EP1005067A3 - Procédé de croissance d'un semiconducteur de type composé de nitrure III-V, fabrication d'un dispositif semiconducteur et dispositif semiconducteur - Google Patents

Procédé de croissance d'un semiconducteur de type composé de nitrure III-V, fabrication d'un dispositif semiconducteur et dispositif semiconducteur Download PDF

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Publication number
EP1005067A3
EP1005067A3 EP99123367A EP99123367A EP1005067A3 EP 1005067 A3 EP1005067 A3 EP 1005067A3 EP 99123367 A EP99123367 A EP 99123367A EP 99123367 A EP99123367 A EP 99123367A EP 1005067 A3 EP1005067 A3 EP 1005067A3
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EP
European Patent Office
Prior art keywords
film
nitride
semiconductor device
oxide
combination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP99123367A
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German (de)
English (en)
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EP1005067B1 (fr
EP1005067A2 (fr
Inventor
Tomonori Hino
Takeharu Asano
Tsunenori Asatsuma
Satoru Kijima
Kenji Funato
Shigetaka Tomiya
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Sony Corp
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Sony Corp
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Publication date
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Publication of EP1005067A2 publication Critical patent/EP1005067A2/fr
Publication of EP1005067A3 publication Critical patent/EP1005067A3/fr
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Publication of EP1005067B1 publication Critical patent/EP1005067B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02636—Selective deposition, e.g. simultaneous growth of mono- and non-monocrystalline semiconductor materials
    • H01L21/02639—Preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2077—Methods of obtaining the confinement using lateral bandgap control during growth, e.g. selective growth, mask induced
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Chemical Vapour Deposition (AREA)
EP99123367A 1998-11-26 1999-11-23 Procédé de croissance d'un semiconducteur de type composé de nitrure III-V et fabrication d'un dispositif semiconducteur Expired - Lifetime EP1005067B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP33585198 1998-11-26
JP33585198A JP3470623B2 (ja) 1998-11-26 1998-11-26 窒化物系ｉｉｉ−ｖ族化合物半導体の成長方法、半導体装置の製造方法および半導体装置

Publications (3)

Publication Number Publication Date
EP1005067A2 EP1005067A2 (fr) 2000-05-31
EP1005067A3 true EP1005067A3 (fr) 2000-10-18
EP1005067B1 EP1005067B1 (fr) 2007-07-18

Family

ID=18293109

Family Applications (1)

Application Number Title Priority Date Filing Date
EP99123367A Expired - Lifetime EP1005067B1 (fr) 1998-11-26 1999-11-23 Procédé de croissance d'un semiconducteur de type composé de nitrure III-V et fabrication d'un dispositif semiconducteur

Country Status (8)

Country Link
US (1) US6682991B1 (fr)
EP (1) EP1005067B1 (fr)
JP (1) JP3470623B2 (fr)
KR (1) KR100724010B1 (fr)
CN (2) CN1147921C (fr)
DE (1) DE69936564T2 (fr)
SG (1) SG93850A1 (fr)
TW (1) TW429660B (fr)

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JP3702700B2 (ja) * 1999-03-31 2005-10-05 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子及びその製造方法
US6812053B1 (en) 1999-10-14 2004-11-02 Cree, Inc. Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structures
DE10056645B4 (de) * 2000-11-09 2007-03-08 Azzurro Semiconductors Ag Verfahren zur Herstellung von rißfreien, planaren Gruppe-III-N,Gruppe III-V-N und Metall-Stickstoff Bauelementestrukturen auf Si-Substraten mittels epitaktischer Methoden
JP2003008143A (ja) * 2001-06-18 2003-01-10 Sony Corp マルチビーム半導体レーザ素子
JP4767987B2 (ja) * 2002-12-05 2011-09-07 日本碍子株式会社 半導体積層構造及びｉｉｉ族窒化物層群の転位低減方法
JP4457576B2 (ja) 2003-05-08 2010-04-28 住友電気工業株式会社 Ｉｉｉ−ｖ族化合物結晶およびその製造方法
US20070184671A1 (en) * 2003-05-30 2007-08-09 Showa Denko K.K. Method for production of group lll nitride semiconductor device
DE10335081A1 (de) * 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoeleketronischer Halbleiterchip
DE10335080A1 (de) 2003-07-31 2005-03-03 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
CN100372138C (zh) * 2005-07-13 2008-02-27 晶能光电（江西）有限公司 在硅衬底上制备铟镓铝氮材料的方法
US7638810B2 (en) * 2005-09-09 2009-12-29 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. GaN laser with refractory metal ELOG masks for intracavity contact
CN100362133C (zh) * 2005-09-26 2008-01-16 中国地质大学（北京） 一种硬质耐磨保护薄膜的制备方法
CN100424224C (zh) * 2006-07-20 2008-10-08 上海交通大学 反应磁控溅射TiN/SiO2硬质纳米多层涂层的制备方法
JP4884866B2 (ja) * 2006-07-25 2012-02-29 三菱電機株式会社 窒化物半導体装置の製造方法
US8362503B2 (en) * 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
CN102163667B (zh) * 2008-01-14 2014-04-16 晶元光电股份有限公司 半导体发光结构
KR101449035B1 (ko) * 2008-04-30 2014-10-08 엘지이노텍 주식회사 반도체 발광소자
CN102044484A (zh) * 2009-10-23 2011-05-04 中芯国际集成电路制造(上海)有限公司 半导体器件上的钨塞制造方法
JP5370279B2 (ja) * 2010-06-11 2013-12-18 豊田合成株式会社 ｎ型ＩＩＩ族窒化物半導体の製造方法
CN102354659B (zh) * 2011-11-02 2016-05-11 上海华虹宏力半导体制造有限公司 掩膜成核消除方法以及选择性外延生长方法
EP2837021A4 (fr) * 2012-04-13 2016-03-23 Tandem Sun Ab Fabrication d'un dispositif à semi-conducteur
CN103165779B (zh) * 2013-02-08 2016-04-06 芜湖德豪润达光电科技有限公司 Led半导体元件及其制造方法
KR102075986B1 (ko) * 2014-02-03 2020-02-11 삼성전자주식회사 반도체 발광소자
JP2016171265A (ja) * 2015-03-13 2016-09-23 株式会社東芝 半導体装置およびその製造方法
CN105633790A (zh) * 2016-03-09 2016-06-01 中国科学院合肥物质科学研究院 一种利用GaN激光二极管泵浦稀土离子掺杂钽铌酸盐实现可见激光的方法
US10707308B2 (en) 2017-12-24 2020-07-07 HangZhou HaiCun Information Technology Co., Ltd. Hetero-epitaxial output device array
WO2021253284A1 (fr) * 2020-06-17 2021-12-23 华为技术有限公司 Tranche épitaxiale, puce à del et écran d'affichage
CN112103305B (zh) * 2020-09-21 2022-05-27 中国科学院长春光学精密机械与物理研究所 基于微图案化石墨烯的Micro-LED阵列及其制备方法、显示装置
JP2022052420A (ja) 2020-09-23 2022-04-04 セイコーエプソン株式会社 発光装置、発光装置の製造方法およびプロジェクター
WO2024095458A1 (fr) * 2022-11-04 2024-05-10 日本電信電話株式会社 Procédé permettant de produire un dispositif à semi-conducteur

Citations (1)

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Also Published As

Publication number Publication date
EP1005067B1 (fr) 2007-07-18
CN1302519C (zh) 2007-02-28
JP2000164988A (ja) 2000-06-16
US6682991B1 (en) 2004-01-27
SG93850A1 (en) 2003-01-21
TW429660B (en) 2001-04-11
CN1258094A (zh) 2000-06-28
CN1147921C (zh) 2004-04-28
KR20000035670A (ko) 2000-06-26
DE69936564T2 (de) 2008-04-03
KR100724010B1 (ko) 2007-05-31
CN1501444A (zh) 2004-06-02
EP1005067A2 (fr) 2000-05-31
JP3470623B2 (ja) 2003-11-25
DE69936564D1 (de) 2007-08-30

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