EP1349232A2 - Microwave resonator - Google Patents

Microwave resonator Download PDF

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Publication number
EP1349232A2
EP1349232A2 EP03006616A EP03006616A EP1349232A2 EP 1349232 A2 EP1349232 A2 EP 1349232A2 EP 03006616 A EP03006616 A EP 03006616A EP 03006616 A EP03006616 A EP 03006616A EP 1349232 A2 EP1349232 A2 EP 1349232A2
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EP
European Patent Office
Prior art keywords
substrate
layer
microwave resonator
resonator according
resonator
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Granted
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EP03006616A
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German (de)
French (fr)
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EP1349232A3 (en
EP1349232B1 (en
Inventor
Rolf Crelpke
Klaus Schieber
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Tesat Spacecom GmbH and Co KG
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Tesat Spacecom GmbH and Co KG
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P7/00—Resonators of the waveguide type
    • H01P7/06—Cavity resonators
    • H01P7/065—Cavity resonators integrated in a substrate

Definitions

  • the invention is based on a microwave resonator after the Genus of the main claim.
  • resonators In the manufacture of high-quality RF oscillators, that is, with low phase noise, resonators are required also have a high quality. Such resonators must due to low resistive conduction losses, due to low dielectric Losses and be characterized by low radiation losses.
  • the disadvantage is that these resonators are relatively large, and that in this case a resonator chamber is required in which propagates the electric field.
  • the resonator represents an additional component.
  • a post-processing grinding may be required.
  • FIGS. 1 and 2 An example of such a resonator is shown in FIGS. 1 and 2 shown. It consists of a strip-shaped substrate 12, the is covered on both sides with a conductive layer 3, and close to the right end has holes 2. The inner surfaces of the Holes 2 are also covered with the layer 3, so that the Layer 3 of the top 4 and the layer 3 of the bottom 5 electrically connected to each other.
  • the ohmic resistance of the layer 3 am on the holes. 2 short-circuited, relatively narrow end of the large ohmic Line losses and the fairly large geometric ones Dimensions of the signal input 13 serving left open
  • the large radiation losses of the known stripline resonator Since the quality of the resonator depends on the size the line losses and the radiation losses, this results in the relatively low quality of the known resonator.
  • the microwave resonator according to the invention with the has characteristic features of the main claim In contrast, the advantage of reduced ohmic line losses and reduced radiation losses, so that it is a very high quality and is well suited to high quality RF oscillators to be installed.
  • the conductive layer, or the arrangement of the holes, the shape of a Circular disk on, the top and the bottom with the Layer are occupied, the holes are at the edge of the disc arranged, and is mounted in the middle of the top Layer an opening arranged as a signal input.
  • the Gap between coupling tongue and circular disc circular segment educated is the Gap between coupling tongue and circular disc circular segment educated.
  • microwave resonator more than a coupling tongue on. This allows the coupling of one of the number of coupling tongues corresponding number of lines and components.
  • the substrate consists of low-loss dielectric material, which material in ceramic form outstanding Has insulating properties.
  • the substrate consists of alumina, sapphire, quartz glass, Teflon or similar.
  • This material has a high electrical Conductivity on and is very resistant to corrosion, so it can be used for particularly suitable for the present purpose.
  • the layer consists of highly conductive metal, so it is suitable for the this purpose is particularly well suited.
  • the layer consists of gold, silver, copper, aluminum, superconductor or similar.
  • This material has a high electrical Conductivity on and is very resistant to corrosion, so it can be used for particularly suitable for the present purpose.
  • the circular resonator 1 consists of a disk of aluminum oxide (Al 2 O 3 ), ie, of a well electrically insulating substrate 12, which disc has at its edge through holes 2 and, as in particular.
  • Figure 4 shows, coated on both sides with a layer 3 is made of a highly conductive and non-corrosive material, which is particularly well suited to gold.
  • the inner surfaces of the bores 2 are also covered with the conductive layer 3, so that the layers 3 located on the upper side 4 and the lower side 5 are thereby short-circuited.
  • the layer 3 of the top 4 has a round opening 6, which is used as a signal input 13.
  • the circular resonator 1 shown in FIGS. 3 and 4 can be up to operate at a frequency of 20 GHz.
  • This particular has the Advantage that also one with the circular resonator 1 according to the invention equipped oscillator a high quality, that is, a low Has phase noise.
  • the coupling of the electrical oscillator components via the signal input 13 in that this in the middle of the top 4 through the opening. 6 and through-contacted by the alumina substrate.
  • FIG. 5 shows an embodiment of a circular resonator 7, instead of a central opening 6 on one side a Coupling tongue 8 as a signal input 13 having the length L has.
  • Their purpose is to oscillator components with the Circular resonator 7 electrically connect.
  • the circular resonator 7 also consists of an aluminum oxide disc, the two sides with Gold is coated. Both sides of the gold layer have the in FIG 5 illustrated form.
  • Q Quality of Q
  • FIG Circular resonator 10 whose structure except for the circular segment-shaped Gap 11 is identical to that of the circular resonator 7 according to FIG Figure 5.
  • the sides of the gap 11 close an angle of a size such that the circular resonator 10 a Tuning bandwidth of up to 15%.
  • a varactor diode For tuning, a varactor diode by means of another Line to be coupled.
  • This diode can be both outside as also be arranged within the structure of the Kreisresonators.

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  • Control Of Motors That Do Not Use Commutators (AREA)
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Abstract

Near an end face or edge, the conductive layer (3) includes penetrating bores (2). It covers both sides. It also covers inner surfaces of the bores, electrically-connecting the layers on both sides. The signal input (13) region of the substrate (12) borders an insulated region lying opposite another part of the layer (3).

Description

Stand der Technik:State of the art:

Die Erfindung geht aus von einem Mikrowellenresonator nach der Gattung des Hauptanspruches.The invention is based on a microwave resonator after the Genus of the main claim.

Bei der Herstellung von HF-Oszillatoren hoher Güte, d.h., mit geringem Phasenrauschen, sind Resonatoren erforderlich, die ebenfalls eine hohe Güte aufweisen. Derartige Resonatoren müssen durch niedrige ohmsche Leitungsverluste, durch geringe dielektrische Verluste und durch niedrige Abstrahlverluste gekennzeichnet sein.In the manufacture of high-quality RF oscillators, that is, with low phase noise, resonators are required also have a high quality. Such resonators must due to low resistive conduction losses, due to low dielectric Losses and be characterized by low radiation losses.

Aus dem Stand der Technik sind vielfache Versuche bekannt, diese Bedingungen zu erfüllen. So wird in der Literaturquelle, D. K. Paul und P. Gardner, "Microwave Oscillator and Filters based on Microstrip Ring Resonator", IEEE MTT-S 1995, ein Ringresonator hoher Güte beschrieben, der jedoch die Nachteile aufweist, dass die Ankopplung problematisch ist, und dass Störmoden auftreten, die unterdrückt werden müssen, wenn ein größerer Abstimmbereich benötigt wird. Durch derartige Maßnahmen nimmt die Güte des Resonators wieder ab.Numerous attempts are known from the prior art, these To meet conditions. Thus, in the literature source, D.K. Paul and P. Gardner, "Microwave Oscillator and Filters based on Microstrip Ring Resonator ", IEEE MTT-S 1995, a ring resonator described high quality, but has the disadvantages that the Coupling is problematic, and that spurious modes occur, the must be suppressed if a larger tuning range is needed. By such measures the quality of the Resonator again.

Bekannt ist auch ein aus einem Keramiksubstrat bestehender planarer Resonator, das beidseitig metallisiert ist und in beiden Metallisierungsflächen kreisrunde Aussparungen aufweist. Dieser Resonator weist eine hohe Güte auf, hat aber den Nachteil, dass für dessen Montage beidseitig des Substrates ein größeres Luftvolumen vorliegen muss. Dies erfordert größere Kammern für den Resonator, was sich dann als nachteilig erweist, wenn der Resonator in "MIC"-Technik realisiert werden soll.Also known is an existing from a ceramic substrate planar resonator metallized on both sides and in both Metallisierungsflächen circular recesses has. This Resonator has a high quality, but has the disadvantage that for its mounting on both sides of the substrate a larger volume of air must be present. This requires larger cavities for the resonator, which proves to be disadvantageous when the resonator in "MIC" technique to be realized.

Aus der Literaturquelle, Elektronik Industrie 4-1190: Dr. Gundolf Kuchler: Koaxiale Keramikresonatoren für 400 MHz bis 4,5 GHz, und aus der Quelle, UKW-Bericht 2/1989: Dr. J. Jirmann: Koaxiale Keramikresonatoren, interessante Bauelemente für den Frequenzbereich zwischen 1 und 2,4 GHz, sind koaxiale Keramikresonatoren bekannt, die je nach Frequenzbereich und Keramikmaterial eine Güte zwischen Q= 400 bis Q=800 aufweisen. Deren Nachteile bestehen darin, dass hierbei extra Bauelemente erforderlich sind, und dass der Übergang zwischen IC und Resonator kritisch ist.From the Literature Source, Electronics Industry 4-1190: Dr. med. Gundolf Kuchler: Coaxial ceramic resonators for 400 MHz to 4.5 GHz, and from the source, VHF report 2/1989: J. Jirmann: Coaxial Ceramic resonators, interesting components for the Frequency range between 1 and 2.4 GHz, are coaxial Ceramic resonators are known, depending on the frequency range and Ceramic material have a quality between Q = 400 to Q = 800. Their disadvantages are that in this case extra components are required, and that the transition between IC and resonator is critical.

Bekannt sind zudem aus der Literaturquelle, Artech House: Kajfez/Guillon: Dielectric Resonators, dielektrische Resonatoren, die je nach Frequenzbereich und Resonatormaterial bei Raumtemperatur und im Grundmode TE01δ eine Güte zwischen Q=1000 und Q= 10000 aufweisen. Nachteilig ist, dass diese Resonatoren relativ groß sind, und dass hierbei eine Resonatorkammer erforderlich ist, in der sich das elektrische Feld ausbreitet. Zudem stellt der Resonator ein zusätzliches Bauteil dar. Und im Rahmen der Verwendung dieses Resonators ist eventuell eine Nachbearbeitung (Abschleifen) erforderlich. Als weitere Nachteile weist er eine überdurchschnittliche Gehäuse- und Deckelempfindlichkeit (Mikrophonie) auf, ist die elektrische Abstimmbandbreite aufgrund der hohen Güte sehr gering, d.h., nur ca. 10 MHz, und ist die Montage und der Abgleich eines mit diesem Resonator aufgestatteten Oszillators sehr kompliziert.Also known from the literature source, Artech House: Kajfez / Guillon: Dielectric resonators, dielectric resonators having a quality between Q = 1000 and Q = 10000 depending on the frequency range and resonator material at room temperature and in the fundamental mode TE 01δ . The disadvantage is that these resonators are relatively large, and that in this case a resonator chamber is required in which propagates the electric field. In addition, the resonator represents an additional component. And in the context of the use of this resonator, a post-processing (grinding) may be required. As further disadvantages, it has an above-average case and lid sensitivity (microphony), the electrical tuning bandwidth is very low due to the high quality, ie, only about 10 MHz, and the installation and adjustment of a this oscillator aufgestatteten oscillator is very complicated ,

Letztlich sind aus den Literaturquellen E. Belohoubek, E. Denlinger, "Loss Considerations for Microstrip Resonators", IEEE MTT, Juni 1975, und A. Gopinath, "Maximum Q-Factor of Microstrip Resonators, IEEE MTT Feb. 1981, MIC-Streifenleitungs-Resonatoren bekannt, bei denen für jede Frequenz und für jedes Substratmaterial eine optimale Konfiguration, d.h., Leiterbreite und Substratdicke, realisierbar ist. Der Nachteil dieser bekannten Resonatoren besteht in der relativ niedrigen Güte von nur Q=50 bis Q=200.Ultimately, the literature sources E. Belohoubek, E. Denlinger, "Loss Considerations for Micro Strips Resonators", IEEE MTT, June 1975, and A. Gopinath, "Maximum Q-Factor of Microstrip Resonators, IEEE MTT Feb. 1981, MIC stripline resonators known in which for each frequency and for each substrate material optimal configuration, i.e., conductor width and substrate thickness, is feasible. The disadvantage of these known resonators is in the relatively low quality of only Q = 50 to Q = 200.

Ein Beispiel eines solchen Resonators ist in den Figuren 1 und 2 dargestellt. Er besteht aus einem streifenförmigen Substrat 12, das beidseitig mit einer leitfähigen Schicht 3 belegt ist, und das nahe der rechten Stirnseite Bohrungen 2 aufweist. Die Innenflächen der Bohrungen 2 sind ebenfalls mit der Schicht 3 belegt, sodass die Schicht 3 der Oberseite 4 und die Schicht 3 der Unterseite 5 elektrisch miteinander verbunden sind. Hierbei bestimmen der ohmsche Widerstand der Schicht 3 am über die Bohrungen 2 kurzgeschlossenen, relativ schmalen Ende die großen ohmschen Leitungsverluste und die ziemlich großen geometrischen Abmessungen des als Signaleingang 13 dienenden linken offenen Endes die großen Abstrahlverluste des bekannten Streifenleitungs-Resonators. Da die Güte des Resonators abhängig ist von der Größe der Leitungsverluste und der Abstrahlverluste, ergibt sich hieraus die relativ niedrige Güte des bekannten Resonators.An example of such a resonator is shown in FIGS. 1 and 2 shown. It consists of a strip-shaped substrate 12, the is covered on both sides with a conductive layer 3, and close to the right end has holes 2. The inner surfaces of the Holes 2 are also covered with the layer 3, so that the Layer 3 of the top 4 and the layer 3 of the bottom 5 electrically connected to each other. Here determine the ohmic resistance of the layer 3 am on the holes. 2 short-circuited, relatively narrow end of the large ohmic Line losses and the fairly large geometric ones Dimensions of the signal input 13 serving left open Finally, the large radiation losses of the known stripline resonator. Since the quality of the resonator depends on the size the line losses and the radiation losses, this results in the relatively low quality of the known resonator.

Die Erfindung und ihre Vorteile:The invention and its advantages:

Der erfindungsgemäße Mikrowellenresonator mit den kennzeichnenden Merkmalen des Hauptanspruches hat demgegenüber den Vorteil verringerter ohmscher Leitungsverluste und verringerter Abstrahlverluste, sodass er eine sehr hohe Güte aufweist und gut dazu geeignet ist, in HF-Oszillatoren mit hoher Güte eingebaut zu werden.The microwave resonator according to the invention with the has characteristic features of the main claim In contrast, the advantage of reduced ohmic line losses and reduced radiation losses, so that it is a very high quality and is well suited to high quality RF oscillators to be installed.

Nach einer vorteilhaften Ausgestaltung der Erfindung weist die leitfähige Schicht, bzw. die Anordnung der Löcher, die Form einer Kreisscheibe auf, deren Oberseite und deren Unterseite mit der Schicht belegt sind, sind die Bohrungen am Rand der Kreisscheibe angeordnet, und ist in der Mitte der auf der Oberseite angebrachten Schicht eine Öffnung als Signaleingang angeordnet. Die hierdurch minimierten Abmessungen des offenen Endes reduzieren die Abstrahlverluste des Mikrowellenresonators, und dessen sehr weit aufgespreiztes kurzgeschlossenes Ende verringern dessen ohmsche Leitungsverluste erheblich, sodass hierdurch die Güte des erfindungsgemäßen Resonators sehr erhöht wird.According to an advantageous embodiment of the invention, the conductive layer, or the arrangement of the holes, the shape of a Circular disk on, the top and the bottom with the Layer are occupied, the holes are at the edge of the disc arranged, and is mounted in the middle of the top Layer an opening arranged as a signal input. The result Minimized dimensions of the open end reduce the Radiation losses of the microwave resonator, and its very far Spread short-circuited end reduce its resistive Line losses considerably, so that the quality of the resonator according to the invention is greatly increased.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung weist die Kreisscheibe als Signaleingang eine von derem zentralen Bereich radial nach außen gerichtete Ankopplungszunge mit der Länge L auf, die seitlich über einen Spalt mit der Breite S von der Kreisscheibe beabstandet ist. Hierdurch ergibt sich die Möglichkeit, über die Spaltbreite S die Abstimmbandbreite und über die Länge L die Kopplung des Mikrowellenresonators einzustellen.According to a further advantageous embodiment of the invention has the circular disk as signal input one of its central area radially outwardly directed coupling tongue of length L, the side over a gap with the width S of the circular disc is spaced. This results in the possibility over the Gap width S the tuning bandwidth and over the length L the Set coupling of the microwave resonator.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung ist der Spalt zwischen Ankoppelzunge und Kreisscheibe kreissegmentförmig ausgebildet. Durch diese weitgehende Vergrößerung der Spaltbreite ergibt sich eine besonders breitbandige Version des Mikrowellenresonators gemäß der Erfindung.According to a further advantageous embodiment of the invention is the Gap between coupling tongue and circular disc circular segment educated. Through this extensive enlargement of the gap width results in a particularly broadband version of the Microwave resonator according to the invention.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung weist der Mikrowellenresonator mehr als eine Ankoppelzunge auf. Dies ermöglicht die Ankopplung einer der Anzahl der Ankoppelzungen entsprechender Anzahl von Leitungen und Bauelementen.According to a further advantageous embodiment of the invention has the microwave resonator more than a coupling tongue on. This allows the coupling of one of the number of coupling tongues corresponding number of lines and components.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung besteht das Substrat aus verlustarmen dielektrischen Material, welches Material in Keramikform hervorragende Isolationseigenschaften aufweist.According to a further advantageous embodiment of the invention if the substrate consists of low-loss dielectric material, which material in ceramic form outstanding Has insulating properties.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung besteht das Substrat aus Aluminiumoxid, Saphir, Quarzglas, Teflon oder dergleichen. Dieses Material weist eine hohe elektrische Leitfähigkeit auf und ist sehr korrosionsbeständig, sodass es sich für den vorliegenden Zweck besonders gut eignet.According to a further advantageous embodiment of the invention The substrate consists of alumina, sapphire, quartz glass, Teflon or similar. This material has a high electrical Conductivity on and is very resistant to corrosion, so it can be used for particularly suitable for the present purpose.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung besteht die Schicht aus hochleitfähigen Metall, sodass es sich für den vorliegenden Zweck besonders gut eignet. According to a further advantageous embodiment of the invention The layer consists of highly conductive metal, so it is suitable for the this purpose is particularly well suited.

Nach einer weiteren vorteilhaften Ausgestaltung der Erfindung besteht die Schicht aus Gold, Silber, Kupfer, Aluminium, Supraleiter oder dergleichen. Dieses Material weist eine hohe elektrische Leitfähigkeit auf und ist sehr korrosionsbeständig, sodass es sich für den vorliegenden Zweck besonders gut eignet.According to a further advantageous embodiment of the invention the layer consists of gold, silver, copper, aluminum, superconductor or similar. This material has a high electrical Conductivity on and is very resistant to corrosion, so it can be used for particularly suitable for the present purpose.

Weitere Vorteile und vorteilhafte Ausgestaltungen der Erfindung sind der nachfolgenden Beschreibung, den Zeichnungen und den Ansprüchen entnehmbar.Further advantages and advantageous embodiments of the invention are the following description, the drawings and the Claims removable.

Zeichnungen:Drawings:

Einige Ausführungsbeispiele der Erfindung sind in den Figuren 3 bis 6 dargestellt und werden im Folgenden näher beschrieben. Es zeigen

Fig. 3
einen Kreisresonator in Draufsicht,
Fig. 4
den Kreisresonator gemäß Fig. 3 im Schnitt entlang der Linie IV-IV,
Fig. 5
einen Kreisresonator in Draufsicht mit einer separaten Ankopplungszunge und
Fig. 6
einen Kreisresonator in Draufsicht mit einer separaten Ankopplungszunge und einem Spalt zwischen Ankopplungszunge und Kreisresonator in Form eines Kreissegmentes.
Some embodiments of the invention are illustrated in FIGS. 3 to 6 and will be described in more detail below. Show it
Fig. 3
a circular resonator in plan view,
Fig. 4
the circular resonator of FIG. 3 in section along the line IV-IV,
Fig. 5
a circular resonator in plan view with a separate coupling tongue and
Fig. 6
a circular resonator in plan view with a separate coupling tongue and a gap between the coupling tongue and circular resonator in the form of a circle segment.

Beschreibung der Ausführungsbeispiele:Description of the embodiments:

Figur 3 zeigt einen als Kreisresonator 1 ausgebildeten Mikrowellenresonator, der in Draufsicht die Form einer Kreisscheibe aufweist. Der Radius der Kreisscheibe beträgt ¼ der Länge der im Kreisresonator 1 in Resonanz befindlichen elektromagnetischen Welle. Figur 4 stellt einen nicht maßstabsgerechten Schnitt durch den Kreisresonator 1 entlang der Linie IV-IV in Figur 3 dar.FIG. 3 shows a circuit resonator 1 Microwave resonator, which in plan view the shape of a circular disk having. The radius of the circular disk is ¼ of the length of the Circular resonator 1 in resonance electromagnetic Wave. FIG. 4 shows a section which is not to scale the circular resonator 1 along the line IV-IV in Figure 3 represents.

Der Kreisresonator 1 besteht aus einer Scheibe aus Aluminiumoxid (Al2O3), d.h., aus einem elektrisch gut isolierenden Substrat 12, welche Scheibe an ihrem Rand durchgehende Bohrungen 2 aufweist und, wie insb. Figur 4 zeigt, beidseitig mit einer Schicht 3 belegt ist, die aus einem hochleitfähigen und nicht korrodierenden Material besteht, wozu sich besonders gut Gold eignet. Auch die Innenflächen der Bohrungen 2 sind mit der leitfähigen Schicht 3 belegt, sodass hierdurch die auf der Oberseite 4 und der Unterseite 5 sich befindlichen Schichten 3 kurzgeschlossen werden. In der Mitte weist die Schicht 3 der Oberseite 4 eine runde Öffnung 6 auf, die als Signaleingang 13 verwendet wird.The circular resonator 1 consists of a disk of aluminum oxide (Al 2 O 3 ), ie, of a well electrically insulating substrate 12, which disc has at its edge through holes 2 and, as in particular. Figure 4 shows, coated on both sides with a layer 3 is made of a highly conductive and non-corrosive material, which is particularly well suited to gold. The inner surfaces of the bores 2 are also covered with the conductive layer 3, so that the layers 3 located on the upper side 4 and the lower side 5 are thereby short-circuited. In the middle, the layer 3 of the top 4 has a round opening 6, which is used as a signal input 13.

Der in den Figuren 3 und 4 dargestellte Kreisresonator 1 kann bis zu einer Frequenz von 20 GHz betrieben werden. Die erfindungsgemäße Form des Kreisresonator 1 bewirkt, dass dessen ohmsche Leitungsverluste und dessen Abstrahlverluste sehr gering sind, sodass er eine Güte von Q= 700 aufweist. Dies hat insbesondere den Vorteil, dass auch ein mit dem Kreisresonator 1 gemäß der Erfindung ausgestatteter Oszillator eine hohe Güte, d.h., ein geringes Phasenrauschen aufweist. Hierbei erfolgt die Ankopplung der elektrischen Oszillatorbauelemente über den Signaleingang 13 dadurch, dass diese in der Mitte der Oberseite 4 durch die Öffnung 6 und durch das Aluminiumoxid-Substrat durchkontaktiert werden.The circular resonator 1 shown in FIGS. 3 and 4 can be up to operate at a frequency of 20 GHz. The inventive Form of the circular resonator 1 causes its ohmic Line losses and its radiation losses are very low, so that it has a quality of Q = 700. This particular has the Advantage that also one with the circular resonator 1 according to the invention equipped oscillator a high quality, that is, a low Has phase noise. Here, the coupling of the electrical oscillator components via the signal input 13 in that this in the middle of the top 4 through the opening. 6 and through-contacted by the alumina substrate.

In Figur 5 ist eine Ausgestaltung eines Kreisresonators 7 dargestellt, die anstelle einer zentralen Öffnung 6 auf einer Seite eine Ankopplungszunge 8 als Signaleingang 13 mit der Länge L aufweist. Deren Zweck besteht darin, Oszillatorbauelemente mit dem Kreisresonator 7 elektrisch zu verbinden. Der Kreisresonator 7 besteht ebenfalls aus einer Aluminiumoxidscheibe, die beidseitig mit Gold beschichtet ist. Beide Seiten der Goldschicht weisen die in Figur 5 dargestellt Form auf. Auch diese Ausgestaltung eines Kreisresonators hat eine Güte von Q=700. Hierbei besteht nun die Möglichkeit, die Kopplung des Resonators 7 durch eine Variation der Länge L der Ankopplungszunge einzustellen. Wird beidseitig der Ankopplungszunge 8 zwischen dieser und dem Kreisresonator 7 ein Spalt 9 von der Breite S gelassen, besteht die Möglichkeit, die Abstimmbandbreite des Kreisresonators 7 über die Spaltbreite S einzustellen.FIG. 5 shows an embodiment of a circular resonator 7, instead of a central opening 6 on one side a Coupling tongue 8 as a signal input 13 having the length L has. Their purpose is to oscillator components with the Circular resonator 7 electrically connect. The circular resonator 7 also consists of an aluminum oxide disc, the two sides with Gold is coated. Both sides of the gold layer have the in FIG 5 illustrated form. This embodiment of a Circular resonator has a quality of Q = 700. Here is the now Possibility of coupling the resonator 7 by a variation of Set length L of the coupling tongue. Will both sides of Coupling tongue 8 between this and the circular resonator 7 a Slit 9 left of the width S, there is the possibility of the Tuning bandwidth of the circular resonator 7 over the gap width S adjust.

Hieraus folgt eine weitere in Figur 6 dargestellt Ausgestaltung eines Kreisresonators 10, dessen Aufbau bis auf den kreissegmentförmigen Spalt 11 identisch ist mit demjenigen des Kreisresonators 7 gemäß Figur 5. Hierbei schließen die Seiten des Spaltes 11 einen Winkel von einer derartigen Größe ein, dass der Kreisresonator 10 eine Abstimmbandbreite von bis zu 15% aufweist.From this follows a further embodiment shown in FIG Circular resonator 10, whose structure except for the circular segment-shaped Gap 11 is identical to that of the circular resonator 7 according to FIG Figure 5. Here, the sides of the gap 11 close an angle of a size such that the circular resonator 10 a Tuning bandwidth of up to 15%.

Bei jeder der erfindungsgemäßen Ausgestaltungen eines Kreisresonators 1, 7, 10 besteht nun die Möglichkeit, Oszillatorbauelemente kapazitiv, d.h., über einen Kondensator oder über eine durch einen Koppelschlitz getrennte Leitung auf der Oberseite oder der Unterseite des Aluminiumoxid-Substrates anzukoppeln.In each of the embodiments of the invention Circular resonator 1, 7, 10 is now possible Oscillator components capacitively, that is, via a capacitor or via a line separated by a coupling slot on the Top or bottom of the alumina substrate to dock.

Zur Abstimmung kann eine Varaktordiode mittels einer weiteren Leitung angekoppelt werden. Diese Diode kann sowohl außerhalb als auch innerhalb der Struktur des Kreisresonators angeordnet sein.For tuning, a varactor diode by means of another Line to be coupled. This diode can be both outside as also be arranged within the structure of the Kreisresonators.

Hierbei hat die vorliegende Erfindung insb. Den Vorteil, in "MIC"-Technik realisierbar zu sein, wobei die Breite S des Spaltes 9 bzw. der Öffnungswinkel des kreissegmentförmigen Spaltes 11 beliebig variiert werden können. Der Kreisresonator 7 bzw. 10 kann zur Ankopplung mehrerer Leitungen auch mit mehr als einer Ankopplungszunge 8 versehen sein, wobei dann die Breite S des Spaltes 9 bzw. die Größe des Öffnungswinkels des kreissegmentförmigen Spaltes 11 von der Anzahl der Ankopplungszungen 8 und von der gewünschten Abstimmbandbreite des erfindungsgemäßen Kreisresonators 7 bzw. 10 abhängt.Here, the present invention esp. The advantage in "MIC" technology be realizable, wherein the width S of the gap 9 and der Opening angle of the circular segment-shaped gap 11 varies as desired can be. The circular resonator 7 or 10 can be used for coupling multiple lines with more than one coupling tongue. 8 Be provided, in which case the width S of the gap 9 or the size the opening angle of the circular segment-shaped gap 11 of the Number of coupling tongues 8 and of the desired Tuning bandwidth of the circular resonator 7 or 10 depends.

Als weiterer Vorteil ist zu nennen, dass der erfindungsgemäße Kreisresonator sehr unempfindlich ist gegenüber solchen Einflüssen der Umgebung, die den Effekt der Mikrophonie auslösen. Dies wird dadurch bewirkt, dass die elektromagnetischen Felder fast vollständig zwischen der Oberseite 4 und der Unterseite 5 der hochleitfähigen Schicht 3 einschließbar sind, und dass die auf der Oberseite 4 und auf der Unterseite 5 befindlichen Schichten 3 über die Bohrungen 2 elektrisch miteinander verbunden sind. Another advantage is that the inventive Circular resonator is very insensitive to such influences environment that trigger the effect of microphones. this will This causes the electromagnetic fields almost completely between the top 4 and the bottom 5 of highly conductive layer 3 are lockable, and that on the Top 4 and located on the bottom 5 layers 3 over the holes 2 are electrically connected together.

Alle in der Beschreibung, in den nachfolgenden Ansprüchen und in den Zeichnungen dargestellten Merkmale sind sowohl einzeln als auch in beliebiger Kombination miteinander erfindungswesentlich. All in the description, in the following claims and in The features illustrated in the drawings are both individually as also essential to the invention in any combination with one another.

BezugszahlenlisteLIST OF REFERENCE NUMBERS

11
KreisresonatorKreisresonator
22
Bohrungdrilling
33
leitfähige Schichtconductive layer
44
Oberseitetop
55
Unterseitebottom
66
Öffnungopening
77
KreisresonatorKreisresonator
88th
Ankopplungszungecoupling tongue
99
Spaltgap
1010
KreisresonatorKreisresonator
1111
Spaltgap
1212
Substratsubstratum
1313
Signaleingangsignal input

Claims (9)

Mikrowellenresonator, bestehend aus einem plattenförmig ausgebildeten und elektrisch isolierenden Substrat (12), dass nahe einer Stirnseite der leitfähigen Schicht (3), Bohrungen (2) aufweist, dass beidseitig mit einer elektrisch leitfähigen Schicht (3) belegt ist, wobei die Schicht (3) die Innenflächen der Bohrungen (2) bedeckt und damit die auf den beiden Seiten des Substrates (12) aufgetragenen Schichten (3) elektrisch miteinander verbindet, und wobei derjenige Bereich des Substrates (12) als Signaleingang (13) verwendbar ist, an dem der Randbereiche eines Teiles der Schicht (3) vom Substrat (12) isoliert einem anderen Teil der Schicht (3) gegenüberliegt, dadurch gekennzeichnet, dass der als Signaleingang (13) dienende Bereich des Substrates (12) geringere Abmessungen aufweist, als die mit den Bohrungen (2) versehene Stirnseite des Substrates (12).Microwave resonator, consisting of a plate-shaped and electrically insulating substrate (12), in that near an end face of the conductive layer (3) has bores (2), that is covered on both sides with an electrically conductive layer (3), wherein the layer (3) covers the inner surfaces of the bores (2) and thus electrically connects the layers (3) applied to the two sides of the substrate (12), and wherein the region of the substrate (12) is usable as a signal input (13), at which the edge regions of a part of the layer (3) from the substrate (12) opposite to another part of the layer (3), characterized in that the signal input (13) serving region of the substrate (12) has smaller dimensions, as provided with the bores (2) end face of the substrate (12). Mikrowellenresonator nach Anspruch 1, dadurch gekennzeichnet, dass die leitfähige Schicht (3), bzw. die Anordnung der Bohrungen (2) die Form einer Kreisscheibe aufweist und das Substrat (12) auf der Oberseite (4) und der Unterseite (5) mit der Schicht (3) belegt sind, dass die Bohrungen (2) am Rand der Kreisscheibe angeordnet sind, und dass in der Mitte der auf der Oberseite (4) angebrachten Schicht (3) eine Öffnung (6) als Signaleingang (13) angeordnet ist. Microwave resonator according to claim 1, characterized in that the conductive layer (3), or the arrangement of the holes (2) has the shape of a circular disk and the substrate (12) on the top (4) and the bottom (5) with the Layer (3) are occupied, that the holes (2) are arranged at the edge of the circular disk, and in that an opening (6) is arranged as the signal input (13) in the middle of the layer (3) mounted on the upper side (4). Mikrowellenresonator nach Anspruch 1, dadurch gekennzeichnet, dass die leitfähige Schicht (3), bzw. die Anordnung der Bohrungen (2) die Form einer Kreisscheibe aufweist und das Substrat (12) auf der Oberseite (4) und der Unterseite (5) mit der Schicht (3) belegt sind, dass die Bohrungen (2) am Rand der Kreisscheibe angeordnet sind, und dass die Kreisscheibe als Signaleingang (13) eine von deren zentralen Bereich radial nach außen gerichtete Ankopplungszunge (8) mit der Länge L aufweist, die seitlich über einen Spalt (9) mit der Breite S von der Kreisscheibe beabstandet ist. Microwave resonator according to claim 1, characterized in that the conductive layer (3), or the arrangement of the holes (2) has the shape of a circular disk and the substrate (12) on the top (4) and the bottom (5) with the Layer (3) are occupied, that the holes (2) are arranged at the edge of the circular disk, and in that the circular disc has as signal input (13) a coupling tongue (8) of length L directed radially outwards from its central region, which is laterally spaced from the circular disc by a gap (9) of width S. Mikrowellenresonator nach Anspruch 3, dadurch gekennzeichnet, dass der Spalt (11) zwischen Ankoppelzunge (8) und Kreisscheibe kreissegmentförmig ausgebildet ist.Microwave resonator according to Claim 3, characterized in that the gap (11) between the coupling tongue (8) and the circular disk is designed in the shape of a circle segment. Mikrowellenresonator nach Anspruch 3 oder 4, gekennzeichnet durch mehr als eine Ankoppelzunge (8).Microwave resonator according to claim 3 or 4, characterized by more than one coupling tongue (8). Mikrowellenresonator nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass das Substrat (12) aus verlustarmen dielektrischen Material besteht.Microwave resonator according to one of the preceding claims, characterized in that the substrate (12) consists of low-loss dielectric material. Mikrowellenresonator nach Anspruch 6, dadurch gekennzeichnet, dass das Substrat (12) aus Aluminiumoxid, Saphir, Quarzglas, Teflon oder dergleichen besteht.Microwave resonator according to claim 6, characterized in that the substrate (12) consists of alumina, sapphire, quartz glass, Teflon or the like. Mikrowellenresonator nach einem der vorhergehenden Ansprüche, dadurch gekennzeichnet, dass die Schicht (3) aus leitfähigen Material besteht.Microwave resonator according to one of the preceding claims, characterized in that the layer (3) consists of conductive material. Mikrowellenresonator nach Anspruch 8, dadurch gekennzeichnet, dass die Schicht (3) aus Gold, Silber, Kupfer, Aluminium, Supraleiter oder dergleichen besteht.Microwave resonator according to claim 8, characterized in that the layer (3) consists of gold, silver, copper, aluminum, superconductor or the like.
EP03006616A 2002-03-27 2003-03-25 Microwave resonator Expired - Lifetime EP1349232B1 (en)

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US4727342A (en) * 1985-09-24 1988-02-23 Murata Manufacturing Co., Ltd. Dielectric resonator
EP0487396A1 (en) * 1990-11-21 1992-05-27 Valtronic France Passive band-pass filter
US5208561A (en) * 1990-12-27 1993-05-04 Thomson-Csf Load for ultrahigh frequency three-plate stripline with dielectric substrate
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DE50307048D1 (en) 2007-05-31
DE10213766B4 (en) 2017-01-12

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