EP1665337A4 - Dotierte legierungen für elektrische verbindungen, herstellungsverfahren und verwendungen dafür - Google Patents
Dotierte legierungen für elektrische verbindungen, herstellungsverfahren und verwendungen dafürInfo
- Publication number
- EP1665337A4 EP1665337A4 EP04783167A EP04783167A EP1665337A4 EP 1665337 A4 EP1665337 A4 EP 1665337A4 EP 04783167 A EP04783167 A EP 04783167A EP 04783167 A EP04783167 A EP 04783167A EP 1665337 A4 EP1665337 A4 EP 1665337A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- copper
- phosphorus
- ppm
- based dopant
- solder material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01027—Cobalt [Co]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01032—Germanium [Ge]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01047—Silver [Ag]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01049—Indium [In]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01051—Antimony [Sb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01084—Polonium [Po]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/014—Solder alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1301—Thyristor
- H01L2924/13034—Silicon Controlled Rectifier [SCR]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1306—Field-effect transistor [FET]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19042—Component type being an inductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
Definitions
- the field of the invention is thermal interconnect systems, thermal interface systems and interface materials in electronic components, semiconductor components and other related layered materials applications.
- the spheres, balls, powder, preforms or some other solder-based component that can provide an electrical interconnect between two components are utilized.
- the spheres form the electrical interconnect between a package and a printed circuit board and/or the electrical interconnection between a semiconductor die and package or board.
- the locations where the spheres contact the board, package or die are called bond pads.
- the interaction of the bond pad metallurgy with the sphere during solder reflow can determine the quality of the joint, and little interaction or reaction will lead to a joint that fails easily at the bond pad.
- the Niedrich patents and application show copper used as a dopant in Sn-Pb-In solders to minimize the consumption of copper bond pads or connectors (i.e., no nickel barrier layer is used).
- the copper in the solder was found to decrease the copper connector dissolution.
- Niedrich uses the copper to inhibit nickel barrier layer interaction through forming copper interaietallics or (Cu, Ni)Sn intennetallics.
- the Niedrich patents are very similar in their use of copper as US 2671844, which adds copper to solder in amounts greater than 0.5 wt % to rn imize dissolution of copper soldering iron tips during fine soldering operations.
- the copper concentration used is in excess of 1000 ppm and several other elements are also added as alloying additions to improve the liquidus, solidus, flow properties and surface finish of the solder.
- US Issued Patent 2303193A teaches the use of 0.1 - 1.5% Cu (1000 - 15,000 ppm Cu) in addition to Cd and Sb to increase the creep resistance of the solder.
- solder in less than the amount indicated is not sufficient materially to improve the durability over ordinary lead-tin alloys.
- solder materials and solder dopants that have no deleterious effects on bulk solder properties, yet slows the consumption of the nickel-barrier layer and hence growth of a phosphorus rich layer, so that bond integrity is maintained during reflow and post reflow thermal aging; b) design and produce electrical interconnects that meet customer specifications while minimizing the production costs and maximizing the quality of the product incorporating the electrical interconnects; and c) develop reliable methods of producing electrical interconnects and components comprising those interconnects.
- Solder materials and dopants described herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant.
- Methods of forming doped solder materials include: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to form a doped solder material.
- Layered materials are also described herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder material comprising at least one phosphorus-based dopant and at least one copper-based dopant, such as those described herein, and d) a semiconductor die or package. Electronic and semiconductor components that comprise solder materials and/or layered materials described herein are also contemplated.
- the metallization on a substrate, package or board to which electrical interconnects, such as BGA spheres, are typically bonded is usually copper. Copper reacts rapidly with the major constituent of most solders (tin) to form Cu-Sn intermetallic compounds, which grows rapidly and can exhibit spalling or breakage from the interface. This breakage reduces the strength and integrity of the solder joint.
- barrier layers that prevent direct contact of Sn and Cu are utilized. These additional layers are often referred to as bond pad metallurgy or under bump metallurgy (UBM). Bond pad metallurgy for BGA spheres typically has involved the use of nickel-plating to provide a barrier layer for the copper and a thin coating of gold to maintain solderability.
- Solder joint failures occur through this phosphorus rich layer. These types of failures are known in the industry as "Black Pad” failures, as the phosphorus rich layer that is exposed by the failure can have a blackish appearance. Since intermetallics can grow rapidly even in the solid state when the joint is exposed to elevated temperatures, these failures can occur in thermally aged joints that appeared to be good immediately after solder reflow. Solder materials and dopants contemplated herein comprise at least one solder material, at least one phosphorus-based dopant and at least one copper-based dopant.
- Methods of forming doped solder materials described herein comprise: a) providing at least one solder material; b) providing at least one phosphorus-based dopant; c) providing at least one copper-based dopant, and d) blending the at least one solder material, the at least one phosphorus-based dopant and the at least one copper-based dopant to forai a doped solder material, hi contemplated embodiments, the dopants of copper and phosphorus that are added to the solder alloy or material reduce the consumption of the Electroless Nickel (EN) plated barrier layer.
- EN Electroless Nickel
- the dopants are added to the solder alloy that could be used to produce powders, paste, ingots, wire, preforms or BGA spheres through a process such as that described in coiTvmonly-owned US Issued Patent No. 6579479, which is incorporated herein in its entirety by reference.
- Layered materials are also contemplated herein that comprise: a) a surface or substrate; b) an electrical interconnect; c) a solder material comprising a phosphorus-based dopant and a copper-based dopant, such as those described herein, and d) a semiconductor die or package.
- Contemplated surfaces may comprise a printed circuit board or a suitable electronic component.
- solder materials and/or layered materials described herein are also contemplated.
- Contemplated embodiments described herein differ from the cited references in that the concentrations of alloying additions made and in the use of phosphorus as an additive to the solder are different and surprisingly effective.
- High levels of copper in the solder are shown in multiple papers, such as the Jeon papers cited previously herein, to lower the consumption of the intermetallic layer. The levels utilized herein are lower by a factor of 2.5 - >10.
- the work by Ho shows that a different intermetallic forms at the nickel/solder interface for copper compositions below 0.2% (2000 ppm). The combination of copper and phosphorus was not noted anywhere in the levels of the subject matter presented herein.
- the Niedrich patents described previously herein use copper to inhibit nickel barrier layer interaction through forming copper intermetallics or (Cu, Ni)Sn intermetallics.
- the Niedrich patents are very similar in their use of copper as US 2671844, which adds copper to solder in amounts greater than 0.5 wt % to minimize dissolution of copper soldering iron tips during fine soldering operations. Both of these copper additions need to be significantly higher than the amounts contemplated herein. The same is true for the Ozaki patent, wherein the addition of copper is significantly higher than the amounts contemplated herein.
- the solder material may comprise any suitable solder material, alloy or metal, such as indium, lead, silver, copper, aluminum, tin, bismuth, gallium and alloys thereof, silver coated copper, silver coated aluminum or a combination thereof.
- Preferred solder materials may comprise lead-tin alloys, including a lead (37%)-tin (63%) eutectic alloy, indium tin (InSn) compounds and alloys, indium silver (InAg) compounds and alloys, indium-based compounds, tin silver copper compounds (which already comprise copper) and alloys (SnAgCu), tin bismuth compounds and alloys (SnBi), aluminum-based compounds and alloys and combinations thereof.
- metal means those elements that are in the d-block and f-block of the Periodic Chart of the Elements, along with those elements that have metal-like properties, such as silicon and germanium.
- d- block means those elements that have electrons filling the 3d, 4d, 5d, and 6d orbitals surrounding the nucleus of the element.
- f-block means those elements that have electrons filling the 4f and 5f orbitals surrounding the nucleus of the element, including the lanthanides and the actinides.
- Preferred metals include such as indium, lead, silver, copper, aluminum, tin, bismuth, gallium and alloys thereof, silver coated copper, and silver coated aluminum.
- metal also includes alloys, metal/metal composites, metal ceramic composites, metal polymer composites, as well as other metal composites.
- compound means a substance with constant composition that can be broken down into elements by chemical processes.
- Contemplated dopants comprise at least one phosphorus-based compound/dopant and at least one copper-based compound dopant. Dopant levels contemplated herein are less than about 100 ppm for phosphorus and less than about 800 ppm for copper. In some embodiments, the dopant levels are contemplated to be about 10-100 ppm for phosphorus and about 25-800 ppm copper.
- the dopant levels are contemplated to be about 10-70 ppm for phosphorus and about 25-500 ppm copper. In other embodiments, the dopant levels are contemplated to be about 20-60 ppm for phosphorus and about 40-600 ppm copper. In yet other embodiments, the dopant levels are contemplated to be about 30 - 60 ppm for phosphorus and about 300 - 500 ppm copper.
- the dopant materials could be added to the solder main constituents directly during casting. When small amounts of dopant are used, it may be desirable to make a master alloy and dilute that with undoped solder for better control over dopant concentration.
- the at least one solder material, the at least one phosphorus-based compound/dopant andor the at least one copper-based compound/dopant may be provided by any suitable method, including a) buying the at least one solder material, the at least one phosphorus-based compound/dopant and/or the at least one copper-based compound/dopant a supplier; b) preparing or producing at least some .of the at least one solder material, the at least one phosphorus-based compound/dopant and/or the at least one copper-based compound/dopant a supplier in house using chemicals provided by another source and/or c) preparing or producing the at least one solder material, the at least one phosphorus-based compound/dopant and/or the at least one copper-based compound/dopant a supplier in house using chemicals also produced or provided in house or at the location.
- Solder materials, spheres and other related materials described herein may also be used to produce solder pastes, polymer solders and other solder-based formulations and materials, such as those found in the following Honeywell International Inc.'s issued patents and pending patent applications, which are commonly-owned and incorporated herein in their entirety: US Patent Application Serial Nos. 09/851103, 60/357754, 60/372525, 60/396294, and 09/543628; and PCT Pending Application Serial No.: PCT/US02/14613, and all related continuations, divisionals, continuation-in-parts and foreign applications.
- Solder materials, coating compositions and other related materials described herein may also be used as components or to construct electronic-based products, electronic components and semiconductor components, contemplated embodiments, the alloys, disclosed herein may be used to produce BGA spheres, may be utilized in an electronic assembly comprising BGA spheres, such as a bumped or balled die, package or substrate, and may be used as an anode, wire or paste or may also be used in bath form.
- the spheres are attached to the package/substrate or die and reflowed in a similar manner as undoped spheres.
- the dopant slows the consumption rate for the EN coating and results in higher integrity (higher strength) joints.
- Electronic-based products can be "finished” in the sense that they are ready to be used in industry or by other consumers. Examples of finished consumer products are a television, a computer, a cell phone, a pager, a palm-type organizer, a portable radio, a car stereo, and a remote control. Also contemplated are “intermediate” products such as circuit boards, chip packaging, and keyboards that are potentially utilized in finished products.
- Electronic products may also comprise a prototype component, at any stage of development from conceptual model to final scale-up/mock-up.
- a prototype may or may not contain all of the actual components intended in a finished product, and a prototype may have some components that are constructed out of composite material in order to negate their initial effects on other components while being initially tested.
- the term "electronic component” means any device or part that can be used in a circuit to obtain some desired electrical action.
- Electronic components contemplated herein may be classified in many different ways, including classification into active components and passive components. Active components are electronic components capable of some dynamic function, such as amplification, oscillation, or signal control, which usually requires a power source for its operation. Examples are bipolar transistors, field-effect transistors, and integrated circuits.
- Passive components are electronic components that are static in operation, i.e., are ordinarily incapable of amplification or oscillation, and usually require no power for their characteristic operation. Examples are conventional resistors, capacitors, inductors, diodes, rectifiers and fuses.
- Electronic components contemplated herein may also be classified as conductors, semiconductors, or insulators.
- conductors are components that allow charge carriers (such as electrons) to move with ease among atoms as in an electric current.
- Examples of conductor components are circuit traces and vias comprising metals.
- Insulators are components where the function is substantially related to the ability of a material to be extremely resistant to conduction of current, such as a material employed to electrically separate other components
- semiconductors are components having a function that is substantially related to the ability of a material to conduct current with a natural resistivity between conductors and insulators. Examples of semiconductor components are transistors, diodes, some lasers, rectifiers, thyristors and photosensors.
- Power source components are typically used to power other components, and include batteries, capacitors, coils, and fuel cells.
- battery means a device that produces usable amounts of electrical power through chemical reactions.
- rechargeable or secondary batteries are devices that store usable amounts of electrical energy through chemical reactions.
- Power consuming components include resistors, transistors, ICs, sensors, and the like.
- Discreet components are devices that offer one particular electrical property concentrated at one place in a circuit. Examples are resistors, capacitors, diodes, and transistors. Integrated components are combinations of components that that can provide multiple electrical properties at one place in a circuit. Examples are ICs, i.e., integrated circuits in which multiple components and connecting traces are combined to perform multiple or complex functions such as logic.
- ICs i.e., integrated circuits in which multiple components and connecting traces are combined to perform multiple or complex functions such as logic.
- Example #1 40 ppm +/- 10 ppm for copper and phosphorus
- Example #2 500 ppm +/- 10 ppm for copper and 30 ppm +/- 10 ppm for phosphorus
- Example #3 200 ppm +/- 10 ppm for copper and 30 ppm +/- 10 ppm for phosphorus
- Example #4 200 ppm +/- 30 ppm for copper and 15 ppm +/- 5 ppm for phosphorus >
- Example #5 Undoped Sn-37Pb alloy (control)
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US50138403P | 2003-09-08 | 2003-09-08 | |
PCT/US2004/028837 WO2005027198A2 (en) | 2003-09-08 | 2004-09-07 | Doped alloys for electrical interconnects, methods of production and uses thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1665337A2 EP1665337A2 (de) | 2006-06-07 |
EP1665337A4 true EP1665337A4 (de) | 2007-10-31 |
Family
ID=34312272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP04783167A Withdrawn EP1665337A4 (de) | 2003-09-08 | 2004-09-07 | Dotierte legierungen für elektrische verbindungen, herstellungsverfahren und verwendungen dafür |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1665337A4 (de) |
JP (1) | JP2007533457A (de) |
KR (1) | KR20070027485A (de) |
CN (1) | CN1943030A (de) |
DE (1) | DE04783167T1 (de) |
TW (1) | TWI272152B (de) |
WO (1) | WO2005027198A2 (de) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10319888A1 (de) | 2003-04-25 | 2004-11-25 | Siemens Ag | Lotmaterial auf SnAgCu-Basis |
JP4993916B2 (ja) * | 2006-01-31 | 2012-08-08 | 昭和シェル石油株式会社 | Inハンダ被覆銅箔リボン導線及びその接続方法 |
US20130045131A1 (en) * | 2011-08-17 | 2013-02-21 | Honeywell International Inc. | Lead-Free Solder Compositions |
US10456871B2 (en) | 2014-08-27 | 2019-10-29 | Heraeus Deutschland GmbH & Co. KG | Solder paste |
HUE038343T2 (hu) | 2014-08-27 | 2018-10-29 | Heraeus Deutschland Gmbh & Co Kg | Eljárás forrasztott kapcsolat kialakítására |
US10421161B2 (en) | 2016-05-06 | 2019-09-24 | Honeywell International Inc. | High quality, void and inclusion free alloy wire |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2319039A (en) * | 1996-11-05 | 1998-05-13 | Samsung Electronics Co Ltd | Solder alloy |
JPH11267880A (ja) * | 1998-03-23 | 1999-10-05 | Ishikawa Kinzoku Kk | はんだ合金 |
US20030024733A1 (en) * | 2001-03-06 | 2003-02-06 | Hitachi Cable Ltd. | Lead-free solder, and connection lead and electrical component using said lead-free solder |
EP1402988A1 (de) * | 2002-09-25 | 2004-03-31 | Senju Metal Industry Co., Ltd. | Die Verwendung von Lötmetallen auf Nickel-plattierten stromlosen Oberflächen |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4853345A (en) * | 1988-08-22 | 1989-08-01 | Delco Electronics Corporation | Process for manufacture of a vertical DMOS transistor |
US6348740B1 (en) * | 2000-09-05 | 2002-02-19 | Siliconware Precision Industries Co., Ltd. | Bump structure with dopants |
-
2004
- 2004-09-07 WO PCT/US2004/028837 patent/WO2005027198A2/en active Search and Examination
- 2004-09-07 EP EP04783167A patent/EP1665337A4/de not_active Withdrawn
- 2004-09-07 KR KR1020067004601A patent/KR20070027485A/ko not_active Application Discontinuation
- 2004-09-07 DE DE04783167T patent/DE04783167T1/de active Pending
- 2004-09-07 JP JP2006525484A patent/JP2007533457A/ja active Pending
- 2004-09-07 CN CNA2004800255128A patent/CN1943030A/zh active Pending
- 2004-09-08 TW TW093127208A patent/TWI272152B/zh active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2319039A (en) * | 1996-11-05 | 1998-05-13 | Samsung Electronics Co Ltd | Solder alloy |
JPH11267880A (ja) * | 1998-03-23 | 1999-10-05 | Ishikawa Kinzoku Kk | はんだ合金 |
US20030024733A1 (en) * | 2001-03-06 | 2003-02-06 | Hitachi Cable Ltd. | Lead-free solder, and connection lead and electrical component using said lead-free solder |
EP1402988A1 (de) * | 2002-09-25 | 2004-03-31 | Senju Metal Industry Co., Ltd. | Die Verwendung von Lötmetallen auf Nickel-plattierten stromlosen Oberflächen |
Also Published As
Publication number | Publication date |
---|---|
EP1665337A2 (de) | 2006-06-07 |
DE04783167T1 (de) | 2007-01-04 |
TW200513337A (en) | 2005-04-16 |
JP2007533457A (ja) | 2007-11-22 |
CN1943030A (zh) | 2007-04-04 |
WO2005027198A3 (en) | 2005-09-22 |
KR20070027485A (ko) | 2007-03-09 |
TWI272152B (en) | 2007-02-01 |
WO2005027198A2 (en) | 2005-03-24 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20210167034A1 (en) | Chip arrangements | |
US20060113683A1 (en) | Doped alloys for electrical interconnects, methods of production and uses thereof | |
EP3062956B1 (de) | Bleifreie, silberfreie lotlegierungen | |
US20020155024A1 (en) | Lead-free solder compositions | |
US10500680B2 (en) | Solder alloy, solder ball, and solder joint | |
US20080118761A1 (en) | Modified solder alloys for electrical interconnects, methods of production and uses thereof | |
HU228577B1 (en) | Lead-free solders | |
WO2005102594A1 (ja) | はんだ及びそれを使用した実装品 | |
KR20140110926A (ko) | 접합 방법, 접합 구조체 및 그 제조 방법 | |
US20070138442A1 (en) | Modified and doped solder alloys for electrical interconnects, methods of production and uses thereof | |
US20040241039A1 (en) | High temperature lead-free solder compositions | |
WO2018168858A1 (ja) | はんだ材 | |
JP2005503926A (ja) | 高温無鉛はんだに適した改良された組成物、方法およびデバイス | |
KR101141762B1 (ko) | 반도체 패키지에 사용되는 구리 코어의 무연 솔더볼 및 이를 포함한 반도체 패키지 | |
WO2005027198A2 (en) | Doped alloys for electrical interconnects, methods of production and uses thereof | |
JP2003290974A (ja) | 電子回路装置の接合構造及びそれに用いる電子部品 | |
JP5699472B2 (ja) | はんだ材料とその作製方法、及びこれを用いた半導体装置の製造方法 | |
TWI795778B (zh) | 無鉛焊料合金、焊料球、焊膏及半導體裝置 | |
US7578966B2 (en) | Solders with intermetallic phases, solder bumps made thereof, packages containing same, and methods of assembling packages therewith | |
Sabri et al. | High-Temperature Lead-free Solder Materials and Applications | |
JP7032687B1 (ja) | はんだ合金、はんだペースト、はんだボール、はんだプリフォーム、およびはんだ継手 | |
US20220212293A1 (en) | Lead-free solder alloy, solder paste comprising the same, and semiconductor device comprising the same | |
US20240238914A1 (en) | Solder Alloy, Solder Paste, Solder Ball, Solder Preform, Solder Joint, Vehicle-Mounted Electronic Circuit, ECU Electronic Circuit, Vehicle-Mounted Electronic Circuit Device, and ECU Electronic Circuit Device | |
Hanim et al. | Intermetallic evolution for isothermal aging up to 2000 hours on sn-4ag-0.5 cu and sn-37pb solders with ni/au layers | |
Bang | Characteristics of interfacial reaction between |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
17P | Request for examination filed |
Effective date: 20060403 |
|
AK | Designated contracting states |
Kind code of ref document: A2 Designated state(s): DE FR GB |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 23/48 20060101AFI20060517BHEP |
|
EL | Fr: translation of claims filed | ||
DAX | Request for extension of the european patent (deleted) | ||
RBV | Designated contracting states (corrected) |
Designated state(s): DE FR GB |
|
DET | De: translation of patent claims | ||
A4 | Supplementary search report drawn up and despatched |
Effective date: 20070928 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H01L 23/485 20060101ALI20070924BHEP Ipc: H01L 23/48 20060101AFI20060517BHEP Ipc: H01L 23/488 20060101ALI20070924BHEP |
|
17Q | First examination report despatched |
Effective date: 20090205 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN |
|
18D | Application deemed to be withdrawn |
Effective date: 20101005 |