AU2002353021A1 - Chemical vapor deposition reactor - Google Patents
Chemical vapor deposition reactorInfo
- Publication number
- AU2002353021A1 AU2002353021A1 AU2002353021A AU2002353021A AU2002353021A1 AU 2002353021 A1 AU2002353021 A1 AU 2002353021A1 AU 2002353021 A AU2002353021 A AU 2002353021A AU 2002353021 A AU2002353021 A AU 2002353021A AU 2002353021 A1 AU2002353021 A1 AU 2002353021A1
- Authority
- AU
- Australia
- Prior art keywords
- vapor deposition
- chemical vapor
- deposition reactor
- reactor
- chemical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45502—Flow conditions in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US33763901P | 2001-12-04 | 2001-12-04 | |
US60/337,639 | 2001-12-04 | ||
US10/214,272 | 2002-08-06 | ||
US10/214,272 US20020195055A1 (en) | 2000-10-16 | 2002-08-06 | Vortex based CVD reactor |
PCT/US2002/038565 WO2003048414A1 (en) | 2001-12-04 | 2002-12-04 | Chemical vapor deposition reactor |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002353021A1 true AU2002353021A1 (en) | 2003-06-17 |
Family
ID=26908840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002353021A Abandoned AU2002353021A1 (en) | 2001-12-04 | 2002-12-04 | Chemical vapor deposition reactor |
Country Status (4)
Country | Link |
---|---|
EP (1) | EP1451387A1 (en) |
JP (1) | JP2005511895A (en) |
AU (1) | AU2002353021A1 (en) |
WO (1) | WO2003048414A1 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102011055061A1 (en) * | 2011-11-04 | 2013-05-08 | Aixtron Se | CVD reactor or substrate holder for a CVD reactor |
US8985152B2 (en) * | 2012-06-15 | 2015-03-24 | Novellus Systems, Inc. | Point of use valve manifold for semiconductor fabrication equipment |
TWI502096B (en) * | 2013-06-17 | 2015-10-01 | Ind Tech Res Inst | Reaction device and manufacture method for chemical vapor deposition |
CN103456593B (en) * | 2013-09-02 | 2016-02-10 | 东莞市中镓半导体科技有限公司 | A kind of hydride vapor phase epitaxy apparatus and method improving multiple-piece epitaxial material thickness distributing homogeneity |
JP6478103B2 (en) * | 2015-01-29 | 2019-03-06 | 株式会社Flosfia | Film forming apparatus and film forming method |
CA2974387A1 (en) * | 2016-08-30 | 2018-02-28 | Rolls-Royce Corporation | Swirled flow chemical vapor deposition |
WO2023140824A2 (en) * | 2022-01-24 | 2023-07-27 | Tobb Ekonomi Ve Teknoloji Universitesi | A reactor |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5375857A (en) * | 1976-12-17 | 1978-07-05 | Nec Corp | Vapor phase growth apparatus |
JPS54111771A (en) * | 1978-02-22 | 1979-09-01 | Toshiba Corp | Gas phase reaction unit of semiconductor substrate |
JPS6134933A (en) * | 1984-07-26 | 1986-02-19 | Fujitsu Ltd | Plasma vapor growing device |
US4596208A (en) * | 1984-11-05 | 1986-06-24 | Spire Corporation | CVD reaction chamber |
US5134963A (en) * | 1991-10-28 | 1992-08-04 | International Business Machines Corporation | LPCVD reactor for high efficiency, high uniformity deposition |
-
2002
- 2002-12-04 AU AU2002353021A patent/AU2002353021A1/en not_active Abandoned
- 2002-12-04 WO PCT/US2002/038565 patent/WO2003048414A1/en not_active Application Discontinuation
- 2002-12-04 EP EP02789987A patent/EP1451387A1/en not_active Withdrawn
- 2002-12-04 JP JP2003549589A patent/JP2005511895A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2005511895A (en) | 2005-04-28 |
EP1451387A1 (en) | 2004-09-01 |
WO2003048414A1 (en) | 2003-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
AU2002343583A1 (en) | Chemical vapor deposition system | |
AU2002346665A1 (en) | Chemical vapor deposition vaporizer | |
EP1440179A4 (en) | Chemical vapor deposition system | |
GB2419896B (en) | Chemical vapor deposition reactor | |
AU2002222228A1 (en) | Chemical compounds | |
AU2001229351A1 (en) | Manufacturing medical devices by vapor deposition | |
AU2001284584A1 (en) | Chemical compounds | |
AU2003259147A1 (en) | Continuous chemical vapor deposition process and process furnace | |
AU2001262886A1 (en) | Chemical compounds | |
AU2001228638A1 (en) | Chemical compounds | |
EP1308537A3 (en) | System and method for preferential chemical vapor deposition | |
AU2002366440A1 (en) | Chemical compounds | |
MXPA03008493A (en) | Chemical compounds. | |
AU2002353021A1 (en) | Chemical vapor deposition reactor | |
AU2002242602A1 (en) | Reactor | |
AUPR353601A0 (en) | Deposition process | |
AU2002249829A1 (en) | Chemical vapor deposition devices and methods | |
AU4430600A (en) | Chemical reactor | |
AU2001255358A1 (en) | Methods for chemical vapor deposition of titanium-silicon-nitrogen films | |
AU2002309361A1 (en) | Plasma reactor | |
AU2002229553A1 (en) | Modular chemical reactor | |
AU2002332470A1 (en) | Chemical vapor deposition system | |
TW560537U (en) | Chemical vapor deposition reactor | |
AU5058401A (en) | Parallel chemical reactor | |
AU2002214365A1 (en) | Apparatus of chemical vapor deposition |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |