EP0802559A1 - Flaches Bildschirm mit Wasserstoffquelle - Google Patents
Flaches Bildschirm mit Wasserstoffquelle Download PDFInfo
- Publication number
- EP0802559A1 EP0802559A1 EP97410044A EP97410044A EP0802559A1 EP 0802559 A1 EP0802559 A1 EP 0802559A1 EP 97410044 A EP97410044 A EP 97410044A EP 97410044 A EP97410044 A EP 97410044A EP 0802559 A1 EP0802559 A1 EP 0802559A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- hydrogen
- source
- screen
- cathode
- anode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052739 hydrogen Inorganic materials 0.000 title claims description 55
- 239000001257 hydrogen Substances 0.000 title claims description 55
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 title claims description 49
- 230000000750 progressive effect Effects 0.000 claims abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 11
- 230000005284 excitation Effects 0.000 claims description 9
- 150000002431 hydrogen Chemical class 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 239000002243 precursor Substances 0.000 claims description 4
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- 239000000470 constituent Substances 0.000 claims description 2
- 238000002955 isolation Methods 0.000 claims description 2
- 238000000034 method Methods 0.000 claims description 2
- VAYOSLLFUXYJDT-RDTXWAMCSA-N Lysergic acid diethylamide Chemical compound C1=CC(C=2[C@H](N(C)C[C@@H](C=2)C(=O)N(CC)CC)C2)=C3C2=CNC3=C1 VAYOSLLFUXYJDT-RDTXWAMCSA-N 0.000 abstract description 4
- 150000001721 carbon Chemical class 0.000 abstract description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 abstract description 3
- 239000003086 colorant Substances 0.000 abstract description 2
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 150000004767 nitrides Chemical class 0.000 abstract 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 18
- 239000004020 conductor Substances 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- 230000008021 deposition Effects 0.000 description 5
- 230000004913 activation Effects 0.000 description 4
- 230000003078 antioxidant effect Effects 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 238000007872 degassing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003963 antioxidant agent Substances 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008929 regeneration Effects 0.000 description 2
- 238000011069 regeneration method Methods 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical class [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical class N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 238000005136 cathodoluminescence Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 150000002290 germanium Chemical class 0.000 description 1
- -1 hydrogen ions Chemical class 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/86—Vessels; Containers; Vacuum locks
- H01J29/88—Vessels; Containers; Vacuum locks provided with coatings on the walls thereof; Selection of materials for the coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/94—Selection of substances for gas fillings; Means for obtaining or maintaining the desired pressure within the tube, e.g. by gettering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30403—Field emission cathodes characterised by the emitter shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
Definitions
- the present invention relates to flat display screens, and more particularly to cathodoluminescence screens, the anode of which carries luminescent elements, separated from each other by insulating zones, and liable to be excited by electronic bombardment from microtips.
- the appended figure represents an example of a color microtip flat screen of the type to which the present invention relates.
- Such a microtip screen essentially consists of a cathode 1 with microtips 2 and a grid 3 provided with holes 4 corresponding to the locations of the microtips 2.
- the cathode 1 is placed opposite a cathodoluminescent anode 5 including a substrate of glass 6 constitutes the screen surface.
- microtip screen The operating principle and a particular embodiment of a microtip screen are described, in particular, in American patent n ° 4,940,916 of the French Atomic Energy Commission.
- the cathode 1 is organized in columns and consists, on a glass substrate 10, of cathode conductors organized in meshes from a conductive layer.
- the microtips 2 are produced on a resistive layer 11 deposited on the cathode conductors and are arranged inside the meshes defined by the cathode conductors.
- the figure partially represents the interior of a mesh and the cathode conductors do not appear in this figure.
- the cathode 1 is associated with the grid 3 organized in lines. The intersection of a line of the grid 3 and a column of the cathode 1 defines a pixel.
- This device uses the electric field which is created between the cathode 1 and the grid 3 so that electrons are extracted from the microtips 2. These electrons are then attracted by phosphor elements 7 from the anode 5 if these are suitably polarized.
- the anode 5 is provided with alternating bands of phosphor elements 7r, 7g, 7b each corresponding to a color (Red, Green, Blue). The strips are parallel to the columns of the cathode and are separated from each other by an insulator 8, generally silicon oxide (SiO 2 ).
- the phosphors 7 are deposited on electrodes 9, made up of corresponding strips of a transparent conductive layer such as indium tin oxide (ITO).
- ITO indium tin oxide
- the sets of red, green and blue bands are alternately polarized with respect to the cathode 1, so that electrons extracted from the microtips 2 of a pixel of the cathode / grid are alternately directed towards the phosphors 7 opposite each of the colors.
- the command to select the phosphor 7 (the phosphor 7g in the figure) which must be bombarded by the electrons coming from the microdots of the cathode 1 requires to selectively control the polarization of the phosphor elements 7 of the anode 5, color by color .
- the rows of the grid 3 are sequentially polarized at a potential of the order of 80 volts, while the strips of phosphor elements (for example 7g) to be excited are polarized under a voltage of the order of 400 volts via the ITO strip on which these phosphor elements are deposited.
- ITO bands, carrying the other bands of phosphor elements (for example 7r and 7b) are at low or zero potential.
- the columns of cathode 1 are brought to respective potentials between a maximum emission potential and a non-emission potential (for example, 0 and 30 volts respectively). The brightness of a color component of each of the pixels of a line is thus fixed.
- the choice of the values of the polarization potentials is linked to the characteristics of the phosphors 7 and of the microtips 2. Conventionally, below a potential difference of 50 volts between the cathode and the grid, there is no electronic emission. , and the maximum emission used corresponds to a potential difference of 80 volts.
- a disadvantage of conventional screens is that the microtips gradually lose their emissivity. This phenomenon can be seen by measuring the current in the cathode conductors. This results in a gradual decrease in the brightness of the screen, which adversely affects the life of conventional screens.
- the present invention aims to overcome this drawback by making the emissive power of the microtips substantially constant.
- the present invention also aims to propose a screen with automatic regulation of the emitting power of the microtips.
- the present invention further aims to propose a method for producing a screen, the microtips of which have a substantially constant emissive power without modifying either the structure of the screen or the means of controlling the screen.
- the present invention provides a flat display screen comprising a microtip cathode of electron bombardment of an anode provided with phosphor elements, the anode and the cathode being separated by a vacuum space, containing a source to gradual release of hydrogen.
- the source of hydrogen consists of a thin layer deposit of a hydrogenated material.
- the source of hydrogen consists of a resistive layer of the cathode on which the microtips are arranged.
- the source of hydrogen consists of isolation bands separating bands of phosphor elements from the anode.
- the source of hydrogen is produced on the periphery of the active area of the anode carrying the phosphors, a source of excitation of said source of hydrogen being produced, cathode side, opposite of said hydrogen source.
- the present invention also provides a method of manufacturing a flat display screen, comprising the step of hydrogenating at least one of the constituent layers formed inside this screen.
- the hydrogenated layer is obtained by chemical vapor deposition assisted by plasma from at least one precursor enriched in hydrogen.
- the present invention originates from an interpretation of the phenomena which give rise to the abovementioned problems in conventional screens.
- the inventors consider that these problems are due, in particular to an oxidation of the microdots of the cathode.
- the surface layers of the anode are, from a chemical point of view, oxides, whether they are the phosphors 7 or the insulator 8.
- the microtips are generally metallic , for example molybdenum (Mo).
- the oxide layers tend to shrink under the effect of electron bombardment, i.e. to release oxygen which oxidizes the surface of the microtips which then lose their emissive power.
- the present invention proposes to control this oxidation phenomenon of the cathode microtips by introducing into the inter-electrode space of the screen, a partial pressure of hydrogen.
- the most negative potential consists of the metallic cathode material and the H + or H 2 + ions are therefore attracted by the microtips to reduce them if they are oxidized.
- these H + or H 2 + ions are repelled by the anode and do not risk damaging the phosphor elements.
- the water vapor (H 2 O) formed by the recombination of the H + or H 2 + ions is then trapped by an element for trapping impurities, generally called a "getter", communicating with the inter-electrode space.
- a microtip screen is generally provided with an element for trapping impurities whose role is to absorb various pollutions resulting from the degassing of the layers of the screen in contact with the vacuum.
- this getter does not succeed in effectively trapping the oxygen degassed by the phosphors 7 and the insulating layers 8 insofar as these degassings are carried out essentially in a positive ionic form (O 2 + ) which then finds itself attracted to the microtips before it can be trapped by the getter.
- the water vapor obtained by the reduction of oxygen by hydrogen ions constitutes a neutral molecule which is then no longer attracted by the microtips and can be trapped by the getter.
- the partial pressure of hydrogen should not, however, be too high so as not to affect the operation of the screen.
- the presence of hydrogen in the vicinity of the microtips generates the formation of a microplasma of hydrogen in the vicinity of the microtips.
- This plasma must remain at a sufficiently low pressure and be located around the tips to do not disturb the operation of the screen. In particular, if this plasma develops, there is a risk of an arc appearing between the anode and the cathode of the screen.
- the partial pressure of hydrogen is according to the invention chosen as a function of the inter-electrode distance and the quality of the vacuum in the screen, in particular, of the partial pressure of the oxidizing species all combined.
- a partial hydrogen pressure of 5.10 -4 millibars (5 10 -2 Pa) constitutes a limit pressure for an inter-electrode distance of approximately 0.2 min.
- the partial pressure of hydrogen must be maintained at the chosen level even when the hydrogen is consumed and trapped by the getter.
- a characteristic of the present invention is to provide, inside the inter-electrode space, a source of hydrogen which gradually releases H + ions as the screen operates, ie progressively degassing of oxidizing species from the anode.
- this source is arranged near the tips, so that the released hydrogen is not trapped by the getter before reaching the microtips.
- the source material must be able to release hydrogen only under excitation.
- This excitation can be thermal. In this case, the temperature rise inside the screen during its operation causes a release of hydrogen. This excitation can also result from an electronic or ionic bombardment.
- the hydrogen source is integrated in the insulating strips 8 which separate the strips of phosphor elements from the anode.
- the activation of the hydrogen source takes place essentially by electron bombardment.
- some electrons emitted by the microtips touch the edges of the insulating tracks.
- the hydrogen source is produced on the cathode side and is for example integrated into the resistive layer which supports the microtips. The activation of the source is then thermal, the cathode not being bombarded.
- a common advantage of the two embodiments described above is that they distribute the source of hydrogen over the entire surface of the screen and thus guarantee a homogeneous antioxidant effect in the screen.
- Another advantage is that they allow automatic regulation of the partial pressure of hydrogen in the inter-electrode space, therefore of the antioxidant means of the microtips of the cathode. Indeed, the activation (thermal or by electron bombardment) of the hydrogen source is localized in the region of the microtips which emit and which are therefore liable to be oxidized.
- Another advantage is that they do not require any modification of the structure of the screen, but only of the conditions of deposition of the insulating tracks 8 or of the resistive layer 11, as will be seen below.
- the deposition parameters of at least one layer chosen are adjusted to cause the incorporation of hydrogen into the material of this layer.
- the hydrogen diffusion incorporation is adjusted as a function of the quantity of hydrogen which it is desired to see released by the material during the operation of the screen, that is to say as a function of the quality of the vacuum in the inter-electrode space, in particular the partial pressure of the oxidizing species, and the excitation means chosen for the hydrogen source.
- the hydrogen source consists of dedicated zones, arranged outside the active zone of the screen, for example, at the periphery of the anode. An excitation source is then produced on the cathode side opposite of these dedicated areas.
- the excitation source may consist of a microtip zone opposite the hydrogen source outside the active zone of the screen.
- the dedicated excitation source can be controlled at regular intervals to cause regeneration of the microtips. It can also be provided that this dedicated source is controlled from a measurement of the current flowing in the cathode conductors to cause a phase of regeneration of the microtips as a function of a current threshold from which it is considered desirable. to regenerate the microtips.
- the various layers used in the manufacture of a screen are generally deposited by a plasma assisted chemical vapor deposition (PECVD).
- PECVD plasma assisted chemical vapor deposition
- Such a deposition method uses mixtures of precursor compounds of the material to be deposited. It is easy to control the content of hydrogen added to the precursors. This technique makes it possible to obtain highly hydrogenated deposits and to easily control the quantity of hydrogen by varying the deposition parameters (deposition temperature, self-biasing voltage, deposition pressure, annealing temperature, etc.).
- the choice of material used depends, in particular, on the location of the hydrogen source.
- the hydrogen source is produced on the cathode side, it will be possible to hydrogenate the silicon usually constituting the resistive layer 11 which dispenses hydrogen.
- the hydrogen source consists of the insulating strips 8 between the strips of phosphor elements of the anode
- a material will be chosen which is both dielectric and easily hydrogenable, for example, silicon carbide or silicon oxide.
- silicon nitride which also has the advantage of minimizing the oxygen contained in the insulating strips so that the hydrogen released has the task of reducing the oxidizing species degassed essentially by the phosphor elements.
- an amorphous compound When this is compatible with the role of the layer chosen to also constitute the source of hydrogen, an amorphous compound will preferably be chosen insofar as it can generate a large quantity of hydrogen since its concentration is not limited by a crystal structure.
- the invention has been described above in relation to a color microtip screen, it also applies to a monochrome screen. If the anode of such a monochrome screen consists of two sets of alternating bands of phosphor elements, all the embodiments described above can be implemented. On the other hand, if the anode of the monochrome screen consists of a phosphor plane, the hydrogen source will be constituted either by a dedicated source external to the active area of the screen, or by the resistive layer on the cathode side. .
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Vessels, Lead-In Wires, Accessory Apparatuses For Cathode-Ray Tubes (AREA)
- Manufacture Of Electron Tubes, Discharge Lamp Vessels, Lead-In Wires, And The Like (AREA)
- Electrodes For Cathode-Ray Tubes (AREA)
- Cold Cathode And The Manufacture (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9605121 | 1996-04-18 | ||
FR9605121A FR2747839B1 (fr) | 1996-04-18 | 1996-04-18 | Ecran plat de visualisation a source d'hydrogene |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0802559A1 true EP0802559A1 (de) | 1997-10-22 |
EP0802559B1 EP0802559B1 (de) | 2001-12-05 |
Family
ID=9491513
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP97410044A Revoked EP0802559B1 (de) | 1996-04-18 | 1997-04-15 | Flacher Bildschirm mit Wasserstoffquelle |
Country Status (5)
Country | Link |
---|---|
US (1) | US5907215A (de) |
EP (1) | EP0802559B1 (de) |
JP (1) | JPH1055770A (de) |
DE (1) | DE69708739T2 (de) |
FR (1) | FR2747839B1 (de) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0836217A1 (de) * | 1996-10-14 | 1998-04-15 | Hamamatsu Photonics K.K. | Elektronenröhre |
FR2781602A1 (fr) * | 1998-07-21 | 2000-01-28 | Futaba Denshi Kogyo Kk | Dispositif electronique a cathode froide, et dispositif lumineux a emission de champ et dispositif lumineux a cathode froide comportant chacun celui-ci |
WO2001089054A2 (en) * | 2000-05-17 | 2001-11-22 | Motorola, Inc. | Field emission device having metal hydride source |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100288549B1 (ko) * | 1997-08-13 | 2001-06-01 | 정선종 | 전계방출디스플레이 |
JP3481142B2 (ja) * | 1998-07-07 | 2003-12-22 | 富士通株式会社 | ガス放電表示デバイス |
US20200357597A1 (en) * | 2018-01-31 | 2020-11-12 | Nano-X Imaging Ltd. | Cold cathode x-ray tube and control method therefor |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR884289A (fr) * | 1941-07-22 | 1943-08-09 | Licentia Gmbh | Tube de braun |
US3432712A (en) * | 1966-11-17 | 1969-03-11 | Sylvania Electric Prod | Cathode ray tube having a perforated electrode for releasing a selected gas sorbed therein |
US3552818A (en) * | 1966-11-17 | 1971-01-05 | Sylvania Electric Prod | Method for processing a cathode ray tube having improved life |
DE2141145A1 (de) * | 1971-08-12 | 1973-02-15 | Energy Sciences Inc | Verfahren und vorrichtung zum erzeugen von elektronen |
US3945698A (en) * | 1973-10-05 | 1976-03-23 | Hitachi, Ltd. | Method of stabilizing emitted electron beam in field emission electron gun |
WO1996001492A1 (en) * | 1994-07-01 | 1996-01-18 | Saes Getters S.P.A. | Method for creating and keeping a controlled atmosphere in a field emitter device by using a getter material |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2623013A1 (fr) * | 1987-11-06 | 1989-05-12 | Commissariat Energie Atomique | Source d'electrons a cathodes emissives a micropointes et dispositif de visualisation par cathodoluminescence excitee par emission de champ,utilisant cette source |
US5144191A (en) * | 1991-06-12 | 1992-09-01 | Mcnc | Horizontal microelectronic field emission devices |
JP3252545B2 (ja) * | 1993-07-21 | 2002-02-04 | ソニー株式会社 | 電界放出型カソードを用いたフラットディスプレイ |
KR950034365A (ko) * | 1994-05-24 | 1995-12-28 | 윌리엄 이. 힐러 | 평판 디스플레이의 애노드 플레이트 및 이의 제조 방법 |
US5714837A (en) * | 1994-12-09 | 1998-02-03 | Zurn; Shayne Matthew | Vertical field emission devices and methods of fabrication with applications to flat panel displays |
US5684356A (en) * | 1996-03-29 | 1997-11-04 | Texas Instruments Incorporated | Hydrogen-rich, low dielectric constant gate insulator for field emission device |
-
1996
- 1996-04-18 FR FR9605121A patent/FR2747839B1/fr not_active Expired - Fee Related
-
1997
- 1997-04-15 DE DE69708739T patent/DE69708739T2/de not_active Revoked
- 1997-04-15 EP EP97410044A patent/EP0802559B1/de not_active Revoked
- 1997-04-17 JP JP9100127A patent/JPH1055770A/ja active Pending
- 1997-04-17 US US08/837,354 patent/US5907215A/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR884289A (fr) * | 1941-07-22 | 1943-08-09 | Licentia Gmbh | Tube de braun |
US3432712A (en) * | 1966-11-17 | 1969-03-11 | Sylvania Electric Prod | Cathode ray tube having a perforated electrode for releasing a selected gas sorbed therein |
US3552818A (en) * | 1966-11-17 | 1971-01-05 | Sylvania Electric Prod | Method for processing a cathode ray tube having improved life |
DE2141145A1 (de) * | 1971-08-12 | 1973-02-15 | Energy Sciences Inc | Verfahren und vorrichtung zum erzeugen von elektronen |
US3945698A (en) * | 1973-10-05 | 1976-03-23 | Hitachi, Ltd. | Method of stabilizing emitted electron beam in field emission electron gun |
WO1996001492A1 (en) * | 1994-07-01 | 1996-01-18 | Saes Getters S.P.A. | Method for creating and keeping a controlled atmosphere in a field emitter device by using a getter material |
Non-Patent Citations (1)
Title |
---|
SCHWOEBEL P R ET AL: "FIELD-EMITTER ARRAY PERFORMANCE ENHANCEMENT USING HYDROGEN GLOW DISCHARGES", 5 July 1993, APPLIED PHYSICS LETTERS, VOL. 63, NR. 1, PAGE(S) 33 - 35, XP000382555 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0836217A1 (de) * | 1996-10-14 | 1998-04-15 | Hamamatsu Photonics K.K. | Elektronenröhre |
US5959400A (en) * | 1996-10-14 | 1999-09-28 | Hamamatsu Photonics K.K. | Electron tube having a diamond field emitter |
FR2781602A1 (fr) * | 1998-07-21 | 2000-01-28 | Futaba Denshi Kogyo Kk | Dispositif electronique a cathode froide, et dispositif lumineux a emission de champ et dispositif lumineux a cathode froide comportant chacun celui-ci |
WO2001089054A2 (en) * | 2000-05-17 | 2001-11-22 | Motorola, Inc. | Field emission device having metal hydride source |
WO2001089054A3 (en) * | 2000-05-17 | 2002-03-28 | Motorola Inc | Field emission device having metal hydride source |
Also Published As
Publication number | Publication date |
---|---|
FR2747839B1 (fr) | 1998-07-03 |
EP0802559B1 (de) | 2001-12-05 |
DE69708739D1 (de) | 2002-01-17 |
JPH1055770A (ja) | 1998-02-24 |
FR2747839A1 (fr) | 1997-10-24 |
US5907215A (en) | 1999-05-25 |
DE69708739T2 (de) | 2002-07-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0558393A1 (de) | Elektronenquelle mit Mikropunktkathoden und Anzeigevorrichtung mit Kathodolumineszenz erregt durch Feldemission unter Anwendung dieser Quelle | |
US5772485A (en) | Method of making a hydrogen-rich, low dielectric constant gate insulator for field emission device | |
KR101000827B1 (ko) | 전자방출소자 및 그것을 이용한 전자원 및 화상표시장치 및정보 표시 재생장치 | |
FR2724940A1 (fr) | Luminophore et dispositif d'affichage fluorescent | |
KR100618531B1 (ko) | 전자방출소자, 전자원 및 다이폴층을 가진 화상표시장치 | |
EP0802559B1 (de) | Flacher Bildschirm mit Wasserstoffquelle | |
FR2760755A1 (fr) | Luminophore et dispositif d'affichage | |
EP0893817B1 (de) | Ionenpumpen eines flachen Mikrospitzen-Schirms | |
FR2803087A1 (fr) | Cathode a emission par champ electrique, dispositif d'emission electronique et son procede de fabrication | |
EP0943153A1 (de) | Ein durch einen mikrospitzen-träger beobachtbares, mit einer mikrospitzen-elektronenquelle versehenes bildschirm und verfahren zur herstellung dieser quelle | |
FR2748347A1 (fr) | Anode d'ecran plat de visualisation a anneau de protection | |
EP0806787B1 (de) | Herstellung einer Anode eines flachen Bildschirms | |
EP1200973B1 (de) | Oxidkathode und zugehöriges herstellungsverfahren | |
FR2756418A1 (fr) | Ecran plat de visualisation a deviation laterale | |
FR2798508A1 (fr) | Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ | |
FR2765391A1 (fr) | Dispositif d'affichage a cathodes a emission de champ | |
EP0877407A1 (de) | Anode eines flachen Bildschirms | |
FR2784225A1 (fr) | Source d'electrons a cathodes emissives comportant au moins une electrode de protection contre des emissions parasites | |
FR2797092A1 (fr) | Procede de fabrication d'une anode d'un ecran plat de visualisation | |
FR2713823A1 (fr) | Collecteur d'électrons comportant des bandes conductrices commandables indépendamment. | |
FR2809862A1 (fr) | Ecran plat de visualisation a memoire d'adressage | |
FR2798507A1 (fr) | Dispositif permettant de produire un champ electrique module au niveau d'une electrode et son application aux ecrans plats a emission de champ | |
CA2312845A1 (en) | Self-gettering electron field emitter and fabrication process | |
KR20020057638A (ko) | 전계방출형 표시소자 및 그 제조방법 | |
FR2788879A1 (fr) | Ecran a emission de champ equipe de microcanaux |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): DE FR GB IT |
|
17P | Request for examination filed |
Effective date: 19980406 |
|
111Z | Information provided on other rights and legal means of execution |
Free format text: DE FR GB IT |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
17Q | First examination report despatched |
Effective date: 20010205 |
|
GRAG | Despatch of communication of intention to grant |
Free format text: ORIGINAL CODE: EPIDOS AGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAH | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOS IGRA |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): DE FR GB IT |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: IF02 |
|
REF | Corresponds to: |
Ref document number: 69708739 Country of ref document: DE Date of ref document: 20020117 |
|
GBT | Gb: translation of ep patent filed (gb section 77(6)(a)/1977) |
Effective date: 20020314 |
|
PLBQ | Unpublished change to opponent data |
Free format text: ORIGINAL CODE: EPIDOS OPPO |
|
PLBI | Opposition filed |
Free format text: ORIGINAL CODE: 0009260 |
|
PLBF | Reply of patent proprietor to notice(s) of opposition |
Free format text: ORIGINAL CODE: EPIDOS OBSO |
|
26 | Opposition filed |
Opponent name: CANON INC. Effective date: 20020905 |
|
29U | Proceedings interrupted after grant according to rule 142 epc |
Effective date: 20020621 |
|
29U | Proceedings interrupted after grant according to rule 142 epc |
Effective date: 20020906 |
|
29W | Proceedings resumed after grant [after interruption of proceedings according to rule 142 epc] |
Effective date: 20050502 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20050412 Year of fee payment: 9 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20050427 Year of fee payment: 9 Ref country code: DE Payment date: 20050427 Year of fee payment: 9 |
|
PLAX | Notice of opposition and request to file observation + time limit sent |
Free format text: ORIGINAL CODE: EPIDOSNOBS2 |
|
PLBB | Reply of patent proprietor to notice(s) of opposition received |
Free format text: ORIGINAL CODE: EPIDOSNOBS3 |
|
RDAF | Communication despatched that patent is revoked |
Free format text: ORIGINAL CODE: EPIDOSNREV1 |
|
RDAG | Patent revoked |
Free format text: ORIGINAL CODE: 0009271 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: PATENT REVOKED |
|
27W | Patent revoked |
Effective date: 20051202 |
|
GBPR | Gb: patent revoked under art. 102 of the ep convention designating the uk as contracting state |
Free format text: 20051202 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: IT Payment date: 20060430 Year of fee payment: 10 |