EP0696045A1 - Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand - Google Patents

Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand Download PDF

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Publication number
EP0696045A1
EP0696045A1 EP95410079A EP95410079A EP0696045A1 EP 0696045 A1 EP0696045 A1 EP 0696045A1 EP 95410079 A EP95410079 A EP 95410079A EP 95410079 A EP95410079 A EP 95410079A EP 0696045 A1 EP0696045 A1 EP 0696045A1
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EP
European Patent Office
Prior art keywords
cathode
layer
grid
microtip
conductors
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Granted
Application number
EP95410079A
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English (en)
French (fr)
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EP0696045B1 (de
Inventor
Jean-Frédéric Clerc
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Pixtech SA
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Pixel International SA
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/30—Cold cathodes, e.g. field-emissive cathode
    • H01J1/304—Field-emissive cathodes
    • H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2329/00—Electron emission display panels, e.g. field emission display panels

Definitions

  • the present invention relates to the production of a microtip cathode. It applies more particularly to the production of a microtip cathode of a flat display screen.
  • FIG. 1 represents the structure of a flat screen with microtips of the type to which the invention relates.
  • Such a microtip screen essentially consists of a cathode 1 with microtips 2 and a grid 3 provided with holes 4 corresponding to the locations of the microtips 2.
  • the cathode 1 is placed opposite a cathodoluminescent anode 5 including a substrate of glass 6 constitutes the screen surface.
  • the cathode conductors are arranged in columns on a glass substrate 10.
  • the microtips 2 are produced on a resistive layer 11 deposited on the cathode conductors and are conventionally arranged inside meshes defined by the cathode conductors.
  • FIG. 1 partially represents the interior of a mesh, the cathode conductors do not appear in this figure.
  • the cathode 1 is associated with the grid 3 which is organized in lines. The intersection of a line of the grid 3 and a column of the cathode 1 defines a pixel.
  • This device uses the electric field created between the cathode 1 and the grid 3 so that electrons are extracted from the microtips 2 towards phosphor elements 7 of the anode 5.
  • the anode 5 is provided with alternating strips of phosphor elements 7, each corresponding to a color (Blue, Red, Green). The strips are separated from each other by an insulator 8.
  • the phosphor elements 7 are deposited on electrodes 9, consisting of corresponding strips of a transparent conductive layer such as indium tin oxide (ITO) .
  • ITO indium tin oxide
  • the sets of blue, red and green bands are alternately polarized with respect to the cathode 1, so that the electrons extracted from the microtips 2 of a pixel of the cathode / grid are alternately directed towards the phosphor elements 7 opposite each other colours.
  • FIGS. 2A to 2D illustrate an example of a structure of this type, FIGS. 2B and 2D being respectively enlargements of parts of FIGS. 2A and 2C.
  • Several microtips 2, for example sixteen, are arranged in each mesh 12 defined by the cathode conductors 13 (FIG. 2B).
  • the cathode 1 is generally made up of layers deposited successively on the glass substrate 10.
  • FIGS. 2C and 2D partially represent a sectional view along the line AA 'in FIG. 2B.
  • a conductive layer 13, for example made of niobium, is deposited on the substrate 10. This layer 13 is etched in a pattern of columns 15, each column having meshes 12 surrounded by cathode conductors 13.
  • a resistive layer 11 is then deposited on these cathode conductors 13.
  • This resistive layer 11, for example made of amorphous silicon doped with phosphorus, has the object of protecting each microtip 2 against an excess of current when starting a microtip 2.
  • the affixing of such a resistive layer 11 aims at homogenizing the electronic emission of the microtips 2 of a cathode 1 pixel and thus increase its lifespan.
  • the grid 3 is formed of a conductive layer, for example of niobium.
  • Holes 4 and wells 17 are respectively made in layers 3 and 16 to receive the microtips 2 which are for example made of molybdenum.
  • the deposition of the microtips 2 in the wells 17 is conventionally obtained by spraying molybdenum onto an uplift elimination layer affixed to the grid 3.
  • a drawback of conventional techniques is that, if the resistive layer makes it possible to protect the microtips against an excess of current, it does not manage to completely homogenize the electronic emission. In fact, the microtips of a mesh are not all equidistant from the cathode conductors, which results in non-uniformity of the electronic emission.
  • Another drawback lies in the need to form in each of the columns of the cathode, conductive meshes. This requires the production of a complex pattern over the entire surface of the cathode.
  • the small diameter of the microtips (of the order of 1 to 2 ⁇ m) and the need to reproduce them with a high density per pixel of the screen (several thousand per pixel) means that the existing processes limit the surface of the flat screens that can be produced.
  • the disparities that can appearing in the regularity of the diameter of the holes and wells intended to receive the microtips also harm the homogeneity of the electronic emission, by causing disparities in the diameter and the height of the microtips.
  • the object of the present invention is to overcome these drawbacks by proposing a microtip cathode providing electronic radiation of optimized homogeneity.
  • the invention also aims to avoid the recourse to the formation of meshes of cathode conductors.
  • the present invention provides a microtip cathode for a flat display screen, of the type comprising a substrate, at least one cathode conductor, and microtips arranged on a resistive layer; said cathode conductor being disposed above the resistive layer, and having circular openings in the center of each of which is arranged a microtip.
  • the diameter of the circular openings presented by the cathode conductor is greater than the diameter of the base of a microtip.
  • the cathode is associated with a grid, separated from the cathode conductor by an insulation layer and provided with a hole plumb with each microtip; the insulation layer and the cathode conductor having a well for receiving a microtip perpendicular to each hole of the grid; and the diameter of the grid holes being substantially less than the diameter of the wells of the insulation and cathode conductor layers.
  • the cathode comprises an auxiliary insulating layer, between the cathode conductor and the insulation layer.
  • the invention also relates to a method for producing a microtip cathode which consists in producing, on a stack consisting at least of a substrate, a resistive layer, a cathode conductor layer, an insulation layer and a grid layer, an anisotropic etching of holes in the grid layer , and a corresponding etching of wells of larger section, in the insulation and cathode conductor layers.
  • the second phase of photolithography of circular patterns is carried out by depositing a layer of resin on the layer of grid, and by insulating this resin layer, after a deposit of microbeads calibrated opaque for the radiation of sunshine.
  • a step of pre-exposure of the resin layer is carried out, prior to the step of depositing the microbeads, by masking of lines of the grid.
  • the access resistance between the cathode and each of the microtips is constant since it corresponds to an annular resistive region of constant dimensions.
  • the cathode 1, according to the invention, as shown in FIGS. 3A and 3B, comprises from an insulating substrate 10, a resistive layer 11 supporting microtips 2.
  • Cathode conductors 13 are arranged on the resistive layer 11 with possible interposition of a thin conductive layer 19 of adhesion and etching stop. These cathode conductors 13 are organized in columns, each of which has a large number of microtips in its width and in its length, FIG. 3A representing only a small portion of a column. In other words, the cathode conductors 13 are continuous on all the columns 15.
  • Microtips 2 are disposed on the resistive layer 11 at the center of circular openings 17 that each cathode conductor has 13.
  • Each circular opening 17 defines between the microtip 2 that it receives and the cathode conductor 13, an annular resistive region by through the layer 11.
  • all the microtips 2 of the cathode conductor 13 will be electrically separated from the latter, by a resistive region of the same value, provided that the diameter of the circular openings 17 is the same.
  • the diameter of these circular openings 17 is greater than the diameter of the bases of the microtips 2.
  • All the microtips 2 are therefore electrically separated from the cathode conductors 13 by a resistor of the same value. This is an essential characteristic of the present invention which leads to optimizing the homogeneity of the cathode radiation, by making the current in the microtips 2 homogeneous.
  • the cathode 1 is associated with a control grid 3.
  • the cathode conductors 13 are then isolated from the grid 3 by means of an insulation layer 16, possibly associated with an auxiliary insulating layer 18.
  • This auxiliary insulating layer 18 is, when provided, disposed between the cathode conductor 13 and the insulating layer 16. It makes it possible to eliminate the effects of "needle holes" that may have the insulating layer 16 perpendicular to the surface of the cathode conductors 13.
  • Holes 4 and wells 17 are made in the grid 3, insulation 16 and cathode conductor 13 layers (and if necessary in the auxiliary insulating layer 18) to receive the microtips 2.
  • a characteristic of these holes 4 and well 17 is that the wells 17 in the insulation layers 16 (and 18) and the cathode conductor 13 have a diameter substantially greater than the holes 4 in the grid layer 3.
  • Microtips 2 are deposited, on the thin conductive layer 19, if it exists, directly above the holes 4, and this layer 19 is open around each microtip 2, in its free surface. Thus, each microtip 2 is laterally separated from the layer of cathode conductors 13 by a ring of width corresponding approximately to the difference between the diameter of the wells 17 and the holes 4. If the thin conductive layer 19 is not used, the microtips 2 are found directly on the resistive layer 11, and are always separated annularly from the cathode conductors 13.
  • the cathode conductors 13 have a width of approximately 300 ⁇ m, corresponding to the width of a screen pixel, defined by the intersection of a line 14 of the grid 3 and of a column 15 of the cathode 1.
  • the diameter of the holes 4 is 1.3 ⁇ m, that of the wells 17 2.6 ⁇ m, and the diameter of each microtip 2 is at the base of 1.1 ⁇ m.
  • This method can be implemented in three phases corresponding respectively to the production of cathode conductors 13, to the formation of patterns at the future locations of the microtips in grid lines 3, and to the production of grid 3 and microtips 2.
  • FIGS. 4A to 4H illustrate the implementation of the first phase which corresponds to the production of the cathode conductors 13.
  • a resistive layer 11 is deposited on the substrate 10.
  • a second step (FIG. 4B) consists in depositing a thin conductive layer 19, called an etching stop.
  • the role of this layer 19 is twofold. On the one hand, it constitutes an attachment surface for the next layer (FIG. 4C) and microtips. On the other hand, it ensures an etching stop of the layer of cathode conductors 13. This second role will be better understood later, in relation to the description of FIGS. 4E, and 6A to 6C.
  • a third step (FIG. 4C) consists in depositing a conductive layer 13. The attachment of this layer 13 is favored by the layer 19.
  • a fourth possible step consists (FIG. 4D) in carrying out an oxidation of the conductive layer 13, in order to obtain, in the thickness of this layer 13, an auxiliary insulating layer 18.
  • the layer 13 previously deposited is then chosen to have the characteristic of being oxidizable. It will also be ensured that the thickness of the layer 13, deposited during the third step, is sufficient to allow obtaining an auxiliary insulating layer 18 while retaining a sufficient thickness for the cathode conductors 13.
  • the cathode conductors 13 are etched in columns.
  • the layer 19 ensures, during this step, an etching stop which avoids attacking the resistive layer 11.
  • the cathode conductors 13 have, for example, a width of the order of 300 ⁇ m.
  • a sixth step (FIG. 4F) the layer 19 is eliminated at the places where the layers 13 and 18 have been etched, that is to say between the columns 15 of cathode conductors 13.
  • an insulator 16 is deposited on the structure resulting from the first phase.
  • a conductive layer of grid 3 is deposited. This deposit is for example obtained in the same way as the deposit of the layer of cathode conductors 13.
  • the structure thus obtained according to the invention differs from previous techniques, in particular by the fact that the conductive layer 13 is no longer etched in a pattern of mesh columns, but that the cathode conductors 13 are continuous across an entire column 15.
  • the resistive layer 11 is affixed before the conductive layer 13, which allows the formation of an auxiliary insulating layer 18 by oxidation of this conductive layer 13.
  • FIGS. 5A to 5C illustrate a second phase of the method for producing a microtip cathode according to the invention, corresponding to a phase for delimiting lines of grid and pattern formation at future locations of the microtips in grid lines 3.
  • the layers 13, 18, and 19 of the stack resulting from the first phase have been designated, in FIGS. 5A to 5C , by the common reference 15 corresponding to their layout in column.
  • This second phase uses photolithography of circular patterns to define the future locations of the microtips, that is to say holes 4 in grid lines 3.
  • a layer of photosensitive resin 20 of negative type is applied to the conductive layer 3.
  • any conventional photolithography process can be implemented to define in the layer 20 the circular patterns as well as the lines of the grid 3.
  • the width of the lines of the grid is, for example, of the order of 300 ⁇ m.
  • the diameter of a circular pattern has a given value, for example between 1 and 2 ⁇ m, and the number of patterns is several thousand per screen pixel.
  • the resin layer 20 is pre-insulated through a conventional mask 21 for defining the lines 14 of the grid 3.
  • microbeads 22 are deposited on the resin layer 20.
  • These microbeads 22 are for example microbeads of glass or plastic. They are opaque to sunshine to obtain a maximum masking effect on the areas on which they are deposited.
  • the distribution of the microbeads 22 on the resin layer 20 is random. We have indeed seen that the quality of a screen was linked to the regularity of the density microdots 2 from one pixel of the screen to another and to the regularity of the diameter of the microdots 2. On the other hand, the difference between two microdots 2 has no influence on the quality of the screen provided that the density of microtips is high.
  • the random distribution of the patterns in the grid layer 3 has no consequence on the quality of the screen. It was thus found that a good quality flat screen was obtained with a number and a diameter of circular patterns in each pixel of the screen which are the same to within five percent, the density of patterns of a pixel being high so as not to affect the brightness of the screen.
  • a deposit of calibrated microbeads 22 with a given diameter of between 1 and 5 ⁇ m with a tolerance of 10 percent for the diameter of microbeads 22 achieves this result.
  • microbeads 22 deposited on the layer 20 it is possible, according to the invention, to use several methods of depositing the microbeads 22.
  • a first method consists in immersing the stack resulting from the first phase, coated with the resin layer 20, in a bath containing microbeads 22 in solution.
  • the density of the microbeads 22 in the bath is fixed as a function of the density of patterns desired.
  • the microbeads 22 are deposited by decantation, the microbeads used in this case being made of glass. It is also possible to carry out the insolation step through the bath as soon as the microbeads 22 have decanted, which accelerates the execution of the process.
  • the evacuation of the microbeads 22, after insolation is carried out here simply by removing the stack and its possible support from the bath.
  • a second method consists in spraying, on the resin layer 20, a mixture of solvent and microbeads 22 contained in a tank.
  • the solvent is alcohol-based, which allows it to evaporate during spraying.
  • the distribution of the microbeads 22 on the resin layer 20 has good homogeneity, the density of microbeads 22 being fixed by the duration of the spraying carried out.
  • the microbeads 22 hold on the resin layer 20 by electrostatic effect, resulting from charges acquired during their passage of air between a nozzle of the sprayer and the resin layer 20.
  • the evacuation of the microbeads 22 after insolation can be made by blowing or any other means.
  • a third method consists in embedding microbeads 22 in a viscous material, for example polyvinyl alcohol.
  • the resin layer 20 is covered with a layer of this material, for example by scraping or by screen printing without a pattern.
  • the polyvinyl alcohol is then dried and then exposed as described below. Subsequently, the polyvinyl alcohol is dissolved, for example in water and the microbeads 22 are removed at the same time.
  • this resin layer 20 is exposed by means of a quasi-parallel light insulator during a fourth step (not shown).
  • the wavelength of the radiation from the insulator is chosen as a function of the resin used and the precision sought, for example in the ultraviolet range.
  • the microbeads 22 are then removed from the resin layer 20 during a fifth step (not shown).
  • a sixth step (FIG. 5C) the resin is developed by the implementation of a conventional process under conditions compatible with the type of resin used. Circular patterns 23 are thus formed in the resin layer 20 at the locations of the microbeads 22. These patterns 23 are then used to engrave holes 4 and corresponding well blanks 17 in layers 3, 16, 18, and 13, of the stack from the first phase, as will be seen later in relation to FIGS. 6A to 6C.
  • a variant of the insolation step consists in exposing the resin layer 20, still by means of a quasi-parallel light insulator, but by tilting the layer 20 relative to the axis of the beam, and making it rotate around this axis.
  • the stack from the first phase for example coated with the resin layer 20 on which the microbeads 22 have been deposited, is placed on a rotary support inclined at a given angle relative to the axis of the beam.
  • the diameter actually insulated directly above each microbead 22 is found to be less than the diameter of the microbeads 22. This gives patterns 23 of diameter less than the diameter of the microbeads 22.
  • the ratio between the diameter of the microbeads 22 and the diameter of the patterns 23 obtained depends on the angle of inclination of the support relative to the axis of the quasi-parallel beam of radiation from the insolator. This variant further improves the resolution obtained by implementing the method according to the invention. It is indeed possible to use microbeads 22 of larger size which will have better uniformity between them. We can by example make patterns 23 with a diameter of 2 ⁇ m using microbeads 22 having a diameter of 5 ⁇ m.
  • FIGS. 6A to 6C illustrate an example of implementation of a third phase of the method according to the invention.
  • This third phase corresponds to the formation of holes 4 in lines 14 of grid 3, and of deposition of microtips 2 in wells 17 directly above these holes 4.
  • the sections of FIGS. 6A to 6C represent a part of a pixel defined by the intersection of a line 14 of the grid 3 and a column 15 of the cathode 1.
  • the etching this first step is carried out in such a way that it attacks the material of the grid 3 without attacking the material of the insulating layer 16.
  • it is preferably an anisotropic etching.
  • etching is carried out up to the etching stop layer 19.
  • blanks of wells 17 are etched in the isolation layers 16 (and possibly 18) and cathode conductors 13. This etching is anisotropic so that the well blanks 17 are aligned with the circular patterns 23.
  • the well blanks 17 have, for example, a diameter of 1.3 ⁇ m like the holes 4.
  • the etchings of the second and third stages are stopped by the etching stop layer 19 so as not to attack the resistive layer 11 on which the microtips 2 are to be deposited.
  • the etching of the lines 14 of the grid 3 could also be done previously in the second phase.
  • the reactive ion etching of the second step (FIG. 6A) can be carried out, at the locations of the patterns 23, simultaneously in the layers 3, 16 (and if necessary 18), and 13. In this way the holes 4 and the well blanks 17 are formed simultaneously.
  • the pre-sunstroke step (FIG. 5B) of the second phase is then no longer necessary since the grid lines are already formed.
  • this pre-sunshine step could be used to limit the formation of the patterns 23 directly above the cathode conductors 13, ie inside the columns 15.
  • the microdots 2 are deposited during a fourth step (not shown), in a conventional manner.
  • an uplift elimination layer (commonly called a "lift-off" layer) is used on which an conductive material is evaporated.
  • This evaporation leads on the one hand to the formation of a residual layer on the elimination layer by lifting and on the other hand to the formation of the microtips 2 in the wells 17.
  • These microtips 2 have, for example, a diameter at the base of 1.1 ⁇ m and a height of the order of 1.2 ⁇ m.
  • the residual layer is removed, using the lifting removal layer.
  • Figure 6C we then obtain a structure as shown in Figure 6C.
  • the etching stop layer 19 surrounding the microtips 2 is eliminated. This elimination leads to the formation between each microtip 2 and a cathode conductor 13, through the resistive layer 11, an annular resistance of the same value for all microtips 2.
  • microtip cathode A particular example of embodiment of a microtip cathode will be indicated below, specifying the materials and the types of etching used.
  • each of the constituents described for the layers may be replaced by one or more constituents having the same characteristics and / or fulfilling the same function.
  • the etching means described by way of example may be replaced by other etching means, dry or wet, making it possible to achieve the same result.
  • the succession of steps given by way of example can be modified according to the materials and etching means used.
  • the step of obtaining the auxiliary insulating layer 18 (phase 1, step 4) could be postponed after the etching of the cathode conductors 13, the cathode conductors 13 then also being oxidized on their edges.
  • grid lines 14 could be postponed until the end of the process. In this case, we would maintain the second stage of the second phase, by pre-insulating surfaces that correspond to the grid lines. This is to avoid the formation of patterns 23 between the lines 14, which would lead to the removal of the insulation layer 16 at the locations of these patterns.
  • the first and second stages of the third phase are in this case simultaneous.
  • the dimensional indications given by way of example can be modified as a function of the characteristics sought for the screen, of the materials used, or others.
  • the diameter of the microbeads 22 used depends on the diameter desired for the holes 4 of the grid 3 and on the exposure technique used (vertical or oblique).

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  • Cold Cathode And The Manufacture (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
  • Gas-Filled Discharge Tubes (AREA)
EP95410079A 1994-08-05 1995-08-02 Kathode eines flachen Bildschirmes mit konstantem Zugriffswiderstand Expired - Lifetime EP0696045B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9409925 1994-08-05
FR9409925A FR2723471B1 (fr) 1994-08-05 1994-08-05 Cathode d'ecran plat de visualisation a resistance d'acces constante

Publications (2)

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EP0696045A1 true EP0696045A1 (de) 1996-02-07
EP0696045B1 EP0696045B1 (de) 1999-10-13

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US (2) US5808403A (de)
EP (1) EP0696045B1 (de)
JP (1) JPH08111181A (de)
DE (1) DE69512722T2 (de)
FR (1) FR2723471B1 (de)

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US6620012B1 (en) 2000-10-27 2003-09-16 Science Applications International Corporation Method for testing a light-emitting panel and the components therein
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EP0316214A1 (de) * 1987-11-06 1989-05-17 Commissariat A L'energie Atomique Elektronenquelle mit Mikrospitzen-Emissionskathoden und diese Quelle benutzende Bildwiedergabe-Anordnung, die auf durch Feldemission angeregter Kathodolumineszenz beruht
US4940916A (en) 1987-11-06 1990-07-10 Commissariat A L'energie Atomique Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source
US4940916B1 (en) 1987-11-06 1996-11-26 Commissariat Energie Atomique Electron source with micropoint emissive cathodes and display means by cathodoluminescence excited by field emission using said source
US4990766A (en) * 1989-05-22 1991-02-05 Murasa International Solid state electron amplifier
FR2650119A1 (fr) * 1989-07-21 1991-01-25 Thomson Tubes Electroniques Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation
US5057047A (en) * 1990-09-27 1991-10-15 The United States Of America As Represented By The Secretary Of The Navy Low capacitance field emitter array and method of manufacture therefor
EP0483814A2 (de) * 1990-10-30 1992-05-06 Sony Corporation Feldemissionseinrichtung und Herstellungsverfahren
EP0501785A2 (de) * 1991-03-01 1992-09-02 Raytheon Company Elektronenemittierende Struktur und Herstellungsverfahren

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2742578A1 (fr) * 1995-12-13 1997-06-20 Futaba Denshi Kogyo Kk Cathode a emission de champ et son procede de fabrication

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US6104131A (en) 2000-08-15
DE69512722T2 (de) 2000-04-06
EP0696045B1 (de) 1999-10-13
FR2723471B1 (fr) 1996-10-31
JPH08111181A (ja) 1996-04-30
US5808403A (en) 1998-09-15
FR2723471A1 (fr) 1996-02-09
DE69512722D1 (de) 1999-11-18

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