EP1287372A2 - Procede de fabrication d'un pont de wheatstone comportant des elements de pontage constitues d'un systeme de vannes rotatives - Google Patents

Procede de fabrication d'un pont de wheatstone comportant des elements de pontage constitues d'un systeme de vannes rotatives

Info

Publication number
EP1287372A2
EP1287372A2 EP01960282A EP01960282A EP1287372A2 EP 1287372 A2 EP1287372 A2 EP 1287372A2 EP 01960282 A EP01960282 A EP 01960282A EP 01960282 A EP01960282 A EP 01960282A EP 1287372 A2 EP1287372 A2 EP 1287372A2
Authority
EP
European Patent Office
Prior art keywords
bridge elements
bridge
surface areas
adjacent
elements
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP01960282A
Other languages
German (de)
English (en)
Inventor
Arno Ehresmann
Wolfgang-Dietrich Engel
Jürgen FASSBENDER
Burkard Hillebrands
Roland Mattheis
Tim Mewes
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institut fuer Physikalische Hochtechnologie eV
Original Assignee
Institut fuer Physikalische Hochtechnologie eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institut fuer Physikalische Hochtechnologie eV filed Critical Institut fuer Physikalische Hochtechnologie eV
Publication of EP1287372A2 publication Critical patent/EP1287372A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12375—All metal or with adjacent metals having member which crosses the plane of another member [e.g., T or X cross section, etc.]

Definitions

  • Wheatstone bridge comprising bridge elements consisting of a spin valve system, and a method for their production
  • the invention relates to a Wheatstone bridge, comprising conventionally connected bridge elements, consisting of a spin valve system, and to a method for their production.
  • Such Wheatstone bridges are preferably used as sensors for measuring small magnetic fields and used as non-contact angle detectors.
  • magnetoresistive strip conductors are used according to the prior art, which are anisotropically connected with respect to their magnetoresistive properties and generally as a Wheatstone bridge (cf. for example DD 256 628, DE 43 17 512 AI).
  • the magnetoresistive strip conductors used here have anisotropic changes in resistance with respect to an external magnetic field, which is a desirable property for the intended use, for example as an angle encoder.
  • such strip lines for example based on Permalloy, only show maximum changes in resistance of approximately 2-3%, which is why a relatively high level of electronic and manufacturing effort has to be carried out.
  • Magnetoresistive sensors are designed in a known manner in the form of Wheatstone bridges in order to minimize or totally suppress environmental influences such as temperature changes on the measurement signal.
  • the construction of such Wheatstone bridges presupposes that adjacent bridge branches of a half-bridge behave in the opposite direction to the magnetoresistive change in resistance when exposed to an external magnetic field.
  • Layer systems with a so-called spin valve effect are also known, which are preferably used for the detection of small fields or also for angle detection (cf., for example, DE 43 01 704 AI).
  • a common feature of these layer systems is that they consist of magnetic individual layers in which, ideally, a sensor layer can be easily rotated magnetically and a bias layer is magnetically immovable. So far, these layers can only be operated as individual magnetoresistive strip sensors, which means that they are comparatively high Signals can be obtained, but also all other disturbances, such as temperature fluctuations, influence the measurement signal.
  • a solution to remedy this problem is described in DE 196 49 265 AI, which describes a GMR sensor with a Wheatstone bridge, in which spin valve layer systems are used for the individual bridge elements.
  • this solution requires a relatively complicated layout of the Wheatstone bridges arranged on relatively large chip areas (1 ... 4 mmr). Due to the layout required there, further miniaturization is not possible with this solution.
  • the layer structure of a spin valve system can be designed as a GMR layer system (using giant magnetoresistive materials) or as a TMR layer system (tunnel layer system).
  • the layer system consists of at least one antiferromagnetic layer, a ferromagnetic layer pinned by the antiferromagnet via an exchange bias, which can itself be part of a so-called artificial antiferromagnet (AAF), at least one flux guide layer and a conductive layer arranged between these ferromagnetic layers GMR layer systems or oxide layer for tunnel arrangements, a magnetoresistive sensor system with at least two sensor elements being able to be formed by means of this layer structure. For applications, these sensor elements are usually arranged in Wheatstone bridges.
  • bias magnetization direction (BMR) is usually set by applying a homogeneous magnetic field during the deposition of the magnetic layer system on a 3-6 "Si wafer. This has the consequence that the BMR is the same everywhere.
  • patent DE 198 30 343 Cl shows how, in the case of the use of combinations of antiferromagnetic layers and layer systems which are designed as artificial antiferromagnets, an antiparallel orientation of the BMR can be achieved by a suitable choice of the layers.
  • This proposal therefore proceeds from an identical layer structure for all sensor elements or for all areas that are to form sensor elements. This generally creates harmful asymmetries in terms of resistance and, above all, the temperature coefficient of resistance, which has a detrimental effect on operating behavior.
  • a second possibility is to build the Wheatstone bridges hybrid in such a way that the bridge branches consist of elements that are rotated geometrically by 180 ° in order to achieve an anti-parallel position of the BMR.
  • the former method requires suitable additional layers with suitable properties in the AAF.
  • the latter solution means a considerable additional effort in the production of the Wheatstone bridges, namely additional assembly effort and additional effort for the wiring, which in addition to higher costs also results in a deterioration in reliability.
  • the invention has for its object to provide a Wheatstone bridge, including bridge elements, consisting of a spin valve system, and a method for their production, which create a Wheatstone bridge while maintaining an initially uniform layer structure and a uniform bias magnetization (BMR), in which each adjacent half-bridges each have an anti-parallel BMR, the miniaturization of the Wheatstone bridge should not be limited by a circuitry complicated layout.
  • bridge elements consisting of a spin valve system
  • BMR uniform bias magnetization
  • FIG. 1b shows a Wheatstone bridge with the specified direction of magnetization of the bridge elements during an ion implantation
  • FIG. 1c shows a Wheatstone bridge with the specified direction of magnetization of the bridge elements after the ion implantation
  • FIG Spin valve layer system of the same
  • FIG. 2b shows a section of a wafer covered with
  • FIG. 2c shows a detail from a wafer according to FIG. 2b with surface elements and the direction of magnetization according to FIG.
  • a substrate S is initially assumed, which is initially provided with a spin valve layer system in the usual way.
  • an exemplary layer sequence of permalloy 14, copper 13, cobalt 12, and an antiferromagnetic layer 11, which consists of FeMn, NiO, PtMn, NiMn or the like. can exist, a GMR spin valve layer system is formed.
  • a homogeneous magnetic field is applied during the production of the layer pack, so that a uniformly oriented magnetization ml is "frozen" (pinned) in the boundary layer between the layers 11 and 12.
  • a TMR spin valve layer system is implemented, in which the same layers 11, 12, 14 are provided, but the layer 13 is formed by a tunnel layer, for example made of Al2O3. It is also within the scope of the invention to form the layer 12 as an artificial antiferromagnet (AAF: artificial antiferromagnet) (cf. FIG. 3), so that an AF / AAF layer system is formed according to FIG. Further customary protective layers, for example made of Ta, which cover the layer systems mentioned, as well as any necessary adhesive layers, which are deposited directly on the substrate S before said layer systems are deposited, are not included for reasons of clarity.
  • AAF artificial antiferromagnet
  • 80,000 such surface areas are provided on a 6 "silicon wafer, so that 20,000 Wheatstone bridges, each taking up an area of 0.5 mm 2 , can be produced at the same time.
  • the wiring of the individual Bridge elements can take place before the deposition of the spin valve layer systems mentioned, or in a later process step.
  • the thicknesses of the individual layers 11, 12, 13, 14 are between 0.5 and 50 nm, depending on the embodiment.
  • a silicon wafer provided with a 1.5 ⁇ m thick S1O2 and a 5 nm thick Ta layer can be a typical one 3 with a 5 nm thick Py layer, a 3 nm thick Cu layer, a 4 nm thick Co layer, a 20 nm thick FeMn layer (AF) and a 5 nm thick Ta protective layer, not shown be provided.
  • AF FeMn layer
  • Ta protective layer not shown be provided.
  • the bridge elements 2, 4 or surface areas 20, 40 are provided with a cover 5, which is made of a structured photoresist with a thickness of 10 to be determined depending on the ion type and energy nm to 6 ⁇ m, in the example 1.5 ⁇ m (cf. FIG. 1b), or by a mask (not shown) which is provided with regions which are transparent and non-transparent for ions or a corresponding shadow mask, which in the example in each case represents the bridge elements 1, 3 or surface elements 10, 30 leaves free and only covers the areas 2, 4 or 20, 40, provided.
  • a cover 5 which is made of a structured photoresist with a thickness of 10 to be determined depending on the ion type and energy nm to 6 ⁇ m, in the example 1.5 ⁇ m (cf. FIG. 1b), or by a mask (not shown) which is provided with regions which are transparent and non-transparent for ions or a corresponding shadow mask, which in the example in each case represents the bridge elements 1, 3 or surface elements 10, 30 leaves free and only covers the
  • the special thickness of the cover layer or the masking areas of the shadow mask depends on the energy of the ions to be implanted, which can be predetermined in a specific system; Thicknesses mentioned can therefore be subject to greater fluctuations, but must be set at least so large that they are not penetrated by the ions.
  • the wafers are then subjected to an ion implantation in an ion beam system with a dose of 10 12 to 10 16 atoms / cm 2 with, for example, noble gas ions (He, Ne, Ar), with other doping ions, such as Ga, P or B, used for semiconductor doping processes ions that are unusual for this purpose can also be considered, bombarded with an energy of .JOOO keV, a homogeneous magnetic field, in the example of a thickness of 0.2 T, being applied to the substrate at the same time, which changes the direction of magnetization in the pinned ferromagnetic layer 12 by 180 ° deflects or regarding Aligns the magnetization direction to be aligned ferromagnetic layer 12 (see. Fig.
  • Non-adjacent bridge elements 1, 3 or 2, 4 are below the pinned ferromagnetic layer 12 and possibly into the substrate S, but not within the ferromagnetic layer 12, with a doping of implantable ions I with a proportion between 10 12 to 5 • 10 16 atoms / cm 2 , as is indicated schematically in FIGS. 3, 4 and 6.
  • a scanned ion fine beam can also be used for ion implantation, which only detects the bridge elements or surface areas whose pinned magnetization direction ml is to be rotated.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Thin Magnetic Films (AREA)
  • Measuring Magnetic Variables (AREA)

Abstract

L'invention concerne un pont de Wheatstone comportant des éléments de pontage montés de manière habituelle, constitués d'un système de vannes rotatives, ainsi qu'un procédé de fabrication de ce pont de Wheatstone. L'invention vise à mettre en oeuvre un pont de Wheatstone dans lequel des demi-ponts adjacents présentent respectivement un sens de magnétisation de polarisation antiparallèle. A cet effet, des éléments de pontage non-adjacents (1,3 ; 2, 4) sont pourvus d'un dopage d'ions implantables dans une quantité de 1.10<12> à 5.10<16> atomes/cm<2 >en dessous de la couche ferromagnétique à broches d'un système de couches de vannes rotatives à magnétorésistance élevée ou d'un système de couches de vannes rotatives tunnel. Lors d'un bombardement de zones de ponts sélectionnées (1, 3) ou de zones surfaciques n'étant pas pourvues d'un revêtement (5), avec des ions de dose et d'énergie faibles de dimension suffisamment élevée pour que ces ions traversent la couche ferromagnétique à broches, toutes les zones surfaciques ou tous les éléments de pont (1, 2, 3, 4) sont soumis à un champ magnétique homogène ciblé suffisamment puissant.
EP01960282A 2000-06-09 2001-06-07 Procede de fabrication d'un pont de wheatstone comportant des elements de pontage constitues d'un systeme de vannes rotatives Withdrawn EP1287372A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10028640A DE10028640B4 (de) 2000-06-09 2000-06-09 Wheatstonebrücke, beinhaltend Brückenelemente, bestehend aus einem Spin-Valve-System, sowie ein Verfahren zu deren Herstellung
DE10028640 2000-06-09
PCT/EP2001/006486 WO2001094963A2 (fr) 2000-06-09 2001-06-07 Pont de wheatstone comportant des elements de pontage constitues d'un systeme de vannes rotatives, et procede de fabrication

Publications (1)

Publication Number Publication Date
EP1287372A2 true EP1287372A2 (fr) 2003-03-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
EP01960282A Withdrawn EP1287372A2 (fr) 2000-06-09 2001-06-07 Procede de fabrication d'un pont de wheatstone comportant des elements de pontage constitues d'un systeme de vannes rotatives

Country Status (4)

Country Link
US (1) US6882145B2 (fr)
EP (1) EP1287372A2 (fr)
DE (1) DE10028640B4 (fr)
WO (1) WO2001094963A2 (fr)

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Also Published As

Publication number Publication date
US6882145B2 (en) 2005-04-19
WO2001094963A2 (fr) 2001-12-13
DE10028640B4 (de) 2005-11-03
US20040023064A1 (en) 2004-02-05
WO2001094963A3 (fr) 2002-04-04
DE10028640A1 (de) 2001-12-20

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