EP1898466A2 - Encased PCB switch assembly with contact device - Google Patents
Encased PCB switch assembly with contact device Download PDFInfo
- Publication number
- EP1898466A2 EP1898466A2 EP07011533A EP07011533A EP1898466A2 EP 1898466 A2 EP1898466 A2 EP 1898466A2 EP 07011533 A EP07011533 A EP 07011533A EP 07011533 A EP07011533 A EP 07011533A EP 1898466 A2 EP1898466 A2 EP 1898466A2
- Authority
- EP
- European Patent Office
- Prior art keywords
- conductive layer
- circuit arrangement
- contact
- semi
- connection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims abstract description 77
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 239000002131 composite material Substances 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 14
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 claims description 2
- 230000001070 adhesive effect Effects 0.000 claims description 2
- 230000002441 reversible effect Effects 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000011889 copper foil Substances 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 229920006255 plastic film Polymers 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
- H05K3/361—Assembling flexible printed circuits with other printed circuits
- H05K3/365—Assembling flexible printed circuits with other printed circuits by abutting, i.e. without alloying process
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/041—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction having no base used as a mounting for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/59—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures
- H01R12/61—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures connecting to flexible printed circuits, flat or ribbon cables or like structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
- H01R12/50—Fixed connections
- H01R12/59—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures
- H01R12/63—Fixed connections for flexible printed circuits, flat or ribbon cables or like structures connecting to another shape cable
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/30—Clamped connections, spring connections utilising a screw or nut clamping member
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/48—Clamped connections, spring connections utilising a spring, clip, or other resilient member
- H01R4/4809—Clamped connections, spring connections utilising a spring, clip, or other resilient member using a leaf spring to bias the conductor toward the busbar
- H01R4/48185—Clamped connections, spring connections utilising a spring, clip, or other resilient member using a leaf spring to bias the conductor toward the busbar adapted for axial insertion of a wire end
- H01R4/4819—Clamped connections, spring connections utilising a spring, clip, or other resilient member using a leaf spring to bias the conductor toward the busbar adapted for axial insertion of a wire end the spring shape allowing insertion of the conductor end when the spring is unbiased
- H01R4/4821—Single-blade spring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
- H01R4/00—Electrically-conductive connections between two or more conductive members in direct contact, i.e. touching one another; Means for effecting or maintaining such contact; Electrically-conductive connections having two or more spaced connecting locations for conductors and using contact members penetrating insulation
- H01R4/28—Clamped connections, spring connections
- H01R4/48—Clamped connections, spring connections utilising a spring, clip, or other resilient member
- H01R4/4809—Clamped connections, spring connections utilising a spring, clip, or other resilient member using a leaf spring to bias the conductor toward the busbar
- H01R4/4846—Busbar details
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0618—Disposition being disposed on at least two different sides of the body, e.g. dual array
- H01L2224/06181—On opposite sides of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32153—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/32175—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic
- H01L2224/32188—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being metallic the layer connector connecting to a bonding area protruding from the surface of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0302—Properties and characteristics in general
- H05K2201/0311—Metallic part with specific elastic properties, e.g. bent piece of metal as electrical contact
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/0999—Circuit printed on or in housing, e.g. housing as PCB; Circuit printed on the case of a component; PCB affixed to housing
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/36—Assembling printed circuits with other printed circuits
Definitions
- the invention describes a hopped semiconductor circuit arrangement, for example a power semiconductor module, with contact devices for the electrical connection of the semiconductor components to external supply lines.
- connection will be understood in the following to mean a connection between an inner connection element of the power semiconductor module with an external supply line, wherein the connection device is connected to the control contact devices of a power semiconductor component.
- connection device is connected to the control contact devices of a power semiconductor component.
- all other external connections should be subsumed under this term by way of example of integrated circuits, which are not external load connections. Even if the semiconductor circuit arrangement according to the invention is represented by means of an embodiment as a power semiconductor module, this does not limit the generality.
- a starting point of the invention are power semiconductor modules, as exemplified by the DE 10 2004 0255 609 A1 , or the DE 103 55 925 A1 are known.
- the first document discloses a power semiconductor module in screw pressure contact.
- the external load connections of the power semiconductor module with an external printed circuit board are in this case achieved by means of a screw connection according to the prior art.
- the external control connections are in this case designed as a connection between one. Spring contact element and a conductor track portion of the external circuit board.
- a pressure introduction to the control terminals by the arrangement and screwing of the printed circuit board with the load connection elements takes place for electrical contacting.
- the design of a power semiconductor module in the aforementioned type is particularly suitable for current loads of the load terminals of more than 10 amps.
- the semiconductor circuit arrangement has at least one connection device for connecting the semiconductor components.
- This consists of a film composite with at least two electrically conductive layers, for example made of copper or aluminum, each with an insulating layer arranged therebetween, wherein at least one conductive layer is structured in itself and thus forms printed conductors.
- the first conductive layer (60) has an external contact device (600), designed here as a solder connection, to the printed circuit board (7).
- This first conductive layer (60) is structured in itself and thus forms conductor tracks.
- the film composite (6) furthermore has circuit-compatible plated-through holes of printed conductors of this first conductive layer (60) to form the second conductive layer (64) or conductor tracks formed there.
- FIG. 3 shows a third embodiment of a semiconductor semiconductor circuit arrangement (1) according to the invention in section, whereby this differs from that according to FIG. 2 in that here the first conductive layer (60) is connected to an external supply line (8).
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Coupling Device And Connection With Printed Circuit (AREA)
- Electric Clocks (AREA)
Abstract
Description
Die Erfindung beschreibt eine gehauste Halbleiterschaltungsanordnung, beispielhaft ein Leistungshalbleitermodul, mit Kontakteinrichtungen zur elektrischen Verbindung der Halbleiterbauelemente mit externen Zuleitungen.The invention describes a hopped semiconductor circuit arrangement, for example a power semiconductor module, with contact devices for the electrical connection of the semiconductor components to external supply lines.
Hierbei soll im Folgenden mit dem Begriff des externen Lastanschlusses eine Verbindung zwischen einem inneren Verbindungselement des Leistungshalbleitermoduls mit einer externen Zuleitung verstanden werden, wobei die Verbindungseinrichtung mit den Leistungskontakteinrichtungen eines Leistungshalbleiterbauelements verbunden ist.Hereinafter, the term external load connection is to be understood as meaning a connection between an inner connection element of the power semiconductor module with an external supply line, wherein the connection device is connected to the power contact devices of a power semiconductor component.
Analog wird mit dem Begriff externer Steueranschluss im Folgenden eine Verbindung zwischen einem inneren Verbindungselement des Leistungshalbleitermoduls mit einer externen Zuleitung verstanden werden, wobei die Verbindungseinrichtung mit den Steuerkontakteinrichtungen eines Leistungshalbleiterbauelements verbunden ist. Ebenso sollten unter diesen Begriff auch alle weiteren externen Anschlüsse beispielhaft von integrierten Schaltungen, subsumiert werden, die keine externen Lastanschlüsse sind. Auch wenn die erfindungsgemäße Halbleiterschaltungsanordnung an Hand einer Ausführung als Leistungshalbleitermodul dargestellt wird bedeutet dies keine Beschränkung der Allgemeinheit.Analogously, the term external control connection will be understood in the following to mean a connection between an inner connection element of the power semiconductor module with an external supply line, wherein the connection device is connected to the control contact devices of a power semiconductor component. Likewise, all other external connections should be subsumed under this term by way of example of integrated circuits, which are not external load connections. Even if the semiconductor circuit arrangement according to the invention is represented by means of an embodiment as a power semiconductor module, this does not limit the generality.
Einen Ausgangspunkt der Erfindung bilden Leistungshalbleitermodule, wie sie beispielhaft aus der
Die
Die nicht vorveröffentlichte
Die jeweiligen leitenden Schichten sind in sich strukturiert und bilden somit dort Leiterbahnen aus. Die erste leitende Schicht des Folienverbunds weist erste, als Punktschweißverbindungen ausgebildete interne Lastanschlüsse zu Leistungsanschlussflächen von Leistungshalbleiterbauelementen auf. Ebenso weist diese erste leitende Schicht auf einer weiteren Leiterbahn interne Steueranschlüsse zu Steueranschlussflächen von Leistungshalbleiterbauelementen auf. Weiterhin weist die erste leitende Schicht externe Lastanschlüsse zur Lastverbindung mit einer Leiterplatte auf. Die zweite leitende Schicht weist gleichartige externe Steueranschlüsse zur Steuerverbindung mit der Leiterplatte auf, wobei diese Anschlüsse jeweils als Lötverbindungen ausgebildet sind.The respective conductive layers are structured in themselves and thus form there conductor tracks. The first conductive layer of the film composite has first, as spot welding connections formed internal load connections to power pads of power semiconductor devices. Likewise, this first conductive layer has internal control connections to control connection surfaces of power semiconductor components on a further conductor track. Furthermore, the first conductive layer has external load terminals for load connection to a printed circuit board on. The second conductive layer has similar external control terminals for control connection with the printed circuit board, wherein these terminals are each formed as solder joints.
Der Folienverbund selbst weist Folienabschnitte zwischen den internen, sowie den externen Anschlüssen auf, die in Führungsabschnitten des Gehäuses angeordnet sind, wobei die externen Anschlüsse parallele Flächennormalen aufweisen.The film composite itself has film sections between the internal and the external terminals, which are arranged in guide portions of the housing, wherein the external terminals have parallel surface normals.
Der Erfindung liegt die Aufgabe zugrunde eine gehauste Halbleiterschaltungsanordnung mit einer Verbindungseinrichtung in Ausgestaltung eines Folienverbunds und mit externen Kontakteinrichtungen zur reversiblen Verbindung mit externen Zuleitungen vorzustellen.The invention has for its object to present a hopped semiconductor circuit arrangement with a connection device in an embodiment of a film composite and with external contact devices for reversible connection to external leads.
Die Aufgabe wird erfindungsgemäß gelöst, durch die Maßnahmen der Merkmale des Anspruchs 1. Bevorzugte Ausführungsformen sind in den Unteransprüchen beschrieben.The object is achieved by the measures of the features of claim 1. Preferred embodiments are described in the subclaims.
Der erfinderische Gedanke geht aus von einer gehausten Halbleiterschaltungsanordnung mit mindestens einem Substrat. Dieses Substrat weist eine Mehrzahl von Leiterbahnen auf, worauf Halbleiterbauelemente schaltungsgerecht angeordnet sind. Diese Halbleiterbauelemente sind beispielhaft als integrierte Schaltungen oder als Einzelbauelemente wie Dioden oder Transistoren ausgebildet. Es kann bevorzugt sein wenn mindestens eines der Halbleiterbauelemente ein Leistungshalbleiterbauelement, wie beispielhaft ein Leistungstransistor oder eine Leistungsdiode ist. Weiterhin können auf den Leiterbahnen des Substrats passive elektronische Bauelemente wie Widerstände und / oder Kondensatoren schaltungsgerecht angeordnet sein.The inventive idea is based on a gehausten semiconductor circuit arrangement with at least one substrate. This substrate has a plurality of conductor tracks, whereupon semiconductor components are arranged in a circuit-oriented manner. These semiconductor devices are exemplified as integrated circuits or as individual components such as diodes or transistors. It may be preferred if at least one of the semiconductor components is a power semiconductor component, such as, for example, a power transistor or a power diode. Furthermore, passive electronic components such as resistors and / or capacitors can be arranged in a circuit-compatible manner on the conductor tracks of the substrate.
Die Halbleiterschaltungsanordnung weist zur Verbindung der Halbleiterbauelemente mindestens eine Verbindungseinrichtung auf. Diese besteht aus einem Folienverbund mit mindestens zwei elektrisch leitenden Schichten, beispielhaft aus Kupfer oder Aluminium, mit jeweils einer dazwischen angeordneten isolierenden Schicht, wobei mindestens eine leitende Schicht in sich strukturiert ist und somit Leiterbahnen ausbildet.The semiconductor circuit arrangement has at least one connection device for connecting the semiconductor components. This consists of a film composite with at least two electrically conductive layers, for example made of copper or aluminum, each with an insulating layer arranged therebetween, wherein at least one conductive layer is structured in itself and thus forms printed conductors.
Mindestens eine dieser leitenden Schichten weist erste interne Kontakteinrichtungen zu Anschlussflächen zugeordneter Halbleiterbauelemente auf. Erfindungsgemäß weist diese und / oder eine weitere leitende Schicht einen Teilabschnitt auf, der Teil mindestens einer zweiten reversibel ausgebildeten Kontakteinrichtung zur Verbindung mit externen Zuleitungen ist. Diese externe Kontakteinrichtung weist mindestens ein Federelement mit einem Widerlager im Gehäuse und / oder mindestens eine Feststellschraube auf. Die Variante mit dem Federelement bildet somit eine selbst arretierende Kontakteinrichtung aus, bei der eine externe Zuleitung eine Steckverbindung mit der Kontakteinrichtung eingeht. Die Variante mit Feststellschraube ist als Schräub-Klemmverbindung nach dem Stand der Technik ausgebildet.
Die erfinderische Lösung wird an Hand der Ausführungsbeispiele der Fig. 1 bis 4 weiter erläutert.At least one of these conductive layers has first internal contact devices to pads of associated semiconductor devices. According to the invention, these and / or a further conductive layer has a partial section which is part of at least one second reversibly formed contact device for connection to external supply lines. This external contact device has at least one spring element with an abutment in the housing and / or at least one locking screw. The variant with the spring element thus forms a self-locking contact device, in which an external supply line receives a plug connection with the contact device. The variant with locking screw is designed as a pre-clamp connection according to the prior art.
The inventive solution will be explained with reference to the embodiments of FIGS. 1 to 4 on.
Fig. 1 zeigt eine erste Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung im Schnitt.1 shows a first embodiment of a semiconductor semiconductor circuit arrangement according to the invention in section.
Fig. 2 zeigt eine zweite Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung im Schnitt.FIG. 2 shows a second embodiment of a semiconductor semiconductor circuit arrangement according to the invention in section.
Fig. 3 zeigt eine dritte Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung im Schnitt.Fig. 3 shows a third embodiment of a gehausten semiconductor circuit arrangement according to the invention in section.
Fig. 4 zeigt eine vierte Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung im Schnitt.4 shows a fourth embodiment of a semiconductor semiconductor circuit arrangement according to the invention in section.
Fig. 1 zeigt eine erste Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung (1) im Schnitt in einer Anordnung mit einem Kühlkörper (2) und einer Leiterplatte (7). Die Halbleiterschaltungsanordnung (1) ist hier als Leistungshalbleitermodul ausgestaltet. Dieses besteht aus einem Gehäuse (3), welches ein Substrat (5) teilweise umschließt. An diesem elektrisch isolierend ausgebildeten Substrat (5) ist der Kühlkörper (2) angeordnet und thermisch leitend mit dem Substrat (5) verbunden.1 shows a first embodiment of a semiconductor semiconductor circuit arrangement (1) according to the invention in section in an arrangement with a heat sink (2) and a printed circuit board (7). The semiconductor circuit arrangement (1) is designed here as a power semiconductor module. This consists of a housing (3), which encloses a substrate (5) partially. At this electrically insulated substrate (5), the heat sink (2) is arranged and thermally conductively connected to the substrate (5).
Die dem Inneren des Leistungshalbleitermoduls (1) zugewandte Seite des Substrats (5) ist ausgebildet als eine Mehrzahl von voneinander elektrisch isolierten Leiterbahnen (54). Auf diesen Leiterbahnen ist eine Mehrzahl von Halbleiterbauelementen (58), beispielhaft Leistungsdioden und / oder Leistungstransistoren und / oder integrierte Schaltkreise angeordnet und schaltungsgerecht verbunden. Zwischen dem Grundkörper (52) des Substrats und dem Kühlkörper (2) ist eine thermisch leitende Schicht (56) angeordnet.The interior of the power semiconductor module (1) facing side of the substrate (5) is formed as a plurality of mutually electrically insulated conductor tracks (54). A multiplicity of semiconductor components (58), for example power diodes and / or power transistors and / or integrated circuits, are arranged on these interconnects and are connected in a circuit-compatible manner. Between the base body (52) of the substrate and the heat sink (2), a thermally conductive layer (56) is arranged.
Weiterhin weist das Leistungshalbleitermodul (1) eine Verbindungseinrichtung (6) auf, die aus einem Folienverbund besteht. Dieser Folienverbund wird hier gebildet aus einer ersten (60) und einer zweiten (64) leitenden jeweils in sich strukturierten und somit Leiterbahnen ausbildenden Schicht und einer dazwischen angeordneten isolierenden Schicht (62). Die erste leitende Schicht (60) ist hier als Aluminiumfolie, die zweite (64) als eine Kupferfolie und die isolierende (62) als Kunststofffolie ausgebildet. Die jeweiligen Schichten (60, 62; 64) weisen eine der jeweiligen Funktion angepasste Schichtdicke zwischen 10µm und 500µm auf.Furthermore, the power semiconductor module (1) has a connection device (6), which consists of a film composite. This film composite is formed here from a first (60) and a second (64) conductive layer which is in each case structured in itself and thus forms conductor tracks and an insulating layer (62) arranged therebetween. The first conductive layer (60) is here formed as aluminum foil, the second (64) as a copper foil and the insulating (62) as a plastic film. The respective layers (60, 62, 64) have a layer thickness adapted to the respective function between 10 μm and 500 μm.
Die erste leitende Schicht (60) weist eine externe Kontakteinrichtung (600), hier ausgebildet als eine Lötverbindung, zur Leiterplatte (7) auf. Diese erste leitende Schicht (60) ist in sich strukturiert und bildet somit Leiterbahnen aus. Der Folienverbund (6) weist weiterhin schaltungsgerechte Durchkontaktierungen von Leiterbahnen dieser ersten leitenden Schicht (60) zur zweiten leitenden Schicht (64) bzw. dort ausgebildeten Leiterbahnen auf.The first conductive layer (60) has an external contact device (600), designed here as a solder connection, to the printed circuit board (7). This first conductive layer (60) is structured in itself and thus forms conductor tracks. The film composite (6) furthermore has circuit-compatible plated-through holes of printed conductors of this first conductive layer (60) to form the second conductive layer (64) or conductor tracks formed there.
Diese zweite leitende Schicht (64) dieses Folienverbunds (6) weist erste, als Punktschweißverbindungen ausgebildete innere Kontakteinrichtungen (640) zu Anschlussflächen (580) von Halbleiterbauelementen (58) auf. Alternativ sind hier Klebe-, Löt- oder auch Druckkontaktverbindungen möglich. Die Halbleiterbauelemente (58) sind hier als Leistungshalbleiterbauelemente, je ein Leistungstransistor und eine Leistungsdiode ausgebildet. Grundsätzlich ist hier allerdings die Anordnung beliebiger aktiver, beispielhaft in Ausgestaltung integrierter Schaltkreise, und / oder passiver elektronischer Bauelemente, beispielhaft in Ausgestaltung von Widerständen, möglich.This second conductive layer (64) of this film composite (6) has first inner contact devices (640) designed as spot-welded connections to connection surfaces (580) of semiconductor components (58). Alternatively, adhesive, solder or pressure contact connections are possible here. The semiconductor components (58) are designed here as power semiconductor components, depending on a power transistor and a power diode. Basically, however, the arrangement of any active, exemplary in design integrated circuits, and / or passive electronic components, for example in embodiment of resistors possible.
Erfindungsgemäß bildet ein Teil der zweiten leitenden Schicht (64) einen Teil einer zweiten externen Kontakteinrichtung (4), hier ein Lastanschluss, zur Verbindung mit einer externen Zuleitung (8). Hierzu ist ein Abschnitt (644) der zweiten leitenden Schicht (64) im Bereich der zweiten Kontakteinrichtung (4) in einer Führung (32) im Gehäuse (3) derart angeordnet, dass sie um mehr als 180 Grad gebogen ist und eine Kontaktfläche (642) zur externen Zuleitung (8) ausbildet.According to the invention, part of the second conductive layer (64) forms part of a second external contact device (4), here a load connection, for connection to an external supply line (8). For this purpose, a portion (644) of the second conductive layer (64) in the region of the second contact device (4) in a guide (32) in the housing (3) is arranged such that it is bent by more than 180 degrees and a contact surface (642 ) to the external supply line (8) is formed.
Die zweite Kontakteinrichtung (4) ist hierbei selbst arretierend ausgebildet. Hierzu weist diese zweite Kontakteinrichtung (4) ein Federelement (40) mit einem Widerlager (30) im Gehäuse (3) auf. Dieses Federelement (40) drückt mit seiner Kontaktfläche (402) derart auf die externe Zuleitung (8), dass diese Zuleitung zwischen der leitenden Schicht (64) und dem Federelement (40) geklemmt ist und somit die elektrisch leitende Verbindung zur zweiten leitenden Schicht (64) hergestellt ist.The second contact device (4) is in this case self-locking. For this purpose, this second contact device (4) has a spring element (40) with an abutment (30) in the housing (3). This spring element (40) presses with its contact surface (402) on the external lead (8) such that this lead is clamped between the conductive layer (64) and the spring element (40) and thus the electrically conductive connection to the second conductive layer ( 64).
Fig. 2 zeigt eine zweite Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung (1) im Schnitt. Hierbei entspricht der grundsätzliche Aufbau des Substrats (5) und des folienverbunds (6) demjenigen gemäß Fig. 1.FIG. 2 shows a second embodiment of a semiconductor semiconductor circuit arrangement (1) according to the invention in section. Here, the basic structure of the substrate (5) and of the film composite (6) corresponds to that of FIG. 1.
Die zweite Kontakteinrichtung (4) verbindet hier wiederum als externer Lastanschluss die zweite leitende Schicht (64) des Folienverbunds (6) mit einer externen Zuleitung (8). Bei dieser Ausgestaltung weist die zweite leitende Schicht (64) keine Biegung auf, sie ist ausschließlich in einem Teilabschnitt in einer Ausnehmung (32) des Gehäuses (3) geführt.Here again, the second contact device (4), as an external load connection, connects the second conductive layer (64) of the film composite (6) to an external supply line (8). In this embodiment, the second conductive layer (64) no bending, it is guided exclusively in a section in a recess (32) of the housing (3).
Der elektrische Kontakt zwischen der externen Zuleitung (8) und der zweiten leitenden Schicht (64) ist mittels eines Federelements (40) ausgebildet. Hierzu weist das Federelement (40) ein Widerlager (30) im Gehäuse (3) des Leistungshalbleitermoduls (1) auf. Durch Einstecken der externen Zuleitung (8) wird diese mit einer ersten Kontaktfläche (402) des Federelements (40) elektrisch leitend verbunden, gleichzeitig wird eine zweite Kontaktfläche (646) des geeignet geformten Federelements (40) auf die zweite leitende Schicht (64) gedrückt und bildet somit den elektrischen Kontakt aus.The electrical contact between the external lead (8) and the second conductive layer (64) is formed by means of a spring element (40). For this purpose, the spring element (40) has an abutment (30) in the housing (3) of the power semiconductor module (1). By inserting the external supply line (8), this is electrically conductively connected to a first contact surface (402) of the spring element (40), at the same time a second contact surface (646) of the suitably shaped spring element (40) is pressed onto the second conductive layer (64) and thus forms the electrical contact.
Die externe Zuleitung (8) kann hier beispielhaft als ein einzelnes Kabel oder als Kontakteinrichtung einer Leiterplatte ausgebildet sein.The external supply line (8) can be configured here by way of example as a single cable or as a contact device of a printed circuit board.
Fig. 3 zeigt eine dritte Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung (1) im Schnitt, wobei sich diese von derjenigen gemäß Fig. 2 dahingehend unterscheidet, dass hier die erste leitende Schicht (60) mit einer externen Zuleitung (8) verbunden ist.FIG. 3 shows a third embodiment of a semiconductor semiconductor circuit arrangement (1) according to the invention in section, whereby this differs from that according to FIG. 2 in that here the first conductive layer (60) is connected to an external supply line (8).
Da es vorteilhaft sein kann die erste leitende Schicht (60) dünner im Vergleich zur zweiten (64) auszubilden ist es hier bevorzugt die isolierende Schicht (62) auch im Bereich der zweiten Kontakteinrichtung (4) nicht von der ersten leitenden Schicht (60) zu entfernen.Since it may be advantageous to form the first conductive layer (60) thinner in comparison to the second (64), it is preferable that the insulating layer (62) is not in the region of the second contact device (4) from the first conductive layer (60) remove.
Die zweite Kontakteinrichtung (4) weist ebenso wie gemäß Fig. 2 eine erste Kontaktfläche (402) zur externen Zuleitung (8) sowie eine zweite Kontaktfläche (606) zur zugeordneten, hier der ersten, leitenden Schicht (60) auf. Da diese erste leitende Schicht (60) besonders geeignet ist für Steuer- und Hilfsanschlüsse ist es hier bevorzugt eine Mehrzahl gleichartiger zweiter Kontakteinrichtungen (4) nebeneinander anzuordnen und somit eine Mehrzahl eng benachbarter externer Verbindungen vorzusehen.As in the case of FIG. 2, the second contact device (4) has a first contact surface (402) for the external supply line (8) and a second contact surface (606) for the associated, here the first, conductive layer (60). Since this first conductive layer (60) is particularly suitable for control and auxiliary connections, it is preferred here to arrange a plurality of similar second contact devices (4) next to one another and thus to provide a plurality of closely adjacent external connections.
Die externe Zuleitung (8) kann hier beispielhaft als ein einzelnes Kabel oder als eine Ader eines Flachbandkabels ausgebildet sein.The external supply line (8) can be designed here by way of example as a single cable or as a core of a ribbon cable.
Fig.4 zeigt eine vierte Ausgestaltung einer erfindungsgemäßen gehausten Halbleiterschaltungsanordnung (1) im Schnitt. Hierbei entspricht der grundsätzliche Aufbau des Substrats und des Folienverbunds (6) demjenigen gemäß Fig. 2.4 shows a fourth embodiment of a semiconductor semiconductor circuit arrangement (1) according to the invention in section. Here, the basic structure of the substrate and of the film composite (6) corresponds to that of FIG. 2.
Die zweite Kontakteinrichtung (4) verbindet hier wiederum als Lastanschluss die zweite leitende Schicht (64) des Folienverbunds (6) mit einer externen Zuleitung.(8). Bei dieser Ausgestaltung weist die zweite leitende Schicht (64) ebenfalls keine Biegung auf, sie ist ausschließlich in einem Teilabschnitt in einer Ausnehmung (32) des Gehäuses (3) geführt.The second contact device (4) in turn connects the second conductive layer (64) of the film composite (6) with an external supply line (8) as a load connection. In this embodiment, the second conductive layer (64) also has no bending, it is guided exclusively in a section in a recess (32) of the housing (3).
Der elektrische Kontakt zwischen der externen Zuleitung (8) und der zweiten leitenden Schicht (64) ist mittels einer Schraub- Klemmverbindung mit einer Feststellschraube (80) ausgebildet. Hierzu weist der rahmenartige Teil des Gehäuses (3) eine Aufnahme (34) mit einem Gewinde auf. Die zweite leitende Schicht (64) weist ein mit dem Gewinde fluchtende Ausnehmung (648) auf. Zwischen der leitenden Schicht (64) und der externen Zuleitung (8), die hier als flächiges Metallformteil und einer passend angeordneter Ausnehmung (82) ausgebildet ist, ist mindestens ein weiteres Metallformteil (92) mit einer Ausnehmung angeordnet um Drehmomente der Schraubverbindung aufzunehmen und die daraus resultierende Belastung auf die erste leitende Schicht (64) möglichst gering zu halten. Der Deckel des Leistungshalbleitermoduls (1) weist ebenso eine fluchtende Ausnehmung (36) zur Aufnahme der Feststellschraube (80) auf.The electrical contact between the external lead (8) and the second conductive layer (64) is formed by means of a screw-clamp connection with a locking screw (80). For this purpose, the frame-like part of the housing (3) has a receptacle (34) with a thread. The second conductive layer (64) has a threaded recess (648). Between the conductive layer (64) and the external supply line (8), which is formed here as a flat metal molded part and a suitably arranged recess (82), at least one further metal molded part (92) is arranged with a recess to receive torques of the screw and the resulting stress on the first conductive layer (64) to minimize. The cover of the power semiconductor module (1) also has an aligned recess (36) for receiving the locking screw (80).
Claims (8)
aus einem Folienverbund aus mindestens zwei elektrisch leitenden Schichten (60, 64) mit jeweils einer dazwischen angeordneten isolierenden Schicht (62), wobei mindestens eine leitende Schicht (60, 64) in sich strukturiert ist und somit Leiterbahnen ausbildet ,
wobei mindestens eine leitende Schicht (60, 64) erste Kontakteinrichtungen (640) zu Anschlussflächen (580) der Halbleiterbauelemente (58) aufweist und wobei mindestens ein Teil dieser und / oder einer weiteren leitenden Schicht (60, 64) ein Teil mindestens einer zweiten Kontakteinrichtung (4) zur reversiblen Verbindung mit einer externen Zuleitungen (8) ist,
wobei die zweite Kontakteinrichtung (4) mindestens ein Federelement (40) mit einem Widerlager (32) im Gehäuse (3) und / oder mindestens eine Feststellschraube (80) aufweist.Semi-conductor semiconductor circuit arrangement (1) having at least one substrate (5) with interconnects (54) and semiconductor components (58) arranged thereon in a circuitally appropriate manner and having a connection device (6),
from a film composite of at least two electrically conductive layers (60, 64), each with an insulating layer (62) arranged therebetween, wherein at least one conductive layer (60, 64) is structured in itself and thus forms printed conductors,
wherein at least one conductive layer (60, 64) comprises first contact means (640) to pads (580) of the semiconductor devices (58) and wherein at least a portion of this and / or another conductive layer (60, 64) is part of at least one second contact means (4) is for reversible connection to an external supply lines (8),
wherein the second contact device (4) has at least one spring element (40) with an abutment (32) in the housing (3) and / or at least one locking screw (80).
wobei mindestens ein Halbleiterbauelement (58) ein Leistungshalbleiterbauelement, wie ein Leistungstransistor oder eine Leistungsdiode ist.Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein at least one semiconductor device (58) is a power semiconductor device, such as a power transistor or a power diode.
wobei mindestens ein Halbleiterbauelement (58) ein integrierter Schaltkreis ist:Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein at least one semiconductor device (58) is an integrated circuit:
die Schichtdicken der leitenden und isolierenden Schichten (60, 62, 64) zwischen 10µm und 500µm beträgt.Semi-conductor semiconductor circuit arrangement according to Claim 1,
the layer thicknesses of the conductive and insulating layers (60, 62, 64) is between 10 μm and 500 μm.
wobei das Federelement (40) der zweiten Kontakteinrichtung (4) eine erste Kontaktfläche (402) zur externen Zuleitung sowie eine zweite Kontaktfläche (606, 646) zur zugeordneten leitenden Schicht (60, 64) aufweist.Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein the spring element (40) of the second contact device (4) has a first contact surface (402) for external supply and a second contact surface (606, 646) to the associated conductive layer (60, 64).
wobei das Federelement (40) der zweiten Kontakteinrichtung (4) eine erste Kontaktfläche (402) und die zugeordnete leitende Schicht (60, 64) eine Kontaktfläche (642) zur externen Zuleitung (8) aufweisen.Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein the spring element (40) of the second contact device (4) has a first contact surface (402) and the associated conductive layer (60, 64) has a contact surface (642) to the external supply line (8).
wobei ein Abschnitt der leitenden Schicht (60, 64) im Bereich der zweiten Kontakteinrichtung (4) eine Führung (32) im Gehäuse (3) aufweist.Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein a portion of the conductive layer (60, 64) in the region of the second contact device (4) has a guide (32) in the housing (3).
wobei die erste Kontakteinrichtung (580) als Lötverbindung oder als Klebeverbindung oder als Druckkontaktierung oder als Punktschweißverbindung ausgebildet ist.Semi-conductor semiconductor circuit arrangement according to Claim 1,
wherein the first contact device (580) is designed as a solder connection or as an adhesive connection or as a pressure contact or as a spot-welded connection.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102006027482A DE102006027482B3 (en) | 2006-06-14 | 2006-06-14 | Housed semiconductor circuit arrangement e.g. power semiconductor module, has two conductive layers with contact device to joint surface of semiconductor component, where part of conductive layers is part of another contact device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1898466A2 true EP1898466A2 (en) | 2008-03-12 |
EP1898466A3 EP1898466A3 (en) | 2008-05-07 |
EP1898466B1 EP1898466B1 (en) | 2017-08-23 |
Family
ID=38266224
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07011533.2A Active EP1898466B1 (en) | 2006-06-14 | 2007-06-13 | Encased PCB switch assembly with contact device |
Country Status (2)
Country | Link |
---|---|
EP (1) | EP1898466B1 (en) |
DE (1) | DE102006027482B3 (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100132467A (en) * | 2009-06-09 | 2010-12-17 | 세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지 | Method for producing a power semiconductor module, and power semiconductor module comprising a connection device |
CN101924043A (en) * | 2009-06-09 | 2010-12-22 | 赛米控电子股份有限公司 | Be used to make the method and the converter system of converter system with cooling device |
CN102110679A (en) * | 2009-10-21 | 2011-06-29 | 赛米控电子股份有限公司 | Power semiconductor module with a substrate having a three dimensional surface contour and method for producing same |
CN108336051A (en) * | 2017-01-10 | 2018-07-27 | 赛米控电子股份有限公司 | Power semiconductor modular with power semiconductor structure element |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008034468B4 (en) * | 2008-07-24 | 2013-03-14 | Semikron Elektronik Gmbh & Co. Kg | The power semiconductor module |
DE102008034467B4 (en) * | 2008-07-24 | 2014-04-03 | Semikron Elektronik Gmbh & Co. Kg | Arrangement with a power semiconductor module and with a connection device |
DE102009017733B4 (en) | 2009-04-11 | 2011-12-08 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module with a connection device and formed as a contact spring internal connection elements |
DE102009024369B4 (en) * | 2009-06-09 | 2011-12-29 | Semikron Elektronik Gmbh & Co. Kg | Power electronic system |
EP2343780A1 (en) | 2010-01-12 | 2011-07-13 | SEMIKRON Elektronik GmbH & Co. KG | Semiconductor circuit assembly |
DE102010063387A1 (en) | 2010-12-17 | 2012-06-21 | Semikron Elektronik Gmbh & Co. Kg | Circuit arrangement with at least two submodules |
DE102011075921B8 (en) * | 2011-05-16 | 2014-08-07 | Infineon Technologies Ag | By means of clamping wedge and counter wedge electrically connectable power semiconductor module and power semiconductor module system with such a power semiconductor module |
DE102012202765B3 (en) * | 2012-02-23 | 2013-04-18 | Semikron Elektronik Gmbh & Co. Kg | Semiconductor module |
DE102013104950B3 (en) * | 2013-05-14 | 2014-04-30 | Semikron Elektronik Gmbh & Co. Kg | Power semiconductor module and arrangement hereby |
CN107851639B (en) | 2015-10-28 | 2020-08-25 | 三菱电机株式会社 | Power semiconductor device |
WO2023213346A1 (en) | 2022-05-06 | 2023-11-09 | Fachhochschule Kiel | Power semiconductor module having a plug-in connection |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB578576A (en) | 1944-11-03 | 1946-07-03 | Ericsson Telephones Ltd | Improvements in or relating to electrical multi-contact plugs |
DE3915611C1 (en) | 1989-05-12 | 1990-06-13 | Stocko Metallwarenfabriken Henkels Und Sohn Gmbh & Co, 5600 Wuppertal, De | Electrical plug and socket connector - has contact units with contact springs engaging socket suits |
DE10355925A1 (en) | 2003-11-29 | 2005-06-30 | Semikron Elektronik Gmbh | Power semiconductor module and method of its manufacture |
DE102006013078A1 (en) | 2006-03-22 | 2007-10-04 | Semikron Elektronik Gmbh & Co. Kg | Compact power semiconductor module with connection device |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4939570A (en) * | 1988-07-25 | 1990-07-03 | International Business Machines, Corp. | High power, pluggable tape automated bonding package |
US5002494A (en) * | 1989-05-09 | 1991-03-26 | Amp Incorporated | Printed circuit board edge connector |
US5923538A (en) * | 1994-10-17 | 1999-07-13 | Lsi Logic Corporation | Support member for mounting a microelectronic circuit package |
US6234820B1 (en) * | 1997-07-21 | 2001-05-22 | Rambus Inc. | Method and apparatus for joining printed circuit boards |
US6486548B1 (en) * | 1997-10-20 | 2002-11-26 | Hitachi, Ltd. | Semiconductor module and power converting apparatus using the module |
DE102004025609B4 (en) * | 2004-05-25 | 2010-12-09 | Semikron Elektronik Gmbh & Co. Kg | Arrangement in screw-type pressure contact with a power semiconductor module |
-
2006
- 2006-06-14 DE DE102006027482A patent/DE102006027482B3/en active Active
-
2007
- 2007-06-13 EP EP07011533.2A patent/EP1898466B1/en active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB578576A (en) | 1944-11-03 | 1946-07-03 | Ericsson Telephones Ltd | Improvements in or relating to electrical multi-contact plugs |
DE3915611C1 (en) | 1989-05-12 | 1990-06-13 | Stocko Metallwarenfabriken Henkels Und Sohn Gmbh & Co, 5600 Wuppertal, De | Electrical plug and socket connector - has contact units with contact springs engaging socket suits |
DE10355925A1 (en) | 2003-11-29 | 2005-06-30 | Semikron Elektronik Gmbh | Power semiconductor module and method of its manufacture |
DE102006013078A1 (en) | 2006-03-22 | 2007-10-04 | Semikron Elektronik Gmbh & Co. Kg | Compact power semiconductor module with connection device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20100132467A (en) * | 2009-06-09 | 2010-12-17 | 세미크론 엘렉트로니크 지엠비에치 앤드 코. 케이지 | Method for producing a power semiconductor module, and power semiconductor module comprising a connection device |
CN101924043A (en) * | 2009-06-09 | 2010-12-22 | 赛米控电子股份有限公司 | Be used to make the method and the converter system of converter system with cooling device |
CN101924044A (en) * | 2009-06-09 | 2010-12-22 | 赛米控电子股份有限公司 | Make the method and the high-power semiconductor module of high-power semiconductor module |
CN101924044B (en) * | 2009-06-09 | 2014-07-30 | 赛米控电子股份有限公司 | Method for producing a high power semiconductor module and high power semiconductor module with a connection device |
CN101924043B (en) * | 2009-06-09 | 2014-11-12 | 赛米控电子股份有限公司 | Method for producing a current converter system with cooling device and a current converter system |
EP2264761A3 (en) * | 2009-06-09 | 2016-07-13 | SEMIKRON Elektronik GmbH & Co. KG | Method for producing a high power semiconductor module and high power semiconductor module with a connection device |
CN102110679A (en) * | 2009-10-21 | 2011-06-29 | 赛米控电子股份有限公司 | Power semiconductor module with a substrate having a three dimensional surface contour and method for producing same |
CN108336051A (en) * | 2017-01-10 | 2018-07-27 | 赛米控电子股份有限公司 | Power semiconductor modular with power semiconductor structure element |
CN108336051B (en) * | 2017-01-10 | 2023-05-30 | 赛米控电子股份有限公司 | Power semiconductor module with power semiconductor structural element |
Also Published As
Publication number | Publication date |
---|---|
DE102006027482B3 (en) | 2007-08-16 |
EP1898466A3 (en) | 2008-05-07 |
EP1898466B1 (en) | 2017-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1898466B1 (en) | Encased PCB switch assembly with contact device | |
EP1255299B1 (en) | Power semiconductor device with pressure contact | |
DE10306643B4 (en) | Arrangement in pressure contact with a power semiconductor module | |
EP1830404B1 (en) | Power semiconductor module | |
EP2107604B1 (en) | Power semiconductor module with hermetically sealed switching assembly and corresponding production method | |
DE102005047567B3 (en) | Power semiconductor module comprises a housing, connecting elements and an electrically insulated substrate arranged within the housing and semiconductor components with a connecting element and an insulating molded body | |
DE102009046403B4 (en) | Power semiconductor module in pressure contact technology | |
EP1841299A2 (en) | Connecting device for electronic components | |
DE102015210099B4 (en) | Electronic component and method of manufacturing such an electronic component | |
DE102006013078B4 (en) | Compact power semiconductor module with connection device | |
DE112016005794T5 (en) | Circuit and electrical connection box | |
EP2284889A1 (en) | High performance semiconductor module with switch holder and load connection element and corresponding production method | |
DE102014218240A1 (en) | Power component integrated in a printed circuit board | |
DE102011080153A1 (en) | Power semiconductor module for use at outer wall of motor, has component or contact surface exhibiting direct connection with one substrate and arranged between respective substrates and metallization layer that is attached on substrates | |
WO2009021786A1 (en) | Electric circuit configuration and method for producing an electric circuit configuration | |
DE10340297B4 (en) | Verbindugsanordnung for connecting active and passive electrical and electronic components | |
DE102009024385B4 (en) | Method for producing a power semiconductor module and power semiconductor module with a connection device | |
DE102013209296B4 (en) | Electronic module, in particular control unit for a vehicle | |
DE102007034847B4 (en) | Power semiconductor module with a plastic housing with connecting devices | |
DE202016101292U1 (en) | Power semiconductor device | |
EP2003693B1 (en) | Pressure contact three-phase converter module | |
DE102006058695B4 (en) | Power semiconductor module with butt soldered connection element | |
DE102012201889A1 (en) | Electrical power module has electronic components for electrically coupling contact elements, and punched grid that is arranged for coupling contact elements and one side of electronic component | |
WO2007080027A1 (en) | Arrangement for cooling power components on printed circuit boards and method for producing the same | |
EP1950807A1 (en) | Power semiconductor module with pressure body |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK YU |
|
PUAL | Search report despatched |
Free format text: ORIGINAL CODE: 0009013 |
|
AK | Designated contracting states |
Kind code of ref document: A3 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
AX | Request for extension of the european patent |
Extension state: AL BA HR MK RS |
|
17P | Request for examination filed |
Effective date: 20080423 |
|
17Q | First examination report despatched |
Effective date: 20080623 |
|
AKX | Designation fees paid |
Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
R17C | First examination report despatched (corrected) |
Effective date: 20081218 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R079 Ref document number: 502007015826 Country of ref document: DE Free format text: PREVIOUS MAIN CLASS: H01L0023480000 Ipc: H01L0023000000 |
|
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H05K 3/36 20060101ALI20170216BHEP Ipc: H01L 25/07 20060101ALI20170216BHEP Ipc: H05K 3/32 20060101ALI20170216BHEP Ipc: H01R 4/30 20060101ALI20170216BHEP Ipc: H01L 23/48 20060101ALI20170216BHEP Ipc: H01R 12/61 20110101ALI20170216BHEP Ipc: H05K 1/18 20060101ALI20170216BHEP Ipc: H01L 23/00 20060101AFI20170216BHEP Ipc: H01L 23/04 20060101ALI20170216BHEP Ipc: H01R 4/48 20060101ALI20170216BHEP Ipc: H01R 12/63 20110101ALI20170216BHEP |
|
INTG | Intention to grant announced |
Effective date: 20170314 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D Free format text: NOT ENGLISH |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 922187 Country of ref document: AT Kind code of ref document: T Effective date: 20170915 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D Free format text: LANGUAGE OF EP DOCUMENT: GERMAN |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 502007015826 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20170823 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG4D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20171123 Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20171223 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20171124 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 502007015826 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
REG | Reference to a national code |
Ref country code: FR Ref legal event code: PLFP Year of fee payment: 12 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
26N | No opposition filed |
Effective date: 20180524 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20180630 |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: MM4A |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180613 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180630 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180613 Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180630 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180630 |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MM01 Ref document number: 922187 Country of ref document: AT Kind code of ref document: T Effective date: 20180613 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: AT Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20180613 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: TR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20070613 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20170823 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20230621 Year of fee payment: 17 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20240502 Year of fee payment: 18 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20240507 Year of fee payment: 18 |