EP1774841A1 - Method for the production of a metal-ceramic substrate - Google Patents

Method for the production of a metal-ceramic substrate

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Publication number
EP1774841A1
EP1774841A1 EP05747522A EP05747522A EP1774841A1 EP 1774841 A1 EP1774841 A1 EP 1774841A1 EP 05747522 A EP05747522 A EP 05747522A EP 05747522 A EP05747522 A EP 05747522A EP 1774841 A1 EP1774841 A1 EP 1774841A1
Authority
EP
European Patent Office
Prior art keywords
metal
ceramic
aftertreatment
substrate
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP05747522A
Other languages
German (de)
French (fr)
Other versions
EP1774841B1 (en
Inventor
Jürgen SCHULZ-HARDER
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electrovac AG
Original Assignee
Electrovac AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electrovac AG filed Critical Electrovac AG
Publication of EP1774841A1 publication Critical patent/EP1774841A1/en
Application granted granted Critical
Publication of EP1774841B1 publication Critical patent/EP1774841B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/021—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles in a direct manner, e.g. direct copper bonding [DCB]
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2311/00—Metals, their alloys or their compounds
    • B32B2311/12—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/343—Alumina or aluminates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0335—Layered conductors or foils
    • H05K2201/0355—Metal foils
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/03—Conductive materials
    • H05K2201/0332—Structure of the conductor
    • H05K2201/0364—Conductor shape
    • H05K2201/0382—Continuously deformed conductors
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10227—Other objects, e.g. metallic pieces
    • H05K2201/10416—Metallic blocks or heatsinks completely inserted in a PCB
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0736—Methods for applying liquids, e.g. spraying
    • H05K2203/074—Features related to the fluid pressure
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4046—Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4084—Through-connections; Vertical interconnect access [VIA] connections by deforming at least one of the conductive layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
    • H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
    • H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49128—Assembling formed circuit to base
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base

Definitions

  • the invention relates to a method according to the preamble of claim 1.
  • Metal-ceramic substrates, and in particular copper-ceramic substrates are increasingly being used as base substrates or printed circuit boards in power modules intended for higher operating voltages, e.g. for operating voltages of 600 V and higher.
  • One of the requirements of such power modules is a sufficiently high partial discharge resistance. This requirement corresponds to the recognition that partial discharges that occur during the operation of such a module, lead over a long time in the insulating regions of the module to electrically conductive paths that weaken the insulation and ultimately can cause massive voltage breakdowns, so then it comes to a failure of the relevant module
  • the requirement for the highest possible partial discharge resistance refers to the entire module, d. H.
  • Each individual component of the module must meet the requirement of the highest possible partial discharge resistance. Since the respective metal-ceramic substrate constitutes an essential component of the respective module, this requirement also applies to this substrate, although partial discharges which occur solely within the metal-ceramic substrate do not cause any damage to the insulating effect there.
  • the requirement that each individual component has the required partial discharge resistance results i.a. from the fact that it is fundamentally impossible to determine with measurements on the finished module which individual component of the module is responsible for partial discharges at the module.
  • the measurement of partial discharge resistance is specified in the standard IEC 1278.
  • the respective test specimen is initially in a first measurement or test phase with an insulation voltage well above the operating voltage acted upon and then in a second, subsequent measuring or test phase, first with a reduced, preparatory measuring voltage and finally with the actual measuring or test voltage, in which then the partial discharge is measured.
  • the preparatory test voltage is above the maximum operating voltage of the relevant module and the actual test voltage below the maximum operating voltage of the module.
  • the partial discharge must not exceed a value of 10 pico Coulomb (pC) in this measurement.
  • (Fused layer) a eutectic having a melting temperature below the melting temperature of the metal (eg copper), so that by applying the film to the ceramic and by heating all layers, these can be connected together, by melting the metal or copper substantially only in the region of the melting layer or oxide layer.
  • the metal eg copper
  • the DCB process then has the following process steps, for example: oxidizing a copper foil in such a way that a uniform copper oxide layer results; - placing the copper foil on the ceramic layer;
  • a disadvantage of the DCB technique is that process-related defects between the respective metallization (copper) and the ceramic occur. Although these defects hardly affect the thermal properties of a metal-ceramic substrate produced using the DCB technique, since the bonding, i. the area ratio of the ceramic-to-metal bond not having the voids is generally greater than 90% relative to the total area of the transition between metal and ceramic. However, a certain problem arises due to the imperfections in terms of the partial discharge resistance.
  • the object of the invention is to provide a method by which, despite the use of the advantageous DCB process, defects are avoided, but at least reduced to the extent that an adverse effect on the properties of the metal-ceramic substrate and in particular on the partial discharge resistance is no longer detectable is.
  • a method according to claim 1 is formed.
  • a connection of the metallizations or the metal layers to the ceramic greater than 95% is achieved. It will be avoided in any case defects with a diameter greater than 50 microns. Surprisingly, the ceramic is not damaged by the aftertreatment.
  • a "metal-ceramic substrate” in the sense of the invention generally refers to a substrate or a layer sequence which comprises at least one ceramic layer and at least one at least one ceramic layer
  • bonding is understood to mean that area fraction of the transition between the respective metallization and the ceramic layer which does not have (area fraction) defects and thus has a direct connection of the metal layer to the ceramic.
  • the post-treatment is carried out in the invention using an inert gas as a compressed gas with an oxygen content or partial pressure of oxygen, which is adjusted taking into account the aftertreatment temperature so that the oxygen partial pressure is greater than that partial pressure at which a decomposition of the bond boundary between the copper and ceramic and thus a release of the respective DCB connection between the copper and the ceramic could occur.
  • the oxygen partial pressure is still so limited above that no appreciable oxidation of the copper occurs during the aftertreatment. Since the oxidation rate decreases with decreasing after-treatment temperature, the oxygen partial pressure can be selected correspondingly higher at low after-treatment temperatures.
  • Fig. 1 in a simplified representation of a metal-ceramic substrate according to the invention
  • 2 shows an enlarged view of the transition between the ceramic layer and a metallization in a metal-ceramic substrate before the aftertreatment.
  • Fig. 3 - 6 in each case different positions process steps different
  • FIG. 7 is a view similar to FIG. 1 of a further embodiment of the metal-ceramic substrate;
  • FIG. 8 shows, in various positions, method steps of different methods for producing the metal-ceramic substrate of FIG. 7;
  • FIG. 9 is a view similar to FIG. 1 of a further embodiment of the metal-ceramic substrate; FIG.
  • the substrate 1 shows in a simplified representation and in sections in copper-ceramic substrate 1 consisting of the ceramic layer 2 and the metal layers 3 and 4, each formed by films of copper or copper alloy and connected by means of the DCB process with the ceramic layer 2 are.
  • the substrate 1 is, for example, the base substrate or the circuit board of a power module for high operating voltages (greater than 600 volts).
  • At least one of the two metal layers 3 and 4 is in this case with a known technique, for example with the
  • FIG. 2 shows the transition between a metal layer 3 or 4 and the ceramic layer after the DCB process, namely with a defect 5.
  • the substrate 1 is heated in a further process step to a temperature below the process temperature of the DCB process, for example to a temperature in the range between 450 and 1060 ° C., and thereby at the same time using a non-reactive gas or inert gas, for example subjected to a gas pressure in the range between 400 and 2000 bar using argon or nitrogen.
  • a non-reactive gas or inert gas for example subjected to a gas pressure in the range between 400 and 2000 bar using argon or nitrogen.
  • HIP post-treatment in which the ceramic layer 2 is not damaged, voids or voids 5, which may form at the transition between the ceramic layer and the respective metal layer 3 or 4 by the DCB process and the partial discharge resistance reduce, completely or almost completely eliminated, so that the substrate 1, despite its design as a DCB substrate fully meets the requirements for the partial discharge resistance.
  • a blank 3.1 made of a pre-oxidized copper foil is placed on one side (position b) and the arrangement consisting of the ceramic layer 2 and the blank 3.1 is then heated in a suitable oven with exclusion of oxygen for about 10 minutes or presintered, in particular for the destruction of the hardness of the copper material. This is followed by heating of the ceramic layer 2 and the blank 3.1 at an oxygen content of ⁇ 20 ppm to about 1072 ° C, so that then after cooling the blank 3.1 connected to the one surface side of the ceramic layer by the DCB process Metal layer 3 forms (position c).
  • a blank 4.2 made of the pre-oxidized copper foil is also placed on the other surface side of this ceramic layer (position d) and the arrangement consisting of the ceramic layer 2, the metal layer 3 and the blank 4.1 re-oxygenated for about 10 minutes heated, again to a temperature well below the process temperature of about 1072 ° C of the DCB process.
  • the blank 4.1 is then bonded to the ceramic layer 2, namely by heating to the DCB process temperature at an oxygen content of ⁇ 20 ppm (position e).
  • the substrate After cooling below the DCB process temperature, the substrate then also has the metallization 4 connected to the ceramic layer 2.
  • the aftertreatment of the substrate 1 then takes place in a further process step by heating and pressurizing, in a closed pressure chamber 6 in a protective gas atmosphere, for example argon atmosphere with an oxygen partial pressure of about 6 ppm by heating to a temperature of about 560 ° C and at a pressure of about 1100 bar (position f).
  • a protective gas atmosphere for example argon atmosphere with an oxygen partial pressure of about 6 ppm by heating to a temperature of about 560 ° C and at a pressure of about 1100 bar (position f).
  • a protective gas atmosphere for example argon atmosphere with an oxygen partial pressure of about 6 ppm
  • the substrate 1 is cooled to room temperature and then followed by structuring of the metal layers 3 and 4 by masking and etching, so that on the ceramic layer 2, the metal structures of several individual substrates, ie on the common ceramic layer 2 in multiple use a plurality of individual substrates are formed (position g).
  • a suitable laser for example CO2 laser
  • the result of this process are substrates with high bonding of metallizations 3 and 4 to the ceramic, i. with a connection of at least 95% and with defects 5 whose diameter in the plane of the transition between the ceramic layer 2 and the metallization 3 or 4 is significantly smaller than 50 ⁇ m.
  • This method can also be modified, for example in the form that the method steps a - d are summarized, i.
  • the blanks 3.1 and 4.1 are arranged from the pre-oxidized copper foil and the assembly is heated or sintered in a suitable furnace under Sauerstoffausschi uss then followed by the two blanks 3.1 and 4.1 using the DCB process with the ceramic layer 2 are connected and that at an oxygen content ⁇ 20 ppm and a temperature of about 1072 ° C.
  • Starting material is an AIN ceramic layer 2 with the dimensions 130 x 180 mm and with a thickness of 2 mm (position a).
  • the ceramic layer 2 is provided with a thin layer 2.1 of Al 2 O 3, by oxidation or treatment over a period of 30 minutes at a Temperature of 1220 ° C in a nitrogen (N2) and oxygen (O2) containing atmosphere, wherein the ratio of nitrogen / oxygen is 80/20 (position a1).
  • the result of this method is again a substrate 1 with a connection of the metal layers 3 and 4 greater than 95% and without defects 5 with a diameter greater than 50m //.
  • Thickness of 0.63 mm used. Holes 7 are introduced into the ceramic layer 2 by suitable means, for example by drilling, of which only one is shown for the sake of simplicity (position a). Subsequently, the method steps b-e shown in Example 1 are followed by the application of the metal layers 3 and 4 to the ceramic layer 2.
  • This example relates to a method which differs from the method of Example 3 in that according to Figure 6 after the step d in each hole 6, which has a diameter of 0.8 mm, before placing the blank 4.1 each a blank 8 is used which has a diameter of 0.7 mm and an axial length of 0.3 mm.
  • the multi-substrate is again separated into the individual substrates.
  • FIG. 7 shows, as a further possible embodiment, a multilayer substrate 1 b which has two ceramic layers 2, an upper and a lower respectively exposed metal layer 3 or 4 and an inner metal layer 10 connecting the two ceramic layers 2 to one another. All the metal layers 3, 4 and 10 are in turn each formed by a pre-oxidized blank 3.1, 4.1 and 10.1 from a sheet of copper or a copper alloy and have a thickness of about 0.3 mm.
  • the preparation of the substrate 1 b for example, with a method according to the figure 8, the individual process steps are given in the following example.
  • Starting materials for the production of the substrate I b are two ceramic layers or substrates 2 having the dimensions 60 x 80 mm and a thickness of 0.38 mm and the three respectively pre-oxidized blanks 3.1, 4.1 and 10.1 from the sheet of copper or copper alloy (position a of Figure 8). These elements are stacked on top of each other, so that they rest tightly against each other and between the two ceramic layers 2 of the blank 10.1 is arranged and each ceramic layer 2 is also the blank 3.1 or 4.1 adjacent. Subsequently, the bonding or bonding by means of the DCB process, by heating the stack to the DCB process temperature of about 1072 ° C in a protective gas atmosphere having an oxygen content of less than 20 ppm. After completion of the DCB process and after cooling, the layer sequence corresponding to the metal-ceramic substrate 1b is already obtained (position b).
  • the aftertreatment is then carried out at a pressure of 750 bar and a temperature of 1030 ° C (position c).
  • the result is the substrate 1 in sandwich construction with a connection of the metal or copper layers 3, 4 and 10 to the surfaces of the ceramic layers 2 greater than 95% and with a defect diameter smaller than 50m ⁇ .
  • FIG. 9 shows a metal-ceramic substrate 1c, which differs from the substrate 1b in that between the metal layer 10 and the lower one
  • Ceramic layer 2 a further structured metal layer 11 is provided and protrudes with at least one portion 12 on one side of the substrate 1 c and thereby forms external terminals for the built-up with the metal-ceramic substrate 1 c module.
  • the preparation of the substrate 1 c is carried out, for example, in process steps which are described in Example 6 below.
  • the substrate 1 c is produced in accordance with FIG. 10 by first producing two individual substrates 1 c 1 and 1 c 2, namely a single substrate I cI consisting of a ceramic layer 2 and the upper metal layer 3 and the metal layer 10 as well as a further substrate 1c.2 consisting of the second ceramic layer 2 and the lower metal layer 4.
  • a single substrate I cI consisting of a ceramic layer 2 and the upper metal layer 3 and the metal layer 10
  • a further substrate 1c.2 consisting of the second ceramic layer 2 and the lower metal layer 4.
  • Single substrate is made in multiple use, i. each together with a plurality of similar individual substrates on a common ceramic plate or on a common ceramic substrate. 2
  • an AbOs substrate with the dimensions 130 ⁇ 180 mm and the thickness of 0.63 mm is used, into which holes 7 are introduced through the plated-through hole 8 of the metal-ceramic substrates 1c.
  • pre-oxidized blanks 3.1 and 10.1 made of copper sheet of dimensions 129 ⁇ 179 mm and a thickness of 0.3 mm are used.
  • each opening 7 After stacking the blanks 3.1 and 10.1 and the ceramic layer and introducing a Ronde 9 in each opening 7 is carried out by heating the process temperature of about 1072 ° C and in a Schutzgasatmoshpotrore with an oxygen content ⁇ 20 ppm joining the metal layers 3 and 10th with the ceramic layer 2 and the production of the plated-through holes 8 through the blanks 9.
  • the respective opening 7 has a diameter of about 0.9 mm and an axial length or height of 0.6 mm.
  • the structuring of the metal layers 3 and 10 takes place, for example, by masking and etching in the metallizations of the individual Sub-substrates 1 c.1 and then the laser scribing and severing of the multi-substrate into these individual sub-substrates.
  • a flat stamped part 11.1 forming the metal layer 11 is then placed on the exposed surface side of the ceramic layer 2 of the lower sub-substrate 1c.2 and on the upper side thereof Punching then the upper sub-substrate with the exposed side of the metal layer 10 is placed.
  • the stamped part 11.1 is in turn made of a copper foil and pre-oxidized.
  • the DCB temperature of 1072 ° C. and in a protective gas atmosphere with an oxygen content of less than 20 ppm are then used to connect the two sub-substrates 1c.1 and 1c.2 via the stamped part 11.1.
  • aftertreatment namely at a pressure of 750 bar and a temperature of 1030 ° C in a protective gas atmosphere with an oxygen content of about 10 ppm.
  • the metal-ceramic substrate 1 c in sandwich construction with at least one plated-through hole 8 for connecting the metal layer 3 or the interconnects formed by this metal layer, contact surfaces, etc. with outer terminals 12.
  • the connection of the metal or copper layers in all Levels is greater than 95%. Any existing defects have a diameter substantially smaller than 50 microns.

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Ceramic Products (AREA)
  • Laminated Bodies (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)

Abstract

Disclosed is a method for producing a metal-ceramic substrate. According to said method, a metal layer is applied to at least one face of a ceramic substrate or a ceramic layer by means of a direct bonding process, and the metal-ceramic substrate or partial substrate is aftertreated in a subsequent step at a gas pressure (aftertreatment pressure) ranging approximately between 400 and 2000 bar and an aftertreatment temperature ranging approximately.

Description

Verfahren zum Herstellen eines Metall-Keramik-Substrates Method for producing a metal-ceramic substrate
Die Erfindung bezieht sich auf ein Verfahren gemäß Oberbegriff Patentanspruch 1.The invention relates to a method according to the preamble of claim 1.
Metall-Keramik-Substrate, und dabei insbesondere Kupfer-Keramik-Substrate werden in zunehmendem Maße als Basissubstrate bzw. Leiterplatten auch in Leistungsmodulen eingesetzt, die für höhere Betriebsspannungen bestimmt sind, z.B. für Betriebsspannungen von 600 V und höher. Eine der Anforderungen an derartige Leistungsmodule ist eine ausreichend hohe Teilentladungsfestigkeit. Diese Forderung entspricht der Erkenntnis, dass Teilentladungen, die während des Betriebes eines solchen Moduls auftreten, über eine längere Zeit in den isolierenden Bereichen des Moduls zu elektrisch leitenden Pfaden führen, die die Isolation schwächen und letztendlich auch massive Spannungsdurchschläge verursachen können, so dass es dann zu einem Ausfall des betreffenden Moduls kommtMetal-ceramic substrates, and in particular copper-ceramic substrates are increasingly being used as base substrates or printed circuit boards in power modules intended for higher operating voltages, e.g. for operating voltages of 600 V and higher. One of the requirements of such power modules is a sufficiently high partial discharge resistance. This requirement corresponds to the recognition that partial discharges that occur during the operation of such a module, lead over a long time in the insulating regions of the module to electrically conductive paths that weaken the insulation and ultimately can cause massive voltage breakdowns, so then it comes to a failure of the relevant module
Die Forderung nach einer möglichst hohen Teilentladungsfestigkeit bezieht sich dabei auf das gesamte Modul, d. h. jede Einzelkomponente des Moduls muß die Anforderung einer möglichst hohen Teilentladungsfestigkeit erfüllen. Da das jeweilige Metall-Keramik-Substrat eine wesentliche Komponente des jeweiligen Moduls darstellt, gilt diese Anforderung auch für dieses Substrat, obwohl Teilentladungen, die allein innerhalb des Metall-Keramik-Substrates auftreten, dort keine Schädigung der Isolationswirkung verursachen. Die Forderung, dass jede Einzelkomponente die erforderliche Teilentladungsfestigkeit aufweist, resultiert u.a. daraus, dass sich bei Messungen an dem fertigen Modul grundsätzlich nicht feststellen läßt, welche Einzelkomponente des Moduls für Teilentladungen am Modul verantwortlich ist.The requirement for the highest possible partial discharge resistance refers to the entire module, d. H. Each individual component of the module must meet the requirement of the highest possible partial discharge resistance. Since the respective metal-ceramic substrate constitutes an essential component of the respective module, this requirement also applies to this substrate, although partial discharges which occur solely within the metal-ceramic substrate do not cause any damage to the insulating effect there. The requirement that each individual component has the required partial discharge resistance results i.a. from the fact that it is fundamentally impossible to determine with measurements on the finished module which individual component of the module is responsible for partial discharges at the module.
Die Messung der Teilentladungsfestigkeit ist in der Norm IEC 1278 festgelegt. Nach diesem Messprinzip wird der jeweilige Prüfling in einer ersten Mess- oder Prüfphase zunächst mit einer deutlich über der Betriebsspannung liegenden Isolationsspannung beaufschlagt und dann in einer zweiten, anschließenden Mess- oder Prüfphase zunächst mit einer reduzierten, vorbereitenden Mess-Spannung und schließlich mit der eigentlichen Meß- bzw. Prüfspannung, bei der dann die Teilentladung gemessen wird. Die vorbereitende Prüfspannung liegt dabei über der maximalen Betriebsspannung des betreffenden Moduls und die eigentliche Prüfspannung unterhalb der maximalen Betriebsspannung des Moduls. Die Teilentladung darf bei dieser Messung einen Wert von 10 pico Coulomb (pC) nicht übersteigen.The measurement of partial discharge resistance is specified in the standard IEC 1278. According to this measurement principle, the respective test specimen is initially in a first measurement or test phase with an insulation voltage well above the operating voltage acted upon and then in a second, subsequent measuring or test phase, first with a reduced, preparatory measuring voltage and finally with the actual measuring or test voltage, in which then the partial discharge is measured. The preparatory test voltage is above the maximum operating voltage of the relevant module and the actual test voltage below the maximum operating voltage of the module. The partial discharge must not exceed a value of 10 pico Coulomb (pC) in this measurement.
Bekannt ist es, bei der Produktion von Metall-Keramik-Substraten die für Leiterbahnen, Anschlüssen usw. benötigte Metallisierung auf einer Keramik, z.B. auf einerIt is known in the production of metal-ceramic substrates, the metallization required for printed conductors, terminals, etc. on a ceramic, e.g. on a
Aluminium-Oxid-Keramik mit Hilfe des sogenannten „Direct- Bonding"- Verfahrens bzw. bei Metallisierungen aus Kupfer mit Hilfe des sogenannten „DCB"-Verfahrens (Direct-Copper-Bonding-Technology) herzustellen, und zwar unter Verwendung von die Metallisierung bildenden Metall- bzw. Kupferfolien oder Metall- bzw. Kupferblechen, die an ihren Oberflächenseiten eine Schicht oder einen Überzug (Aufschmelzschicht) aus einer chemischen Verbindung aus dem Metall und einem reaktiven Gas , bevorzugt Sauerstoff aufweisen.To produce aluminum oxide ceramics by means of the so-called "direct bonding" method or in copper metallizations by means of the so-called "DCB" method (Direct Copper Bonding Technology), using metallization forming Metal or copper foils or metal or copper sheets having on their surface sides a layer or a coating (reflow layer) of a chemical compound of the metal and a reactive gas, preferably oxygen.
Bei diesem beispielsweise in der US-PS 3744 120 oder in der DE-PS 23 19 854 beschriebenen Verfahren bildet diese Schicht oder dieser ÜberzugIn this process, for example, in US-PS 3744 120 or in DE-PS 23 19 854 described this layer or coating forms
(Aufschmelzschicht) ein Eutektikum mit einer Schmelztemperatur unter der Schmelztemperatur des Metalls (z.B. Kupfers), so daß durch Auflegen der Folie auf die Keramik und durch Erhitzen sämtlicher Schichten diese miteinander verbunden werden können, und zwar durch Aufschmelzen des Metalls bzw. Kupfers im wesentlichen nur im Bereich der Aufschmelzschicht bzw. Oxidschicht.(Fused layer) a eutectic having a melting temperature below the melting temperature of the metal (eg copper), so that by applying the film to the ceramic and by heating all layers, these can be connected together, by melting the metal or copper substantially only in the region of the melting layer or oxide layer.
Das DCB-Verfahren weist dann z.B. folgende Verfahrensschritte auf: - Oxidieren einer Kupferfolie derart, daß sich eine gleichmäßige Kupferoxidschicht ergibt; - Auflegen des Kupferfolie auf die Keramikschicht;The DCB process then has the following process steps, for example: oxidizing a copper foil in such a way that a uniform copper oxide layer results; - placing the copper foil on the ceramic layer;
- Erhitzen des Verbundes auf eine Prozeßtemperatur zwischen etwa 1025 bis 10830C, z.B. auf ca. 10710C;- Heating the composite to a process temperature between about 1025 to 1083 0 C, for example to about 1071 0 C;
- Abkühlen auf Raumtemperatur.- Cool to room temperature.
Ein Nachteil der DCB-Technik besteht darin, dass prozessbedingt Fehlstellen zwischen der jeweiligen Metallisierung (Kupfer) und der Keramik auftreten. Diese Fehlstellen beeinträchtigen zwar die thermischen Eigenschaften eines unter Verwendung der DCB-Technik hergestellten Metall-Keramik-Substrates kaum, da die Anbindung, d.h. der Flächenanteil der Verbindung zwischen Keramik und Metall, der die Fehlstellen nicht aufweist, im Verhältnis zu der Gesamtfläche des Übergangs zwischen Metall- und Keramik in der Regel größer als 90% ist. Ein gewisses Problem ergibt sich aber durch die Fehlstellen in Bezug auf die Teilentladungsfestigkeit.A disadvantage of the DCB technique is that process-related defects between the respective metallization (copper) and the ceramic occur. Although these defects hardly affect the thermal properties of a metal-ceramic substrate produced using the DCB technique, since the bonding, i. the area ratio of the ceramic-to-metal bond not having the voids is generally greater than 90% relative to the total area of the transition between metal and ceramic. However, a certain problem arises due to the imperfections in terms of the partial discharge resistance.
Diese prozessbedingten Nachteile des DCB-Prozesses lassen sich beispielsweise durch die sogenannten Aktivlötverfahren vermeiden. Nachteilig ist aber hier, dass ein relativ teueres Lot erforderlich ist und dass zum Strukturieren der auf die Keramik aufgebrachten Metall schichten ein umständliches und mehrstufiges Verfahren notwendig ist, um zwischen benachbarten Leiterbahnen, Kontaktflächen usw. auch das gesamte elektrisch leitende Material (einschließlich Lot) zu entfernen, oder aber dass die die jeweilige Metallisierung bildende Metallschicht vor dem Verbinden mit der Keramikschicht oder dem Keramiksubstrat strukturiert werden muss.These process-related disadvantages of the DCB process can be avoided for example by the so-called active soldering. The disadvantage here, however, that a relatively expensive solder is required and that layers for structuring the deposited on the ceramic metal, a cumbersome and multi-stage process is necessary to between adjacent interconnects, contact surfaces, etc. also the entire electrically conductive material (including solder) remove, or that the metallization forming the respective metallization must be structured prior to bonding with the ceramic layer or the ceramic substrate.
Aufgabe der Erfindung ist es, ein Verfahren aufzuzeigen, mit dem trotz Anwendung des vorteilhaften DCB-Prozesses Fehlstellen vermieden, zumindest aber soweit reduziert werden, dass ein nachteiliger Einfluss auf die Eigenschaften des Metall- Keramik-Substrates und insbesondere auch auf die Teilentladungsfestigkeit nicht mehr feststellbar ist. Zur Lösung dieser Aufgabe ist ein Verfahren entsprechend dem Patentanspruch 1 ausgebildet. Bei dem erfindungsgemäßen Verfahren wird eine Anbindung der Metallisierungen bzw. der Metallschichten an die Keramik größer als 95% erreicht. Es werden auf jeden Fall Fehlstellen mit einem Durchmesser größer 50 μm vermieden. In überraschender Weise wird die Keramik durch die Nachbehandlung nicht geschädigt.The object of the invention is to provide a method by which, despite the use of the advantageous DCB process, defects are avoided, but at least reduced to the extent that an adverse effect on the properties of the metal-ceramic substrate and in particular on the partial discharge resistance is no longer detectable is. To solve this problem, a method according to claim 1 is formed. In the method according to the invention, a connection of the metallizations or the metal layers to the ceramic greater than 95% is achieved. It will be avoided in any case defects with a diameter greater than 50 microns. Surprisingly, the ceramic is not damaged by the aftertreatment.
Unter „Keramiksubstrat" ist im Sinne der Erfindung ganz allgemein eine Keramikschicht zu verstehen. Unter „Metall-Keramik-Substrat" ist im Sinne der Erfindung ganz allgemein ein Substrat bzw. eine Schichtenfolge zu verstehen, die wenigstens eine Keramikschicht und zumindest eine an wenigstens einerFor the purposes of the invention, a "metal-ceramic substrate" in the sense of the invention generally refers to a substrate or a layer sequence which comprises at least one ceramic layer and at least one at least one ceramic layer
Oberflächenseite der Keramikschicht vorgesehene Metallisierung aufweist. Unter „Anbindung" ist im Sinne der Erfindung derjenige Flächenanteil des Übergangs zwischen der jeweiligen Metallisierung und der Keramikschicht zu verstehen, der (Flächenanteil) Fehlstellen nicht aufweist und an dem somit eine unmittelbare Anbindung der Metallschicht an die Keramik besteht.Having surface side of the ceramic layer provided metallization. For the purposes of the invention, "bonding" is understood to mean that area fraction of the transition between the respective metallization and the ceramic layer which does not have (area fraction) defects and thus has a direct connection of the metal layer to the ceramic.
Die Nachbehandlung erfolgt bei der Erfindung unter Verwendung eines Inertgases als Druckgas mit einem Sauerstoffanteil bzw. Sauerstoffpartialdruck, der unter Berücksichtigung der Nachbehandlungstemperatur so eingestellt ist, dass der Sauerstoffpartialdruck größer ist als derjenige Partialdruck, bei dem eine Zersetzung der Bondgrenze zwischen den Kupfer und Keramik und damit ein Lösen der jeweiligen DCB-Verbindung zwischen dem Kuper und der Keramik auftreten könnte. Der Sauerstoffpartialdruck ist aber noch oben hin so begrenzt, dass keine nennenswerte Oxidation des Kupfers während der Nachbehandlung auftritt. Da mit abnehmender Nachbehandlungstemperatur die Oxidationsrate abnimmt, kann der Sauerstoffpartialdruck bei niedrigen Nachbehandlungstemperaturen entsprechend höher gewählt werden. Die Erfindung wird im Folgenden anhand der Figuren an Ausführungsbeispielen näher erläutert. Es zeigen:The post-treatment is carried out in the invention using an inert gas as a compressed gas with an oxygen content or partial pressure of oxygen, which is adjusted taking into account the aftertreatment temperature so that the oxygen partial pressure is greater than that partial pressure at which a decomposition of the bond boundary between the copper and ceramic and thus a release of the respective DCB connection between the copper and the ceramic could occur. However, the oxygen partial pressure is still so limited above that no appreciable oxidation of the copper occurs during the aftertreatment. Since the oxidation rate decreases with decreasing after-treatment temperature, the oxygen partial pressure can be selected correspondingly higher at low after-treatment temperatures. The invention will be explained in more detail below with reference to the figures of exemplary embodiments. Show it:
Fig. 1 in vereinfachter Darstellung ein Metall-Keramik-Substrat gemäß der Erfindung; Fig. 2 in vergrößerter Darstellung den Übergang zwischen der Keramikschicht und einer Metallisierung bei einem Metall-Keramik-Substrat vor der Nachbehandlung; Fig. 3 - 6 in jeweils verschiedenen Positionen Verfahrensschritte unterschiedlicherFig. 1 in a simplified representation of a metal-ceramic substrate according to the invention; 2 shows an enlarged view of the transition between the ceramic layer and a metallization in a metal-ceramic substrate before the aftertreatment. Fig. 3 - 6 in each case different positions process steps different
Verfahren zum Herstellen des Metall-Keramik-Substrates der Figur 1 ; Fig. 7 in einer Darstellung ähnlich Figur 1 eine weitere Ausführungsform des Metall- Keramik-Substrates; Fig. 8 in verschiedenen Positionen Verfahrensschritte unterschiedlicher Verfahren zum Herstellen des Metall-Keramik-Substrates der Figur 7;A method for producing the metal-ceramic substrate of Figure 1; FIG. 7 is a view similar to FIG. 1 of a further embodiment of the metal-ceramic substrate; FIG. 8 shows, in various positions, method steps of different methods for producing the metal-ceramic substrate of FIG. 7;
Fig. 9 in einer Darstellung ähnlich Figur 1 eine weitere Ausführungsform des Metall- Keramik-Substrates;FIG. 9 is a view similar to FIG. 1 of a further embodiment of the metal-ceramic substrate; FIG.
Fig. 10 in verschiedenen Positionen Verfahrensschritte unterschiedlicher Verfahren zum Herstellen des Metall-Keramik-Substrates der Figur 9.10 in various positions process steps of different methods for producing the metal-ceramic substrate of FIG. 9.
Die Figur 1 zeigt in vereinfachter Darstellung und im Schnitte in Kupfer-Keramik- Substrat 1 bestehend aus der Keramikschicht 2 und den Metallschichten 3 und 4, die jeweils von Folien aus Kupfer oder Kupferlegierung gebildet und mit Hilfe des DCB- Prozesses mit der Keramikschicht 2 verbunden sind. Das Substrat 1 ist beispielsweise das Basis-Substrat oder die Leiterplatte eines Leistungsmoduls für hohe Betriebsspannungen (größer 600 Volt). Wenigstens eine der beiden Metallschichten 3 bzw. 4 ist hierbei dann mit einer bekannten Technik, beispielsweise mit der1 shows in a simplified representation and in sections in copper-ceramic substrate 1 consisting of the ceramic layer 2 and the metal layers 3 and 4, each formed by films of copper or copper alloy and connected by means of the DCB process with the ceramic layer 2 are. The substrate 1 is, for example, the base substrate or the circuit board of a power module for high operating voltages (greater than 600 volts). At least one of the two metal layers 3 and 4 is in this case with a known technique, for example with the
Maskierungs- und Ätztechnik strukturiert, und zwar zur Bildung von Kontaktflächen, Leiterbahnen usw. für die auf dem Substrat 1 anzuordnenden passiven und/oder aktiven, das Modul bildenden Bauelemente. Die Figur 2 zeigt den Übergang zwischen einer Metallschicht 3 bzw. 4 und der Keramikschicht nach dem DCB-Prozess, und zwar mit einer Fehlstelle 5.Masking and etching technology structured, namely for the formation of contact surfaces, tracks, etc. for the passive and / or active, the module-forming components to be arranged on the substrate 1. FIG. 2 shows the transition between a metal layer 3 or 4 and the ceramic layer after the DCB process, namely with a defect 5.
Um die erforderliche hohe Teilentladungsfestigkeit zu erreichen, wirde das Substrat 1 nach dem Aufbringen der Metallschichten 3 und 4 in einem weiteren Verfahrensschritt auf eine Temperatur unterhalb der Prozesstemperatur des DCB-Prozesses, beispielsweise auf eine Temperatur im Bereich zwischen 450 und 1060° C erhitzt und hierbei zugleich unter Verwendung eines nicht reaktiven Gases bzw. Inertgases z.B. unter Verwendung von Argon oder Stickstoff mit einem Gasdruck im Bereich zwischen 400 und 2000 bar beaufschlagt. Durch diese Nachbehandlung (HIP- Nachbehandlung), bei der die Keramikschicht 2 nicht beschädigt wird, werden Hohlräume bzw. Fehlstellen 5, die sich eventuell am Übergang zwischen der Keramikschicht und der jeweiligen Metallschicht 3 bzw. 4 durch den DCB-Prozess bilden und die Teilentladungsfestigkeit reduzieren, vollständig oder nahezu vollständig beseitigt, so dass das Substrat 1 trotz seiner Ausbildung als DCB-Substrat die Anforderungen an die Teilentladungsfestigkeit voll und ganz erfüllt.In order to achieve the required high partial discharge resistance, after applying the metal layers 3 and 4, the substrate 1 is heated in a further process step to a temperature below the process temperature of the DCB process, for example to a temperature in the range between 450 and 1060 ° C., and thereby at the same time using a non-reactive gas or inert gas, for example subjected to a gas pressure in the range between 400 and 2000 bar using argon or nitrogen. By this post-treatment (HIP post-treatment), in which the ceramic layer 2 is not damaged, voids or voids 5, which may form at the transition between the ceramic layer and the respective metal layer 3 or 4 by the DCB process and the partial discharge resistance reduce, completely or almost completely eliminated, so that the substrate 1, despite its design as a DCB substrate fully meets the requirements for the partial discharge resistance.
Nachstehend werden verschiedene Möglichkeiten der Herstellung des Metall-Keramik- Substrates 1 an Beispielen näher erläutert.Hereinafter, various ways of producing the metal-ceramic substrate 1 are explained in more detail by examples.
Beispiel 1example 1
Bei diesem Verfahren, dessen Verfahrenssch ritte in Figur 3 in den Positionen a - g wiedergegeben sind, wird eine Keramikschicht 2 aus AI2O3 verwendet, und zwar mit äußeren Abmessungen von 130 x 180 mm und einer Dicke von 0,38 mm (Position a).In this method, the Verfahrenssch ritte in Figure 3 in the positions a - g are reproduced, a ceramic layer 2 of Al2O3 is used, with external dimensions of 130 x 180 mm and a thickness of 0.38 mm (position a).
Auf die Keramikschicht 2 wird zunächst einseitig ein die spätere Metallschicht 3 bildender Zuschnitt 3.1 aus einer voroxidierten Kupferfolie aufgelegt (Position b) und die aus der Keramikschicht 2 und dem Zuschnitt 3.1 bestehende Anordnung wird dann in einem geeigneten Ofen unter Sauerstoffausschluss für etwa 10 Minuten erhitzt bzw. vorgesintert, und zwar insbesondere zur Vernichtung der Härte des Kupfermaterials. Im Anschluss daran erfolgt ein Erhitzen der aus der Keramikschicht 2 und des Zuschnittes 3.1 bei einem Sauerstoffgehalt von < 20ppm auf ca. 1072° C, so dass dann nach einem Abkühlen der Zuschnitt 3.1 die mit der einen Oberflächenseite der Keramikschicht durch den DCB-Prozess verbundene Metallschicht 3 bildet (Position c).On the ceramic layer 2, first of all, a blank 3.1 made of a pre-oxidized copper foil is placed on one side (position b) and the arrangement consisting of the ceramic layer 2 and the blank 3.1 is then heated in a suitable oven with exclusion of oxygen for about 10 minutes or presintered, in particular for the destruction of the hardness of the copper material. This is followed by heating of the ceramic layer 2 and the blank 3.1 at an oxygen content of <20 ppm to about 1072 ° C, so that then after cooling the blank 3.1 connected to the one surface side of the ceramic layer by the DCB process Metal layer 3 forms (position c).
Nach dem Wenden der Keramikschicht 2 wird auf die andere Oberflächenseite dieser Keramikschicht ebenfalls ein Zuschnitt 4.2 aus der voroxidierten Kupferfolie aufgelegt (Position d) und die dann aus der Keramikschicht 2, der Metallschicht 3 und dem Zuschnitt 4.1 bestehende Anordnung erneut unter Sauerstoffausschluss für etwa 10 Minuten erhitzt, und zwar wiederum auf eine Temperatur deutlich unterhalb der Prozesstemperatur von etwa 1072° C des DCB-Prozesses. In einem weiteren Verfahrensschritt erfolgt dann das Bonden des Zuschnittes 4.1 mit der Keramikschicht 2, und zwar durch Erhitzen auf die DCB-Prozesstemperatur bei einem Sauerstoffgehalt von < 20ppm (Position e). Nach dem Abkühlen unterhalb der DCB-Prozesstemperatur weist das Substrat dann auch die mit der Keramikschicht 2 verbundene Metallisierung 4.After turning the ceramic layer 2, a blank 4.2 made of the pre-oxidized copper foil is also placed on the other surface side of this ceramic layer (position d) and the arrangement consisting of the ceramic layer 2, the metal layer 3 and the blank 4.1 re-oxygenated for about 10 minutes heated, again to a temperature well below the process temperature of about 1072 ° C of the DCB process. In a further method step, the blank 4.1 is then bonded to the ceramic layer 2, namely by heating to the DCB process temperature at an oxygen content of <20 ppm (position e). After cooling below the DCB process temperature, the substrate then also has the metallization 4 connected to the ceramic layer 2.
Zur Vermeidung der Fehlstellen 5 erfolgt dann in einem weiteren Verfahrensschritt die Nachbehandlung des Substrates 1 durch Erhitzen und Druckbeaufschlagung, und zwar in einem geschlossenen Druckraum 6 in einer Schutzgasatmosphäre, beispielsweise Argon-Atmosphäre mit einem Sauerstoffpartialdruck von etwa 6ppm durch Erhitzen auf eine Temperatur von etwa 560° C und bei einem Druck von etwa 1100 bar (Position f). Nach dieser Behandlung wird das Substrat 1 auf Raumtemperatur abgekühlt und es folgt dann ein Strukturieren der Metallschichten 3 und 4 durch Maskieren und Ätzen, so dass auf der Keramikschicht 2 die Metallstrukturen mehrerer Einzelsubstrate, d.h. auf der gemeinsamen Keramikschicht 2 im Mehrfach nutzen eine Vielzahl von Einzelsubstraten gebildet sind (Position g). Durch Laser-Ritzen mit einem geeigneten Laser, beispielsweise CO2-Laser, werden an einer Oberflächenseite der Keramikschicht 2 Sollbruchlinien zwischen den strukturierten Metallflächen der Einzelsubstrate erzeugt, so dass das Mehrfachsubstrat dann in die Einzelsubstrate gebrochen werden kann.In order to avoid the imperfections 5, the aftertreatment of the substrate 1 then takes place in a further process step by heating and pressurizing, in a closed pressure chamber 6 in a protective gas atmosphere, for example argon atmosphere with an oxygen partial pressure of about 6 ppm by heating to a temperature of about 560 ° C and at a pressure of about 1100 bar (position f). After this treatment, the substrate 1 is cooled to room temperature and then followed by structuring of the metal layers 3 and 4 by masking and etching, so that on the ceramic layer 2, the metal structures of several individual substrates, ie on the common ceramic layer 2 in multiple use a plurality of individual substrates are formed (position g). By laser scribing with a suitable laser, for example CO2 laser, are generated on a surface side of the ceramic layer 2 predetermined breaking lines between the structured metal surfaces of the individual substrates, so that the multiple substrate can then be broken into the individual substrates.
Das Ergebnis dieses Verfahrens sind Substrate mit einer hohen Anbindung der Metallisierungen 3 und 4 an die Keramik, d.h. mit einer Anbindung von wenigstens 95% und mit Fehlstellen 5, deren Durchmesser in der Ebene des Übergangs zwischen der Keramikschicht 2 und der Metallisierung 3 bzw. 4 deutlich kleiner als 50μm ist.The result of this process are substrates with high bonding of metallizations 3 and 4 to the ceramic, i. with a connection of at least 95% and with defects 5 whose diameter in the plane of the transition between the ceramic layer 2 and the metallization 3 or 4 is significantly smaller than 50 μm.
Dieses Verfahren kann auch modifiziert werden, beispielsweise in der Form, dass die Verfahrensschritte a - d zusammengefasst werden, d.h. beidseitig von der Keramikschicht 2 die Zuschnitte 3.1 und 4.1 aus der voroxidierten Kupferfolie angeordnet werden und die Anordnung in einem geeigneten Ofen unter Sauerstoffausschi uss erhitzt bzw. gesintert wird, worauf dann anschließend die beiden Zuschnitte 3.1 und 4.1 unter Verwendung des DCB-Prozesses mit der Keramikschicht 2 verbunden werden und zwar bei einem Sauerstoffgehalt < 20ppm und einer Temperatur von ca. 1072° C.This method can also be modified, for example in the form that the method steps a - d are summarized, i. On both sides of the ceramic layer 2, the blanks 3.1 and 4.1 are arranged from the pre-oxidized copper foil and the assembly is heated or sintered in a suitable furnace under Sauerstoffausschi uss then followed by the two blanks 3.1 and 4.1 using the DCB process with the ceramic layer 2 are connected and that at an oxygen content <20 ppm and a temperature of about 1072 ° C.
Weiterhin besteht auch die Möglichkeit, auf das Vorsintern der Zuschnitte 3.1 und 4.1 zu verzichten.Furthermore, it is also possible to dispense with the pre-sintering of the blanks 3.1 and 4.1.
Beispiel 2Example 2
Die Verfahrensschritte dieses Verfahrens sind in der Figur 4 wiedergegeben. Ausgangsmaterial ist eine AIN-Keramikschicht 2 mit den Abmessungen 130 x 180 mm und mit einer Dicke von 2 mm (Position a).The process steps of this process are shown in FIG. Starting material is an AIN ceramic layer 2 with the dimensions 130 x 180 mm and with a thickness of 2 mm (position a).
Die Keramikschicht 2 wird mit einer dünnen Schicht 2.1 aus AI2O3 versehen, und zwar durch Oxidieren bzw. Behandeln über eine Zeitdauer von 30 Minuten bei einer Temperatur von 1220° C in einer Stickstoff (N2) und Sauerstoff (O2) enthaltenden Atmosphäre, wobei das Verhältnis Stickstoff/Sauerstoff 80/20 beträgt (Position a1).The ceramic layer 2 is provided with a thin layer 2.1 of Al 2 O 3, by oxidation or treatment over a period of 30 minutes at a Temperature of 1220 ° C in a nitrogen (N2) and oxygen (O2) containing atmosphere, wherein the ratio of nitrogen / oxygen is 80/20 (position a1).
Es schließen sich dann die vorstehend im Zusammenhang mit dem Beispiel 1 beschriebenen Verfahrensschritte b - g an, wobei die Hitze-Druck-Nachbehandlung bei dieser Ausführungsform bei einer Temperatur von etwa 950° C und bei einem Druck von etwa 900 bar erfolgt.This is followed by the process steps b-g described above in connection with Example 1, the heat-pressure aftertreatment in this embodiment taking place at a temperature of approximately 950 ° C. and at a pressure of approximately 900 bar.
Das Ergebnis dieses Verfahrens ist wiederum ein Substrat 1 mit einer Anbindung der Metallschichten 3 und 4 größer als 95% und ohne Fehlstellen 5 mit einem Durchmesser größer 50m//.The result of this method is again a substrate 1 with a connection of the metal layers 3 and 4 greater than 95% and without defects 5 with a diameter greater than 50m //.
Beispiel 3Example 3
Bei diesem Verfahren, dessen Verfahrensschritte der Figur 5 wiedergegeben sind, wird eine AbOs-Keramikschicht 2 mit den Abmessungen 130 x 180 mm und mit einerIn this method, the process steps of Figure 5 are reproduced, is a AbOs ceramic layer 2 with the dimensions 130 x 180 mm and with a
Dicke von 0,63 mm verwendet. In die Keramikschicht 2 wird mit geeigneten Mitteln, beispielsweise durch Bohren Löcher 7 eingebracht, von denen der einfacheren Darstellung wegen nur eines gezeigt ist (Position a). Im Anschluss daran erfolgt den im Beispiel 1 angegebenen Verfahrensschritten b - e das Aufbringen der Metallschichten 3 und 4 auf die Keramikschicht 2.Thickness of 0.63 mm used. Holes 7 are introduced into the ceramic layer 2 by suitable means, for example by drilling, of which only one is shown for the sake of simplicity (position a). Subsequently, the method steps b-e shown in Example 1 are followed by the application of the metal layers 3 and 4 to the ceramic layer 2.
In der anschließenden Nachbehandlung bei einer Temperatur von etwa 800° C und bei einem Druck von 1000 bar (Position f) erfolgt dann nicht nur die Beseitigung der Fehlstellen 5, sondern auch ein Verformen der Metallschichten 3 und 4 in die Löcher 7 hinein und damit ein Verbinden dieser Metallschichten innerhalb der Öffnung 7, so dass eine Vielzahl von Durchkontaktierungen 8 erhalten ist. Im Anschluss an die Nachbehandlung erfolgt dann wiederum das Strukturieren der Metallisierungen 3 und 4, das Ritzen der Keramik mittels eines Lasers und das Vereinzeln der Einzelsubstrate durch Brechen entlang der erzeugten Sollbruchlinien. Das Ergebnis ist dann ein Substrat 1 a, welches nicht nur die hohe Anbindung der Kupferschichten 3 und 4 aufweist, sondern zugleich auch die Durchkontaktierung 7 besitzt (Position g).In the subsequent treatment at a temperature of about 800 ° C and at a pressure of 1000 bar (position f) then not only the elimination of the defects 5, but also a deformation of the metal layers 3 and 4 in the holes 7 into it and thus Connecting these metal layers within the opening 7, so that a plurality of vias 8 is obtained. Subsequent to the aftertreatment, the structuring of the metallizations 3 and 4, the scribing of the ceramic by means of a laser, and the singulation of the individual substrates by breaking along the generated predetermined breaking lines, then takes place again. The result is then a substrate 1 a, which not only has the high connection of the copper layers 3 and 4, but at the same time also has the through-hole 7 (position g).
Beispiel 4Example 4
Dieses Beispiel bezieht sich auf ein Verfahren, welches sich von dem Verfahren des Beispiels 3 dadurch unterscheidet, dass entsprechend der Figur 6 nach dem Verfahrensschritt d in jedes Loch 6, welches einen Durchmesser von 0,8 mm aufweist, vor dem Auflegen des Zuschnittes 4.1 jeweils eine Ronde 8 eingesetzt wird, die einen Durchmesser von 0.7 mm und eine axiale Länge von 0,3 mm besitzt.This example relates to a method which differs from the method of Example 3 in that according to Figure 6 after the step d in each hole 6, which has a diameter of 0.8 mm, before placing the blank 4.1 each a blank 8 is used which has a diameter of 0.7 mm and an axial length of 0.3 mm.
Im Anschluss daran erfolgt wiederum nach dem Bonden des Zuschnittes 4.1 (Position e) die Nachbehandlung in dem geschlossenen Raum 6 bei einem Druck von etwa 850 bar und einer Temperatur von etwas 1030° C (Position f).This is followed, in turn, after the bonding of the blank 4.1 (position e), the aftertreatment in the closed space 6 at a pressure of about 850 bar and a temperature of about 1030 ° C. (position f).
Nach der Strukturierung der Metallschicht 3 und 4 und nach dem Einbringen der Sollbruchlinien durch Laser-Ritzen erfolgt wiederum das Trennen des Mehrfachsubstrates in die Einzelsubstrate.After the structuring of the metal layer 3 and 4 and after the introduction of the predetermined breaking lines by laser scribing, the multi-substrate is again separated into the individual substrates.
Beispiel 5Example 5
Die Figur 7 zeigt als weitere mögliche Ausführungsform ein mehrschichtiges Substrat 1 b, welches zwei Keramikschichten 2, eine obere und eine untere, jeweils freiliegende Metallschicht 3 bzw. 4 sowie eine innere, die beiden Keramikschichten 2 miteinander verbindende Metallschicht 10 aufweist. Sämtliche Metallschichten 3, 4 und 10 sind wiederum von jeweils einem voroxidierten Zuschnitt 3.1 , 4.1 bzw. 10.1 aus einer Folie aus Kupfer oder aus einer Kupferlegierung gebildet und besitzen eine Dicke von etwa 0,3 mm. Die Herstellung des Substrates 1 b erfolgt beispielsweise mit einem Verfahren entsprechend der Figur 8, dessen einzelne Verfahrensschritte in dem nachfolgenden Beispiel angegeben sind.FIG. 7 shows, as a further possible embodiment, a multilayer substrate 1 b which has two ceramic layers 2, an upper and a lower respectively exposed metal layer 3 or 4 and an inner metal layer 10 connecting the two ceramic layers 2 to one another. All the metal layers 3, 4 and 10 are in turn each formed by a pre-oxidized blank 3.1, 4.1 and 10.1 from a sheet of copper or a copper alloy and have a thickness of about 0.3 mm. The preparation of the substrate 1 b, for example, with a method according to the figure 8, the individual process steps are given in the following example.
Ausgangsmaterialien für die Herstellung des Substrates I b sind zwei Keramikschichten oder Substrate 2 mit den Abmessungen 60 x 80 mm und mit einer Dicke von 0,38 mm sowie die drei jeweils voroxidierten Zuschnitte 3.1 , 4.1 und 10.1 aus der Folie aus Kupfer oder Kupferlegierung (Position a der Figur 8). Diese Elemente werden übereinandergestapelt, so dass sie dicht aufeinander aufliegen und zwischen den beiden Keramikschichten 2 der Zuschnitt 10.1 angeordnet ist und jeder Keramikschicht 2 außerdem der Zuschnitt 3.1 bzw. 4.1 benachbart liegt. Im Anschluss daran erfolgt das Verbinden bzw. Bonden mit Hilfe des DCB-Prozesses, und zwar durch Erhitzen des Stapels auf die DCB-Prozess-Temperatur von ca. 1072° C in einer Schutzgasatmosphäre mit einem Sauerstoffgehalt von weniger als 20 ppm. Nach Beendigung des DCB-Prozesses und nach dem Abkühlen ist bereits die dem Metall- Keramik-Substrat 1 b entsprechende Schichtenfolge erhalten (Position b).Starting materials for the production of the substrate I b are two ceramic layers or substrates 2 having the dimensions 60 x 80 mm and a thickness of 0.38 mm and the three respectively pre-oxidized blanks 3.1, 4.1 and 10.1 from the sheet of copper or copper alloy (position a of Figure 8). These elements are stacked on top of each other, so that they rest tightly against each other and between the two ceramic layers 2 of the blank 10.1 is arranged and each ceramic layer 2 is also the blank 3.1 or 4.1 adjacent. Subsequently, the bonding or bonding by means of the DCB process, by heating the stack to the DCB process temperature of about 1072 ° C in a protective gas atmosphere having an oxygen content of less than 20 ppm. After completion of the DCB process and after cooling, the layer sequence corresponding to the metal-ceramic substrate 1b is already obtained (position b).
Es erfolgt dann die Nachbehandlung bei einem Druck von 750 bar und einer Temperatur von 1030° C (Position c).The aftertreatment is then carried out at a pressure of 750 bar and a temperature of 1030 ° C (position c).
Das Ergebnis ist das Substrat 1 in Sandwichaufbau mit einer Anbindung der Metall¬ bzw. Kupferschichten 3, 4 und 10 an die Oberflächen der Keramikschichten 2 größer 95% und mit einem Fehlstellendurchmesser kleiner 50mμ.The result is the substrate 1 in sandwich construction with a connection of the metal or copper layers 3, 4 and 10 to the surfaces of the ceramic layers 2 greater than 95% and with a defect diameter smaller than 50mμ.
Die Figur 9 zeigt ein Metall-Keramik-Substrat 1c, welches sich von dem Substrat 1 b dadurch unterscheidet, dass zwischen der Metallschicht 10 und der unterenFIG. 9 shows a metal-ceramic substrate 1c, which differs from the substrate 1b in that between the metal layer 10 and the lower one
Keramikschicht 2 eine weitere strukturierte Metallschicht 11 vorgesehen ist und mit wenigstens einem Abschnitt 12 über eine Seite des Substrates 1c vorsteht und hierdurch äußere Anschlüsse für das mit dem Metall-Keramik-Substrat 1 c aufgebaute Modul bildet. Die Herstellung des Substrates 1 c erfolgt z.B. in Verfahrensschritten, die im nachfolgendem Beispiel 6 beschrieben sind.Ceramic layer 2, a further structured metal layer 11 is provided and protrudes with at least one portion 12 on one side of the substrate 1 c and thereby forms external terminals for the built-up with the metal-ceramic substrate 1 c module. The preparation of the substrate 1 c is carried out, for example, in process steps which are described in Example 6 below.
Beispiel 6Example 6
Die Herstellung des Substrates 1 c erfolgt entsprechend der Figur 10 dadurch, dass zunächst zwei Einzelsubstrate 1c.1 und 1c.2 hergestellt werden, und zwar ein Einzelsubstrat IcI bestehend aus einer Keramikschicht 2 und der oberen Metallschicht 3 sowie der Metallschicht 10 sowie ein weiteres Substrat 1c.2 bestehend aus der zweiten Keramikschicht 2 und der unteren Metallschicht 4. JedesThe substrate 1 c is produced in accordance with FIG. 10 by first producing two individual substrates 1 c 1 and 1 c 2, namely a single substrate I cI consisting of a ceramic layer 2 and the upper metal layer 3 and the metal layer 10 as well as a further substrate 1c.2 consisting of the second ceramic layer 2 and the lower metal layer 4. Each
Einzelsubstrat wird im Mehrfach nutzen gefertigt, d.h. jeweils zusammen mit einer Vielzahl gleichartiger Einzelsubstrate auf einer gemeinsamen Keramikplatte bzw. auf einem gemeinsamen Keramiksubstrat 2.Single substrate is made in multiple use, i. each together with a plurality of similar individual substrates on a common ceramic plate or on a common ceramic substrate. 2
Als Ausgangsmaterial für die Fertigung der ersten Teilsubstrate wird ein AbOs-Substrat mit den Abmessungen 130 x 180 mm und der Dicke von 0,63 mm verwendet, in die für durch die Durchkontaktierung 8 der Metall-Keramik-Substrate 1c Öffnungen 7 eingebracht sind. Für die Metallschichten 3 und 10 werden voroxidierte Zuschnitte 3.1 und 10.1 aus dem Kupferblech der Abmessungen 129 x 179 mm und einer Dicke von 0,3 mm verwendet. Nach dem Aufeinanderstapeln der Zuschnitte 3.1 und 10.1 sowie der Keramikschicht und Einbringen einer Ronde 9 in jede Öffnung 7 erfolgt durch Erhitzen die Prozess-Temperatur von ca. 1072° C und in einer Schutzgasatmoshphäre mit einem Sauerstoffgehalt < 20 ppm das Verbinden der Metallschichten 3 und 10 mit der Keramikschicht 2 sowie die Herstellung der Durchkontaktierungen 8 über die Ronden 9. Die jeweilige Öffnung 7 besitzt einen Durchmesser von etwa 0,9 mm und eine axiale Länge bzw. Höhe von 0,6 mm.As the starting material for the production of the first sub-substrates, an AbOs substrate with the dimensions 130 × 180 mm and the thickness of 0.63 mm is used, into which holes 7 are introduced through the plated-through hole 8 of the metal-ceramic substrates 1c. For the metal layers 3 and 10, pre-oxidized blanks 3.1 and 10.1 made of copper sheet of dimensions 129 × 179 mm and a thickness of 0.3 mm are used. After stacking the blanks 3.1 and 10.1 and the ceramic layer and introducing a Ronde 9 in each opening 7 is carried out by heating the process temperature of about 1072 ° C and in a Schutzgasatmoshphäre with an oxygen content <20 ppm joining the metal layers 3 and 10th with the ceramic layer 2 and the production of the plated-through holes 8 through the blanks 9. The respective opening 7 has a diameter of about 0.9 mm and an axial length or height of 0.6 mm.
Nach dem Bonden erfolgt das Strukturieren der Metallschichten 3 und 10 beispielsweise durch Maskieren und Ätzen in die Metallisierungen der einzelnen Teilsubstrate 1 c.1 und im Anschluss daran das Laser-Ritzen und das Zertrennen des Mehrfachsubstrates in diese einzelnen Teilsubstrate.After bonding, the structuring of the metal layers 3 and 10 takes place, for example, by masking and etching in the metallizations of the individual Sub-substrates 1 c.1 and then the laser scribing and severing of the multi-substrate into these individual sub-substrates.
In ähnlicher Weise werden die aus der Keramikschicht 2 und der Metallschicht 4 bestehenden zweiten Teilsubstrate 1 c.2 hergestellt, und zwar wiederum imSimilarly, the second sub-substrates 1 c.2 consisting of the ceramic layer 2 and the metal layer 4 are produced, again in FIG
Mehrfach nutzen unter Verwendung eines großformatigen AbO3-Substrates mit den Abmessungen 130 x 180 mm und der Dicke von 0,63 mm und unter Verwendung eines die Metallschicht 4 bildenden Zuschnitts 4.1 aus der Kupferfolie mit den Abmessungen 129 x 179 mm und der Dicke von 0,63 mm.Multiple use using a large AbO3 substrate 130 x 180 mm thick and 0.63 mm thick and using a blank 4.1 forming the metal layer 4 from the copper foil having the dimensions 129 x 179 mm and the thickness of 0, 63 mm.
Zum Verbinden der beiden Teilsubstrate 1 c.1 und 1c.2 zu dem Metall-Keramik- Substrat 1c wird dann auf die freiliegende Oberflächenseite der Keramikschicht 2 des unteren Teilsubstrates 1c.2 ein die Metallschicht 11 bildendes flaches Stanzteil 11.1 aufgelegt und auf die Oberseite dieses Stanzteils dann das obere Teilsubstrat mit der freiliegenden Seite der Metallschicht 10 aufgesetzt. Das Stanzteil 11.1 ist wiederum aus einer Kupferfolie hergestellt und voroxidiert. In einem weiteren DCB-Prozess erfolgt dann bei der DCB-Temperatur von 1072° C und in einer Schutzgasatmosphäre mit einem Sauerstoffgehalt kleiner als 20 ppm das Verbinden der beiden Teilsubstrate 1c.1 und 1c.2 über das Stanzteil 11.1. Im Anschluss daran erfolgt die Nachbehandlung, und zwar bei einem Druck von 750 bar und einer Temperatur von 1030° C in einer Schutzgasatmosphäre mit einem Sauerstoffanteil von etwa 10 ppm.For connecting the two sub-substrates 1 c.1 and 1c.2 to the metal-ceramic substrate 1c, a flat stamped part 11.1 forming the metal layer 11 is then placed on the exposed surface side of the ceramic layer 2 of the lower sub-substrate 1c.2 and on the upper side thereof Punching then the upper sub-substrate with the exposed side of the metal layer 10 is placed. The stamped part 11.1 is in turn made of a copper foil and pre-oxidized. In a further DCB process, the DCB temperature of 1072 ° C. and in a protective gas atmosphere with an oxygen content of less than 20 ppm are then used to connect the two sub-substrates 1c.1 and 1c.2 via the stamped part 11.1. This is followed by aftertreatment, namely at a pressure of 750 bar and a temperature of 1030 ° C in a protective gas atmosphere with an oxygen content of about 10 ppm.
Das Ergebnis ist das Metall-Keramik-Substrat 1 c in Sandwichaufbau mit wenigstens einer Durchkontaktierung 8 zur Verbindung der Metallschicht 3 bzw. der von dieser Metallschicht gebildeten Leiterbahnen, Kontaktflächen usw. mit äußeren Anschlüssen 12. Die Anbindung der Metall- bzw. Kupferschichten in allen Ebenen ist größer als 95%. Eventuell vorhandene Fehlstellen besitzen einen Durchmesser wesentlich kleiner als 50 μm. Die Erfindung wurde voranstehend an Ausführungsbeispielen beschrieben. Es versteht sich, dass zahlreiche Änderungen sowie Abwandlungen möglich sind, ohne dass dadurch der der Erfindung zugrundeliegende Erfindungsgedanke verlassen wird. So ist es insbesondere auch möglich, einzelnen der vorbeschriebenen Verfahren oder Verfahrensschritte zu kombinieren. The result is the metal-ceramic substrate 1 c in sandwich construction with at least one plated-through hole 8 for connecting the metal layer 3 or the interconnects formed by this metal layer, contact surfaces, etc. with outer terminals 12. The connection of the metal or copper layers in all Levels is greater than 95%. Any existing defects have a diameter substantially smaller than 50 microns. The invention has been described above by means of exemplary embodiments. It is understood that numerous changes and modifications are possible without thereby departing from the inventive concept underlying the invention. Thus, it is also possible in particular to combine individual ones of the above-described methods or method steps.
BezugszeichenlisteLIST OF REFERENCE NUMBERS
1, 1a, I c Metall-Keramik-Substrat I cI, l c.2 Teilsubstrat1, 1a, I c metal-ceramic substrate I cI, l c.2 sub-substrate
2 Keramikschicht bzw. Keramiksubstrat2 ceramic layer or ceramic substrate
2.1 Schicht aus AbOa2.1 layer of AbOa
3, 4 Metallschicht3, 4 metal layer
3.1, 4.1 Zuschnitt 5 Fehlstelle3.1, 4.1 cut 5 defect
6 geschlossener Raum für die Nachbehandlung6 closed room for after-treatment
7 Bohrung oder Loch für Durchkontaktierung7 hole or hole for via
8 Durchkontaktierung8 via
9 Teil- oder Kupferronde 10 Metallschicht9 part or copper blank 10 metal layer
10.1 Zuschnitt10.1 Cutting
11 Metallschicht11 metal layer
1 1.1 Zuschnitt oder Stanzteil1 1.1 Blank or stamped part
12 Anschluss 12 connection

Claims

Patentansprücheclaims
1. Verfahren zum Herstellen eines Metall-Keramik-Substrats, bei dem (Verfahren) auf mindestens einer Seite eines Keramiksubstrats oder einer Keramikschicht (2) eine Metallschicht (3, 4, 10, 11) unter Verwendung des Direct-Bonding-Verfahrens aufgebracht wird, dadurch gekennzeichnet, dass in einem nachfolgenden Verfahrensschritt das Metall-Keramik-Substrat oder - teilsubstrat bei einem Gasdruck (Nachbehandlungsdruck) im Bereich von etwa 400 bis 2000 bar und bei einer Nachbehandlungstemperatur im Bereich zwischen etwa 450 und 1060° C nachbehandelt wird.A method of manufacturing a metal-ceramic substrate, comprising applying (at least one) side of a ceramic substrate or a ceramic layer (2) a metal layer (3, 4, 10, 11) using the direct bonding method , characterized in that in a subsequent process step, the metal-ceramic substrate or - sub-substrate at a gas pressure (aftertreatment pressure) in the range of about 400 to 2000 bar and at an aftertreatment temperature in the range between about 450 and 1060 ° C post-treated.
2. Verfahren nach Anspruch 1, dadurch gekennzeichnet, dass die Nachbehandlungstemperatur etwa maximal 95 bis 99% der Fügetemperatur oder Prozess-Temperatur des des Direct-Bonding-Verfahrens beträgt.2. The method according to claim 1, characterized in that the aftertreatment temperature is about a maximum of 95 to 99% of the joining temperature or process temperature of the direct-bonding method.
3. Verfahren nach Anspruch 1 oder 2, dadurch gekennzeichnet, dass die Nachbehandlungstemperatur wenigstens 50% der Fügetemperatur beträgt.3. The method according to claim 1 or 2, characterized in that the post-treatment temperature is at least 50% of the joining temperature.
4. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Gasatmosphäre der Nachbehandlung in Abhängigkeit von der4. The method according to any one of the preceding claims, characterized in that the gas atmosphere of the aftertreatment in dependence on the
Nachbehandlungstemperatur einen Sauerstoffanteil bzw. einen Sauerstoffpartialdruck aufweist, der größer ist als derjenige Partialdruck, bei dem eine Zersetzung der Bondgrenzfläche zwischen Kupfer und Keramik auftritt, der aber nach oben so begrenzt ist, dass keine nennenswerte Oxidations des Kupfers stattfindet.After treatment temperature has an oxygen content or an oxygen partial pressure which is greater than that partial pressure at which a decomposition of the bonding interface between copper and ceramic occurs, but which is so limited above that no appreciable oxidation of the copper takes place.
5. Verfahren nach Anspruch 4, dadurch gekennzeichnet, dass der Sauerstoffpartialdruck bei einer Nachbehandlungstemperatur zwischen 900° C und 1060° C im Bereich zwischen 2 x 10"7 und 1 x 10'3 bar und bei einer Behandlungstemperatur zwischen 450° C und 900° C im Bereich zwischen 3 x 10"16 und 1 x 10"2 bar liegt.5. The method according to claim 4, characterized in that the oxygen partial pressure at an after-treatment temperature between 900 ° C and 1060 ° C in the range between 2 x 10 "7 and 1 x 10 '3 bar and at a Treatment temperature between 450 ° C and 900 ° C in the range between 3 x 10 "16 and 1 x 10 " 2 bar.
6. Verfahren nach einem der vorhergehenden Ansprüche, gekennzeichnet durch die Verwendung eines Inertgases, beispielsweise Argon oder Stickstoff als Druckgas bei der Nachbehandlung.6. The method according to any one of the preceding claims, characterized by the use of an inert gas, for example argon or nitrogen as the pressurized gas in the aftertreatment.
7. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Dicke der wenigstens einen Keramikschicht in der Größenordnung von etwa 0,2 bis 4 mm liegt.7. The method according to any one of the preceding claims, characterized in that the thickness of the at least one ceramic layer is in the order of about 0.2 to 4 mm.
8. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Dicke der wenigstens einen Metallschicht in der Größenordnung zwischen 0,07 und 1,0 mm liegt.8. The method according to any one of the preceding claims, characterized in that the thickness of the at least one metal layer is in the order of 0.07 to 1.0 mm.
9. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zur Erzeugung wenigstens einer Durchkontaktierung (8) in wenigstens eine Keramikschicht (2) zumindest eine Öffnung (7) eingebracht ist, und dass auf den beiden Oberflächenseiten der Keramikschicht (2) im Bereich der Öffnung (7) vorgesehene Metallschichten (3, 4) während der Nachbehandlung in die Öffnung hinein verformt und miteinander verbunden werden.9. The method according to any one of the preceding claims, characterized in that for generating at least one via (8) in at least one ceramic layer (2) at least one opening (7) is introduced, and that on the two surface sides of the ceramic layer (2) in the area The metal layers (3, 4) provided in the opening (7) are deformed into the opening during the after-treatment and are connected to one another.
10.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass für die Erzeugung wenigstens einer Durchkontaktierung in wenigstens einer Keramikschicht (2) wenigstens eine Öffnung (7) eingebracht ist, dass in diese10.Verfahren according to any one of the preceding claims, characterized in that for the production of at least one via in at least one ceramic layer (2) at least one opening (7) is introduced, that in this
Öffnung ein Körper (9) aus einem elektrisch leitenden Material, beispielsweise aus Kupfer eingesetzt wird, und dass während der Nachbehandlung die im Bereich der wenigstens einen Öffnung (7) an den beiden Oberflächenseiten der Keramikschicht (2) vorgesehenen Metallschichten durch bleibende Verformung gegen den Metallkörper (9) angepresst und mit diesem verbunden werden.Opening a body (9) made of an electrically conductive material, such as copper is used, and that during the after-treatment provided in the region of the at least one opening (7) on the two surface sides of the ceramic layer (2) metal layers by permanent deformation against the Metal body (9) pressed and connected to this.
11.Verfahren nach Anspruch 8, dadurch gekennzeichnet, dass der Durchmesser des11.Verfahren according to claim 8, characterized in that the diameter of the
Metallkörpers (7) gleich oder etwa gleich dem Durchmesser der Öffnung (7) ist.Metal body (7) is equal to or approximately equal to the diameter of the opening (7).
12. Verfahren nach Anspruch 10 oder 11 , dadurch gekennzeichnet, dass der12. The method according to claim 10 or 11, characterized in that the
Metallkörper senkrecht zu den Oberflächenseiten der Keramikschicht (2) eine Länge aufweist, die gleich oder kleiner ist als die Dicke der Keramikschicht.Metal body perpendicular to the surface sides of the ceramic layer (2) has a length which is equal to or smaller than the thickness of the ceramic layer.
13. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zur Herstellung eines Metall-Keramik-Substrats in Sandwichaufbau wenigstens zwei Keramikschichten (2) über wenigstens eine zwischen diesen angeordnete Metallschicht (10, 11) durch den DCB-Prozess miteinander verbunden werden.13. The method according to any one of the preceding claims, characterized in that for the production of a metal-ceramic substrate in sandwich construction at least two ceramic layers (2) via at least one metal layer arranged between them (10, 11) are interconnected by the DCB process.
14.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass auf jede Keramikschicht (2) außenliegend wenigstens eine Metallschicht (3, 4) mit dem DCB-Verfahren aufgebracht wird.14.A method according to any one of the preceding claims, characterized in that on each ceramic layer (2) externally at least one metal layer (3, 4) is applied by the DCB method.
15.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass zur Herstellung eines Metall-Keramik-Substrats in Sandwichaufbau ein erstes15.A method according to any one of the preceding claims, characterized in that for the production of a metal-ceramic substrate in sandwich construction, a first
Teilsubstrat (1 c.1) mit wenigstens einer ersten Keramikschicht (2) und mit zwei Metallisierungen (3, 10) an den beiden Oberflächenseiten sowie ein zweites Teilsubstrat (1c.2) mit wenigstens einer Keramikschicht (2) und zumindest einer Metallisierung (4) an einer Oberflächenseite der Keramikschicht unter Verwendung jeweils des DCB-Prozesses hergestellt werden, dass die beiden Teilsubstrate (IcI,Sub-substrate (1 c.1) with at least one first ceramic layer (2) and with two metallizations (3, 10) on the two surface sides and a second sub-substrate (1c.2) with at least one ceramic layer (2) and at least one metallization (4 ) are produced on one surface side of the ceramic layer using the DCB process in each case, that the two partial substrates (IcI,
1 c.2) in einem weiteren DCB-Prozess über wenigstens eine Metallschicht (10, 11) miteinander verbunden werden, und dass dann in einem weiteren Verfahrensschritt die Nachbehandlung bei dem Nachbehandlungsdruck und der Nachbehandlungstemperatur erfolgt.1 c.2) in a further DCB process via at least one metal layer (10, 11) are interconnected, and then that in a further process step, the aftertreatment at the aftertreatment pressure and the After treatment temperature takes place.
16. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die wenigstens eine Metallisierung nach der Nachbehandlung strukturiert wird.16. The method according to any one of the preceding claims, characterized in that the at least one metallization after the post-treatment is structured.
17.Verfahren nach Anspruch 16, dadurch gekennzeichnet, dass das Metall-Keramik- Substrat nach der Strukturierung der wenigstens einen Metallisierung in Einzelsubstrate zertrennt wird, beispielsweise durch Brechen entlang von Sollbruchlinien.17.A method according to claim 16, characterized in that the metal-ceramic substrate is divided after structuring the at least one metallization into individual substrates, for example by breaking along predetermined breaking lines.
18.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Nachbehandlung bei einer Nachbehandlungstemperatur von etwa 560° C und einen Nachbehandlungsdruck von 1900 bar erfolgt.18.Verfahren according to any one of the preceding claims, characterized in that the post-treatment at an after-treatment temperature of about 560 ° C and a post-treatment pressure of 1900 bar.
19.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Nachbehandlung bei einer Nachbehandlungstemperatur von etwa 950° C und bei einem Nachbehandlungsdruck von etwa 900 bar erfolgt.19.A method according to any one of the preceding claims, characterized in that the aftertreatment takes place at an after-treatment temperature of about 950 ° C and at a post-treatment pressure of about 900 bar.
2O.Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Nachbehandlung bei einer Nachbehandlungstemperatur von etwas 1030°2O.Verfahren according to any one of the preceding claims, characterized in that the aftertreatment at a post-treatment temperature of about 1030 °
C und bei einem Nachbehandlungsdruck von etwa 850 bar erfolgt.C and at an aftertreatment pressure of about 850 bar.
21. Verfahren nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Nachbehandlung bei einer Nachbehandlungstemperatur von etwa 1030° C und einem Nachbehandlungsdruck von etwa 750 bar erfolgt. 21. The method according to any one of the preceding claims, characterized in that the after-treatment is carried out at an after-treatment temperature of about 1030 ° C and an aftertreatment pressure of about 750 bar.
EP05747522A 2004-07-08 2005-04-23 Method for the production of a metal-ceramic substrate Active EP1774841B1 (en)

Applications Claiming Priority (3)

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DE102004033226 2004-07-08
DE102004033933A DE102004033933B4 (en) 2004-07-08 2004-07-14 Method for producing a metal-ceramic substrate
PCT/DE2005/000752 WO2006005281A1 (en) 2004-07-08 2005-04-23 Method for the production of a metal-ceramic substrate

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EP1774841A1 true EP1774841A1 (en) 2007-04-18
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EP (1) EP1774841B1 (en)
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AT (1) ATE480985T1 (en)
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WO (1) WO2006005281A1 (en)

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EP1774841B1 (en) 2010-09-08
DE102004033933B4 (en) 2009-11-05
WO2006005281A1 (en) 2006-01-19
ATE480985T1 (en) 2010-09-15
DE502005010233D1 (en) 2010-10-21
DE102004033933A1 (en) 2006-02-09
JP4764877B2 (en) 2011-09-07
US8683682B2 (en) 2014-04-01
US20090232972A1 (en) 2009-09-17
JP2008505503A (en) 2008-02-21

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