-07-05 TW TW100123629A patent/TWI566429B/en active
- 2011-07-07 US US13/177,766 patent/US8421075B2/en active Active
- 2011-07-08 JP JP2011151956A patent/JP6244075B2/en active Active
- 2011-07-11 CN CN201110198498.3A patent/CN102315344B/en active Active
- 2011-07-26 EP EP11175397.6A patent/EP2405494A3/en not_active Withdrawn
-
2013
- 2013-03-26 US US13/850,344 patent/US8779425B2/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6245089A (en) * | 1985-08-22 | 1987-02-27 | Matsushita Electric Ind Co Ltd | Semiconductor laser device |
US5473173A (en) * | 1993-05-21 | 1995-12-05 | Sharp Kabushiki Kaisha | Quantum well structure having differentially strained quantum well layers |
DE102007044439A1 (en) * | 2007-09-18 | 2009-03-19 | Osram Opto Semiconductors Gmbh | Optoelectronic semiconductor chip with quantum well structure |
EP2144306A1 (en) * | 2008-07-09 | 2010-01-13 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor light-emitting device and epitaxial wafer |
Also Published As
Publication number | Publication date |
---|---|
US8779425B2 (en) | 2014-07-15 |
EP2405494A2 (en) | 2012-01-11 |
US8421075B2 (en) | 2013-04-16 |
JP2012019218A (en) | 2012-01-26 |
TW201208113A (en) | 2012-02-16 |
JP6244075B2 (en) | 2017-12-06 |
US20130228746A1 (en) | 2013-09-05 |
TWI566429B (en) | 2017-01-11 |
US20120007040A1 (en) | 2012-01-12 |
CN102315344A (en) | 2012-01-11 |
CN102315344B (en) | 2015-11-25 |
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Owner name: LG INNOTEK CO., LTD. |
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