EP1715597B1 - Antenne mit planaren strahlenden Flächen mit Umschalt-Schaltkreis - Google Patents

Antenne mit planaren strahlenden Flächen mit Umschalt-Schaltkreis Download PDF

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Publication number
EP1715597B1
EP1715597B1 EP06110781.9A EP06110781A EP1715597B1 EP 1715597 B1 EP1715597 B1 EP 1715597B1 EP 06110781 A EP06110781 A EP 06110781A EP 1715597 B1 EP1715597 B1 EP 1715597B1
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EP
European Patent Office
Prior art keywords
mhz
radiation
diodes
zone
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
EP06110781.9A
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English (en)
French (fr)
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EP1715597A3 (de
EP1715597A2 (de
Inventor
Fernando Romao
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Apple Inc
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Apple Inc
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Publication of EP1715597A2 publication Critical patent/EP1715597A2/de
Publication of EP1715597A3 publication Critical patent/EP1715597A3/de
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Publication of EP1715597B1 publication Critical patent/EP1715597B1/de
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q9/00—Electrically-short antennas having dimensions not more than twice the operating wavelength and consisting of conductive active radiating elements
    • H01Q9/04—Resonant antennas
    • H01Q9/06—Details
    • H01Q9/14—Length of element or elements adjustable
    • H01Q9/145—Length of element or elements adjustable by varying the electrical length
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q21/00—Antenna arrays or systems
    • H01Q21/30—Combinations of separate antenna units operating in different wavebands and connected to a common feeder system
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/314—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors
    • H01Q5/321—Individual or coupled radiating elements, each element being fed in an unspecified way using frequency dependent circuits or components, e.g. trap circuits or capacitors within a radiating element or between connected radiating elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01Q—ANTENNAS, i.e. RADIO AERIALS
    • H01Q5/00—Arrangements for simultaneous operation of antennas on two or more different wavebands, e.g. dual-band or multi-band arrangements
    • H01Q5/30—Arrangements for providing operation on different wavebands
    • H01Q5/307—Individual or coupled radiating elements, each element being fed in an unspecified way
    • H01Q5/342—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes
    • H01Q5/357—Individual or coupled radiating elements, each element being fed in an unspecified way for different propagation modes using a single feed point
    • H01Q5/364—Creating multiple current paths
    • H01Q5/371—Branching current paths

Definitions

  • the present invention relates to mobile telephony.
  • an antenna surface (s) radiant (s) plane (s) having a switchable circuit More specifically, it relates to an antenna surface (s) radiant (s) plane (s) having a switchable circuit.
  • the invention proposes in particular an antenna of this type capable of being used in transmission / reception over at least two frequency bands, and having improved performances compared to antennas of the state of the art.
  • PIFA Planar Inverted-F Antenna
  • flat antenna type F inverted flat antenna type F inverted
  • Patch which include, as illustrated by the figure 1 , a ground plane 1 and a plane conductive surface 2 which is superimposed on this ground plane 1, and extends at right and substantially parallel thereto.
  • patch antennas are widely used in mobile telephony because these antennas offer acceptable radiation performance (far-field measurement) while locally producing a lower near field than conventional antennas whip or helical antennas.
  • One of the current concerns is to define an antenna covering multiple bands.
  • GSM global system of mobile communications
  • UMTS universal system of telecommunication with mobiles
  • a first solution is of course to use several antennas.
  • a second solution is to use a single antenna with multiple resonances.
  • these antennas are very difficult to cover all bands by providing good performance. If they succeed, it is at the cost of an increase in the complexity of the antenna (especially because of additional resonators and a large number of access points) or the volume of the antenna.
  • the inventors are not aware of a commercial product incorporating a low volume integrated antenna (compatible with mobile phone integration) that covers all these frequency bands with a limited number of access points to the antenna.
  • a third solution is to use switchable antennas.
  • These antennas have more than one access point and include switchable elements within the antenna. It is therefore difficult to find a simple and efficient antenna control system.
  • the switchable antennas are most often implemented using PIN diodes. Therefore, there may be harmonic generation during a transmission in high power mode (1 watt for example).
  • the first method is to provide a circuit assembly whose diodes are always broadcast. Such a method is too strong a constraint for the design of an antenna covering multiple frequency bands.
  • the second method is to provide an assembly in which the blocked diodes are polarized with a strongly negative voltage, typically -40 to -60 volts for example, for a system accepting a power of 33dBm.
  • a strongly negative voltage typically -40 to -60 volts for example, for a system accepting a power of 33dBm.
  • a high negative voltage is sometimes difficult to generate in addition to being incompatible with certain diodes (maximum reverse voltage of the order of -0 volts).
  • the third method is to provide a montage as on the Figure 2A , namely whose diodes 3 are placed "head-to-tail", to reduce the generation of harmonics.
  • a central common terminal 65 to the diodes 3 is the cathode of each diode.
  • the Figure 2B also represents the diodes in head-to-tail configuration in the other direction (with the terminal central common 65 being the anode). It is known for a mode-driven operation that an assembly with diodes back-to-back makes it possible to reduce the harmonics. In a driven array, the diodes are naturally placed symmetrically. The reduction of harmonics is excellent.
  • any use of a diode topology placed "head-to-tail" is often described as unsuitable for antennas because it requires many access points.
  • the number of access points must be limited.
  • the pure and simple transposition of circuit design methods with back-to-back diodes to antennas used in conduit generally generates circuits producing harmonics of power higher than the limits fixed by the standards in force in mobile telephony.
  • US2003 / 0146873 A1 discloses an antenna according to the preamble of claim 1.
  • the invention proposes to overcome these disadvantages.
  • the invention proposes a transmitting / receiving antenna according to claim 1.
  • a variant of the assembly may be to use a multilayer antenna : the direct current flows on one layer or the other, the RF current will ignore the two layers by seeing only one, given the very strong coupling (close surfaces facing).
  • the invention also relates to a mobile phone comprising an aforementioned antenna and a method of manufacturing such an antenna.
  • the invention has many advantages.
  • the invention has many advantages.
  • the invention proposes an antenna comprising a diode assembly in a back-to-back configuration, which makes it possible to limit the generation of harmonics and therefore to propose a mobile phone that meets the standards in force. Indeed, simulations confirmed by measurements have made it possible to demonstrate that the power of the harmonics generated by an antenna according to the invention is less than -30 dBm at a frequency of 2 GHz for an injected power of 33 dBm at 1 GHz .
  • the invention proposes an antenna that does not require the generation of a large negative voltage.
  • the antenna is therefore compatible with all PIN diodes and does not require the creation of the aforementioned negative voltage.
  • the transmitting / receiving antenna schematically represented on the figure 3 comprises a ground plane (not shown) and a plane radiating surface 2 which extends superimposed on said ground plane while being substantially parallel thereto.
  • An antenna according to the invention may comprise more than one planar radiating surface.
  • the radiating surface 2 is connected on one side to the ground plane by the connection point G and on the other side to a transmission / reception electronics of the RF radio frequency signals as well as to an electronic control C by the point of connection A, which can also be called the point of attack.
  • a capacitor 73 is connected between the radio frequency transmission / reception electronics and the connection point A.
  • the capacitor 73 has a very low impedance for the radio frequency currents but has a very high impedance for the DC or frequency currents. low.
  • the radiation surface 2 is divided into at least two radiation zones 51 and 52 separated by a junction 41 formed over most of its length with a slot.
  • the surface 2 comprises a third radiation zone 53 separated from the zone 51 by a junction 42 also formed over most of its length by a slot.
  • the ends of the junction 42 comprise decoupling means 421 and 422 also forming a mechanical connection between the zones 51 and 53. The operation of the decoupling means 421 and 422 is described in more detail later in the present description.
  • the junction 41 between the zone 51 and the zone 52 comprises a symmetrical active switch 60 described in more detail in the remainder of this description.
  • the junction 41 also comprises an inductor 70 connected between a terminal 71 located on the zone 53 and a terminal 72 situated on the zone 52.
  • the radiation zone 51 comprises an isolated zone 4.
  • the isolated zone 4 is connected to the remainder of the zone 51 by three decoupling means 43 located on three sides of the zone 4.
  • the isolated zone 4 has the smallest possible area in order to reduce the number of decoupling means 43 to put in place.
  • the symmetrical switch 60 mainly comprises two diodes 31 and 32 connected in series in a back-to-back configuration between a terminal 40 located on the insulated zone 4 and a terminal 520 located on the radiation zone 52.
  • the diodes are active diodes PIN.
  • a configuration called "head-to-tail” is a configuration in which the diodes are connected. in series symmetrically with respect to a central terminal 65 located in the middle of the two diodes 31 and 32.
  • the central common point 65 to the diodes 31 and 32 is the cathode of each diode.
  • the switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.
  • the switch 60 comprises a first inductor 61 connected on the one hand between a terminal 66 located on the radiation zone 51 (not on the isolated zone 4) and on the other hand the central terminal 65 located between the two diodes 31 and 32.
  • the balancing components comprise a second inductor 62 of the same value as the first inductance 61, to compensate exactly the RF behavior for the positive and negative half-waves due to the inductance 61.
  • the second inductor 62 is connected in series with a capacitor 63.
  • Capacitor 63 has a very low impedance for radio frequency currents and a very high impedance for DC currents or low frequency currents. It is therefore transparent for the radio frequency currents, and no direct current can pass through the inductor 62.
  • the second inductor 62 and the symmetrizing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.
  • Such an arrangement allows switching of the active switch 60 with harmonics generation according to the standards, because of the symmetry of the switch 60 for the radio frequency currents.
  • the inductances 61, 62 have a value of 33 nH and the capacitor 63 has a value of 22 pF.
  • the switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32.
  • the inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.
  • the control of the diodes 31 and 32 is done by means of the command C.
  • the control current of the switch 60 reaches the antenna and the switch 60 via the point of attack A. It then passes into the inductor 61 (not in the inductor 62 due to the presence of the capacitor 63) before dividing into two parts. A first part passes through the diode 31, the zone 4, the inductor 64 and joins the point G by the inductor 70. The second part of the continuous control current coming from the inductor 61 passes through the diode 32 and joins the point G through the inductor 70.
  • the antenna according to the figure 3 can switch between two frequency bands, depending on the control of the switch 60 described above.
  • a first frequency band is reached when the diodes 31 and 32 are blocked.
  • a radiofrequency current if1 flows on the periphery (it is of course the places where the current density is highest) of a first radiation zone constituted by the radiation zones 51 and 53 as shown by the solid line.
  • Current if1 passes through insulated area 4, since capacitors 43 are transparent for radio frequencies. It is recalled that the resonance wavelength of a patch antenna depends in particular on the perimeter of the radiation surface.
  • the decoupling means 421 and 422 are able to prevent the passage of a direct current (for example a control current) from the point A directly to point G. As shown in figure 3 , the means 421 and 422 further enable the flow of radiofrequency current if1 on the periphery of the zones 51 and 53 in particular.
  • the means 421 and 422 are transparent for the radio frequency currents.
  • the means 421 and 422 comprise decoupling capacitors GSM and / or DCS and / or UMTS.
  • the capacities are typically of the order of 22 picofarads. In the remainder of the present description, all the decoupling capacitors have a capacity of this order of magnitude.
  • means 421 and 422 define two different paths for a direct current and for a radio frequency current.
  • Dashed lines show the path of the radio frequency current if2 in the case where the diodes 31 and 32 are on. Another resonant frequency is then defined because of the current path if2 between the points A and G.
  • the means 421 and 422 are important for forcing the passage of the control current from the point A through the inductance 61. and the diodes 31 and 32.
  • the capacitor 63 for its part avoids the passage of the control current in the inductance 62 instead of the diodes 31 and 32.
  • the means 421 and 422 and the capacitor 63 allow the passage of the radiofrequency current according to the dotted lines on the periphery of zones 51, 52 and 53.
  • the value of the radiation frequencies f 1 and f 2 can be varied according to the applications desired.
  • the figure 8A is a mounting variant of the figure 3 .
  • the assembly consists in using a multilayer antenna.
  • the direct control current of the symmetrical switch flows on one or the other layer of the antenna.
  • the RF current ignores the two layers by seeing only one, given the very strong coupling layers (close surfaces facing).
  • the assembly of the figure 8A it is possible to suppress an inductance (the equivalent of the inductance 70 on the assembly of the figure 3 ) and three capacitors (the equivalents of the capacitors 43 on the assembly of the figure 3 ). It also removes the need to have an isolated area (equivalent to the isolated area 4 of the assembly of the figure 3 ).
  • the other elements of the assembly remain identical to those described with reference to the figure 3 .
  • the central terminal 65 to the diodes 31 and 32 is the anode of each diode.
  • the diodes 31 and 32 are placed head to tail.
  • the Figure 8B shows that the elements carrying a cross (point A, periphery of the zones 51 and 53 and inductance 61) are connected to each other on a layer, and the elements bearing a line (point G, periphery of the zones 51 and 53, inductance 64 and diode 31) are connected to each other on another layer.
  • decoupling capacitors 43 on the figure 3
  • uses an antenna consisting of two isolated layers connected by interconnections printed circuit with two layers, rigid or flexible for example).
  • the figure 4 schematically shows a second embodiment of an antenna according to the invention comprising two symmetrical active switches 60.
  • the antenna thus comprises a first radiation zone 52 comprising a grounding point G and possibly a slot indicated by 6.
  • the antenna also comprises a radiation zone 51 comprising an isolated zone 4 connected to the remainder of the zone 51 by decoupling means 43 preferably comprising GSM and / or DCS and / or UMTS decoupling capacitors (the isolated zone 4 has an preferentially the smallest possible area to avoid the multiplication of decoupling means 43).
  • the zone 51 has a point A 'connected to a control C.
  • a capacitor 74 is connected between the point A' and the ground.
  • the point A ' is a control point of the diodes 31 and 32 and a ground point for the RF current because it is connected to ground by a capacitor 74.
  • the zone 51 is connected on one of its sides to the radiation zone 52 by decoupling means 411 and 412, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 51 is also connected to the zone 52 on another of its sides comprising the insulated zone 4 by means of a symmetrical switch 60 identical to that of the figure 3 .
  • the symmetrical switch 60 comprises mainly two diodes 31 and 32 connected in series in a head-to-tail configuration between a terminal 40 situated on the insulated zone 4 and a terminal 520 situated on the radiation zone 52.
  • the switch 60 further comprises symmetry components 62 and 63 providing electrical symmetry of the switch for radio frequency currents.
  • the switch 60 comprises a first inductor 61 connected on the one hand between the terminal 66 located on the radiation zone 51 (not located on the isolated zone 4) and on the other hand a central terminal 65 located between the two diodes 31 and 32 .
  • the switch 60 further comprises the symmetry components 62 and 63 providing the electrical symmetry of the switch for the radio frequencies.
  • the balancing components thus comprise a second inductor 62 of the same value as the first inductor 61.
  • the second inductor 62 is connected in series with a capacitor 63 preventing the passage of DC currents in inductance 62, but making it possible to compensate the effect inductance 61 for the positive and negative half-waves of the radio frequency currents.
  • the second inductor 62 and the balancing capacitor 63 are connected between a terminal 67 located on the radiation zone 52 and the central terminal 65.
  • the switch 60 also comprises at least one inductor 64 connected in parallel with the two diodes 31 and 32.
  • the inductor 64 is connected between a terminal 68 located on the insulated zone 4 and a terminal 69 situated on the zone 52.
  • the antenna also comprises a radiation zone 53 comprising an isolated zone 5 connected to the remainder of the radiation zone by decoupling means 531 (the isolated zone 5 also has a smaller possible area).
  • the zone 53 has a point of attack or connection A.
  • the point of attack A is connected to an electronic transmission / reception of RF radio frequency signals as well as a control electronics C by the point of connection A.
  • A is actually the RF point of attack (point of entry of the antenna).
  • a capacitor 73 is connected between the transmission / reception electronics of the radio frequency signals and the connection point A.
  • the zone 53 is connected to the zone 51 by decoupling means 421 and 422, preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 53 is also connected to the zone 52 by a symmetrical switch 60.
  • the diodes 31 and 32 of the switch 60 are in head-to-tail configuration between a terminal 510 situated on the insulated zone 5 and a terminal 522 located on the zone 52.
  • An inductor 61 is connected between on the one hand a terminal 530 located on the zone 53 (not on the insulated area 5) and the central terminal 65, while the symmetrization components (having as before an inductance 62 connected in series of a capacitor 63) are connected between the terminal 65 and a terminal 521 located on the zone 52.
  • An inductor 64 is connected between a terminal 511 located on the insulated zone 5 and a terminal 523 situated on the zone 52.
  • the figure 6 represents the path of the control current between the point A 'connected to the control C of the figure 4 and the grounding point G to switch the switch from the off state to the on state.
  • control current of the diodes 31 and 32 passes over the periphery of the zone 51, the means 411 and 412 playing their decoupling role in order to prevent the current from passing directly from the point A 'to the point G without passing through the diodes. 31 and 32.
  • the means 421 and 422 avoid the passage of the current from the zone 51 to the zone 53.
  • the capacitor 63 prevents the control current from passing through the inductor 62.
  • the current passing through the diode 31 also passes through the insulated zone 4 before passing through the inductor 64 to join the point G of the zone 52.
  • the current passing through the diode 32 passes directly through zone 52 before joining point G.
  • the central terminal 65 of the back-to-back configuration of the diodes 31, 32 is connected to the control point A 'of the diodes 31 and 32 and to the grounding for the RF currents - via the inductor 61 on the terminal 66, the inductor 61
  • the diodes 31 and 32 are connected to the grounding point G - the diode 31 via the inductor 64 on the terminal 69 and the diode 32 on the terminal 520.
  • the inductances 61 and 64 have low values for the control and bias currents of the diodes 31 and 32.
  • the diodes 31 and 32 are connected in parallel.
  • the figure 7 shows schematically that when the two switches 60 are in a non-conducting state (diodes 31 and 32 blocked), then a first resonant frequency f1 is defined by to the path of a current if1 on the periphery of the zones 53, 51 and 52 as shown by the solid line.
  • a frequency f 2 is defined by the flow of the current i.sub.2 shown in phantom.
  • the radiofrequency current if2 passes through the diodes 31 and 32 of the on-switch and on the periphery of the zones 53, 51 and 52.
  • a third frequency f 3 is defined by the current flow if 3 shown in dotted lines. if3 passes through the diodes 31 and 32 of the switch passing on the periphery of the zones 53, 51 and 52.
  • a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), in particular from 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS system.
  • GSM global system of mobile communications
  • a frequency band is around 1800 MHz, preferably that of the DCS system.
  • 1800 or "Digital Communication System 1800 MHz” in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal system of telecommunications with mobiles (UMTS), in particular 1920 and 2170 MHz.
  • the figure 5 shows a third embodiment comprising two symmetrical switches between on the one hand a zone 51 and a zone 52 and on the other hand a zone 53 and the zone 52.
  • the point G of grounding is located on a central zone 54 connected to the zones 51 and 53 by decoupling means 431, 432, 441, 442 preferably comprising decoupling capacitors GSM and / or DCS and / or UMTS.
  • the zone 54 is connected to the zone 52 via an inductance 70 between a terminal 71 on the zone 54 and a terminal 72 on the zone 52.
  • the antenna of the figure 5 allows to switch between three frequency bands: a frequency band is around 900 MHz, preferably that of the global system of mobile communications (GSM), including 823 MHz to 960 MHz, a frequency band is around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz and a frequency band is around 2000 MHz, preferably that of the universal mobile telecommunication system, in particular 1920 and 2170 MHz.
  • GSM global system of mobile communications
  • a frequency band is around 1800 MHz, preferably that of the DCS 1800 or "Digital Communication System 1800 MHz" system, in particular from 1710 MHz to 1990 MHz
  • a frequency band is around 2000 MHz, preferably that of the universal mobile telecommunication system, in particular 1920 and 2170 MHz.

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Claims (10)

  1. Sende-/Empfangsantenne umfassend eine Grundplatte (1) und zumindest eine planare Strahlungsfläche (2), die sich gegenüber der Grundplatte und im Wesentlichen parallel zu dieser erstreckt, wobei die Strahlungsfläche (2) auf zumindest zwei Strahlungsbereiche (51, 52) aufgeteilt ist, die durch Verbindungen (41, 42) voneinander getrennt sind, die Schalter umfassen, die dazu in der Lage sind, die gesamte Strahlungsfläche in Resonanz zu bringen, indem alle Strahlungsbereiche (51, 52) elektrisch miteinander verbunden werden, und die dazu in der Lage sind, einen Teil der Strahlungsfläche in Resonanz zu bringen, indem ein Teil der Strahlungsbereiche (51, 52) elektrisch miteinander verbunden werden, dadurch gekennzeichnet, dass zumindest ein symmetrischer Schalter (60) zwei aktive Dioden (31, 32) umfasst, die in einer antiparallel geschalteten Konfiguration zwischen einem ersten Strahlungsbereich (51) und einem zweiten Strahlungsbereich (52) der zumindest zwei Strahlungsbereiche (51, 52) direkt miteinander verbunden sind, sowie passive Symmetrierungsbauteile (62, 63), die die elektrische Symmetrie des Schalters (60) für die Hochfrequenzströme gewährleisten, wobei der Schalter (60) eine erste Induktivität (61) umfasst, die zwischen einerseits dem ersten Strahlungsbereich (51) und andererseits einem zentralen Anschluss (65) geschaltet ist, der zwischen den zwei direkt verbundenen, antiparallel geschalteten Dioden (31, 32) angeordnet ist, wobei die Bauteile (62, 63) eine zweite Induktivität (62) mit demselben Wert als die erste Induktivität (61) umfassen, die mit einem Kondensator (63) seriell geschaltet ist, wobei die zweite Induktivität (62) und der Kondensator (63) zwischen einerseits dem zweiten Strahlungsbereich (52) und dem zentralen Anschluss (65) andererseits geschaltet sind.
  2. Antenne nach dem vorhergehenden Anspruch, bei welcher der symmetrische Schalter (60) zumindest eine Induktivität (64) umfasst, die zwischen den zwei antiparallel geschalteten Dioden parallel geschaltet ist.
  3. Antenne nach einem der vorhergehenden Ansprüche, umfassend zumindest drei Strahlungsbereiche (51, 52, 53).
  4. Antenne nach einem der vorhergehenden Ansprüche, bei welcher ein Frequenzband um 900 MHz herum, vorzugsweise dasjenige des globalen Mobilkommunikationssystems (GSM), insbesondere von 823 MHz bis 960 MHz, ist, und/oder ein Frequenzband um 1800 MHz herum, vorzugsweise dasjenige des DCS 1800 Systems oder des digitalen Kommunikationssystems (DCS) 1800 MHz, insbesondere von 1710 MHz bis 1990 MHz, ist, und/oder ein Frequenzband um 2000 MHz herum, vorzugsweise dasjenige des universellen Mobiltelekommunikationssystems (UMTS), insbesondere 1920 und 2170 MHz, ist.
  5. Antenne nach einem der vorhergehenden Ansprüche, umfassend Abkopplungsmittel (43, 411, 412, 421, 422, 431, 432, 441, 442, 531), die zwischen zumindest zwei Strahlungsbereichen (51, 52) gekoppelt sind und Abkopplungskondensatoren für GSM und/oder DCS und/oder UMTS umfassen.
  6. Antenne nach einem der vorhergehenden Ansprüche, bei welcher die planare Strahlungsfläche einen Erdungspunkt (G) und zumindest einen Angriffspunkt (A, A') oder einen Punkt zur Erdung der Hochfrequenzströme (RF) umfasst, wobei der kontinuierliche Steuerstrom des symmetrischen Schalters (60) über den Angriffspunkt oder den Punkt zur Erdung der Hochfrequenzströme an die Antenne gelangt, wobei ein zentraler Anschluss (65) der antiparallel geschalteten Konfiguration der Dioden (31, 32) mit dem Angriffspunkt oder dem Punkt zur Erdung der Hochfrequenzströme verbunden ist und die Anschlüsse der Dioden (31, 32), die dem zentralen Anschluss (65) entgegengesetzt sind, mit dem Erdungspunkt (G) so verbunden sind, dass die Dioden für den Steuerstrom parallel geschaltet sind.
  7. Antenne nach einem der vorhergehenden Ansprüche, bei welcher die Strahlungsbereiche Mehrschichtplatten umfassen.
  8. Mobiltelefon, dadurch gekennzeichnet, dass es eine Antenne nach einem der vorherigen Ansprüche umfasst.
  9. Verfahren zum Herstellen einer Sende-/Empfangsantenne umfassend eine Grundplatte (1) und zumindest eine planare Strahlungsfläche (2), die sich gegenüber der Grundplatte und im Wesentlichen parallel zu dieser erstreckt, wobei die Strahlungsfläche (2) auf zumindest zwei Strahlungsbereiche (51, 52) aufgeteilt ist, die durch Verbindungen (41, 42) voneinander getrennt sind, die Schalter umfassen, die dazu in der Lage sind, die gesamte Strahlungsfläche in Resonanz zu bringen, indem alle Strahlungsbereiche (51, 52) elektrisch miteinander verbunden werden, und die dazu in der Lage sind, einen Teil der Strahlungsfläche in Resonanz zu bringen, indem ein Teil der Strahlungsbereiche (51, 52) elektrisch miteinander verbunden werden, dadurch gekennzeichnet, dass es die folgenden Schritte umfasst:
    - Anordnen von zwei aktiven Dioden (31, 32), die in einer antiparallel geschalteten Konfiguration direkt miteinander verbunden sind, in zumindest einen symmetrischen Schalter (60) zwischen einem ersten Strahlungsbereich (51) und einem zweiten Strahlungsbereich (52) der zumindest zwei Strahlungsbereiche (51, 52); und
    - Anordnen von passiven Symmetrierungsbauteilen (62, 63), die die elektrische Symmetrie des Schalters (60) für die Hochfrequenzströme gewährleisten, in den symmetrischen Schalter,
    wobei der Schalter (60) eine erste Induktivität (61) umfasst, die zwischen einerseits dem ersten Strahlungsbereich (51) und andererseits einem zentralen Anschluss (65) geschaltet ist, der zwischen den zwei direkt verbundenen, antiparallel geschalteten Dioden (31, 32) angeordnet ist, wobei die Bauteile (62, 63) eine zweite Induktivität (62) mit demselben Wert als die erste Induktivität (61) umfassen, die mit einem Kondensator (63) seriell geschaltet ist, wobei die zweite Induktivität (62) und der Kondensator (63) zwischen einerseits dem zweiten Strahlungsbereich (52) und dem zentralen Anschluss (65) andererseits geschaltet sind.
  10. Verfahren nach dem vorhergehenden Anspruch, umfassend einen Schritt, der darin besteht, Strahlungsbereiche so anzuordnen, dass ein Frequenzband um 900 MHz herum, vorzugsweise dasjenige des globalen Mobilkommunikationssystems (GSM), insbesondere von 823 MHz bis 960 MHz, ist, und/oder ein Frequenzband um 1800 MHz herum, vorzugsweise dasjenige des DCS 1800 Systems oder des digitalen Kommunikationssystems (DCS) 1800 MHz, insbesondere von 1710 MHz bis 1990 MHz, ist, und/oder ein Frequenzband um 2000 MHz herum, vorzugsweise dasjenige des universellen Mobiltelekommunikationssystems (UMTS), insbesondere 1920 und 2170 MHz, ist.
EP06110781.9A 2005-03-07 2006-03-07 Antenne mit planaren strahlenden Flächen mit Umschalt-Schaltkreis Expired - Fee Related EP1715597B1 (de)

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FR0502246A FR2882874B1 (fr) 2005-03-07 2005-03-07 Antenne a surfaces rayonnantes planes a circuit commutable

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EP1715597A3 EP1715597A3 (de) 2007-04-11
EP1715597B1 true EP1715597B1 (de) 2016-03-02

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Publication number Priority date Publication date Assignee Title
JPH06291696A (ja) * 1993-03-30 1994-10-18 Sony Corp アンテナ共用器
GB2335798B (en) * 1998-03-26 2003-01-29 Nec Technologies Enhanced bandwidth antennas
US6169523B1 (en) * 1999-01-13 2001-01-02 George Ploussios Electronically tuned helix radiator choke
FR2812766B1 (fr) * 2000-08-01 2006-10-06 Sagem Antenne a surface(s) rayonnante(s) plane(s) et telephone portable comportant une telle antenne
US6864848B2 (en) * 2001-12-27 2005-03-08 Hrl Laboratories, Llc RF MEMs-tuned slot antenna and a method of making same

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EP1715597A2 (de) 2006-10-25
FR2882874B1 (fr) 2007-05-11
FR2882874A1 (fr) 2006-09-08

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