EP1151446A1 - Microswitching contact - Google Patents
Microswitching contactInfo
- Publication number
- EP1151446A1 EP1151446A1 EP00902631A EP00902631A EP1151446A1 EP 1151446 A1 EP1151446 A1 EP 1151446A1 EP 00902631 A EP00902631 A EP 00902631A EP 00902631 A EP00902631 A EP 00902631A EP 1151446 A1 EP1151446 A1 EP 1151446A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- contact
- base plate
- bending beam
- contact according
- micro
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/02—Contacts characterised by the material thereof
- H01H1/021—Composite material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H1/00—Contacts
- H01H1/0036—Switches making use of microelectromechanical systems [MEMS]
- H01H2001/0052—Special contact materials used for MEMS
- H01H2001/0057—Special contact materials used for MEMS the contact materials containing refractory materials, e.g. tungsten
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H50/00—Details of electromagnetic relays
- H01H50/005—Details of electromagnetic relays using micromechanics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01H—ELECTRIC SWITCHES; RELAYS; SELECTORS; EMERGENCY PROTECTIVE DEVICES
- H01H59/00—Electrostatic relays; Electro-adhesion relays
- H01H59/0009—Electrostatic relays; Electro-adhesion relays making use of micromechanics
Definitions
- the present invention relates to a mechanically closing electrical micro switch contact.
- Switch contacts of this type are required wherever large electrical currents are to be switched in a confined space, for example in sensors, actuators and high-performance / high-temperature applications, for example in the Power electronics, automotive electronics or in chemically aggressive environments.
- micromechanical switches are fast, shock-resistant and require very little control power for electrostatic drives and, on top of that, usually have negligible control leakage currents. Miniaturization also allows implementation in microwave Circuits where high power pulse operation is required.
- Microswitches and micro-relays can be based on the electrostatic (capacitive), magnetic or inductive principle or can also be switched by changing the temperature.
- the structures of such microswitches are generally based on silicon or metal or ceramic micromechanical concepts.
- silicon coated with silicon dioxide usually serves as an electrically insulating substrate, while the contacts consist of different multilayer material systems. A complex material system and a correspondingly complex procedure are therefore required for the production.
- micro switch contact according to claim 1 and by the manufacturing method for such a micro switch contact according to claim 28.
- the micro switch contact according to the invention has two electrically conductive contact elements which, in the closed state, touch in the region of two electrically conductive contact surfaces. At least one of the two contact surfaces consists of highly doped, conductive and therefore quasi-metallic diamond, silicon carbide (SiC), galium nitride (GaN), boron nitride (BN), aluminum nitride (A1N) and / or aluminum gallium nitride (AlGaN). Diamond in particular is characterized by a high debye temperature and is therefore elastic up to high temperatures and has a high temperature conductivity. Furthermore, these materials have the property that their electrical properties can be changed by doping between insulating, semiconducting and quasi-metallic.
- Diamond also has a high wear resistance and mechanical stability, which leads to a long service life of the switch contact.
- the microswitch according to the invention can be used at very high temperatures, for example up to 800 ° C., and switch a high current density (with high power dissipation), for example of 1 ⁇ 10 6 A / cm 2 at ⁇ 600 ° C. operating temperature. These properties are achieved through a single base material enables. Because there is no plastic deformation, even at high temperatures in diamond, no change in the threshold voltage is to be expected at temperatures even above T> 600 ° C.
- Threshold voltage is understood to mean the minimum required switching voltage and switching limit frequency is the maximum switching frequency that can be stably generated.
- micro switch contact it is possible to produce very small free-standing layer structures, for example bending beams with a thickness between usually 0.5 to 10 ⁇ m. This reduces the inertia of the moving element and thus increases the switching dynamics.
- Such small layer thicknesses with high bending stiffness and breaking strength are currently not feasible with ceramic and hybrid structures.
- one or preferably both contact surfaces of the contact elements can consist of diamond, SiC, AIN, BN, GaN and / or AlGaN.
- one of the two contact surfaces can also consist at least partially of metal (Al, Au, Cu, Ni), a carbide-forming metal and / or a highly temperature-stable metallization.
- the high-temperature stable metallization can W: Si and / or Ta: Si hold .
- One of the two contact surfaces is advantageously arranged on a base plate and / or a bending beam.
- the bending beam is preferably fixed in a self-supporting manner via an anchor arranged at one of its ends or another mechanical connection.
- Both the base plate and the anchor or the bending beam can consist of one of the above-mentioned materials diamond, SiC, GaN, AIN, BN and / or AlGaN. Cubic boron nitride is advantageously used as the BN for all layers and elements of the micro switch contact according to the invention.
- a control electrode can be attached to the base plate below the bending beam which can be moved in the direction of the base plate by means of the electrostatic principle of the bending beams.
- Metallization as external contacts for applying the control voltage are also arranged laterally on this control electrode outside the area covered by the bending beam.
- the contacting of the contact elements and the control electrode can also take place via the so-called via-hole technique, in which corresponding holes m the base plate are etched in at the back, so that the corresponding components to be contacted are exposed on the back and can be coated with a metallization as an external contact.
- the entire component can now be constructed from a single material, for example diamond.
- a single material for example diamond.
- the contact elements, the control electrode and the bending beam are electrically conductive, for example by heavy doping, for example with boron, nitrogen, sulfur or phosphorus.
- the base plate can consist of insulating diamond deposited using a CVD process, as can the anchor.
- the entire component can be arranged on a carrier layer, for example made of silicon. This can also be present during the manufacture of the component and subsequently removed again.
- a further insulating layer for example, can be placed between the base plate and the support layer. be made of SiO x to prevent any leakage currents through the carrier material.
- an anchored switch contact can be produced by first placing the base plate, the armature and the first contact element and, if appropriate, the control electrode on a silicon carrier, for example using CVD processes, preferably plasma CVD but also using arc jet CVD or hot - Filament CVD are deposited. A sacrificial layer is then applied, onto which the bending beam is then deposited. The bending beam is connected to the anchor and thus the base plate, so that the sacrificial layer can then be removed and the bending beam remains as a self-supporting mechanical component.
- CVD processes preferably plasma CVD but also using arc jet CVD or hot - Filament CVD are deposited.
- a sacrificial layer is then applied, onto which the bending beam is then deposited.
- the bending beam is connected to the anchor and thus the base plate, so that the sacrificial layer can then be removed and the bending beam remains as a self-supporting mechanical component.
- Figure 1 shows a micro switch contact according to the invention
- FIG. 2 shows the temperature dependence of the threshold voltage of the switching contact from FIG. 1;
- FIG. 3 shows the simulation of the temperature distribution in the vacuum of the microswitch contact from FIG. 1;
- Figure 4 shows a switching contact with a switched
- Switch contact and two shields as well Figure 5 shows a switching contact with a switched signal contact and two switched shields.
- FIG. 1 shows a micro switch contact 1 according to the invention.
- a base plate 3 made of undoped and thus non-conductive diamond deposited using a CVD method is located on a carrier layer 2 made of silicon.
- a further non-conductive diamond layer is applied as an anchor 4 to one end of the base plate.
- a contact element 7 made of diamond heavily doped with boron and therefore quasi-metallic.
- a bending beam 5 made of diamond, which is also quasi-metallic conductive via strong boron doping.
- the height of the armature 4 determines the distance of the bending beam 5 from the base plate 3.
- This bending beam 5 extends cantilevered over the first contact element 7, where a second contact element 8 made of electrically conductive diamond is arranged on its underside.
- the two contact elements 7 and 8 are at a predetermined distance from one another in the non-switched state.
- control electrode 9 made of electrically conductive diamond.
- Both the control electrode 9 and the first one Contact element 7 have metallizations made of W-Si or Au 11 or 10, which serve as external contacts for applying voltages and currents to the control electrode 9 or the first contact element 7. These metallizations 11 and 10 are applied outside the area covered by the bending beam 5. This prevents contact between the bending beam 5 and the metallizations 11 and 10 when the bending beam bends in the direction of arrow A.
- the second contact element 8 is electrically connected via the bending beam 5 to a metallization 6, which is attached to this bending beam and serves as an external contact. Voltage can be applied to the second contact element 8 at this metallization 6.
- the elastic properties of the bending beam 5 can be changed via the thickness and the dimensioning, so that, for example, the threshold voltage or the switching limit frequency can be set individually.
- the base plate 3 of the micro switch contact can also consist of SiC, GaN, AIN, AlGaN or BN instead of diamond.
- the carrier 2 advantageously consists of (100) -oriented silicon.
- the base plate 3 can be highly oriented and have a high surface planarity.
- the second contact 8 can alternatively also consist of a high-temperature stable metallization such as W: Si or Ta: Si.
- the second contact element 8 made of diamond and the first contact element 7 consist of such a high-temperature stable metallization.
- the metallization can be carried out even on a diamond substrate (“metal-coated diamond”), using the good mechanical properties of the diamond.
- Such high-temperature stable metallizations are known, for example, from high-temperature stable Schottky diode materials.
- the switch contact 1 shown in FIG. 1 is switched capacitively (electrostatically) here.
- the bending beam 5 serves as the upper capacitor plate and the control electrode 9 serves as the lower electrode.
- the switching voltage can be set between a few volts and a few 10 volts.
- the bending beam 5 has a thickness between 0.5 and 10 ⁇ m.
- FIG. 2 shows the measured temperature dependency of the threshold voltage of the micro switch contact 1 shown in FIG. 1. It is not difficult to see that switching up to temperatures well above 600 ° C. is possible without changing the threshold voltage
- FIG. 3 shows the simulated temperature distribution in a vacuum of the micro switch contact 1 shown in FIG. 1 at a current density of 1 ⁇ 10 ⁇ A / cm 2 .
- the high thermal conductivity of diamond means that high power losses can be dissipated.
- the switch contact tolerates high temperatures.
- FIG. 4 shows a further example of a micro switch contact according to the invention, in which shields for HF frequencies are provided.
- corresponding elements are provided with corresponding reference symbols as in FIG. 1 and are therefore not explained further.
- a bending beam 5 is now attached to the armature 4 and has three different metallizations 6a, 6b and 6c that are electrically separated from one another.
- the bending beam itself is made of electrically insulating diamond, while the metallization 6a, 6b, 6c are each connected to contact elements 8a, 8b and 8c.
- the metallizations 6a, 6b and 6c are connected to further metallizations 12a, 12b and 12c on the side of the armature 4.
- the bending beam 5 thus carries a total of 3 shift fingers, the middle shift finger with the metallization 6b being used for signal transmission, while the other two
- Shift fingers with the metallizations 6a and 6c are shielded to ground. If the bending beam 5 is now bent by applying a corresponding voltage to the control electrode 9, the contact elements 6a, 6b and 6c are connected to the corresponding contact elements 7a, 7b and 7c on the diamond substrate 3. Consequently, electrical contact is made between the metallizations 12a, 12b and 12c with the metallizations 10a, 10b and 10c, respectively. This means that not only the signal but also the corresponding ground shielding is switched through.
- FIG. 4B shows a cross section through each of the individual shift fingers, it being noted that all the shift fingers are arranged on the same bending beam 5.
- the indices a, b and c have been omitted here because each of these shift fingers has the same structure.
- Switch contact which also has three fingers, but only the middle signal contact is switched.
- FIG. 5 like in FIG. 4, corresponding elements are also provided with corresponding reference symbols as in FIG. 1, so that their description is dispensed with.
- FIG. 5B shows a cross section through a mass-leading switch contact, in which a metallization 14 is applied to the common bending beam 5. Furthermore, a metallization 13 is applied between the insulating diamond layer 3 and the armature 4. ordered, which extends over the entire length of the switching finger and connects to each other as a mass shield on both sides of the switching contact.
- the metallization 14 on the B ⁇ egebal en 5 serves as a control electrode. Both the metallization 13 and the metallization 14 can, for example, consist of W-Si, W: Si: N, Ti, Au, possibly also with P + -Diamond layer underneath.
- the bending beam 5 is designed semi-insulating in this example.
- FIG. 5C shows the middle switching finger, which functions as a signal line.
- This switch contact is designed in the same way as the switch contact, which is shown in FIG. 4B, and is therefore not described further here.
- FIG. 5A shows a top view of the entire switching contact, wherein it can be seen here that only the middle switching finger makes electrical contact between the two contact elements 7 and 8 when the bending beam 5 bends.
- the beam 5 is deflected electrostatically by applying a voltage between the beam contact 14 and the substrate ground plane 13.
- the diamond contact is closed via the contact elements 7, 8 and a signal current can flow via the metallization 12, 6, via the contact elements 8, 7 and the metallization 10.
- the beam metallizations 14 for the control voltage are from the substrate mass metallization 13 lying below and next to it via the insulating armature 4 electrically isolated.
- the two signal metallizations 6 are connected to the substrate signal metallization 12, wherein the two metallizations 12 and 13 and the two metallizations 10 and 13 are each spatially and thus electrically separated from one another.
- micro switch contact makes it possible to switch very high currents at very high temperatures. It is particularly exploited that diamond, depending on its doping, has very variable electrical properties and can be used as a multifunctional material. Diamond has high thermal conductivity and high heat resistance.
- the microswitch according to the invention is chemically inert, has a long service life, high impact resistance, high switching dynamics and minimal material complexity and is lent to microwaves.
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Contacts (AREA)
- Micromachines (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Push-Button Switches (AREA)
Abstract
Description
Claims
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19902868 | 1999-01-25 | ||
DE19902868 | 1999-01-25 | ||
PCT/EP2000/000552 WO2000044012A1 (en) | 1999-01-25 | 2000-01-25 | Microswitching contact |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1151446A1 true EP1151446A1 (en) | 2001-11-07 |
EP1151446B1 EP1151446B1 (en) | 2003-05-07 |
Family
ID=7895324
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP00902631A Expired - Lifetime EP1151446B1 (en) | 1999-01-25 | 2000-01-25 | Microswitching contact |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1151446B1 (en) |
JP (1) | JP2003527727A (en) |
AT (1) | ATE239974T1 (en) |
AU (1) | AU2440000A (en) |
DE (2) | DE10080131D2 (en) |
WO (1) | WO2000044012A1 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6396368B1 (en) * | 1999-11-10 | 2002-05-28 | Hrl Laboratories, Llc | CMOS-compatible MEM switches and method of making |
US6426722B1 (en) | 2000-03-08 | 2002-07-30 | Hrl Laboratories, Llc | Polarization converting radio frequency reflecting surface |
US6812903B1 (en) | 2000-03-14 | 2004-11-02 | Hrl Laboratories, Llc | Radio frequency aperture |
US6518931B1 (en) | 2000-03-15 | 2003-02-11 | Hrl Laboratories, Llc | Vivaldi cloverleaf antenna |
US6483480B1 (en) | 2000-03-29 | 2002-11-19 | Hrl Laboratories, Llc | Tunable impedance surface |
US6538621B1 (en) | 2000-03-29 | 2003-03-25 | Hrl Laboratories, Llc | Tunable impedance surface |
US6552696B1 (en) | 2000-03-29 | 2003-04-22 | Hrl Laboratories, Llc | Electronically tunable reflector |
US6483481B1 (en) | 2000-11-14 | 2002-11-19 | Hrl Laboratories, Llc | Textured surface having high electromagnetic impedance in multiple frequency bands |
DE10061278B4 (en) * | 2000-12-08 | 2004-09-16 | GFD-Gesellschaft für Diamantprodukte mbH | Instrument for surgical purposes |
US6558380B2 (en) | 2000-12-08 | 2003-05-06 | Gfd Gesellschaft Fur Diamantprodukte Mbh | Instrument for surgical purposes and method of cleaning same |
US6740942B2 (en) | 2001-06-15 | 2004-05-25 | Hrl Laboratories, Llc. | Permanently on transistor implemented using a double polysilicon layer CMOS process with buried contact |
US6670921B2 (en) | 2001-07-13 | 2003-12-30 | Hrl Laboratories, Llc | Low-cost HDMI-D packaging technique for integrating an efficient reconfigurable antenna array with RF MEMS switches and a high impedance surface |
US6739028B2 (en) | 2001-07-13 | 2004-05-25 | Hrl Laboratories, Llc | Molded high impedance surface and a method of making same |
US6545647B1 (en) | 2001-07-13 | 2003-04-08 | Hrl Laboratories, Llc | Antenna system for communicating simultaneously with a satellite and a terrestrial system |
US6768412B2 (en) | 2001-08-20 | 2004-07-27 | Honeywell International, Inc. | Snap action thermal switch |
EP1426992A3 (en) * | 2002-12-05 | 2005-11-30 | Omron Corporation | Electrostatic mems switch |
JP4182861B2 (en) | 2002-12-05 | 2008-11-19 | オムロン株式会社 | Contact switch and device with contact switch |
JP5626972B2 (en) * | 2010-07-21 | 2014-11-19 | 独立行政法人物質・材料研究機構 | Manufacturing method of electromechanical switch |
US9466887B2 (en) | 2010-11-03 | 2016-10-11 | Hrl Laboratories, Llc | Low cost, 2D, electronically-steerable, artificial-impedance-surface antenna |
US8994609B2 (en) | 2011-09-23 | 2015-03-31 | Hrl Laboratories, Llc | Conformal surface wave feed |
US8982011B1 (en) | 2011-09-23 | 2015-03-17 | Hrl Laboratories, Llc | Conformal antennas for mitigation of structural blockage |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4954170A (en) * | 1989-06-30 | 1990-09-04 | Westinghouse Electric Corp. | Methods of making high performance compacts and products |
GB9111474D0 (en) * | 1991-05-29 | 1991-07-17 | De Beers Ind Diamond | Boron doped diamond |
US5413668A (en) * | 1993-10-25 | 1995-05-09 | Ford Motor Company | Method for making mechanical and micro-electromechanical devices |
FR2731715B1 (en) * | 1995-03-17 | 1997-05-16 | Suisse Electronique Microtech | MICRO-MECHANICAL PART AND METHOD FOR PRODUCING THE SAME |
-
2000
- 2000-01-19 DE DE10080131T patent/DE10080131D2/en not_active Expired - Lifetime
- 2000-01-25 JP JP2000595355A patent/JP2003527727A/en active Pending
- 2000-01-25 DE DE50002067T patent/DE50002067D1/en not_active Expired - Fee Related
- 2000-01-25 EP EP00902631A patent/EP1151446B1/en not_active Expired - Lifetime
- 2000-01-25 AT AT00902631T patent/ATE239974T1/en not_active IP Right Cessation
- 2000-01-25 AU AU24400/00A patent/AU2440000A/en not_active Abandoned
- 2000-01-25 WO PCT/EP2000/000552 patent/WO2000044012A1/en active IP Right Grant
Non-Patent Citations (1)
Title |
---|
See references of WO0044012A1 * |
Also Published As
Publication number | Publication date |
---|---|
ATE239974T1 (en) | 2003-05-15 |
JP2003527727A (en) | 2003-09-16 |
WO2000044012A1 (en) | 2000-07-27 |
AU2440000A (en) | 2000-08-07 |
DE10080131D2 (en) | 2002-04-25 |
DE50002067D1 (en) | 2003-06-12 |
EP1151446B1 (en) | 2003-05-07 |
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