EP0675422B1 - Regulator circuit generating a reference voltage independent of temperature or supply voltage - Google Patents
Regulator circuit generating a reference voltage independent of temperature or supply voltage Download PDFInfo
- Publication number
- EP0675422B1 EP0675422B1 EP95200704A EP95200704A EP0675422B1 EP 0675422 B1 EP0675422 B1 EP 0675422B1 EP 95200704 A EP95200704 A EP 95200704A EP 95200704 A EP95200704 A EP 95200704A EP 0675422 B1 EP0675422 B1 EP 0675422B1
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- European Patent Office
- Prior art keywords
- transistor
- emitter
- collector
- resistor
- base
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/265—Current mirrors using bipolar transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/30—Regulators using the difference between the base-emitter voltages of two bipolar transistors operating at different current densities
Definitions
- the present invention relates to a regulator circuit providing a stabilized voltage, circuit which is connected between a supply terminal and a reference terminal and includes in particular four transistors of the same polarity each having a transmitter, a base and a collector, a first transistor whose emitter is coupled to the reference terminal through a first resistor, a second transistor whose emitter is connected to the reference terminal, the bases and the collectors of the first and second transistors being connected in cross coupling, a third transistor whose emitter is connected to the collector of the first transistor, its base and its collector connected together at one end of a second resistance, and a fourth transistor whose emitter is connected to the collector of the second transistor, and the base connected to the base and to the collector of the third transistor, circuit in which the surface emitter of the first transistor is larger than that of the third transistor.
- Such a regulator circuit based on a four cell transistors of the same polarity is known from document EP-A-0329232.
- this basic four-transistor cell can supply either a plurality of stabilized current sources or else a voltage source independent of the supply voltage and the temperature.
- stabilized current or voltage can be achieved using bipolar transistors only of NPN type. It follows that such circuit can react quickly to variations in supply voltage or to variations in the current consumed at the output.
- the known regulator circuit does not take into account the base currents of the transistors so the accuracy of the stabilized voltage obtained remains affected by qualified errors second-order errors.
- the invention proposes to provide an improvement to a regulator providing a stabilized voltage which is less sensitive still at the value of the supply voltage on either side of a rated voltage, which exhibits high rejection of noise from the supply voltage and which remains stable compared to temperature variations.
- a regulating circuit of the type indicated in the introductory paragraph is characterized in that the circuit further comprises a fifth bipolar transistor similarly polarity than the aforementioned transistors, having a transmitter connected to the collector of the fourth transistor, a base coupled to its collector at through a basic resistance of value at least equal to twice the value of the second resistance, and in that the knot connecting this basic resistance to the collector of this fifth transistor is on the one hand coupled to the other end of the second resistor and secondly, coupled to the power supply terminal through a current source.
- the presence of the fifth transistor provides compensation for certain base currents, compensation which had been neglected in the circuit known.
- the basic resistance of the fifth transistor is chosen from a value which is related to the value of the second resistance.
- connection between the emitter of the fifth transistor and the collector of the fourth transistor constitutes an output of the stabilized voltage.
- This stabilized voltage is particularly independent of the supply voltage and has a rejection rate high noise contained in the supply voltage.
- the second, fourth and fifth transistors have an identical emitter surface.
- the third transistor it is known that its emitter surface must be provided as being a submultiple of the emitter surface of the first transistor, this the latter being, in practice, constituted by the association of a plurality of identical transistors, connected in parallel, each of which is equivalent construction and matched to the third transistor.
- the third transistor can also have a emitter area equal to that of the second, fourth or fifth transistors.
- the circuit regulator is characterized in that it further comprises a sixth transistor and a seventh transistor, with the same polarity as the transistors previous, the sixth transistor, connected in diode being inserted in the direct direction between the other end of the second resistor and the source of current while the seventh transistor has its base connected to the emitter of the fourth transistor, its collector coupled to the terminal power supply, and its transmitter, which provides an output of the voltage stabilized, is coupled to the reference terminal through a resistor transmitter.
- This embodiment has an output impedance of the lower stabilized voltage and therefore allows current consumption higher output, compared with the implementation mode previous.
- the collector of the seventh transistor can also be another circuit output regulator providing a stabilized reference current with respect to the supply voltage and temperature.
- the regulator circuit according to the invention can be realized only using NPN type bipolar transistors, it is able to react at high frequency, in particular to reject the output supply voltage fluctuations, high frequency. For further increase this rejection power, vis-à-vis the voltage noise power supply, the regulator circuit according to the invention is advantageously completed with a capacity connected in parallel between the bases of the fifth transistor and the second transistor.
- the capacity in question may be of low value (a few pF per example) to be integrated with the regulator circuit, its effect is finding multiplied by the gain of the second transistor.
- the rejection power vis-à-vis the noise of the supply voltage in as a function of the frequency of this noise increases with frequency from of a certain frequency value, of the order of 1 MHz.
- This property contrast with the behavior of regulating circuits of the prior art using a high gain error amplifier which must be stabilized in frequency.
- such regulating circuits have a power noise rejection which decreases beyond a limit frequency, actually corresponding to the frequency from which the amplifier error is voluntarily limited in gain.
- the current source supplying the regulator circuit to from the supply terminal is reduced to a resistance.
- the current source supplying the regulator circuit to from the supply terminal is reduced to a resistance.
- the regulator circuit of FIG. 1 is supplied between a positive supply voltage terminal 1 having a voltage Vcc and a reference terminal 2 carrying a voltage VEE (ground).
- This circuit comprises a first transistor T1 whose emitter is coupled to the terminal of reference 2 through an emitter resistor R1, a second transistor T2 whose transmitter is also connected to reference terminal 2, the transistors T1 and T2 have their bases and their collectors interconnected in cross-coupling.
- a third transistor T3 has its emitter connected to the collector of the first transistor T1, its base and its collector combined to form a diode configuration are connected on the one hand, to a first end of a second resistor R2, as well as at the base of a fourth transistor T4 whose emitter is connected to the collector of the second transistor T2.
- the four transistors T1 to T4 have the same polarity, here NPN type, and the emitter area of the first transitor T1 is n times larger than that of the third transistor T3.
- T2 and T4 transistors preferably have an identical emitter surface which can also be equal to that of transistor T3.
- the other end of the second resistor R2 is coupled to the positive supply terminal 1 through a source of current 11 which here is simply constituted by a resistor, in this example.
- the connection between the current source 11 and the resistor R2 forms a line 12 to which is connected a resistor R5 supplying the base of a fifth transistor T5, which has its collector connected to the line 12 and its emitter connected to the collector of the fourth transistor T4.
- I1 kT qR1 Ln (( J (( T 3 ) J (( T1 ) )
- n the ratio of the emitter surfaces of these transistors, traversed by the same current I1
- Expression (2) checks the proportionality between I1 and the absolute temperature T.
- the current source 11 constitutes a very current source imperfect in which flows a current which varies with the voltage Vcc supply.
- the tension of line 12 being practically fixed by the sum of the base / emitter voltages of transistors T2 and T3 increased by the voltage drop in resistor R2 due to the current I1, the current I2 simply results from the difference between the current delivered by the current source 11 and the current I1.
- the transistor T5 presents to its transmitter a voltage deduced from the voltage Vx by subtracting a base / emitter voltage of this transistor which outputs the current I2.
- transistor T5 is chosen as having a surface emitter equal to the emitter surfaces of the transistors T2 or T4 so that the base / emitter voltage drop in transistor T5 compensates for the voltage drop in transistor T2. It follows that the tension of Vref output of the circuit is substantially equal to the sum of a fall of voltage I1.R2 with a positive coefficient of temperature and a base / emitter voltage of transistor T3 traversed by a current I1, which base / emitter voltage has a negative temperature coefficient.
- the resistance value R2 is chosen so that the two components of the sum of the voltages have temperature coefficients that cancel each other out. In practice it is usual to use a voltage drop I1.R2 whose value is around 500mV.
- the base current of transistor T5 being, firstly approximation, substantially equal to the base current of transistor T4 or of base current of transistor T2, compensation for the aforementioned effect on the voltage Vx of line 12 should be obtained when the resistance R5 inserted in the base of transistor T5 is equal to twice the value of resistance R2. Thus the increase in voltage Vx should be compensated at the output of the regulator circuit.
- the regulator circuit is able to react to fluctuations in supply voltages even when these fluctuations are at high frequencies.
- the rejection of the noise contained in the supply voltage Vcc can be further improved in a preferred embodiment according to which the base of transistor T5 is coupled to the base of transistor T2 at using a capacity C.
- This capacity can be easily integrated from the makes a low value enough. Its effect, as a first approximation, is multiplied by the gain of transistor T2.
- the rejection rate R of noise at the output of the regulator circuit from the noise presented by the supply voltage Vcc is represented in FIG. 2 curve A, in function of the frequency F of this noise.
- Figure 3 shows very schematically the principle behind many known regulator circuits.
- a cell 30 with two transistors whose emitter surfaces are uneven, intended for deliver a current proportional to the temperature on a resistance of compensation R.
- the collectors of the transistors debit on loads paired, symbolically represented by a set 31.
- the circuit also comprises a differential amplifier 32, with high gain, of which the output feeds the combined bases of the two transistors, all arranged so that the collector currents of the transistors are equal.
- the amplifier 32 is therefore an error amplifier and thus, the voltage the reference Vref at the output of this amplifier is all the more precise that the amplifier gain is high. He is well known, that such an amplifier needs to be frequency stabilized and has therefore a gain curve G whose shape is represented in the figure 4.
- the power of noise noise rejection R power supply for a regulator circuit of this type, has a shape inverse to that of gain, such as that indicated by curve B in dashes, of figure 2. It is clear that from the point of view of the rejection of the noise, the circuit according to the invention is very advantageous in applications where high frequency noise is present.
- FIG. 5 represents the diagram of a second mode of implementation of the invention.
- the circuit of FIG. 5 shows all the elements of the circuit of FIG. 1 to which are added a sixth transistor T6 and a seventh transistor T7 of the same polarity as the transistors T1 to T5.
- the transistor T6 is connected as a diode, its emitter-collector path is inserted between the resistor R2 and the line 12.
- the voltage Vx of the line 12 is thus increased by the value of a V BE compared to the example previously described .
- the transistor T7 has its base connected to the node joining the emitter of the transistor T5 at the collector of transistor T4. Its transmitter is coupled to the reference terminal 2 through an emitter load resistor R7.
- the transistor T7 is therefore arranged as a follower emitter and provides on its transmitter stabilized voltage Vref.
- the base / emitter voltage drop of T7 compensates, as a first approximation, for the voltage drop in the transistor T6 so that the voltage Vref is again practically identical to that obtained previously with the circuit of FIG. 1.
- the output impedance of the circuit is lower than before and a higher current can be drawn to the output.
- the collector of the transistor is represented as being supplied by a terminal 17. This can be connected directly to line 12 or to supply terminal 1. However, the circuit shown can also provide a stabilized reference current Io, absorbed by the collector of transistor T7. Terminal 17 then constitutes such an output of the regulator circuit.
- the current source 11 presented as a resistor so-called limitation in Figure 1 is only a simplified example and we could also use any other current source provided with means ensuring, for example, even rough pre-regulation of the current supplying the two branches of the regulator circuit. In applications where the voltage regulator circuit is not used continuously, it it is desirable to be able to deactivate the regulator circuit when its use is not required, so as to save power consumption.
- Figure 6 shows an example of substitution of the source of current 11 of FIG. 1 by a resistor 21 and transistor assembly MOS field effect 22.
- a current source can be produced switchable which has a resistance equal to the sum of the value of the resistor 21 and the internal resistance of transistor 22 when it is driver.
- FIG. 7 represents another example of current source 11, provided with means ensuring a pre-regulation of the supply current the entire regulator circuit.
- Two resistors 31 and 32 are connected in series between the supply terminal 1 and the line 12.
- the common point between these resistors has its voltage V D regulated by the effect of four diodes D1 to D4, connected in series between this point and the reference terminal 2.
- Figure 8 shows yet another example of a current source 11 using at least one PNP type transistor T8, ensuring by all known means, a pre-regulation of the current delivered by its path transmitter / collector.
- PNP type transistor has the disadvantage that the parasitic capacitance of such a transistor is generally large which is unfavorable from the point of view of voltage noise rejection feed.
- a resistor 41 is inserted between the collector of transistor T8 and line 12 so as to reduce the effect of the stray capacitance of transistor T8.
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Description
La présente invention concerne un circuit régulateur fournissant une tension stabilisée, circuit qui est connecté entre une borne d'alimentation et une borne de référence et comporte notamment quatre transistors de même polarité ayant chacun un émetteur une base et un collecteur, un premier transistor dont l'émetteur est couplé à la borne de référence à travers une première résistance, un deuxième transistor dont l'émetteur est connecté à la borne de référence, les bases et les collecteurs des premier et deuxième transistors étant connectés en couplage croisé, un troisième transistor dont l'émetteur est connecté au collecteur du premier transistor, sa base et son collecteur connectés ensemble à une des extrémités d'une deuxième résistance, et un quatrième transistor dont l'émetteur est connecté au collecteur du deuxième transistor, et la base connectée à la base et au collecteur du troisième transistor, circuit dans lequel la surface d'émetteur du premier transistor est plus grande que celle du troisième transistor.The present invention relates to a regulator circuit providing a stabilized voltage, circuit which is connected between a supply terminal and a reference terminal and includes in particular four transistors of the same polarity each having a transmitter, a base and a collector, a first transistor whose emitter is coupled to the reference terminal through a first resistor, a second transistor whose emitter is connected to the reference terminal, the bases and the collectors of the first and second transistors being connected in cross coupling, a third transistor whose emitter is connected to the collector of the first transistor, its base and its collector connected together at one end of a second resistance, and a fourth transistor whose emitter is connected to the collector of the second transistor, and the base connected to the base and to the collector of the third transistor, circuit in which the surface emitter of the first transistor is larger than that of the third transistor.
Un tel circuit régulateur basé sur une cellule à quatre transistors de même polarité, est connu du document EP-A-0329232. Dans ce document il est indiqué que cette cellule de base à quatre transistors peut fournir soit une pluralité de sources de courant stabilisées soit encore une source de tension indépendante de la tension d'alimentation et de la température. Ainsi qu'il est indiqué dans ce document, de telles sources stabilisées de courant ou de tension peuvent être réalisées à l'aide de transistors bipolaires uniquement de type NPN. Il s'ensuit qu'un tel circuit peut réagir rapidement à des variations de tension d'alimentation ou à des variations du courant consommé en sortie.Such a regulator circuit based on a four cell transistors of the same polarity, is known from document EP-A-0329232. In this document it says that this basic four-transistor cell can supply either a plurality of stabilized current sources or else a voltage source independent of the supply voltage and the temperature. As noted in this document, such sources stabilized current or voltage can be achieved using bipolar transistors only of NPN type. It follows that such circuit can react quickly to variations in supply voltage or to variations in the current consumed at the output.
Toutefois, le circuit régulateur connu ne prend pas en compte les courants de base des transistors de sorte que la précision de la tension stabilisée obtenue reste affectée par des erreurs qualifiées d'erreurs de second ordre.However, the known regulator circuit does not take into account the base currents of the transistors so the accuracy of the stabilized voltage obtained remains affected by qualified errors second-order errors.
L'invention se propose de fournir un perfectionnement à un régulateur fournissant une tension stabilisée qui soit moins sensible encore à la valeur de la tension d'alimentation de part et d'autre d'une tension nominale, qui présente une réjection élevée du bruit provenant de la tension d'alimentation et qui demeure stable par rapport à des variations de la température. The invention proposes to provide an improvement to a regulator providing a stabilized voltage which is less sensitive still at the value of the supply voltage on either side of a rated voltage, which exhibits high rejection of noise from the supply voltage and which remains stable compared to temperature variations.
En effet, selon la présente invention, un circuit régulateur du type indiqué dans le paragraphe introductif est caractérisé en ce que le circuit comporte en outre un cinquième transistor bipolaire de même polarité que les transistors précédemment cités, ayant un émetteur connecté au collecteur du quatrième transistor, une base couplée à son collecteur à travers une résistance de base de valeur au moins égale au double de la valeur de la deuxième résistance, et en ce que le noeud reliant cette résistance de base au collecteur de ce cinquième transistor est d'une part couplé à l'autre extremité de la deuxième résistance et d'autre part, couplé à la borne d'alimentation à travers une source de courant.Indeed, according to the present invention, a regulating circuit of the type indicated in the introductory paragraph is characterized in that the circuit further comprises a fifth bipolar transistor similarly polarity than the aforementioned transistors, having a transmitter connected to the collector of the fourth transistor, a base coupled to its collector at through a basic resistance of value at least equal to twice the value of the second resistance, and in that the knot connecting this basic resistance to the collector of this fifth transistor is on the one hand coupled to the other end of the second resistor and secondly, coupled to the power supply terminal through a current source.
Ainsi qu'il sera discuté plus en détail par la suite, la présence du cinquième transistor, fournit une compensation de certains courants de base, compensation qui avait été négligée dans le circuit connu. Pour ce faire, la résistance de base du cinquième transistor est choisie d'une valeur qui est en relation avec la valeur de la deuxième résistance.As will be discussed in more detail below, the presence of the fifth transistor, provides compensation for certain base currents, compensation which had been neglected in the circuit known. To do this, the basic resistance of the fifth transistor is chosen from a value which is related to the value of the second resistance.
Selon un premier mode de mise en oeuvre de l'invention, la connexion entre l'émetteur du cinquième transistor et le collecteur du quatrième transistor constitue une sortie de la tension stabilisée.According to a first embodiment of the invention, the connection between the emitter of the fifth transistor and the collector of the fourth transistor constitutes an output of the stabilized voltage.
La valeur de cette tension stabilisée est particulièrement indépendante de la tension d'alimentation et présente un taux de réjection élevé du bruit contenu dans la tension d'alimentation.The value of this stabilized voltage is particularly independent of the supply voltage and has a rejection rate high noise contained in the supply voltage.
Avantageusement, les deuxième, quatrième et cinquième transistors ont une surface d'émetteur identique. En ce qui concerne le troisième transistor, il est connu que sa surface d'émetteur doit être prévue comme étant un sous-multiple de la surface d'émetteur du premier transistor, ce dernier étant, en pratique, constitué par l'association d'une pluralité de transistors identiques, connectés en parallèle, dont chacun est de construction équivalente et appairé au troisième transistor.Advantageously, the second, fourth and fifth transistors have an identical emitter surface. Regarding the third transistor, it is known that its emitter surface must be provided as being a submultiple of the emitter surface of the first transistor, this the latter being, in practice, constituted by the association of a plurality of identical transistors, connected in parallel, each of which is equivalent construction and matched to the third transistor.
Pour simplifier, le troisième transistor peut également avoir une surface d'émetteur égale à celle des deuxième, quatrième ou cinquième transistors.To simplify, the third transistor can also have a emitter area equal to that of the second, fourth or fifth transistors.
Selon un deuxième mode de mise en oeuvre de l'invention, le circuit régulateur est caractérisé en ce qu'il comporte en outre un sixième transistor et un septième transistor, de même polarité que les transistors précédents, le sixième transistor, connecté en diode étant inséré dans le sens direct entre l'autre extrémité de la deuxième résistance et la source de courant tandis que le septième transistor a sa base connectée à l'émetteur du quatrième transistor, son collecteur couplé à la borne d'alimentation, et son émetteur, qui fournit une sortie de la tension stabilisée, est couplé à la borne de référence à travers une résistance d'émetteur.According to a second embodiment of the invention, the circuit regulator is characterized in that it further comprises a sixth transistor and a seventh transistor, with the same polarity as the transistors previous, the sixth transistor, connected in diode being inserted in the direct direction between the other end of the second resistor and the source of current while the seventh transistor has its base connected to the emitter of the fourth transistor, its collector coupled to the terminal power supply, and its transmitter, which provides an output of the voltage stabilized, is coupled to the reference terminal through a resistor transmitter.
Ce mode de mise en oeuvre, présente une impédance de sortie de la tension stabilisée plus faible et autorise donc une consommation de courant en sortie plus élevée, par comparaison avec le mode de mise en oeuvre précédent. Une autre particularité avantageuse est que le collecteur du septième transistor peut également constituer une autre sortie du circuit régulateur fournissant un courant de référence stabilisé vis-à-vis de la tension d'alimentation et de la température.This embodiment has an output impedance of the lower stabilized voltage and therefore allows current consumption higher output, compared with the implementation mode previous. Another advantageous feature is that the collector of the seventh transistor can also be another circuit output regulator providing a stabilized reference current with respect to the supply voltage and temperature.
Etant donné que le circuit régulateur selon l'invention peut être réalisé uniquement à l'aide de transistors bipolaires de type NPN, il est apte à réagir à haute fréquence, notamment pour rejeter en sortie les fluctuations de la tension d'alimentation, à haute fréquence. Pour augmenter encore ce pouvoir de réjection, vis-à-vis du bruit de la tension d'alimentation, le circuit régulateur selon l'invention est avantageusement complété avec une capacité connectée en parallèle entre les bases du cinquième transistor et du deuxième transistor.Since the regulator circuit according to the invention can be realized only using NPN type bipolar transistors, it is able to react at high frequency, in particular to reject the output supply voltage fluctuations, high frequency. For further increase this rejection power, vis-à-vis the voltage noise power supply, the regulator circuit according to the invention is advantageously completed with a capacity connected in parallel between the bases of the fifth transistor and the second transistor.
La capacité en question peut être de faible valeur (quelques pF par exemple) pour être intégrée avec le circuit régulateur, son effet se trouvant multiplié par le gain du deuxième transistor. On constate que le pouvoir de réjection vis-à-vis du bruit de la tension d'alimentation en fonction de la fréquence de ce bruit, augmente avec la fréquence à partir d'une certaine valeur de fréquence, de l'ordre de 1MHz. Cette propriété contraste avec le comportement des circuits régulateurs de l'art antérieur utilisant un amplificateur d'erreur à gain élevé qui doit être stabilisé en fréquence. De tels circuits régulateurs présentent au contraire un pouvoir de réjection du bruit qui diminue au delà d'une fréquence limite, correspondant en fait à la fréquence à partir de laquelle l'amplificateur d'erreur est volontairement limité en gain.The capacity in question may be of low value (a few pF per example) to be integrated with the regulator circuit, its effect is finding multiplied by the gain of the second transistor. We see that the rejection power vis-à-vis the noise of the supply voltage in as a function of the frequency of this noise, increases with frequency from of a certain frequency value, of the order of 1 MHz. This property contrast with the behavior of regulating circuits of the prior art using a high gain error amplifier which must be stabilized in frequency. On the contrary, such regulating circuits have a power noise rejection which decreases beyond a limit frequency, actually corresponding to the frequency from which the amplifier error is voluntarily limited in gain.
Selon un mode simplifié de réalisation du circuit régulateur selon l'invention, la source de courant alimentant le circuit régulateur à partir de la borne d'alimentation se réduit à une résistance. Pour des raisons d'économie du courant d'alimentation, notamment dans des applications alimentées par batterie, il peut être avantageux de pouvoir désactiver complètement le circuit régulateur, ce qui peut être réalisé lorsque la source de courant est réalisée à l'aide d'une résistance en série avec un transistor interrupteur de type à effet de champ MOS.According to a simplified embodiment of the regulator circuit according to the invention, the current source supplying the regulator circuit to from the supply terminal is reduced to a resistance. For some reasons for saving the supply current, especially in battery-powered applications, it may be advantageous to be able to completely deactivate the regulator circuit, which can be achieved when the current source is produced using a resistor in series with a MOS field effect type switch transistor.
D'autres types de sources de courant peuvent également être mises en oeuvre, en particulier, des sources assurant une prérégulation du courant alimentant le circuit régulateur.Other types of current sources can also be used works, in particular, sources ensuring a pre-regulation of the current supplying the regulator circuit.
La description qui va suivre en regard des dessins annexés,
donnée à titre d'exemple non limitatif, fera bien comprendre en quoi
consiste l'invention et comment elle peut être réalisée.
Le circuit régulateur de la figure 1 est alimenté entre une
borne de tension d'alimentation positive 1 présentant une tension Vcc et
une borne de référence 2 portant une tension VEE (masse). Ce circuit
comporte un premier transistor T1 dont l'émetteur est couplé à la borne de
référence 2 à travers une résistance d'émetteur R1, un deuxième transistor
T2 dont l'émetteur est également connecté à la borne de référence 2, les
transistors T1 et T2 ont leurs bases et leurs collecteurs interconnectés en
couplage croisé. Un troisième transistor T3 a son émetteur connecté au
collecteur du premier transistor T1, sa base et son collecteur réunis pour
former une configuration en diode sont connectés d'une part, à une première
extrémité d'une deuxième résistance R2, ainsi qu'à la base d'un quatrième
transistor T4 dont l'émetteur est connecté au collecteur du deuxième
transistor T2. Les quatre transistors T1 à T4, sont de même polarité, ici
de type NPN, et la surface d'émetteur du premier transitor T1 est n fois
plus grande que celle du troisième transistor T3. Les transistors T2 et T4
ont de préférence une surface d'émetteur identique qui peut être aussi
égale à celle du transistor T3. L'autre extrémité de la deuxième résistance
R2 est couplée à la borne d'alimentation positive 1 à travers une source de
courant 11 qui est ici simplement constituée par une résistance, dans cet
exemple. La connexion entre la source de courant 11 et la résistance R2
forme une ligne 12 à laquelle est connectée une résistance R5 alimentant la
base d'un cinquième transistor T5, lequel a son collecteur relié à la ligne
12 et son émetteur relié au collecteur du quatrième transistor T4.The regulator circuit of FIG. 1 is supplied between a
positive
Le noeud reliant l'émetteur du transistor T5 au collecteur du transistor T4, constitue ici la sortie du circuit régulateur et fournit une tension stabilisée Vref.The node connecting the emitter of transistor T5 to the collector of transistor T4, here constitutes the output of the regulator circuit and provides a stabilized voltage Vref.
Dans une première analyse de fonctionnement qui est grossière, on néglige les courants de base de tous les transistors. Ainsi, on peut admettre que dans la branche formée des trajets de courant des transistors T1 et T3 et des résistances R1 et R2 circule un courant I1. De même dans la branche formée des trajets de courant des transistors T2, T4 et T5 circule un autre courant I2. Par ailleurs il est connu que le montage des quatre transistors T1 à T4 produit un courant I1 dont la valeur est proportionnelle à la température absolue et ne dépend que de la valeur de la résistance R1 et du rapport de surface d'émetteur entre le transistor T1 et le transistor T3.In a first analysis of operation which is rough, the basic currents of all the transistors are neglected. So we can admit that in the branch formed by the current paths of the transistors T1 and T3 and resistors R1 and R2 flows a current I1. Likewise in the branch formed by the current paths of the transistors T2, T4 and T5 flows another current I2. Furthermore, it is known that the mounting of the four transistors T1 to T4 produces a current I1 whose value is proportional to the absolute temperature and only depends on the value of resistance R1 and the emitter area ratio between transistor T1 and transistor T3.
Cette propriété va être brièvement rappelée en évaluant de deux
manières, la valeur de la tension de base des transistors T3 et T4.
Soit Vy cette tension :
Il vient
He comes
Comme les transistors T2 et T4 sont identiques et parcourus, en
première approximation, par le même courant I2, les termes VBE(T2) et
VBE(T4) se compensent. Il reste :
La source de courant 11 constitue une source de courant très
imparfaite dans laquelle circule un courant qui varie avec la tension
d'alimentation Vcc. Ainsi, la tension de la ligne 12 étant pratiquement
fixée par la somme des tensions base/émetteur des transistors T2 et T3
augmentée de la chute de tension dans la résistance R2 du fait du courant
I1, le courant I2 résulte simplement de la différence entre le courant
débité par la source de courant 11 et le courant I1. Toujours dans la même
hypotèse, où les courants de base sont négligés, le transistor T5 présente
à son émetteur une tension déduite de la tension Vx par soustraction d'une
tension base/émetteur de ce transistor qui débite le courant I2.The
Or, le transistor T5 est choisi comme ayant une surface d'émetteur égale aux surfaces d'émetteur des transistors T2 ou T4 de sorte que la chute de tension base/émetteur dans le transistor T5 compense la chute de tension dans le transistor T2. Il s'ensuit que la tension de sortie Vref du circuit est sensiblement égale à la somme d'une chute de tension I1.R2 présentant un coefficient positif de température et d'une tension base/émetteur du transistor T3 parcouru par un courant I1, laquelle tension base/émetteur présente un coefficient de température négatif. La valeur de la résistance R2 est choisie de telle sorte que les deux composantes de la somme des tensions aient des coefficients de température qui s'annulent. En pratique il est habituel d'utiliser une chute de tension I1.R2 dont la valeur soit de l'ordre de 500mV.Now, transistor T5 is chosen as having a surface emitter equal to the emitter surfaces of the transistors T2 or T4 so that the base / emitter voltage drop in transistor T5 compensates for the voltage drop in transistor T2. It follows that the tension of Vref output of the circuit is substantially equal to the sum of a fall of voltage I1.R2 with a positive coefficient of temperature and a base / emitter voltage of transistor T3 traversed by a current I1, which base / emitter voltage has a negative temperature coefficient. The resistance value R2 is chosen so that the two components of the sum of the voltages have temperature coefficients that cancel each other out. In practice it is usual to use a voltage drop I1.R2 whose value is around 500mV.
De cette première analyse qui est grossière, il résulte que la tension de sortie Vref du circuit régulateur est indépendante de la température et de la valeur du courant I2, c'est-à-dire, indépendante de la valeur de la tension d'alimentation Vcc. Selon une analyse plus détaillée, qui tient compte des courants de base des différents transistors, il apparaít que le courant traversant la résistance R2 est approximativement égal au courant I1 traversant le transistor T1 augmenté du courant de base du transistor T2 et du courant de base du transistor T4, lesquels conduisent à un accroissement de la chute de tension dans la résistance R2 initialement calculée.From this rough initial analysis, it follows that the output voltage Vref of the regulator circuit is independent of the temperature and the value of the current I2, that is to say, independent of the value of the supply voltage Vcc. According to a more detailed analysis, which takes into account the base currents of the different transistors, it appears that the current passing through the resistor R2 is approximately equal to the current I1 passing through the transistor T1 increased by the base current of transistor T2 and the basic current of transistor T4, which lead to an increase in the voltage drop in the resistor R2 initially calculated.
Le courant de base du transistor T5 étant, en première
approximation, sensiblement égal au courant de base du transistor T4 ou du
courant de base du transistor T2, une compensation de l'effet précité sur
la tension Vx de la ligne 12 devrait être obtenue lorsque la résistance R5
insérée dans la base du transistor T5 est égale au double de la valeur de
la résistance R2. Ainsi l'accroissement de tension Vx devrait être compensé
en sortie du circuit régulateur.The base current of transistor T5 being, firstly
approximation, substantially equal to the base current of transistor T4 or of
base current of transistor T2, compensation for the aforementioned effect on
the voltage Vx of
Or, il apparaít en pratique que cette compensation est un peu insuffisante notamment du fait qu'une variation de courant de base du transistor T2 induit une très légère variation de la tension base/émetteur du transistor T3, variation qui avait été négligée dans les calculs précédents. Une amélioration de l'insensibilité de la tension de sortie Vref à des variations de la tension d'alimentation Vcc peut être obtenue en augmentant la valeur de la résistance R5 dont la valeur est alors comprise entre 2 et 4 fois la valeur de la résistance R2. La valeur optimale peut être déterminée par un calcul approprié et mieux encore à l'aide d'un simulateur.However, it appears in practice that this compensation is somewhat insufficient, in particular because a variation in the base current of the transistor T2 induces a very slight variation in the base / emitter voltage of transistor T3, a variation which had been neglected in the calculations previous. Improved insensitivity of the output voltage Vref at variations in the supply voltage Vcc can be obtained by increasing the value of resistance R5, the value of which is then understood between 2 and 4 times the value of resistance R2. The optimal value can be determined by an appropriate calculation and better still using a simulator.
Pour une raison de symétrie de fonctionnement du circuit, on
choisit une valeur de la source de courant 11 telle que pour une tension
d'alimentation Vcc nominale, les courants I1 et I2 soient sensiblement
égaux. Pour des valeurs de la tension d'alimentation Vcc qui s'écartent de
la valeur nominale et à une température donnée, le courant I2 varie, mais
comme on l'a vue précédemment, la tension stabilisée obtenue Vref n'est que
très faiblement perturbée.For a reason of symmetry of operation of the circuit, we
choose a value from
Comme tous les transistors mis en oeuvre dans le circuit décrit en exemple sont des transistors de type NPN, le circuit régulateur est apte à réagir à des fluctuations de tensions d'alimentation même lorsque ces fluctuations sont à fréquences élevées.Like all the transistors implemented in the circuit described in example are NPN type transistors, the regulator circuit is able to react to fluctuations in supply voltages even when these fluctuations are at high frequencies.
La réjection du bruit contenu dans la tension d'alimentation Vcc, peut encore être améliorée dans un mode de mise en oeuvre préféré selon lequel la base du transistor T5 est couplée à la base du transistor T2 à l'aide d'une capacité C. Cette capacité peut être facilement intégrable du fait qu'une faible valeur suffit. Son effet, en première approximation, est multiplié par le gain du transistor T2.The rejection of the noise contained in the supply voltage Vcc, can be further improved in a preferred embodiment according to which the base of transistor T5 is coupled to the base of transistor T2 at using a capacity C. This capacity can be easily integrated from the makes a low value enough. Its effect, as a first approximation, is multiplied by the gain of transistor T2.
Selon ce mode de mise en oeuvre, le taux de réjection R de bruit en sortie du circuit régulateur à partir du bruit présenté par la tension d'alimentation Vcc est représenté à la figure 2 courbe A, en fonction de la fréquence F de ce bruit. On observe une particularité intéressante du circuit régulateur selon l'invention du fait que le taux de réjection augmente au-delà d'une certaine fréquence limite. Cette propriété remarquable est particulièrement intéressante lorsque le circuit régulateur est utilisé dans des applications où il est intégré conjointement avec des circuits commutés à hautes fréquences, par exemple des diviseurs de fréquences qui procurent des parasites à fréquences élevées sur la tension d'alimentation.According to this embodiment, the rejection rate R of noise at the output of the regulator circuit from the noise presented by the supply voltage Vcc is represented in FIG. 2 curve A, in function of the frequency F of this noise. We observe a peculiarity advantage of the regulator circuit according to the invention because the rate of rejection increases beyond a certain limit frequency. This property remarkable is particularly interesting when the regulator circuit is used in applications where it is integrated with switched circuits at high frequencies, for example dividers of frequencies which produce high frequency noise on the voltage feed.
La figure 3, montre très schématiquement, le principe à la base de
nombreux circuits régulateurs connus. Il comporte d'une part une cellule 30
à deux transistors dont les surfaces d'émetteur sont inégales, destinée à
délivrer un courant proportionnel à la température sur une résistance de
compensation R. Les collecteurs des transistors débitent sur des charges
appairées, représentées symboliquement par un ensemble 31. Le circuit
comporte d'autre part un amplificateur différentiel 32, à gain élevé, dont
la sortie alimente les bases réunies des deux transistors, le tout agencé
de manière que les courants collecteur des transistors soient égaux.
L'amplificateur 32 est donc un amplificateur d'erreur et ainsi, la tension
de référence Vref en sortie de cet amplificateur est d'autant plus précise
que le gain de l'amplificateur est élevé. Il est bien connu par ailleurs,
qu'un tel amplificateur requiert d'être stabilisé en fréquence et présente
de ce fait une courbe de gain G dont l'allure est représentée à la figure
4.Figure 3 shows very schematically the principle behind
many known regulator circuits. On the one hand it has a
Corrélativement, le pouvoir de réjection R du bruit de la tension d'alimentation, pour un circuit régulateur de ce type, présente une allure inverse de celle du gain, telle que celle indiquée par la courbe B en tirets, de la figure 2. Il est clair que du point de vue de la réjection du bruit, le circuit selon l'invention est très avantageux dans des applications où est présent un bruit à fréquence élevée.Correlatively, the power of noise noise rejection R power supply, for a regulator circuit of this type, has a shape inverse to that of gain, such as that indicated by curve B in dashes, of figure 2. It is clear that from the point of view of the rejection of the noise, the circuit according to the invention is very advantageous in applications where high frequency noise is present.
La figure 5 représente le schéma d'un deuxième mode de mise en oeuvre de l'invention.FIG. 5 represents the diagram of a second mode of implementation of the invention.
Sur cette figure les éléments correspondants à ceux du circuit de la
figure 1 sont affectés des mêmes signes de référence. Le circuit de la
figure 5 reprend tous les éléments du circuit de la figure 1 auxquels sont
ajoutés un sixième transistor T6 et un septième transistor T7 de même
polarité que les transistors T1 à T5. Le transistor T6 est connecté en
diode, son trajet émetteur-collecteur est inséré entre la résistance R2 et
la ligne 12. La tension Vx de la ligne 12 est ainsi augmentée de la valeur
d'un VBE par rapport à l'exemple précédemment décrit.In this figure, the elements corresponding to those of the circuit of FIG. 1 are assigned the same reference signs. The circuit of FIG. 5 shows all the elements of the circuit of FIG. 1 to which are added a sixth transistor T6 and a seventh transistor T7 of the same polarity as the transistors T1 to T5. The transistor T6 is connected as a diode, its emitter-collector path is inserted between the resistor R2 and the
Le transistor T7 a sa base connectée au noeud joignant l'émetteur du
transistor T5 au collecteur du transistor T4. Son émetteur est couplé à la
borne de référence 2 à travers une résistance de charge d'émetteur R7. Le
transistor T7 est donc agencé en émetteur suiveur et fournit sur son
émetteur la tension stabilisée Vref. La chute de tension base/émetteur de
T7 compense, en première approximation, la chute de tension dans le
transistor T6 de sorte que la tension Vref est à nouveau pratiquement
identique à celle obtenue précédemment avec le circuit de la figure 1.The transistor T7 has its base connected to the node joining the emitter of the
transistor T5 at the collector of transistor T4. Its transmitter is coupled to the
Selon ce mode de mise en oeuvre, l'impédance de sortie du circuit est plus faible que précédemment et un courant plus important peut être prélevé à la sortie.According to this mode of implementation, the output impedance of the circuit is lower than before and a higher current can be drawn to the output.
Le collecteur du transistor est représenté comme étant alimenté par
une borne 17. Celle-ci peut être reliée directement à la ligne 12 ou encore
à la borne d'alimentation 1. Toutefois, le circuit représenté peut
également fournir un courant de référence stabilisé Io, absorbé par le
collecteur du transistor T7. La borne 17 constitue alors une telle sortie
du circuit régulateur.The collector of the transistor is represented as being supplied by
a terminal 17. This can be connected directly to
Il est clair que le courant Io est indépendant de la tension d'alimentation et de la température puisqu'il est déduit du courant d'émetteur du transistor T7, lequel crée une chute de tension Vref, stable, dans la résistance R7. Le courant collecteur du transistor T7, de type NPN dont le gain est élevé, est peu différent du courant émetteur et de ce fait, peu affecté par des variations de gain en fonction de la température. It is clear that the current Io is independent of the voltage supply and temperature since it is deduced from the current emitter of transistor T7, which creates a stable voltage drop Vref, in resistance R7. The collector current of transistor T7, of NPN type whose gain is high, is little different from the emitting current and from this fact, little affected by variations in gain as a function of temperature.
Bien entendu, la source de courant 11 présentée comme une résistance
dite de limitation à la figure 1 n'est qu'un exemple simplifié et on
pourrait également utiliser toute autre source de courant munie de moyens
assurant, par exemple, une pré-régulation même grossière du courant
alimentant les deux branches du circuit régulateur. Dans des applications
où le circuit régulateur de tensions n'est pas utilisé en permanence, il
est désirable de pouvoir désactiver le circuit régulateur lorsque son usage
n'est pas requis, de manière à économiser la consommation de courant.Of course, the
La figure 6 présente un exemple de substitution de la source de
courant 11 de la figure 1 par un ensemble résistance 21 et transistor à
effet de champ MOS 22. Par une commande appropriée appliquée à la borne 23
reliée à la grille du transistor 22, on peut réaliser une source de courant
commutable qui présente une résistance égale à la somme de la valeur de la
résistance 21 et de la résistance interne du transistor 22 lorsqu'il est
conducteur.Figure 6 shows an example of substitution of the source of
current 11 of FIG. 1 by a
La figure 7 représente un autre exemple de source de courant 11,
munie de moyens assurant une pré-régulation du courant alimentant
l'ensemble du circuit régulateur.FIG. 7 represents another example of
Deux résistances 31 et 32 sont connectées en série entre la borne
d'alimentation 1 et la ligne 12. Le point commun entre ces résistance a sa
tension VD régulée par l'effet de quatre diodes D1 à D4, connectées en
série entre ce point et la borne de référence 2.Two
Bien que la tension directe de ces diodes varie un peu en fonction de
la température et en fonction du courant qui les traverse, cette variation
reste faible de sorte que le courant délivré par la source de courant 11
est principalement contrôlé par la résistance 31 et la différence de
tension VD-Vx qui varie peu en fonction des variations de Vcc.Although the forward voltage of these diodes varies a little as a function of the temperature and as a function of the current flowing through them, this variation remains small so that the current delivered by the
La figure 8 représente encore un autre exemple de source de courant
11 mettant en oeuvre au moins un transistor T8 de type PNP, assurant par
tous moyens connus, une pré-régulation du courant débité par son trajet
émetteur/collecteur.Figure 8 shows yet another example of a
L'utilisation d'un transistor de type PNP présente l'inconvénient que
la capacité parasite d'un tel transistor est en général importante ce qui
est défavorable du point de vue de la réjection du bruit de la tension
d'alimentation. Pour réduire cet effet, une résistance 41 est insérée entre
le collecteur du transistor T8 et la ligne 12 de manière à atténuer l'effet
de la capacité parasite du transistor T8. The use of a PNP type transistor has the disadvantage that
the parasitic capacitance of such a transistor is generally large which
is unfavorable from the point of view of voltage noise rejection
feed. To reduce this effect, a
Il est clair que les sources de courant décrites en liaison avec les
figures 6, 7 et 8 ne sont que des exemple et que le spécialiste est à même
d'imaginer d'autres combinaisons notamment qui utilisent le transistor
interrupteur 22 de la figure 6 lorsque cela est utile. Les exemples de
circuits régulateurs des figures 1 et 5 sont susceptibles de variantes sans
pour autant sortir du cadre de l'invention telle que revendiquée ci-après.It is clear that the current sources described in connection with the
Figures 6, 7 and 8 are only examples and the specialist is able to
to imagine other combinations in particular which use the
Claims (9)
- A control circuit supplying a stabilized voltage (Vref), which circuit is connected between a supply terminal (1) and a reference terminal (2) and notably includes four transistors of the same conductivity type, each having an emitter, a base and a collector, a first transistor (T1) having its emitter coupled to the reference terminal (2) via a first resistor (R1), a second transistor (T2) having its emitter connected to the reference terminal (2), the bases and the collectors of the first and the second transistor being cross-coupled, a third transistor (T3) having its emitter connected to the collector of the first transistor (T1) and having its base and its collector connected together to one of the ends of a second resistor (R2), which second resistor has its other end coupled to the supply terminal(1), and a fourth transistor (T4) having its emitter connected to the collector of the second transistor (T2) and having its base connected to the base and to the collector of the third transistor (T3), in which circuit the emitter area of the first transistor is larger than that of the second transistor, characterized in that the circuit further comprises a bipolar fifth transistor (T5) of the same conductivity type as the afore-mentioned transistors, which fifth transistor has an emitter connected to the collector of the fourth transistor (T4), a base coupled to its collector via a base resistor (R5) whose value is at least equal to twice the value of the second resistor (R2), and in that the node (12) between this base resistor and the collector of this fifth transistor is, on the one hand, coupled to the other end of the second resistor (R2) and is, on the other hand, coupled to the supply terminal (1) via a current source (11).
- A control circuit as claimed in Claim 1, characterized in that the second, the fourth and the fifth transistor have equal emitter areas.
- A control circuit as claimed in Claim 1 or 2, characterized in that the connection between the emitter of the fifth transistor (T5) and the collector of the fourth transistor (T4) forms an output for the stabilized voltage (Vref).
- A control circuit as claimed in Claim 1 or 2, characterized in that it further comprises a sixth transistor (T6) and a seventh transistor (T7) of the same conductivity type as the preceding transistors, the diode-connected sixth transistor (T6) being poled in the forward direction between the other end of the second resistor (R2) and the current source (11), while the seventh transistor (T7) has its base connected to the emitter of the fifth transistor (T5), has its collector coupled to the supply terminal (1), and has its emitter, which forms an output for the stabilized voltage (Vref), coupled to the reference terminal (2) via an emitter resistor (R7).
- A control circuit as claimed in Claim 4, characterized in that, in addition, the collector of the seventh transistor (T7) forms an output of the control circuit, which output supplies a stabilized reference current (Io).
- A control circuit as claimed in any one of the Claims 1 to 5, characterized in that, in addition, a capacitance (C) is connected between the base of the fifth transistor (T5) and the base of the second transistor (T2).
- A control circuit as claimed in any one of the Claims 1 to 6, characterized in that the current source (11) comprises a so-called limiting resistor (21), (31), (41).
- A control circuit as claimed in Claim 7, characterized in that a switching transistor (22) of the MOS-FET type is arranged between the limiting resistor (21) and the supply terminal (1).
- A control circuit as claimed in Claim 7 or 8, characterized in that the current source further comprises means which preregulate the current applied to the control circuit.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR9403775A FR2718259A1 (en) | 1994-03-30 | 1994-03-30 | Regulator circuit providing a voltage independent of the power supply and the temperature. |
FR9403775 | 1994-03-30 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP0675422A1 EP0675422A1 (en) | 1995-10-04 |
EP0675422B1 true EP0675422B1 (en) | 1999-09-08 |
Family
ID=9461600
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP95200704A Expired - Lifetime EP0675422B1 (en) | 1994-03-30 | 1995-03-22 | Regulator circuit generating a reference voltage independent of temperature or supply voltage |
Country Status (8)
Country | Link |
---|---|
US (1) | US5576616A (en) |
EP (1) | EP0675422B1 (en) |
JP (1) | JPH07271461A (en) |
KR (1) | KR950033755A (en) |
CN (1) | CN1118461A (en) |
DE (1) | DE69511923T2 (en) |
FR (1) | FR2718259A1 (en) |
TW (1) | TW255073B (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19530737A1 (en) * | 1995-08-22 | 1997-02-27 | Philips Patentverwaltung | Circuit arrangement for supplying a constant current |
JP2874634B2 (en) * | 1996-03-01 | 1999-03-24 | 日本電気株式会社 | Reference voltage circuit |
FR2757964B1 (en) * | 1996-12-31 | 1999-03-05 | Sgs Thomson Microelectronics | SERIAL VOLTAGE REGULATOR |
US6002293A (en) * | 1998-03-24 | 1999-12-14 | Analog Devices, Inc. | High transconductance voltage reference cell |
DE19821906C1 (en) * | 1998-05-15 | 2000-03-02 | Siemens Ag | Clamping circuit |
CN1154032C (en) * | 1999-09-02 | 2004-06-16 | 深圳赛意法微电子有限公司 | Band-gap reference circuit |
US6285244B1 (en) * | 1999-10-02 | 2001-09-04 | Texas Instruments Incorporated | Low voltage, VCC incentive, low temperature co-efficient, stable cross-coupled bandgap circuit |
FR2806489B1 (en) * | 2000-03-15 | 2002-06-28 | St Microelectronics Sa | REFERENCE VOLTAGE SUPPLY CIRCUIT |
US7259626B2 (en) * | 2004-12-28 | 2007-08-21 | Broadcom Corporation | Apparatus and method for biasing cascode devices in a differential pair using the input, output, or other nodes in the circuit |
CN1896900B (en) * | 2005-07-13 | 2010-10-06 | 辉达公司 | Energy-level reference circuit |
TW200810231A (en) | 2006-08-11 | 2008-02-16 | Hon Hai Prec Ind Co Ltd | Antenna device |
TWI355772B (en) | 2006-12-29 | 2012-01-01 | Advanced Semiconductor Eng | Carrier with solid antenna structure and manufactu |
US8669754B2 (en) * | 2011-04-06 | 2014-03-11 | Icera Inc. | Low supply regulator having a high power supply rejection ratio |
CN103163935B (en) * | 2011-12-19 | 2015-04-01 | 中国科学院微电子研究所 | Reference current source generating circuit in CMOS integrated circuit |
US9921596B2 (en) * | 2013-12-23 | 2018-03-20 | Marvell Israel (M.I.S.L) Ltd | Power supply noise reduction circuit and power supply noise reduction method |
CN115268551B (en) * | 2021-04-30 | 2024-04-09 | 炬芯科技股份有限公司 | Reference voltage generating circuit, integrated chip and method |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3930172A (en) * | 1974-11-06 | 1975-12-30 | Nat Semiconductor Corp | Input supply independent circuit |
US4491780A (en) * | 1983-08-15 | 1985-01-01 | Motorola, Inc. | Temperature compensated voltage reference circuit |
NL8501882A (en) * | 1985-07-01 | 1987-02-02 | Philips Nv | SIGNAL VOLTAGE CURRENT CONVERTER. |
US4816742A (en) * | 1988-02-16 | 1989-03-28 | North American Philips Corporation, Signetics Division | Stabilized current and voltage reference sources |
US4958122A (en) * | 1989-12-18 | 1990-09-18 | Motorola, Inc. | Current source regulator |
US5015942A (en) * | 1990-06-07 | 1991-05-14 | Cherry Semiconductor Corporation | Positive temperature coefficient current source with low power dissipation |
US5049807A (en) * | 1991-01-03 | 1991-09-17 | Bell Communications Research, Inc. | All-NPN-transistor voltage regulator |
GB2264573B (en) * | 1992-02-05 | 1996-08-21 | Nec Corp | Reference voltage generating circuit |
US5446409A (en) * | 1992-11-30 | 1995-08-29 | Sony Corporation | Cross coupled symmetrical current source unit |
US5367249A (en) * | 1993-04-21 | 1994-11-22 | Delco Electronics Corporation | Circuit including bandgap reference |
US5399914A (en) * | 1993-10-18 | 1995-03-21 | Allegro Microsystems, Inc. | High ratio current source |
-
1994
- 1994-03-30 FR FR9403775A patent/FR2718259A1/en active Pending
-
1995
- 1995-02-09 US US08/386,237 patent/US5576616A/en not_active Expired - Fee Related
- 1995-02-09 TW TW084101121A patent/TW255073B/en active
- 1995-03-22 DE DE69511923T patent/DE69511923T2/en not_active Expired - Fee Related
- 1995-03-22 EP EP95200704A patent/EP0675422B1/en not_active Expired - Lifetime
- 1995-03-28 JP JP7069257A patent/JPH07271461A/en active Pending
- 1995-03-29 CN CN95103190A patent/CN1118461A/en active Pending
- 1995-03-30 KR KR1019950007679A patent/KR950033755A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JPH07271461A (en) | 1995-10-20 |
FR2718259A1 (en) | 1995-10-06 |
KR950033755A (en) | 1995-12-26 |
DE69511923T2 (en) | 2000-03-30 |
TW255073B (en) | 1995-08-21 |
US5576616A (en) | 1996-11-19 |
EP0675422A1 (en) | 1995-10-04 |
CN1118461A (en) | 1996-03-13 |
DE69511923D1 (en) | 1999-10-14 |
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