EP1768212A1 - Variable frequency conductive structure - Google Patents

Variable frequency conductive structure Download PDF

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Publication number
EP1768212A1
EP1768212A1 EP06121114A EP06121114A EP1768212A1 EP 1768212 A1 EP1768212 A1 EP 1768212A1 EP 06121114 A EP06121114 A EP 06121114A EP 06121114 A EP06121114 A EP 06121114A EP 1768212 A1 EP1768212 A1 EP 1768212A1
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Prior art keywords
conductive
plane
dielectric substrate
nanostructures
face
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EP06121114A
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German (de)
French (fr)
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EP1768212B1 (en
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Anne Ghis
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Commissariat a lEnergie Atomique et aux Energies Alternatives CEA
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Commissariat a lEnergie Atomique CEA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00—Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
    • H01Q15/0006—Devices acting selectively as reflecting surface, as diffracting or as refracting device, e.g. frequency filtering or angular spatial filtering devices
    • H01Q15/006—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces
    • H01Q15/008—Selective devices having photonic band gap materials or materials of which the material properties are frequency dependent, e.g. perforated substrates, high-impedance surfaces said selective devices having Sievenpipers' mushroom elements

Definitions

  • the invention relates to a conductive structure of variable extent depending on the frequency and, more particularly, a multi-band antenna ground plane.
  • two conductive reinforcements separated by a dielectric medium constitute a planar capacitor whose capacitance C is proportional to the surface of the reinforcements opposite:
  • VS ⁇ 0 ⁇ ⁇ r ⁇ S / e ( ⁇ 0 is the dielectric permittivity of the vacuum, ⁇ r the relative dielectric permittivity of the material between the two plates of the capacitor, S the surface of the armatures opposite, e the distance between the two plates).
  • the value of a capacitance is generally defined, on the one hand, by the geometry of the component (and, in particular, the design of the metallic zones) and, on the other hand, by the nature and the thicknesses of the insulation layers.
  • the number of capacitors is optimized according to the number of configurations required.
  • the control signals of the state of the switches must then be taken into account in the design and implementation of the device.
  • the implementation of such a switching system is particularly cumbersome to implement.
  • the dimensions of the circuits are no longer negligible in front of the wavelength of the electromagnetic excitation. This means that the trajectories of the electrons participating in the current strongly depend on the local geometry of the conductors. For example, reducing the width of a driver is an obstacle causing reflections and can be likened to a high frequency inductance.
  • connections between the elements of the same circuit can no longer be considered as perfect links.
  • These connections must indeed be considered as passive elements having a resistance, a inductance and a significant capacity.
  • switches active components of the transistors or electromechanical components type
  • microelectronic systems must take into account, depending on the frequency of use, on the one hand, the electrical characteristics and the specificities of implementation of these systems (implementation, technological process, postponement (for example, report says “above IC”), etc.) and, on the other hand, the management and routing of the control signals.
  • microstructures made by lithography and etching techniques, are then distributed over the entire surface of the ground plane. These microstructures insert resonant circuits of LC type (inductance L / capacitance C) in the propagation of the surface currents. The geometry of the microstructures is then calculated to make the high impedance ground plane at a specified resonant frequency, usually the frequency of the carrier.
  • LC type inductance L / capacitance C
  • FIGS. 1a and 1b illustrate a first example of an antenna ground plane of the prior art provided with such microstructures.
  • Figures 1a and 1b are respectively a cross-sectional view and a top view of the antenna ground plane.
  • a support S for example a printed circuit substrate, is covered, on a first face, with a set of disjointed conductive blocks m and, on a second face, opposite to the first face, with a uniform conductive plane P.
  • V-shaped metallized holes connect the conducting blocks m to the conductive plane P.
  • the distance d between two adjacent conductive blocks determines a capacitance Ca.
  • a metallized hole V constitutes an inductive inductance connection La.
  • the resulting surface is therefore inductive to the electrodes. low "frequencies and capacitive at" high "frequencies.
  • Figure 2 shows a sectional view of another example of antenna ground plane of the prior art.
  • the conductive blocks are not here all arranged in the same plane but in two parallel planes P1 and P2 separated by a distance D.
  • the blocks m2 located in the plane P2 are partially opposite the blocks m1 located in the plane P1.
  • the metal surfaces opposite the blocks m1 and m2 then constitute, with the dielectric layer of thickness D which separates them, capacitors. The control of the size of the facing surfaces makes it possible to adjust the capacity of the capacitors and hence the resonance frequency of the ground plane.
  • the prior art antenna ground planes described above are designed for a single carrier frequency. This represents a disadvantage. Indeed, some electromagnetic information transmission systems are likely, for different reasons, to change the carrier frequency. This is the case, for example, when a congestion of the communication network occurs. Specific antennas capable of transmitting at different carrier frequencies (eg dual-band antennas capable of transmitting at two different frequencies) have been designed for this purpose. An antenna ground plane calculated for a single carrier frequency is then not optimal for other carrier frequencies that may be used. The performance of the antenna is then deteriorated. The invention does not have the disadvantages mentioned above.
  • the second planar conductive layer completely surrounds the first planar conductive layer.
  • a second face of the substrate dielectric is covered with a conductive plane.
  • the one-dimensional nanostructures are carbon nanotubes.
  • the invention also relates to an antenna multi-band ground plane comprising a dielectric substrate covered, on a first face, with a set of plane conductive patterns and, on a second face, opposite to the first face, of a plane conductive, the planar conductive patterns being connected to the conductive plane through metallized holes which pass through the dielectric substrate, characterized in that an additional plane conductive pattern completely surrounds each plane conductive pattern, the additional planar conductive pattern being separated by a space, of the plane conductive pattern which it surrounds, and in that one-dimensional nanostructures having a resonance frequency are distributed on the dielectric substrate in the space between the plane conductive pattern and the additional conductive pattern, the one-dimensional nanostructures having an axis substantially perpendicular to the plane of the flat conductive patterns.
  • the one-dimensional nanostructures are carbon nanotubes.
  • electrically conductive blocks are present in the thickness of the dielectric substrate, in a plane parallel to the planes of the first and second faces of the dielectric substrate and situated between said planes of the first and second faces, at least a fraction of an additional plane conductive pattern facing at least a fraction of at least one electrically conductive pad, a metallized hole connecting each electrically conductive pad to the conductive plane on the second face of the dielectric substrate.
  • the invention advantageously makes it possible, among other things, simply to realize dual-band antennas whose ground plane is high impedance to the two carrier frequencies that may be used.
  • the inductance / capacitance characteristics of the microstructures are then adapted to the two resonance frequencies.
  • FIGS. 3a and 3b illustrate a first example of a conductive structure of variable extent as a function of the frequency according to the invention.
  • Figure 3a is a top view of the structure and
  • Figure 3b is a cross-sectional view.
  • the surface plane element SA and the surface plane strip SB are separated by a distance 11.
  • Nanostructures vertical unidimensional NT are distributed over a surface SAB, in a space of width 11 which separates the surface element SA from the surface strip SB.
  • the one-dimensional nanostructures NT are carbon nanotubes such as those described in the international patent application.
  • a "one-dimensional” nanostructure means a wire structure whose length is much greater than the diameter and whose average diameter varies, for example, from a few nanometers to a few tens of nanometers.
  • the "unidimensional" characteristic is essential to have a mechanical resonance whatever the direction of the excitation.
  • the axis of the unidimensional nanostructures is substantially perpendicular to the planar surface elements SA and SB.
  • carbon nanotubes are hollow carbon tubes whose average diameter varies from a few nanometers to a few tens of nanometers.
  • F R 1 ⁇ 875 2 8 ⁇ ⁇ 1 The 2 ⁇ 2 + ⁇ ⁇ i 2 E ⁇ b ⁇
  • the length L of the nanotubes may vary, for example, from substantially 10 nm to substantially 100 ⁇ m.
  • the nanotubes are carried on the substrate 1 in a manner which is described below, with reference to FIGS. 13 to 16.
  • each nanotube is a high quality factor band-pass filtering element.
  • the filtering properties of the nanotubes are used to modulate the conductive surfaces.
  • the assembly consisting of the surface plane element SA, of the set of nanotubes distributed over the surface SAB and of the surface conducting strip SB is it equivalent to a single conductive surface equal to the sum SA + SAB + SB, whereas at the frequencies located on either side of the resonant frequency, the surfaces SA and SB are electrically isolated from each other.
  • two adjacent coplanar conductive surfaces interconnected from edge to edge by a set of vertical one-dimensional nanostructures, behave as a single conductive surface at the resonant frequency nanostructures, and as two separate surfaces at the other frequencies.
  • the nanostructures disclosed in the international patent application WO 02/080361 are laid on a conductive surface. This conductive surface tends to strongly reduce, or even cancel, the filtering function of the nanostructures.
  • the nanostructures are laid directly on a dielectric substrate.
  • An advantageous feature of the unidimensional nanostructure filter is that it allows the currents to propagate in an omnidirectional and delocalized manner, ie over the entire length of the side common to the two conductive surfaces, without introducing any discontinuity in the geometry of the conductors.
  • one of the surfaces is connected to a conductive element only by a joint of one-dimensional nanostructures (this is the case, for example, of the surface SB in FIGS. 3a and 3b), it behaves as electrically floating. for all frequencies other than the resonance frequency of the nanostructures, and as electrically connected to the conductive element at the resonant frequency.
  • the dielectric substrate F is covered on a second face, opposite the first face, by a conductive plane M.
  • the conductive structure illustrated in FIGS. 3a and 3b is consequently a capacitor whose capacity varies according to the frequency.
  • the three surfaces S1, S2, S3 are electrically isolated from each other.
  • FIG. 5 represents a view from above of a first example of a dual band antenna ground plane according to the invention.
  • a set of elementary patterns are regularly distributed on the first face of the substrate S.
  • An elementary pattern consists of a conductive pad p1, surrounded by a set of vertical one-dimensional nanostructures NT, which set of vertical nanostructures NT is itself surrounded by a conductive strip b1.
  • the conductive pad p1, the set of vertical nanostructures NT and the band b1 have, for example, a hexagonal geometry.
  • the conductive pad p1 is electrically connected, by a metallized hole V, to a conductive plane P located on a second face of the opposite substrate of the first face (not shown in the figure).
  • the bands b1 are electrically isolated from the blocks p1 and, consequently, only the blocks p1 contribute to the conduction in the antenna ground plane.
  • the band b1 and the block p1 of each elementary pattern are electrically connected to each other. It is then the p1 blocks, the NT nanostructures and the b1 bands that contribute to the antenna ground plane. It is thus possible to produce a ground plane which has a high impedance at two frequencies of different carriers, one of the two carrier frequencies being the frequency resonance of nanostructures.
  • the high impedance ground plane is then advantageously a dual-band ground plane without band switching.
  • FIGS. 6a and 6b show a second example of a dual band antenna ground plane according to the invention.
  • This second example corresponds, in the context of the invention, to the dual-band ground plane shown in FIG. 2, in the context of the prior art.
  • the conductive blocks are then located in two parallel planes P1 and P2 separated by a distance D.
  • the difference between the dual-band ground plane of the invention and the dual-band ground plane of the prior art is that the conductive surface of the blocks m2 located in the plane P2 varies according to the frequency.
  • a square m2 is in fact composed of an electrically conductive plane element m2a surrounded by an electrically conductive flat strip m2b, the space separating the strip m2b from the plane element m2a being filled with one-dimensional vertical nanostructures NT.
  • the surface of a m2 block is thus the sum of the surface of the m2a element, the m2b band and the space filled with NT nanotubes which separates the m2a element from the m2b band.
  • the area of a square block m2 is the area of the single element m2a, the band m2b being electrically isolated from the rest of the circuit.
  • Figures 7 - 16 illustrate an example of a method of manufacturing nanotubes.
  • FIG. 7 illustrates the formation of a layer of metal or electrical conductor 2 on a dielectric substrate 1.
  • the dielectric substrate 1 is chosen as a function of the desired electrical performance.
  • the substrate 1 is it, preferably, alumina (SiO 2 ) for use frequencies of the order of a few Gigahertz.
  • Other materials can however be used such as, for example, sapphire, quartz, beryllium oxide, titanium dioxide, glass.
  • the material that constitutes the electrical conductor layer 2 is, for example, silver, copper, gold, aluminum, niobium, molybdenum, chromium, titanium, tantalum.
  • the formation of the conductive layer 2 is followed by the deposition of a resin layer 3 on the conductive layer 2, then an etching of the resin layer 3 (FIG. 8) followed by etching of the conductive layer 2 ( Figure 9).
  • the etchings of the resin layer 3 and the conductive layer 2 lead to a surface E of the dielectric substrate 1 which one-dimensional nanostructures will be formed (see Figure 9).
  • the zone Z once defined is etched (see FIG. 12) and a catalyst 6 is deposited on the resin layer 4 and on the surface E (FIG.
  • the catalyst 6 may be, for example, Fe / Co, Nickel, or Fe / Si, deposited by evaporation or by spraying to a thickness that may vary, for example, from 1 nm to 100 nm.
  • a withdrawal of the resin 4 is then carried out so that the catalyst 6 is only present on the surface E (see Figure 14).
  • Catalyst 6 is then configured into a multiplicity of plots.
  • Plt plots are obtained, for example, using fine lithography techniques that allow obtaining a regular network of studs or using thermal coalescence techniques that allow to obtain studs whose size is distributed in a mean distribution around a target value (see Figure 15).
  • Plt plots are, for example, cylindrical elements of a few nanometers in diameter.
  • the one-dimensional NT nanostructures are then produced in situ, by plasma-assisted chemical vapor deposition, more commonly known as PECVD ("Plasma Enhanced Chemical Vapor Deposition").
  • PECVD plasma-assisted chemical vapor deposition
  • the PECVD deposit is, for example, a vapor phase carbon deposit.
  • the NT nanostructures then grow naturally, unidimensionally, from the plots plt ( Figure 16).
  • the diameter of the studs determines that of the nanostructures (they are substantially equal). At most the PECVD deposit lasts, the longer the nanostructures are.
  • the upper end of the nanostructures is positioned substantially at the surface of the conductive layer 2.
  • the vibration of the nanostructures is caused by the electromagnetic field related to the displacement of the electrons in the conductive plane 2.
  • the vibration is maximal when the field is maximum, that is to say when the center of oscillation of the nanostructures is positioned, in height, substantially in the middle of the thickness of the conductive layer 2.
  • the substrate 1 has a single-level surface on which the conductive layer 2 and the NT nanostructures are placed (see FIG. According to other embodiments, the zone of the substrate 1 on which the nanostructures are placed is not at the same level as that where is placed conductive layer 2.
  • the substrate 1 is then either raised ( Figure 17) or lowered (see Figure 18) under the nanostructures.
  • the substrate 1 is selectively etched where the conductive layer 2 is intended to be deposited.
  • a lowered substrate it is the area where the nanotubes are placed which is previously selectively etched.

Abstract

The structure has a surface conductor electrically plane element (SA) and a surface conductive electrically plane strip (SB) disposed on a side of a dielectric substrate and provided with respective edges, and a set of vertical unidirectional nanostructures (NT) having a resonance frequency, where the nanostructures are carbon nanotubes. The nanostructures have an axis perpendicular to the plane of the element and strip and are distributed, directly on the substrate, between the edges of the element and strip, where each nanotube is a filtering element. An independent claim is also included for a multiband chip floor plan for an antenna.

Description

Domaine technique et art antérieurTechnical field and prior art

L'invention concerne une structure conductrice d'étendue variable en fonction de la fréquence et, plus particulièrement, un plan de masse multi-bandes pour antenne.The invention relates to a conductive structure of variable extent depending on the frequency and, more particularly, a multi-band antenna ground plane.

Électriquement, deux armatures conductrices séparées par un milieu diélectrique constituent un condensateur plan dont la capacité C est proportionnelle à la surface des armatures en regard : C = ϵ 0 ⁢ ϵ r ⁢ S / e

Figure imgb0001

(ε0 est la permittivité diélectrique du vide, εr la permittivité diélectrique relative du matériau entre les deux armatures du condensateur, S la surface des armatures en regard, e la distance entre les deux armatures).Electrically, two conductive reinforcements separated by a dielectric medium constitute a planar capacitor whose capacitance C is proportional to the surface of the reinforcements opposite: VS = ε 0 ⁢ ε r ⁢ S / e
Figure imgb0001
(ε 0 is the dielectric permittivity of the vacuum, ε r the relative dielectric permittivity of the material between the two plates of the capacitor, S the surface of the armatures opposite, e the distance between the two plates).

En électronique et en microélectronique, la valeur d'une capacité est en général définie, d'une part, par la géométrie du composant (et, en particulier, le dessin des zones métalliques) et, d'autre part, par la nature et les épaisseurs des couches d'isolant.In electronics and microelectronics, the value of a capacitance is generally defined, on the one hand, by the geometry of the component (and, in particular, the design of the metallic zones) and, on the other hand, by the nature and the thicknesses of the insulation layers.

Pour certaines applications, on peut vouloir modifier la valeur de la capacité insérée dans un circuit électrique. Différentes possibilités s'offrent pour modifier cette valeur :

  • a) changer la distance entre les armatures en regard, par exemple par un dispositif électromécanique, ou
  • b) changer les caractéristiques diélectriques du matériau isolant les armatures, par exemple en employant des matériaux spécifiques aux propriétés électrochimiques appropriés, ou encore
  • c) changer les dimensions de la surface des armatures en regard.
For some applications, you may want to change the value of the capacity inserted in an electrical circuit. Different possibilities are available to modify this value:
  • a) changing the distance between the armatures opposite, for example by an electromechanical device, or
  • b) changing the dielectric characteristics of the insulating material of the reinforcements, for example by using specific materials with the appropriate electrochemical properties, or
  • c) change the dimensions of the surface of the frames opposite.

Dans le dernier cas (c)), il est d'usage de relier plusieurs condensateurs à l'aide de commutateurs. Selon l'état des commutateurs, les condensateurs sont connectés en parallèle, en plus ou moins grand nombre, les uns avec les autres et forment ainsi une capacité égale à la somme des capacités individuelles des condensateurs connectés.In the last case (c)), it is customary to connect several capacitors using switches. Depending on the state of the switches, the capacitors are connected in parallel, in greater or lesser numbers, with each other and thus form a capacitance equal to the sum of the individual capacitances of the connected capacitors.

Le nombre de condensateurs est optimisé selon le nombre de configurations nécessaires. Les signaux de commande de l'état des commutateurs doivent alors être pris en compte dans la conception et la réalisation du dispositif. La mise en oeuvre d'un tel système de commutation est particulièrement lourde à mettre en oeuvre. Par ailleurs, dans le cas des dispositifs fonctionnant à haute fréquence, les dimensions des circuits ne sont plus négligeables devant la longueur d'onde de l'excitation électromagnétique. Cela signifie que les trajectoires des électrons participant au courant dépendent fortement de la géométrie locale des conducteurs. Par exemple, la diminution de la largeur d'un conducteur est un obstacle provoquant des réflexions et pouvant être assimilé à une inductance en haute fréquence.The number of capacitors is optimized according to the number of configurations required. The control signals of the state of the switches must then be taken into account in the design and implementation of the device. The implementation of such a switching system is particularly cumbersome to implement. Moreover, in the case of devices operating at high frequency, the dimensions of the circuits are no longer negligible in front of the wavelength of the electromagnetic excitation. This means that the trajectories of the electrons participating in the current strongly depend on the local geometry of the conductors. For example, reducing the width of a driver is an obstacle causing reflections and can be likened to a high frequency inductance.

La mise "en parallèle" de surfaces conductrices par l'intermédiaire d'éléments introduisant des discontinuités dans les conducteurs est alors électriquement plus complexe que la seule "addition" des surfaces. L'acheminement du signal de commande des commutateurs (transistors ou dispositifs électromécaniques) est également une contrainte, du fait de la densité habituelle des circuits.The "paralleling" of conductive surfaces by means of elements introducing discontinuities in the conductors is then electrically more complex than the "addition" of the surfaces. The routing of the control signal of the switches (transistors or electromechanical devices) is also a constraint, because of the usual density of the circuits.

Pour les mêmes raisons, en microélectronique, dans le cas d'applications à fréquences suffisamment élevées, les connections entre les éléments d'un même circuit ne peuvent plus être considérées comme des liaisons parfaites. Ces connections doivent en effet être considérées comme des éléments passifs ayant une résistance, une inductance et une capacité non négligeables. Il en est de même des commutateurs (composants actifs de type transistors ou composants électromécaniques) qui ne peuvent plus être considérés comme idéaux.For the same reasons, in microelectronics, in the case of applications with sufficiently high frequencies, the connections between the elements of the same circuit can no longer be considered as perfect links. These connections must indeed be considered as passive elements having a resistance, a inductance and a significant capacity. The same applies to switches (active components of the transistors or electromechanical components type) that can no longer be considered as ideal.

La conception des systèmes microélectroniques doit alors prendre en compte, en fonction des fréquences d'utilisation, d'une part, les caractéristiques électriques et les spécificités de mise en oeuvre de ces systèmes (implantation, procédé technologique, report (par exemple, report dit "above IC"), etc.) et, d'autre part, la gestion et l'acheminement des signaux de commande.The design of microelectronic systems must take into account, depending on the frequency of use, on the one hand, the electrical characteristics and the specificities of implementation of these systems (implementation, technological process, postponement (for example, report says "above IC"), etc.) and, on the other hand, the management and routing of the control signals.

Dans le cas particulier des plans de masse pour antenne haute fréquence, les courants de surface générés dans le plan de masse des antennes diminuent les performances de celles-ci. Pour éviter ces courants, des techniques de structuration de surface ont été développées. Des microstructures, réalisées par des techniques de lithographie et gravure, sont alors réparties sur l'ensemble de la surface du plan de masse. Ces microstructures insèrent des circuits résonants de type LC (inductance L/capacité C) dans la propagation des courants de surface. La géométrie des microstructures est alors calculée pour rendre le plan de masse haute impédance à une fréquence de résonance spécifiée, en général la fréquence de la porteuse.In the particular case of ground planes for high frequency antenna, surface currents generated in the ground plane of antennas reduce the performance thereof. To avoid these currents, surface structuring techniques have been developed. Microstructures, made by lithography and etching techniques, are then distributed over the entire surface of the ground plane. These microstructures insert resonant circuits of LC type (inductance L / capacitance C) in the propagation of the surface currents. The geometry of the microstructures is then calculated to make the high impedance ground plane at a specified resonant frequency, usually the frequency of the carrier.

Les figures 1a et 1b illustrent un premier exemple de plan de masse d'antenne de l'art antérieur muni de telles microstructures. Les figures 1a et 1b sont respectivement une vue en coupe transversale et une vue de dessus du plan de masse d'antenne.FIGS. 1a and 1b illustrate a first example of an antenna ground plane of the prior art provided with such microstructures. Figures 1a and 1b are respectively a cross-sectional view and a top view of the antenna ground plane.

Un support S, par exemple un substrat de circuit imprimé, est recouvert, sur une première face, d'un ensemble de pavés conducteurs disjoints m et, sur une deuxième face, opposée à la première face, d'un plan conducteur uniforme P. Des trous métallisés V relient les pavés conducteurs m au plan conducteur P. La distance d qui sépare deux pavés conducteurs voisins détermine une capacité Ca. Un trou métallisé V constitue une liaison inductive d'inductance La. La surface résultante est en conséquence inductive aux "basses" fréquences et capacitive aux fréquences "élevées". L'impédance du plan de masse de l'antenne est alors très élevée à la fréquence de résonance donnée par l'équation (2) : F ⁢ o = 2 ⁢ Π ⁢ ( L ⁢ a × C ⁢ a ) - 1 / 2

Figure imgb0002
A support S, for example a printed circuit substrate, is covered, on a first face, with a set of disjointed conductive blocks m and, on a second face, opposite to the first face, with a uniform conductive plane P. V-shaped metallized holes connect the conducting blocks m to the conductive plane P. The distance d between two adjacent conductive blocks determines a capacitance Ca. A metallized hole V constitutes an inductive inductance connection La. The resulting surface is therefore inductive to the electrodes. low "frequencies and capacitive at" high "frequencies. The impedance of the ground plane of the antenna is then very high at the resonance frequency given by equation (2): F ⁢ o = 2 ⁢ Π ⁢ ( The ⁢ at × VS ⁢ at ) - 1 / 2
Figure imgb0002

La figure 2 représente une vue en coupe d'un autre exemple de plan de masse d'antenne de l'art antérieur. Les pavés conducteurs ne sont pas ici tous disposés dans un même plan mais dans deux plans parallèles P1 et P2 séparés par une distance D. Les pavés m2 situés dans le plan P2 sont partiellement en regard des pavés m1 situés dans le plan P1. Les surfaces métalliques en regard des pavés m1 et m2 constituent alors, avec la couche de diélectrique d'épaisseur D qui les sépare, des condensateurs. Le contrôle de la dimension des surfaces en regard permet d'ajuster la capacité des condensateurs et, partant, la fréquence de résonance du plan de masse.Figure 2 shows a sectional view of another example of antenna ground plane of the prior art. The conductive blocks are not here all arranged in the same plane but in two parallel planes P1 and P2 separated by a distance D. The blocks m2 located in the plane P2 are partially opposite the blocks m1 located in the plane P1. The metal surfaces opposite the blocks m1 and m2 then constitute, with the dielectric layer of thickness D which separates them, capacitors. The control of the size of the facing surfaces makes it possible to adjust the capacity of the capacitors and hence the resonance frequency of the ground plane.

Les plans de masse d'antenne de l'art antérieur décrits ci-dessus sont conçus pour une fréquence de porteuse unique. Ceci représente un inconvénient. En effet, certains systèmes de transmission d'informations par voie électromagnétique sont susceptibles, pour différentes raisons, de changer de fréquence de porteuse. C'est le cas, par exemple, lorsque se produit un encombrement du réseau de communication. Des antennes spécifiques, capables d'émettre à des fréquences de porteuse différentes (par exemple des antennes bi-bande pouvant émettre à deux fréquences différentes) ont été conçues à cette fin. Un plan de masse d'antenne calculé pour une fréquence de porteuse unique n'est alors pas optimal pour les autres fréquences de porteuse susceptibles d'être utilisées. Les performances de l'antenne s'en trouvent alors détériorées. L'invention ne présente pas les inconvénients mentionnés ci-dessus.The prior art antenna ground planes described above are designed for a single carrier frequency. This represents a disadvantage. Indeed, some electromagnetic information transmission systems are likely, for different reasons, to change the carrier frequency. This is the case, for example, when a congestion of the communication network occurs. Specific antennas capable of transmitting at different carrier frequencies (eg dual-band antennas capable of transmitting at two different frequencies) have been designed for this purpose. An antenna ground plane calculated for a single carrier frequency is then not optimal for other carrier frequencies that may be used. The performance of the antenna is then deteriorated. The invention does not have the disadvantages mentioned above.

Exposé de l'inventionPresentation of the invention

En effet, l'invention concerne une structure conductrice comprenant au moins une première couche conductrice plane déposée sur une première face d'un substrat diélectrique, la première couche conductrice plane étant munie d'au moins un bord, caractérisée en ce qu'elle comprend :

  • au moins une deuxième couche conductrice plane déposée sur la première face du substrat diélectrique, la deuxième couche conductrice plane étant munie d'au moins un bord en regard du bord de la première couche conductrice plane, et
  • un ensemble de nanostructures unidimensionnelles ayant une fréquence de résonance, les nanostructures unidimensionnelles ayant un axe sensiblement perpendiculaire au plan des première et deuxième couches conductrices et étant réparties, sur le substrat diélectrique, entre le bord de la première couche conductrice plane et le bord de la deuxième couche conductrice plane.
Indeed, the invention relates to a conductive structure comprising at least a first planar conductive layer deposited on a first face of a dielectric substrate, the first planar conductive layer being provided with at least one edge, characterized in that it comprises :
  • at least one second planar conductive layer deposited on the first face of the dielectric substrate, the second planar conductive layer being provided with at least one edge facing the edge of the first planar conductive layer, and
  • a set of unidimensional nanostructures having a resonance frequency, the one-dimensional nanostructures having an axis substantially perpendicular to the plane of the first and second conductive layers and being distributed on the dielectric substrate between the edge of the first conductive flat layer and the edge of the second flat conductive layer.

Selon une caractéristique supplémentaire de l'invention, la deuxième couche conductrice plane entoure complètement la première couche conductrice plane.According to a further feature of the invention, the second planar conductive layer completely surrounds the first planar conductive layer.

Selon une caractéristique supplémentaire de l'invention, une deuxième face du substrat diélectrique, opposée à la première face, est recouverte d'un plan conducteur.According to a further characteristic of the invention, a second face of the substrate dielectric, opposite to the first face, is covered with a conductive plane.

Selon une caractéristique supplémentaire de l'invention, les nanostructures unidimensionnelles sont des nanotubes de carbone.According to a further characteristic of the invention, the one-dimensional nanostructures are carbon nanotubes.

L'invention concerne également un plan de masse multi-bandes pour antenne comprenant un substrat diélectrique recouvert, sur une première face, d'un ensemble de motifs conducteurs plans et, sur une deuxième face, opposée à la première face, d'un plan conducteur, les motifs conducteurs plans étant reliés au plan conducteur par l'intermédiaire de trous métallisés qui traversent le substrat diélectrique, caractérisé en ce qu'un motif conducteur plan supplémentaire entoure complètement chaque motif conducteur plan, le motif conducteur plan supplémentaire étant séparé, par un espace, du motif conducteur plan qu'il entoure, et en ce que des nanostructures unidimensionnelles ayant une fréquence de résonance sont réparties, sur le substrat diélectrique, dans l'espace qui sépare le motif conducteur plan du motif conducteur supplémentaire, les nanostructures unidimensionnelles ayant un axe sensiblement perpendiculaire au plan des motifs conducteurs plans.The invention also relates to an antenna multi-band ground plane comprising a dielectric substrate covered, on a first face, with a set of plane conductive patterns and, on a second face, opposite to the first face, of a plane conductive, the planar conductive patterns being connected to the conductive plane through metallized holes which pass through the dielectric substrate, characterized in that an additional plane conductive pattern completely surrounds each plane conductive pattern, the additional planar conductive pattern being separated by a space, of the plane conductive pattern which it surrounds, and in that one-dimensional nanostructures having a resonance frequency are distributed on the dielectric substrate in the space between the plane conductive pattern and the additional conductive pattern, the one-dimensional nanostructures having an axis substantially perpendicular to the plane of the flat conductive patterns.

Selon une caractéristique supplémentaire de l'invention, les nanostructures unidimensionnelles sont des nanotubes de carbone.According to a further characteristic of the invention, the one-dimensional nanostructures are carbon nanotubes.

Selon une caractéristique supplémentaire de l'invention, des pavés électriquement conducteurs sont présents, dans l'épaisseur du substrat diélectrique, dans un plan parallèle aux plans des première et deuxième faces du substrat diélectrique et situé entre lesdits plans des première et deuxième faces, au moins une fraction d'un motif conducteur plan supplémentaire étant en regard d'au moins une fraction d'au moins un pavé électriquement conducteur, un trou métallisé reliant chaque pavé électriquement conducteur au plan conducteur situé sur la deuxième face du substrat diélectrique.According to a further feature of the invention, electrically conductive blocks are present in the thickness of the dielectric substrate, in a plane parallel to the planes of the first and second faces of the dielectric substrate and situated between said planes of the first and second faces, at least a fraction of an additional plane conductive pattern facing at least a fraction of at least one electrically conductive pad, a metallized hole connecting each electrically conductive pad to the conductive plane on the second face of the dielectric substrate.

Le procédé de fabrication de structure conductrice selon l'invention comprend :

  • une formation de couche de conducteur électrique sur un substrat diélectrique,
  • une formation de couche de résine sur la couche de conducteur électrique,
  • une gravure locale de la couche de résine et de la couche de conducteur électrique afin de dégager une surface du substrat diélectrique,
  • un dépôt de couche de résine sur ladite surface du substrat diélectrique et sur la couche de conducteur électrique qui entoure la surface du substrat diélectrique,
  • une étape de définition, à partir de ladite surface du substrat diélectrique, d'une zone de croissance pour les nanostructures unidimensionnelles,
  • une étape de gravure de la couche de résine pour former la zone de croissance préalablement définie,
  • un dépôt de catalyseur sur la couche de résine et la surface du substrat diélectrique,
  • un retrait de la couche de résine recouverte du catalyseur,
  • une étape de configuration du catalyseur sous forme de plots,
  • une croissance de nanostructures unidimensionnelles à partir des plots par dépôt PECVD.
The conductive structure manufacturing method according to the invention comprises:
  • an electrical conductor layer formation on a dielectric substrate,
  • a resin layer formation on the electrical conductor layer,
  • local etching of the resin layer and the electrical conductor layer to expose a surface of the dielectric substrate,
  • a resin layer deposit on said surface of the dielectric substrate and on the electrical conductor layer which surrounds the surface of the dielectric substrate,
  • a step of defining, from said surface of the dielectric substrate, a growth zone for the one-dimensional nanostructures,
  • a step of etching the resin layer to form the previously defined growth zone,
  • a catalyst deposit on the resin layer and the surface of the dielectric substrate,
  • a removal of the resin layer coated with the catalyst,
  • a step of configuring the catalyst in the form of pads,
  • one-dimensional nanostructure growth from the plots by PECVD deposition.

L'invention permet avantageusement, entre autres, de réaliser simplement des antennes bi-bande dont le plan de masse est haute impédance aux deux fréquences de porteuse susceptibles d'être utilisées. Les caractéristiques inductance/capacité des microstructures sont alors adaptées aux deux fréquences de résonance.The invention advantageously makes it possible, among other things, simply to realize dual-band antennas whose ground plane is high impedance to the two carrier frequencies that may be used. The inductance / capacitance characteristics of the microstructures are then adapted to the two resonance frequencies.

Brève description des figuresBrief description of the figures

D'autres caractéristiques et avantages de l'invention apparaîtront à la lecture d'un mode de réalisation préférentiel fait en référence aux figures jointes parmi lesquelles :

  • les figures 1a et 1b, déjà décrites, illustrent un premier exemple de plan de masse d'antenne selon l'art connu,
  • la figure 2, déjà décrite, illustre un deuxième exemple de plan de masse d'antenne selon l'art connu,
  • les figures 3a et 3b illustrent un premier exemple de surface conductrice d'étendue variable en fonction de la fréquence selon l'invention,
  • la figure 4 illustre un deuxième exemple de surface conductrice d'étendue variable en fonction de la fréquence selon l'invention,
  • la figure 5 illustre un premier exemple de plan de masse d'antenne bi-bande selon l'invention,
  • les figures 6a et 6b illustrent un deuxième exemple de plan de masse d'antenne bi-bande selon l'invention,
  • les figures 7 - 16 illustrent un exemple de procédé de réalisation de nanostructures unidimensionnelles selon l'invention,
  • les figures 17 et 18 illustrent deux variantes d'un exemple de dispositif obtenu selon le procédé décrit aux figures 7-16.
Other features and advantages of the invention will appear on reading a preferred embodiment with reference to the appended figures among which:
  • FIGS. 1a and 1b, already described, illustrate a first example of an antenna ground plane according to the known art,
  • FIG. 2, already described, illustrates a second example of an antenna ground plane according to the known art,
  • FIGS. 3a and 3b illustrate a first example of a conductive surface of variable extent as a function of the frequency according to the invention,
  • FIG. 4 illustrates a second example of a conductive surface of variable extent as a function of the frequency according to the invention,
  • FIG. 5 illustrates a first example of a dual band antenna ground plane according to the invention,
  • FIGS. 6a and 6b illustrate a second example of a dual-band antenna ground plane according to the invention,
  • FIGS. 7-16 illustrate an exemplary method for producing one-dimensional nanostructures according to the invention,
  • Figures 17 and 18 illustrate two variants of an exemplary device obtained according to the method described in Figures 7-16.

Sur toutes les figures, les mêmes repères désignent les mêmes éléments.In all the figures, the same references designate the same elements.

Description détaillée de modes de réalisation de l'invention.DETAILED DESCRIPTION OF EMBODIMENTS OF THE INVENTION

Les figures 3a et 3b illustrent un premier exemple de structure conductrice d'étendue variable en fonction de la fréquence selon l'invention. La figure 3a est une vue de dessus de la structure et la figure 3b en est une vue en coupe transversale.FIGS. 3a and 3b illustrate a first example of a conductive structure of variable extent as a function of the frequency according to the invention. Figure 3a is a top view of the structure and Figure 3b is a cross-sectional view.

Un milieu diélectrique F est recouvert, sur une première face, d'un élément plan électriquement conducteur de surface SA (SA = a x b) et d'une bande plane électriquement conductrice de surface SB qui entoure l'élément plan de surface SA. L'élément plan de surface SA et la bande plane de surface SB sont séparés par une distance 11. Des nanostructures unidimensionnelles verticales NT sont réparties sur une surface SAB, dans un espace de largeur 11 qui sépare l'élément de surface SA de la bande de surface SB. Selon le mode de réalisation préférentiel de l'invention, les nanostructures unidimensionnelles NT sont des nanotubes de carbone tels que ceux décrits dans la demande de brevet internationale WO 02/080361 A1 intitulée "Carbon Nanotube Array RF Filter", déposée le 1er avril 2002 au nom du "California Institute Of Technology" et publiée le 10 octobre 2002. Il est également possible d'utiliser d'autres matériaux pour réaliser les nanostructures unidimensionnelles. Le carbone est préférentiellement choisi pour son excellente stabilité chimique et mécanique. Des nanofils peuvent également être utilisés.A dielectric medium F is covered, on a first face, with an electrically conductive surface element SA (SA = axb) and an electrically conductive flat surface strip SB which surrounds the surface plane element SA. The surface plane element SA and the surface plane strip SB are separated by a distance 11. Nanostructures vertical unidimensional NT are distributed over a surface SAB, in a space of width 11 which separates the surface element SA from the surface strip SB. According to the preferred embodiment of the invention, the one-dimensional nanostructures NT are carbon nanotubes such as those described in the international patent application. WO 02/080361 A1 entitled "Carbon Nanotube Array RF Filter", filed on 1 April 2002 on behalf of the "California Institute Of Technology" and published on 10 October 2002. It is also possible to use other materials to make them one-dimensional nanostructures. Carbon is preferentially chosen for its excellent chemical and mechanical stability. Nanowires can also be used.

De façon générale, par nanostructure "unidimensionnelle", il faut entendre une structure filaire dont la longueur est très supérieure au diamètre et dont le diamètre moyen varie, par exemple, de quelques nanomètres à quelques dizaines de nanomètres. La caractéristique "unidimensionnelle" est essentielle pour avoir une résonance mécanique quelle que soit la direction de l'excitation. L'axe des nanostructures unidimensionnelles est sensiblement perpendiculaire aux éléments plans de surfaces SA et SB.In general, a "one-dimensional" nanostructure means a wire structure whose length is much greater than the diameter and whose average diameter varies, for example, from a few nanometers to a few tens of nanometers. The "unidimensional" characteristic is essential to have a mechanical resonance whatever the direction of the excitation. The axis of the unidimensional nanostructures is substantially perpendicular to the planar surface elements SA and SB.

Selon le mode de réalisation préférentiel de l'invention, les nanotubes de carbone sont des tubes de carbone creux dont le diamètre moyen varie de quelques nanomètres à quelques dizaines de nanomètres. Pour un nanotube ayant un diamètre extérieur Δ, un diamètre intérieur Δi, une longueur L, une densité p et un module d'élasticité Eb, il apparaît que la fréquence de résonance FR s'écrit : F R = 1 ⁢ 875 2 8 ⁢ Π 1 L 2 Δ 2 + Δ ⁢ i 2 E ⁢ b ρ

Figure imgb0003
According to the preferred embodiment of the invention, carbon nanotubes are hollow carbon tubes whose average diameter varies from a few nanometers to a few tens of nanometers. For a nanotube having an outside diameter Δ, a diameter inside Δi, a length L, a density p and a modulus of elasticity Eb, it appears that the resonance frequency F R is written: F R = 1 ⁢ 875 2 8 ⁢ Π 1 The 2 Δ 2 + Δ ⁢ i 2 E ⁢ b ρ
Figure imgb0003

La longueur L des nanotubes peut varier, par exemple, de sensiblement 10nm à sensiblement 100µm. Les nanotubes sont reportés sur le substrat 1 d'une manière qui est décrite ci-dessous, en référence aux figures 13 à 16.The length L of the nanotubes may vary, for example, from substantially 10 nm to substantially 100 μm. The nanotubes are carried on the substrate 1 in a manner which is described below, with reference to FIGS. 13 to 16.

De l'équation (3) ci-dessus, il apparaît que chaque nanotube est un élément de filtrage de type passe-bande à facteur de qualité élevé. Dans le cadre de l'invention, les propriétés de filtrage des nanotubes sont utilisées pour moduler les surfaces conductrices. Ainsi, à la fréquence de résonance FR des nanotubes, l'ensemble constitué de l'élément plan de surface SA, de l'ensemble de nanotubes répartis sur la surface SAB et de la bande conductrice de surface SB est-il équivalent à une surface conductrice unique égale à la somme SA + SAB + SB, alors que, aux fréquences situées de part et d'autre de la fréquence de résonance, les surfaces SA et SB sont électriquement isolées l'une de l'autre.From equation (3) above, it appears that each nanotube is a high quality factor band-pass filtering element. In the context of the invention, the filtering properties of the nanotubes are used to modulate the conductive surfaces. Thus, at the resonant frequency F R of the nanotubes, the assembly consisting of the surface plane element SA, of the set of nanotubes distributed over the surface SAB and of the surface conducting strip SB is it equivalent to a single conductive surface equal to the sum SA + SAB + SB, whereas at the frequencies located on either side of the resonant frequency, the surfaces SA and SB are electrically isolated from each other.

De façon plus générale, deux surfaces conductrices coplanaires voisines, reliées entre elles de bord en bord par un ensemble de nanostructures unidimensionnelles verticales, se comportent comme une surface conductrice unique à la fréquence de résonance des nanostructures, et comme deux surfaces séparées aux autres fréquences.More generally, two adjacent coplanar conductive surfaces, interconnected from edge to edge by a set of vertical one-dimensional nanostructures, behave as a single conductive surface at the resonant frequency nanostructures, and as two separate surfaces at the other frequencies.

On notera que les nanostructures divulguées dans la demande de brevet internationale WO 02/080361 sont posées sur une surface conductrice. Cette surface conductrice tend à réduire fortement, voire à annuler, la fonction de filtrage des nanostructures. Au contraire, dans la présente invention, les nanostructures sont posées directement sur un substrat diélectrique.It will be noted that the nanostructures disclosed in the international patent application WO 02/080361 are laid on a conductive surface. This conductive surface tends to strongly reduce, or even cancel, the filtering function of the nanostructures. In contrast, in the present invention, the nanostructures are laid directly on a dielectric substrate.

Une particularité avantageuse du filtre de nanostructures unidimensionnelles est de permettre une propagation des courants de façon omnidirectionnelle et délocalisée, c'est à dire sur toute la longueur du côté commun aux deux surfaces conductrices, sans introduire de discontinuité dans la géométrie des conducteurs.An advantageous feature of the unidimensional nanostructure filter is that it allows the currents to propagate in an omnidirectional and delocalized manner, ie over the entire length of the side common to the two conductive surfaces, without introducing any discontinuity in the geometry of the conductors.

Les mouvements de charges électriques dans la surface conductrice sont donc possibles, dans chacune des surfaces séparées, à toutes les fréquences sauf à la fréquence de résonance des nanostructures, et, dans les deux surfaces, comme si elles n'en faisaient qu'une seule à la fréquence de résonance des nanostructures.The movements of electric charges in the conducting surface are therefore possible, in each of the separated surfaces, at all the frequencies except at the resonance frequency of the nanostructures, and in both surfaces, as if they were only one. at the resonance frequency of the nanostructures.

En particulier, si une des surfaces n'est reliée à un élément conducteur que par un joint de nanostructures unidimensionnelles (c'est le cas, par exemple, de la surface SB sur les figures 3a et 3b), elle se comporte comme électriquement flottante pour toutes les fréquences autres que la fréquence de résonance des nanostructures, et comme électriquement connectée à l'élément conducteur à la fréquence de résonance.In particular, if one of the surfaces is connected to a conductive element only by a joint of one-dimensional nanostructures (this is the case, for example, of the surface SB in FIGS. 3a and 3b), it behaves as electrically floating. for all frequencies other than the resonance frequency of the nanostructures, and as electrically connected to the conductive element at the resonant frequency.

Dans l'exemple donné aux figures 3a et 3b, le substrat diélectrique F est recouvert sur une deuxième face, opposée à la première face, d'un plan conducteur M. La structure conductrice illustrée sur les figures 3a et 3b est en conséquence un condensateur dont la capacité varie en fonction de la fréquence.In the example given in FIGS. 3a and 3b, the dielectric substrate F is covered on a second face, opposite the first face, by a conductive plane M. The conductive structure illustrated in FIGS. 3a and 3b is consequently a capacitor whose capacity varies according to the frequency.

Selon l'invention, il est également possible de réaliser des filtres de nanostructures unidimensionnelles à différentes fréquences de résonance entre des éléments conducteurs. La figure 4 illustre ce type d'exemple. Une première armature métallique de surface S1 est placée entre une deuxième armature métallique de surface S2 et une troisième armature métallique de surface S3. Un espace de largeur 12 sépare les première et deuxième armatures et un espace de largeur 13 sépare les deuxième et troisième armatures. Des nanostructures verticales NT sont uniformément réparties dans les espaces qui séparent les armatures. La fréquence de résonance du premier ensemble de nanostructures est réglée à une première fréquence FR1 et la fréquence de résonance du deuxième ensemble de est réglée à une deuxième fréquence de résonance FR2. Il s'en suit:

  • que les surfaces conductrices S1 et S2 sont électriquement reliées entre elles à la fréquence FR1, et
  • que les surfaces conductrices S1 et S3 sont électriquement reliées entre elles à la fréquence FR2.
According to the invention, it is also possible to produce unidimensional nanostructure filters at different resonant frequencies between conductive elements. Figure 4 illustrates this type of example. A first metal surface reinforcement S1 is placed between a second metal surface frame S2 and a third metal surface frame S3. A space of width 12 separates the first and second armatures and a space of width 13 separates the second and third armatures. NT vertical nanostructures are uniformly distributed in the spaces separating the reinforcements. The resonant frequency of the first set of nanostructures is set to a first frequency F R1 and the resonance frequency of the second set of is set to a second resonance frequency F R2 . It follows:
  • that the conductive surfaces S1 and S2 are electrically connected to each other at the frequency F R1 , and
  • that the conductive surfaces S1 and S3 are electrically connected to each other at the frequency F R2 .

Aux fréquences autres que les fréquences FR1 et FR2, les trois surfaces S1, S2, S3 sont électriquement isolées les unes des autres.At frequencies other than the frequencies F R1 and F R2 , the three surfaces S1, S2, S3 are electrically isolated from each other.

La figure 5 représente une vue de dessus d'un premier exemple de plan de masse d'antenne bi-bande selon l'invention. Un ensemble de motifs élémentaires sont régulièrement répartis sur la première face du substrat S. Un motif élémentaire est constitué d'un pavé conducteur p1, entouré par un ensemble de nanostructures unidimensionnelles verticales NT, lequel ensemble de nanostructures verticales NT est lui-même entouré par une bande conductrice b1. Le pavé conducteur p1, l'ensemble de nanostructures verticales NT et la bande b1 ont, par exemple, une géométrie hexagonale. Le pavé conducteur p1 est électriquement relié, par un trou métallisé V, à un plan conducteur P situé sur une deuxième face du substrat opposée de la première face (non représenté sur la figure).FIG. 5 represents a view from above of a first example of a dual band antenna ground plane according to the invention. A set of elementary patterns are regularly distributed on the first face of the substrate S. An elementary pattern consists of a conductive pad p1, surrounded by a set of vertical one-dimensional nanostructures NT, which set of vertical nanostructures NT is itself surrounded by a conductive strip b1. The conductive pad p1, the set of vertical nanostructures NT and the band b1 have, for example, a hexagonal geometry. The conductive pad p1 is electrically connected, by a metallized hole V, to a conductive plane P located on a second face of the opposite substrate of the first face (not shown in the figure).

Aux fréquences d'utilisation différentes de la fréquence de résonance des nanostructures, les bandes b1 sont électriquement isolées des pavés p1 et, en conséquence, seuls les pavés p1 contribuent à la conduction dans le plan de masse d'antenne. Par contre, à la fréquence de résonance des nanotubes, la bande b1 et le pavé p1 de chaque motif élémentaire sont électriquement reliés entre eux. Ce sont alors les pavés p1, les nanostructures NT et les bandes b1 qui contribuent au plan de masse d'antenne. On peut ainsi réaliser un plan de masse qui présente une haute impédance à deux fréquences de porteuses différentes, une des deux fréquences de porteuse étant la fréquence de résonance des nanostructures. Le plan de masse haute impédance est alors avantageusement un plan de masse bi-bande sans commutation de bande.At frequencies of use different from the resonance frequency of the nanostructures, the bands b1 are electrically isolated from the blocks p1 and, consequently, only the blocks p1 contribute to the conduction in the antenna ground plane. On the other hand, at the resonance frequency of the nanotubes, the band b1 and the block p1 of each elementary pattern are electrically connected to each other. It is then the p1 blocks, the NT nanostructures and the b1 bands that contribute to the antenna ground plane. It is thus possible to produce a ground plane which has a high impedance at two frequencies of different carriers, one of the two carrier frequencies being the frequency resonance of nanostructures. The high impedance ground plane is then advantageously a dual-band ground plane without band switching.

Les principaux avantages d'un plan de masse d'antenne à nanostructures unidimensionnelles peuvent s'énumérer comme suit:

  • le plan de masse haute impédance peut-être multi-bandes sans commutation physique,
  • aucune électrode de commande n'est nécessaire pour la commutation,
  • les fréquences de résonance sont définies par la géométrie des motifs et/ou une polarisation continue,
  • pas de report de MEMS (MEMS pour "Micro ElectroMechanical System").
The main advantages of a one-dimensional nanostructure antenna ground plane can be listed as follows:
  • the high impedance ground plane can be multi-band without physical commutation,
  • no control electrode is needed for switching,
  • the resonance frequencies are defined by the geometry of the patterns and / or a continuous polarization,
  • no MEMS report (MEMS for "Micro ElectroMechanical System").

Les figures 6a et 6b représentent un deuxième exemple de plan de masse d'antenne bi-bande selon l'invention. Ce deuxième exemple correspond, dans le cadre de l'invention, au plan de masse bi-bande représenté en figure 2, dans le cadre de l'art antérieur. Les pavés conducteurs sont alors situés dans deux plans parallèles P1 et P2 séparés par une distance D. La différence entre le plan de masse bi-bande de l'invention et le plan de masse bi-bande de l'art antérieur consiste en ce que la surface conductrice des pavés m2 situés dans le plan P2 varie en fonction de la fréquence. Un pavé m2 est en effet constitué d'un élément plan électriquement conducteur m2a entouré par une bande plane électriquement conductrice m2b, l'espace qui sépare la bande m2b de l'élément plan m2a étant empli de nanostructures unidimensionnelles verticales NT. A la fréquence de résonance des nanostructures NT, la surface d'un pavé m2 est ainsi la somme de la surface de l'élément m2a, de la bande m2b et de l'espace empli de nanotubes NT qui sépare l'élément m2a de la bande m2b. Par contre, aux fréquences autres que la fréquence de résonance des nanostructures, la surface d'un pavé m2 est la surface du seul élément m2a, la bande m2b étant électriquement isolée du reste du circuit.FIGS. 6a and 6b show a second example of a dual band antenna ground plane according to the invention. This second example corresponds, in the context of the invention, to the dual-band ground plane shown in FIG. 2, in the context of the prior art. The conductive blocks are then located in two parallel planes P1 and P2 separated by a distance D. The difference between the dual-band ground plane of the invention and the dual-band ground plane of the prior art is that the conductive surface of the blocks m2 located in the plane P2 varies according to the frequency. A square m2 is in fact composed of an electrically conductive plane element m2a surrounded by an electrically conductive flat strip m2b, the space separating the strip m2b from the plane element m2a being filled with one-dimensional vertical nanostructures NT. At the resonant frequency of NT nanostructures, the surface of a m2 block is thus the sum of the surface of the m2a element, the m2b band and the space filled with NT nanotubes which separates the m2a element from the m2b band. On the other hand, at frequencies other than the resonant frequency of the nanostructures, the area of a square block m2 is the area of the single element m2a, the band m2b being electrically isolated from the rest of the circuit.

Les figures 7 - 16 illustrent un exemple de procédé de fabrication de nanotubes.Figures 7 - 16 illustrate an example of a method of manufacturing nanotubes.

La figure 7 illustre la formation d'une couche de métal ou de conducteur électrique 2 sur un substrat diélectrique 1. Le substrat diélectrique 1 est choisi en fonction des performances électriques souhaitées. Ainsi, le substrat 1 est-il, préférentiellement, de l'alumine (SiO2) pour des fréquences d'utilisation de l'ordre de quelques Gigahertzs. D'autres matériaux peuvent cependant être utilisés tels que, par exemple, le saphir, le quartz, l'oxyde de béryllium, le dioxyde de titane, le verre. Le matériau qui constitue la couche de conducteur électrique 2 est, par exemple, l'argent, le cuivre, l'or, l'aluminium, le niobium, le molybdène, le chrome, le titane, le tantale.FIG. 7 illustrates the formation of a layer of metal or electrical conductor 2 on a dielectric substrate 1. The dielectric substrate 1 is chosen as a function of the desired electrical performance. Thus, the substrate 1 is it, preferably, alumina (SiO 2 ) for use frequencies of the order of a few Gigahertz. Other materials can however be used such as, for example, sapphire, quartz, beryllium oxide, titanium dioxide, glass. The material that constitutes the electrical conductor layer 2 is, for example, silver, copper, gold, aluminum, niobium, molybdenum, chromium, titanium, tantalum.

La formation de la couche conductrice 2 est suivie du dépôt d'une couche de résine 3 sur la couche conductrice 2, puis, d'une gravure de la couche de résine 3 (figure 8) suivie d'une gravure de la couche conductrice 2 (figure 9). Les gravures de la couche de résine 3 et de la couche conductrice 2 conduisent à dégager une surface E du substrat diélectrique 1 sur laquelle les nanostructures unidimensionnelles vont être formées (cf. figure 9).The formation of the conductive layer 2 is followed by the deposition of a resin layer 3 on the conductive layer 2, then an etching of the resin layer 3 (FIG. 8) followed by etching of the conductive layer 2 (Figure 9). The etchings of the resin layer 3 and the conductive layer 2 lead to a surface E of the dielectric substrate 1 which one-dimensional nanostructures will be formed (see Figure 9).

A la gravure de la couche conductrice 2 succède le dépôt d'une couche de résine 4 (cf. figure 10). Le dépôt de la couche de résine 4 est suivi par une étape de définition d'une zone Z dans laquelle les nanostructures unidimensionnelles vont croître (cf. figures 11 et 12). La définition de la zone Z peut se faire, par exemple, de deux manières différentes :

  • par autoalignement en illuminant à l'aide d'un rayonnement ultraviolet R le substrat par sa face arrière (cf. figure 11, le substrat doit alors être transparent aux fréquences de ultraviolet), ou
  • à l'aide d'un masque (non représenté sur les figures).
The etching of the conductive layer 2 is followed by the deposition of a resin layer 4 (see FIG. The deposition of the resin layer 4 is followed by a step of defining a zone Z in which the unidimensional nanostructures will grow (see FIGS. 11 and 12). The definition of the zone Z can be done, for example, in two different ways:
  • by self-alignment by illuminating with ultraviolet radiation R the substrate by its rear face (see Figure 11, the substrate must then be transparent at ultraviolet frequencies), or
  • using a mask (not shown in the figures).

La zone Z une fois définie est gravée (cf. figure 12) et un catalyseur 6 est déposé sur la couche de résine 4 et sur la surface E (cf. figure 13). Le catalyseur 6 peut être, par exemple, du Fe/Co, du Nickel, ou du Fe/Si, déposé par évaporation ou par pulvérisation sur une épaisseur pouvant varier, par exemple, de 1nm à 100nm.The zone Z once defined is etched (see FIG. 12) and a catalyst 6 is deposited on the resin layer 4 and on the surface E (FIG. The catalyst 6 may be, for example, Fe / Co, Nickel, or Fe / Si, deposited by evaporation or by spraying to a thickness that may vary, for example, from 1 nm to 100 nm.

Un retrait de la résine 4 est alors effectué de sorte que le catalyseur 6 ne soit plus présent que sur la surface E (cf. figure 14).A withdrawal of the resin 4 is then carried out so that the catalyst 6 is only present on the surface E (see Figure 14).

Le catalyseur 6 est ensuite configuré en une multiplicité de plots plt. Les plots plt sont obtenus, par exemple, à l'aide de techniques de lithographie fine qui permettent l'obtention d'un réseau régulier de plots ou à l'aide de techniques de coalescence thermique qui permettent l'obtention de plots dont la taille est répartie selon une distribution moyenne autour d'une valeur ciblée (cf. figure 15). Les plots plt sont, par exemple, des éléments cylindriques de quelques nanomètres de diamètre.Catalyst 6 is then configured into a multiplicity of plots. Plt plots are obtained, for example, using fine lithography techniques that allow obtaining a regular network of studs or using thermal coalescence techniques that allow to obtain studs whose size is distributed in a mean distribution around a target value (see Figure 15). Plt plots are, for example, cylindrical elements of a few nanometers in diameter.

Les nanostructures unidimensionnelles NT sont ensuite réalisées in situ, par dépôt chimique en phase vapeur assisté par plasma, plus communément appelé dépôt PECVD (PECVD pour "Plasma Enhanced Chemical Vapor Deposition"). Le dépôt PECVD est, par exemple, un dépôt de carbone en phase vapeur. Les nanostructures NT croissent alors naturellement, de façon unidimensionnelle, à partir des plots plt (cf. figure 16). Le diamètre des plots détermine celui des nanostructures (ils sont sensiblement égaux). Au plus le dépôt PECVD dure, au plus les nanostructures sont longues. De façon préférentielle, l'extrémité haute des nanostructures est positionnée sensiblement au niveau de la surface de la couche conductrice 2. En effet, la vibration des nanostructures est provoquée par le champ électromagnétique lié au déplacement des électrons dans le plan conducteur 2. La vibration est maximale quand le champ est maximal, c'est-à-dire lorsque le centre d'oscillation des nanostructures est positionné, en hauteur, sensiblement au milieu de l'épaisseur de la couche conductrice 2.The one-dimensional NT nanostructures are then produced in situ, by plasma-assisted chemical vapor deposition, more commonly known as PECVD ("Plasma Enhanced Chemical Vapor Deposition"). The PECVD deposit is, for example, a vapor phase carbon deposit. The NT nanostructures then grow naturally, unidimensionally, from the plots plt (Figure 16). The diameter of the studs determines that of the nanostructures (they are substantially equal). At most the PECVD deposit lasts, the longer the nanostructures are. Preferably, the upper end of the nanostructures is positioned substantially at the surface of the conductive layer 2. In fact, the vibration of the nanostructures is caused by the electromagnetic field related to the displacement of the electrons in the conductive plane 2. The vibration is maximal when the field is maximum, that is to say when the center of oscillation of the nanostructures is positioned, in height, substantially in the middle of the thickness of the conductive layer 2.

Dans le procédé décrit ci-dessus, le substrat 1 présente une surface à un seul niveau sur lequel sont placés la couche conductrice 2 et les nanostructures NT (cf. figure 16). Selon d'autres modes de réalisation, la zone du substrat 1 sur laquelle sont placées les nanostructures n'est pas au même niveau que celle où est placée la couche conductrice 2. Le substrat 1 est alors soit rehaussé (cf. figure 17) soit abaissé (cf. figure 18) sous les nanostructures. Dans le cas d'un substrat rehaussé, le substrat 1 est sélectivement gravé là où la couche conductrice 2 est destinée à être déposée. Dans le cas d'un substrat abaissé, c'est la zone où les nanotubes sont placés qui est préalablement gravée sélectivement.In the method described above, the substrate 1 has a single-level surface on which the conductive layer 2 and the NT nanostructures are placed (see FIG. According to other embodiments, the zone of the substrate 1 on which the nanostructures are placed is not at the same level as that where is placed conductive layer 2. The substrate 1 is then either raised (Figure 17) or lowered (see Figure 18) under the nanostructures. In the case of an enhanced substrate, the substrate 1 is selectively etched where the conductive layer 2 is intended to be deposited. In the case of a lowered substrate, it is the area where the nanotubes are placed which is previously selectively etched.

Claims (7)

Structure conductrice comprenant au moins une première couche conductrice plane déposée sur une première face d'un substrat diélectrique, la première couche conductrice plane étant munie d'au moins un bord, caractérisée en ce qu'elle comprend : - au moins une deuxième couche conductrice plane déposée sur la première face du substrat diélectrique, la deuxième couche conductrice plane étant munie d'au moins un bord en regard du bord de la première couche conductrice plane, et - un ensemble de nanostructures unidimensionnelles (NT) ayant une fréquence de résonance (FR), les nanostructures unidimensionnelles ayant un axe sensiblement perpendiculaire au plan des première et deuxième couches conductrices et étant réparties, sur le substrat diélectrique, entre le bord de la première couche conductrice plane et le bord de la deuxième couche conductrice plane. Conductive structure comprising at least a first planar conducting layer deposited on a first face of a dielectric substrate, the first planar conductive layer being provided with at least one edge, characterized in that it comprises: at least one second planar conductive layer deposited on the first face of the dielectric substrate, the second flat conductive layer being provided with at least one edge facing the edge of the first flat conductive layer, and a set of one-dimensional nanostructures (NT) having a resonance frequency (F R ), the one-dimensional nanostructures having an axis substantially perpendicular to the plane of the first and second conductive layers and being distributed, on the dielectric substrate, between the edge of the first plane conductive layer and the edge of the second conductive flat layer. Structure conductrice selon la revendication 1, dans laquelle la deuxième couche conductrice plane entoure complètement la première couche conductrice plane.The conductive structure of claim 1, wherein the second planar conductive layer completely surrounds the first planar conductive layer. Structure conductrice selon l'une des revendications 1 ou 2, dans laquelle une deuxième face du substrat diélectrique, opposée à la première face, est recouverte d'un plan conducteur.Conductive structure according to one of claims 1 or 2, wherein a second face of the dielectric substrate, opposite the first face, is covered with a conductive plane. Structure conductrice selon l'une des revendications 1 à 3, dans laquelle les nanostructures unidimensionnelles sont des nanotubes de carbone.Conductive structure according to one of claims 1 to 3, wherein the one-dimensional nanostructures are carbon nanotubes. Plan de masse multi-bandes pour antenne comprenant un substrat diélectrique (S) recouvert, sur une première face, d'un ensemble de motifs conducteurs plans (p1, m2a) et, sur une deuxième face, opposée à la première face, d'un plan conducteur (P), les motifs conducteurs plans (p1, m2a) étant reliés au plan conducteur (P) par l'intermédiaire de trous métallisés (V) qui traversent le substrat diélectrique (S), caractérisé en ce qu'un motif conducteur plan supplémentaire (b1, m2b) entoure complètement chaque motif conducteur plan (p1, m2a), le motif conducteur plan supplémentaire étant séparé, par un espace, du motif conducteur plan qu'il entoure, et en ce que des nanostructures unidimensionnelles (NT) ayant une fréquence de résonance sont réparties, sur le substrat diélectrique, dans l'espace qui sépare le motif conducteur plan (p1, m2a) du motif conducteur supplémentaire (b1, m2b), les nanostructures unidimensionnelles (NT) ayant un axe sensiblement perpendiculaire au plan des motifs conducteurs plans.Antenna multi-band ground plane comprising a dielectric substrate (S) covered, on a first face, with a set of plane conductive patterns (p1, m2a) and, on a second face, opposite to the first face, of a conductive plane (P), the plane conductor patterns (p1, m2a) being connected to the conductive plane (P) via metallized holes (V) which pass through the dielectric substrate (S), characterized in that a pattern additional plane conductor (b1, m2b) completely surrounds each plane conductive pattern (p1, m2a), the additional plane conductive pattern being separated, by a gap, from the plane conductive pattern that it surrounds, and in that unidimensional nanostructures (NT ) having a resonant frequency are distributed, on the dielectric substrate, in the space separating the plane conductive pattern (p1, m2a) from the additional conductive pattern (b1, m2b), the one-dimensional nanostructures (NT) having a substantially perpendicular axis planar plane pattern area. Plan de masse multi-bandes selon la revendication 5, dans lequel les nanostructures unidimensionnelles sont des nanotubes de carbone.A multi-band ground plane according to claim 5, wherein the one-dimensional nanostructures are carbon nanotubes. Plan de masse multi-bandes selon l'une des revendications 5 ou 6, caractérisé en ce que des pavés électriquement conducteurs (m1) sont présents, dans l'épaisseur du substrat diélectrique, dans un plan (P1) parallèle aux plans des première et deuxième faces du substrat diélectrique et situé entre lesdits plans des première et deuxième faces, au moins une fraction d'un motif conducteur plan supplémentaire (m2a) étant en regard d'au moins une fraction d'au moins un pavé électriquement conducteur (m1), un trou métallisé reliant chaque pavé électriquement conducteur (m1) au plan conducteur (P) situé sur la deuxième face du substrat diélectrique.Multi-band ground plane according to one of Claims 5 or 6, characterized in that paving stones electrically conductive (m1) are present in the thickness of the dielectric substrate in a plane (P1) parallel to the planes of the first and second faces of the dielectric substrate and located between said planes of the first and second faces, at least a fraction of an additional plane conductive pattern (m2a) facing at least a fraction of at least one electrically conductive pad (m1), a metallized hole connecting each electrically conductive pad (m1) to the conductive pad (P) on the second pad face of the dielectric substrate.
EP06121114A 2005-09-26 2006-09-22 Variable frequency conductive structure Not-in-force EP1768212B1 (en)

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EP2248258A1 (en) * 2008-02-29 2010-11-10 Nokia Corporation Apparatus, method, and computer program product providing edgeless nanotube resonator arrays

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US20020197752A1 (en) * 1999-05-24 2002-12-26 Choi Won-Bong Carbon nanotube field emission array and method for fabricating the same
US20050063658A1 (en) * 1997-01-16 2005-03-24 Crowley Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification

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US20050063658A1 (en) * 1997-01-16 2005-03-24 Crowley Robert Joseph Optical antenna array for harmonic generation, mixing and signal amplification
US20020197752A1 (en) * 1999-05-24 2002-12-26 Choi Won-Bong Carbon nanotube field emission array and method for fabricating the same
WO2002080361A1 (en) * 2001-03-30 2002-10-10 California Institute Of Technology Carbon nanotube array rf filter

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EP2248258A4 (en) * 2008-02-29 2013-06-05 Nokia Corp Apparatus, method, and computer program product providing edgeless nanotube resonator arrays

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DE602006000856T2 (en) 2009-05-07

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