EP1554081A4 - Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechniken - Google Patents
Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechnikenInfo
- Publication number
- EP1554081A4 EP1554081A4 EP03708894A EP03708894A EP1554081A4 EP 1554081 A4 EP1554081 A4 EP 1554081A4 EP 03708894 A EP03708894 A EP 03708894A EP 03708894 A EP03708894 A EP 03708894A EP 1554081 A4 EP1554081 A4 EP 1554081A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- cleaning
- post
- aqueous
- combination
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004140 cleaning Methods 0.000 title 2
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
- H01L21/02065—Cleaning during device manufacture during, before or after processing of insulating layers the processing being a planarization of insulating layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02074—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a planarization of conductive layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning In General (AREA)
- Cleaning By Liquid Or Steam (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US215859 | 1988-07-06 | ||
US10/215,859 US20040029494A1 (en) | 2002-08-09 | 2002-08-09 | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
PCT/US2003/002643 WO2004014604A1 (en) | 2002-08-09 | 2003-01-28 | Post-cmp cleaning of semiconductor wafer surfaces using a combination of aqueous and cryogenic cleaning techniques |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1554081A1 EP1554081A1 (de) | 2005-07-20 |
EP1554081A4 true EP1554081A4 (de) | 2010-05-19 |
Family
ID=31494951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03708894A Withdrawn EP1554081A4 (de) | 2002-08-09 | 2003-01-28 | Post-cmp-reinigung von halbleiterwaferflüchen unter verwendung von wässrigen und kryogenen reinigungstechniken |
Country Status (8)
Country | Link |
---|---|
US (1) | US20040029494A1 (de) |
EP (1) | EP1554081A4 (de) |
JP (1) | JP3786651B2 (de) |
KR (1) | KR20050055699A (de) |
CN (1) | CN100377836C (de) |
AU (1) | AU2003212854A1 (de) |
TW (1) | TWI249783B (de) |
WO (1) | WO2004014604A1 (de) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6764386B2 (en) * | 2002-01-11 | 2004-07-20 | Applied Materials, Inc. | Air bearing-sealed micro-processing chamber |
US6852173B2 (en) * | 2002-04-05 | 2005-02-08 | Boc, Inc. | Liquid-assisted cryogenic cleaning |
US20050211950A1 (en) * | 2004-03-24 | 2005-09-29 | Cabot Microelectronics Corporation | Chemical-mechanical polishing composition and method for using the same |
US20060124155A1 (en) * | 2004-12-13 | 2006-06-15 | Suuronen David E | Technique for reducing backside particles |
JP4528677B2 (ja) | 2005-06-24 | 2010-08-18 | 株式会社東芝 | パターンド媒体の製造方法及び製造装置 |
JP4533809B2 (ja) | 2005-06-28 | 2010-09-01 | 株式会社東芝 | ディスクリートトラック媒体用基板の製造方法およびディスクリートトラック媒体の製造方法 |
US8252119B2 (en) * | 2008-08-20 | 2012-08-28 | Micron Technology, Inc. | Microelectronic substrate cleaning systems with polyelectrolyte and associated methods |
US8636913B2 (en) | 2011-12-21 | 2014-01-28 | HGST Netherlands B.V. | Removing residues in magnetic head fabrication |
DE102012204169A1 (de) * | 2012-03-16 | 2013-09-19 | Bayerische Motoren Werke Aktiengesellschaft | Verfahren und Vorrichtung zur maschinellen Reinigung |
SG195419A1 (en) * | 2012-06-05 | 2013-12-30 | Jcs Echigo Pte Ltd | Method and apparatus for cleaning articles |
JP2017011225A (ja) * | 2015-06-25 | 2017-01-12 | 株式会社フジミインコーポレーテッド | 研磨方法及び不純物除去用組成物並びに基板及びその製造方法 |
US9687885B2 (en) * | 2015-07-17 | 2017-06-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Multi-cycle wafer cleaning method |
CN106711018B (zh) * | 2015-11-16 | 2019-12-10 | 兆远科技股份有限公司 | 半导体晶圆表面加工方法 |
CN108672352A (zh) * | 2018-04-08 | 2018-10-19 | 苏州珮凯科技有限公司 | 半导体8寸晶圆制造薄膜制程的TiN工艺的Ti材质零部件再生方法 |
CN108704879A (zh) * | 2018-04-08 | 2018-10-26 | 苏州珮凯科技有限公司 | 半导体8寸晶元制造Endura IMP工艺的不锈钢零部件再生方法 |
US11628478B2 (en) | 2019-05-29 | 2023-04-18 | Applied Materials, Inc. | Steam cleaning of CMP components |
US11633833B2 (en) | 2019-05-29 | 2023-04-25 | Applied Materials, Inc. | Use of steam for pre-heating of CMP components |
TW202110575A (zh) | 2019-05-29 | 2021-03-16 | 美商應用材料股份有限公司 | 用於化學機械研磨系統的蒸氣處置站 |
CN111167791B (zh) * | 2020-01-10 | 2021-08-17 | 深圳仕上电子科技有限公司 | 有机蒸镀保护件的清洗方法 |
KR20220116324A (ko) | 2020-06-29 | 2022-08-22 | 어플라이드 머티어리얼스, 인코포레이티드 | 화학 기계적 연마를 위한 스팀 생성의 제어 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196472A (ja) * | 1992-12-22 | 1994-07-15 | Soltec:Kk | ウェットエッチング方法及びウェット洗浄方法 |
US5582650A (en) * | 1995-01-13 | 1996-12-10 | International Paper Company | Process for cleaning parts soiled or encrusted with polyester resin |
WO1998014985A1 (en) * | 1996-09-30 | 1998-04-09 | Verteq, Inc. | Wafer cleaning system |
US6004400A (en) * | 1997-07-09 | 1999-12-21 | Phillip W. Bishop | Carbon dioxide cleaning process |
WO2000061306A1 (de) * | 1999-04-12 | 2000-10-19 | Steag Microtech Gmbh | Verfahren und vorrichtung zum reinigen von substraten |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
Family Cites Families (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4050954A (en) * | 1976-03-25 | 1977-09-27 | International Business Machines Corporation | Surface treatment of semiconductor substrates |
JPH02301138A (ja) * | 1989-05-16 | 1990-12-13 | Matsushita Electron Corp | 半導体ウェーハの洗浄装置および洗浄方法 |
US5315793A (en) * | 1991-10-01 | 1994-05-31 | Hughes Aircraft Company | System for precision cleaning by jet spray |
EP0647170B1 (de) * | 1992-06-22 | 2000-05-17 | Minnesota Mining And Manufacturing Company | Verfahren und vorrichtung zum entfernen von abfallstoffen von optischen floppy-disk-medien |
US5344494A (en) * | 1993-01-21 | 1994-09-06 | Smith & Nephew Richards, Inc. | Method for cleaning porous and roughened surfaces on medical implants |
US5354384A (en) * | 1993-04-30 | 1994-10-11 | Hughes Aircraft Company | Method for cleaning surface by heating and a stream of snow |
JP3351082B2 (ja) * | 1994-01-14 | 2002-11-25 | ソニー株式会社 | 基板乾燥方法と、基板乾燥槽と、ウェーハ洗浄装置および半導体装置の製造方法 |
US5651723A (en) * | 1994-04-13 | 1997-07-29 | Viratec Thin Films, Inc. | Method and apparatus for cleaning substrates in preparation for deposition of thin film coatings |
DE19522525A1 (de) * | 1994-10-04 | 1996-04-11 | Kunze Concewitz Horst Dipl Phy | Verfahren und Vorrichtung zum Feinstreinigen von Oberflächen |
US5967156A (en) * | 1994-11-07 | 1999-10-19 | Krytek Corporation | Processing a surface |
US5931721A (en) * | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
US5651834A (en) * | 1995-08-30 | 1997-07-29 | Lucent Technologies Inc. | Method and apparatus for CO2 cleaning with mitigated ESD |
US5853962A (en) * | 1996-10-04 | 1998-12-29 | Eco-Snow Systems, Inc. | Photoresist and redeposition removal using carbon dioxide jet spray |
US5922136A (en) * | 1997-03-28 | 1999-07-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Post-CMP cleaner apparatus and method |
US5961732A (en) * | 1997-06-11 | 1999-10-05 | Fsi International, Inc | Treating substrates by producing and controlling a cryogenic aerosol |
US5935869A (en) * | 1997-07-10 | 1999-08-10 | International Business Machines Corporation | Method of planarizing semiconductor wafers |
US5837662A (en) * | 1997-12-12 | 1998-11-17 | Memc Electronic Materials, Inc. | Post-lapping cleaning process for silicon wafers |
US5928434A (en) * | 1998-07-13 | 1999-07-27 | Ford Motor Company | Method of mitigating electrostatic charge during cleaning of electronic circuit boards |
CN1310860A (zh) * | 1999-03-30 | 2001-08-29 | 皇家菲利浦电子有限公司 | 半导体晶片清洗装置和方法 |
JP2003500527A (ja) * | 1999-05-26 | 2003-01-07 | アシュランド インコーポレーテッド | 表面からの汚染物質の除去法及びそれに有用な組成物 |
US6230720B1 (en) * | 1999-08-16 | 2001-05-15 | Memc Electronic Materials, Inc. | Single-operation method of cleaning semiconductors after final polishing |
WO2001031691A1 (en) * | 1999-10-28 | 2001-05-03 | Philips Semiconductors, Inc. | Method and apparatus for cleaning a semiconductor wafer |
US6419566B1 (en) * | 2000-02-11 | 2002-07-16 | International Business Machines Corporation | System for cleaning contamination from magnetic recording media rows |
US6530823B1 (en) * | 2000-08-10 | 2003-03-11 | Nanoclean Technologies Inc | Methods for cleaning surfaces substantially free of contaminants |
US6425956B1 (en) * | 2001-01-05 | 2002-07-30 | International Business Machines Corporation | Process for removing chemical mechanical polishing residual slurry |
KR100421038B1 (ko) * | 2001-03-28 | 2004-03-03 | 삼성전자주식회사 | 표면으로부터 오염물을 제거하는 세정 장비 및 이를이용한 세정 방법 |
US6554909B1 (en) * | 2001-11-08 | 2003-04-29 | Saint-Gobain Ceramics & Plastics, Inc. | Process for cleaning components using cleaning media |
JP3958080B2 (ja) * | 2002-03-18 | 2007-08-15 | 東京エレクトロン株式会社 | プラズマ処理装置内の被洗浄部材の洗浄方法 |
US6852173B2 (en) * | 2002-04-05 | 2005-02-08 | Boc, Inc. | Liquid-assisted cryogenic cleaning |
US6949145B2 (en) * | 2002-04-05 | 2005-09-27 | Boc, Inc. | Vapor-assisted cryogenic cleaning |
CN1665609A (zh) * | 2002-04-05 | 2005-09-07 | 波克股份有限公司 | 流体辅助低温清洗 |
WO2003101762A1 (en) * | 2002-05-28 | 2003-12-11 | Advanced Technology Materials, Inc. | Process for cleaning and repassivating semiconductor equipment parts |
US6764385B2 (en) * | 2002-07-29 | 2004-07-20 | Nanoclean Technologies, Inc. | Methods for resist stripping and cleaning surfaces substantially free of contaminants |
DE112010005734B4 (de) | 2010-07-13 | 2018-01-11 | Aisin Seiki Kabushiki Kaisha | Rohrleitungseinheit für eine Brennstoffzelle, mit Rohrleitungseinheit ausgestattete Brennstoffzelleneinheit und Brennstoffzellensystem |
-
2002
- 2002-08-09 US US10/215,859 patent/US20040029494A1/en not_active Abandoned
-
2003
- 2003-01-28 AU AU2003212854A patent/AU2003212854A1/en not_active Abandoned
- 2003-01-28 KR KR1020057002096A patent/KR20050055699A/ko not_active Application Discontinuation
- 2003-01-28 WO PCT/US2003/002643 patent/WO2004014604A1/en not_active Application Discontinuation
- 2003-01-28 EP EP03708894A patent/EP1554081A4/de not_active Withdrawn
- 2003-01-28 CN CNB038194201A patent/CN100377836C/zh not_active Expired - Lifetime
- 2003-05-02 JP JP2003127199A patent/JP3786651B2/ja not_active Expired - Lifetime
- 2003-05-16 TW TW092113357A patent/TWI249783B/zh not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06196472A (ja) * | 1992-12-22 | 1994-07-15 | Soltec:Kk | ウェットエッチング方法及びウェット洗浄方法 |
US5582650A (en) * | 1995-01-13 | 1996-12-10 | International Paper Company | Process for cleaning parts soiled or encrusted with polyester resin |
WO1998014985A1 (en) * | 1996-09-30 | 1998-04-09 | Verteq, Inc. | Wafer cleaning system |
US6004400A (en) * | 1997-07-09 | 1999-12-21 | Phillip W. Bishop | Carbon dioxide cleaning process |
WO2000061306A1 (de) * | 1999-04-12 | 2000-10-19 | Steag Microtech Gmbh | Verfahren und vorrichtung zum reinigen von substraten |
US6296716B1 (en) * | 1999-10-01 | 2001-10-02 | Saint-Gobain Ceramics And Plastics, Inc. | Process for cleaning ceramic articles |
Non-Patent Citations (2)
Title |
---|
HOENIG S A ET AL: "USE OF DRY ICE AND VARIOUS SOLVENTS FOR REMOVING FLUX - CONTAMINANTS FROM PRINTED CIRCUIT BOARDS", PROCEEDINGS OF THE INTERNATIONAL SYMPOSIUM ON MICROELECTRONICS, XX, XX, vol. 1847, 19 October 1992 (1992-10-19), pages 29 - 34, XP000921023 * |
See also references of WO2004014604A1 * |
Also Published As
Publication number | Publication date |
---|---|
AU2003212854A1 (en) | 2004-02-25 |
CN100377836C (zh) | 2008-04-02 |
JP3786651B2 (ja) | 2006-06-14 |
TWI249783B (en) | 2006-02-21 |
JP2004079992A (ja) | 2004-03-11 |
EP1554081A1 (de) | 2005-07-20 |
CN1675028A (zh) | 2005-09-28 |
KR20050055699A (ko) | 2005-06-13 |
WO2004014604A1 (en) | 2004-02-19 |
US20040029494A1 (en) | 2004-02-12 |
TW200405447A (en) | 2004-04-01 |
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Ipc: H01L 21/02 20060101ALI20100415BHEP Ipc: B08B 3/08 20060101ALI20100415BHEP Ipc: B24B 1/00 20060101AFI20040301BHEP |
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