EP1005067A3 - Procédé de croissance d'un semiconducteur de type composé de nitrure III-V, fabrication d'un dispositif semiconducteur et dispositif semiconducteur - Google Patents
Procédé de croissance d'un semiconducteur de type composé de nitrure III-V, fabrication d'un dispositif semiconducteur et dispositif semiconducteur Download PDFInfo
- Publication number
- EP1005067A3 EP1005067A3 EP99123367A EP99123367A EP1005067A3 EP 1005067 A3 EP1005067 A3 EP 1005067A3 EP 99123367 A EP99123367 A EP 99123367A EP 99123367 A EP99123367 A EP 99123367A EP 1005067 A3 EP1005067 A3 EP 1005067A3
- Authority
- EP
- European Patent Office
- Prior art keywords
- film
- nitride
- semiconductor device
- oxide
- combination
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02378—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
- H01L21/02639—Preparation of substrate for selective deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/2054—Methods of obtaining the confinement
- H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33585198 | 1998-11-26 | ||
JP33585198A JP3470623B2 (ja) | 1998-11-26 | 1998-11-26 | 窒化物系iii−v族化合物半導体の成長方法、半導体装置の製造方法および半導体装置 |
Publications (3)
Publication Number | Publication Date |
---|---|
EP1005067A2 EP1005067A2 (fr) | 2000-05-31 |
EP1005067A3 true EP1005067A3 (fr) | 2000-10-18 |
EP1005067B1 EP1005067B1 (fr) | 2007-07-18 |
Family
ID=18293109
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP99123367A Expired - Lifetime EP1005067B1 (fr) | 1998-11-26 | 1999-11-23 | Procédé de croissance d'un semiconducteur de type composé de nitrure III-V et fabrication d'un dispositif semiconducteur |
Country Status (8)
Country | Link |
---|---|
US (1) | US6682991B1 (fr) |
EP (1) | EP1005067B1 (fr) |
JP (1) | JP3470623B2 (fr) |
KR (1) | KR100724010B1 (fr) |
CN (2) | CN1147921C (fr) |
DE (1) | DE69936564T2 (fr) |
SG (1) | SG93850A1 (fr) |
TW (1) | TW429660B (fr) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3702700B2 (ja) * | 1999-03-31 | 2005-10-05 | 豊田合成株式会社 | Iii族窒化物系化合物半導体素子及びその製造方法 |
US6812053B1 (en) | 1999-10-14 | 2004-11-02 | Cree, Inc. | Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures |
DE10056645B4 (de) * | 2000-11-09 | 2007-03-08 | Azzurro Semiconductors Ag | Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-V-N und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden |
JP2003008143A (ja) * | 2001-06-18 | 2003-01-10 | Sony Corp | マルチビーム半導体レーザ素子 |
JP4767987B2 (ja) * | 2002-12-05 | 2011-09-07 | 日本碍子株式会社 | 半導体積層構造及びiii族窒化物層群の転位低減方法 |
JP4457576B2 (ja) | 2003-05-08 | 2010-04-28 | 住友電気工業株式会社 | Iii−v族化合物結晶およびその製造方法 |
US20070184671A1 (en) * | 2003-05-30 | 2007-08-09 | Showa Denko K.K. | Method for production of group lll nitride semiconductor device |
DE10335081A1 (de) * | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip |
DE10335080A1 (de) | 2003-07-31 | 2005-03-03 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip |
CN100372138C (zh) * | 2005-07-13 | 2008-02-27 | 晶能光电(江西)有限公司 | 在硅衬底上制备铟镓铝氮材料的方法 |
US7638810B2 (en) * | 2005-09-09 | 2009-12-29 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | GaN laser with refractory metal ELOG masks for intracavity contact |
CN100362133C (zh) * | 2005-09-26 | 2008-01-16 | 中国地质大学(北京) | 一种硬质耐磨保护薄膜的制备方法 |
CN100424224C (zh) * | 2006-07-20 | 2008-10-08 | 上海交通大学 | 反应磁控溅射TiN/SiO2硬质纳米多层涂层的制备方法 |
JP4884866B2 (ja) * | 2006-07-25 | 2012-02-29 | 三菱電機株式会社 | 窒化物半導体装置の製造方法 |
US8362503B2 (en) * | 2007-03-09 | 2013-01-29 | Cree, Inc. | Thick nitride semiconductor structures with interlayer structures |
CN102163667B (zh) * | 2008-01-14 | 2014-04-16 | 晶元光电股份有限公司 | 半导体发光结构 |
KR101449035B1 (ko) * | 2008-04-30 | 2014-10-08 | 엘지이노텍 주식회사 | 반도체 발광소자 |
CN102044484A (zh) * | 2009-10-23 | 2011-05-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件上的钨塞制造方法 |
JP5370279B2 (ja) * | 2010-06-11 | 2013-12-18 | 豊田合成株式会社 | n型III族窒化物半導体の製造方法 |
CN102354659B (zh) * | 2011-11-02 | 2016-05-11 | 上海华虹宏力半导体制造有限公司 | 掩膜成核消除方法以及选择性外延生长方法 |
EP2837021A4 (fr) * | 2012-04-13 | 2016-03-23 | Tandem Sun Ab | Fabrication d'un dispositif à semi-conducteur |
CN103165779B (zh) * | 2013-02-08 | 2016-04-06 | 芜湖德豪润达光电科技有限公司 | Led半导体元件及其制造方法 |
KR102075986B1 (ko) * | 2014-02-03 | 2020-02-11 | 삼성전자주식회사 | 반도체 발광소자 |
JP2016171265A (ja) * | 2015-03-13 | 2016-09-23 | 株式会社東芝 | 半導体装置およびその製造方法 |
CN105633790A (zh) * | 2016-03-09 | 2016-06-01 | 中国科学院合肥物质科学研究院 | 一种利用GaN激光二极管泵浦稀土离子掺杂钽铌酸盐实现可见激光的方法 |
US10707308B2 (en) | 2017-12-24 | 2020-07-07 | HangZhou HaiCun Information Technology Co., Ltd. | Hetero-epitaxial output device array |
WO2021253284A1 (fr) * | 2020-06-17 | 2021-12-23 | 华为技术有限公司 | Tranche épitaxiale, puce à del et écran d'affichage |
CN112103305B (zh) * | 2020-09-21 | 2022-05-27 | 中国科学院长春光学精密机械与物理研究所 | 基于微图案化石墨烯的Micro-LED阵列及其制备方法、显示装置 |
JP2022052420A (ja) | 2020-09-23 | 2022-04-04 | セイコーエプソン株式会社 | 発光装置、発光装置の製造方法およびプロジェクター |
WO2024095458A1 (fr) * | 2022-11-04 | 2024-05-10 | 日本電信電話株式会社 | Procédé permettant de produire un dispositif à semi-conducteur |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0982819A1 (fr) * | 1998-08-27 | 2000-03-01 | Hewlett-Packard Company | Formation par épitaxie des facettes des diodes laser en materiaux III-V |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
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NL7412383A (nl) * | 1974-09-19 | 1976-03-23 | Philips Nv | Werkwijze voor het vervaardigen van een in- richting met een geleiderpatroon. |
FR2580672B1 (fr) * | 1985-04-19 | 1987-05-15 | France Etat | Procede de fabrication sur un support isolant d'un film de silicium monocristallin oriente et a defauts localises |
US5326716A (en) * | 1986-02-11 | 1994-07-05 | Max Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. | Liquid phase epitaxial process for producing three-dimensional semiconductor structures by liquid phase expitaxy |
FR2629637B1 (fr) * | 1988-04-05 | 1990-11-16 | Thomson Csf | Procede de realisation d'une alternance de couches de materiau semiconducteur monocristallin et de couches de materiau isolant |
JPH02159775A (ja) * | 1988-12-14 | 1990-06-19 | Toshiba Corp | 半導体受光素子及びその製造方法 |
FR2645345A1 (fr) * | 1989-03-31 | 1990-10-05 | Thomson Csf | Procede de modulation dirigee de la composition ou du dopage de semi-conducteurs, notamment pour la realisation de composants electroniques monolithiques de type planar, utilisation et produits correspondants |
US4971928A (en) * | 1990-01-16 | 1990-11-20 | General Motors Corporation | Method of making a light emitting semiconductor having a rear reflecting surface |
US5208167A (en) * | 1991-09-30 | 1993-05-04 | Rohm Co., Ltd. | Method for producing SOI substrate |
JPH1022568A (ja) * | 1996-07-04 | 1998-01-23 | Hitachi Ltd | 半導体装置 |
JP3925753B2 (ja) * | 1997-10-24 | 2007-06-06 | ソニー株式会社 | 半導体素子およびその製造方法ならびに半導体発光素子 |
US6271104B1 (en) * | 1998-08-10 | 2001-08-07 | Mp Technologies | Fabrication of defect free III-nitride materials |
US6255198B1 (en) * | 1998-11-24 | 2001-07-03 | North Carolina State University | Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed thereby |
-
1998
- 1998-11-26 JP JP33585198A patent/JP3470623B2/ja not_active Expired - Lifetime
-
1999
- 1999-11-19 SG SG9905771A patent/SG93850A1/en unknown
- 1999-11-19 TW TW088120266A patent/TW429660B/zh not_active IP Right Cessation
- 1999-11-23 EP EP99123367A patent/EP1005067B1/fr not_active Expired - Lifetime
- 1999-11-23 DE DE69936564T patent/DE69936564T2/de not_active Expired - Lifetime
- 1999-11-24 US US09/448,584 patent/US6682991B1/en not_active Expired - Lifetime
- 1999-11-25 KR KR1019990052590A patent/KR100724010B1/ko active IP Right Grant
- 1999-11-26 CN CNB991243889A patent/CN1147921C/zh not_active Expired - Lifetime
- 1999-11-26 CN CNB031278647A patent/CN1302519C/zh not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0982819A1 (fr) * | 1998-08-27 | 2000-03-01 | Hewlett-Packard Company | Formation par épitaxie des facettes des diodes laser en materiaux III-V |
Non-Patent Citations (6)
Title |
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BEAUMONT B ET AL: "Lateral overgrowth of GaN on patterned GaN/sapphire substrate via selective metal organic vapour phase epitaxy: a route to produce self supported GaN substrates", JOURNAL OF CRYSTAL GROWTH,NL,NORTH-HOLLAND PUBLISHING, AMSTERDAM, vol. 189-190, 15 June 1998 (1998-06-15), pages 97 - 102, XP004148483, ISSN: 0022-0248 * |
BEAUMONT B ET AL: "MAGNESIUM INDUCED CHANGES IN THE SELECTIVE GROWTH OF GAN BY METALORGANIC VAPOR PHASE EPITAXY", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 72, no. 8, 23 February 1998 (1998-02-23), pages 921 - 923, XP000742789, ISSN: 0003-6951 * |
LUTHER B P ET AL: "TITANIUM AND TITANIUM NITRIDE CONTACTS TO N-TYPE GALLIUM NITRIDE", SEMICONDUCTOR SCIENCE AND TECHNOLOGY,GB,INSTITUTE OF PHYSICS. LONDON, vol. 13, no. 11, 1 November 1998 (1998-11-01), pages 1322 - 1327, XP000783146, ISSN: 0268-1242 * |
NAKAMURA S ET AL: "INGAN/GAN/ALGAN-BASED LASER DIODES WITH MODULATION-DOPED STRAINED- LAYER SUPERLATTICES GROWN ON AN EPITAXIALLY LATERALLY OVERGROWN GAN SUBSTRATE", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 72, no. 2, 12 January 1998 (1998-01-12), pages 211 - 213, XP000735444, ISSN: 0003-6951 * |
RUVIMOV S ET AL: "MICROSTRUCTURE OF TI/AI AND TI/AI/NI/AU OHMIC CONTACTS FOR N-GAN", APPLIED PHYSICS LETTERS,US,AMERICAN INSTITUTE OF PHYSICS. NEW YORK, vol. 69, no. 11, 9 September 1996 (1996-09-09), pages 1556 - 1558, XP000628888, ISSN: 0003-6951 * |
WU Y -F ET AL: "Low resistance ohmic contact to n-GaN with a separate layer method", SOLID STATE ELECTRONICS,GB,ELSEVIER SCIENCE PUBLISHERS, BARKING, vol. 41, no. 2, 1 February 1997 (1997-02-01), pages 165 - 168, XP004033801, ISSN: 0038-1101 * |
Also Published As
Publication number | Publication date |
---|---|
EP1005067B1 (fr) | 2007-07-18 |
CN1302519C (zh) | 2007-02-28 |
JP2000164988A (ja) | 2000-06-16 |
US6682991B1 (en) | 2004-01-27 |
SG93850A1 (en) | 2003-01-21 |
TW429660B (en) | 2001-04-11 |
CN1258094A (zh) | 2000-06-28 |
CN1147921C (zh) | 2004-04-28 |
KR20000035670A (ko) | 2000-06-26 |
DE69936564T2 (de) | 2008-04-03 |
KR100724010B1 (ko) | 2007-05-31 |
CN1501444A (zh) | 2004-06-02 |
EP1005067A2 (fr) | 2000-05-31 |
JP3470623B2 (ja) | 2003-11-25 |
DE69936564D1 (de) | 2007-08-30 |
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