EP0668604A1 - Verfahren zur Herstellung einer Kathode eines Mikrospitzen-Fluoreszenzbildschirm und daraus hergestelltes Produkt - Google Patents

Verfahren zur Herstellung einer Kathode eines Mikrospitzen-Fluoreszenzbildschirm und daraus hergestelltes Produkt Download PDF

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Publication number
EP0668604A1
EP0668604A1 EP95410012A EP95410012A EP0668604A1 EP 0668604 A1 EP0668604 A1 EP 0668604A1 EP 95410012 A EP95410012 A EP 95410012A EP 95410012 A EP95410012 A EP 95410012A EP 0668604 A1 EP0668604 A1 EP 0668604A1
Authority
EP
European Patent Office
Prior art keywords
cathode
grid
resistive
layer
mesh
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP95410012A
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English (en)
French (fr)
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EP0668604B1 (de
Inventor
Jean-Frédéric Clerc
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pixel International SA
Original Assignee
Pixel International SA
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Publication date
Application filed by Pixel International SA filed Critical Pixel International SA
Publication of EP0668604A1 publication Critical patent/EP0668604A1/de
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Publication of EP0668604B1 publication Critical patent/EP0668604B1/de
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
    • H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/10—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes
    • H01J31/12—Image or pattern display tubes, i.e. having electrical input and optical output; Flying-spot tubes for scanning purposes with luminescent screen
    • H01J31/123—Flat display tubes
    • H01J31/125—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection
    • H01J31/127—Flat display tubes provided with control means permitting the electron beam to reach selected parts of the screen, e.g. digital selection using large area or array sources, i.e. essentially a source for each pixel group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/30—Cold cathodes
    • H01J2201/319—Circuit elements associated with the emitters by direct integration

Definitions

  • the subject of the present invention is a process for manufacturing a fluorescent microdot screen cathode, as well as the product obtained by this process.
  • It relates to the industrial sector of flat display screens with row-column matrix addressing, and more particularly of display screens using microtip technology, that is to say made up of a vacuum tube formed by two plates of thin glass, the back plate, or cathode plate, comprising a matrix array of field effect emitters deposited by thin film techniques, and the front plate, or anode plate, covered on its internal face with a transparent conductive layer carrying phosphors.
  • each light point (pixel) of the anode is associated with an emissive surface located opposite and made up of a large number of microtips.
  • This emissive surface is defined by the intersection of a line (grid) and a column (cathode conductor) of the matrix.
  • the cathode of a conventional microtip screen consists essentially of four layers deposited successively on a glass or silicon substrate, then etched, namely: a conductive layer playing the role of "column conductors" of cathode, a resistive layer generally made of silicon intended to limit the value of the emission current, an insulating layer and finally a second conductive layer constituting the "line conductors" of the grid. After depositing these layers, holes are formed in the grid and the insulating layer in which the microtips are then deposited.
  • the production of the constituent layers of the cathode requires at least four, and preferably five, photolithographic masking and etching operations, namely an etching of the cathode columns, an etching of the holes, an etching grid lines, etching of cathode contacts, and preferably a partial etching of the resistive layer between the cathode columns to avoid leaks and couplings between columns.
  • the images formed by a microtip screen are observed through the anode plate and it is the side of the phosphors opposite to that which receives the electrons which is seen, that is to say the least bright.
  • An object of the present invention is to simplify the manufacture of the cathode of microtip fluorescent screens by reducing the number of masking levels to three instead of five.
  • Another object of the present invention is to make said cathode transparent to obtain an improvement in light efficiency by allowing observation of the luminescent material from the side where the electrons strike it, through the cathode.
  • intersection of a row and a column defines an image point 7 or pixel ( Figure 1).
  • a column conductor 2 consists of an openwork or mesh strip.
  • Each grid line is made of meshes consisting of square conductive elements 6 linked together by fine conductive bridges 8 (for the sake of simplification in FIG. 2, only the longitudinal bridges have been represented; it is clear that there are also two transverse bridges for each square as shown in Figure 8).
  • the microtips 4 are located in the grid squares and not in the conductive bridges.
  • Each image point 7 is made up of several squares (four in FIG. 1 but much more in practice). Each square carries several microtips (four in the figure but often 16 in a real device).
  • the respective dimensions of the meshes of the column conductors 2 and of the squares constituting the grid 6 are determined so as to provide empty areas 9 between said squares and each column conductor. We can thus observe the anode phosphors through the cathode plate 1.
  • the access resistance to the microtips is therefore essentially controlled by the geometry of the bars as well as by the resistivity of the resistive layer.
  • This access resistance must be high enough to standardize and limit the emission current of the tips while introducing only a few volts of voltage drop.
  • a screen was produced according to the invention.
  • the resistive layer was made of amorphous silicon offering a resistance of 100 megohms per square, four bars allowed access to each square mesh of 25 micrometers per side; the bars had a length to width ratio of 2.
  • the emission measured was 500 mA per dm2. Results of the same order of magnitude can be obtained with neighboring values.
  • Figure 2 also shows that the electrical continuity along a grid line, from mesh to mesh is ensured by four conductive bridges 8 covering four insulating bars and four resistive bars 10. Since the mask which was used to engrave them is unique , the conductive bars ensuring the continuity of the grid lines and the resistive bars ensuring the access of the cathode current to the microtips have the same width and length.
  • the same shape of the bars must allow the passage of a large current in the grid lines and only allow the passage of a negligible leakage current from one column to another.
  • This leakage current is inversely proportional to the resistance of the resistive layer 3 while the current of polarization of the grids is inversely proportional to the resistance of the upper conductive layer.
  • a resistance per square of 100 megohms is sufficient to guarantee the emission rate required for a screen.
  • the resistance of the gate metal in comparison is very low: 1 ohm per square in the case of the device produced, thanks to a niobium grid 6 400 nm thick. The resistance ratio in the device was therefore 108.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
  • Cold Cathode And The Manufacture (AREA)
  • Electrodes For Cathode-Ray Tubes (AREA)
EP95410012A 1994-02-22 1995-02-20 Verfahren zur Herstellung einer Kathode eines Mikrospitzen-Fluoreszenzbildschirms und daraus resultierendes Produkt Expired - Lifetime EP0668604B1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR9402291 1991-02-22
FR9402291A FR2716571B1 (fr) 1994-02-22 1994-02-22 Procédé de fabrication de cathode d'écran fluorescent à micropointes et produit obtenu par ce procédé .

Publications (2)

Publication Number Publication Date
EP0668604A1 true EP0668604A1 (de) 1995-08-23
EP0668604B1 EP0668604B1 (de) 1997-06-25

Family

ID=9460512

Family Applications (1)

Application Number Title Priority Date Filing Date
EP95410012A Expired - Lifetime EP0668604B1 (de) 1994-02-22 1995-02-20 Verfahren zur Herstellung einer Kathode eines Mikrospitzen-Fluoreszenzbildschirms und daraus resultierendes Produkt

Country Status (5)

Country Link
US (1) US5574333A (de)
EP (1) EP0668604B1 (de)
JP (1) JP3616418B2 (de)
DE (1) DE69500372T2 (de)
FR (1) FR2716571B1 (de)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025291A1 (fr) * 1996-12-06 1998-06-11 Commissariat A L'energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
EP0987729A1 (de) * 1998-09-18 2000-03-22 Pixtech S.A. Mikropunktkathode mit niedriger Entgasung

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100307384B1 (ko) * 1993-01-19 2001-12-17 레오니드 다니로비치 카르포브 전계방출장치
US5952987A (en) * 1996-01-18 1999-09-14 Micron Technology, Inc. Method and apparatus for improved gray scale control in field emission displays
US6144144A (en) * 1997-10-31 2000-11-07 Candescent Technologies Corporation Patterned resistor suitable for electron-emitting device
US6414428B1 (en) 1998-07-07 2002-07-02 Candescent Technologies Corporation Flat-panel display with intensity control to reduce light-centroid shifting
US6879097B2 (en) * 2001-09-28 2005-04-12 Candescent Technologies Corporation Flat-panel display containing electron-emissive regions of non-uniform spacing or/and multi-part lateral configuration
JP3892769B2 (ja) * 2002-07-08 2007-03-14 株式会社 日立ディスプレイズ 表示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
EP0559156A1 (de) * 1992-03-02 1993-09-08 Micron Technology, Inc. Verfahren zur Herstellung selbstausrichtender Gitterstrukturen und Fokussringen

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL9100122A (nl) * 1991-01-25 1992-08-17 Philips Nv Weergeefinrichting.
US5259799A (en) * 1992-03-02 1993-11-09 Micron Technology, Inc. Method to form self-aligned gate structures and focus rings
KR0129678B1 (en) * 1992-05-22 1998-04-06 Futaba Denshi Kogyo Kk Fluorescent display device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0234989A1 (de) * 1986-01-24 1987-09-02 Commissariat A L'energie Atomique Herstellungsverfahren einer feldeffektangeregten Kathodenlumineszenz-Wiedergabevorrichtung
EP0559156A1 (de) * 1992-03-02 1993-09-08 Micron Technology, Inc. Verfahren zur Herstellung selbstausrichtender Gitterstrukturen und Fokussringen

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998025291A1 (fr) * 1996-12-06 1998-06-11 Commissariat A L'energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
FR2756969A1 (fr) * 1996-12-06 1998-06-12 Commissariat Energie Atomique Ecran d'affichage comprenant une source d'electrons a micropointes, observable a travers le support des micropointes, et procede de fabrication de cette source
US6133690A (en) * 1996-12-06 2000-10-17 Commissariat A L'energie Atomique Display screen comprising a source of electrons with microtips, capable of being observed through the microtip support, and method for making this source
EP0987729A1 (de) * 1998-09-18 2000-03-22 Pixtech S.A. Mikropunktkathode mit niedriger Entgasung
FR2783633A1 (fr) * 1998-09-18 2000-03-24 Pixtech Sa Cathode a micropointes a faible degazage

Also Published As

Publication number Publication date
JP3616418B2 (ja) 2005-02-02
EP0668604B1 (de) 1997-06-25
FR2716571B1 (fr) 1996-05-03
JPH0850852A (ja) 1996-02-20
DE69500372D1 (de) 1997-07-31
FR2716571A1 (fr) 1995-08-25
DE69500372T2 (de) 1997-10-09
US5574333A (en) 1996-11-12

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