EP2325694A4 - Composition de résine radio-sensible et procédé de formation d'un motif de réserve - Google Patents
Composition de résine radio-sensible et procédé de formation d'un motif de réserveInfo
- Publication number
- EP2325694A4 EP2325694A4 EP09813128A EP09813128A EP2325694A4 EP 2325694 A4 EP2325694 A4 EP 2325694A4 EP 09813128 A EP09813128 A EP 09813128A EP 09813128 A EP09813128 A EP 09813128A EP 2325694 A4 EP2325694 A4 EP 2325694A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- radiation
- resin composition
- resist pattern
- formation method
- pattern formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005855 radiation Effects 0.000 title 1
- 230000007261 regionalization Effects 0.000 title 1
- 239000011342 resin composition Substances 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2041—Exposure; Apparatus therefor in the presence of a fluid, e.g. immersion; using fluid cooling means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008235509 | 2008-09-12 | ||
PCT/JP2009/065875 WO2010029982A1 (fr) | 2008-09-12 | 2009-09-10 | Composition de résine radio-sensible et procédé de formation d'un motif de réserve |
Publications (3)
Publication Number | Publication Date |
---|---|
EP2325694A1 EP2325694A1 (fr) | 2011-05-25 |
EP2325694A4 true EP2325694A4 (fr) | 2012-07-18 |
EP2325694B1 EP2325694B1 (fr) | 2017-11-08 |
Family
ID=42005232
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP09813128.7A Active EP2325694B1 (fr) | 2008-09-12 | 2009-09-10 | Composition de résine radio-sensible et procédé de formation d'un motif de réserve |
Country Status (7)
Country | Link |
---|---|
US (1) | US20110212401A1 (fr) |
EP (1) | EP2325694B1 (fr) |
JP (1) | JP5360065B2 (fr) |
KR (1) | KR101701523B1 (fr) |
CN (1) | CN102150083B (fr) |
TW (1) | TWI524135B (fr) |
WO (1) | WO2010029982A1 (fr) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5277128B2 (ja) * | 2008-09-26 | 2013-08-28 | 富士フイルム株式会社 | 液浸露光用ポジ型レジスト組成物及びパターン形成方法 |
JP5402809B2 (ja) | 2009-04-21 | 2014-01-29 | セントラル硝子株式会社 | トップコート組成物 |
JP5223775B2 (ja) * | 2009-05-25 | 2013-06-26 | セントラル硝子株式会社 | 液浸レジスト用撥水性添加剤 |
JP5386236B2 (ja) | 2009-06-01 | 2014-01-15 | 東京応化工業株式会社 | ポジ型レジスト組成物及びレジストパターン形成方法 |
WO2010140637A1 (fr) | 2009-06-04 | 2010-12-09 | Jsr株式会社 | Composition de résine sensible au rayonnement, polymère et procédé de formation de motif de résist |
CN103472674B (zh) | 2009-09-18 | 2017-04-26 | Jsr株式会社 | 放射线敏感性树脂组合物、抗蚀图案形成方法、聚合物和聚合性化合物 |
WO2011062168A1 (fr) * | 2009-11-18 | 2011-05-26 | Jsr株式会社 | Composition de résine sensible au rayonnement, polymère et procédé de formation de motif de réserve |
WO2011122590A1 (fr) * | 2010-03-30 | 2011-10-06 | Jsr株式会社 | Composition de photoréserve et procédé de formation de motifs de réserve |
TWI457318B (zh) | 2010-10-05 | 2014-10-21 | Shinetsu Chemical Co | 含氟酯單體及其製造方法、與含氟酯高分子化合物 |
JP5940800B2 (ja) * | 2010-12-15 | 2016-06-29 | 住友化学株式会社 | レジスト組成物及びレジストパターンの製造方法 |
KR20140007833A (ko) * | 2011-02-04 | 2014-01-20 | 제이에스알 가부시끼가이샤 | 포토레지스트 조성물 |
WO2013047536A1 (fr) * | 2011-09-30 | 2013-04-04 | Jsr株式会社 | Composition de résine photosensible et procédé de formation d'un motif de réserve |
JP6581811B2 (ja) * | 2015-06-15 | 2019-09-25 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
JP6670555B2 (ja) * | 2015-06-15 | 2020-03-25 | 東京応化工業株式会社 | レジスト組成物及びレジストパターン形成方法 |
US10324377B2 (en) | 2015-06-15 | 2019-06-18 | Tokyo Ohka Kogyo Co., Ltd. | Resist composition and method of forming resist pattern |
JP6579044B2 (ja) | 2015-06-30 | 2019-09-25 | 信越化学工業株式会社 | レジスト組成物及びパターン形成方法 |
US11016386B2 (en) * | 2018-06-15 | 2021-05-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Photoresist composition and method of forming photoresist pattern |
EP3919981A4 (fr) * | 2019-01-28 | 2022-03-30 | FUJIFILM Corporation | Composition de résine sensible à la lumière actinique ou au rayonnement, film de réserve, procédé de formation de motif, et procédé de production de dispositif électronique |
JP7149241B2 (ja) * | 2019-08-26 | 2022-10-06 | 信越化学工業株式会社 | レジスト材料及びパターン形成方法 |
CN112925167A (zh) * | 2021-01-26 | 2021-06-08 | 宁波南大光电材料有限公司 | 具有光酸活性的光刻胶树脂及光刻胶 |
CN116046941B (zh) * | 2022-12-30 | 2024-06-25 | 徐州博康信息化学品有限公司 | 一种光刻胶树脂中残余单体含量的测试方法 |
Family Cites Families (28)
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JPH0612452B2 (ja) | 1982-09-30 | 1994-02-16 | ブリュ−ワ−・サイエンス・インコ−ポレイテッド | 集積回路素子の製造方法 |
SG43691A1 (en) * | 1991-06-28 | 1997-11-14 | Ibm | Top antireflective coating films |
JP3751065B2 (ja) | 1995-06-28 | 2006-03-01 | 富士通株式会社 | レジスト材料及びレジストパターンの形成方法 |
JP3712218B2 (ja) * | 1997-01-24 | 2005-11-02 | 東京応化工業株式会社 | 化学増幅型ホトレジスト組成物 |
JP3042618B2 (ja) | 1998-07-03 | 2000-05-15 | 日本電気株式会社 | ラクトン構造を有する(メタ)アクリレート誘導体、重合体、フォトレジスト組成物、及びパターン形成方法 |
JP3763693B2 (ja) | 1998-08-10 | 2006-04-05 | 株式会社東芝 | 感光性組成物及びパターン形成方法 |
JP4131062B2 (ja) | 1998-09-25 | 2008-08-13 | 信越化学工業株式会社 | 新規なラクトン含有化合物、高分子化合物、レジスト材料及びパターン形成方法 |
JP3444821B2 (ja) | 1999-10-06 | 2003-09-08 | 富士写真フイルム株式会社 | ポジ型フォトレジスト組成物 |
JP2002308866A (ja) | 2001-04-09 | 2002-10-23 | Mitsubishi Chemicals Corp | ラクトン構造を有する多環式化合物 |
JP3991191B2 (ja) | 2001-06-14 | 2007-10-17 | 信越化学工業株式会社 | ラクトン構造を有する新規(メタ)アクリレート化合物、重合体、フォトレジスト材料、及びパターン形成法 |
JP3972190B2 (ja) | 2001-06-15 | 2007-09-05 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
JP2003113174A (ja) | 2001-07-30 | 2003-04-18 | Mitsubishi Chemicals Corp | ラクトン構造を有する多環式化合物 |
JP4003061B2 (ja) | 2001-08-31 | 2007-11-07 | 信越化学工業株式会社 | 高分子化合物、レジスト材料、及びパターン形成方法 |
JP3975790B2 (ja) | 2002-03-15 | 2007-09-12 | Jsr株式会社 | 感放射線性樹脂組成物 |
JP4031327B2 (ja) | 2002-09-05 | 2008-01-09 | 富士フイルム株式会社 | レジスト組成物 |
KR101243405B1 (ko) * | 2004-01-15 | 2013-03-13 | 제이에스알 가부시끼가이샤 | 액침용 상층막 형성 조성물 및 포토레지스트 패턴 형성 방법 |
CN101031597B (zh) * | 2004-09-30 | 2010-04-14 | Jsr株式会社 | 共聚物及形成上层膜用组合物 |
JP5114021B2 (ja) * | 2006-01-23 | 2013-01-09 | 富士フイルム株式会社 | パターン形成方法 |
CN102109760B (zh) * | 2006-03-31 | 2015-04-15 | Jsr株式会社 | 抗蚀剂图案形成方法 |
JP4905772B2 (ja) * | 2006-06-06 | 2012-03-28 | 富士フイルム株式会社 | 樹脂、該樹脂を含有するポジ型レジスト組成物、該樹脂を含有する保護膜形成組成物、該ポジ型レジスト組成物を用いたパターン形成方法及び該保護膜形成組成物を用いたターン形成方法 |
JP5266688B2 (ja) * | 2006-08-18 | 2013-08-21 | 住友化学株式会社 | 化学増幅型レジスト組成物の酸発生剤用の塩 |
TWI412888B (zh) * | 2006-08-18 | 2013-10-21 | Sumitomo Chemical Co | 適合作為酸產生劑之鹽及含有該鹽之化學放大型正光阻組成物 |
KR101400824B1 (ko) * | 2006-09-25 | 2014-05-29 | 후지필름 가부시키가이샤 | 레지스트 조성물, 이 레지스트 조성물에 사용되는 수지, 이수지의 합성에 사용되는 화합물, 및 상기 레지스트조성물을 사용한 패턴형성방법 |
JP4818882B2 (ja) * | 2006-10-31 | 2011-11-16 | 東京応化工業株式会社 | ポジ型レジスト組成物およびレジストパターン形成方法 |
US10678132B2 (en) * | 2007-03-14 | 2020-06-09 | Fujifilm Corporation | Resin for hydrophobilizing resist surface, method for production thereof, and positive resist composition containing the resin |
EP1975705B1 (fr) * | 2007-03-28 | 2016-04-27 | FUJIFILM Corporation | Composition de réserve positive et procédé de formation de motifs |
US7635554B2 (en) * | 2007-03-28 | 2009-12-22 | Fujifilm Corporation | Positive resist composition and pattern forming method |
US7700261B2 (en) * | 2007-09-26 | 2010-04-20 | Fujifilm Corporation | Positive photosensitive composition and a pattern-forming method using the same |
-
2009
- 2009-09-10 WO PCT/JP2009/065875 patent/WO2010029982A1/fr active Application Filing
- 2009-09-10 CN CN2009801357013A patent/CN102150083B/zh active Active
- 2009-09-10 JP JP2010528755A patent/JP5360065B2/ja active Active
- 2009-09-10 KR KR1020117005739A patent/KR101701523B1/ko active IP Right Grant
- 2009-09-10 EP EP09813128.7A patent/EP2325694B1/fr active Active
- 2009-09-11 TW TW098130755A patent/TWI524135B/zh active
-
2011
- 2011-03-11 US US13/045,962 patent/US20110212401A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
---|
No further relevant documents disclosed * |
Also Published As
Publication number | Publication date |
---|---|
TWI524135B (zh) | 2016-03-01 |
EP2325694A1 (fr) | 2011-05-25 |
KR101701523B1 (ko) | 2017-02-01 |
US20110212401A1 (en) | 2011-09-01 |
TW201022839A (en) | 2010-06-16 |
JP5360065B2 (ja) | 2013-12-04 |
CN102150083A (zh) | 2011-08-10 |
EP2325694B1 (fr) | 2017-11-08 |
KR20110057154A (ko) | 2011-05-31 |
JPWO2010029982A1 (ja) | 2012-02-02 |
WO2010029982A1 (fr) | 2010-03-18 |
CN102150083B (zh) | 2013-09-04 |
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