EP1145324A3 - Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure - Google Patents

Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure

Info

Publication number
EP1145324A3
EP1145324A3 EP00920348A EP00920348A EP1145324A3 EP 1145324 A3 EP1145324 A3 EP 1145324A3 EP 00920348 A EP00920348 A EP 00920348A EP 00920348 A EP00920348 A EP 00920348A EP 1145324 A3 EP1145324 A3 EP 1145324A3
Authority
EP
European Patent Office
Prior art keywords
transistor structure
mos
trench
producing
methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP00920348A
Other languages
German (de)
French (fr)
Other versions
EP1145324A2 (en
Inventor
Franz Hirler
Wolfgang Werner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Publication of EP1145324A2 publication Critical patent/EP1145324A2/en
Publication of EP1145324A3 publication Critical patent/EP1145324A3/en
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/063—Reduced surface field [RESURF] pn-junction structures
    • H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1095—Body region, i.e. base region, of DMOS transistors or IGBTs

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Composite Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP00920348A 1999-03-24 2000-03-01 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure Withdrawn EP1145324A3 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19913375A DE19913375B4 (en) 1999-03-24 1999-03-24 Method for producing a MOS transistor structure
DE19913375 1999-03-24
PCT/DE2000/000621 WO2000057481A2 (en) 1999-03-24 2000-03-01 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure

Publications (2)

Publication Number Publication Date
EP1145324A2 EP1145324A2 (en) 2001-10-17
EP1145324A3 true EP1145324A3 (en) 2001-10-24

Family

ID=7902261

Family Applications (1)

Application Number Title Priority Date Filing Date
EP00920348A Withdrawn EP1145324A3 (en) 1999-03-24 2000-03-01 Mos-transistor structure with a trench-gate electrode and a reduced specific closing resistor and methods for producing an mos transistor structure

Country Status (5)

Country Link
US (1) US6465843B1 (en)
EP (1) EP1145324A3 (en)
JP (1) JP2002540603A (en)
DE (1) DE19913375B4 (en)
WO (1) WO2000057481A2 (en)

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US6710403B2 (en) 2002-07-30 2004-03-23 Fairchild Semiconductor Corporation Dual trench power MOSFET
US6803626B2 (en) 2002-07-18 2004-10-12 Fairchild Semiconductor Corporation Vertical charge control semiconductor device
US6916745B2 (en) 2003-05-20 2005-07-12 Fairchild Semiconductor Corporation Structure and method for forming a trench MOSFET having self-aligned features
US6818513B2 (en) 2001-01-30 2004-11-16 Fairchild Semiconductor Corporation Method of forming a field effect transistor having a lateral depletion structure
JP4932088B2 (en) 2001-02-19 2012-05-16 ルネサスエレクトロニクス株式会社 Insulated gate type semiconductor device manufacturing method
US7009247B2 (en) * 2001-07-03 2006-03-07 Siliconix Incorporated Trench MIS device with thick oxide layer in bottom of gate contact trench
US7291884B2 (en) * 2001-07-03 2007-11-06 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide
US6569738B2 (en) * 2001-07-03 2003-05-27 Siliconix, Inc. Process for manufacturing trench gated MOSFET having drain/drift region
US20060038223A1 (en) * 2001-07-03 2006-02-23 Siliconix Incorporated Trench MOSFET having drain-drift region comprising stack of implanted regions
US7033876B2 (en) 2001-07-03 2006-04-25 Siliconix Incorporated Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the same
US6764906B2 (en) * 2001-07-03 2004-07-20 Siliconix Incorporated Method for making trench mosfet having implanted drain-drift region
US6849898B2 (en) 2001-08-10 2005-02-01 Siliconix Incorporated Trench MIS device with active trench corners and thick bottom oxide
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US7576388B1 (en) 2002-10-03 2009-08-18 Fairchild Semiconductor Corporation Trench-gate LDMOS structures
US6710418B1 (en) 2002-10-11 2004-03-23 Fairchild Semiconductor Corporation Schottky rectifier with insulation-filled trenches and method of forming the same
JP5299373B2 (en) * 2003-01-16 2013-09-25 富士電機株式会社 Semiconductor element
US7652326B2 (en) 2003-05-20 2010-01-26 Fairchild Semiconductor Corporation Power semiconductor devices and methods of manufacture
US7166890B2 (en) 2003-10-21 2007-01-23 Srikant Sridevan Superjunction device with improved ruggedness
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US7368777B2 (en) 2003-12-30 2008-05-06 Fairchild Semiconductor Corporation Accumulation device with charge balance structure and method of forming the same
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TWI256676B (en) * 2004-03-26 2006-06-11 Siliconix Inc Termination for trench MIS device having implanted drain-drift region
US7045857B2 (en) * 2004-03-26 2006-05-16 Siliconix Incorporated Termination for trench MIS device having implanted drain-drift region
US7352036B2 (en) 2004-08-03 2008-04-01 Fairchild Semiconductor Corporation Semiconductor power device having a top-side drain using a sinker trench
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JP2006269720A (en) * 2005-03-24 2006-10-05 Toshiba Corp Semiconductor device and its fabrication process
CN101185169B (en) 2005-04-06 2010-08-18 飞兆半导体公司 Trenched-gate field effect transistors and methods of forming the same
JP2008546216A (en) 2005-06-10 2008-12-18 フェアチャイルド・セミコンダクター・コーポレーション Charge balanced field effect transistor
US7492003B2 (en) * 2006-01-24 2009-02-17 Siliconix Technology C. V. Superjunction power semiconductor device
US7446374B2 (en) 2006-03-24 2008-11-04 Fairchild Semiconductor Corporation High density trench FET with integrated Schottky diode and method of manufacture
US7319256B1 (en) 2006-06-19 2008-01-15 Fairchild Semiconductor Corporation Shielded gate trench FET with the shield and gate electrodes being connected together
US20090053869A1 (en) * 2007-08-22 2009-02-26 Infineon Technologies Austria Ag Method for producing an integrated circuit including a trench transistor and integrated circuit
JP2010541212A (en) 2007-09-21 2010-12-24 フェアチャイルド・セミコンダクター・コーポレーション Superjunction structure and manufacturing method for power device
US9484451B2 (en) 2007-10-05 2016-11-01 Vishay-Siliconix MOSFET active area and edge termination area charge balance
US7772668B2 (en) 2007-12-26 2010-08-10 Fairchild Semiconductor Corporation Shielded gate trench FET with multiple channels
JP5298565B2 (en) * 2008-02-22 2013-09-25 富士電機株式会社 Semiconductor device and manufacturing method thereof
US20120273916A1 (en) 2011-04-27 2012-11-01 Yedinak Joseph A Superjunction Structures for Power Devices and Methods of Manufacture
JP5216801B2 (en) 2010-03-24 2013-06-19 株式会社東芝 Semiconductor device
US8319290B2 (en) 2010-06-18 2012-11-27 Fairchild Semiconductor Corporation Trench MOS barrier schottky rectifier with a planar surface using CMP techniques
CN102468169A (en) * 2010-11-01 2012-05-23 中芯国际集成电路制造(上海)有限公司 N-channel metal oxide semiconductor (NMOS) transistor and formation method thereof
US8836028B2 (en) 2011-04-27 2014-09-16 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8786010B2 (en) 2011-04-27 2014-07-22 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8772868B2 (en) 2011-04-27 2014-07-08 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
US8673700B2 (en) 2011-04-27 2014-03-18 Fairchild Semiconductor Corporation Superjunction structures for power devices and methods of manufacture
WO2012158977A2 (en) 2011-05-18 2012-11-22 Vishay-Siliconix Semiconductor device
CN102412266B (en) * 2011-10-13 2014-12-10 上海华虹宏力半导体制造有限公司 Power device structure capable of improving safety operation region (SOA) capacity and manufacturing method
US9431249B2 (en) 2011-12-01 2016-08-30 Vishay-Siliconix Edge termination for super junction MOSFET devices
US9614043B2 (en) 2012-02-09 2017-04-04 Vishay-Siliconix MOSFET termination trench
US9842911B2 (en) 2012-05-30 2017-12-12 Vishay-Siliconix Adaptive charge balanced edge termination
US9508596B2 (en) 2014-06-20 2016-11-29 Vishay-Siliconix Processes used in fabricating a metal-insulator-semiconductor field effect transistor
US9887259B2 (en) 2014-06-23 2018-02-06 Vishay-Siliconix Modulated super junction power MOSFET devices
CN106575666B (en) 2014-08-19 2021-08-06 维西埃-硅化物公司 Super junction metal oxide semiconductor field effect transistor
CN105632931B (en) * 2014-11-04 2020-04-28 台湾积体电路制造股份有限公司 Method for manufacturing semiconductor device and semiconductor device
JP6032337B1 (en) * 2015-09-28 2016-11-24 富士電機株式会社 Semiconductor device and manufacturing method of semiconductor device
CN116666222A (en) * 2023-07-28 2023-08-29 江西萨瑞半导体技术有限公司 Trench MOS device and preparation method thereof

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Also Published As

Publication number Publication date
US6465843B1 (en) 2002-10-15
DE19913375A1 (en) 2000-10-05
JP2002540603A (en) 2002-11-26
EP1145324A2 (en) 2001-10-17
WO2000057481A2 (en) 2000-09-28
DE19913375B4 (en) 2009-03-26
WO2000057481A3 (en) 2001-07-26

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