EP1102872A4 - Nouveaux precurseurs organo-cuivreux destines au depot chimique en phase vapeur d'un film de cuivre - Google Patents

Nouveaux precurseurs organo-cuivreux destines au depot chimique en phase vapeur d'un film de cuivre

Info

Publication number
EP1102872A4
EP1102872A4 EP99959960A EP99959960A EP1102872A4 EP 1102872 A4 EP1102872 A4 EP 1102872A4 EP 99959960 A EP99959960 A EP 99959960A EP 99959960 A EP99959960 A EP 99959960A EP 1102872 A4 EP1102872 A4 EP 1102872A4
Authority
EP
European Patent Office
Prior art keywords
organocuprous
precursors
novel
vapor deposition
chemical vapor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP99959960A
Other languages
German (de)
English (en)
Other versions
EP1102872A1 (fr
Inventor
Shi Woo Rhee
Sang Ho Han
Sang Woo Kang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pohang University of Science and Technology Foundation POSTECH
Original Assignee
Pohang University of Science and Technology Foundation POSTECH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Pohang University of Science and Technology Foundation POSTECH filed Critical Pohang University of Science and Technology Foundation POSTECH
Publication of EP1102872A1 publication Critical patent/EP1102872A1/fr
Publication of EP1102872A4 publication Critical patent/EP1102872A4/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F1/00—Compounds containing elements of Groups 1 or 11 of the Periodic Table
    • C07F1/08—Copper compounds

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Chemically Coating (AREA)
EP99959960A 1999-04-15 1999-12-07 Nouveaux precurseurs organo-cuivreux destines au depot chimique en phase vapeur d'un film de cuivre Withdrawn EP1102872A4 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR9913236 1999-04-15
KR1019990013236A KR100298125B1 (ko) 1999-04-15 1999-04-15 구리의 화학 증착에 유용한 유기 구리 전구체
PCT/KR1999/000743 WO2000063461A1 (fr) 1999-04-15 1999-12-07 Nouveaux precurseurs organo-cuivreux destines au depot chimique en phase vapeur d'un film de cuivre

Publications (2)

Publication Number Publication Date
EP1102872A1 EP1102872A1 (fr) 2001-05-30
EP1102872A4 true EP1102872A4 (fr) 2008-04-30

Family

ID=19580072

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99959960A Withdrawn EP1102872A4 (fr) 1999-04-15 1999-12-07 Nouveaux precurseurs organo-cuivreux destines au depot chimique en phase vapeur d'un film de cuivre

Country Status (7)

Country Link
EP (1) EP1102872A4 (fr)
JP (1) JP2002542397A (fr)
KR (1) KR100298125B1 (fr)
CN (1) CN1194117C (fr)
RU (1) RU2181725C2 (fr)
TW (1) TW524881B (fr)
WO (1) WO2000063461A1 (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
UA78180C2 (uk) * 1997-10-03 2007-03-15 Меріаль Кільцевий вірус свині типу ii, вакцини та діагностичні реагенти
KR100358045B1 (ko) * 1999-12-22 2002-10-25 주식회사 하이닉스반도체 반도체 소자의 구리 금속 배선 형성 방법
KR100338112B1 (ko) * 1999-12-22 2002-05-24 박종섭 반도체 소자의 구리 금속 배선 형성 방법
KR100347838B1 (ko) * 2000-03-07 2002-08-07 학교법인 포항공과대학교 액상 유기구리 전구체의 열적 안정성 향상방법
DE10228050A1 (de) * 2002-06-24 2004-01-15 Merck Patent Gmbh Dikupfer(I)oxolat-Komplexe als Precursor-Substanzen zur metallischen Kupferabscheidung
DE10319454A1 (de) 2003-04-29 2004-11-18 Merck Patent Gmbh Dikupfer(I)oxalat-Komplexe als Precursor zur metallischen Kupferabscheidung
US20090098290A1 (en) * 2004-09-27 2009-04-16 Mikio Watanabe Process for formation of copper-containing films
DE102009023952A1 (de) 2009-06-04 2010-12-09 DüRR DENTAL AG Verfahren und Vorrichtung zur Bestimmung von Zahnfarben
JP5779823B2 (ja) * 2010-11-17 2015-09-16 ユーピー ケミカル カンパニー リミテッド ジアザジエン系金属化合物、これの製造方法及びこれを利用した薄膜形成方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1001047A2 (fr) * 1998-11-10 2000-05-17 Sharp Kabushiki Kaisha Précurseur de ligand à base d'alcène et procédé de synthèse

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5144049A (en) * 1991-02-04 1992-09-01 Air Products And Chemicals, Inc. Volatile liquid precursors for the chemical vapor deposition of copper
US5187300A (en) * 1991-02-04 1993-02-16 Air Products And Chemicals, Inc. Volatile precursors for copper CVD
US5358743A (en) * 1992-11-24 1994-10-25 University Of New Mexico Selective and blanket chemical vapor deposition of Cu from (β-diketonate)Cu(L)n by silica surface modification
JP3282392B2 (ja) * 1994-08-10 2002-05-13 三菱マテリアル株式会社 蒸気圧の高い有機金属化学蒸着による銅薄膜形成用有機銅化合物
US5744192A (en) * 1996-11-08 1998-04-28 Sharp Microelectronics Technology, Inc. Method of using water vapor to increase the conductivity of cooper desposited with cu(hfac)TMVS

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1001047A2 (fr) * 1998-11-10 2000-05-17 Sharp Kabushiki Kaisha Précurseur de ligand à base d'alcène et procédé de synthèse

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
DATABASE CA [online] CHEMICAL ABSTRACTS SERVICE, COLUMBUS, OHIO, US; RHEWE, SHI-WOO ET AL: "Property of hfac (hexafluoroacetylacetonate)Cu(I)DMB (3,3-dimethyl-1- butene) as a liquid precursor for chemical vapor deposition of copper films", XP002473287, retrieved from STN Database accession no. 132:159098 *
DOPPELT P ET AL: "Alkyne complexes of copper(I) (1,1,1,5,5,5-hexafluoro-2,4-pentanedion ato): syntheses and characterization of (eta<2>-bis(trimethylsilyl) acetylene) copper(I) (hfac), (mu-eta<2>-bis(trimethylsilyl) acetylene) bis(copper(I) (hfac)) and a series of (eta<2>-alkyne) Cu(hfac) complexes", JOURNAL OF ORGANOMETALLIC CHEMISTRY, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 517, no. 1, 28 June 1996 (1996-06-28), pages 53 - 62, XP004035961, ISSN: 0022-328X *
HAN'GUK CHAELYO HAKHOECHI , 9(11), 1148-1152 CODEN: HCHAEU; ISSN: 1225-0562, 1999 *
KANG S-W ET AL: "(hfac)Cu(I)(MP) (hfac=hexafluoroacetylacetonate, MP=4-methyl-1-pentene) and (hfac)Cu(I)(DMB) (DMB=3,3-dimethyl-1-bute ne) for the chemical vapor deposition of copper film", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 350, no. 1-2, 15 August 1999 (1999-08-15), pages 10 - 13, XP004180583, ISSN: 0040-6090 *
See also references of WO0063461A1 *

Also Published As

Publication number Publication date
TW524881B (en) 2003-03-21
EP1102872A1 (fr) 2001-05-30
RU2181725C2 (ru) 2002-04-27
KR100298125B1 (ko) 2001-09-13
CN1194117C (zh) 2005-03-23
KR19990046683A (ko) 1999-07-05
CN1290309A (zh) 2001-04-04
JP2002542397A (ja) 2002-12-10
WO2000063461A1 (fr) 2000-10-26

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