IL143013A0 - Self-aligned double gate mosfet with separate gates - Google Patents

Self-aligned double gate mosfet with separate gates

Info

Publication number
IL143013A0
IL143013A0 IL14301301A IL14301301A IL143013A0 IL 143013 A0 IL143013 A0 IL 143013A0 IL 14301301 A IL14301301 A IL 14301301A IL 14301301 A IL14301301 A IL 14301301A IL 143013 A0 IL143013 A0 IL 143013A0
Authority
IL
Israel
Prior art keywords
self
double gate
gate mosfet
aligned double
separate gates
Prior art date
Application number
IL14301301A
Other versions
IL143013A (en
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/612,260 external-priority patent/US6982460B1/en
Application filed by Ibm filed Critical Ibm
Publication of IL143013A0 publication Critical patent/IL143013A0/en
Publication of IL143013A publication Critical patent/IL143013A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
IL143013A 2000-05-15 2001-05-07 Self-aligned double gate mosfet with separate gates IL143013A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US20413100P 2000-05-15 2000-05-15
US09/612,260 US6982460B1 (en) 2000-07-07 2000-07-07 Self-aligned gate MOSFET with separate gates

Publications (2)

Publication Number Publication Date
IL143013A0 true IL143013A0 (en) 2002-04-21
IL143013A IL143013A (en) 2007-06-03

Family

ID=26899213

Family Applications (1)

Application Number Title Priority Date Filing Date
IL143013A IL143013A (en) 2000-05-15 2001-05-07 Self-aligned double gate mosfet with separate gates

Country Status (8)

Country Link
JP (1) JP3872316B2 (en)
KR (1) KR100503722B1 (en)
CN (2) CN100356526C (en)
DE (1) DE10119411B4 (en)
IE (1) IE20010380A1 (en)
IL (1) IL143013A (en)
SG (1) SG103287A1 (en)
TW (1) TW490745B (en)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100497672B1 (en) * 2002-05-10 2005-07-01 재단법인서울대학교산학협력재단 Dram using aligned soi double gate transistor and process thereof
DE10241945A1 (en) * 2002-09-10 2004-03-18 Infineon Technologies Ag Production of a planar transistor used as a MOSFET comprises forming a semiconductor-on-isolator substrate, forming a gate insulating layer and a gate region on the substrate, forming a second insulating layer, and further processing
DE10245153A1 (en) * 2002-09-27 2004-04-15 Infineon Technologies Ag Integrated field effect transistor with two control areas, use of this field effect transistor and manufacturing process
JP4546021B2 (en) 2002-10-02 2010-09-15 ルネサスエレクトロニクス株式会社 Insulated gate field effect transistor and semiconductor device
JP4178296B2 (en) * 2003-03-28 2008-11-12 富士通マイクロエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
FR2853454B1 (en) 2003-04-03 2005-07-15 St Microelectronics Sa TRANSISTOR MOS HIGH DENSITY
CN1322590C (en) * 2003-06-24 2007-06-20 北京大学 A double-grid MOS transistor and method for making same
JP2005167163A (en) * 2003-12-05 2005-06-23 National Institute Of Advanced Industrial & Technology Double gate field-effect transistor
JP2005174964A (en) * 2003-12-05 2005-06-30 National Institute Of Advanced Industrial & Technology Double-gate field-effect transistor
US20070029623A1 (en) * 2003-12-05 2007-02-08 National Inst Of Adv Industrial Science And Tech Dual-gate field effect transistor
JP2005174960A (en) * 2003-12-05 2005-06-30 National Institute Of Advanced Industrial & Technology Double-gate field-effect transistor
CN100444405C (en) * 2004-07-02 2008-12-17 中华映管股份有限公司 Double grid film electric crystal and pixel structure and its producing method
KR100679693B1 (en) * 2004-10-29 2007-02-09 한국과학기술원 Non-Volatile Memory Structure for two Bits Cell Operation with Asymmetrical Work Function Double Gate and its Manufacturing
US7202117B2 (en) * 2005-01-31 2007-04-10 Freescale Semiconductor, Inc. Method of making a planar double-gated transistor
US7288805B2 (en) 2005-02-24 2007-10-30 International Business Machines Corporation Double gate isolation
KR100745902B1 (en) * 2005-10-24 2007-08-02 주식회사 하이닉스반도체 Nonvolatile ferro-electric memory device
CN101901837A (en) * 2010-06-24 2010-12-01 复旦大学 Grid-controlled PN field effect transistor and control method thereof
CN103022124B (en) * 2011-09-22 2015-08-19 中芯国际集成电路制造(北京)有限公司 Double-gated transistor and manufacture method thereof
US8685823B2 (en) * 2011-11-09 2014-04-01 International Business Machines Corporation Nanowire field effect transistor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4378627A (en) * 1980-07-08 1983-04-05 International Business Machines Corporation Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes
JPS63308386A (en) * 1987-01-30 1988-12-15 Sony Corp Semiconductor device and manufacture thereof
US5296727A (en) * 1990-08-24 1994-03-22 Fujitsu Limited Double gate FET and process for manufacturing same
US5166084A (en) * 1991-09-03 1992-11-24 Motorola, Inc. Process for fabricating a silicon on insulator field effect transistor
US5273921A (en) * 1991-12-27 1993-12-28 Purdue Research Foundation Methods for fabricating a dual-gated semiconductor-on-insulator field effect transistor
KR960002103B1 (en) * 1993-02-26 1996-02-10 현대전자산업주식회사 Double gate tft and the making method thereof
JP3253808B2 (en) * 1994-07-07 2002-02-04 株式会社半導体エネルギー研究所 Semiconductor device and manufacturing method thereof
US5604368A (en) * 1994-07-15 1997-02-18 International Business Machines Corporation Self-aligned double-gate MOSFET by selective lateral epitaxy
US5773331A (en) * 1996-12-17 1998-06-30 International Business Machines Corporation Method for making single and double gate field effect transistors with sidewall source-drain contacts
JP3699823B2 (en) * 1998-05-19 2005-09-28 株式会社東芝 Semiconductor device
US6331476B1 (en) * 1998-05-26 2001-12-18 Mausushita Electric Industrial Co., Ltd. Thin film transistor and producing method thereof
US6037204A (en) * 1998-08-07 2000-03-14 Taiwan Semiconductor Manufacturing Company Silicon and arsenic double implanted pre-amorphization process for salicide technology
US6365465B1 (en) * 1999-03-19 2002-04-02 International Business Machines Corporation Self-aligned double-gate MOSFET by selective epitaxy and silicon wafer bonding techniques
KR100372820B1 (en) * 1999-06-29 2003-02-20 주식회사 하이닉스반도체 Double silicon mosfet and method of manufacturing the same

Also Published As

Publication number Publication date
TW490745B (en) 2002-06-11
CN1219329C (en) 2005-09-14
CN100356526C (en) 2007-12-19
CN1670929A (en) 2005-09-21
JP2002016255A (en) 2002-01-18
SG103287A1 (en) 2004-04-29
IE20010380A1 (en) 2002-02-20
CN1324113A (en) 2001-11-28
JP3872316B2 (en) 2007-01-24
DE10119411A1 (en) 2001-11-29
DE10119411B4 (en) 2015-06-11
KR20010105160A (en) 2001-11-28
KR100503722B1 (en) 2005-07-26
IL143013A (en) 2007-06-03

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Legal Events

Date Code Title Description
FF Patent granted
KB Patent renewed
MM9K Patent not in force due to non-payment of renewal fees