EP2125616A2 - Method for growing a carbon nanotube on a nanometric tip - Google Patents
Method for growing a carbon nanotube on a nanometric tipInfo
- Publication number
- EP2125616A2 EP2125616A2 EP08762031A EP08762031A EP2125616A2 EP 2125616 A2 EP2125616 A2 EP 2125616A2 EP 08762031 A EP08762031 A EP 08762031A EP 08762031 A EP08762031 A EP 08762031A EP 2125616 A2 EP2125616 A2 EP 2125616A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- tip
- silicon
- cobalt
- nanotube
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
- C01B32/158—Carbon nanotubes
- C01B32/16—Preparation
- C01B32/162—Preparation characterised by catalysts
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y35/00—Methods or apparatus for measurement or analysis of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q60/00—Particular types of SPM [Scanning Probe Microscopy] or microscopes; Essential components thereof
- G01Q60/24—AFM [Atomic Force Microscopy] or apparatus therefor, e.g. AFM probes
- G01Q60/38—Probes, their manufacture, or their related instrumentation, e.g. holders
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01Q—SCANNING-PROBE TECHNIQUES OR APPARATUS; APPLICATIONS OF SCANNING-PROBE TECHNIQUES, e.g. SCANNING PROBE MICROSCOPY [SPM]
- G01Q70/00—General aspects of SPM probes, their manufacture or their related instrumentation, insofar as they are not specially adapted to a single SPM technique covered by group G01Q60/00
- G01Q70/08—Probe characteristics
- G01Q70/10—Shape or taper
- G01Q70/12—Nanotube tips
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/02—Single-walled nanotubes
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/04—Nanotubes with a specific amount of walls
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B2202/00—Structure or properties of carbon nanotubes
- C01B2202/20—Nanotubes characterized by their properties
- C01B2202/34—Length
Definitions
- the present invention relates to a method for growing carbon nanotubes on nano-sized tips, and more specifically the location, orientation and anchoring with good mechanical strength of an isolated carbon nanotube, mono- wall or multi-wall, with a number of walls ⁇ 4, or a small beam of 2 to 3 carbon nanotubes, on a nano-sized tip, with an improved success rate.
- Carbon nanotubes are cylindrical molecules whose structure can be represented as a graphite sheet wound on itself. In this case we speak of a single wall carbon nanotube. When the structure of the carbon nanotube can be represented by several coiled and concentric sheets of graphite, it is called multiwall nanotubes.
- carbon nanotubes are of particular interest in the field of Near Field Microscopy (MCP).
- MCP Near Field Microscopy
- points comprising a carbon nanotube has been demonstrated (see, for example, Dai et al., Nature, 384, (1996), 147 ff.) And such points carrying nanotubes could become an unavoidable element. as a probe for atomic force microscopy (AFM).
- AFM atomic force microscopy
- the existing products for use as probe in atomic force microscopy are in particular silicon tips
- the lateral resolution is commonly 10 to 20 nm, that is to say, the order of magnitude of the size of the apex; the best have an ultimate resolution close 5 nm, but are very fragile at the apex as soon as they undergo the slightest contact when approaching the surface to be studied.
- obtaining high quality images of the steep sides present on certain electronic circuits, in order to establish the quality of said circuits is relatively difficult, especially with pyramidal shaped tips; moreover, for certain applications, the silicon of the tip can pollute or react chemically with the analyzed surface.
- these methods by bonding generally relate to multi-wall nanotubes (number of walls of the order of 10 or more), which certainly have the advantage of being very robust, but whose diameter from minus 10 nm results in poor resolution quality, including poor lateral resolution quality.
- the patent application WO-A1-2004 / 094690 discloses a method for growing carbon nanotubes on a substrate previously coated with a titanium cobalt bilayer, the titanium layer being between 0.degree. , 5 nm and 5 nm and the cobalt layer being between 0.25 nm and 10 nm. According to this method, the nanotubes grow from the lateral surface of the bilayer without being able to favor growth of an isolated nanotube at the apex of a silicon tip.
- a first object of the present invention is to provide a method of growing a carbon nanotube, or a small beam of carbon nanotubes, single wall or having a number of walls ⁇ 4, to the apex of a tip of nanometric size, said method comprising simple steps and relatively easy to transpose to the industrial level.
- Another object of the invention is to optimize the growth of carbon nanotubes at the apex of spikes, including nanoscale spikes, for example probes tips usable in atomic force microscopy.
- Another objective is to optimize and promote the growth of substantially isolated carbon nanotubes and only at the apex of spikes, including nanoscale spikes.
- the invention proposes the optimization of the growth of carbon nanotubes isolated essentially only at the tip apex, substantially in the direction of the axis of the tip. Another objective is to provide a large-scale manufacturing process batches of tips, the ends (apex) comprise an isolated carbon nanotube, or a small isolated beam of carbon nanotubes. Another object of the invention is a batch growth process of carbon nanotubes isolated at the apex of nanometric spikes, including tips supported by cantilever (s). Another objective is the batch production of probes for AFM cantilever type, the apex of the tips is grafted with at least one carbon nanotube at one, two, three or even a maximum of four walls preferably from one to three walls. Still other objectives will be expressed in the description of the invention which follows.
- the present invention thus has for its first object a catalytic growth process of a carbon nanotube isolated at the apex of a nanometer tip by chemical vapor deposition (CVD), for example chemical vapor deposition assisted of a hot filament (HFCVD), comprising a step consisting of covering all or part of said tip of a titanium-cobalt bilayer beforehand, the titanium layer having a thickness of between 0.1 nm and 0.2 nm and the cobalt layer having a thickness between 0.3 nm and 2 nm.
- nanoscale tip is meant any type of nanoscale point, such as those used in the various fields using nanometric techniques and devices, for example electronics, optoelectronics, near field microscopy, atomic force microscopy, and others. Nanoscale tips are well known to those skilled in the art and can be made of any type of material, in particular semiconductor materials.
- the nanoscale tips advantageously consist essentially of one or more semiconductor materials chosen from semiconductors, semiconductors III- V, semiconductor nitrides, semiconductor carbides, more particularly among semiconductors and semiconductor nitrides, alone or in combinations or combinations of two or more of them.
- semiconductor materials chosen from semiconductors, semiconductors III- V, semiconductor nitrides, semiconductor carbides, more particularly among semiconductors and semiconductor nitrides, alone or in combinations or combinations of two or more of them.
- Preferred examples of such materials are Si, SiC, SJsN 4 , AlN, Ga, Ge, GaN, InN, GaAs, GaAsAl, AlGaN, alone or in combinations or combinations of two or more of them.
- Particularly preferred are tips made of silicon (Si) or silicon nitride (SisN 4 ) or a combination or combination of these two materials in any proportions. Most preferably, the tips are made of silicon.
- silicon used as such or in the terms “silicon tip”, “silicon wafer” and the like, encompasses not only silicon as such , but also any other semiconductor material as defined above, in particular silicon nitride, alone or in combination / combination with silicon, which can be used in a manner equivalent to silicon in the fields envisaged.
- the present invention also encompasses the improved growth processes of carbon nanotubes as defined above, on silicon nitride tips, alone or in combination / combination with silicon.
- the inventors have surprisingly discovered that the deposition of the bilayer defined above allows the localization and anchoring, with good mechanical strength, of an isolated carbon nanotube, or a small isolated beam of 2 to 3 nanotubes, single wall or with a number of walls ⁇ 4, usually 2 or 3 walls, at the apex of a nanometer tip.
- the cobalt layer is preferably formed on the titanium layer.
- the titanium layer is formed on the cobalt layer.
- the invention thus resides in the implementation of the CVD method, preferably HFCVD, associated with a titanium / cobalt bilayer previously deposited on a nanoscale tip which makes it possible to increase the probability of locating a carbon nanotube, or a small bundle of carbon nanotubes, by compared to the same process using a single layer of nanotube growth catalyst.
- the tip may be covered in whole or in part by the previously defined bilayer. When only part of the tip is covered with the bilayer, it is preferred that the coating is present at least in the vicinity of the end of the tip (apex), or on the end of the tip. Techniques for partial coating of a catalyst layer are known to those skilled in the art and can be applied to the bilayer of the process of the present invention.
- the present invention allows a control of the length of the nanotubes, by varying the thickness of the cobalt layer, without substantially altering the probability of locating a nanotube at the apex of a nanotube. point.
- the nanotubes grafted according to the process of the invention may, for example, have a length of between a few tens of nm and a few ⁇ m, advantageously less than or equal to 1 ⁇ m.
- the length is between 20 nm and 3 to 4 microns, more preferably between 100 to 500 nm and 1 micron.
- the method of the present invention makes it possible to obtain grafted carbon nanotubes with a precisely controlled length of between 200 nm and 300 nm.
- other precisely controlled lengths can be obtained.
- the nanotubes also have the advantage of being grafted substantially at the apex of the tip and in an orientation, along the axis of the tip, equal to ⁇ 20 °. These properties make it possible in particular to obtain excellent imaging qualities by atomic force microscopy. These excellent imaging qualities result in particular from the robustness of the assembly due to the method of the invention, the lack of chemical reaction with the surface to be studied, thanks to the inert constituent of the nanotube which is carbon.
- graft nanotubes a nanotube or even a small bundle of nanotubes
- orientation ⁇ 20 ° with respect to the axis of the point
- imageries with excellent lateral resolutions of steep flanks imageries with excellent surface resolutions having roughnesses / asperities (hollow and bumps) ), or breaks (current passages).
- These resolutions may be less than or equal to 5 nm with reduced analysis times compared to conventional high resolution probes, for example analysis times reduced by a factor of up to about 10, without altering the resolution.
- the method of the invention is a self-assembly technique that allows, by simple deposition of at least the previously defined bilayer, optimize and localize the growth by technique (HF) CVD of a nanotube at the apex of a nanoscale tip, preferably a tip of silicon and / or silicon nitride.
- This method is thus particularly suitable for the batch production of carbon nanotubes grafted onto nanometric points distributed over a surface, without requiring any post-treatment.
- the method of the invention makes it possible to increase the probability of grafting carbon nanotubes with a length of between 20 nm and 3 to 4 ⁇ m, compared to the known methods of the prior art. .
- the growth success rate of a carbon nanotube isolated at the apex of the tip generally varies between 20% and 60%, depending on the operating conditions, and the nature, quality, size and shape of the tips.
- the previously coated spikes of the previously defined titanium / cobalt bilayer are grafted with an isolated carbon nanotube (or a small isolated nanotube bundle, as defined previously) with an improved success rate, ranging from 40% to 80%, generally from 50% to 80%, for a minimum number of at least 100 tips processed in batches of at least 30 tips. It has even been observed a success rate of 100% on lots of 10 silicon tips.
- the success rate is defined as the ratio between the number of points grafted by an isolated nanotube or a small isolated beam of nanotubes, as previously defined, and the total number of tips engaged in the process of the invention, expressed percentage.
- the method of the present invention makes it possible, simply and without a post-treatment step, to improve the efficiency of the processes known from the prior art by a factor of about 2. , or even greater than 2, and therefore significantly lower the manufacturing cost of grafted tips and therefore their cost.
- the method of the invention comprising the step of applying the bilayer described above, avoids the generation of a large number of nanotubes on the surface of the tip, while promoting growth. at least one isolated nanotube at the apex of the tip. Indeed, the method of the invention implements a lower cobalt thickness than that commonly used in the field.
- This lower thickness of cobalt causes a sharp decrease in the density of tubes deposited on the substrate (tip, cantilever, probe, sheet (“wafer”) and others) and thus allows said substrate to retain its appearance, including color and brightness, and therefore its reflective power in the visible. This allows at least to preserve the initial properties of the substrate.
- the present invention makes it possible to decouple the anchoring probability of a carbon nanotube (or a small bundle of carbon nanotubes) essentially governed by titanium, from the length of the nanotube (s) which depends essentially on the thickness of the cobalt layer.
- the carbon nanotubes obtained at the apex of spikes according to the process of the present invention are substantially even completely uniform within the same batch and between different batches.
- the present inventors have succeeded in optimizing the titanium / cobalt ratio, in order to optimize the low growth density / small diameter / length compromise of the nanotubes at the apex of nanometric peaks, leading to an increased probability of location and a strong anchor of a carbon nanotube (or a small bundle of carbon nanotubes) at the tip (apex) of spikes.
- the diameter and the structure (single wall, multi-wall) nanotubes are substantially uniform.
- the diameter of the nanotubes grafted according to the process of the present invention is generally of the order of 1 to 8 nm, preferably of the order of 1 to 5 nm, typically of the order of 1 to 3 nm for single-walled nanotubes, and of the order of 2 nm to 5 nm for nanotubes with two concentric walls.
- the first step of the method of the invention thus relates to the deposition of a bilayer comprising titanium and cobalt, as defined above, on any type of substrate, in particular a semiconductor substrate, for example silicon and / or silicon nitride, such as for example a "wafer" (silicon wafer), a probe or a cantilever, comprising at least one tip at the apex of which the growth of a nanotube (or a small beam of carbon nanotubes) according to the process of the invention is desired.
- a semiconductor substrate for example silicon and / or silicon nitride, such as for example a "wafer" (silicon wafer), a probe or a cantilever, comprising at least one tip at the apex of which the growth of a nanotube (or a small beam of carbon nanotubes) according to the process of the invention is desired.
- the deposition of the thin layers can be carried out by any method known to those skilled in the art and, for example, by evaporation, spraying or any other thin-film deposition method usually used with the substrates that can be used in the context of the invention.
- present invention the thicknesses of titanium and cobalt are measured using a quartz whose natural frequency varies in a known manner when it is covered with a thin layer and therefore its mass. increases. This quartz is positioned closer to the deposition surface. This Thickness measurement is controlled once and for all by measurement of the step height on a standard substrate where the material has been deposited.
- the growth of the nanotubes is carried out by implementing a catalytic process by chemical vapor deposition, preferably assisted by a hot filament (HFCVD process), known to those skilled in the art. and as described, for example, by L. Marty et al. Microelectronics Engineering, 61-62 (1), (2002), 4585-489).
- This growth step is generally carried out in the presence of a gaseous hydrocarbon atmosphere, such as methane, ethylene or acetylene, preferably methane, and optionally, but preferably, hydrogen and at a temperature in the region of 800 ° C.
- a gaseous hydrocarbon atmosphere such as methane, ethylene or acetylene, preferably methane, and optionally, but preferably, hydrogen and at a temperature in the region of 800 ° C.
- carbon nanotubes can be formed by reaction between a carbonaceous vapor and catalytic particles, typically cobalt, iron or nickel, which have the property of dissolving the carbon located on their surface.
- the catalytic particles are formed in situ by dewetting a thin layer of cobalt previously deposited on a substrate under the effect of a temperature rise. brutal.
- the vapor is decomposed by a filament heated to 1900-2050 0 C and placed opposite the surface of the substrate.
- Carbonaceous vapor a source of carbon and atomic hydrogen, has the property of gasifying disordered carbon forms.
- the catalytic reaction of the cobalt particles with the carbonaceous vapor on a substrate coated with the bilayer previously defined and brought to a temperature of the order of 700-900 ° C. makes it possible to obtain single-walled or multi-walled nanotubes with low numbers. of walls ( ⁇ 4) and of good crystalline quality.
- the method of the present invention is a catalytic growth process of an isolated carbon nanotube or a small isolated beam of carbon nanotubes, at the apex of a nanoscale tip, for example silicon and / or or silicon nitride, by chemical vapor deposition (CVD), ⁇ 1-
- a hot filament chemical vapor deposition comprising: a) depositing on all or a portion of said tip of a titanium-cobalt bilayer, the titanium layer having a thickness of between 0.1 nm and 0.2 nm and the cobalt layer having a thickness between 0.3 nm and 2 nm; b) the implementation of a catalytic process by chemical vapor deposition, preferably assisted by a hot filament (HFCVD process), of growth of said nanotube or said small nanotube bundle; and c) obtaining the tip, at the apex of which is grafted an isolated carbon nanotube or a small isolated beam of carbon nanotubes, single-wall or multi-wall low number of walls ( ⁇ 4).
- HFCVD hot filament chemical vapor deposition
- the substrate coated, in whole or in part, titanium / cobalt bilayer according to the invention comprises at least one tip.
- This tip can be of all shapes and sizes suitable for the applications envisaged, and in particular of various geometrical shapes, with a square, rectangular, triangular, circular, and other base, that is to say tips of conical or pyramidal shape. these points may possibly be truncated.
- a substrate such as a wafer, a probe, a cantilever, or a tip, coated with a titanium / cobalt bilayer, the titanium layer having a thickness of between 0.1 nm and 0.2 nm and the cobalt layer having a thickness between 0.3 nm and 2 nm is new and is within the scope of the present invention.
- Said substrate comprises, or consists essentially of, one or more semiconductor materials, as previously defined, and preferably the substrate is comprised of, or consists of, silicon, silicon nitride or an association / combination of silicon / silicon nitride.
- said substrate comprises at least one tip, and that said substrate can be coated in whole or in part with said bilayer, for as far as said tip is coated with said bilayer, at least on its tapered portion, at the apex, or at least in the vicinity of the apex of said tip.
- the present invention relates to the method of growth of carbon nanotubes at the tip apex, said method being performed in batches (batch).
- batch means that a large number of tips, usually disposed on a substrate, can be processed simultaneously.
- the invention therefore solves the problem of anchoring a nanotube (or a small beam of carbon nanotubes) isolated at the apex of a tip, for any nanodevice, that is to say to say any substrate having at least one point, this with a technique of batch self-assembly, in other words to simultaneously grow at the apex of the tips of several nanodevices, an isolated carbon nanotube, or a small beam isolated from carbon nanotubes.
- the nanodevices can therefore be processed simultaneously, in batches, said nanodevices generally being distributed over surfaces of all sizes, for example surfaces of 2 inches (5.08 cm) in diameter, 4 inches (10.16 cm). ) diameter, or even surfaces 6 inches (15.24 cm) in diameter.
- Commercial substrates for example silicon wafers
- having the above dimensions can for example comprise up to 120 devices, up to 480 devices, or even up to 1080 devices, all of which can be processed simultaneously according to the method of the invention. invention, ie coating the bilayer and growing nanotubes.
- the success rate that is to say the percentage of tips at the apex of which is grafted an isolated carbon nanotube, or a small isolated beam of carbon nanotubes as described above, can range from 40% to 80%, or even 100%.
- This success rate (presence or absence of a nanotube or a small bundle of nanotubes at the apex of a tip) is evaluated by observation of the tips using a scanning electron microscope, field emission type.
- the present invention is directed to an optimized growth process for carbon nanotubes at the apex of tips.
- the applications of these points grafted according to the method of the present invention by at least one nanotube or a bundle of 2 to 3 carbon nanotubes are numerous, as is known in the art and as can be imagined by those skilled in the art, according to technological developments.
- the points grafted by an isolated carbon nanotube, or an isolated beam of 2 to 3 carbon nanotubes, obtained according to the process of the invention may advantageously be used in the field of near field microscopy technology and atomic force microscopy.
- points grafted according to the method of the invention may be those that use devices requiring the localization, anchoring and orientation of a carbon nanotube in a point with a free end, or at two points, without free end, in nanodevices made of silicon or silicon nitride, such as NEMS ("Nano Electro Mechanical Systems”), transistors, sensors, and others, or at the manufacture of NEMS, electrical circuits or sensors based on carbon nanotubes.
- NEMS Nano Electro Mechanical Systems
- said tip when the carbon nanotube is anchored to the apex of a tip, and the other end of the nanotube is free, said tip can be used in a high performance probe for Atomic Force Microscopy, especially for the imaging of proteins or other biological materials.
- said nanotube When the nanotube is suspended between two points, one of which is the apex of a tip, the other being a surface, another tip, an electrode, or the like, said nanotube may then be an element of any type of nanodevices, such as transistors, NEMS, or others.
- the method of the present invention makes it possible to obtain an improved success rate not only for grafting an isolated nanotube or a small isolated beam of nanotubes at the end of a tip, but also , an improved success rate for the grafting of an isolated nanotube or a small an isolated beam of nanotubes at the end of a tip, together with the growth and anchoring of said isolated nanotube or a small isolated beam of nanotubes on another tip, a surface, an electrode or the like of a nanodevice, such as a transistor, NEMS or other.
- a nanodevice such as a transistor, NEMS or other.
- the degree of grafting an isolated nanotube (or a small isolated nanotube beam) at the apex of the tips is about 18%.
- the peaks of pyramidal shape (total number: 600) being this time coated with a titanium layer of 0.1-0.2 nm and then with a cobalt layer of 0,
- the grafting rate of an isolated nanotube (or a small isolated nanotube beam) at the apex of the tips is about 50%, an increase of about 245%.
- the degree of grafting increases from 60% with a single layer of cobalt with an optimized thickness of 4 nm, to reach 80% with a titanium layer of 0. , 1 nm coated with a cobalt layer 1 nm thick.
- the method of the present invention thus makes it possible not only to significantly increase the probability of grafting an isolated nanotube (or a small isolated beam of nanotubes) at the apex of the tips, but also to reduce strongly the amount of cobalt required for the growth of the nanotubes, with the advantage of keeping the cantilever at least its initial reflection power.
- FIG. 1 shows a tip of pyramidal shape, the end of which is grafted, according to the process of the present invention, by an isolated carbon nanotube of length approximately 430 nm.
- FIGS. 2 and 3 respectively show a tip grafted by a carbon nanotube isolated on a tapered tip of conical shape and on a tapered tip of pyramidal shape.
Abstract
Description
Claims
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0700925A FR2912426B1 (en) | 2007-02-09 | 2007-02-09 | METHOD FOR GROWING A CARBON NANOTUBE ON A NANOMETRIC POINT |
PCT/FR2008/050171 WO2008104672A2 (en) | 2007-02-09 | 2008-02-01 | Method for growing a carbon nanotube on a nanometric tip |
Publications (1)
Publication Number | Publication Date |
---|---|
EP2125616A2 true EP2125616A2 (en) | 2009-12-02 |
Family
ID=38473396
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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EP08762031A Withdrawn EP2125616A2 (en) | 2007-02-09 | 2008-02-01 | Method for growing a carbon nanotube on a nanometric tip |
Country Status (5)
Country | Link |
---|---|
US (1) | US20100154087A1 (en) |
EP (1) | EP2125616A2 (en) |
JP (1) | JP5607371B2 (en) |
FR (1) | FR2912426B1 (en) |
WO (1) | WO2008104672A2 (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170184631A1 (en) * | 2015-12-14 | 2017-06-29 | Applied Nanostructures, Inc. | Probe device for scanning probe microscopes and method of manufacture thereof |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4523713B2 (en) * | 2000-11-14 | 2010-08-11 | 新日本無線株式会社 | Method for producing carbon nanotube |
US20030143327A1 (en) * | 2001-12-05 | 2003-07-31 | Rudiger Schlaf | Method for producing a carbon nanotube |
JP2004182537A (en) * | 2002-12-04 | 2004-07-02 | Mie Tlo Co Ltd | Method of forming arranged structure of nanocarbon material |
FR2853912B1 (en) * | 2003-04-17 | 2005-07-15 | Centre Nat Rech Scient | PROCESS FOR GROWING CARBON NANOTUBES |
JP4521482B2 (en) * | 2004-04-26 | 2010-08-11 | オリンパス株式会社 | SPM cantilever and manufacturing method thereof |
-
2007
- 2007-02-09 FR FR0700925A patent/FR2912426B1/en not_active Expired - Fee Related
-
2008
- 2008-02-01 JP JP2009548721A patent/JP5607371B2/en not_active Expired - Fee Related
- 2008-02-01 EP EP08762031A patent/EP2125616A2/en not_active Withdrawn
- 2008-02-01 WO PCT/FR2008/050171 patent/WO2008104672A2/en active Application Filing
- 2008-02-01 US US12/526,450 patent/US20100154087A1/en not_active Abandoned
Non-Patent Citations (1)
Title |
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None * |
Also Published As
Publication number | Publication date |
---|---|
FR2912426A1 (en) | 2008-08-15 |
JP5607371B2 (en) | 2014-10-15 |
JP2010517914A (en) | 2010-05-27 |
WO2008104672A3 (en) | 2008-11-13 |
FR2912426B1 (en) | 2009-05-29 |
WO2008104672A2 (en) | 2008-09-04 |
US20100154087A1 (en) | 2010-06-17 |
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