EP0814396A3 - Circuit for generating a voltage reference - Google Patents

Circuit for generating a voltage reference Download PDF

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Publication number
EP0814396A3
EP0814396A3 EP97109351A EP97109351A EP0814396A3 EP 0814396 A3 EP0814396 A3 EP 0814396A3 EP 97109351 A EP97109351 A EP 97109351A EP 97109351 A EP97109351 A EP 97109351A EP 0814396 A3 EP0814396 A3 EP 0814396A3
Authority
EP
European Patent Office
Prior art keywords
transistor
generating
circuit
reference potential
voltage reference
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP97109351A
Other languages
German (de)
French (fr)
Other versions
EP0814396B1 (en
EP0814396A2 (en
Inventor
Stephan Weber
Udo Matter
Stefan Heinen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of EP0814396A2 publication Critical patent/EP0814396A2/en
Publication of EP0814396A3 publication Critical patent/EP0814396A3/en
Application granted granted Critical
Publication of EP0814396B1 publication Critical patent/EP0814396B1/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/22—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only
    • G05F3/222—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the bipolar type only with compensation for device parameters, e.g. Early effect, gain, manufacturing process, or external variations, e.g. temperature, loading, supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Amplifiers (AREA)

Abstract

Schaltungsanordnung zur Erzeugung eines Referenzpotentials mit einem ersten Transistor (T1), dessen Emitter mit einem Bezugspotential (M) verbunden ist und dessen Basis und Kollektor miteinander verschaltet sind,
mit einem zweiten Transistor (T2), dessen Basis mit der Basis des ersten Transistors (T1) verbunden ist,
mit einem ersten Widerstand (R1), der zwischen den Kollektor des ersten Transistors (T1) und einen Ausgangsanschluß (U) zum Abgreifen des Referenzpotentials geschaltet ist,
mit einem zweiten Widerstand (R2), der zwischen den Kollektor des zweiten Transistors (T2) und den Ausgangsanschluß (U) geschaltet ist,
mit einem dritten Widerstand (R3), der zwischen den Emitter des zweiten Transistors (T2) und das Bezugspotential (M) geschaltet ist,

Figure 00000001
Circuit arrangement for generating a reference potential with a first transistor (T1), whose emitter is connected to a reference potential (M) and whose base and collector are connected to one another,
with a second transistor (T2), the base of which is connected to the base of the first transistor (T1),
with a first resistor (R1), which is connected between the collector of the first transistor (T1) and an output terminal (U) for tapping the reference potential,
with a second resistor (R2), which is connected between the collector of the second transistor (T2) and the output terminal (U),
with a third resistor (R3), which is connected between the emitter of the second transistor (T2) and the reference potential (M),
Figure 00000001
EP97109351A 1996-06-20 1997-06-09 Circuit for generating a voltage reference Expired - Lifetime EP0814396B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19624676 1996-06-20
DE19624676A DE19624676C1 (en) 1996-06-20 1996-06-20 Circuit arrangement for generation of reference voltage

Publications (3)

Publication Number Publication Date
EP0814396A2 EP0814396A2 (en) 1997-12-29
EP0814396A3 true EP0814396A3 (en) 1998-12-09
EP0814396B1 EP0814396B1 (en) 2000-09-27

Family

ID=7797508

Family Applications (1)

Application Number Title Priority Date Filing Date
EP97109351A Expired - Lifetime EP0814396B1 (en) 1996-06-20 1997-06-09 Circuit for generating a voltage reference

Country Status (3)

Country Link
US (1) US5969566A (en)
EP (1) EP0814396B1 (en)
DE (2) DE19624676C1 (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1184769A3 (en) * 2000-08-09 2004-09-22 Mitsubishi Denki Kabushiki Kaisha Voltage generator, output circuit for error detector, and current generator
JP4212036B2 (en) * 2003-06-19 2009-01-21 ローム株式会社 Constant voltage generator
EP1501001A1 (en) * 2003-07-22 2005-01-26 STMicroelectronics Limited Bias Circuitry
JP4721726B2 (en) * 2005-02-25 2011-07-13 富士通セミコンダクター株式会社 Differential amplifier
US7893754B1 (en) * 2009-10-02 2011-02-22 Power Integrations, Inc. Temperature independent reference circuit
US8634218B2 (en) 2009-10-06 2014-01-21 Power Integrations, Inc. Monolithic AC/DC converter for generating DC supply voltage
US8310845B2 (en) 2010-02-10 2012-11-13 Power Integrations, Inc. Power supply circuit with a control terminal for different functional modes of operation
US9455621B2 (en) 2013-08-28 2016-09-27 Power Integrations, Inc. Controller IC with zero-crossing detector and capacitor discharge switching element
US9667154B2 (en) 2015-09-18 2017-05-30 Power Integrations, Inc. Demand-controlled, low standby power linear shunt regulator
US9602009B1 (en) 2015-12-08 2017-03-21 Power Integrations, Inc. Low voltage, closed loop controlled energy storage circuit
US9629218B1 (en) 2015-12-28 2017-04-18 Power Integrations, Inc. Thermal protection for LED bleeder in fault condition

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0396996A2 (en) * 1989-05-08 1990-11-14 National Semiconductor Corporation Bandgap threshold circuit with hysteresis
EP0411657A1 (en) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Constant voltage circuit
US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
EP0620515A1 (en) * 1993-04-14 1994-10-19 Texas Instruments Deutschland Gmbh Band gap reference voltage source
EP0656575A1 (en) * 1993-12-03 1995-06-07 Koninklijke Philips Electronics N.V. Band-gap reference current source with compensation for saturating current spread of bipolar transistor
US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0811203B2 (en) * 1986-05-13 1996-02-07 株式会社スギノマシン Ultra high pressure liquid ejector
JP2575702B2 (en) * 1987-05-09 1997-01-29 富士通 株式会社 Synthesizer tuner
US5013941A (en) * 1989-08-17 1991-05-07 National Semiconductor Corporation TTL to ECL/CML translator circuit
JPH03179514A (en) * 1989-11-02 1991-08-05 Toshiba Corp Constant voltage circuit
FR2672705B1 (en) * 1991-02-07 1993-06-04 Valeo Equip Electr Moteur CIRCUIT GENERATOR OF A VARIABLE REFERENCE VOLTAGE AS A FUNCTION OF THE TEMPERATURE, IN PARTICULAR FOR REGULATOR OF THE CHARGE VOLTAGE OF A BATTERY BY AN ALTERNATOR.
US5381083A (en) * 1992-07-15 1995-01-10 Sharp Kabushiki Kaisha Constant-current power-supply circuit formed on an IC
JP2953226B2 (en) * 1992-12-11 1999-09-27 株式会社デンソー Reference voltage generation circuit
FR2711258A1 (en) * 1993-10-13 1995-04-21 Philips Composants Stabilized voltage generator circuit of the bandgap type.
DE19621110C1 (en) * 1996-05-24 1997-06-12 Siemens Ag Switch-on, switch-off band-gap reference potential supply circuit

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5049806A (en) * 1988-12-28 1991-09-17 Kabushiki Kaisha Toshiba Band-gap type voltage generating circuit for an ECL circuit
EP0396996A2 (en) * 1989-05-08 1990-11-14 National Semiconductor Corporation Bandgap threshold circuit with hysteresis
EP0411657A1 (en) * 1989-08-03 1991-02-06 Kabushiki Kaisha Toshiba Constant voltage circuit
US5430395A (en) * 1992-03-02 1995-07-04 Texas Instruments Incorporated Temperature compensated constant-voltage circuit and temperature compensated constant-current circuit
EP0620515A1 (en) * 1993-04-14 1994-10-19 Texas Instruments Deutschland Gmbh Band gap reference voltage source
EP0656575A1 (en) * 1993-12-03 1995-06-07 Koninklijke Philips Electronics N.V. Band-gap reference current source with compensation for saturating current spread of bipolar transistor

Also Published As

Publication number Publication date
DE59702395D1 (en) 2000-11-02
EP0814396B1 (en) 2000-09-27
DE19624676C1 (en) 1997-10-02
EP0814396A2 (en) 1997-12-29
US5969566A (en) 1999-10-19

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