Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/10—Measuring as part of the manufacturing process
  • H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
  • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L23/00—Details of semiconductor or other solid state devices
  • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
  • H01L23/64—Impedance arrangements
  • H01L23/66—High-frequency adaptations
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
  • H01L2924/0001—Technical content checked by a classifier
  • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

• the present invention relates to a method for manufacturing an integrated electronic component comprising a step making it possible to adjust the value of an electrical parameter of said component to a desired value, or at least to reduce the dispersion of this value relative to the desired value.
• This method can thus be implemented to reduce the dispersion of the value of a capacitance, a resistance or any other electrical parameter of the integrated component.
• the method according to the invention can be applied a. all types of electronic components.
• the applications are particularly advantageous in the field of contactless smart cards and electronic labels or badges.
• These devices to. contactless communication generally comprise a microcircuit connected to a resonant circuit of type L, C.
• This circuit consists, in practice, of an external antenna L connected in parallel on the capacitance C of the microcircuit.
• this type of component operates on the principle of self-supply in which the energy, coming from the radiofrequency carrier, is stored in a capacity C.
• contactless devices operate on the basis of communication by Radio Fre ⁇ uence (RF) with a read and / or write interrogator organ commonly called a reader.
• RF Radio Fre ⁇ uence
• the reader emits a signal having a carrier frequency of 13.56 MHz.
• This transmitted signal allows on the one hand to power the contactless device which thus obtains the energy necessary for its operation by induction.
• this RF signal makes it possible to establish communication with the contactless device according to an established protocol.
• the quality and reliability of this communication are directly linked, among other things, to the distance between the reader and the contactless device.
• the distance, or range, of RF communication between the reader and the contactless device depends on several parameters. Indeed, the quality of the communication is dependent on the frequency of agreement between the resonant circuit of the contactless device and the frequency of transmission of the signal from the reader. Thus, the better the agreement between the resonant frequency of the oscillating circuit and the RF transmission frequency, the greater the range of the communication. In the context of certain applications, for which a range of 50 cm to 1 m is required, for example, the tuning of the resonant circuit at the signal carrier frequency must be very precise.
• the tuning of the resonant circuit necessarily involves adjusting the electrical parameters of the components forming this circuit, namely the antenna of the device and the capacity of the microcircuit.
• the technique of electrical adjustment by implementing adjustment capacities or resistances and by blowing a fuse or connection by transfer doors involves an additional cost in terms of surface area occupied on the component or circuit produced and manufacturing cost.
• the series resistance of the capacitor is increased, which is detrimental to the quality factor of the resonant circuit and results in a loss in range.
• Another solution has been proposed and consists in implementing a plurality of small adjustment capacities and in controlling the connection or disconnection of these adjustment capacities to the main capacity by a program stored in a non-volatile memory (EEPROM for example). of the radio frequency device each time it passes in front of the reader.
• EEPROM non-volatile memory
• the object of the present invention is to solve the drawbacks of the prior art, and to propose a low cost method for adjusting the electrical parameter on an integrated electronic component, such as a microcircuit, a detector or a transistor for example.
• the present invention relates to a manufacturing process which allows, at lower cost, to adjust an electrical parameter with an accuracy better than 3%.
• the present invention more particularly relates to a method of manufacturing an integrated electronic component disposed on a substrate wafer comprising at least two metallization steps, mainly characterized in that the value of an electrical parameter of the component is determined after a metallization step, and in that one of the following metallizations is carried out with an adjustment mask addressed from among n predefined masks to obtain a desired value of said parameter, the choice of the adjustment mask being made according to the determined value of the parameter electric.
• the method comprising a step of electrical tests, the value of the electrical parameter to be adjusted is measured with equipment identical to that used for these tests.
• the method comprising an optical measurement step carried out prior to the metallization steps, the value of the electrical parameter to be adjusted is extrapolated from this optical measurement.
• the electrical parameter to be adjusted is the intrinsic capacity of the component.
• the electrical parameter to be adjusted is the intrinsic resistance of the component. According to another application, the electrical parameter to be adjusted is the intrinsic resistance of the component.
• the same adjustment mask is used for all of the components placed on plates coming from the same production batch.
• the number of adjustment masks is between 2 and 7, so as to obtain a dispersion of the value of the electrical parameter to be adjusted less than or equal to 3 "â.
• the electronic component is a microcircuit for radio frequency communication device.
• the method according to the invention makes it possible to adjust the value of an electrical parameter with an accuracy of the order of 2.5 °, without significant additional cost for manufacturing the component.
• the need to generate n masks instead of just one according to the invention is not a drawback, with regard to the result obtained and the volume of components made.
• the management of the choice of the appropriate mask does not present any major difficulty since numerous computer routines for addressing n products exist and are well mastered in the prior art.
• the mask chosen from among the n adjustment masks can be used for all of the platelets from the same production batch, because statistically the dispersion within the same batch (approximately 50 platelets) is low, of the order of 1%.
• the method according to the invention is easily integrated into the conventional online method of manufacturing a batch of electronic components arranged on a wafer of semiconductor substrate.
• the object of the invention is to allow the adjustment of at least one electrical parameter of the component.
• a first step consists in determining the value of this parameter to be adjusted, before the last metallization of the wafer.
• the value of the parameter to be adjusted can advantageously be measured after the first metallization, Metal 1.
• measurement M can be carried out at the same time as any other series of electrical tests T. These T tests are normally provided for in the course of conventional procedures for manufacturing integrated component wafers.
• these tests are generally carried out after the second metal 2 metallization stage.
• the tests are generally carried out during the Metal stage 1 and no modification must be made for the implementation of the invention .
• the measurement M like the conventional electrical tests T, is generally carried out at five points on the wafer, and not on each electronic component. It has indeed been established, statistically, that the dispersion of an electrical parameter on the components of the same wafer is low, of the order of approximately 1 °. In addition, the dispersion of this parameter on all the platelets of the same batch is also low. We can therefore keep this value M for all the wafers of the same batch.
• the value of the parameter to be adjusted can be extrapolated from a measurement M 'prior to the metallization steps.
• the method according to the invention then comprises a step of adjusting the precise desired electrical parameter on all the components placed on wafers of the same batch.
• the adjustment step is advantageously carried out during the last step of metallization of the wafer, Metal N.
• a Metal mask N among n predefined masks is selected to carry out the last metallization and thus adjust the parameter so as to obtain an accuracy better than 3 °.
• Addressing a mask among n is possible by means of a simple computer routine which is perfectly mastered in the state of the art. In order not to modify the management program of the existing online manufacturing process, the computer routine has the function of codifying n distinct products from a single one, then to recode a single product (the selected mask) for this last metallization step.
• the number n of adjustment masks is between 2 and 7.
• the on-line manufacturing process then continues by chaining the conventional steps up to the passivation of the wafer.
• a refocusing of the parameter to be adjusted can be carried out according to the values most often determined, by measurement or by extrapolation. This refocusing can advantageously make it possible to reduce the number of adjustment masks in order to optimize the process.

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• Engineering & Computer Science (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Physics & Mathematics (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Semiconductor Integrated Circuits (AREA)
• Testing Or Measuring Of Semiconductors Or The Like (AREA)

Applications Claiming Priority (3)

Publications (1)

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Family Applications (1)

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Family Cites Families (6)

• 2000
  • 2000-03-14 FR FR0003260A patent/FR2806529B1/fr not_active Expired - Fee Related
• 2001
  • 2001-03-13 US US10/276,509 patent/US7704757B2/en active Active
  • 2001-03-13 AU AU39391/01A patent/AU3939101A/en not_active Abandoned
  • 2001-03-13 WO PCT/FR2001/000750 patent/WO2001069671A1/fr active Application Filing
  • 2001-03-13 EP EP01913999A patent/EP1264338A1/de not_active Withdrawn

Non-Patent Citations (1)

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