CN115268551B - Reference voltage generating circuit, integrated chip and method - Google Patents
Reference voltage generating circuit, integrated chip and method Download PDFInfo
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- CN115268551B CN115268551B CN202110482291.2A CN202110482291A CN115268551B CN 115268551 B CN115268551 B CN 115268551B CN 202110482291 A CN202110482291 A CN 202110482291A CN 115268551 B CN115268551 B CN 115268551B
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
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Abstract
The invention discloses a reference voltage generating circuit, an integrated chip and a method, which are used for solving the problem that the performance of reference voltage is unstable due to fluctuation of power supply voltage in the prior art. The reference voltage generation circuit comprises a voltage stabilizing module and a reference voltage generation module, wherein the voltage stabilizing module generates a pre-regulation voltage based on a received power supply voltage and generates a stable voltage based on the power supply voltage and a bias voltage, and the stable voltage does not change along with the change of the power supply voltage; the reference voltage generation module generates an initial reference voltage and a bias voltage based on the pre-adjustment voltage, and generates a target reference voltage based on the stable voltage, the bias voltage being in a linear relationship with the initial reference voltage. Since the target reference voltage is generated by the stable voltage which is generated by the bias voltage in linear relation with the initial reference voltage and does not change with the change of the power supply voltage, the obtained target reference voltage is not influenced by the fluctuation of the power supply voltage, and the performance is more stable.
Description
Technical Field
The present invention relates to the field of power technologies, and in particular, to a reference voltage generating circuit, an integrated chip, and a method.
Background
With the development of an ecological platform of the internet of things (Internet of Things, IOT), higher and higher requirements are put forth on a power supply of a portable electronic product, particularly on a System-on-a-chip (SOC) chip powered by a lithium battery, and the energy consumption requirement is higher and higher, so that low power consumption and high performance have become key performances of the SOC. In order to realize high efficiency, an SOC chip powered by a lithium battery generally has multiple energy states, when the system is in a low power consumption state, only a few real-time power consumption modules are in operation, and a reference voltage source is an indispensable module, and the power consumption of the reference voltage source also determines the static power consumption of the system at the moment, and meanwhile, the performance of the reference voltage source also determines the performance of the low power consumption state of the system.
However, the reference voltage is generated in the prior art manner, and the reference voltage is not stable enough in performance due to the influence of the fluctuation of the power supply voltage.
Disclosure of Invention
The invention provides a reference voltage generating circuit, an integrated chip and a method, which are used for solving the problem of unstable reference voltage performance in the prior art.
In a first aspect, an embodiment of the present invention provides a reference voltage generating circuit, including a voltage stabilizing module and a reference voltage generating module;
the voltage stabilizing module is connected with the reference voltage generating module and is used for generating a pre-regulation voltage based on the received power supply voltage and generating a stable voltage based on the power supply voltage and the bias voltage generated by the reference voltage generating module, wherein the stable voltage does not change along with the change of the power supply voltage;
the reference voltage generation module is used for generating an initial reference voltage and the bias voltage based on the pre-adjustment voltage and generating a target reference voltage based on the stable voltage, wherein the bias voltage is in a linear relation with the initial reference voltage.
In one possible implementation, the voltage stabilizing module includes a first switching tube;
the first end of the first switching tube is used as a first input end of the voltage stabilizing module and is used for receiving the power supply voltage, the second end of the first switching tube is connected with the reference voltage generating module and is used as an output end of the voltage stabilizing module, and the control end of the first switching tube is connected with the reference voltage generating module and is used as a second input end of the voltage stabilizing module.
In one possible implementation manner, the voltage stabilizing module further comprises a current source and a clamping unit;
the first end of the first switching tube is connected with the input end of the current source, is used as the first input end of the voltage stabilizing module and is used for inputting the power supply voltage, the second end of the first switching tube is connected with the reference voltage generating module, is used as the output end of the voltage stabilizing module, and the control end of the first switching tube is respectively connected with the output end of the current source and the first end of the clamping unit;
the second end of the clamping unit is connected with the reference voltage generating module and used as a second input end of the voltage stabilizing module.
In one possible implementation, the clamping unit includes at least one diode;
if the diode is included, the positive electrode of the diode is used as a first end of the clamping unit, and the negative electrode of the diode is used as a second end of the clamping unit;
if a plurality of diodes are included, the plurality of diodes are connected in series, and the positive electrode of the first diode is used as a first end of the clamping unit, and the negative electrode of the last diode is used as a second end of the clamping unit.
In one possible implementation, the reference voltage generating module includes a plurality of positive temperature voltage generating units and a plurality of negative temperature voltage generating units;
the reference voltage generation module is specifically configured to generate a plurality of target reference voltages with different voltage values based on the stable voltage, the number of positive temperature voltage generation units, the number of negative temperature voltage generation units, and the number of combinations of the positive temperature voltage generation units and the negative temperature voltage generation units.
In one possible implementation, the plurality of positive temperature voltage generating units are connected in series, and the plurality of negative temperature voltage generating units are connected in series;
a series-connected negative temperature voltage generating unit connected with the series-connected positive temperature voltage generating unit and used for generating a plurality of negative temperature voltages with different voltage values based on the voltages at two ends of the series-connected negative temperature voltage generating unit and the number of the negative temperature voltage generating units;
the series-connected positive temperature voltage generation unit is connected with the voltage stabilizing module and is used for generating positive temperature voltages with a plurality of different voltage values based on the first stable voltage and the number of the positive temperature voltage generation units, and generating target reference voltages with the plurality of different voltage values based on negative temperature voltages with the plurality of different voltage values and the positive temperature voltages with the plurality of different voltage values; or (b)
A positive temperature voltage generating unit and a negative temperature voltage generating unit as a combination for generating a target reference voltage, a plurality of the combinations generating the target reference voltages of the plurality of different voltage values;
wherein the negative temperature voltage is inversely proportional to the ambient temperature, and the positive temperature voltage is directly proportional to the ambient temperature.
In one possible implementation, the positive temperature voltage generating unit includes a second switching tube and a third switching tube;
the first end of the second switching tube is respectively connected with the control end of the second switching tube and the control end of the third switching tube, is used as the first end of the positive temperature voltage generating unit, is connected with the voltage stabilizing module, is connected with the second end of the positive temperature voltage generating unit connected in series with the voltage stabilizing module, is connected with the second end of the negative temperature voltage generating unit connected in series with the voltage stabilizing module, is connected with the first end of the third switching tube, is used as the third end of the positive temperature voltage generating unit, and is used for outputting target reference voltage;
the second end of the third switching tube is used as the second end of the positive temperature voltage generating unit and is connected with the first end of the positive temperature voltage generating unit connected in series with the second end of the third switching tube or the first end of the negative temperature voltage generating unit connected in series with the second end of the third switching tube.
In one possible implementation manner, two ends of the plurality of positive temperature voltage generating units connected in series are a first end of the positive temperature voltage generating unit and a second end of the positive temperature voltage generating unit;
the first end of the serially connected positive temperature voltage generating unit is connected with the voltage stabilizing module, and the second end of the serially connected positive temperature voltage generating unit is connected with the negative temperature voltage generating unit.
In one possible implementation, the negative temperature voltage generating unit includes a fourth switching tube;
the first end of the fourth switching tube is connected with the control end of the fourth switching tube, serves as the first end of the negative temperature voltage generating unit, is connected with the second end of the negative temperature voltage generating unit connected in series with the first end of the negative temperature voltage generating unit, or is connected with the second end of the positive temperature voltage generating unit connected in series with the second end of the fourth switching tube, serves as the second end of the negative temperature voltage generating unit, and is connected with the first end of the negative temperature voltage generating unit connected in series with the second end of the fourth switching tube, or is grounded.
In a second aspect, an embodiment of the present invention provides an integrated chip, including any one of the above reference voltage generating circuits.
In a third aspect, an embodiment of the present invention provides a reference voltage generating method, including:
generating a preconditioning voltage based on the received supply voltage;
generating an initial reference voltage and a bias voltage in a linear relationship with the initial reference voltage based on the pre-adjusted voltage;
generating a stable voltage that does not vary with the supply voltage based on the supply voltage and the bias voltage;
a target reference voltage is generated based on the regulated voltage.
The invention has the following beneficial effects:
the reference voltage generation circuit comprises a voltage stabilizing module and a reference voltage generation module, wherein the voltage stabilizing module is connected with the reference voltage generation module and is used for generating a pre-regulation voltage based on a received power supply voltage and generating a stable voltage based on the power supply voltage and a bias voltage, and the stable voltage does not change along with the change of the power supply voltage; and the reference voltage generation module is used for generating an initial reference voltage and a bias voltage based on the pre-regulation voltage and generating a target reference voltage based on the stable voltage, wherein the bias voltage is in a linear relation with the initial reference voltage. Since the target reference voltage is generated from the stable voltage, which is generated from the bias voltage in a linear relationship with the initial reference voltage and does not vary with the variation of the supply voltage, the obtained target reference voltage is more stable in performance, and thus the performance of the reference voltage can be improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it will be apparent that the drawings in the following description are only some embodiments of the present invention, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a reference voltage generating circuit according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a voltage stabilizing module according to an embodiment of the present application;
fig. 3 is a schematic structural diagram of another voltage stabilizing module according to an embodiment of the present disclosure;
fig. 4 is a schematic structural diagram of a clamping unit according to an embodiment of the present application;
fig. 5 is a schematic structural diagram of another clamping unit according to an embodiment of the present application;
fig. 6 is a schematic structural diagram of another reference voltage generating circuit according to an embodiment of the present disclosure;
fig. 7 is a schematic structural diagram of another reference voltage generating circuit according to an embodiment of the present application;
fig. 8 is a schematic structural diagram of a positive temperature voltage generating unit according to an embodiment of the present application;
fig. 9 is a schematic structural diagram of a negative temperature voltage generating unit according to an embodiment of the present application;
fig. 10 is a schematic structural diagram of another negative temperature voltage generating unit according to an embodiment of the present disclosure;
fig. 11 is a schematic structural diagram of another reference voltage generating circuit according to an embodiment of the present application;
fig. 12 is a schematic structural diagram of another reference voltage generating circuit according to an embodiment of the present disclosure;
fig. 13 is a schematic structural diagram of another reference voltage generating circuit according to an embodiment of the present application;
fig. 14 is a flowchart of a reference voltage generating method according to an embodiment of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings, and it is apparent that the described embodiments are only some embodiments of the present invention, not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
The following describes specific implementations of a reference voltage generating circuit, an integrated chip, and a method according to embodiments of the present invention with reference to the accompanying drawings.
The embodiment of the application provides a reference voltage generation circuit, an integrated chip and a method, which are used for solving the problem of unstable reference voltage performance in the prior art.
The reference voltage generating circuit, the integrated chip and the method are based on the same inventive concept, and because the reference voltage generating circuit, the integrated chip and the method have similar principles for solving technical problems, the implementation of the reference voltage generating circuit and the integrated chip can be referred to each other, and the repetition is not repeated.
In the following detailed description of the embodiments, a plurality of the embodiments referred to in the present application means two or more. The term "or" referred to in this application describes an association relation of association objects, which means that there may be three kinds of relations, for example, a or B may mean: a exists alone, A and B exist together, and B exists alone. The connection referred to in this application, describing the connection relationship of two objects, may represent two connection relationships, for example, a and B connections, may represent: a is directly connected with B, and A is connected with C and B. In addition, it should be understood that in the description of this application, the words "first," "second," "third," …, etc. are used merely for distinguishing between the descriptions and not for indicating or implying any particular importance or order.
Referring to fig. 1, for a reference voltage generating circuit provided in an embodiment of the present application, a reference voltage generating circuit 200 shown in fig. 1 includes a voltage stabilizing module 201 and a reference voltage generating module 202, where:
the voltage stabilizing module 201 is connected with the reference voltage generating module 202, and is used for generating a pre-regulation voltage V1 based on the received power supply voltage VCC and generating a stable voltage VREG based on the power supply voltage VCC and the bias voltage VSET generated by the reference voltage generating module 202, wherein the stable voltage VREG does not change along with the change of the power supply voltage VCC;
the reference voltage generating module 202 is configured to generate an initial reference voltage VREF1 and a bias voltage VSET based on the pre-adjustment voltage V1, and generate a target reference voltage VREF2 based on the stable voltage VREG, wherein the bias voltage VSET is in a linear relationship with the initial reference voltage VREF 1.
Note that, in fig. 1, the reference voltages include an initial reference voltage VREF1 and a target reference voltage VREF2.
The power supply voltage VCC in the embodiment of the present invention is a power supply voltage.
Because the target reference voltage in the embodiment of the invention is generated by the stable voltage, and the stable voltage is generated by the bias voltage which is in linear relation with the initial reference voltage and does not change along with the change of the power supply voltage, the obtained target reference voltage has more stable performance, thereby being capable of improving the performance of the reference voltage.
In one possible implementation, as shown in fig. 2, the voltage stabilizing module 201 may include a first switching tube M1, where a first end of the first switching tube M1 is used as a first input port of the voltage stabilizing module 201 and is used to receive the supply voltage VCC, a second end of the first switching tube M1 is connected to the reference voltage generating module 202 and is used as an output end of the voltage stabilizing module 201, a pre-regulated voltage V1 or a regulated voltage VREG is input to the reference voltage generating module 202, and a control end of the first switching tube M1 is connected to the reference voltage generating module 202 and is used as a second input end of the voltage stabilizing module 201 and is used to receive the bias voltage VSET.
In another possible implementation manner, as shown in fig. 3, the voltage stabilizing module 201 may further include a current source a and a clamping unit 2011, where a first end of the first switching tube M1 is connected to an input end of the current source a, and is used as a first input end of the voltage stabilizing module 201 to input a supply voltage VCC, a second end of the first switching tube M1 is connected to the reference voltage generating module 202, and is used as an output end of the voltage stabilizing module 201 to input a pre-regulated voltage V1 or a stable voltage VREG to the reference voltage generating module 202, and a control end of the first switching tube M1 is connected to the output end of the current source a and the first end of the clamping unit 2011 respectively; a second terminal of the clamping unit 2011 is connected to the reference voltage generating module 202, and is used as a second input terminal of the voltage stabilizing module 201 to receive the bias voltage VSET.
The clamping unit 2011 in the embodiment of the present invention may include at least one diode, if including a diode, as shown in fig. 4, the anode of the diode D1 is used as a first end of the clamping unit 2011, connected to the output end of the current source a and the control end of the first switching tube M1, and the cathode of the diode D1 is used as a second end of the clamping unit 2011, connected to the reference voltage generating module 202;
if the clamping unit 2011 includes a plurality of diodes, the plurality of diodes are connected in series, as shown in fig. 5, the clamping unit 2011 includes N diodes D1, D2 … … DN-1, DN, wherein the N diodes are connected in series, the anode of the first diode D1 is used as the first terminal of the clamping unit 2011, and the cathode of the last diode DN is used as the second terminal of the clamping unit 2011.
In the embodiment of the present invention, the bias voltage VSET is linearly related to the initial reference voltage VREF, and according to the characteristics of the reference voltage VREF, the bias voltage VSET is a relatively stable voltage.
In the embodiment of the invention, the first switching tube M1 can be an NMOS tube, the first end of the M1 is the drain electrode of the NMOS tube, the second end of the M1 is the source electrode of the NMOS tube, and the control end of the M1 is the grid electrode of the NMOS tube.
The supply voltage generated by the reference voltage generating module 202 when generating the target reference voltage VREF2 is derived from the stabilized voltage VREG generated by the voltage stabilizing module 201, so the target reference voltage VREF2 is smaller than VREG, and similarly, VREG generated by the voltage stabilizing module 201 is smaller than VSET, that is, the gate voltage of the switching transistor M1 is smaller than the source voltage, so that M1 has a voltage stabilizing function, the on threshold of M1 should be close to zero or be a negative value, and thus the switching transistor M1 should be a depletion MOS transistor or a Native MOS transistor.
When the voltage stabilizing module 201 includes a clamping unit, a diode in the clamping unit is a clamping diode, the bias voltage VSET connected to the gate of the switching tube M1 is a stabilized voltage after passing through the clamping diode, and the source of the switching tube M1 generates a stabilized voltage VREG related to the VSET and the clamping voltage. At this time, the supply voltage of the reference voltage generating module 202 is derived from the regulated voltage VREG, so that the generated target reference voltage VREF2 is smaller than the regulated voltage VREG, and similarly VSET is smaller than the regulated voltage VREG, but the voltage output from the positive terminal of the diode after VSET passes through the clamp diode is higher than the target reference voltage VREF2, so that by adjusting the number of diodes in the series clamp, a higher regulated voltage VREG, for example, a voltage higher than VREG by one threshold value can be realized. Therefore, the switching tube M1 may be a normal enhancement MOS tube, so that the stabilized voltage VREG may be generated, and after passing through the stabilized voltage VREG, the reference voltage generating module 202 may generate the target reference voltage VREF2 not controlled by the supply voltage VCC.
In a specific implementation, the reference voltage generation module 202 may include a plurality of positive temperature voltage generation units 2021 and a plurality of negative temperature voltage generation units 2022;
the reference voltage generation module 202 is specifically configured to generate a plurality of target reference voltages with different voltage values based on the stable voltage VREG, the number of positive temperature voltage generation units 2021, the number of negative temperature voltage generation units 2022, and the number of combinations of the positive temperature voltage generation units and the negative temperature voltage generation units.
Wherein the negative temperature voltage is inversely proportional to the ambient temperature, and the positive temperature voltage is directly proportional to the ambient temperature.
Since the target reference voltage VREF2 is generated by superimposing the positive temperature voltage generating unit 2021 and the negative temperature voltage generating unit 2022, the positive temperature voltage generated by the positive temperature voltage generating unit 2021 is in a positive proportion relation with the ambient temperature, and the negative temperature voltage generated by the negative temperature voltage generating unit 2022 is in an inverse proportion relation with the ambient temperature, the target reference voltage VREF2 does not change with the ambient temperature, that is, the target reference voltage is more stable, and a plurality of target reference voltages with different voltage values can be generated, so that the system performance can be improved.
In a specific implementation, as shown in fig. 6, a plurality of positive temperature voltage generating units 2021 may be connected in series, and a plurality of negative temperature voltage generating units 2022 may be connected in series;
the negative temperature voltage generating unit after being connected in series is connected with the positive temperature voltage generating unit after being connected in series and is used for generating a plurality of negative temperature voltages with different voltage values based on the voltages at two ends of the negative temperature voltage generating unit after being connected in series and the number of the negative temperature voltage generating units;
a positive temperature voltage generating unit connected in series with the voltage stabilizing module 201, for generating a plurality of positive temperature voltages with different voltage values based on the stable voltage VREG and the number of the positive temperature voltage generating units, and generating a plurality of reference voltages with different voltage values based on a plurality of negative temperature voltages with different voltage values and a plurality of positive temperature voltages with different voltage values; as can be seen from fig. 6, each positive temperature voltage generating unit can output one reference voltage, so that the reference voltage generating circuit provided by the embodiment of the invention can generate a plurality of initial reference voltages and a plurality of target reference voltages.
In some embodiments, as shown in fig. 7, one positive temperature voltage generating unit and one negative temperature voltage generating unit form one combination, and a plurality of combinations are connected in series, and each combination outputs one reference voltage.
Since each combination can output one reference voltage, a plurality of combinations can output a plurality of reference voltages.
In the specific implementation, as shown in fig. 8, a specific configuration of the positive temperature voltage generating unit will be described taking one positive temperature voltage generating unit and one negative temperature voltage generating unit as an example.
As can be seen from fig. 8, the positive temperature voltage generating unit 2021 may include a second switch M2 and a third switch tube M3, the first end of the second switch tube M2 being connected to the control end of the second switch tube M2 and the control end of the third switch tube M3, respectively, as the first end of the positive temperature voltage generating unit 2021, the second end of the second switch tube M2 being connected to the first end of the third switch tube M3, as the third end of the positive temperature voltage generating unit 2021, for outputting the initial reference voltage VREF1 or the target reference voltage VREF2; a second end of the third switching tube M3 serves as a second end of the positive temperature voltage generating unit 2021.
In the embodiment of the present invention, the switching tube in the positive temperature voltage generating unit 2021 may be a MOS tube.
In fig. 8, the Vi terminal is the gate of the switching transistor M2 and the drain of the switching transistor M2, and Vo is the source of the switching transistor M3, wherein:
VREF-Vo＝(Vi-Vo)-(Vi-VREF)＝V GSM3 -V GSM2 (equation 1)
According to the design requirement of the low power consumption reference voltage, M2 and M3 in the positive temperature voltage generating unit 2021 are both in the subthreshold region, and the drain current of the MOS transistor M3 is:
wherein the method comprises the steps ofIs the width-to-length ratio of the MOS tube M3, I D0 For process-related parameters, n is a non-ideal factor, < >>Has positive temperature characteristics. Then the voltage difference between VREF and Vo is obtained by combining (formula 1) and (formula 2) as follows:
due toIn addition->Then there are:
due to V T Has positive temperature characteristics, so it can be seen from equation 4 that the terminal voltage difference DeltaV GS+ Has positive temperature characteristics.
Based on the schematic structural diagram of the positive temperature voltage generating unit disclosed in fig. 8, two ends of the positive temperature voltage generating unit 2021 connected in series are a first end of the positive temperature voltage generating unit 2021 and a second end of the positive temperature voltage generating unit 2021, the first end of the positive temperature voltage generating unit connected in series is connected with the voltage stabilizing module 201, and the second end of the positive temperature voltage generating unit connected in series is connected with the negative temperature voltage generating unit connected in series.
It should be noted that, in the embodiment of the present invention, V1 and VSET are linearly related to the initial reference voltage VREF1, that is, are generated according to the initial reference voltage VREF1, specifically, VSET may be VREF1, or may be obtained by dividing VREF1 by a voltage dividing module, or may be generated by other modules capable of converting VREF1 into VSET linearly related to VREF 1.
In one possible implementation, the negative temperature voltage generating unit 2022 may include a fourth switching tube M4, where a first end of the fourth switching tube M4 is connected to a control end of the fourth switching tube M4, as a first end of the negative temperature voltage generating unit 2022, and a second end of the fourth switching tube M4 is as a second end of the negative temperature generating unit 2022;
the first end of the serially connected negative temperature voltage generating unit is connected with the serially connected positive temperature voltage generating unit, and the second end of the serially connected negative temperature voltage generating unit is grounded.
The fourth switching tube M4 in the embodiment of the present invention may be a MOS tube or a BJT tube.
Several connection modes of the negative temperature voltage generating unit 2022 are specifically described below.
As shown in fig. 9, a schematic structural diagram of a negative temperature voltage generating unit according to an embodiment of the present invention is provided, the negative temperature voltage generating unit 2022 includes a MOS transistor M4, the drain of the MOS transistor M4 is connected to the gate, the MOS transistor is used as a first end of the negative temperature voltage generating unit 2022 and connected to the positive temperature voltage generating unit 2021, and the source of the MOS transistor M4 is used as a second end of the negative temperature voltage generating unit 2022 and grounded.
Because the MOS tube is in the subthreshold region, the terminal voltage difference is:
from the basic theory, it can be seen that:
Δ MOS _＝(Vi-Vo) MOS ＝V GS (equation 6)
Due to V GS Has negative temperature characteristics, and therefore, as can be seen from equation 6, delta MOS And _ has negative temperature characteristics.
Referring to fig. 10, fig. 10 is a schematic structural diagram of a circuit for generating a reference voltage according to an embodiment of the present invention, and as can be seen from fig. 10, the circuit includes M series positive temperature voltage generating units and N series negative temperature voltage generating units. As can be seen from a combination of equations 4 and 6:
from equation 7, it can be seen that a plurality of VREF can be obtained based on the number of M and N, and thatHas positive temperature characteristics, deltaV GS+ Has negative temperature characteristics, so VREF does not change with temperature.
As shown in fig. 11, another schematic structural diagram of a negative temperature voltage generating unit according to an embodiment of the present invention is provided, where the negative temperature voltage generating unit 2022 includes a BJT Q1, the collector of the BJT Q1 is connected to the base, the negative temperature voltage generating unit 2022 is used as a first end, the negative temperature voltage generating unit 2021 is connected to the positive temperature voltage generating unit 2021, and the emitter of the BJT Q1 is used as a second end of the negative temperature voltage generating unit 2022 and is grounded.
In connection with fig. 11:
wherein I is s Is leakage current.
Terminal voltage delta of BJT tube BJT_ ：
From the basic theory, it can be seen that:
Δ BJT_ ＝(Vi-Vo) BJT ＝V BE (equation 10)
Due to V BE Has negative temperature characteristics, and therefore, from equation 10, delta BJT_ Has negative temperature characteristics.
In order to facilitate understanding, the reference voltage generating circuit provided by the embodiment of the present invention will be specifically described in the following embodiments.
As shown in fig. 12, a voltage stabilizing module 201 includes a depletion type NMOS transistor M1, a drain electrode of M1 is connected to a supply voltage VCC, a gate electrode of M1 is connected to a reference voltage VREF, and a source electrode of M1 generates a stabilized voltage VREG related to the reference voltage VREF, wherein the VREG power supply is approximately equal to or higher than the gate voltage by a positive voltage due to characteristics of the depletion type NMOS transistor; the positive temperature voltage generating unit 2021 in the reference voltage generating module 202 is composed of a MOS transistor M2 and a MOS transistor M3, and the negative temperature voltage generating unit 2022 is composed of a MOS transistor M4.
Based on the above analysis, it can be seen that:
as can be seen in conjunction with fig. 12, initial VREF is VSET.
As shown in fig. 13, the voltage stabilizing module 201 includes a common enhancement NMOS transistor M1, a current source a, and a diode D1, where the gate voltage of the diode D1 is formed by overlapping the clamp diode D1 with the reference voltage VREF, so that the gate voltage of the diode M1 is higher than the source voltage.
As can be seen in conjunction with fig. 13, VSET is linearly dependent on initial VREF.
Based on the same inventive concept, the embodiment of the invention also provides an integrated chip, which comprises any one of the reference voltage generating circuits. The implementation of the integrated chip may refer to the implementation of the reference voltage generating circuit, which is not described herein.
Based on the same inventive concept, the embodiment of the present invention further provides a reference voltage generating method, as shown in fig. 14, including the steps of:
s1401, generating a preconditioning voltage based on the received supply voltage;
s1402, generating an initial reference voltage and a bias voltage in a linear relation with the initial reference voltage based on the pre-adjustment voltage;
s1403, generating a stable voltage that does not vary with the supply voltage based on the supply voltage and the bias voltage;
s1404, generating a target reference voltage based on the stable voltage.
In the embodiment of the invention, the target reference voltage is generated by the stable voltage, and the stable voltage is generated by the bias voltage which is in linear relation with the initial reference voltage and does not change along with the change of the power supply voltage, so that the obtained target reference voltage has more stable performance, and the performance of the reference voltage can be improved.
The present application is described above with reference to block diagrams and/or flowchart illustrations of methods, apparatus (systems) and/or computer program products according to embodiments of the application. It will be understood that one block of the block diagrams and/or flowchart illustration, and combinations of blocks in the block diagrams and/or flowchart illustration, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, and/or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer and/or other programmable data processing apparatus, create means for implementing the functions/acts specified in the block diagrams and/or flowchart block or blocks.
Accordingly, the present application may also be embodied in hardware and/or in software (including firmware, resident software, micro-code, etc.). Still further, the present application may take the form of a computer program product on a computer-usable or computer-readable storage medium having computer-usable or computer-readable program code embodied in the medium for use by or in connection with an instruction execution system. In the context of this application, a computer-usable or computer-readable medium may be any medium that can contain, store, communicate, propagate, or transport the program for use by or in connection with the instruction execution system, apparatus, or device.
It will be apparent to those skilled in the art that various modifications and variations can be made to the present invention without departing from the spirit or scope of the invention. Thus, it is intended that the present invention also include such modifications and alterations insofar as they come within the scope of the appended claims or the equivalents thereof.
Claims (9)
1. The reference voltage generation circuit is characterized by comprising a voltage stabilizing module and a reference voltage generation module;
the voltage stabilizing module is connected with the reference voltage generating module and is used for generating a pre-regulation voltage based on the received power supply voltage and generating a stable voltage based on the power supply voltage and the bias voltage generated by the reference voltage generating module, wherein the stable voltage does not change along with the change of the power supply voltage;
the reference voltage generation module is used for generating an initial reference voltage and the bias voltage based on the pre-adjustment voltage and generating a target reference voltage based on the stable voltage, wherein the bias voltage is in a linear relation with the initial reference voltage;
the voltage stabilizing module comprises a first switching tube, a current source unit and a clamping unit;
the first end of the first switching tube is connected with the input end of the current source, is used as the first input end of the voltage stabilizing module and is used for inputting the power supply voltage, the second end of the first switching tube is connected with the reference voltage generating module, is used as the output end of the voltage stabilizing module, and the control end of the first switching tube is respectively connected with the output end of the current source and the first end of the clamping unit;
the second end of the clamping unit is connected with the reference voltage generating module and used as a second input end of the voltage stabilizing module.
2. The circuit of claim 1, wherein the clamp unit comprises at least one diode;
if the diode is included, the positive electrode of the diode is used as a first end of the clamping unit, and the negative electrode of the diode is used as a second end of the clamping unit;
if a plurality of diodes are included, the plurality of diodes are connected in series, and the positive electrode of the first diode is used as a first end of the clamping unit, and the negative electrode of the last diode is used as a second end of the clamping unit.
3. The circuit according to claim 1 or 2, wherein the reference voltage generation module includes a plurality of positive temperature voltage generation units and a plurality of negative temperature voltage generation units;
the reference voltage generation module is specifically configured to generate a plurality of target reference voltages with different voltage values based on the stable voltage, the number of positive temperature voltage generation units, the number of negative temperature voltage generation units, and the number of combinations of the positive temperature voltage generation units and the negative temperature voltage generation units.
4. The circuit of claim 3, wherein the plurality of positive temperature voltage generating units are connected in series and the plurality of negative temperature voltage generating units are connected in series;
a series-connected negative temperature voltage generating unit connected with the series-connected positive temperature voltage generating unit and used for generating a plurality of negative temperature voltages with different voltage values based on the voltages at two ends of the series-connected negative temperature voltage generating unit and the number of the negative temperature voltage generating units;
the series-connected positive temperature voltage generation unit is connected with the voltage stabilizing module and is used for generating a plurality of positive temperature voltages with different voltage values based on the stable voltage and the number of the positive temperature voltage generation units and generating target reference voltages with different voltage values based on the negative temperature voltages with different voltage values and the positive temperature voltages with different voltage values; or (b)
A positive temperature voltage generating unit and a negative temperature voltage generating unit as a combination for generating a target reference voltage, a plurality of the combinations generating the target reference voltages of the plurality of different voltage values;
wherein the negative temperature voltage is inversely proportional to the ambient temperature, and the positive temperature voltage is directly proportional to the ambient temperature.
5. The circuit of claim 3, wherein the positive temperature voltage generation unit comprises a second switching tube and a third switching tube;
the first end of the second switching tube is respectively connected with the control end of the second switching tube and the control end of the third switching tube, is used as the first end of the positive temperature voltage generating unit, is connected with the voltage stabilizing module, is connected with the second end of the positive temperature voltage generating unit connected in series with the voltage stabilizing module, is connected with the second end of the negative temperature voltage generating unit connected in series with the voltage stabilizing module, is connected with the first end of the third switching tube, is used as the third end of the positive temperature voltage generating unit, and is used for outputting target reference voltage;
the second end of the third switching tube is used as the second end of the positive temperature voltage generating unit and is connected with the first end of the positive temperature voltage generating unit connected in series with the second end of the third switching tube or the first end of the negative temperature voltage generating unit connected in series with the second end of the third switching tube.
6. The circuit of claim 5, wherein the plurality of positive temperature voltage generating units are connected in series at both ends of a first end of the positive temperature voltage generating unit and a second end of the positive temperature voltage generating unit;
the first end of the serially connected positive temperature voltage generating unit is connected with the voltage stabilizing module, and the second end of the serially connected positive temperature voltage generating unit is connected with the negative temperature voltage generating unit.
7. A circuit as claimed in claim 3, wherein the negative temperature voltage generating unit comprises a fourth switching tube;
the first end of the fourth switching tube is connected with the control end of the fourth switching tube, serves as the first end of the negative temperature voltage generating unit, is connected with the second end of the negative temperature voltage generating unit connected in series with the first end of the negative temperature voltage generating unit, or is connected with the second end of the positive temperature voltage generating unit connected in series with the second end of the fourth switching tube, serves as the second end of the negative temperature voltage generating unit, and is connected with the first end of the negative temperature voltage generating unit connected in series with the second end of the fourth switching tube, or is grounded.
8. An integrated chip comprising the reference voltage generating circuit according to any one of claims 1 to 7.
9. A reference voltage generation method, characterized by being applied to the reference voltage generation circuit according to any one of claims 1 to 7, comprising:
generating a preconditioning voltage based on the received supply voltage;
generating an initial reference voltage and a bias voltage in a linear relationship with the initial reference voltage based on the pre-adjusted voltage;
generating a stable voltage that does not vary with the supply voltage based on the supply voltage and the bias voltage;
a target reference voltage is generated based on the regulated voltage.
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