EP1506578A2 - Glass material for use at high frequencies - Google Patents

Glass material for use at high frequencies

Info

Publication number
EP1506578A2
EP1506578A2 EP03755118A EP03755118A EP1506578A2 EP 1506578 A2 EP1506578 A2 EP 1506578A2 EP 03755118 A EP03755118 A EP 03755118A EP 03755118 A EP03755118 A EP 03755118A EP 1506578 A2 EP1506578 A2 EP 1506578A2
Authority
EP
European Patent Office
Prior art keywords
layer
glass
glass material
substrate
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03755118A
Other languages
German (de)
French (fr)
Inventor
Jürgen LEIB
Dietrich Mund
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Schott AG
Original Assignee
Schott AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10222609A external-priority patent/DE10222609B4/en
Priority claimed from PCT/EP2003/003907 external-priority patent/WO2003088347A2/en
Application filed by Schott AG filed Critical Schott AG
Priority to EP03755118A priority Critical patent/EP1506578A2/en
Publication of EP1506578A2 publication Critical patent/EP1506578A2/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C14/00—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix
    • C03C14/006—Glass compositions containing a non-glass component, e.g. compositions containing fibres, filaments, whiskers, platelets, or the like, dispersed in a glass matrix the non-glass component being in the form of microcrystallites, e.g. of optically or electrically active material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/02—Surface treatment of glass, not in the form of fibres or filaments, by coating with glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
    • C03C17/34—Surface treatment of glass, not in the form of fibres or filaments, by coating with at least two coatings having different compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/083—Glass compositions containing silica with 40% to 90% silica, by weight containing aluminium oxide or an iron compound
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
    • C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C4/00—Compositions for glass with special properties
    • C03C4/12—Compositions for glass with special properties for luminescent glass; for fluorescent glass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/10—Glass or silica
    • H—ELECTRICITY
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    • H01L21/02161—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing silicon and at least one metal element, e.g. metal silicate based insulators or metal silicon oxynitrides the material containing more than one metal element
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31616—Deposition of Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/31604—Deposition from a gas or vapour
    • H01L21/31625—Deposition of boron or phosphorus doped silicon oxide, e.g. BSG, PSG, BPSG
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    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
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    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
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    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
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    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/003—Manufacturing lines with conductors on a substrate, e.g. strip lines, slot lines
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/467—Adding a circuit layer by thin film methods
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    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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    • C03C2214/00—Nature of the non-vitreous component
    • C03C2214/16—Microcrystallites, e.g. of optically or electrically active material
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24917—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including metal layer

Definitions

  • the invention relates generally to the field of high-frequency circuits, in particular the invention relates to a glass material which is suitable for producing high-frequency conductor structures on a substrate, and to a high-frequency substrate.
  • HTCC and LTCC materials at very high frequencies - generally above 40GHz - is limited by relatively high dielectric constants (DK) and loss angles (tan ⁇ ) in these frequency ranges.
  • DK dielectric constants
  • Tan ⁇ loss angles
  • the HTCC and LTCC ceramics have an unavoidable grain size which has a negative influence on the high-frequency properties and which leads to the fact that the conductor tracks integrated therein are one of the Grain have corresponding surface roughness. This surface roughness leads to increased line losses.
  • the substrates inevitably also shrink during sintering, which makes it difficult to precisely maintain the desired dimensions.
  • the invention is therefore based on the object of providing improved materials for conductor track systems, in particular with regard to the radio frequency properties, and of improving the radio frequency properties of radio-frequency conductor arrangements.
  • This task is already carried out in a surprisingly simple manner by a glass material for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements, a method for producing a component with a high-frequency conductor arrangement or high-frequency conductor track system, and a component with high-frequency conductor arrangement according to the independent Claims solved.
  • Advantageous refinements and developments are the subject of the respective subclaims.
  • a glass material according to the invention for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements has an applied layer, in particular with a layer thickness in the range from 0.05 ⁇ m to 5 mm, preferably in the range from 0.05 ⁇ m to 1 mm, in at least one frequency range above of 1 GHz
  • Loss factor tan ⁇ less than or equal to 70 * 10 ⁇ 4 .
  • LTCC and HTCC materials are valued, among other things, for their good encapsulation properties, which make it possible to use such a substrate as part of the housing of components.
  • the encapsulation properties of glass layers are even better because glass has an extremely low permittivity for most gases.
  • the glass material according to the invention is outstandingly suitable for high-frequency applications.
  • a glass material according to the invention can be applied as a layer, in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm at a frequency of 40 GHz particularly advantageously have a loss factor tan ⁇ less than or equal to 50 * 10 ⁇ 4 .
  • This low loss factor makes the glass material according to the invention excellently applicable for high-frequency applications even at very high frequencies in the microwave range.
  • the loss factor tan ⁇ of a layer with a layer thickness in the range between 0.05 ⁇ m to 5 mm, which was applied using a glass material according to the invention is even less than or equal to 30 * 10 ⁇ 4 at a microwave frequency of 40 GHz.
  • This loss factor is even lower than the loss factors of LTCC and HTCC substrates in the microwave range.
  • the material can be evaporated to deposit a layer.
  • insulation layers can be deposited on a substrate using a glass material according to the invention by PVD coating or by vapor deposition.
  • this is particularly advantageous since only a moderate temperature load on the base or the substrate occurs.
  • the deposition of glass layers by evaporation of the glass material for example from a target with the glass material according to the invention arranged at a distance from the surface to be coated, enables the production of very thin, homogeneous insulation layers.
  • the use of the glass material thus also allows an increase in the
  • Integration density of high-frequency components such as high-frequency substrates.
  • a glass material according to this embodiment of the invention can accordingly be evaporated so that a glass layer or glass-like layer forms on the surface of a substrate, which faces the evaporation source and is exposed to the steam emitted by the source.
  • This property of a glass material according to the invention is not fulfilled by all glass materials. With many glass materials, no glass layers or glass-like layers are formed, only non-glass-like oxide layers are deposited, which then generally no longer have good encapsulation and / or high-frequency properties.
  • Glasses which comprise an at least binary material system are particularly suitable as steam glasses, or glass materials which can be vaporized and deposited again as glass-like or glass layers. Glass layers which have been deposited by evaporation of such glasses have particularly good encapsulation and high-frequency properties due to their low defect level.
  • a glass material according to the invention can be evaporated by electron beam evaporation.
  • electron beam evaporation a very small source spot can be created on a target with the glass material at the point of impact of the electron beam, on which the power of the electron beam is concentrated.
  • Electron beam evaporation can also achieve high deposition rates on the substrate to be coated.
  • the glass material can be processed easily, for example to form a glass target for electron beam evaporation, it is advantageous if the glass material has a processing temperature of less than 1300 ° C.
  • Processing temperature is generally understood to mean the temperature at which the viscosity of the glass is 10 4 dPas.
  • the glass material as an applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm, in at least one frequency range above 1 GHz, has a relative dielectric constant ⁇ R less than or equal to five having .
  • the glass material as an applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm, also in the microwave range at a frequency of 40 GHz, a relative dielectric constant ⁇ R less than or equal to 5, in particular a relative dielectric constant ⁇ R of 4 Have ⁇ 0.5.
  • the glass material as the applied layer in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range from 20 ° C. to 300 ° C., has a coefficient of thermal expansion ⁇ 2 o- 3 oo in the range is from 2.9xl0 "6 K " 1 to 3.5xl0 ⁇ 6 K "1.
  • This coefficient of expansion is well adapted, among other things, to the coefficient of expansion of silicon or Borofloat ® 33 glass. For example, temperature stresses when using silicon or Borofloat ® 33 glass as substrate materials can be largely avoided.
  • the glass material in particular, is applied as an applied layer a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range from 20 ° C. to 300 ° C.
  • a glass material which, in order to reduce temperature stresses when used as an insulation layer in silicon substrates as an applied layer, in particular with a layer thickness in the range between 0.05 ⁇ m to 5 mm in a temperature range of 20 ° C. up to 300 ° C has a coefficient of thermal expansion that deviates from the coefficient of thermal expansion of the substrate material, for example silicon, less than 1 ⁇ 10 6 K 1
  • the glass layer is as resistant as possible to the action of acids or alkalis.
  • One embodiment of the invention therefore provides a glass material which, as an applied layer, is acid-resistant in accordance with acid resistance class ⁇ 2.
  • the glass material as an applied layer is alkali-resistant according to alkali resistance class ⁇ 3.
  • Glass materials according to the invention preferably have the following composition in percent by weight:
  • T VA 1207 ° C
  • This particularly suitable glass is also referred to below as glass G018-189.
  • a further embodiment produces a suitable glass with the composition 84% by weight SiO 2 , 11% by weight B 2 0 3 , ⁇ 2% by weight A1 2 0 3 , 2.0% by weight Na 2 0 and in each case approximately 0.3% by weight Li 2 0 and K 2 0 the following properties were measured:
  • This glass which is also particularly suitable, is also referred to below as glass 8329.
  • compositions given above relate to the glass material before application.
  • the layer that was applied using such a glass material can also have a different composition.
  • the composition in the layer can change compared to the glass material according to the invention if the layer is deposited by vapor deposition and the components of the glass material have different vapor pressures.
  • a glass material as described above can be used particularly advantageously for producing an insulation layer for a high-frequency conductor structure or a high-frequency substrate.
  • a component with a high-frequency conductor arrangement can advantageously comprise the steps:
  • Component can be manufactured with high-frequency conductor arrangement, which
  • a substrate with at least one contacting area, on at least one side of the substrate a glass layer which has at least one opening with a via, and the via is in electrical contact with the contacting area, and at least one conductor structure on the glass layer which the via is in contact.
  • a component is not only understood to be an electronic component. Also a coated substrate with high frequency conductor arrangement, respectively
  • High-frequency conductor system which then serves as a whole as a carrier and for connecting further components, is understood as a component in the sense of this invention. Similar components with carrier material and high-frequency conductor system are generally also referred to as high-frequency substrates.
  • Silicon, ceramic, glass or even plastic are suitable as substrate materials.
  • Composite materials for example glass-plastic laminates, in particular also with integrated conductor arrangements can also be used.
  • other semiconductor materials such as gallium arsenide can also be used, for example.
  • Silicon, ceramics and glass as substrate material are also special due to their vapor-deposited glass very similar coefficients of thermal expansion.
  • the glass layer is particularly preferably deposited by evaporating glass material according to the invention.
  • the glass layer it is also conceivable for the glass layer to be deposited on the surface of the substrate to be coated, for example by sputtering, from a target with glass material according to the invention.
  • the glass layer is vapor-deposited by means of plasma ion-assisted vapor deposition (PIAD).
  • PIAD plasma ion-assisted vapor deposition
  • An ion beam is directed onto the surface to be coated during the vapor deposition process. This leads to a further compression and a reduction in the defect density.
  • one or more passive electrical components can also be applied to the glass layer and with the
  • Conductor structure brought into contact or connected For example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element can be applied to the glass layer as a passive electrical component.
  • a particularly advantageous embodiment of the invention provides for the production of a three-dimensional or multilayer conductor system on a substrate.
  • the steps of depositing a structured glass layer and applying at least one conductor structure are carried out several times.
  • the individual glass layers and / or conductor structures can be structured differently in order to form a three-dimensional conductor system, in particular also with passive components that are based on one or more Layers of the multilayer conductor system are formed.
  • a subsequently applied conductor structure can advantageously be connected or brought into contact with a contact area of a previously applied conductor structure, so that an electrical connection is created between two layers of the conductor arrangement and the layers can be electrically networked with one another.
  • a component can be formed which has a multilayer conductor arrangement with at least two vapor-deposited glass layers and a conductor structure applied thereon, a conductor structure on a first glass layer being in electrical contact with a conductor structure on a second glass layer via a plated-through hole.
  • such a structured intermediate layer can also be produced directly, for example by printing.
  • a further development of the method also provides for a conductive, opposite to, before the vapor deposition of the glass layer on the at least one contacting area
  • Intermediate layer is photolithographically structured together with a layer of conductive material, the layer of conductive material together with the intermediate layer being removed from the regions which surround the contacting region.
  • the glass layer can then advantageously be evaporated so that its thickness substantially corresponds to the thickness of the applied conductive material, so that an essentially flat surface is present after the glass layer has been lifted off over the contact area.
  • a glass layer with at least one opening is deposited directly above a contact area or advantageously offset laterally, and the at least one opening in the glass layer is then filled with conductive material.
  • the substrate is kept at a temperature between 50 ° C. and 200 ° C., preferably between 80 ° C. and 120 ° C., during the vapor deposition of the glass layer.
  • the moderate heating is also advantageous for the morphology of the glass layers, it being possible to produce particularly pore-free glass layers at these substrate temperatures.
  • a base pressure in the Aufdampfhimmmer which is in vapor deposition of the glass layer is at most in the range of 10 "4 mbar, preferably in the range of 10 -5 mbar or less retained.
  • the surface of the substrate to be coated is one
  • the glass layer to be vapor-deposited with a deposition rate of at least 0.5 ⁇ m layer thickness per minute.
  • This high deposition rate can be achieved without disadvantage for the layer quality of the glass layers and allows a short manufacturing time.
  • other vacuum deposition processes such as cathode sputtering, only achieve deposition rates of a few nanometers per minute.
  • the application of the conductor structure can also advantageously include the steps of applying a negatively structured intermediate layer and then depositing include conductive material on the base coated with the intermediate layer.
  • the base comprises the substrate and / or the substrate with one or more applied glass layers and conductor structures arranged thereon.
  • This intermediate layer can also be structured photolithographically or produced by structured printing.
  • the substrate itself can already have a conductor structure, for example in the form of conductor tracks. These can also advantageously be applied directly to the substrate before the step of depositing the structured glass layer.
  • a contacting area can then be provided on a conductor track applied directly on the substrate, which contact area is then brought into contact with a conductor structure subsequently applied on an insulating glass layer.
  • a multilayer, high-frequency conductor system, or a multilayer, high-frequency conductor arrangement can be created.
  • the substrate comprises a semiconductor substrate with one or more active semiconductor regions on a first side of the substrate.
  • the substrate can comprise a semiconductor integrated circuit.
  • the at least one conductor structure can be applied with a Connection point of the active semiconductor region are connected so that there is electrical contact with the conductor structure and thus also with the conductor arrangement.
  • the path has been disputed to monolithically integrate individual semiconductor components into cavities in the ceramic, so that the ceramic is the carrier for the semiconductor components.
  • the invention also enables the reverse route, in which the conductor arrangement is applied directly to a chip and thus serves as a carrier for the conductor arrangement.
  • a further embodiment of the invention provides a substrate which has at least one plated-through hole.
  • the at least one conductor structure can then be connected to the via through the substrate during application.
  • This embodiment of the invention makes it possible, among other things, to connect structures on one side of the substrate with a high-frequency conductor arrangement on a further side of the substrate.
  • a further, final glass layer can additionally be deposited by vapor deposition, which covers the layers previously applied.
  • at least one through-connection can advantageously be created through the final glass layer.
  • This glass layer can be produced in the same way as the production of the underlying glass layers of the conductor arrangement.
  • This further layer can serve as an insulation layer which insulates the conductor arrangement from the outside.
  • the substrate is coated in the wafer composite, so that a large number of components are processed simultaneously.
  • vapor-deposited glass layers are used as insulation layers.
  • the glass material according to the invention can also be used in particular for the methods and components described in this application, the disclosure content of this application in this regard being hereby expressly incorporated by reference.
  • a glass material according to the invention for the production of an insulation layer for a high-frequency conductor structure or a high-frequency substrate is generally considered in order to improve the high-frequency properties of such elements.
  • Fig. 1 is a sectional view of a first
  • FIG. 2 A sectional view of another
  • FIG. 3A with the aid of cross-sectional views the steps of a to 3G embodiment of the method according to the invention
  • FIG. 4A a variant of the method steps shown in FIGS
  • Fig. 8 is a schematic layer structure for HF
  • FIG. 10 shows a layer structure of buried coplanar lines CPW
  • Fig. 11 is a listing of properties of measured
  • FIG. 12 the amount of the scattering parameters and their up to 14 phase profile of the sample G1ACPW2 2 (glass 8329)
  • 15 shows the amount of the scattering parameters and their up to 17 phase profile of the sample G1ACPW3_2 (glass 8329)
  • FIG. 1 shows a simplified sectional illustration of a first embodiment of a component according to the invention, designated as a whole by reference number 10, having a substrate 1 with a first side 3 and a side 5 opposite to side 3 and a side 5 arranged on the substrate on the first side 3, as a whole with the reference number 4 high-frequency conductor arrangement.
  • a layer 6 with conductor structures 61-64 is arranged on the substrate 1.
  • the conductor structures 61-64 can be conductor tracks, for example.
  • some of the conductor structures 61-64 can also be designed as passive electrical components.
  • Contacting regions 71-74 are defined on these conductor structures 61-64 on the first side 3 of the substrate 1.
  • an insulating glass layer 9 is then deposited in a structured manner by vapor deposition on the first side 3 of the substrate, so that it has openings 8 above the contacting areas 71-74. These openings 8 are filled with a conductive material 19, so that the openings in connection with the conductive fillings each create vias through the insulating glass layer 9.
  • a layer 11 with further conductor structures 111, 112, 113 is applied to the glass layer 9. The conductor structures 111, 112, 113 are each in contact with at least one of the plated-through holes, so that an electrical connection of the conductor structures 111, 112, 113 to the conductor structures 61 - 64 of layer 6.
  • the substrate thus has a multilayer conductor arrangement, the layers 6 and 11 of which are separated from one another by an insulating glass layer 9 with excellent high-frequency properties.
  • the glass layer 9 can have a thickness in the range from 0.05 ⁇ m to 5 mm, glass layers produced by vapor deposition expediently having a thickness in the range from 0.05 ⁇ m to 1 mm.
  • a further, final vapor-deposition glass layer 13 is deposited on the layer 11 with the conductor structures 111, 112, 113 and serves as external insulation of the conductor structures 111, 112, 113.
  • Solder beads 17 are additionally applied to the plated-through holes 15 in order to attach and connect the component 10 to an SMT circuit board, for example.
  • a target with glass material according to the invention is preferably evaporated by electron beam evaporation and deposited on the substrate 1.
  • a glass according to the invention is used in particular as the glass material for producing the insulation layers 9, 13, which, as an applied layer with a layer thickness in the range between 0.05 ⁇ m to 5 mm, has a loss factor tan ⁇ less than or equal to 50 * 10 in at least one frequency range above 1 GHz ⁇ 4 .
  • the above-described glasses 8329 and in particular G018-189 are particularly suitable for this due to its excellent high-frequency properties.
  • Fig. 2 shows a sectional view of another
  • Embodiment of a component 10 according to the invention has a high-frequency conductor arrangement 41 and 42 on two opposite sides 3 and 5, respectively.
  • the conductor arrangements 41 and 42 are constructed analogously to the conductor arrangement 4 of the embodiment shown in FIG. 1.
  • the conductor arrangements 41 and 42 each have a glass layer 9 made of vapor-deposited glass with openings in which conductive material is used
  • Through-contacting is present and in electrical contact with contacting areas arranged under the openings.
  • Layers 6 with conductor structures are arranged on the glass layers 9 of the conductor arrangements 41 and 42, which are in turn in contact with the plated-through holes.
  • the conductor structures on the glass layer 9 are covered with further, final vapor-deposition glass layers 13, in which plated-through holes 15 are provided for the connection of the component.
  • 3A to 3G show, using cross-sectional views, the steps for producing a component according to the invention in accordance with an embodiment of the method according to the invention.
  • FIG. 3A shows a substrate 1 after a first processing step, in which a layer 6 with conductor structures 61-64, such as in particular of suitable conductor tracks, is produced on the side to which the high-frequency conductor arrangement is applied.
  • a layer 6 with conductor structures 61-64 such as in particular of suitable conductor tracks, is produced on the side to which the high-frequency conductor arrangement is applied.
  • these can For example, contact points of electronic components of the substrate, not shown in FIG. 3A, or connect to such contact points.
  • a glass layer is deposited, which has openings over contact areas 71-74 of the underlying surface.
  • a structured intermediate layer with structures 21, which cover the respective contacting regions 71-74 is applied in a further step. This is preferably accomplished by photolithographically structuring a suitable photoresist coating. Alternatively, however, another method, such as printing on the surface, can be used to produce the structures 21.
  • a glass layer 9 is evaporated, which covers both those with the structures 21 of the intermediate layer
  • the thickness of the glass layer 9 is preferably less than the thickness of the structured intermediate layer.
  • the intermediate layer is then removed, with the regions 90 of the glass layer 9 which cover the structures 21 of the intermediate layer or which are located on the structured intermediate layer being lifted off as well.
  • FIG. 3D shows the substrate after this step, which accordingly now has a glass layer 9 with openings 8 above the contacting areas 71-74 of the surface below.
  • the openings 8 can then, as shown in FIG. 3E, be filled with a conductive material 19, for example.
  • Layer 11 with conductor structures 111, 112, 113 and passive components 23 are applied, as shown in FIG. 3F.
  • the components 23 can comprise, for example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element.
  • Capacitors and coils can in particular also be realized by means of conductor structures of layers lying one above the other and insulated from one another by a vapor deposition glass layer. For example, a conductor structure of the layer 6 and a further conductor structure of the layer 11 lying above it can be used.
  • the conductor structures can be applied, for example, by applying a further, negatively structured intermediate layer and the deposition of electrically conductive material, the conductor structures 111, 112, 113 coming into contact with the conductive material 19 in the openings 8, so that an electrical connection is also made , or an electrical contact with the respective associated contacting areas 71 - 74 arises.
  • the conductor structures can also have structures with different conductive materials or also semiconductor materials, for example by applying the conductor structures in several steps using different materials. This allows further functionalities to be integrated into the conductor arrangement, for example by creating semiconductor-metal contacts or thermoelectric contacts.
  • the conductor structures 19 can be produced by galvanic deposition so that the deposited material, starting from the contacting areas 71-74, first fills the openings 8 and then continues to grow on the surface of the glass layer 9, where it forms the conductor structures, and also, if provided, can form the passive components 23.
  • the conductor structures 111, 112, 113 can also be produced by vapor deposition or sputtering, the contacting regions 71-74 and edges of the openings 8 also being able to be vapor-coated or coated, so that the respective conductor structures are in electrical contact with the contacting regions 71-74 come.
  • the intermediate layer can then be removed again, wherein conductive material deposited on the intermediate layer is lifted off and the provided conductor structures and possibly applied components also remain on the surface of the glass layer 9.
  • Contacting areas by vapor deposition using glass material according to the invention, such as, for example, glass G018-189 on the substrate and the application of conductor structures, can then be repeated to produce further layers of the conductor arrangement.
  • a subsequently applied conductor structure is brought into contact with a contact area of a previously applied conductor structure.
  • an intermediate layer with structures 21 is again applied to the provided contacting areas 75, 76 of the surface of the coated substrate 1, the contacting areas expediently being applied to applied conductor structures, or else Vias.
  • a further insulating glass layer 91 with vias is then produced through openings in the glass layer 91 above the contacting areas 75, 76, the production taking place analogously to the method steps described with reference to FIGS. 3C to 3E.
  • FIGS. 3B to 3E show a variant of the method steps of the method according to the invention shown with reference to FIGS. 3B to 3E.
  • This variant of the method according to the invention is based on applying a conductive material, which is adjacent to the respective contacting area and which is covered by the structure of the intermediate layer, on the contacting areas before the vapor deposition of the glass layer. This conductive material then forms the via.
  • a conductive layer 25 is applied and a photostructurable intermediate layer 27 is applied thereon, as is illustrated with reference to FIG. 4A.
  • FIG. 4B shows the substrate after a photolithographic structuring of the intermediate layer 27.
  • the layer is structured in such a way that structures 21 remain which cover the contacting areas 71-74 provided.
  • the conductive layer 25 is removed from the uncovered regions surrounding the contacting regions 71-74. This can be done in a customary manner, for example by etching. Accordingly, the contacting areas 71-74 are covered by a conductive material which is raised or protrudes from areas adjacent to the respective contacting area and which is covered in each case by a structure 21 of the intermediate layer 27. Then, as shown in FIG.
  • the insulating glass layer 9 is evaporated by evaporating glass material according to the invention, the thickness of the glass layer 9 preferably being selected so that it approximately corresponds to the thickness of the raised conductive material 19.
  • the structures 21 of the intermediate layer are removed, for example by using a suitable solvent, and the areas 90 of the glass layer 9 which cover the structures 21 are lifted off. In this way, a substrate with a glass layer is obtained, which has openings above the respective contacting areas and plated-through holes in the form of the conductive material located in the openings. This processing state is shown in Fig. 4E.
  • the surface of the conductive material and the glass layer 9 are approximately at the same height, so that a flat surface is obtained.
  • the method can then be continued as explained with reference to FIGS. 3F to 3G, the second glass layer 91 in FIG. 3G and any further glass layers with plated-through holes also being able to be produced in the same or similar manner as in FIG. 4A until 4E was explained.
  • the components 10 are produced by coating substrates in the wafer composite.
  • 5 to 7 show various embodiments of coated wafers 2, the components being obtained by separating individual substrates 1 from the wafer.
  • FIG. 5 shows an embodiment of the invention in which a semiconductor wafer 2 with a sequence of glass or Conductor layers have been provided. Silicon is preferably used as the wafer material for this purpose, since this material has a temperature expansion coefficient which corresponds very well with the vapor deposition glass.
  • the individual substrates 1 are after
  • the coating in the wafer assembly and the production of the processing state shown in FIG. 5 are separated by cutting along the intended separating axes 29 in order finally to obtain components 10 with a high-frequency conductor structure.
  • the wafer 2 has on a first side 3 individual active semiconductor regions 33 which are connected to connection points 35.
  • the conductor arrangement 4 is arranged on a second side 5 of the wafer 2 or the substrates 1 of the wafer 2, which lies opposite the first sides with the active semiconductor regions 33.
  • the conductor arrangement 4 is shown in a simplified manner for the sake of clarity, with all conductor structures being designated by reference number 100 here, among other things.
  • the individual layers of the conductor arrangement 4 can advantageously be produced as explained with reference to FIGS. 3A to 3G and / or FIGS. 4A to 4E.
  • the conductor arrangement 4 shown in FIG. 5 is also made in multiple layers, with the steps of depositing a structured glass layer and applying
  • Conductor structures 100 are accordingly carried out several times, and a subsequently applied conductor structure 100 is brought into contact with a contact area of a previously applied conductor structure 100.
  • Through-contacts 37 are also inserted into the wafer 2 through the substrates 1, which are electrically connected to the connection points 35.
  • the plated-through hole can preferably be produced by etching etching pits in the wafer from the second side 5 to the preferably metallic connection points 35, which simultaneously act as an etching stop.
  • a passivation layer 39 is then produced on the walls of the etching pit and the etching pit is filled with conductive material 43.
  • the conductive material 43 of the plated-through holes 37, which is exposed on the side 3, serves as a contact area for conductor structures 100 of the conductor arrangement 4.
  • Contacting areas are used for some of the conductor structures 100 of the conductor arrangement 4. If these conductor structures 100 are brought into contact with the contacting areas when they are applied to the previously deposited glass layer 9, the conductor structures are accordingly also electrically connected to the connection points 35 on the first side of the substrates 1. In this way, the active semiconductor regions 33 can then be supplied via the conductor arrangement and electrical signals from the active semiconductor regions can be applied to the conductor structures 100 of the conductor arrangement 4.
  • FIG. 6 shows a further embodiment of the invention, substrates which have also been connected in the wafer composite being coated with a conductor arrangement 4. This embodiment of the invention is similar to the embodiment shown in FIG. 5.
  • a semiconductor wafer 2 with active semiconductor regions 33, which are assigned to individual substrates 1, is also used in the embodiment shown in FIG. 6.
  • the connection points 35 of the active semiconductor regions 33 are connected to conductor structures 100.
  • conductor arrangement 4 is evaporated on the first side 3 of the substrates 1, on which the active semiconductor regions 33 are also arranged.
  • the plated-through holes 15 in the lowermost glass layer 9 of the conductor arrangement 4 are applied directly to the contact points 35, the
  • contact points 35 form the contacting areas of the substrates 1 for the corresponding conductor structures 100 on the first glass layer 9.
  • the components 10, which are obtained by separating from the coated wafers 2, as are shown by way of example in FIGS. 5 and 6, can be used, for example, as high-frequency transmission / reception modules for frequencies above 10 GHz, in particular for frequencies in the region around 40GHz or higher.
  • FIG. 7 shows yet another embodiment of substrates 1 which, according to the invention, have been provided with a high-frequency conductor arrangement 4 in the wafer assembly.
  • the conductor arrangement 4 with the glass layers 9, 91, 92, 93, 13 and the conductor structures 100 is here applied to a wafer, the substrates 1 of which are also
  • the components 10 with substrates 1 and conductor arrangements 4 serve after the separation from the wafer as a high-frequency rewiring substrate for further components that can be connected to the external contact points of the components 10.
  • the external contact points are provided with soldering beads 17, for example, so that further components in SMT technology can be attached and connected.
  • the substrates 1 have no active components here.
  • the substrate wafer 2 can also be made from insulating material, such as glass or plastic. A particularly well-suited glass as material for the wafer or the substrates 1 of the components 10 is
  • Borofloat ® glass which has a thermal expansion coefficient that almost matches the preferred vapor deposition glass.
  • Fig. 8 shows that for the characterization of the HF
  • the scattering parameters S12 and S21 are also used as transmission loss and the scattering parameters Sll and S22 referred to as reflection loss.
  • Attenuation values of less than -2 dB for the scattering parameters S12 and S21 can be recognized on the basis of the measured values shown in FIG. 13 up to a frequency of 50 GHz.
  • the scattering parameters S21 and S12 represent the values of the transmission of the electrical signal at the respective frequency. Up to a frequency of 50 GHz can be recognized.
  • the linear phase profile of the scattering parameter S21 indicates a very low dispersion up to a frequency of 50GHz.
  • the measured values shown with reference to FIGS. 12 to 14 can also be verified during measurements on further samples, the

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Abstract

The aim of the invention is to improve the high-frequency characteristics of high-frequency substrates or high-frequency conductor assemblies. To achieve this, the invention provides a glass material for producing insulation layers for high-frequency conductor assemblies. Said material is applied as a layer, in particular with a layer thickness ranging between 0.05 mu m and 5 mm, with a tangent of loss angle tan delta in at least one frequency range above 1 GHz of less than or equal to 70*10<-4>.

Description

Glasmaterial für HochfrequenzanwendungenGlass material for high frequency applications
Beschreibungdescription
Die Erfindung betrifft allgemein das Gebiet der Hochfrequenzschaltungen, insbesondere betrifft die Erfindung ein Glasmaterial welches zur Herstellung von hochfrequenztauglichen Leiterstrukturen auf einem Substrat geeignet ist, sowie ein Hochfrequenz-Substrat.The invention relates generally to the field of high-frequency circuits, in particular the invention relates to a glass material which is suitable for producing high-frequency conductor structures on a substrate, and to a high-frequency substrate.
Der Trend in der Halbleiterindustrie geht bekanntermaßen zu immer höheren Datenübertragungsraten. Bei Frequenzen im Gigaherz-Bereich kommt es dabei verstärkt zur Signaldämpfung an den Zu- und Ableitungssystemen. Für derartige Systeme werden bisher vor allem bedruckte keramische (HTCC) und glaskeramische (LTCC) ultilayerschichten eingesetzt, die nach Bedruckung mit leitfähigen Schichten, Laminierung und Sinterung eine dreidimensionale oder mehrschichtige Verdrahtung für eine Hochfrequenz-Schaltung realisieren. Außerdem kommen organische Multilayerschichten zum Einsatz, die nicht hermetisch sind. Bei hohen Frequenzen nehmen jedoch bei derartigen Verdrahtungen die Übertragungsverluste durch die Dämpfung in den Leiternbahnen zu. Die Anwendung von HTCC- und LTCC-Materialien bei sehr hohen Frequenzen -im allgemeinen oberhalb von 40GHz- wird durch relativ hohe Dielektrizitätskonstanten (DK) und Verlustwinkel (tanδ) in diesen Frequenzbereichen begrenzt. Die HTCC-und LTCC- Keramiken weisen eine unvermeidbare Körnung auf, welche die Hochfrequenzeigenschaften negativ beeinflussen und die dazu führt, daß die darin integrierten Leiterbahnen eine der Körnung entsprechende Oberflächenrauhigkeit haben. Diese Oberflächenrauhigkeit führt zu erhöhten Leitungsverlusten.As is well known, the trend in the semiconductor industry is towards ever higher data transmission rates. At frequencies in the gigahertz range, there is an increased signal attenuation at the supply and discharge systems. For such systems, printed ceramic (HTCC) and glass-ceramic (LTCC) ultilayer layers have so far been used, which after printing with conductive layers, lamination and sintering realize a three-dimensional or multi-layer wiring for a high-frequency circuit. Organic multilayer layers that are not hermetic are also used. At high frequencies, however, the transmission losses due to the attenuation in the conductor tracks increase with such wiring. The use of HTCC and LTCC materials at very high frequencies - generally above 40GHz - is limited by relatively high dielectric constants (DK) and loss angles (tanδ) in these frequency ranges. The HTCC and LTCC ceramics have an unavoidable grain size which has a negative influence on the high-frequency properties and which leads to the fact that the conductor tracks integrated therein are one of the Grain have corresponding surface roughness. This surface roughness leads to increased line losses.
Eine weitere Ursache für die hohe Dämpfung in bekannten Hochfrequenzleiter-Substraten ist unter anderem in der Aufbringung der Leiterbahnen, üblicherweise mittels Dickfilmtechnik, insbesondere mittels Siebdruck begründet. Die mit dieser Technik hergestellten Leiterbahnen weisen eine große Inhomogenität und Rauhigkeit der Leiterbahnkonturen auf. Die Inhomogenitäten der Leiterbahnen wirken dabei wie Antennen, so daß es zu großen Abstrahlungsverlusten kommt.Another reason for the high attenuation in known high-frequency conductor substrates is, among other things, the application of the conductor tracks, usually by means of thick film technology, in particular by means of screen printing. The conductor tracks produced with this technology have a large inhomogeneity and roughness of the conductor track contours. The inhomogeneities of the conductor tracks act like antennas, so that there are large radiation losses.
Ferner kommt es auch beim Sintern zwangsläufig zu einer Schrumpfung der Substrate, was ein genaues Einhalten von gewünschten Abmessungen erschwert.Furthermore, the substrates inevitably also shrink during sintering, which makes it difficult to precisely maintain the desired dimensions.
Neuere Entwicklungen gehen dahin, die nachteilige Dickfilmtechnik durch Aufdampfen oder Aufsputtern der Leiterbahnen mittels verschiedener PVD-Verfahren zu ersetzen. Allerdings stellt das notwendige Sintern der HTCC- oder LTCC- Materialien für die Herstellung des Verdrahtungsstapels bei den bisherigen Verfahren immer noch ein großes Problem dar. So erfordert LTCC-Keramik zur Sinterung eine Temperatur von mindestens 950 °C. Für die Sinterung von HTCC-Keramiken ist sogar eine Temperatur von 1500 °C erforderlich. Bei diesen Temperaturen kommt es zu Veränderungen der Leiterbahnstrukturen und die Auswahl der Leiterbahn- Materialien ist eingeschränkt.Recent developments have been to replace the disadvantageous thick film technology by vapor deposition or sputtering on the conductor tracks using various PVD processes. However, the sintering of the HTCC or LTCC materials required for the production of the wiring stack is still a major problem with the previous methods. For example, LTCC ceramics require a temperature of at least 950 ° C. for sintering. A temperature of 1500 ° C is even required for the sintering of HTCC ceramics. At these temperatures, the conductor structures change and the choice of conductor materials is restricted.
Der Erfindung liegt daher die Aufgabe zugrunde, insbesondere bezüglich der Hochfrequenzeigenschaften verbesserte Materialien für Leiterbahn-Systeme bereitzustellen und die Hochfrequenzeigenschaften von Hochfrequenz-Leiteranordnungen zu verbessern. Diese Aufgabe wird bereits in höchst überraschend einfacher Weise durch ein Glasmaterial zur Herstellung von Isolationsschichten für Hochfrequenz-Substrate oder Hochfrequenz-Leiteranordnungen, ein Verfahren zur Herstellung eines Bauelements mit Hochfrequenz-Leiteranordnung oder Hochfrequenz-Leiterbahnsystem, sowie ein Bauelement mit Hochfrequenz-Leiteranordnung gemäß den unabhängigen Ansprüchen gelöst. Vorteilhafte Ausgestaltungen und Weiterbildungen sind Gegenstand der jeweiligen Unteransprüche .The invention is therefore based on the object of providing improved materials for conductor track systems, in particular with regard to the radio frequency properties, and of improving the radio frequency properties of radio-frequency conductor arrangements. This task is already carried out in a surprisingly simple manner by a glass material for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements, a method for producing a component with a high-frequency conductor arrangement or high-frequency conductor track system, and a component with high-frequency conductor arrangement according to the independent Claims solved. Advantageous refinements and developments are the subject of the respective subclaims.
Ein erfindungsgemäßes Glasmaterial zur Herstellung von Isolationsschichten für Hochfrequenz-Substrate oder Hochfrequenz-Leiteranordnungen weist als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich von 0,05 μm bis 5 mm, bevorzugt im Bereich von 0,05 μm bis 1 mm in zumindest einem Frequenzbereich oberhalb von 1 GHz einenA glass material according to the invention for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements has an applied layer, in particular with a layer thickness in the range from 0.05 μm to 5 mm, preferably in the range from 0.05 μm to 1 mm, in at least one frequency range above of 1 GHz
Verlustfaktor tanδ kleiner oder gleich 70*10~4 auf.Loss factor tan δ less than or equal to 70 * 10 ~ 4 .
LTCC- und HTCC-Materialien werden unter anderem wegen ihrer guten Verkapselungseigenschaften geschätzt, die es gestatten, ein derartiges Substrat auch als Teil der Gehäusung von Bauelementen zu verwenden. Die Verkapselungseigenschaften Glasschichten sind sogar noch besser, da Glas für die meisten Gase eine extrem niedrige Permitivität aufweist.LTCC and HTCC materials are valued, among other things, for their good encapsulation properties, which make it possible to use such a substrate as part of the housing of components. The encapsulation properties of glass layers are even better because glass has an extremely low permittivity for most gases.
Durch den niedrigen Verlustfaktor des als Schicht aufgebrachten Glasmaterials ist das erfindungsgemäße Glasmaterial hervorragend für Hochfrequenz-Anwendungen geeignet .Due to the low loss factor of the glass material applied as a layer, the glass material according to the invention is outstandingly suitable for high-frequency applications.
Ein erfindungsgemäßes Glasmaterial kann als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm bei einer Frequenz von 40GHz besonders vorteilhaft einen Verlustfaktor tanδ kleiner oder gleich 50*10~4 aufweisen. Dieser niedrige Verlustfaktor macht das erfindungsgemäße Glasmaterial hervorragend für Hochfrequenz-Anwendungen auch bei sehr hohen Frequenzen im Mikrowellenbereich anwendbar.A glass material according to the invention can be applied as a layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm at a frequency of 40 GHz particularly advantageously have a loss factor tan δ less than or equal to 50 * 10 ~ 4 . This low loss factor makes the glass material according to the invention excellently applicable for high-frequency applications even at very high frequencies in the microwave range.
Gemäß einer Weiterbildung der Erfindung ist der Verlustfaktor tanδ einer Schicht mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm, welche unter Verwendung eines erfindungsgemäßen Glasmaterials aufgebracht wurde, bei einer Mikrowellenfrequenz von 40 GHz sogar kleiner oder gleich 30*10~4. Dieser Verlustfaktor ist sogar niedriger als die Verlustfaktoren von LTCC- und HTCC-Substraten im Mikrowellenbereich .According to a development of the invention, the loss factor tanδ of a layer with a layer thickness in the range between 0.05 μm to 5 mm, which was applied using a glass material according to the invention, is even less than or equal to 30 * 10 ~ 4 at a microwave frequency of 40 GHz. This loss factor is even lower than the loss factors of LTCC and HTCC substrates in the microwave range.
Gemäß einer besonders vorteilhaften Ausführungsform eines erfindungsgemäßen Glasmaterials kann das Material zum Abscheiden einer Schicht verdampft werden. Dadurch können Isolationsschichten unter Verwendung eines erfindungsgemäßen Glasmaterials durch PVD-Beschichtung, beziehungsweise durch Aufdampfen auf einer Unterlage abgeschieden werden. Dies ist unter anderem deshalb besonders vorteilhaft, da nur eine mäßige Temperaturbelastung der Unterlage, beziehungsweise des Substrats auftritt. Außerdem ermöglicht das Abscheiden von Glasschichten durch Verdampfen des Glasmaterials, beispielsweise von einem gegenüber der zu beschichtenden Oberfläche beabstandet angeordneten Target mit erfindungsgemäßem Glasmaterial die Herstellung sehr dünner, homogener Isolationsschichten. Die Verwendung des Glasmaterials erlaubt somit auch eine Erhöhung derAccording to a particularly advantageous embodiment of a glass material according to the invention, the material can be evaporated to deposit a layer. As a result, insulation layers can be deposited on a substrate using a glass material according to the invention by PVD coating or by vapor deposition. Among other things, this is particularly advantageous since only a moderate temperature load on the base or the substrate occurs. In addition, the deposition of glass layers by evaporation of the glass material, for example from a target with the glass material according to the invention arranged at a distance from the surface to be coated, enables the production of very thin, homogeneous insulation layers. The use of the glass material thus also allows an increase in the
Integrationsdichte von Hochfrequenz-Bauelementen, wie beispielsweise von Hochfrequenz-Substraten.Integration density of high-frequency components, such as high-frequency substrates.
Ein Glasmaterial gemäß dieser Ausführungsform der Erfindung läßt sich demgemäß so verdampfen, daß sich eine Glasschicht oder glasartige Schicht auf der Oberfläche eines Substrats ausbildet, welche der Verdampfungsquelle zugewandt und dem von der Quelle emittierten Dampf ausgesetzt ist. Diese Eigenschaft eines erfindungsgemäßen Glasmaterials wird nicht von allen Glasmaterialien erfüllt. Bei vielen Glasmaterialien bilden sich keine Glasschichten oder glasartigen Schichten, sondern es scheiden sich lediglich nicht glasartige Oxidschichten ab, welche dann im allgemeinen keine guten Verkapselungs- und/oder Hochfrequenzeigenschaften mehr aufweisen.A glass material according to this embodiment of the invention can accordingly be evaporated so that a glass layer or glass-like layer forms on the surface of a substrate, which faces the evaporation source and is exposed to the steam emitted by the source. This property of a glass material according to the invention is not fulfilled by all glass materials. With many glass materials, no glass layers or glass-like layers are formed, only non-glass-like oxide layers are deposited, which then generally no longer have good encapsulation and / or high-frequency properties.
Besonders geeignet als Aύfdampfgläser, beziehhungsweise Glasmaterialien, welche verdampft und als glasartige oder Glasschichten wieder abgeschieden werden können, sind insbesondere auch Gläser, welche ein zumindest binäres Stoffsystem umfassen. Glasschichten, welche durch Verdampfung derartiger Gläser abgeschieden wurden, weisen aufgrund ihrer Defektarmut besonders gute Verkapselungs- und Hochfrequenzeigenschaften auf.Glasses which comprise an at least binary material system are particularly suitable as steam glasses, or glass materials which can be vaporized and deposited again as glass-like or glass layers. Glass layers which have been deposited by evaporation of such glasses have particularly good encapsulation and high-frequency properties due to their low defect level.
Insbesondere ist es günstig, wenn ein erfindungsgemäßes Glasmaterial durch Elektronenstrahlverdampfung verdampft werden kann. Bei der Elektronenstrahlverdampfung kann ein sehr kleiner Quellfleck auf einem Target mit dem Glasmaterial am Auftreffpunkt des Elektronenstrahls erzeugt werden, auf den sich die Leistung des Elektronenstrahls konzentriert. Durch Elektronenstrahlverdampfung können auch hohe Abscheideraten auf dem zu beschichtenden Substrat erreicht werden.In particular, it is advantageous if a glass material according to the invention can be evaporated by electron beam evaporation. In electron beam evaporation, a very small source spot can be created on a target with the glass material at the point of impact of the electron beam, on which the power of the electron beam is concentrated. Electron beam evaporation can also achieve high deposition rates on the substrate to be coated.
Damit das Glasmaterial leicht, beispielsweise zur Formung eines Glastargets zur Elektronenstrahlverdampfung verarbeitet werden kann, ist es vorteilhaft, wenn das Glasmaterial eine Verarbeitungstemperatur von kleiner als 1300 °C aufweist. Als Verarbeitungstemperatur wird dabei im allgemeinen die Temperatur verstanden, bei welcher die Viskosität des Glases 104 dPas beträgt.So that the glass material can be processed easily, for example to form a glass target for electron beam evaporation, it is advantageous if the glass material has a processing temperature of less than 1300 ° C. As Processing temperature is generally understood to mean the temperature at which the viscosity of the glass is 10 4 dPas.
Um niedrige Abstrahlungsverluste von Leiterstrukturen zu erreichen, ist es von Vorteil, wenn das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in zumindest einem Frequenzbereich oberhalb von 1 GHz eine relative Dielektrizitätskonstante εR kleiner oder gleich fünf aufweist .In order to achieve low radiation losses from conductor structures, it is advantageous if the glass material as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm, in at least one frequency range above 1 GHz, has a relative dielectric constant ε R less than or equal to five having .
In vorteilhafter Weiterbildung kann das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm auch im Mikrowellenbereich bei einer Frequenz von 40 GHz eine relative Dielektrizitätskonstante εR kleiner oder gleich 5, insbesondere eine relative Dielektrizitätskonstante εR von 4 ± 0,5 aufweisen.In an advantageous further development, the glass material as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm, also in the microwave range at a frequency of 40 GHz, a relative dielectric constant ε R less than or equal to 5, in particular a relative dielectric constant ε R of 4 Have ± 0.5.
Gemäß einer weiteren Ausführungsform der Erfindung weist das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einen Temperaturausdehnungskoeffizienten α2o-3oo auf, der im Bereich von 2,9xl0"6 K"1 bis 3,5xl0~6 K"1 liegt. Dieser Ausdehnungskoeffizient ist unter anderem gut an die Ausdehungskoeffizienten von Silizium oder Borofloat®33-Glas angepaßt. Damit können beispielsweise Temperaturspannungen bei der Verwendung von Silizium oder Borofloat®33-Glas als Substratmaterialien weitgehend vermieden werden.According to a further embodiment of the invention, the glass material as the applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm in a temperature range from 20 ° C. to 300 ° C., has a coefficient of thermal expansion α 2 o- 3 oo in the range is from 2.9xl0 "6 K " 1 to 3.5xl0 ~ 6 K "1. This coefficient of expansion is well adapted, among other things, to the coefficient of expansion of silicon or Borofloat ® 33 glass. For example, temperature stresses when using silicon or Borofloat ® 33 glass as substrate materials can be largely avoided.
Eine noch bessere thermische Anpassung wird erreicht, wenn das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einenAn even better thermal adaptation is achieved if the glass material, in particular, is applied as an applied layer a layer thickness in the range between 0.05 μm to 5 mm in a temperature range from 20 ° C. to 300 ° C.
Temperaturausdehnungskoeffizienten α20-3oo = (3, 2±0, 2) xl0~6K_1 aufweist .Thermal expansion coefficient α 20 - 3 oo = (3, 2 ± 0, 2) xl0 ~ 6 K _1 .
Gemäß noch einer weiteren Ausführungsform der Erfindung ist ein Glasmaterial vorgesehen, welches zur Reduzierung von Temperaturspannungen bei der Verwendung als Isolationsschicht bei Silizium-Substraten als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einen Temperaturausdehnungskoeffizienten aufweist, der vom Temperaturausdehnungskoeffizienten des Substratmaterials, beispielsweise von Silizium weniger als lxlO~6K 1 abweichtAccording to yet another embodiment of the invention, a glass material is provided which, in order to reduce temperature stresses when used as an insulation layer in silicon substrates as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm in a temperature range of 20 ° C. up to 300 ° C has a coefficient of thermal expansion that deviates from the coefficient of thermal expansion of the substrate material, for example silicon, less than 1 × 10 6 K 1
Für die dauerhaften Verkapselungseigenschaften einer Glasschicht, welche mit erfindungsgemäßen Glasmaterial hergestellt wurde, ist es günstig, wenn die Glasschicht möglichst resistent gegen Säuren- oder Laugeneinwirkung ist. Eine Ausführungsform der Erfindung sieht daher ein Glasmaterial vor, welches als aufgebrachte Schicht säurebeständig gemäß Säurebeständigkeitsklasse <2 ist. Gemäß einer weiteren Ausführungsform der Erfindung ist das Glasmaterial als aufgebrachte Schicht laugenbeständig gemäß Laugenbeständigkeitsklasse <3.For the permanent encapsulation properties of a glass layer which has been produced with glass material according to the invention, it is advantageous if the glass layer is as resistant as possible to the action of acids or alkalis. One embodiment of the invention therefore provides a glass material which, as an applied layer, is acid-resistant in accordance with acid resistance class <2. According to a further embodiment of the invention, the glass material as an applied layer is alkali-resistant according to alkali resistance class <3.
Als geeignet haben sich Glasmaterialien erwiesen, deren Bestandteile sich im folgenden Zusammensetzungsbereich befinden: Komponente ZusammensetzungsbereichGlass materials whose components are in the following composition range have proven to be suitable: Component composition range
Si02 40 - 90,Si0 2 40 - 90,
B203 10 - 40,B 2 0 3 10 - 40,
A1203 0 - 5,A1 2 0 3 0 - 5,
K20 0 - 5, Li20 0 - 3,K 2 0 0 - 5, Li 2 0 0 - 3,
Na20 0 - 3.Na 2 0 0 -3.
Die obigen Zahlenwerte sind dabei in Gewichtsprozent angegeben.The above numerical values are given in percent by weight.
Die Hochfrequenzeigenschaften und dieThe high frequency properties and the
Verdampfungseigenschaften lassen sich insbesondere mit erfindungsgemäßen Glasmaterialien verbessern, welche folgende Bestandteile in Gewichtsprozent aufweisen:Evaporation properties can be improved in particular with glass materials according to the invention which have the following constituents in percent by weight:
Komponenten ZusammensetzungsbereichComponents composition area
Si02 60 - 90,Si0 2 60 - 90,
B203 10 - 30,B 2 0 3 10 - 30,
A1203 0 - 3, K20 0 - 3,A1 2 0 3 0 - 3, K 2 0 0 - 3,
Li20 0 - 2,Li 2 0 0 - 2,
Na20 0 - 2.Na 2 0 0 - 2.
Vorzugsweise weisen erfindungsgemäße Glasmaterialien dabei folgende Zusammensetzung in Gewichtsprozent auf:Glass materials according to the invention preferably have the following composition in percent by weight:
Komponenten Glasl Glas2Components Glasl Glas2
Si02 84 ± 5 71 ± 5Si0 2 84 ± 5 71 ± 5
B203 11 ± 5 26 ± 5B 2 0 3 11 ± 5 26 ± 5
Na20 2 ± 0,2 0,5 ± 0,2Na 2 0 2 ± 0.2 0.5 ± 0.2
Li20 0,3 ± 0, 2 0,5 ± 0,2Li 2 0 0.3 ± 0, 2 0.5 ± 0.2
K20 0,3 ± 0, 2 1,0 ± 0,2K 2 0 0.3 ± 0, 2 1.0 ± 0.2
A1203 0,5 ± 0, 2 1,0 ± 0,2A1 2 0 3 0.5 ± 0, 2 1.0 ± 0.2
An einem solchen Glas mit der Zusammensetzung 71 Gew% Si02, 26 Gew% B203, 1 Gew% A1203, 1 Gew% K20 und jeweils 0,5 Gew% Li20 und Na20 wurden folgende Eigenschaften gemessen: Temperaturausdehungs- koeffizient zwischen 20 °C undOn such a glass with the composition 71 wt% Si0 2 , 26 wt% B 2 0 3 , 1 wt% A1 2 0 3 , 1 wt% K 2 0 and in each case 0.5 wt% Li 2 0 and Na 2 0 measured the following properties: Temperature expansion coefficient between 20 ° C and
300 °C: 6 _, α2o-3θo=3,2xlO 5 K \300 ° C: 6 _, α 2 o- 3θ o = 3.2xlO 5 K \
Brechungsindex: nd=l,465 ,Refractive index: nd = 1.465,
Transformationstemperatur: Tg=466 °C,Transformation temperature: T g = 466 ° C,
Erweichungstemperatur: TE =742 °C,Softening temperature: T E = 742 ° C,
Verarbeitungstemperatur: TVA = 1207 °C,Processing temperature: T VA = 1207 ° C,
Relativerelative
Dielektrizitätskonstante beiDielectric constant at
40 GHz: „ n εR = 3,9 ,40 GHz: " n ε R = 3.9,
Verlustfaktor bei 40 GHz: tanδ = 26xl0~4,Loss factor at 40 GHz: tanδ = 26xl0 ~ 4 ,
Dichte: p = 2,12 g-cm"3,Density: p = 2.12 g-cm "3 ,
Beständigkeitsklasse Wasser: 2,Resistance class water: 2,
Beständigkeitsklasse Säuren: 2,Resistance class acids: 2,
Beständigkeitsklasse Laugen: 3.Resistance class alkali: 3.
Dieses besonders geeignete Glas mit wird im folgenden auch als Glas G018-189 bezeichnet.This particularly suitable glass is also referred to below as glass G018-189.
Eine weitere Ausführungsform ergibt ein geeignetes Glas mit der Zusammensetzung 84 Gew% Si02, 11 Gew% B203, < 2 Gew% A1203, 2,0 Gew% Na20 und jeweils ca. 0,3 Gew% Li20 und K20 wurden folgende Eigenschaften gemessen:A further embodiment produces a suitable glass with the composition 84% by weight SiO 2 , 11% by weight B 2 0 3 , <2% by weight A1 2 0 3 , 2.0% by weight Na 2 0 and in each case approximately 0.3% by weight Li 2 0 and K 2 0 the following properties were measured:
Temperaturausdehungs- koeffizient zwischen 20 °C undTemperature expansion coefficient between 20 ° C and
300 °C * α20-30o=2,75xlO'6 K"1,300 ° C * α 20 - 30 o = 2.75xlO '6 K "1 ,
Brechungsindex: nd=l,47 ,Refractive index: nd = 1.47,
Transformationstemperatur: Tg=562 °C,Transformation temperature: T g = 562 ° C,
Relativerelative
Dielektrizitätskonstante beiDielectric constant at
40 GHz: εR — 5 , Verlustfaktor bei 40 GHz: tanδ = 40xl0~4,40 GHz: ε R - 5, Loss factor at 40 GHz: tanδ = 40xl0 ~ 4 ,
Dichte: p = 2,2 g-crrf3,Density: p = 2.2 g-crrf 3 ,
Beständigkeitsklasse Wasser: 1,Resistance class water: 1,
Beständigkeitsklasse Säuren: 1,Resistance class acids: 1,
Beständigkeitsklasse Laugen: 2.Resistance class alkali: 2.
Dieses ebenfalls besonders geeignete Glas mit wird im folgenden auch als Glas 8329 bezeichnet.This glass, which is also particularly suitable, is also referred to below as glass 8329.
Die oben angegebenen Zusammensetzungen beziehen sich auf das Glasmaterial vor dem Aufbringen. Die Schicht, die unter Verwendung eines solchen Glasmaterials aufgebracht wurde, kann auch eine davon abweichende Zusammensetzung haben. Beispielsweise kann sich die Zusammensetzung in der Schicht gegenüber dem erfindungsgemäßen Glasmaterial verändern, wenn die Schicht durch Aufdampfen abgeschieden wird und die Komponenten des Glasmaterials unterschiedliche Dampfdrücke haben.The compositions given above relate to the glass material before application. The layer that was applied using such a glass material can also have a different composition. For example, the composition in the layer can change compared to the glass material according to the invention if the layer is deposited by vapor deposition and the components of the glass material have different vapor pressures.
Ein wie oben beschriebenes Glasmaterial kann besonders vorteilhaft zur Herstellung einer Isolationsschicht für eine Hochfrequenz-Leiterstruktur oder ein Hochfrequenz-Substrat verwendet werden.A glass material as described above can be used particularly advantageously for producing an insulation layer for a high-frequency conductor structure or a high-frequency substrate.
Ein entsprechendes Verfahren zur Herstellung einesA corresponding method for producing a
Bauelements mit Hochfrequenz-Leiteranordnung kann dazu vorteilhaft die Schritte umfassen:For this purpose, a component with a high-frequency conductor arrangement can advantageously comprise the steps:
-Abscheiden einer strukturierten Glasschicht mit zumindest einer Öffnung über einem Kontaktierungsbereich auf einem Substrat unter Verwendung eines insbesondere wie vorstehend beschriebenen Glasmaterials, undDepositing a structured glass layer with at least one opening over a contact area on a substrate using a glass material, in particular as described above, and
-Aufbringen zumindest einer Leiterstruktur auf die Glasschicht, welche einen elektrischen Kontakt mit dem Kontaktierungsbereich aufweist. Insbesondere ist aufgrund der oben genannten Vorteile daran gedacht, die Glasschicht durch Verdampfen des Glasmaterials abzuscheiden.Applying at least one conductor structure to the glass layer which has electrical contact with the contacting area. In particular, due to the advantages mentioned above, it is contemplated to deposit the glass layer by evaporating the glass material.
Mit dem erfindungsgemäßen Verfahren ist demgemäß einAccordingly, with the method according to the invention
Bauelement mit Hochfrequenz-Leiteranordnung herstellbar, welchesComponent can be manufactured with high-frequency conductor arrangement, which
-ein Substrat mit zumindest einem Kontaktierungsbereich, -auf zumindest einer Seite des Substrats eine Glasschicht, die zumindest eine Öffnung mit einer Durchkontaktierung aufweist, und wobei die Durchkontaktierung in elektrischem Kontakt mit dem Kontaktierungsbereich steht, und -zumindest eine Leiterstruktur auf der Glasschicht, welche mit der Durchkontaktierung in Kontakt ist, umfaßt.a substrate with at least one contacting area, on at least one side of the substrate a glass layer which has at least one opening with a via, and the via is in electrical contact with the contacting area, and at least one conductor structure on the glass layer which the via is in contact.
Als Bauelement in diesem Sinne wird nicht nur ein elektronisches Bauelement verstanden. Auch ein beschichtetes Substrat mit Hochfrequenz-Leiteranordnung, beziehungsweiseIn this sense, a component is not only understood to be an electronic component. Also a coated substrate with high frequency conductor arrangement, respectively
Hochfrequenz-Leitersystem, welches dann als Ganzes als Träger und zur Verschaltung von weiteren Bauelementen dient, wird als Bauelement im Sinne dieser Erfindung verstanden. Ähnliche Bauelemente mit Trägermaterial und Hochfrequenz-Leitersystem werden im allgemeinen auch als Hochfrequenz-Substrate bezeichnet .High-frequency conductor system, which then serves as a whole as a carrier and for connecting further components, is understood as a component in the sense of this invention. Similar components with carrier material and high-frequency conductor system are generally also referred to as high-frequency substrates.
Als Substratmaterialien sind unter anderem Silizium, Keramik, Glas, oder sogar Kunststoff geeignet. Auch können Verbundmaterialien, beispielsweise Glas-Kunststoff-Laminate, insbesondere auch mit integrierten Leiteranordnungen verwendet werden. Neben Silizium können auch beispielsweise andere Halbleitermaterialien, wie etwa Galliumarsenid verwendet werden. Silizium, Keramik und Glas als Substratmaterial sind auch besonders aufgrund ihrer zum aufgedampften Glas sehr ähnlichen Temperaturausdehungskoeffizienten geeignet .Silicon, ceramic, glass or even plastic are suitable as substrate materials. Composite materials, for example glass-plastic laminates, in particular also with integrated conductor arrangements can also be used. In addition to silicon, other semiconductor materials such as gallium arsenide can also be used, for example. Silicon, ceramics and glass as substrate material are also special due to their vapor-deposited glass very similar coefficients of thermal expansion.
Die Glasschicht wird besonders vorzugsweise durch Verdampfen von erfindungsgemäßem Glasmaterial abgeschieden. Es ist jedoch auch denkbar, die Glasschicht beispielsweise durch Aufsputtern von einem Target mit erfindungsgemäßem Glasmaterial auf der zu beschichtenden Oberfläche des Substrats abzuscheiden.The glass layer is particularly preferably deposited by evaporating glass material according to the invention. However, it is also conceivable for the glass layer to be deposited on the surface of the substrate to be coated, for example by sputtering, from a target with glass material according to the invention.
Gemäß einer Weiterbildung der Erfindung erfolgt das Aufdampfen der Glasschicht durch Plasma-Ionen-unterstütztes Aufdampfen (PIAD). Dabei wird während des Aufdampfprozesse ein Ionenstrahl auf die zu beschichtende Oberfläche gerichtet. Dies führt zu einer weiteren Verdichtung und einer Verringerung der Defektdichte.According to a further development of the invention, the glass layer is vapor-deposited by means of plasma ion-assisted vapor deposition (PIAD). An ion beam is directed onto the surface to be coated during the vapor deposition process. This leads to a further compression and a reduction in the defect density.
Auf die Glasschicht können neben Leiterstrukturen, wie beispielsweise Leiterbahnen auch ein oder mehrere passive elektrische Bauelemente aufgebracht und mit derIn addition to conductor structures, such as, for example, conductor tracks, one or more passive electrical components can also be applied to the glass layer and with the
Leiterstruktur in Kontakt gebracht, beziehungsweise angeschlossen werden. Beispielsweise kann auf der Glasschicht als passives elektrisches Bauelement ein Kondensator, ein Widerstand, eine Spule, ein Varistor, ein PTC, ein NTC, oder ein Filterelement auf der Glasschicht aufgebracht werden.Conductor structure brought into contact or connected. For example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element can be applied to the glass layer as a passive electrical component.
Eine besonders vorteilhafte Ausführungsform der Erfindung sieht die Herstellung eines dreidimensionalen oder mehrlagigen Leitersystems auf einem Substrat vor. Dazu werden die Schritte des Abscheidens einer strukturierten Glasschicht und des Aufbringens zumindest einer Leiterstruktur mehrfach durchgeführt. Die einzelnen Glasschichten und/oder Leiterstrukturen können dabei unterschiedlich strukturiert sein, um ein dreidimensionales Leitersystem, insbesondere auch mit passiven Bauelementen, die auf einer oder mehreren Lagen des mehrlagigen Leitersystems ausgebildet werden, zu realisieren. Dabei kann vorteilhaft eine nachfolgend aufgebrachte Leiterstruktur mit einem Kontaktierungsbereich einer vorhergehend aufgebrachten Leiterstruktur verbunden oder in Kontakt gebracht werden, so daß zwischen zwei Lagen der Leiteranordnung ein elektrischer Anschluß geschaffen wird und die Lagen miteinander elektrisch vernetzt werden können. Dementsprechend kann damit ein Bauelement ausgebildet werden, das eine mehrlagige Leiteranordnung mit zumindest zwei aufgedampften Glasschichten und jeweils darauf aufgebrachter Leiterstruktur aufweist, wobei eine Leiterstruktur auf einer ersten Glasschicht mit einer Leiterstruktur auf einer zweiten Glasschicht über eine Durchkontaktierung in elektrischem Kontakt sind.A particularly advantageous embodiment of the invention provides for the production of a three-dimensional or multilayer conductor system on a substrate. For this purpose, the steps of depositing a structured glass layer and applying at least one conductor structure are carried out several times. The individual glass layers and / or conductor structures can be structured differently in order to form a three-dimensional conductor system, in particular also with passive components that are based on one or more Layers of the multilayer conductor system are formed. In this case, a subsequently applied conductor structure can advantageously be connected or brought into contact with a contact area of a previously applied conductor structure, so that an electrical connection is created between two layers of the conductor arrangement and the layers can be electrically networked with one another. Accordingly, a component can be formed which has a multilayer conductor arrangement with at least two vapor-deposited glass layers and a conductor structure applied thereon, a conductor structure on a first glass layer being in electrical contact with a conductor structure on a second glass layer via a plated-through hole.
Es ist jedoch auch möglich, zwei oder mehr übereinanderliegende oder versetzte Durchkontaktierungen in einzelnen aufeinanderliegenden Glasschichten in Kontakt zu bringen, so daß beispielsweise ein Kontaktierungsbereich des Substrats durch mehrere Glasschichten hindurch nach außen durchkontaktiert oder mit einer Leiterstruktur einer weiteren Lage verbunden wird.However, it is also possible to bring two or more superimposed or offset vias into contact in individual superimposed glass layers, so that, for example, a contacting area of the substrate is viased through several glass layers or is connected to a conductor structure of a further layer.
Eine vorteilhafte Ausführungsform des Verfahrens sieht weiterhin vor, daß der Schritt des Abscheidens einer strukturierten Glasschicht mit zumindest einer Öffnung über einem Kontaktierungsbereich durch Aufdampfen die Schritte umfaßt :An advantageous embodiment of the method further provides that the step of depositing a structured glass layer with at least one opening over a contacting area comprises the steps of:
-Aufbringen einer strukturierten Zwischenschicht, welche den Kontaktierungsbereich abdeckt,Applying a structured intermediate layer, which covers the contact area,
-Aufdampfen einer Glasschicht auf das Substrat und die darauf befindliche strukturierte Zwischenschicht, wobei die Dicke der Glasschicht vorzugsweise geringer ist als die der strukturierten Zwischenschicht , und -Entfernen der strukturierten Zwischenschicht, wobei die Bereiche der Glasschicht, die sich auf der strukturierten Zwischenschicht befinden, mit abgehoben werden.Vapor deposition of a glass layer onto the substrate and the structured intermediate layer thereon, the thickness of the glass layer preferably being less than that of the structured intermediate layer, and removal of the structured intermediate layer, the Areas of the glass layer that are on the structured intermediate layer are also lifted off.
Neben der photolithographischen Lackstrukturierung kann eine derartige strukturierte Zwischenschicht auch direkt, etwa durch Bedrucken hergestellt werden.In addition to the photolithographic lacquer structuring, such a structured intermediate layer can also be produced directly, for example by printing.
Eine Weiterbildung des Verfahrens sieht weiterhin vor, vor dem Aufdampfen der Glasschicht auf den zumindest einen Kontaktierungsbereich ein leitendes, gegenüber zumA further development of the method also provides for a conductive, opposite to, before the vapor deposition of the glass layer on the at least one contacting area
Kontaktierungsbereich benachbarten Bereichen hervorragendes Material aufzubringen, welches von der Struktur der Zwischenschicht bedeckt wird. Damit wird eine leitende, erhabene Struktur auf dem Kontaktierungsbereich erzeugt. Dieser Schritt kann durchgeführt werden, indem etwa dieContacting areas adjacent areas to apply excellent material, which is covered by the structure of the intermediate layer. This creates a conductive, raised structure on the contact area. This step can be done by using the
Zwischenschicht zusammen mit einer Schicht aus leitfähigem Material photolithographisch strukturiert wird, wobei die Schicht aus leitfähigem Material zusammen mit der Zwischenschicht von den Bereichen, welche den Kontaktierungsbereich umgeben entfernt wird. Die Glasschicht kann dann vorteilhaft so aufgedampft werden, daß ihre Dicke im wesentlichen der Dicke des aufgebrachten, leitenden Materials entspricht, so daß nach dem Abheben der Glasschicht über dem Kontaktierungsbereich eine im wesentlichen ebene Oberfläche vorhanden ist.Intermediate layer is photolithographically structured together with a layer of conductive material, the layer of conductive material together with the intermediate layer being removed from the regions which surround the contacting region. The glass layer can then advantageously be evaporated so that its thickness substantially corresponds to the thickness of the applied conductive material, so that an essentially flat surface is present after the glass layer has been lifted off over the contact area.
Gemäß noch einer Weiterbildung der Erfindung wird zunächst eine Glasschicht mit zumindest einer Öffnung direkt über einem Kontaktierungsbereich oder vorteilhaft seitlich versetzt abgeschieden und die zumindest eine Öffnung in der Glasschicht danach mit leitendem Material aufgefüllt. Auch auf diese Weise wird eine im wesentlichen ebene Oberfläche als Unterlage für das anschließende Aufbringen einer oder mehrerer Leiterstrukturen geschaffen. Es hat sich ferner als vorteilhaft erwiesen, wenn das Substrat während dem Aufdampfen der Glasschicht auf einer Temperatur zwischen 50 °C und 200 °C, bevorzugt zwischen 80 °C und 120 °C gehalten wird. Durch das Erwärmen desAccording to a further development of the invention, a glass layer with at least one opening is deposited directly above a contact area or advantageously offset laterally, and the at least one opening in the glass layer is then filled with conductive material. In this way too, an essentially flat surface is created as a base for the subsequent application of one or more conductor structures. It has also proven to be advantageous if the substrate is kept at a temperature between 50 ° C. and 200 ° C., preferably between 80 ° C. and 120 ° C., during the vapor deposition of the glass layer. By heating the
Substrates wird unter anderem das Entstehen von mechanischen Spannungen vermieden. Auch ist das mäßige Erwärmen vorteilhaft für die Morphologie der Glasschichten, wobei bei diesen Substrattemperaturen besonders porenfreie Glasschichten erzeugt werden konnten.Among other things, the creation of mechanical stresses is avoided. The moderate heating is also advantageous for the morphology of the glass layers, it being possible to produce particularly pore-free glass layers at these substrate temperatures.
Gleichermaßen positiv für die geforderte Schichtqualität ist auch ein Basisdruck in der Aufdampfkämmer, der beim Aufdampfen der Glasschicht höchstens im Bereich von 10"4 mbar, bevorzugt im Bereich von 10~5 mbar oder geringer gehalten wird.Equally positive for the required film quality is also a base pressure in the Aufdampfkämmer, which is in vapor deposition of the glass layer is at most in the range of 10 "4 mbar, preferably in the range of 10 -5 mbar or less retained.
Um geschlossene Glasschichten mit geringer Porendichte auf dem Substrat herzustellen, ist es außerdem günstig, wenn die zu beschichtende Oberfläche des Substrats eineIn order to produce closed glass layers with a low pore density on the substrate, it is also advantageous if the surface of the substrate to be coated is one
Oberflächenrauhigkeit von kleiner als 50 μm aufweist.Surface roughness of less than 50 microns.
Noch eine weitere vorteilhafte Weiterbildung des erfindungsgemäßen Verfahrens sieht vor, die Glasschicht mit einer Abscheiderate von zumindest 0,5 μm Schichtdicke pro Minute aufzudampfen. Diese hohe Abscheiderate kann ohne Nachteil für die Schichtqualität der Glasschichten ohne weiteres erreicht werden und erlaubt eine kurze Herstellungszeit. Andere Vakuum-Abscheideverfahren, wie etwa Kathodenzerstäubung erreichen demgegenüber nur Abscheideraten von wenigen Nanometern pro Minute.Yet another advantageous development of the method according to the invention provides for the glass layer to be vapor-deposited with a deposition rate of at least 0.5 μm layer thickness per minute. This high deposition rate can be achieved without disadvantage for the layer quality of the glass layers and allows a short manufacturing time. In contrast, other vacuum deposition processes, such as cathode sputtering, only achieve deposition rates of a few nanometers per minute.
Das Aufbringen der Leiterstruktur kann außerdem vorteilhaft die Schritte des Aufbringens einer negativ strukturierten Zwischenschicht und des anschließenden Abscheidens von leitendem Material auf die mit der Zwischenschicht beschichtete Unterlage umfassen. Die Unterlage umfaßt dabei das Substrat und/oder das Substrat mit einer oder mehreren aufgebrachten Glasschichten und darauf angeordneten Leiterstrukturen. Auch diese Zwischenschicht kann photolithographisch strukturiert oder durch strukturiertes Bedrucken hergestellt sein.The application of the conductor structure can also advantageously include the steps of applying a negatively structured intermediate layer and then depositing include conductive material on the base coated with the intermediate layer. The base comprises the substrate and / or the substrate with one or more applied glass layers and conductor structures arranged thereon. This intermediate layer can also be structured photolithographically or produced by structured printing.
Das Substrat selbst kann bereits eine Leiterstruktur, beispielsweise in Form von Leiterbahnen aufweisen. Diese können auch vorteilhaft vor dem Schritt des Abscheidens der strukturierten Glasschicht direkt auf das Substrat aufgebracht werden. Insbesondere kann dann auf einer direkt auf dem Substrat aufgebrachten Leiterbahn ein Kontaktierungsbereich vorgesehen werden, der dann mit einer nachfolgend auf einer isolierenden Glasschicht aufgebrachten Leiterstruktur in Kontakt gebracht wird. Auf diese Weise kann bereits nach einer einfachen Durchführung der Schritte des Abscheidens einer Glasschicht und des nachfolgenden Aufbringens zumindest einer Leiterstruktur auf die Glasschicht ein mehrlagiges, hochfrequenztaugliches Leiterbahnsystem, beziehungsweise eine mehrlagige hochfrequenztaugliche Leiteranordnung geschaffen werden. Selbstverständlich können dabei durch mehrfache Durchführung der Schritte des Abscheidens einer Glasschicht undThe substrate itself can already have a conductor structure, for example in the form of conductor tracks. These can also advantageously be applied directly to the substrate before the step of depositing the structured glass layer. In particular, a contacting area can then be provided on a conductor track applied directly on the substrate, which contact area is then brought into contact with a conductor structure subsequently applied on an insulating glass layer. In this way, after a simple implementation of the steps of depositing a glass layer and subsequently applying at least one conductor structure to the glass layer, a multilayer, high-frequency conductor system, or a multilayer, high-frequency conductor arrangement can be created. Of course, multiple steps of depositing a glass layer and
Aufbringens einer Leiterstruktur noch weitere Lagen eines dreidimensionalen Leiterbahnsystems, insbesondere auch mit darin integrierten passiven Bauelementen geschaffen werden.Applying a conductor structure to create further layers of a three-dimensional conductor track system, in particular also with passive components integrated therein.
Noch eine weitere Ausführungsform der Erfindung sieht vor, daß das Substrat ein Halbleitersubstrat mit einem oder mehreren aktiven Halbleiter-Bereichen auf einer ersten Seite des Substrats umfaßt. Beispielsweise kann das Substrat eine integrierte Halbleiterschaltung umfassen. Dabei kann die zumindest eine Leiterstruktur beim Aufbringen mit einer Anschlußstelle des aktiven Halbleiter-Bereichs in Verbindung gebracht werden, so daß ein elektrischer Kontakt mit der Leiterstruktur und damit auch mit der Leiteranordnung besteht .Yet another embodiment of the invention provides that the substrate comprises a semiconductor substrate with one or more active semiconductor regions on a first side of the substrate. For example, the substrate can comprise a semiconductor integrated circuit. The at least one conductor structure can be applied with a Connection point of the active semiconductor region are connected so that there is electrical contact with the conductor structure and thus also with the conductor arrangement.
Bisher wurde beispielsweise bei LTCC-Modulen der Weg bestritten, einzelne Halbleiterbausteine monolithisch in Kavitäten in der Keramik zu integrieren, so daß die Keramik der Träger für die Halbleiterbausteine ist. Die Erfindung ermöglicht demgegenüber auch den umgekehrten Weg, wobei die Leiteranordnung direkt' auf einem Chip aufgebracht wird und dieser so als Träger für die Leiteranordnung dient.So far, for example, in the case of LTCC modules, the path has been disputed to monolithically integrate individual semiconductor components into cavities in the ceramic, so that the ceramic is the carrier for the semiconductor components. The invention, on the other hand, also enables the reverse route, in which the conductor arrangement is applied directly to a chip and thus serves as a carrier for the conductor arrangement.
Eine weitere Ausführungsform der Erfindung sieht ein Substrat vor, welches zumindest eine Durchkontaktierung aufweist. Dann kann die zumindest eine Leiterstruktur beim Aufbringen mit der Durchkontaktierung durch das Substrat verbunden werden. Diese Ausführungsform der Erfindung ermöglicht es unter anderem, Strukturen auf einer Seite des Substrats mit einer Hochfrequenz-Leiteranordnung auf einer weitere Seite des Substrats anzuschließen.A further embodiment of the invention provides a substrate which has at least one plated-through hole. The at least one conductor structure can then be connected to the via through the substrate during application. This embodiment of the invention makes it possible, among other things, to connect structures on one side of the substrate with a high-frequency conductor arrangement on a further side of the substrate.
Ist die ein- oder mehrlagige Leiteranordnung auf dem Substrat fertiggestellt, kann zusätzlich eine weitere, abschließende Glasschicht durch Aufdampfen abgeschieden werden, welche die vorherig aufgebrachten Schichten abdeckt. Um die Kontaktierung der Leiteranordnung auf dem Substrat zu ermöglichen, kann vorteilhaft zumindest eine Durchkontaktierung durch die abschließende Glasschicht geschaffen werden. Das Herstellen dieser Glasschicht kann dabei in gleicher Weise wie die Herstellung der darunterliegenden Glasschichten der Leiteranordnung erfolgen. Diese weitere Schicht kann als Isolationsschicht dienen, welche die Leiteranordnung nach außen hin isoliert. Für eine wirtschaftliche Fertigung erfindungsgemäßer Bauelemente ist es auch von Vorteil, wenn das Substrat im Waferverbund beschichtet wird, so daß eine Vielzahl von Bauelementen gleichzeitig bearbeitet wird.If the single-layer or multi-layer conductor arrangement on the substrate has been completed, a further, final glass layer can additionally be deposited by vapor deposition, which covers the layers previously applied. In order to enable contacting of the conductor arrangement on the substrate, at least one through-connection can advantageously be created through the final glass layer. This glass layer can be produced in the same way as the production of the underlying glass layers of the conductor arrangement. This further layer can serve as an insulation layer which insulates the conductor arrangement from the outside. For economical production of components according to the invention, it is also advantageous if the substrate is coated in the wafer composite, so that a large number of components are processed simultaneously.
In der am gleichen Tag wie die vorliegende Anmeldung eingereichte internationale Patentanmeldung der Anmelderin mit dem Titel "Verfahren zur Herstellung eines Bauelements mit hochfrequenztauglicher Leiteranordnung" werdenIn the applicant's international patent application, filed on the same day as the present application, entitled "Method for producing a component with a high-frequency conductor arrangement"
Bauelemente mit Hochfrequenz-Leiteranordnung, sowie Verfahren zu deren Herstellung offenbart, bei welchen aufgedampfte Glasschichten als Isolationsschichten verwendet werden. Das erfindungsgemäße Glasmaterial ist besonders auch für die in dieser Anmeldung beschriebenen Verfahren und Bauelemente einsetzbar, wobei der Offenbarungsgehalt dieser Anmeldung diesbezüglich hiermit ausdrücklich durch Referenz inkorporiert wird.Components with high-frequency conductor arrangement, as well as methods for their production are disclosed, in which vapor-deposited glass layers are used as insulation layers. The glass material according to the invention can also be used in particular for the methods and components described in this application, the disclosure content of this application in this regard being hereby expressly incorporated by reference.
Die hier, sowie in der oben angegebenen, inkorporierten internationale Patentanmeldung der Anmelderin mit dem Titel "Verfahren zur Herstellung eines Bauelements mit hochfrequenztauglicher Leiteranordnung" beschriebenen Verfahren und Bauelemente sind besonders geeignet für die Verwendung erfindungsgemäßen Glasmaterials.The methods and components described here, as well as in the above-mentioned, incorporated international patent application by the applicant with the title "Method for producing a component with a high-frequency conductor arrangement" are particularly suitable for the use of glass material according to the invention.
Selbstverständlich können aber auch ähnliche oder andersartige Bauelemente für Hochfrequenzanwendungen unter Verwendung des Glasmaterials hergestellt werden. Gemäß einem Aspekt der Erfindung ist demgemäß allgemein an die Verwendung eines erfindungsgemäßen Glasmaterials zur Herstellung einer Isolationsschicht für eine Hochfrequenz-Leiterstruktur oder ein Hochfrequenz-Substrat gedacht, um die Hochfrequenzeigenschaften solcher Elemente zu verbessern. Im folgenden wird die Erfindung anhand von Ausführungsbeispielen und unter Bezugnahme auf die Zeichnungen näher erläutert, wobei gleiche und ähnliche Elemente mit gleichen Bezugszeichen versehen sind und die Merkmale verschiedener Ausführungsformen miteinander kombiniert werden können.Of course, similar or different types of components for high-frequency applications can also be produced using the glass material. According to one aspect of the invention, the use of a glass material according to the invention for the production of an insulation layer for a high-frequency conductor structure or a high-frequency substrate is generally considered in order to improve the high-frequency properties of such elements. The invention is explained in more detail below with reference to exemplary embodiments and with reference to the drawings, the same and similar elements being provided with the same reference symbols and the features of different embodiments being able to be combined with one another.
Es zeigen:Show it:
Fig. 1 eine Schnittdarstellung einer erstenFig. 1 is a sectional view of a first
Ausführungsform der Erfindung, Fig. 2 Eine Schnittdarstellung einer weiterenEmbodiment of the invention, Fig. 2 A sectional view of another
Ausführungsform der Erfindung mit zweiEmbodiment of the invention with two
Leiteranordnungen auf gegenüberliegenden Seiten eines Substrats, Fig. 3A Anhand von Querschnittansichten die Schritte einer bis 3G Ausführungsform des erfindungsgemäßen Verfahrens, Fig. 4A Eine Variante der in den Fig. 3B bis 3E gezeigten bis 4E Verfahrensschritten des erfindungsgemäßenConductor arrangements on opposite sides of a substrate, FIG. 3A with the aid of cross-sectional views the steps of a to 3G embodiment of the method according to the invention, FIG. 4A a variant of the method steps shown in FIGS
Verfahrens, Fig. 5 Ausführungsformen erfindungsgemäßer, im bis 7 Waferverbund mit einer Leiteranordnung versehenerMethod, Fig. 5 embodiments of the invention, provided in a to 7 wafer composite with a conductor arrangement
Bauelemente, Fig. 8 einen schematischen Layeraufbau für HFComponents, Fig. 8 is a schematic layer structure for HF
Messstruktur, Fig. 9 einen Layeraufbau offener Coplanarleitungen CPW 1 /9, a layer structure of open coplanar lines CPW 1 /
2, Fig. 10 einen Layeraufbau vergrabener Coplanarleitungen CPW2, FIG. 10 shows a layer structure of buried coplanar lines CPW
3, Fig. 11 eine Auflistung von Eigenschaften von vermessenen3, Fig. 11 is a listing of properties of measured
Proben, wobei die Messwerte in den nachfolgendenSamples, the readings in the following
Fig. 12 bis 23 dargestellt sind, Fig. 12 den Betrag der Streuparameter und deren bis 14 Phasenverlauf der Probe G1ACPW2 2 (Glas 8329), Fig. 15 den Betrag der Streuparameter und deren bis 17 Phasenverlauf der Probe G1ACPW3_2 (Glas 8329),12 to 23 are shown, FIG. 12 the amount of the scattering parameters and their up to 14 phase profile of the sample G1ACPW2 2 (glass 8329), 15 shows the amount of the scattering parameters and their up to 17 phase profile of the sample G1ACPW3_2 (glass 8329),
Fig. 18 den Betrag der Streuparameter und deren bis 20 Phasenverlauf der Probe G2ACPW2_6 (Glas G018-189), und18 the amount of the scattering parameters and their up to 20 phase profile of the sample G2ACPW2_6 (glass G018-189), and
Fig. 21 den Betrag der Streuparameter und deren bis 23 Phasenverlauf der Probe G2ACPW3_2 (Glas G018-189) .21 shows the magnitude of the scattering parameters and their phase curve up to 23 for the sample G2ACPW3_2 (glass G018-189).
Fig. 1 zeigt eine vereinfachte Schnittdarstellung einer ersten Ausführungsform eines erfindungsgemäßen, als Ganzes mit dem Bezugszeichen 10 bezeichneten Bauelements mit einem Substrat 1 mit einer ersten Seite 3 und einer der Seite 3 gegenüberliegenden Seite 5 und einer auf dem Substrat auf der ersten Seite 3 angeordneten, als Ganzes mit dem Bezugszeichen 4 bezeichneten Hochfrequenz-Leiteranordnung. Auf dem Substrat 1 ist eine Lage 6 mit Leiterstrukturen 61 - 64 angeordnet. Die Leiterstrukturen 61 - 64 können beispielsweise Leiterbahnen sein. Außerdem können einzelne der Leiterstrukturen 61 - 64 auch als passive elektrische Bauelemente ausgebildet sein. Auf diesen Leiterstrukturen 61 - 64 auf der ersten Seite 3 des Substrats 1 sind Kontaktierungsbereiche 71 - 74 definiert. Nachdem die1 shows a simplified sectional illustration of a first embodiment of a component according to the invention, designated as a whole by reference number 10, having a substrate 1 with a first side 3 and a side 5 opposite to side 3 and a side 5 arranged on the substrate on the first side 3, as a whole with the reference number 4 high-frequency conductor arrangement. A layer 6 with conductor structures 61-64 is arranged on the substrate 1. The conductor structures 61-64 can be conductor tracks, for example. In addition, some of the conductor structures 61-64 can also be designed as passive electrical components. Contacting regions 71-74 are defined on these conductor structures 61-64 on the first side 3 of the substrate 1. after the
Leiterstrukturen der Lage 6 aufgebracht sind, wird auf die erste Seite 3 des Substrats dann eine isolierende Glasschicht 9 durch Aufdampfen strukturiert abgeschieden, so daß sie Öffnungen 8 über den Kontaktierungsbereichen 71 - 74 aufweist. Diese Öffnungen 8 sind mit einem leitenden Material 19 gefüllt, so daß die Öffnungen in Verbindung mit den leitenden Füllungen jeweils Durchkontaktierungen durch die isolierende Glasschicht 9 schaffen. Auf der Glasschicht 9 ist eine Lage 11 mit weiteren Leiterstrukturen 111, 112, 113 aufgebracht. Die Leiterstrukturen 111, 112, 113 sind dabei jeweils mit zumindest einer der Durchkontaktierungen in Kontakt, so daß eine elektrische Verbindung der Leiterstrukturen 111, 112, 113 mit den Leiterstrukturen 61 - 64 der Lage 6 besteht. Damit weist das Substrat eine mehrlagige Leiteranordnung auf, deren Lagen 6 und 11 durch eine isolierende Glasschicht 9 mit hervorragenden Hochfrequenzeigenschaften voneinander getrennt sind.If conductor structures of the layer 6 are applied, an insulating glass layer 9 is then deposited in a structured manner by vapor deposition on the first side 3 of the substrate, so that it has openings 8 above the contacting areas 71-74. These openings 8 are filled with a conductive material 19, so that the openings in connection with the conductive fillings each create vias through the insulating glass layer 9. A layer 11 with further conductor structures 111, 112, 113 is applied to the glass layer 9. The conductor structures 111, 112, 113 are each in contact with at least one of the plated-through holes, so that an electrical connection of the conductor structures 111, 112, 113 to the conductor structures 61 - 64 of layer 6. The substrate thus has a multilayer conductor arrangement, the layers 6 and 11 of which are separated from one another by an insulating glass layer 9 with excellent high-frequency properties.
Die Glasschicht 9 kann, je nach Anwendungszweck eine Dicke im Bereich von 0,05 μm bis 5 mm aufweisen, wobei durch Aufdamfen hergestellte Glasschichten zweckmäßig eine Dicke im Bereich von 0,05 μm bis 1 mm aufweisen.Depending on the application, the glass layer 9 can have a thickness in the range from 0.05 μm to 5 mm, glass layers produced by vapor deposition expediently having a thickness in the range from 0.05 μm to 1 mm.
Auf der Lage 11 mit den Leiterstrukturen 111, 112, 113 ist eine weitere, abschließende Aufdampfglasschicht 13 abgeschieden, die als äußere Isolation der Leiterstrukturen 111, 112, 113 dient. Um eine Kontaktierung dieser Leiterstrukturen zu ermöglichen, sind außerdem weitere Durchkontaktierungen 15 in der abschließenden Aufdampfglasschicht 13 vorhanden, die mit den Leiterstrukturen 111, 112, 113 in Kontakt sind. Auf den Durchkontaktierungen 15 sind zusätzlich Lötperlen 17 aufgebracht, um das Bauelement 10 beispielsweise auf einer SMT-Platine zu befestigen und anzuschließen.A further, final vapor-deposition glass layer 13 is deposited on the layer 11 with the conductor structures 111, 112, 113 and serves as external insulation of the conductor structures 111, 112, 113. In order to make it possible to make contact with these conductor structures, there are also further plated-through holes 15 in the final vapor deposition glass layer 13, which are in contact with the conductor structures 111, 112, 113. Solder beads 17 are additionally applied to the plated-through holes 15 in order to attach and connect the component 10 to an SMT circuit board, for example.
Zur Herstellung der Schichten 9, 13 wird vorzugsweise ein Target mit erfindungsgemäßem Glasmaterial durch Elektronenstrahlverdampfung verdampft und auf dem Substrat 1 abgeschieden.To produce the layers 9, 13, a target with glass material according to the invention is preferably evaporated by electron beam evaporation and deposited on the substrate 1.
Als Glasmaterial zur Herstellung der Isolationsschichten 9, 13 wird insbesondere ein erfindungsgemäßes Glas verwendet, welches als aufgebrachte Schicht mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in zumindest einem Frequenzbereich oberhalb von 1 GHz einen Verlustfaktor tanδ kleiner oder gleich 50*10~4 aufweist. Besonders geeignet aufgrund seiner hervorragenden Hochfrequenzeigenschaften sind dazu die oben beschriebenen Gläser 8329 und insbesondere G018-189.A glass according to the invention is used in particular as the glass material for producing the insulation layers 9, 13, which, as an applied layer with a layer thickness in the range between 0.05 μm to 5 mm, has a loss factor tan δ less than or equal to 50 * 10 in at least one frequency range above 1 GHz ~ 4 . The above-described glasses 8329 and in particular G018-189 are particularly suitable for this due to its excellent high-frequency properties.
Fig. 2 zeigt eine Schnittdarstellung einer weiterenFig. 2 shows a sectional view of another
Ausführungsform eines erfindungsgemäßen Bauelements 10. Diese Ausführungsform weist auf zwei gegenüberliegenden Seiten 3 und 5 jeweils eine Hochfrequenz-Leiteranordnung 41, beziehungsweise 42 auf. Die Leiteranordnungen 41 und 42 sind dabei in analoger Weise wie die Leiteranordnung 4 der in Fig. 1 dargestellten Ausführungsform aufgebaut.Embodiment of a component 10 according to the invention. This embodiment has a high-frequency conductor arrangement 41 and 42 on two opposite sides 3 and 5, respectively. The conductor arrangements 41 and 42 are constructed analogously to the conductor arrangement 4 of the embodiment shown in FIG. 1.
Im einzelnen weisen die Leiteranordnungen 41 und 42 dabei jeweils wieder eine Glasschicht 9 aus aufgedampftem Glas mit Öffnungen auf, in denen leitendes Material zurIn detail, the conductor arrangements 41 and 42 each have a glass layer 9 made of vapor-deposited glass with openings in which conductive material is used
Durchkontaktierung vorhanden ist und in elektrischem Kontakt mit unter den Öffnungen angeordneten Kontaktierungsbereichen . steht. Auf den Glasschichten 9 der Leiteranordnungen 41, beziehungsweise 42 sind jeweils Lagen 6 mit Leiterstrukturen angeordnet, die ihrerseits mit den Durchkontaktierungen in Kontakt sind. Ebenso wie bei der in Fig. 1 gezeigten Ausführungsform sind die Leiterstrukturen auf der Glasschicht 9 mit weiteren, abschließenden Aufdampfglasschichten 13 abgedeckt, in denen Durchkontaktierungen 15 für den Anschluß des Bauelements vorhanden sind.Through-contacting is present and in electrical contact with contacting areas arranged under the openings. stands. Layers 6 with conductor structures are arranged on the glass layers 9 of the conductor arrangements 41 and 42, which are in turn in contact with the plated-through holes. As in the embodiment shown in FIG. 1, the conductor structures on the glass layer 9 are covered with further, final vapor-deposition glass layers 13, in which plated-through holes 15 are provided for the connection of the component.
Die Fig. 3A bis 3G zeigen anhand von Querschnittansichten die Schritte zur Herstellung eines erfindungsgemäßen Bauelements gemäß einer Ausführungsform des erfindungsgemäßen Verfahrens.3A to 3G show, using cross-sectional views, the steps for producing a component according to the invention in accordance with an embodiment of the method according to the invention.
Die Fig. 3A zeigt ein Substrat 1 nach einem ersten Verarbeitungsschritt, bei welchem auf die Seite, auf welche die Hochfrequenz-Leiteranordnung aufgebracht wird, eine Lage 6 mit Leiterstrukturen 61 - 64, wie insbesondere von geeigneten Leiterbahnen hergestellt wird. Diese können beispielsweise Kontaktstellen von in Fig. 3A nicht dargestellten elektronischen Bauelementen des Substrats sein, oder an solche Kontaktstellen anschließen.FIG. 3A shows a substrate 1 after a first processing step, in which a layer 6 with conductor structures 61-64, such as in particular of suitable conductor tracks, is produced on the side to which the high-frequency conductor arrangement is applied. these can For example, contact points of electronic components of the substrate, not shown in FIG. 3A, or connect to such contact points.
Nachfolgend wird in weiteren Verfahrensschritten eine Glasschicht abgeschieden, die Öffnungen über Kontaktierungsbereichen 71 -74 der darunter liegenden Oberfläche aufweist. Dazu wird zunächst, wie anhand von Fig. 3B dargestellt ist, in einem weiteren Schritt eine strukturierte Zwischenschicht mit Strukturen 21 aufgebracht, welche die jeweiligen Kontaktierungsbereiche 71 - 74 abdecken. Dies wird bevorzugt durch photolithographisches Strukturieren einer geeigneten Photolack-Beschichtung bewerkstelligt. Alternativ kann jedoch auch ein anderes Verfahren, wie beispielsweise ein Bedrucken der Oberfläche eingesetzt werden, um die Strukturen 21 zu erzeugen.Subsequently, in further process steps, a glass layer is deposited, which has openings over contact areas 71-74 of the underlying surface. For this purpose, as shown in FIG. 3B, a structured intermediate layer with structures 21, which cover the respective contacting regions 71-74, is applied in a further step. This is preferably accomplished by photolithographically structuring a suitable photoresist coating. Alternatively, however, another method, such as printing on the surface, can be used to produce the structures 21.
Anschließend wird, wie anhand von Fig. 3C dargestellt ist, eine Glasschicht 9 aufgedampft, welche sowohl die mit den Strukturen 21 der Zwischenschicht bedecktenSubsequently, as is shown with reference to FIG. 3C, a glass layer 9 is evaporated, which covers both those with the structures 21 of the intermediate layer
Kontaktierungsbereiche 71 - 74, als auch die umgebenden Bereiche der Oberfläche der Unterlage bedeckt. Vorzugsweise ist dabei die Dicke der Glasschicht 9 geringer als die Dicke der strukturierten Zwischenschicht. Die Zwischenschicht wird dann entfernt, wobei die Bereiche 90 der Glasschicht 9, welche die Strukturen 21 der Zwischenschicht bedecken, beziehungsweise welche sich auf der strukturierten Zwischenschicht befinden, mit abgehoben werden.Contacting areas 71-74, as well as the surrounding areas of the surface of the base covered. The thickness of the glass layer 9 is preferably less than the thickness of the structured intermediate layer. The intermediate layer is then removed, with the regions 90 of the glass layer 9 which cover the structures 21 of the intermediate layer or which are located on the structured intermediate layer being lifted off as well.
Fig. 3D zeigt das Substrat nach diesem Schritt, welches dementsprechend nun eine Glasschicht 9 mit Öffnungen 8 über den Kontaktierungsbereichen 71 - 74 der darunter liegenden Oberfläche aufweist. Die Öffnungen 8 können dann, wie in Fig. 3E gezeigt ist, beispielsweise mit einem leitenden Material 19 aufgefüllt werden. Auf der Glasschicht 9 kann dann eine Lage 11 mit Leiterstrukturen 111, 112, 113 und passiven Bauelementen 23 aufgebracht werden, wie Fig. 3F zeigt. Die Bauelemente 23 können beispielsweise ein Kondensator, ein Widerstand, eine Spule, ein Varistor, ein PTC, ein NTC, oder ein Filterelement umfassen. Kondensatoren und Spulen lassen sich insbesondere auch durch Leiterstrukturen übereinanderliegender, durch eine Aufdampfglasschicht zueinander isolierter Lagen realisieren. Beispielsweise kann dazu eine Leiterstruktur der Lage 6 und eine weitere, darüber liegende Leiterstruktur der Lage 11 verwendet werden.3D shows the substrate after this step, which accordingly now has a glass layer 9 with openings 8 above the contacting areas 71-74 of the surface below. The openings 8 can then, as shown in FIG. 3E, be filled with a conductive material 19, for example. Then on the glass layer 9 Layer 11 with conductor structures 111, 112, 113 and passive components 23 are applied, as shown in FIG. 3F. The components 23 can comprise, for example, a capacitor, a resistor, a coil, a varistor, a PTC, an NTC, or a filter element. Capacitors and coils can in particular also be realized by means of conductor structures of layers lying one above the other and insulated from one another by a vapor deposition glass layer. For example, a conductor structure of the layer 6 and a further conductor structure of the layer 11 lying above it can be used.
Das Aufbringen der Leiterstrukturen kann beispielsweise durch Aufbringen einer weiteren, negativ strukturierten Zwischenschicht und das Abscheiden von elektrisch leitendem Material erfolgen, wobei die Leiterstrukturen 111, 112, 113 in Kontakt mit dem leitenden Material 19 in den Öffnungen 8 kommt, so daß auch eine elektrische Verbindung, beziehungsweise ein elektrischer Kontakt mit den jeweiligen zugeordnete Kontaktierungsbereichen 71 - 74 entsteht.The conductor structures can be applied, for example, by applying a further, negatively structured intermediate layer and the deposition of electrically conductive material, the conductor structures 111, 112, 113 coming into contact with the conductive material 19 in the openings 8, so that an electrical connection is also made , or an electrical contact with the respective associated contacting areas 71 - 74 arises.
Die Leiterstrukturen können auch Strukturen mit unterschiedlichen leitenden Materialien oder auch Halbleitermaterialien aufweisen, beispielsweise indem das Aufbringen der Leiterstrukturen in mehreren Schritten unter Verwendung unterschiedlicher Materialien erfolgt. Damit können noch weitere Funktionalitäten in die Leiteranordnung integriert werden, beispielsweise, indem dadurch Halbleiter- Metall-Kontakte oder thermoelektrische Kontakte geschaffen werden.The conductor structures can also have structures with different conductive materials or also semiconductor materials, for example by applying the conductor structures in several steps using different materials. This allows further functionalities to be integrated into the conductor arrangement, for example by creating semiconductor-metal contacts or thermoelectric contacts.
Das in Fig. 3E gezeigte Herstellen der Durchkontaktierungen durch die Glasschicht 9 mit leitendem Material 19 und das in Fig. 3F dargestellte Aufbringen der Leiterstrukturen kann auch in einem Schritt erfolgen. Beispielsweise können die Leiterstrukturen 19 durch galvanisches Abscheiden hergestellt werden, so daß das abgeschiedene Material ausgehend von den Kontaktierungsbereichen 71 - 74 zunächst die Öffnungen 8 ausfüllt und dann weiter auf der Oberfläche der Glasschicht 9 aufwächst, wo es die Leiterstrukturen bildet, und auch, falls vorgesehen, die passiven Bauelemente 23 bilden kann. Ebenso können die Leiterstrukturen 111, 112, 113 auch durch Aufdampfen oder Aufsputtern hergestellt werden, wobei auch die Kontaktierungsbereiche 71 - 74 und Ränder der Öffnungen 8 mit bedampft oder beschichtet werden können, so daß die jeweiligen Leiterstrukturen in elektrischen Kontakt mit den Kontaktierungsbereichen 71 - 74 kommen.The production of the plated-through holes through the glass layer 9 with conductive material 19 shown in FIG. 3E and the application of the conductor structures shown in FIG. 3F can also take place in one step. For example, the conductor structures 19 can be produced by galvanic deposition so that the deposited material, starting from the contacting areas 71-74, first fills the openings 8 and then continues to grow on the surface of the glass layer 9, where it forms the conductor structures, and also, if provided, can form the passive components 23. Likewise, the conductor structures 111, 112, 113 can also be produced by vapor deposition or sputtering, the contacting regions 71-74 and edges of the openings 8 also being able to be vapor-coated or coated, so that the respective conductor structures are in electrical contact with the contacting regions 71-74 come.
Die Zwischenschicht kann anschließend wieder entfernt werden, wobei auf der Zwischenschicht abgeschiedenes leitendes Material abgehoben wird und die vorgesehenen Leiterstrukturen und eventuell aufgebrachten Bauelemente auch der Oberfläche der Glasschicht 9 zurückbleiben.The intermediate layer can then be removed again, wherein conductive material deposited on the intermediate layer is lifted off and the provided conductor structures and possibly applied components also remain on the surface of the glass layer 9.
Die in den Fig. 3B bis 3F gezeigten Schritte des Abscheidens einer strukturierten Glasschicht mit Öffnungen überThe steps shown in FIGS. 3B to 3F of depositing a structured glass layer with openings above
Kontaktierungsbereichen durch Aufdampfen unter Verwendung erfindungsgemäßen Glasmaterials, wie beispielsweise des Glases G018-189 auf das Substrat und des Aufbringens von Leiterstrukturen, können dann zur Herstelllung weiterer Lagen der Leiteranordnung wiederholt werden. Dabei wird eine nachfolgend aufgebrachten Leiterstruktur mit einem Kontaktierungsbereich einer vorhergehend aufgebrachten Leiterstruktur in Kontakt gebracht.Contacting areas by vapor deposition using glass material according to the invention, such as, for example, glass G018-189 on the substrate and the application of conductor structures, can then be repeated to produce further layers of the conductor arrangement. In this case, a subsequently applied conductor structure is brought into contact with a contact area of a previously applied conductor structure.
Dazu wird wieder, wie in Fig. 3F bis 3G gezeigt, eine Zwischenschicht mit Strukturen 21 auf vorgesehene Kontaktierungsbereiche 75, 76 der Oberfläche des beschichteten Substrats 1 aufgebracht, wobei die Kontaktierungsbereiche sich zweckmäßigerweise auf aufgebrachten Leiterstrukturen, oder auch auf Durchkontaktierungen befinden. Anschließend wird eine weitere isolierende Glasschicht 91 mit Durchkontaktierungen durch Öffnungen in der Glasschicht 91 über den Kontaktierungsbereichen 75, 76 hergestellt, wobei die Herstellung analog zu den anhand der Fig. 3C bis 3E beschriebenen Verfahrensschritten erfolgt.For this purpose, as shown in FIGS. 3F to 3G, an intermediate layer with structures 21 is again applied to the provided contacting areas 75, 76 of the surface of the coated substrate 1, the contacting areas expediently being applied to applied conductor structures, or else Vias. A further insulating glass layer 91 with vias is then produced through openings in the glass layer 91 above the contacting areas 75, 76, the production taking place analogously to the method steps described with reference to FIGS. 3C to 3E.
Die Fig. 4A bis 4E zeigen eine Variante der anhand der Fig. 3B bis 3E gezeigten Verfahrensschritten des erfindungsgemäßen Verfahrens. Diese Variante des erfindungsgemäßen Verfahrens basiert darauf, vor dem Aufdampfen der Glasschicht auf die Kontaktierungsbereiche ein leitendes, gegenüber zum jeweiligen Kontaktierungsbereich benachbarten Bereichen hervorragendes Material aufzubringen, welches von der Struktur der Zwischenschicht bedeckt wird. Dieses leitfähige Material bildet dann später die Durchkontaktierung.4A to 4E show a variant of the method steps of the method according to the invention shown with reference to FIGS. 3B to 3E. This variant of the method according to the invention is based on applying a conductive material, which is adjacent to the respective contacting area and which is covered by the structure of the intermediate layer, on the contacting areas before the vapor deposition of the glass layer. This conductive material then forms the via.
Im einzelnen wird zunächst, ausgehend von einem wie in Fig. 3A vorbereiteten Substrat 1 eine leitende Schicht 25 aus und darauf eine photostrukturierbare Zwischenschicht 27 aufgebracht, wie anhand von Fig. 4A dargestellt ist.In detail, first of all, starting from a substrate 1 as prepared in FIG. 3A, a conductive layer 25 is applied and a photostructurable intermediate layer 27 is applied thereon, as is illustrated with reference to FIG. 4A.
Fig. 4B zeigt das Substrat nach einer photolithographischen Strukturierung der Zwischenschicht 27. Die Schicht wird so strukturiert, daß Strukturen 21 stehen bleiben, welche die vorgesehenen Kontaktierungsbereiche 71 - 74 abdecken. Anschließend wird, wie Fig. 4C zeigt, die leitende Schicht 25 von den nicht bedeckten, die Kontaktierungsbereiche 71 - 74 umgebenden Bereichen entfernt. Dies kann in fachüblicher Weise beispielsweise durch Ätzen erfolgen. Dementsprechend werden die Kontaktierungsbereiche 71 - 74 von einem leitenden Material bedeckt, welches gegenüber zum jeweiligen Kontaktierungsbereich benachbarten Bereichen erhaben ist, beziehungsweise hervorragt und welches jeweils von einer Struktur 21 der Zwischenschicht 27 bedeckt wird. Anschließend wird, wie in Fig. 4D gezeigt, die isolierende Glasschicht 9 durch Verdampfen von erfindungsgemäßem Glasmaterial aufgedampft, wobei vorzugsweise die Dicke der Glasschicht 9 so gewählt wird, daß sie in etwa der Dicke des erhabenen leitenden Materials 19 entspricht. Schließlich werden die Strukturen 21 der Zwischenschicht, beispielsweise durch Anwendung eines geeigneten Lösungsmittels entfernt und dabei die Bereiche 90 der Glasschicht 9, welche die Strukturen 21 bedecken, abgehoben. Auf diese Weise wird ein Substrat mit einer Glasschicht erhalten, die Öffungen über den jeweiligen Kontaktierungsbereichen und Durchkontaktierungen in Gestalt des in den Öffnungen befindlichen leitenden Materials aufweist. Dieser Verarbeitungszustand ist in Fig. 4E gezeigt. Durch die geeignete Wahl der an die Dicke des leitenden Materials 19 angepaßten Schichtdicke der Glasschicht 9 sind die Oberfläche des leitenden Materials und der Glasschicht 9 in etwa auf gleicher Höhe, so daß eine ebene Oberfläche erhalten wird. Das Verfahren kann anschließend weiter wie anhand der Fig. 3F bis 3G erläutert ist, fortgesetzt werden, wobei auch die zweite Glasschicht 91 in Fig. 3G und eventuelle weitere Glasschichten mit Durchkontaktierungen in gleicher oder ähnlicher Weise hergestellt werden können, wie anhand der Fig. 4A bis 4E erläutert wurde.4B shows the substrate after a photolithographic structuring of the intermediate layer 27. The layer is structured in such a way that structures 21 remain which cover the contacting areas 71-74 provided. Subsequently, as shown in FIG. 4C, the conductive layer 25 is removed from the uncovered regions surrounding the contacting regions 71-74. This can be done in a customary manner, for example by etching. Accordingly, the contacting areas 71-74 are covered by a conductive material which is raised or protrudes from areas adjacent to the respective contacting area and which is covered in each case by a structure 21 of the intermediate layer 27. Then, as shown in FIG. 4D, the insulating glass layer 9 is evaporated by evaporating glass material according to the invention, the thickness of the glass layer 9 preferably being selected so that it approximately corresponds to the thickness of the raised conductive material 19. Finally, the structures 21 of the intermediate layer are removed, for example by using a suitable solvent, and the areas 90 of the glass layer 9 which cover the structures 21 are lifted off. In this way, a substrate with a glass layer is obtained, which has openings above the respective contacting areas and plated-through holes in the form of the conductive material located in the openings. This processing state is shown in Fig. 4E. Due to the suitable choice of the layer thickness of the glass layer 9 adapted to the thickness of the conductive material 19, the surface of the conductive material and the glass layer 9 are approximately at the same height, so that a flat surface is obtained. The method can then be continued as explained with reference to FIGS. 3F to 3G, the second glass layer 91 in FIG. 3G and any further glass layers with plated-through holes also being able to be produced in the same or similar manner as in FIG. 4A until 4E was explained.
Gemäß einer vorteilhaften Weiterbildung des Verfahrens werden die Bauelemente 10 durch Beschichten von Substraten im Waferverbund hergestellt. Die Fig. 5 bis 7 zeigen dazu verschiedene Ausführungsformen beschichteter Wafer 2, wobei die Bauelemente durch Abtrennen einzelner Substrate 1 vom Wafer erhalten werden.According to an advantageous development of the method, the components 10 are produced by coating substrates in the wafer composite. 5 to 7 show various embodiments of coated wafers 2, the components being obtained by separating individual substrates 1 from the wafer.
Fig. 5 zeigt eine Ausführung der Erfindung, bei welcher ein Halbleiterwafer 2 mit einer Folge aus Glas- bzw. Leiterbahnenschichten versehen worden ist. Bevorzugt wird als Wafermaterial hierzu Silizium verwendet, da dieses Material einen sehr gut mit dem Aufdampfglas übereinstimmenden Temperaturausdehnungskoeffizienten aufweist. Die einzelnen Substrate 1 werden nach der5 shows an embodiment of the invention in which a semiconductor wafer 2 with a sequence of glass or Conductor layers have been provided. Silicon is preferably used as the wafer material for this purpose, since this material has a temperature expansion coefficient which corresponds very well with the vapor deposition glass. The individual substrates 1 are after
Beschichtung im Waferverbund und dem Herstellen des in Fig. 5 gezeigten Verarbeitungszustandes durch Abtrennen entlang der vorgesehenen Trennnachsen 29 abgetrennt, um schließlich Bauelemente 10 mit hochfrequenzfähiger Leiterstruktur zu erhalten.The coating in the wafer assembly and the production of the processing state shown in FIG. 5 are separated by cutting along the intended separating axes 29 in order finally to obtain components 10 with a high-frequency conductor structure.
Der Wafer 2 weist auf einer ersten Seite 3 einzelne aktive Halbleiter-Bereiche 33 auf, die mit Anschlußstellen 35 verbunden sind.The wafer 2 has on a first side 3 individual active semiconductor regions 33 which are connected to connection points 35.
Die Leiteranordnung 4 ist bei dieser Ausführungsform der Erfindung auf einer zweiten Seite 5 des Wafers 2, beziehungsweise der Substrate 1 des Wafers 2 angeordnet, welche der ersten Seiten mit den aktiven Halbleiter-Bereichen 33 gegenüberliegt.In this embodiment of the invention, the conductor arrangement 4 is arranged on a second side 5 of the wafer 2 or the substrates 1 of the wafer 2, which lies opposite the first sides with the active semiconductor regions 33.
Die Leiteranordnung 4 ist zum Zwecke der Übersichtlichkeit vereinfacht dargestellt, wobei hier unter anderem alle Leiterstrukturen mit dem Bezugszeichen 100 bezeichnet sind. Die einzelnen Lagen der Leiteranordnung 4 können vorteilhaft wie anhand der Fig. 3A bis 3G und/oder der Fig. 4A bis 4E erläutert wurde, hergestellt werden. Insbesondere ist die in Fig. 5 gezeigte Leiteranordnung 4 auch mehrlagig gefertigt, wobei dazu entsprechend die Schritte des Abscheidens einer strukturierten Glasschicht und des Aufbringens vonThe conductor arrangement 4 is shown in a simplified manner for the sake of clarity, with all conductor structures being designated by reference number 100 here, among other things. The individual layers of the conductor arrangement 4 can advantageously be produced as explained with reference to FIGS. 3A to 3G and / or FIGS. 4A to 4E. In particular, the conductor arrangement 4 shown in FIG. 5 is also made in multiple layers, with the steps of depositing a structured glass layer and applying
Leiterstrukturen 100 entsprechend mehrfach durchgeführt werden, und wobei eine nachfolgend aufgebrachte Leiterstruktur 100 mit einem Kontaktierungsbereich einer vorhergehend aufgebrachten Leiterstruktur 100 in Kontakt gebracht wird. In den Wafer 2 sind außerdem Durchkontaktierungen 37 durch die Substrate 1 eingefügt, welche mit den Anschlußstellen 35 elektrisch verbunden sind. Die Herstellung der Durchkontaktierung kann bevorzugt durch Ätzen von Ätzgruben in den Wafer von der zweiten Seite 5 her bis auf die vorzugsweise metallischen Anschlußstellen 35 erfolgen, die gleichzeitig als Ätzstop wirken. Anschließend wird eine Passivierungsschicht 39 auf den Wänden der Ätzgrube erzeugt und die Ätzgrube mit leitendem Material 43 aufgefüllt. Das auf der Seite 3 offenliegende leitende Material 43 der Durchkontaktierungen 37 dient als Kontaktierungsbereich für Leiterstrukturen 100 der Leiteranordnung 4.Conductor structures 100 are accordingly carried out several times, and a subsequently applied conductor structure 100 is brought into contact with a contact area of a previously applied conductor structure 100. Through-contacts 37 are also inserted into the wafer 2 through the substrates 1, which are electrically connected to the connection points 35. The plated-through hole can preferably be produced by etching etching pits in the wafer from the second side 5 to the preferably metallic connection points 35, which simultaneously act as an etching stop. A passivation layer 39 is then produced on the walls of the etching pit and the etching pit is filled with conductive material 43. The conductive material 43 of the plated-through holes 37, which is exposed on the side 3, serves as a contact area for conductor structures 100 of the conductor arrangement 4.
Die Bereiche der Oberfläche der zweiten Seite 5 mit den Durchkontaktierungen werden außerdem alsThe areas of the surface of the second side 5 with the plated-through holes are also shown as
Kontaktierungsbereiche für einige der Leiterstrukturen 100 der Leiteranordnung 4 verwendet. Werden diese Leiterstrukturen 100 beim Aufbringen auf der zuvor abgeschiedenen Glasschicht 9 mit den Kontaktierungsbereichen in Kontakt gebracht, so werden die Leiterstrukturen dementsprechend dabei auch mit den Anschlußstellen 35 auf der ersten Seite der Substrate 1 elektrisch verbunden. Auf diese Weise können dann die aktive Halbleiter-Bereiche 33 über die Leiteranordnung versorgt und elektrische Signale von den aktiven Halbleiter-Bereichen auf die Leiterstrukturen 100 der Leiteranordnung 4 gegeben werden.Contacting areas are used for some of the conductor structures 100 of the conductor arrangement 4. If these conductor structures 100 are brought into contact with the contacting areas when they are applied to the previously deposited glass layer 9, the conductor structures are accordingly also electrically connected to the connection points 35 on the first side of the substrates 1. In this way, the active semiconductor regions 33 can then be supplied via the conductor arrangement and electrical signals from the active semiconductor regions can be applied to the conductor structures 100 of the conductor arrangement 4.
Zur Verkapselung und zum Schutz der später durch Abtrennen gewonnenen Bauelemente ist die in Fig. 5 gezeigteFor encapsulation and for protection of the components later obtained by separation, the one shown in FIG. 5 is shown
Ausführungsform auf der Seite 3 noch mit einer zusätzlichen Aufdampfglas-Verkapselungsschicht 14 und einer Kunststoff- Abdeckung 31 versehen. Fig. 6 zeigt eine weitere Ausführungsform der Erfindung, wobei ebenfalls im Waferverbund verbundene Substrate mit einer Leiteranordnung 4 beschichtet wurden. Diese Ausführungsform der Erfindung ist ähnlich zu der in Fig. 5 gezeigten Ausführungsform. Auch bei der in Fig. 6 gezeigten Ausführungsform wird ein Halbleiter-Wafer 2 mit aktiven Halbleiter-Bereichen 33 verwendet, die einzelnen Substraten 1 zugeordnet sind. Ebenso wie bei der in Fig. 5 gezeigten Ausführungsform werden beim Aufbringen der Leiterstrukturen 100 auf der ersten Glasschicht 9 der Leiteranordnung 4 die Anschlußstellen 35 der aktive Halbleiter-Bereiche 33 mit Leiterstrukturen 100 in Verbindung gebracht.Embodiment on page 3 also provided with an additional vapor deposition encapsulation layer 14 and a plastic cover 31. FIG. 6 shows a further embodiment of the invention, substrates which have also been connected in the wafer composite being coated with a conductor arrangement 4. This embodiment of the invention is similar to the embodiment shown in FIG. 5. A semiconductor wafer 2 with active semiconductor regions 33, which are assigned to individual substrates 1, is also used in the embodiment shown in FIG. 6. As in the embodiment shown in FIG. 5, when the conductor structures 100 are applied to the first glass layer 9 of the conductor arrangement 4, the connection points 35 of the active semiconductor regions 33 are connected to conductor structures 100.
Im Unterschied zu der in Fig. 5 gezeigten Ausführungsform werden die Glasschichten 9, 91, 92, 93 und 13 derIn contrast to the embodiment shown in FIG. 5, the glass layers 9, 91, 92, 93 and 13 of the
Leiteranordnung 4 jedoch auf der ersten Seite 3 der Substrate 1, auf welcher auch die aktive Halbleiter-Bereiche 33 angeordnet sind, aufgedampft. Die Durchkontaktierungen 15 in der untersten Glasschicht 9 der Leiteranordnung 4 werden direkt auf den Kontaktstellen 35 aufgebracht, wobei dieHowever, conductor arrangement 4 is evaporated on the first side 3 of the substrates 1, on which the active semiconductor regions 33 are also arranged. The plated-through holes 15 in the lowermost glass layer 9 of the conductor arrangement 4 are applied directly to the contact points 35, the
Kontaktstellen 35 dementsprechend die Kontaktierungsbereiche der Substrate 1 für die entsprechenden Leiterstrukturen 100 auf der ersten Glasschicht 9 bilden.Accordingly, contact points 35 form the contacting areas of the substrates 1 for the corresponding conductor structures 100 on the first glass layer 9.
Die Bauelemente 10, die durch Abtrennen von den beschichteten Wafern 2 gewonnen werden, wie sie beispielhaft in den Fig. 5 und 6 dargestellt sind, können beispielsweise als Hochfrequenz- Sende-/Empfangsmodule für Frequenzen oberhalb von 10 GHz, insbesondere für Frequenzen im Bereich um 40GHz oder höher ausgebildet sein.The components 10, which are obtained by separating from the coated wafers 2, as are shown by way of example in FIGS. 5 and 6, can be used, for example, as high-frequency transmission / reception modules for frequencies above 10 GHz, in particular for frequencies in the region around 40GHz or higher.
Fig. 7 zeigt noch eine weitere Ausführungsform von Substraten 1, die im Waferverbund erfindungsgemäß mit einer Hochfrequenz-Leiteranordnung 4 versehen wurden. Die Leiteranordnung 4 mit den Glasschichten 9, 91, 92, 93, 13 und den Leiterstrukturen 100 ist hier auf einem Wafer aufgebracht, dessen Substrate 1 ebenfallsFIG. 7 shows yet another embodiment of substrates 1 which, according to the invention, have been provided with a high-frequency conductor arrangement 4 in the wafer assembly. The conductor arrangement 4 with the glass layers 9, 91, 92, 93, 13 and the conductor structures 100 is here applied to a wafer, the substrates 1 of which are also
Durchkontaktierungen 37 aufweisen. Die Bauelemente 10 mit Substrate 1 und Leiteranordnungen 4 dienen nach dem Abtrennen vom Wafer als Hochfrequenz-Umverdrahtungssubstrat für weitere Bauelemente, die mit den außen liegenden Kontaktstellen der Bauelemente 10 verbunden werden können. Die außen liegenden Kontaktstellen sind dazu beispielhaft mit Lötperlen 17 versehen, so daß weitere Bauelemente in SMT-Technologie befestigt und angeschlossen werden können. Die Substrate 1 weisen hier keine aktiven Bauelemente auf. Dementsprechend kann der Substratwafer 2 auch aus isolierendem Material, wie beispielsweise Glas oder Kunststoff gefertigt werden. Ein besonders gut geeignetes Glas als Material für den Wafer, beziehungsweise die Substrate 1 der Bauelemente 10 istHave vias 37. The components 10 with substrates 1 and conductor arrangements 4 serve after the separation from the wafer as a high-frequency rewiring substrate for further components that can be connected to the external contact points of the components 10. For this purpose, the external contact points are provided with soldering beads 17, for example, so that further components in SMT technology can be attached and connected. The substrates 1 have no active components here. Accordingly, the substrate wafer 2 can also be made from insulating material, such as glass or plastic. A particularly well-suited glass as material for the wafer or the substrates 1 of the components 10 is
Borofloat®-Glas, welches einen nahezu mit dem bevorzugten Aufdampfglas übereinstimmenden Temperaturausdehnungskoeffizienten aufweist.Borofloat ® glass, which has a thermal expansion coefficient that almost matches the preferred vapor deposition glass.
Fig. 8 zeigt den für die Charakterisierung der HFFig. 8 shows that for the characterization of the HF
Eigenschaften schematischen Layeraufbau mit den Schichtdicken der vermessenen Teststrukturen. In den Fig. 9 und 10 sind realisierte Strukturen von offenen und vergrabenen Coplanarleitungen dargestellt. Nachfolgende Messungen der Streuparameter S12, S21, Sll und S22 konnten anhand dieserProperties of schematic layer structure with the layer thicknesses of the measured test structures. Realized structures of open and buried coplanar lines are shown in FIGS. 9 and 10. Subsequent measurements of the scattering parameters S12, S21, Sll and S22 were able to do this
Strukturen realisiert werden. Die Probenbezeichnungen zu den ausgewählten Messungen, die in den Fig. 12 bis 23 gezeigt sind, sind aus der Tabelle in Fig.11 zu entnehmen.Structures can be realized. The sample designations for the selected measurements, which are shown in FIGS. 12 to 23, can be found in the table in FIG. 11.
Die Fig. 12 bis 14 zeigen den Betrag der Streuparameter Sll und S22 , S12 und S21 sowie den Phasenverlauf des Streuparameters S12 und S21 einer offenen Coplanarleitung unter Verwendung des Glases 8329 als Isolator zwischen den Aluminiumleiterbahnen. Die Streuparameter S12 und S21 werden auch als Durchgangsdämpfung und die Streuparameter Sll und S22 als Reflexionsdämpfung bezeichnet.12 to 14 show the magnitude of the scattering parameters S11 and S22, S12 and S21 and the phase profile of the scattering parameters S12 and S21 of an open coplanar line using glass 8329 as an insulator between the aluminum conductor tracks. The scattering parameters S12 and S21 are also used as transmission loss and the scattering parameters Sll and S22 referred to as reflection loss.
Deutlich zeigt sich in Fig. 12 eine extrem geringe Reflektion Sll und S22 der Signale an dieser Probe von -20dB bis -40dB bis zu einer Frequenz von 50GHz. Weiterhin sind geringe12 shows an extremely low reflection S11 and S22 of the signals on this sample from -20dB to -40dB up to a frequency of 50GHz. Furthermore, are minor
Dämpfungswerte von kleiner <-2dB bei den Streuparametern S12 und S21 anhand der in Fig. 13 dargestellten Meßwerte bis zu einer Frequenz von 50GHz zu erkennen. Die Streuparameter S21 und S12, stellen das sind die Werte der Durchleitung des elektrischen Signals bei der jeweiligen Frequenz dar. , bis zu einer Frequenz von 50GHz zu erkennen. Der lineare Phasenverlauf des Streuparameters S21 weist auf eine sehr geringe Dispersion bis zu einer Frequenz von 50GHz hin.Attenuation values of less than -2 dB for the scattering parameters S12 and S21 can be recognized on the basis of the measured values shown in FIG. 13 up to a frequency of 50 GHz. The scattering parameters S21 and S12 represent the values of the transmission of the electrical signal at the respective frequency. Up to a frequency of 50 GHz can be recognized. The linear phase profile of the scattering parameter S21 indicates a very low dispersion up to a frequency of 50GHz.
Die anhand der Fig. 12 bis 14 gezeigten Meßwerte lassen sich auch bei Messungen an weiteren Proben verifizieren, wobei dieThe measured values shown with reference to FIGS. 12 to 14 can also be verified during measurements on further samples, the
Figurencharacters
Fig. 15 bis 17: Messwerte an einer vergrabenen15 to 17: Measured values on a buried one
Coplanarleitung mit Glas 8329, Fig. 18 bis 20: Messwerte an einer offenen Coplanarleitung mit Glas 8329, undCoplanar line with glass 8329, Fig. 18 to 20: Measured values on an open coplanar line with glass 8329, and
Fig. 21 bis 23: Messwerte an einer vergrabenen21 to 23: Measured values on a buried one
Coplanarleitung mit Glas G018-189 zeigen.Show coplanar line with glass G018-189.
Bei diesen Messungen zeigt sich eine Tendenz der geringerenThese measurements show a tendency towards the lower
Dämpfung der Streuparameter S12 und S21 bei Verwendung des HF Glases G018-189. BezugszeichenlisteDamping of the scattering parameters S12 and S21 when using the HF glass G018-189. LIST OF REFERENCE NUMBERS
1 Substrat1 substrate
2 Halbleiterwafer2 semiconductor wafers
3 erste Seite von 1 4, 41, 42 Leiteranordnung3 first page of 1 4, 41, 42 conductor arrangement
5 zweite Seite von 15 second page of 1
6 Schicht mit Leiterstrukturen auf 1 61 - 64 Leiterstrukturen von 66 layer with conductor structures on 1 61 - 64 conductor structures of 6
71 - 74 Kontaktierungsbereiche71 - 74 contacting areas
8 Öffungen in 9 über Kontaktierungsbereichen 71 - 748 openings in 9 via contact areas 71 - 74
9, 91-93 Aufdampfglasschicht9, 91-93 vapor deposition glass layer
10 Bauelement10 component
11 Lage mit Leiterstrukturen 100, 111, Leiterstrukturen11 Layer with conductor structures 100, 111, conductor structures
112, 113112, 113
13 Abschließende Aufdampfglasschicht13 Final vapor deposition glass layer
14 Aufdampfglas-Verkapselungsschicht14 Evaporation glass encapsulation layer
15 Durchkontaktierung 17 Lötperlen15 plated-through holes 17 soldering beads
19 leitendes Material19 conductive material
21 Lackstrukturen einer Zwischenschicht21 lacquer structures of an intermediate layer
23 passives elektrisches Bauelement23 passive electrical component
25 leitende Schicht25 conductive layer
27 photostrukturierbare Zwischenschicht27 photostructurable intermediate layer
29 Trennachse29 separation axis
31 Kunststoff-Abdeckung31 plastic cover
33 Aktiver Halbleiter-Bereich33 Active semiconductor area
35 Anschlußstelle von 3335 junction of 33
37 Durchkontaktierung durch 137 plated-through hole through 1
39 Passivierungsschicht39 passivation layer
43 leitende Füllung von 37 5, 76 Kontaktierungsbereiche43 conductive filling of 37 5, 76 contacting areas
90 Bereich der Aufdampfglasschicht auf Lackstruktur 90 Area of the vapor deposition glass layer on lacquer structure

Claims

Patentansprüche claims
1. Glasmaterial zur Herstellung von Isolationsschichten für Hochfrequenz-Substrate oder Hochfrequenz- Leiteranordnungen, welches als aufgebrachte Schicht (9, 91, 92, 93, 13) insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm, bevorzugt im Bereich von 0,05 μm bis 1 mm in zumindest einem Frequenzbereich oberhalb von 1 GHz einen Verlustfaktor tanδ kleiner oder gleich 70*10~4 aufweist.1. Glass material for the production of insulation layers for high-frequency substrates or high-frequency conductor arrangements, which as an applied layer (9, 91, 92, 93, 13) in particular with a layer thickness in the range between 0.05 μm to 5 mm, preferably in the range of 0.05 μm to 1 mm in at least one frequency range above 1 GHz has a loss factor tan δ less than or equal to 70 * 10 ~ 4 .
2. Glasmaterial gemäß Anspruch 2, dadurch gekennzeichnet, daß das Material als aufgebrachte Schicht (9, 91, 92, 93, 13) insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm bei Frequenzen im Bereich um2. Glass material according to claim 2, characterized in that the material as an applied layer (9, 91, 92, 93, 13) in particular with a layer thickness in the range between 0.05 microns to 5 mm at frequencies around
40 GHz einen Verlustfaktor tanδ kleiner oder gleich 50*10"4 aufweist.40 GHz has a loss factor tan δ less than or equal to 50 * 10 "4 .
3. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Material als aufgebrachte Schicht (9, 91, 92, 93, 13) insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm bei einer Frequenz von 40GHz einen Verlustfaktor tanδ kleiner oder gleich 30*10~4 aufweist.3. Glass material according to one of the preceding claims, characterized in that the material as an applied layer (9, 91, 92, 93, 13) in particular with a layer thickness in the range between 0.05 microns to 5 mm at a frequency of 40 GHz a loss factor tan δ less than or equal to 30 * 10 ~ 4 .
Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial zum Abscheiden einer Schicht (9, 91, 92, 93, 13) verdampft werden kann.Glass material according to one of the preceding claims, characterized in that the glass material can be evaporated to deposit a layer (9, 91, 92, 93, 13).
Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial durch Elektronenstrahlverdampfung verdampft werden kann. Glass material according to one of the preceding claims, characterized in that the glass material can be evaporated by electron beam evaporation.
6. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial eine Verarbeitungstemperatur von kleiner als 1300 °C aufweist.6. Glass material according to one of the preceding claims, characterized in that the glass material has a processing temperature of less than 1300 ° C.
7. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in zumindest einem Frequenzbereich oberhalb von 1 GHz eine relative7. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer in particular with a layer thickness in the range between 0.05 μm to 5 mm in at least one frequency range above 1 GHz a relative
Dielektrizitätskonstante εR kleiner oder gleich fünf aufweist .Dielectric constant ε R is less than or equal to five.
8. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm bei einer Frequenz von 40 GHz eine relative Dielektrizitätskonstante εR kleiner oder gleich 5, insbesondere eine relative Dielektrizitätskonstante εR von < 5 aufweist.8. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm at a frequency of 40 GHz, has a relative dielectric constant ε R less than or equal to 5, in particular one has a relative dielectric constant ε R of <5.
9. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einen Temperaturausdehnungskoeffizienten α2o-3oo aufweist, der im Bereich von 2, 9xl0"6 K"1 bis 3,5xl0"6 K"1 liegt.9. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm in a temperature range from 20 ° C to 300 ° C, a coefficient of thermal expansion α 2 o -3 oo, which is in the range of 2, 9xl0 "6 K " 1 to 3.5xl0 "6 K " 1 .
10. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einen Temperaturausdehnungskoeffizienten α20-3θo = (3,2±0,2)xlO"6K_1 aufweist.10. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer in particular with a layer thickness in the range between 0.05 μm to 5 mm in a temperature range from 20 ° C to 300 ° C Thermal expansion coefficient α 20 -3θo = (3.2 ± 0.2) xlO "6 K _1 .
11. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht insbesondere mit einer Schichtdicke im Bereich zwischen 0,05 μm bis 5 mm in einem Temperaturbereich von 20 °C bis 300 °C einen ■ Temperaturausdehnungskoeffizienten aufweist, der vom Temperaturausdehnungskoeffizienten des Substratmaterials weniger als lxlO~6K"1 abweicht.11. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer, in particular with a layer thickness in the range between 0.05 μm to 5 mm in a temperature range from 20 ° C to 300 ° C, has a ■ coefficient of thermal expansion which is from Temperature expansion coefficient of the substrate material deviates less than lxlO ~ 6 K "1 .
12. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht säurebeständig gemäß Säurebeständigkeitsklasse 2 ist.12. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer is acid-resistant according to acid resistance class 2.
13. Glasmaterial gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Glasmaterial als aufgebrachte Schicht laugenbeständig gemäß Laugenbeständigkeitsklasse 3 ist.13. Glass material according to one of the preceding claims, characterized in that the glass material as an applied layer is alkali-resistant according to alkali resistance class 3.
14. Glasmaterial gemäß einem der vorstehenden Ansprüche, welches folgende Zusammensetzung in Gewichtsprozent aufweist:14. Glass material according to one of the preceding claims, which has the following composition in percent by weight:
Si02 40 - 90 ,Si0 2 40 - 90,
B203 10 - 40 ,B 2 0 3 10 - 40,
A1203 0 - 5 ,A1 2 0 3 0 - 5,
K20 0 - 5 ,K 2 0 0 - 5,
Li20 0 - 3 ,Li 2 0 0 - 3,
Na20 0 - 3 .Na 2 0 0 -3.
15. Glasmaterial gemäß einem der vorstehenden Ansprüche, welches folgende Zusammensetzung in Gewichtsprozent aufweist :15. Glass material according to one of the preceding claims, which has the following composition in percent by weight having :
Si02 60 - 90,Si0 2 60 - 90,
B203 105 - 305,B 2 0 3 105 - 305,
A1203 0 - 3, κ2o 0 - 3,A1 2 0 3 0 - 3, κ 2 o 0 - 3,
Li20 0 - 2,Li 2 0 0 - 2,
Na20 0 - 2.Na 2 0 0 - 2.
16. Glasmaterial gemäß einem der vorstehenden Ansprüche, welches folgende Zusammensetzung in Gewichtsprozent aufweist : Si02 71 ± 5,16. Glass material according to one of the preceding claims, which has the following composition in percent by weight: Si0 2 71 ± 5,
B203 26 ± 5,B 2 0 3 26 ± 5,
A1203 1 ± 0,2, K20 1 ± 0,2,A1 2 0 3 1 ± 0.2, K 2 0 1 ± 0.2,
Li20 0,5 ± 0,2,Li 2 0 0.5 ± 0.2,
Na20 0,5 ± 0,2.Na 2 0 0.5 ± 0.2.
17. Glasmaterial gemäß einem der vorstehenden Ansprüche, welches folgende Zusammensetzung in Gewichtsprozent aufweist :17. Glass material according to one of the preceding claims, which has the following composition in percent by weight:
Si02 84 ± 5,Si0 2 84 ± 5,
B203 11 ± 5,B 2 0 3 11 ± 5,
A1203 0,5 ± 0,2, K20 0, 3 ± 0,2,A1 2 0 3 0.5 ± 0.2, K 2 0 0, 3 ± 0.2,
Li20 0,3 ± 0,2,Li 2 0 0.3 ± 0.2,
Na20 2 ± 0,2.Na 2 0 2 ± 0.2.
18. Verwendung eines Glasmaterials gemäß einem der vorstehenden Ansprüche zur Herstellung einer18. Use of a glass material according to one of the preceding claims for producing a
Isolationsschicht (9, 91, 92, 93, 13) für eine Hochfrequenz-Leiterstruktur oder ein Hochfrequenz- Substrat. Insulation layer (9, 91, 92, 93, 13) for a high-frequency conductor structure or a high-frequency substrate.
19. Verfahren zur Herstellung eines Bauelements (10) mit Hochfrequenz-Leiteranordnung (4, 41, 42), mit den Schritten: -Abscheiden einer strukturierten Glasschicht (9, 91, 92, 93, 13) mit zumindest einer Öffnung (8) über einem Kontaktierungsbereich (71 - 74) auf einem Substrat (1) unter Verwendung eines Glasmaterials gemäß einem der vorstehenden Ansprüche, und -Aufbringen zumindest einer Leiterstruktur (100, 111, 112, 113) auf die Glasschicht (9, 91, 92, 93), welche einen elektrischen Kontakt mit dem Kontaktierungsbereich (71 - 74) aufweist.19. A method for producing a component (10) with a high-frequency conductor arrangement (4, 41, 42), comprising the steps: depositing a structured glass layer (9, 91, 92, 93, 13) with at least one opening (8) a contacting area (71-74) on a substrate (1) using a glass material according to one of the preceding claims, and -application of at least one conductor structure (100, 111, 112, 113) on the glass layer (9, 91, 92, 93) , which has an electrical contact with the contacting area (71-74).
20. Verfahren gemäß Anspruch 19, dadurch gekennzeichnet, daß die Glasschicht durch Verdampfen von Glasmaterial abgeschieden wird.20. The method according to claim 19, characterized in that the glass layer is deposited by evaporation of glass material.
21. Verfahren gemäß Anspruch 19 oder 20, dadurch gekennzeichnet, daß zumindest ein passives elektrisches Bauelement auf der Glasschicht (9, 91, 92, 93) aufgebracht wird, welches in Kontakt mit der zumindest einen Leiterstruktur ist.21. The method according to claim 19 or 20, characterized in that at least one passive electrical component is applied to the glass layer (9, 91, 92, 93), which is in contact with the at least one conductor structure.
22. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Schritte des Abscheidens einer strukturierten Glasschicht und des Aufbringens zumindest einer Leiterstruktur (111, 112, 113) mehrfach durchgeführt werden, wobei eine nachfolgend aufgebrachte Leiterstruktur mit einem Kontaktierungsbereich einer vorhergehend aufgebrachten Leiterstruktur in Kontakt gebracht wird.22. The method according to any one of the preceding claims, characterized in that the steps of depositing a structured glass layer and applying at least one conductor structure (111, 112, 113) are carried out several times, a subsequently applied conductor structure with a contact area of a previously applied conductor structure in Is brought in contact.
23. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß der Schritt des Abscheidens einer strukturierten Glasschicht (9, 91, 92, 93, 13) mit zumindest einer Öffnung (8) über einem Kontaktierungsbereich (71 - 74) durch Aufdampfen die Schritte umfaßt: -Aufbringen einer strukturierten Zwischenschicht (21), welche den Kontaktierungsbereich abdeckt, -Aufdampfen einer Glasschicht (9, 91, 92, 93, 13) auf das Substrat und die darauf befindliche strukturierte Zwischenschicht (21), wobei die Dicke der Glasschicht (9, 91, 92, 93, 13) vorzugsweise geringer ist als die der strukturierten Zwischenschicht (21) , und -Entfernen der strukturierten Zwischenschicht (21) , wobei die Bereiche (90) der Glasschicht (9, 91, 92, 93, 13) , die sich auf der strukturierten Zwischenschicht (21) befinden, mit abgehoben werden.23. The method according to any one of the preceding claims, characterized in that the step of depositing a structured glass layer (9, 91, 92, 93, 13) with at least one opening (8) over a contacting area (71 - 74) by vapor deposition comprises the steps: - applying a structured intermediate layer (21) which covers the contacting area, Evaporation of a glass layer (9, 91, 92, 93, 13) onto the substrate and the structured intermediate layer (21) thereon, the thickness of the glass layer (9, 91, 92, 93, 13) preferably being less than that of the structured one Intermediate layer (21) and removal of the structured intermediate layer (21), wherein the areas (90) of the glass layer (9, 91, 92, 93, 13) which are located on the structured intermediate layer (21) are also lifted off.
24. Verfahren gemäß Anspruch 23, dadurch gekennzeichnet, daß vor dem Aufdampfen der Glasschicht auf den zumindest einen Kontaktierungsbereich (71 - 74) ein leitendes, gegenüber den Kontaktierungsbereichen benachbarten24. The method according to claim 23, characterized in that before the vapor deposition of the glass layer on the at least one contacting area (71-74) a conductive, adjacent to the contacting areas
Bereichen hervorragendes Material (19) aufgebracht wird, welches von der strukturierten Zwischenschicht (21) bedeckt wird.Regions of excellent material (19) is applied, which is covered by the structured intermediate layer (21).
25. Verfahren gemäß Anspruch 23 oder 24, dadurch gekennzeichnet, daß die strukturierte Zwischenschicht (21) durch Bedrucken oder photolithographisches Strukturieren hergestellt wird.25. The method according to claim 23 or 24, characterized in that the structured intermediate layer (21) is produced by printing or photolithographic structuring.
26. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Aufbringen der Leiterstruktur die Schritte des Aufbringens einer negativ strukturierten Zwischenschicht und des Abscheidens von leitendem Material umfaßt. 26. The method according to any one of the preceding claims, characterized in that the application of the conductor structure comprises the steps of applying a negatively structured intermediate layer and depositing conductive material.
27. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß vor dem Schritt des Abscheidens einer strukturierten Glasschicht (9, 91, 92, 93, 13) zumindest eine leitende Struktur, insbesondere eine Leiterbahn auf das Substrat aufgebracht wird.27. The method according to any one of the preceding claims, characterized in that before the step of depositing a structured glass layer (9, 91, 92, 93, 13) at least one conductive structure, in particular a conductor track, is applied to the substrate.
28. Verfahren gemäß einem der vorstehenden Ansprüche, gekennzeichnet durch den Schritt des Abscheidens einer abschließenden Glasschicht (13) unter Verwendung eines28. The method according to any one of the preceding claims, characterized by the step of depositing a final glass layer (13) using a
Glasmaterials gemäß einem der Ansprüche 1 bis 17 und das Herstellen zumindest einer Durchkontaktierung (15) in der abschließenden Glasschicht (13).Glass material according to one of claims 1 to 17 and the production of at least one via (15) in the final glass layer (13).
29. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Substrat (1) ein Halbleitersubstrat mit aktiven Halbleiter-Bereichen (33) umfaßt, dadurch gekennzeichnet, daß die zumindest eine Leiterstruktur (100, 111, 112, 113) beim Aufbringen mit einer Anschlußstelle (35) des aktiven Halbleiter- Bereichs (33) in Verbindung gebracht wird.29. The method according to any one of the preceding claims, characterized in that the substrate (1) comprises a semiconductor substrate with active semiconductor regions (33), characterized in that the at least one conductor structure (100, 111, 112, 113) with the application a connection point (35) of the active semiconductor region (33) is connected.
30. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die zumindest eine Leiterstruktur (100, 111, 112, 113) beim Aufbringen mit einer Durchkontaktierung (37) durch das Substrat (1) verbunden wird.30. The method according to any one of the preceding claims, characterized in that the at least one conductor structure (100, 111, 112, 113) is connected to a via (37) through the substrate (1) during application.
31. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Substrat (1) während des Aufdampfens der Glasschicht (9, 91, 92, 93, 13) auf einer Temperatur zwischen 50 °C und 200 °C, bevorzugt zwischen 80 °C und 120 °C gehalten wird. 31. The method according to any one of the preceding claims, characterized in that the substrate (1) during the vapor deposition of the glass layer (9, 91, 92, 93, 13) at a temperature between 50 ° C and 200 ° C, preferably between 80 ° C and 120 ° C is maintained.
32. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die Glasschicht (9, 91, 92, 93) mit einer Abscheiderate von zumindest 0,1 μm Schichtdicke pro Minute aufgedampft wird.32. The method according to any one of the preceding claims, characterized in that the glass layer (9, 91, 92, 93) is evaporated at a deposition rate of at least 0.1 μm layer thickness per minute.
33. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß die zumindest eine Öffnung33. The method according to any one of the preceding claims, characterized in that the at least one opening
(8) in der Glasschicht (9, 91, 92, 93, 13) mit leitendem Material (19) aufgefüllt wird.(8) in the glass layer (9, 91, 92, 93, 13) is filled with conductive material (19).
34. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Substrat (1) im Waferverbund beschichtet wird.34. The method according to any one of the preceding claims, characterized in that the substrate (1) is coated in the wafer composite.
35. Verfahren gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Aufdampfen einer Glasschicht (9, 91, 92, 93, 13) durch Plasma-Ionen- unterstütztes Aufdampfen (PIAD) erfolgt.35. The method according to any one of the preceding claims, characterized in that the vapor deposition of a glass layer (9, 91, 92, 93, 13) is carried out by plasma ion-assisted vapor deposition (PIAD).
36. Bauelement (10) mit Hochfrequenz-Leiteranordnung (4, 41, 42), insbesondere hergestellt mit einem Verfahren gemäß einem der vorstehenden Ansprüche, welches -ein Substrat (1) mit zumindest einem Kontaktierungsbereich (71 - 74), -auf zumindest einer Seite (3, 5) des Substrats (1) eine Glasschicht (9, 91, 92, 93, 13), die zumindest eine Öffnung (8) mit einer Durchkontaktierung aufweist, wobei die Glasschicht durch Verdampfen eines Glasmaterials insbesondere gemäß einem der Ansprüche 1 bis 17 abgeschieden ist, und wobei die Durchkontaktierung in elektrischem Kontakt mit dem Kontaktierungsbereich (71 - 74) steht, und36. Component (10) with a high-frequency conductor arrangement (4, 41, 42), in particular produced using a method according to one of the preceding claims, which —a substrate (1) with at least one contacting region (71-74), on at least one Side (3, 5) of the substrate (1) is a glass layer (9, 91, 92, 93, 13) which has at least one opening (8) with a plated-through hole, the glass layer being evaporated by a glass material, in particular according to one of claims 1 to 17, and wherein the via is in electrical contact with the contacting region (71-74), and
-zumindest eine Leiterstruktur (100, 111, 112, 113) auf der Glasschicht (9, 91, 92, 93), welche mit der Durchkontaktierung in Kontakt ist, umfaßt .at least one conductor structure (100, 111, 112, 113) on the glass layer (9, 91, 92, 93), which is in contact with the plated-through hole, includes.
37. Bauelement gemäß Anspruch 36, gekennzeichnet durch zumindest ein passives elektrisches Bauelement (23) auf der Glasschicht (9, 91, 92, 93, 13), welches an die zumindest eine Leiterstruktur (100, 111, 112, 113) angeschlossen ist.37. Component according to claim 36, characterized by at least one passive electrical component (23) on the glass layer (9, 91, 92, 93, 13), which is connected to the at least one conductor structure (100, 111, 112, 113).
38. Bauelement gemäß einem der vorstehenden Ansprüche, gekennzeichnet durch eine mehrlagige Leiteranordnung (4, 41, 42) mit zumindest zwei aufgedampften Glasschichten (9, 91, 92 ,93) und jeweils darauf aufgebrachter Leiterstruktur (100, 111, 112, 113), wobei eine Leiterstruktur auf einer ersten Glasschicht mit einer Leiterstruktur auf einer zweiten Glasschicht über eine Durchkontaktierung (15) in elektrischem Kontakt sind.38. Component according to one of the preceding claims, characterized by a multilayer conductor arrangement (4, 41, 42) with at least two vapor-deposited glass layers (9, 91, 92, 93) and conductor structure (100, 111, 112, 113) applied thereon, wherein a conductor structure on a first glass layer is in electrical contact with a conductor structure on a second glass layer via a via (15).
39. Bauelement gemäß einem der vorstehenden Ansprüche, dadurch gekennzeichnet, daß das Substrat (1) ein Halbleitersubstrat mit zumindest einem aktiven39. Component according to one of the preceding claims, characterized in that the substrate (1) is a semiconductor substrate with at least one active
Halbleiter-Bereich (33) auf einer ersten Seite (3) des Substrats (1) umfaßt, welches an die Leiterstruktur angeschlossen ist. Semiconductor region (33) on a first side (3) of the substrate (1), which is connected to the conductor structure.
EP03755118A 2002-05-23 2003-05-23 Glass material for use at high frequencies Withdrawn EP1506578A2 (en)

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EP03755118A EP1506578A2 (en) 2002-05-23 2003-05-23 Glass material for use at high frequencies

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DE10222609 2002-05-23
DE10222609A DE10222609B4 (en) 2002-04-15 2002-05-23 Process for producing structured layers on substrates and methodically coated substrate
PCT/EP2003/003907 WO2003088347A2 (en) 2002-04-15 2003-04-15 Method for connecting substrates and composite element
WOPCT/EP03/03907 2003-04-15
EP03755118A EP1506578A2 (en) 2002-05-23 2003-05-23 Glass material for use at high frequencies
PCT/EP2003/005414 WO2003100846A2 (en) 2002-05-23 2003-05-23 Glass material for use at high frequencies

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EP1506578A2 true EP1506578A2 (en) 2005-02-16

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US (1) US8273671B2 (en)
EP (1) EP1506578A2 (en)
JP (3) JP5027992B2 (en)
CN (1) CN1656612A (en)
AU (1) AU2003247287A1 (en)
WO (1) WO2003100846A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2003237668A1 (en) 2002-05-23 2003-12-12 Schott Ag Method for producing a component comprising a conductor structure that is suitable for use at high frequencies and corresponding component
US8003513B2 (en) 2002-09-27 2011-08-23 Medtronic Minimed, Inc. Multilayer circuit devices and manufacturing methods using electroplated sacrificial structures
US20040061232A1 (en) * 2002-09-27 2004-04-01 Medtronic Minimed, Inc. Multilayer substrate
DE102007016659B8 (en) * 2007-04-04 2015-12-03 Tricumed Medizintechnik Gmbh Infusion pump, channel plate for an infusion pump and method of making the same
DE102008034372B4 (en) 2008-07-23 2013-04-18 Msg Lithoglas Ag Method for producing a dielectric layer in an electroacoustic component and electroacoustic component
DE102008044938B4 (en) 2008-08-29 2013-10-10 Schott Ag Method for terminating light-conducting fiber bundles and sleeve with a fiber bundle
DE102008037613A1 (en) * 2008-11-28 2010-06-02 Schott Solar Ag Method of making a metal contact
EP2662153A1 (en) * 2009-03-26 2013-11-13 Norwegian University of Science and Technology (NTNU) CMUT Array
DE102009002662B4 (en) 2009-04-27 2022-11-24 Ifm Electronic Gmbh Capacitive pressure sensor as a combination sensor for recording other measured variables
DE102009034532A1 (en) * 2009-07-23 2011-02-03 Msg Lithoglas Ag Process for producing a structured coating on a substrate, coated substrate and semifinished product with a coated substrate
JP2015518519A (en) * 2012-03-30 2015-07-02 エムエスゲー リトグラス ゲーエムベーハー Semiconductor device and method for producing a glassy layer
US9673131B2 (en) * 2013-04-09 2017-06-06 Intel Corporation Integrated circuit package assemblies including a glass solder mask layer
JP6447075B2 (en) * 2014-12-10 2019-01-09 凸版印刷株式会社 Wiring substrate, semiconductor device, and manufacturing method of semiconductor device
JP6832630B2 (en) * 2016-03-28 2021-02-24 富士通インターコネクトテクノロジーズ株式会社 Manufacturing method of wiring board
CN109715576A (en) * 2016-09-13 2019-05-03 Ａｇｃ株式会社 High-frequency element glass substrate and high-frequency element circuit substrate
RU2701611C1 (en) * 2017-11-07 2019-09-30 Ферро Корпорэйшн Dielectric composition with low k for applications at high frequencies
DE102018112069A1 (en) * 2018-05-18 2019-11-21 Schott Ag Use of a flat glass in electronic components
CN109206015B (en) * 2018-10-08 2022-03-11 浙江矽瓷科技有限公司 Low-temperature and low-voltage anodic bonding substrate material and preparation method thereof
US11503704B2 (en) * 2019-12-30 2022-11-15 General Electric Company Systems and methods for hybrid glass and organic packaging for radio frequency electronics
DE102020133756A1 (en) 2020-12-16 2022-06-23 Infineon Technologies Ag High frequency devices with damping dielectric materials

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639325A (en) * 1995-02-01 1997-06-17 The Whitaker Corporation Process for producing a glass-coated article
US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
US6329702B1 (en) * 2000-07-06 2001-12-11 Tyco Electronics Corporation High frequency carrier

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2965519A (en) * 1958-11-06 1960-12-20 Bell Telephone Labor Inc Method of making improved contacts to semiconductors
US3543394A (en) * 1967-05-24 1970-12-01 Sheldon L Matlow Method for depositing thin films in controlled patterns
US3417393A (en) * 1967-10-18 1968-12-17 Texas Instruments Inc Integrated circuit modular radar antenna
DE1934217C3 (en) 1969-07-05 1974-05-22 Leybold-Heraeus Gmbh & Co Kg, 5000 Koeln Glass for the production of thin layers by vapor deposition in a high vacuum
JPS5120699B2 (en) * 1971-08-27 1976-06-26
US4035276A (en) * 1976-04-29 1977-07-12 Ibm Corporation Making coplanar layers of thin films
JPS53106464A (en) * 1977-02-28 1978-09-16 Sharp Kk Multilayer circuit board
US4564997A (en) * 1981-04-21 1986-01-21 Nippon-Telegraph And Telephone Public Corporation Semiconductor device and manufacturing process thereof
US4492717A (en) 1981-07-27 1985-01-08 International Business Machines Corporation Method for forming a planarized integrated circuit
FR2525391B1 (en) * 1982-04-16 1985-09-13 Thomson Csf SUBSTRATE FOR ELECTRONIC CIRCUIT OPERATING IN THE MICROWAVE RANGE, AND METHOD FOR METALLIZING THE SUBSTRATE
US4439270A (en) * 1983-08-08 1984-03-27 International Business Machines Corporation Process for the controlled etching of tapered vias in borosilicate glass dielectrics
US4508815A (en) * 1983-11-03 1985-04-02 Mostek Corporation Recessed metallization
JPS613431A (en) 1984-06-15 1986-01-09 Nec Corp Semiconductor device with multilayer interconnection and manufacture thereof
JPS61151038A (en) 1984-12-24 1986-07-09 Toshiba Glass Co Ltd Target glass for coating of semiconductor
US4819039A (en) * 1986-12-22 1989-04-04 American Telephone And Telegraph Co. At&T Laboratories Devices and device fabrication with borosilicate glass
JPH0238775A (en) 1988-07-27 1990-02-08 Hitachi Metals Ltd Piezoelectric body driving circuit
US5024975A (en) * 1989-10-19 1991-06-18 E. I. Du Pont De Nemours And Co., Inc. Crystallizable, low dielectric constant, low dielectric loss composition
JPH0636472B2 (en) * 1990-05-28 1994-05-11 インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン Method for manufacturing multilayer wiring board
JPH04320356A (en) * 1991-04-19 1992-11-11 Fujitsu Ltd Manufacture of thin film circuit board
US5264399A (en) * 1992-04-28 1993-11-23 International Business Machines Corporation Ceramic composite body
JPH0637251A (en) 1992-07-14 1994-02-10 Rohm Co Ltd Semiconductor device
JPH0669653A (en) * 1992-08-20 1994-03-11 Fujitsu Ltd Multilayered circuit board and its manufacture
JPH06112710A (en) 1992-09-25 1994-04-22 Sumitomo Metal Ind Ltd High frequency circuit substrate
DE4236264C1 (en) 1992-10-27 1993-09-02 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung Ev, 80636 Muenchen, De
JP3381332B2 (en) 1993-08-24 2003-02-24 日本電気硝子株式会社 High dielectric constant glass ceramic
US5597767A (en) * 1995-01-06 1997-01-28 Texas Instruments Incorporated Separation of wafer into die with wafer-level processing
DE69623930T2 (en) * 1995-01-27 2003-05-15 Sarnoff Corp., Princeton LOW DIELECTRIC LOSS GLASSES
JP3236882B2 (en) * 1995-02-13 2001-12-10 三菱マテリアル株式会社 Aluminum nitride substrate and method of manufacturing the same
JPH09142876A (en) * 1995-09-22 1997-06-03 Murata Mfg Co Ltd Glass composition having low dielectric constant for high frequency
DE19638380B4 (en) * 1995-09-22 2004-11-04 Murata Manufacturing Co., Ltd., Nagaokakyo Use of a glass mass with a low dielectric constant for high-frequency circuits
US5822856A (en) * 1996-06-28 1998-10-20 International Business Machines Corporation Manufacturing circuit board assemblies having filled vias
TW424321B (en) * 1996-10-31 2001-03-01 Sharp Kk Integrated electronic circuit
JP3935558B2 (en) 1997-06-04 2007-06-27 大日本印刷株式会社 Pattern formation method
EP0915513A1 (en) * 1997-10-23 1999-05-12 STMicroelectronics S.r.l. High quality factor, integrated inductor and production method thereof
JP3827846B2 (en) 1997-12-11 2006-09-27 大日本印刷株式会社 Wiring board manufacturing method and wiring board
US6620731B1 (en) * 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
DE19846691C1 (en) 1998-10-09 1999-11-25 Daimler Chrysler Ag Microstructured glass used in the production of sensors
KR100318684B1 (en) * 1999-12-18 2001-12-28 윤종용 Method of manufacturing capacitor in semiconductor device
JP3680684B2 (en) * 2000-03-06 2005-08-10 株式会社村田製作所 Insulator porcelain, ceramic multilayer substrate, ceramic electronic component and multilayer ceramic electronic component
US6262464B1 (en) 2000-06-19 2001-07-17 International Business Machines Corporation Encapsulated MEMS brand-pass filter for integrated circuits
JP3457266B2 (en) * 2000-06-21 2003-10-14 日本電信電話株式会社 Element mounting board and method of manufacturing element mounting board
DE10042653A1 (en) 2000-08-31 2002-03-28 Bosch Gmbh Robert Ceramic multiple layer circuit element for linking adjacent electrically conductive elements has stacked ceramic layers with different relative permittivities and green ceramic foil with lowered crystallizing temperature.
US6444517B1 (en) * 2002-01-23 2002-09-03 Taiwan Semiconductor Manufacturing Company High Q inductor with Cu damascene via/trench etching simultaneous module

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5639325A (en) * 1995-02-01 1997-06-17 The Whitaker Corporation Process for producing a glass-coated article
US5696466A (en) * 1995-12-08 1997-12-09 The Whitaker Corporation Heterolithic microwave integrated impedance matching circuitry and method of manufacture
US6329702B1 (en) * 2000-07-06 2001-12-11 Tyco Electronics Corporation High frequency carrier

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03100846A2 *

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AU2003247287A1 (en) 2003-12-12
WO2003100846A3 (en) 2004-03-18
JP2005535108A (en) 2005-11-17
JP2010153927A (en) 2010-07-08
JP5027992B2 (en) 2012-09-19
WO2003100846A2 (en) 2003-12-04
AU2003247287A8 (en) 2003-12-12
JP2006513558A (en) 2006-04-20
US20070166520A1 (en) 2007-07-19
US8273671B2 (en) 2012-09-25
CN1656612A (en) 2005-08-17

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