EP1964204B1 - Module with frequency-tunable function - Google Patents

Module with frequency-tunable function Download PDF

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Publication number
EP1964204B1
EP1964204B1 EP06830197A EP06830197A EP1964204B1 EP 1964204 B1 EP1964204 B1 EP 1964204B1 EP 06830197 A EP06830197 A EP 06830197A EP 06830197 A EP06830197 A EP 06830197A EP 1964204 B1 EP1964204 B1 EP 1964204B1
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European Patent Office
Prior art keywords
function
electronic box
box according
membrane
substrate
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EP06830197A
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German (de)
French (fr)
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EP1964204A1 (en
Inventor
François BARON
Corinne Nicolas
Dominique Lo Hine Tong
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Thomson Licensing SAS
Thomson Licensing LLC
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Thomson Licensing SAS
Thomson Licensing LLC
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters

Definitions

  • the field of the invention is that of electronic components, integrated in micro-machined structures, particularly interesting especially for microwave component applications for which low losses are required.
  • Micromachining technology allows the realization of active or passive structures whose dimensions and weight are greatly reduced compared to more conventional technologies, such as printed circuits, while reducing the cost and significantly improving the performance at millimeter frequencies.
  • the ability of this technique to integrate functionalities in 3 dimensions makes it possible to increase the integration density of the circuits. It also offers the possibility of integrating, within these micro-machined structures, multi-function systems of high level in a single planar technology. For example, the integration of active components flip-chip or wired is quite possible with this type of technology.
  • MEMS Micro Electronic Memory System
  • Micro-machined circuits do not require special encapsulation, that is to say that they do not need external housings or supports, since the protection of the circuits is carried out naturally by the shielding of the structures.
  • micro-machining technology makes it possible to etch conductors on a very thin membrane (approximately 10 ⁇ m) and to encapsulate the entire structure in a solid substrate. It can be applied to any type of semiconductor substrate, but the use of silicon makes it possible to reduce the manufacturing costs more significantly, this substrate being widely used in the semiconductor industry.
  • modules comprising micromachined structures comprising frequency tunable functions such as that illustrated in FIG. figure 1 .
  • An engraved signal line L s and an associated ground plane PM s are defined on the surface of a substrate 1 and encapsulated in a micromachined structure defined by the substrate and a support 2, typically obtained by machining a workpiece. silicon.
  • This is a so-called triplate structure defined by three ground plane levels: PM 1 , PM s and PM 2 , the ground planes PM 1 and PM 2 providing the electromagnetic shielding of the assembly comprising a cavity 3.
  • the presence of the mass substrate represents a disadvantage in this type of structure, on the one hand because of the high permittivity of the materials conventionally used as substrate and on the other hand by the non-tunability of their dielectric properties in frequency.
  • the present invention proposes a new electronic box comprising a substrate, a frequency-tunable function, a dielectric material with variable permittivity with a electrical excitation in contact with said function and a support secured to the substrate so as to define the housing, characterized in that the substrate comprises a membrane supporting the tunable function, said membrane being between an upper cavity and a lower cavity of the housing, least one cavity being filled with the dielectric material.
  • the dielectric material with variable permittivity may comprise a liquid crystal. It may be a homogeneous material or a composite material comprising a polymer and liquid crystal dispersed in the polymer.
  • the substrate comprises a first part made of semiconductor material having a locally machined surface, a second part comprising a membrane supported by a semiconductor material having a locally machined surface, said first part and second part being assembled, the machined surfaces facing each other, the lower cavity being defined between these machined surfaces and the membrane.
  • the support comprises a third portion of locally machined semiconductor material, the upper cavity being defined between said machined surface and the membrane.
  • one or both cavities are filled with at least one material comprising liquid crystal.
  • the function can be of filter type, delay line, phase shifter, ...
  • the function comprises a signal line and an associated ground plane.
  • the lower face of the upper cavity and the upper face of the lower cavity each comprise a ground plane for the signal, to ensure the electromagnetic shielding of the housing with respect to the frequency tunable function.
  • ground plane in the present case is relative to the frequency band of the useful signal, the mass for the DC voltages being able to be different.
  • the machined surfaces of the semiconductor substrates are metallized to form ground planes.
  • the means for frequency tuning the function consist of an electric field applied either between the structure etched on the membrane on the one hand and at least one of the ground planes on the other hand, either between the two ground planes which are in this case isolated from a continuous signal point of view.
  • the housing may be silicon, the membrane being made of silica or silicon nitride material or a combination of both, or else benzocyclobutene.
  • the function and / or the ground planes are made of metal. It can include gold
  • the dielectric material may comprise liquid crystal.
  • the filling of material comprising liquid crystal is performed by injection.
  • the machined surfaces of the first, second and third substrates are metallized.
  • the substrates are made of silicon.
  • the substrates can be machined by photolithography.
  • the electronic unit proposed in the present invention generally comprises two cavities delimited by a membrane on which at least one component, also called a function that is sought to be tunable in frequency, is formed, as illustrated in FIG. figure 2 which represents a sectional view of an exemplary housing according to the invention.
  • the housing is defined by a first portion or support 11 and a second portion 12 also called substrate, separated by a membrane 13 on which the function is performed, in the case shown a microstrip line L s .
  • Two upper and lower cavities 14 and 14 are thus defined on either side of the membrane 13. At least one of these two cavities is filled with dielectric material with permittivity tunable in frequency, advantageously the 2 can be, as represented in the present case by hatching relative to the dielectric material.
  • the structure thus produced comprises three levels of ground plane: PM s , PM 11 and PM 12 .
  • filling is carried out by a fluid liquid crystal material.
  • This filling operation can be performed by injection using openings in the cover and which allow the passage of microwave access to connect the frequency tunable function.
  • the voltage control of the liquid crystal can be done in different ways.
  • the Figures 4a and 4b illustrate possible electrical assemblies. So the figure 4a illustrates a configuration in which a radio-frequency RF voltage and a DC voltage Vdc are applied to the structure etched on the membrane at the micro-ribbon line L s .
  • the figure 4b illustrates another possible configuration in which the direct control voltage of the liquid crystal is applied between the ground plane elements PM 11 and PM 12 surrounding the microstrip line.
  • the function is a 3-pole filter as illustrated in figure 5 which illustrates a view from above showing the metallizations constituting the L 1 and L 2 output lines, the resonators R 1 , R 2 and R 3 , associated signal ground planes PM s .
  • Other functions such as delay lines, phase shifters or the like can also be realized.
  • the cavities are filled with the commercial nematic liquid crystal K15 from Merck whose relative permittivity can vary between 2.9 and 3.1.
  • the relative variation of the central frequency obtained is equal to ⁇ r ⁇ 2 / ⁇ r ⁇ 1 here 1 GHz to 30 GHz. And as the curves of the figure 6 , the level of adaptation, around -30dB, is perfectly preserved.

Abstract

The invention relates to an electronic module comprising a substrate (12), a frequency-tunable function on the surface of said substrate, a dielectric having a variable permittivity with electrical excitation in contact with said function, and a support (11) attached to the substrate so as to define the module, characterized in that the substrate includes a membrane (13), said membrane lying between an upper cavity (14) and a lower cavity (15) of the module, at least one cavity being filled with the dielectric, which may be a liquid crystal. The presence of two cavities, at least one of which is filled with a dielectric having a variable permittivity, makes it possible to increase the operating frequency range of the function.

Description

Le domaine de l'invention est celui des composants électroniques, intégrés dans des structures micro-usinés, particulièrement intéressants notamment pour des applications composants micro-onde pour lesquelles de faibles pertes sont demandées.The field of the invention is that of electronic components, integrated in micro-machined structures, particularly interesting especially for microwave component applications for which low losses are required.

La technologie de micro-usinage permet la réalisation de structures actives ou passives dont les dimensions et le poids sont fortement réduits par rapport aux technologies plus classiques, comme les circuits imprimés, tout en diminuant le coût et en améliorant notablement les performances aux fréquences millimétriques. En particulier, la capacité de cette technique à intégrer des fonctionnalités en 3 dimensions permet d'augmenter la densité d'intégration des circuits. Elle offre également la possibilité d'intégrer, à l'intérieur même de ces structures micro-usinées, des systèmes multi-fonctions de haut niveau dans une seule technologie planaire. Par exemple, l'intégration de composants actifs en flip-chip ou en filaire est tout à fait envisageable avec ce type de technologie.Micromachining technology allows the realization of active or passive structures whose dimensions and weight are greatly reduced compared to more conventional technologies, such as printed circuits, while reducing the cost and significantly improving the performance at millimeter frequencies. In particular, the ability of this technique to integrate functionalities in 3 dimensions makes it possible to increase the integration density of the circuits. It also offers the possibility of integrating, within these micro-machined structures, multi-function systems of high level in a single planar technology. For example, the integration of active components flip-chip or wired is quite possible with this type of technology.

Elle permet aussi d'intégrer facilement des composants passifs micro-usinés en remplacement de composants discrets, qui souvent imposent des études d'intégration complexes et par conséquent onéreuses. De plus, cette technologie a l'avantage de permettre l'intégration directe de composants MEMS (Micro Electronic Memory System) et d'obtenir des systèmes très performants de 1 GHz à quelques THz, tout en réduisant les dimensions des structures finales.It also makes it easy to integrate micro-machined passive components to replace discrete components, which often require complex integration studies and therefore expensive. In addition, this technology has the advantage of allowing the direct integration of Micro Electronic Memory System (MEMS) components and obtaining high performance systems from 1 GHz to a few THz, while reducing the size of the final structures.

Les circuits micro-usinés ne nécessitent pas d'encapsulation particulière, c'est-à-dire qu'ils n'ont pas besoin de boîtiers ou de supports externes, puisque la protection des circuits est réalisée naturellement par le blindage des structures.Micro-machined circuits do not require special encapsulation, that is to say that they do not need external housings or supports, since the protection of the circuits is carried out naturally by the shielding of the structures.

La technologie de micro-usinage permet de graver des conducteurs sur une membrane très fine (environ 10µm) et d'encapsuler l'ensemble de la structure dans un substrat solide. Elle peut être appliquée à tout type de substrat semi-conducteur, mais l'utilisation du silicium permet de diminuer de manière plus sensible les coûts de fabrication, ce substrat étant largement employé dans l'industrie du semi-conducteur.The micro-machining technology makes it possible to etch conductors on a very thin membrane (approximately 10 μm) and to encapsulate the entire structure in a solid substrate. It can be applied to any type of semiconductor substrate, but the use of silicon makes it possible to reduce the manufacturing costs more significantly, this substrate being widely used in the semiconductor industry.

Il a notamment déjà été proposé des modules comportant des structures micro-usinées comprenant des fonctions accordables en fréquence telles que celle illustrée en figure 1. Une ligne signal gravée Ls et un plan de masse associé PMs sont définis à la surface d'un substrat 1 et encapsulés dans une structure micro-usinée définie par le substrat et un support 2, typiquement obtenu par usinage d'une pièce en silicium. Il s'agit d'une structure dite triplaque définie par trois niveaux de plan de masse : PM1, PMs et PM2 , les plans de masse PM1 et PM2 assurant le blindage électromagnétique de l'ensemble comportant une cavité 3.It has in particular already been proposed modules comprising micromachined structures comprising frequency tunable functions such as that illustrated in FIG. figure 1 . An engraved signal line L s and an associated ground plane PM s are defined on the surface of a substrate 1 and encapsulated in a micromachined structure defined by the substrate and a support 2, typically obtained by machining a workpiece. silicon. This is a so-called triplate structure defined by three ground plane levels: PM 1 , PM s and PM 2 , the ground planes PM 1 and PM 2 providing the electromagnetic shielding of the assembly comprising a cavity 3.

Il est par ailleurs connu de pouvoir réaliser des fonctions accordables en fréquence en utilisant des matériaux diélectriques dont les caractéristiques varient avec une excitation électrique.It is also known to be able to achieve frequency tunable functions using dielectric materials whose characteristics vary with electrical excitation.

Par exemple, l'utilisation de cristaux liquides permettant de réaliser des capacités ou des déphaseurs variables, mais aussi des filtres accordables a été décrite dans la littérature (" Tunable Passive Phase Shifter for Microwave Applications using Highly isotropic Liquid Crystals", WEIF-32, IEEE MTT-S Digest 2004, pp 1153-1156 , " Ferro-electric and Liquid Crystal Tunable Microwave Phase Shifters", 33rd European Microwave Conference - Munich 2003, pp 1431-1434 , " Improvement of an Inverted Microstrip Line-Based Microwave Tunable Phase-Shifter using Liquid Crystal", 33rd European Microwave Conference - Munich 2003, pp 1417-1420 , " Nouvelles structures de déphaseurs agiles en fréquence à substrat cristal liquide », 12èmes Journées Nationales Microondes, 16-17-18 mai 2001 - POITIERS, 6B1 )For example, the use of liquid crystals to achieve varying capacitances or phase shifters, but also tunable filters has been described in the literature (" Tunable Passive Phase Shifter for Microwave Applications using Highly Isotropic Liquid Crystals, WEIF-32, IEEE MTT-S Digest 2004, pp 1153-1156 , " Ferro-electric and Liquid Crystal Tunable Microwave Phase Shifters ", 33rd European Microwave Conference - Munich 2003, pp 1431-1434 , " Improvement of an Inverted Microstrip Line-Based Microwave Tunable Phase-Shifter Using Liquid Crystal ", 33rd European Microwave Conference - Munich 2003, pp 1417-1420 , " New Frequency Agile Phase Shifter Structures with Liquid Crystal Substrate ", 12th National Microwave Days, May 16-17-18, 2001 - POITIERS, 6B1 )

Pour rendre la fonction définie par la ligne signal et son plan de masse, accordable en fréquence, il a déjà été proposé de remplir la cavité 3 par un matériau, par exemple, de type cristal liquide dont la permittivité peut être commandée électriquement.To make the function defined by the signal line and its ground plane, tunable in frequency, it has already been proposed to fill the cavity 3 with a material, for example of the liquid crystal type whose permittivity can be electrically controlled.

Néanmoins, la présence du substrat massique représente un inconvénient dans ce type de structure, d'une part en raison de la permittivité élevée des matériaux classiquement employés comme substrat et d'autre part par la non accordabilité en fréquence de leurs propriétés diélectriques.Nevertheless, the presence of the mass substrate represents a disadvantage in this type of structure, on the one hand because of the high permittivity of the materials conventionally used as substrate and on the other hand by the non-tunability of their dielectric properties in frequency.

Dans ce contexte, la présente invention propose un nouveau boîtier électronique comportant un substrat, une fonction accordable en fréquence, un matériau diélectrique à permittivité variable avec une excitation électrique en contact avec ladite fonction et un support solidaire du substrat de manière à définir le boîtier, caractérisé en ce que le substrat comporte une membrane supportant la fonction accordable, ladite membrane étant comprise entre une cavité supérieure et une cavité inférieure du boîtier, au moins une cavité étant remplie par le matériau diélectrique.In this context, the present invention proposes a new electronic box comprising a substrate, a frequency-tunable function, a dielectric material with variable permittivity with a electrical excitation in contact with said function and a support secured to the substrate so as to define the housing, characterized in that the substrate comprises a membrane supporting the tunable function, said membrane being between an upper cavity and a lower cavity of the housing, least one cavity being filled with the dielectric material.

Avantageusement, le matériau diélectrique à permittivité variable peut comprendre un cristal liquide. Il peut s'agir d'un matériau homogène ou d'un matériau composite comportant un polymère et du cristal liquide dispersé dans le polymère.Advantageously, the dielectric material with variable permittivity may comprise a liquid crystal. It may be a homogeneous material or a composite material comprising a polymer and liquid crystal dispersed in the polymer.

Avantageusement, le substrat comporte une première partie en matériau semiconducteur présentant une surface localement usinée, une seconde partie comprenant une membrane supportée par un matériau semiconducteur comportant une surface localement usinée, lesdites première partie et seconde partie étant assemblées, les surfaces usinées étant en regard, la cavité inférieure étant définie entre ces surfaces usinées et la membrane.Advantageously, the substrate comprises a first part made of semiconductor material having a locally machined surface, a second part comprising a membrane supported by a semiconductor material having a locally machined surface, said first part and second part being assembled, the machined surfaces facing each other, the lower cavity being defined between these machined surfaces and the membrane.

Avantageusement, le support comporte une troisième partie en matériau semiconducteur localement usinée, la cavité supérieure étant définie entre ladite surface usinée et la membrane.Advantageously, the support comprises a third portion of locally machined semiconductor material, the upper cavity being defined between said machined surface and the membrane.

Avantageusement, l'une ou les deux cavités sont remplies d'au moins un matériau comprenant du cristal liquide.Advantageously, one or both cavities are filled with at least one material comprising liquid crystal.

Avantageusement, la fonction peut être de type filtre, ligne à retard, déphaseur, ...Advantageously, the function can be of filter type, delay line, phase shifter, ...

Avantageusement, la fonction comprend une ligne signal et un plan de masse associé.Advantageously, the function comprises a signal line and an associated ground plane.

Avantageusement, la face inférieure de la cavité supérieure et la face supérieure de la cavité inférieure comprennent chacune un plan de masse pour le signal, permettant d'assurer le blindage électromagnétique du boîtier vis à vis de la fonction accordable en fréquence. Il est à noter que la notion de plan de masse dans le cas présent est relative à la bande de fréquence du signal utile, la masse pour les tensions continues pouvant être différente.Advantageously, the lower face of the upper cavity and the upper face of the lower cavity each comprise a ground plane for the signal, to ensure the electromagnetic shielding of the housing with respect to the frequency tunable function. It should be noted that the concept of ground plane in the present case is relative to the frequency band of the useful signal, the mass for the DC voltages being able to be different.

Avantageusement, les surfaces usinées des substrats semiconducteurs sont métallisées pour constituer des plans de masse.Advantageously, the machined surfaces of the semiconductor substrates are metallized to form ground planes.

Selon une variante de l'invention, les moyens pour accorder en fréquence la fonction sont constitués par un champ électrique appliqué soit entre la structure gravée sur la membrane d'une part et au moins l'un des plans de masse d'autre part, soit entre les deux plans de masse qui sont dans ce cas isolés d'un point de vue signal continu.According to a variant of the invention, the means for frequency tuning the function consist of an electric field applied either between the structure etched on the membrane on the one hand and at least one of the ground planes on the other hand, either between the two ground planes which are in this case isolated from a continuous signal point of view.

Avantageusement, le boîtier peut-être en silicium, la membrane étant en matériau de type silice ou nitrure de silicium ou une combinaison des deux, ou bien encore en benzocyclobutene.Advantageously, the housing may be silicon, the membrane being made of silica or silicon nitride material or a combination of both, or else benzocyclobutene.

Avantageusement, la fonction et/ou les plans de masse sont en métal. Il peut notamment s'agir d'orAdvantageously, the function and / or the ground planes are made of metal. It can include gold

L'invention a aussi pour objet un procédé de fabrication d'un boîtier électronique selon l'invention comportant en outre les étapes suivantes :

  • la réalisation d'un premier substrat localement usiné
  • la réalisation d'une membrane comportant une fonction accordable en fréquence, supportée par un second substrat localement usiné
  • la réalisation d'un troisième substrat localement usiné
  • l'assemblage des trois substrats de manière à définir un boîtier comportant une cavité inférieure et une cavité supérieure de part et d'autre de la membrane.
  • le remplissage d' au moins une cavité par un matériau fluide comportant un matériau diélectrique à permittivité variable avec une excitation électrique.
The invention also relates to a method of manufacturing an electronic box according to the invention further comprising the following steps:
  • the production of a first locally machined substrate
  • the production of a membrane having a frequency-tunable function, supported by a second locally-machined substrate
  • the production of a third locally machined substrate
  • assembling the three substrates so as to define a housing having a lower cavity and an upper cavity on either side of the membrane.
  • filling at least one cavity with a fluid material having a variable permittivity dielectric material with electrical excitation.

Avantageusement, le matériau diélectrique peut comprendre du cristal liquide.Advantageously, the dielectric material may comprise liquid crystal.

Selon une variante de l'invention, le remplissage de matériau comportant du cristal liquide est effectué par injection.According to a variant of the invention, the filling of material comprising liquid crystal is performed by injection.

Selon une variante de l'invention, les surfaces usinées des premier, second et troisième substrats sont métallisées.According to a variant of the invention, the machined surfaces of the first, second and third substrates are metallized.

Avantageusement les substrats sont en silicium.Advantageously, the substrates are made of silicon.

Selon une variante de procédé selon l'invention, les substrats peuvent être usinés par photolithographie.According to an alternative method of the invention, the substrates can be machined by photolithography.

L'invention sera mieux comprise et d'autres avantages apparaîtront à la lecture de la description qui va suivre donnée à titre non limitatif et grâce aux figures annexées parmi lesquelles :

  • la figure 1 illustre un exemple de boîtier électronique comportant une fonction accordable en fréquence selon l'art connu
  • la figure 2 illustre un exemple de boîtier de l'invention, comportant deux cavités délimitées par une membrane
  • les figures 3a à 3c illustrent les étapes d'un procédé de fabrication du boîtier selon l'invention
  • les figures 4a et 4b illustrent deux exemples d'adressage de la fonction accordable en fréquence
  • la figure 5 illustre un exemple de filtre à 3 pôles réalisé à la surface de la membrane dans un boîtier selon l'invention
  • la figure 6 illustre les évolutions de l'adaptation et de la transmission en fonction de la fréquence pour différentes valeurs de permittivités ajustées par modification de la tension continue appliquée sur un cristal liquide utilisé dans un boîtier selon l'invention
The invention will be better understood and other advantages will become apparent on reading the description which follows given by way of non-limiting example and by virtue of the appended figures among which:
  • the figure 1 illustrates an example of an electronic box comprising a frequency-tunable function according to the prior art
  • the figure 2 illustrates an example of a housing of the invention, comprising two cavities delimited by a membrane
  • the Figures 3a to 3c illustrate the steps of a method of manufacturing the case according to the invention
  • the Figures 4a and 4b illustrate two examples of addressing the frequency tunable function
  • the figure 5 illustrates an example of a 3-pole filter made on the surface of the membrane in a housing according to the invention
  • the figure 6 illustrates the evolution of the adaptation and the transmission as a function of frequency for different values of permittivity adjusted by modification of the DC voltage applied to a liquid crystal used in a case according to the invention

Le boîtier électronique proposé dans la présente invention comporte de manière générale deux cavités délimitées par une membrane sur laquelle est réalisé au moins un composant encore appelé fonction que l'on cherche à rendre accordable en fréquence, comme illustré en figure 2 qui représente une vue en coupe d'un exemple de boîtier selon l'invention.The electronic unit proposed in the present invention generally comprises two cavities delimited by a membrane on which at least one component, also called a function that is sought to be tunable in frequency, is formed, as illustrated in FIG. figure 2 which represents a sectional view of an exemplary housing according to the invention.

Plus précisément le boîtier est défini par une première partie ou support 11 et une seconde partie 12 appelée aussi substrat, séparée par une membrane 13 sur laquelle est réalisée la fonction, dans le cas représenté une ligne micro-ruban Ls. Deux cavités supérieures 14 et inférieure 15 sont ainsi définies de part et d'autre de la membrane 13. Au moins l'une de ces deux cavités est remplie de matériau diélectrique à permittivité accordable en fréquence, avantageusement les 2 peuvent l'être, comme représenté dans le cas présent par des hachures relatives au matériau diélectrique. Par ailleurs, la structure ainsi réalisée comprend trois niveaux de plan de masse : PMs, PM11 et PM12.More specifically, the housing is defined by a first portion or support 11 and a second portion 12 also called substrate, separated by a membrane 13 on which the function is performed, in the case shown a microstrip line L s . Two upper and lower cavities 14 and 14 are thus defined on either side of the membrane 13. At least one of these two cavities is filled with dielectric material with permittivity tunable in frequency, advantageously the 2 can be, as represented in the present case by hatching relative to the dielectric material. Furthermore, the structure thus produced comprises three levels of ground plane: PM s , PM 11 and PM 12 .

Exemple de réalisation de boîtier comportant des cavités réalisées dans des substrats de silicium :Embodiment example of housing comprising cavities made in silicon substrates:

Nous allons décrire plus en détails la réalisation du boîtier à partir de plusieurs substrats de silicium :

  • On utilise un premier substrat S1 en silicium, sur lequel on réalise un masque par photolithographie de manière à pouvoir définir une zone destinée à la gravure. Après gravure, l'ensemble de la surface est métallisé, on obtient le substrat usiné tel que représenté en figure 3a et comprenant le plan de masse PM11
  • On utilise un second substrat S2 correspondant à un substrat silicium recouvert d'une couche d'oxyde en face supérieure comme représenté en figure 3b. A la place d'oxyde, d'autres matériaux peuvent être utilisés comme mentionné ci-dessus pour la membrane. On procède à l'usinage de cette pièce en face inférieure jusqu'à arrêt de gravure sur la couche d'oxyde formant ainsi la membrane destinée à recevoir la fonction accordable. On dépose donc sur la couche d'oxyde Co, en face supérieure, une ligne micro-ruban Ls destinée à constituée la fonction accordable en fréquence, ainsi qu'un plan de masse associé PMs, et en face arrière une autre métallisation PM20
  • On utilise un troisième substrat silicium S3 usiné et recouvert d'une couche métallique illustré en figure 3c de manière à réaliser un substrat similaire à celui illustré en figure 3a et comportant le plan de masse PM21.
  • Les trois substrats S1, S2 et S3 sont alors assemblés par brasage, collage ou thermo-compression. On définit ainsi le boîtier avec ses deux cavités et ses plans de masse permettant le blindage: PM11 et PM12 défini par les métallisations PM20 et PM21
We will describe in more detail the realization of the case from several silicon substrates:
  • A first silicon substrate S 1 is used , on which a mask is made by photolithography so as to define a zone intended for etching. After etching, the entire surface is metallized, the machined substrate is obtained as shown in FIG. figure 3a and including the ground plane PM 11
  • A second substrate S 2 corresponding to a silicon substrate coated with an oxide layer on the upper face is used as shown in FIG. figure 3b . In place of oxide, other materials may be used as mentioned above for the membrane. This part is machined on the lower face until etching stops on the oxide layer thus forming the membrane intended to receive the tunable function. Thus, on the upper oxide layer Co, a microstrip line L s intended to constitute the frequency-tunable function and an associated ground plane PM s is deposited, and another metallization PM on the rear face. 20
  • A third silicon substrate S 3 machined and covered with a metal layer illustrated in FIG. figure 3c to produce a substrate similar to that illustrated in figure 3a and having the ground plane PM 21 .
  • The three substrates S 1 , S 2 and S 3 are then assembled by brazing, gluing or thermo-compression. This defines the case with its two cavities and its ground planes allowing the shielding: PM 11 and PM 12 defined by the metallizations PM 20 and PM 21

Après réalisation du boîtier intégrant les deux cavités, on procède au remplissage par un matériau cristal liquide fluide. Cette opération de remplissage peut être effectuée par injection en utilisant des ouvertures aménagées dans le couvercle et qui permettent le passage des accès hyperfréquence, pour connecter la fonction accordable en fréquence.After completion of the housing incorporating the two cavities, filling is carried out by a fluid liquid crystal material. This filling operation can be performed by injection using openings in the cover and which allow the passage of microwave access to connect the frequency tunable function.

La commande en tension du cristal liquide peut être faite de différentes manières. Les figures 4a et 4b illustrent des montages électriques possibles. Ainsi la figure 4a illustre une configuration dans laquelle une tension radio-fréquence RF et une tension continue Vdc sont appliquées sur la structure gravée sur la membrane au niveau de la ligne micro-ruban Ls.The voltage control of the liquid crystal can be done in different ways. The Figures 4a and 4b illustrate possible electrical assemblies. So the figure 4a illustrates a configuration in which a radio-frequency RF voltage and a DC voltage Vdc are applied to the structure etched on the membrane at the micro-ribbon line L s .

La figure 4b illustre une autre configuration possible dans laquelle, la tension continue de commande du cristal liquide est appliquée entre les éléments de plan de masse PM11 et PM12 entourant la ligne micro-ruban.The figure 4b illustrates another possible configuration in which the direct control voltage of the liquid crystal is applied between the ground plane elements PM 11 and PM 12 surrounding the microstrip line.

Exemple de réalisation de boîtier selon l'invention comportant un filtre 3 pôles et deux cavités remplies de cristal liquideExample of embodiment of the housing according to the invention comprising a 3-pole filter and two cavities filled with liquid crystal

Dans l'exemple choisi, la fonction est un filtre à 3 pôles tel qu'illustré en figure 5 qui illustre une vue de dessus mettant en évidence les métallisations constitutives des lignes d'entrée L1 et de sortie L2, des résonateurs R1, R2 et R3, des plans de masse signal associés PMs. D'autres fonctions telles que des lignes à retard, des déphaseurs ou similaire peuvent être aussi réalisées.In the example chosen, the function is a 3-pole filter as illustrated in figure 5 which illustrates a view from above showing the metallizations constituting the L 1 and L 2 output lines, the resonators R 1 , R 2 and R 3 , associated signal ground planes PM s . Other functions such as delay lines, phase shifters or the like can also be realized.

Les cavités sont remplies avec le cristal liquide nématique commercial K15 de la société Merck dont la permittivité relative peut varier entre 2,9 et 3,1.The cavities are filled with the commercial nematic liquid crystal K15 from Merck whose relative permittivity can vary between 2.9 and 3.1.

On obtient les performances illustrées en figure 6, correspondant à l'évolution de l'adaptation (courbes descendantes) et de la transmission (courbes ascendantes) en fonction de la fréquence de fonctionnement pour différentes permittivités. La permittivité est ajustée par modification de la tension continue appliquée.The performances illustrated in figure 6 , corresponding to the evolution of adaptation (downward curves) and transmission (upward curves) as a function of the operating frequency for different permittivities. The permittivity is adjusted by changing the DC voltage applied.

La variation relative de la fréquence centrale obtenue est égale à ε r ⁢ 2 / ε r ⁢ 1

Figure imgb0001
soit ici 1 GHz à 30GHz. Et comme le montrent les courbes de la figure 6, le niveau d'adaptation, autour de -30dB, est parfaitement conservé.The relative variation of the central frequency obtained is equal to ε r ⁢ 2 / ε r ⁢ 1
Figure imgb0001
 here 1 GHz to 30 GHz. And as the curves of the figure 6 , the level of adaptation, around -30dB, is perfectly preserved.

Les performances en terme d'amplitude de variation en fréquence de fonctionnement du filtre 3 pôles dans un boîtier selon l'art connu et selon l'invention ont été comparées.

  1. a) Boîtier avec une structure de l'art antérieur telle qu'illustrée en figure 1 comprenant un substrat en alumine et une cavité remplie avec le cristal liquide K15 :
    • Variation relative de la fréquence centrale : 0,7 %
  2. b) Boîtier avec une structure de l'art antérieur telle qu'illustrée en figure 1 comprenant un substrat en matériau polymère RO 4003 et une cavité remplie avec le cristal liquide K15 : Variation relative de la fréquence centrale : 1,6 %
  3. c) Boîtier avec une structure de l'invention telle qu'illustrée en figure 2 comprenant une cavité remplie d'air et une cavité remplie avec le cristal liquide K15 :
    • Variation relative de la fréquence centrale : 3 %
  4. d) Boîtier avec une structure de l'invention telle qu'illustrée en figure 2 comprenant deux cavités remplies avec le cristal liquide K15 :
    • Variation relative de la fréquence centrale : 3,3 %
The performance in terms of amplitude of variation in operating frequency of the 3-pole filter in a case according to the known art and according to the invention were compared.
  1. a) Housing with a structure of the prior art as illustrated in figure 1 comprising an alumina substrate and a cavity filled with the liquid crystal K15:
    • Relative change in center frequency: 0.7%
  2. b) Housing with a structure of the prior art as illustrated in FIG. figure 1 comprising a substrate made of polymeric material RO 4003 and a cavity filled with the liquid crystal K15: Relative variation of the central frequency: 1.6%
  3. c) Housing with a structure of the invention as illustrated in figure 2 comprising a cavity filled with air and a cavity filled with the liquid crystal K15:
    • Relative variation of the central frequency: 3%
  4. d) Housing with a structure of the invention as illustrated in figure 2 comprising two cavities filled with the liquid crystal K15:
    • Relative change in center frequency: 3.3%

Claims (12)

  1. Electronic box comprising a substrate (12), a frequency tuned function at the surface of said substrate, a dielectric material with variable permittivity with an electrical excitation in contact with said function (Ls) and a support (11) integral with the substrate in such a manner as to define the box characterized in that the substrate comprises a membrane (13) supporting the tuned function, said membrane being comprised between an upper cavity (14) and a lower cavity (15) of the box, at least one cavity being filled with the dielectric material.
  2. Electronic box according to claim 1, characterized in that at least one cavity is filled with a material comprising liquid crystal.
  3. Electronic box according to claim 2, characterized in that the material is a composite material comprising a polymer and liquid crystal.
  4. Electronic box according to one of claims 1 to 3, characterized in that the lower face of the upper cavity and the upper face of the lower cavity each comprise a ground plane (PM11, PM12).
  5. Electronic box according to one of claims 1 to 4, characterized in that the function comprises a microstrip line (Ls) and an associated ground plane (PMs).
  6. Electronic box according to claim 5, characterized in that the substrate comprises a first part in semiconductor material presenting a locally machined surface, a second part comprising a membrane supported by a semiconductor material comprising a locally machined surface, said first part and second part being assembled, the machined surfaces being opposite, the lower cavity being defined between these machined surfaces and the membrane.
  7. Electronic box according to claim 6, characterized in that the support comprises a part in machined semiconductor material, the upper cavity being defined between the machined surface and the membrane.
  8. Electronic box according to one of claims 6 or 7, characterized in that the machined surfaces are metallized and constitute ground planes.
  9. Electronic box according to one of claims 1 to 8, characterized in that it comprises means for tuning the frequency of the function.
  10. Electronic box according to claim 9, characterized in that the means for tuning the frequency of the function are constituted by means for applying an electric field at the level of the function or the ground planes.
  11. Electronic box according to one of claims 1 to 10, characterized in that the box is in silicon, the membrane being a silica type material or silicon nitride or a combination of both, or benzocyclobutene.
  12. Electronic box according to claim 11, characterized in that the function is of the filter, delay line, phase shifter type.
EP06830197A 2005-12-22 2006-11-29 Module with frequency-tunable function Expired - Fee Related EP1964204B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0513122A FR2895390A1 (en) 2005-12-22 2005-12-22 HOUSING WITH FREQUENCY TUNABLE FUNCTION
PCT/EP2006/069069 WO2007071533A1 (en) 2005-12-22 2006-11-29 Module with frequency-tunable function

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EP1964204A1 EP1964204A1 (en) 2008-09-03
EP1964204B1 true EP1964204B1 (en) 2012-06-13

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CN102544740B (en) * 2011-09-28 2014-03-12 深圳光启高等理工研究院 Adjustable metamaterial based on working frequency and production method thereof
US8884725B2 (en) * 2012-04-19 2014-11-11 Qualcomm Mems Technologies, Inc. In-plane resonator structures for evanescent-mode electromagnetic-wave cavity resonators
US10339592B2 (en) * 2015-06-17 2019-07-02 Facebook, Inc. Configuring a virtual store based on information associated with a user by an online system
CN108428973B (en) * 2018-02-28 2022-08-09 京东方科技集团股份有限公司 Phase shifter and manufacturing method and working method thereof
CN108511858B (en) * 2018-04-13 2020-04-14 京东方科技集团股份有限公司 Liquid crystal phase shifter and electronic equipment
CN109066021B (en) * 2018-07-27 2020-10-23 合肥工业大学 Reflective liquid crystal phase-shifting unit
CN112002971A (en) * 2020-09-01 2020-11-27 苏州诺泰信通讯有限公司 Filter containing filling medium
CN114142191B (en) * 2020-09-04 2023-04-14 京东方科技集团股份有限公司 Filter and antenna device of substrate integrated waveguide

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US7755445B2 (en) * 2004-08-03 2010-07-13 Banpil Photonics, Inc. Multi-layered high-speed printed circuit boards comprised of stacked dielectric systems
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EP1964204A1 (en) 2008-09-03
CN101341626A (en) 2009-01-07
US20100019865A1 (en) 2010-01-28
JP2009521150A (en) 2009-05-28
WO2007071533A1 (en) 2007-06-28
JP4828611B2 (en) 2011-11-30

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