EP0331992A2 - Transducteur de son capacitif - Google Patents

Transducteur de son capacitif Download PDF

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Publication number
EP0331992A2
EP0331992A2 EP89103276A EP89103276A EP0331992A2 EP 0331992 A2 EP0331992 A2 EP 0331992A2 EP 89103276 A EP89103276 A EP 89103276A EP 89103276 A EP89103276 A EP 89103276A EP 0331992 A2 EP0331992 A2 EP 0331992A2
Authority
EP
European Patent Office
Prior art keywords
membrane
electrode structure
capacitive
membrane unit
counter electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP89103276A
Other languages
German (de)
English (en)
Other versions
EP0331992B1 (fr
EP0331992A3 (fr
Inventor
Wolfgang Dipl.-Ing. Kühnel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sennheiser Electronic GmbH and Co KG
Original Assignee
Sennheiser Electronic GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sennheiser Electronic GmbH and Co KG filed Critical Sennheiser Electronic GmbH and Co KG
Publication of EP0331992A2 publication Critical patent/EP0331992A2/fr
Publication of EP0331992A3 publication Critical patent/EP0331992A3/fr
Application granted granted Critical
Publication of EP0331992B1 publication Critical patent/EP0331992B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
    • H04R19/00—Electrostatic transducers
    • H04R19/005—Electrostatic transducers using semiconductor materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/43—Electric condenser making
    • Y10T29/435—Solid dielectric type

Definitions

  • the invention relates to a capacitive sound transducer, which consists of a membrane unit and at least one fixed counter-electrode structure made of semiconducting material.
  • the converter serves as a microphone for converting sound pressure changes into electrical signals.
  • Capacitive microphones based on the previous electrostatic principle consist of a membrane and at least one fixed counter electrode.
  • the membrane has a certain tensile stress with which the acoustic properties of the microphone capsule can be influenced.
  • the counter electrode is provided with channels and holes, on the one hand so that the air can flow out of the air gap delimited by the membrane and counter electrode into a back volume of the transducer and on the other hand to reduce the attenuation losses in the air gap, which reduce the sensitivity of the microphone and the frequency response influence.
  • the signal conversion is done by evaluating the relative change in capacitance of the converter.
  • the newer methods of semiconductor technology allow the production of miniature transducers in a micromechanical way, for example based on silicon.
  • the structure of a silicon microphone is described in the literature reference KAPAZITITVE SILICON SENSORS FOR HEARING SOUND APPLICATIONS, published in 1986 by VDI-Verlag, ISBN 3-18-14161o-9.
  • This transducer which is manufactured in a micromechanical way, has the dimensions of approx. 1.6 x 2 xo, 6 mm3.
  • the active membrane area exists from a silicon nitride layer coated with a metal layer, which, separated by an air gap, is opposed by a counterelectrode also made of silicon.
  • Miniature microphones manufactured using semiconductor technology have particular disadvantages which are caused by attenuation losses in the very narrow air gap. If the membrane is excited to oscillate by a periodic alternating pressure, a flow forms in the air gap. However, the narrower the air gap, the higher the flow resistance, since the losses are primarily caused by friction on the walls. The flow resistance is also frequency dependent; it increases with increasing frequencies, so that the sensitivity to higher frequencies drops sharply. Since the attenuation losses do not increase linearly with a gap narrowing but progressively, the negative influence on microphones of the type described is particularly high. The possibility of perforating the counter electrode is currently not available due to its small size and lack of technology. With the microphone specified in the literature reference, the sensitivity therefore drops to values below -6o dB due to air gap losses, based on 1 V / Pa, and the frequency response is limited to a few kilohertz.
  • Air gap damping that occurs between the membrane and counter electrode could be reduced by reducing the lateral dimensions of the counter electrode. Lateral dimensions are the dimensions perpendicular to the direction of air flow. Such reductions also reduce the converter's resting capacity. The lower limit thereof is approximately 1 pF with respect to the level of the signal obtained in a low-frequency circuit. A reduction in the counter-electrode dimensions, which could lead to a reduction in the flow resistance, is therefore no longer an option with this low resting capacity.
  • the invention has set itself the task of creating a miniature microphone produced using the means of semiconductor technology, in which the active surface of the membrane is good Efficiency as in previously known microphones is retained, but the attenuation losses occurring in the air gap are reduced by a suitable design of the counterelectrode in such a way that the disadvantages of previously known microphones are avoided.
  • This object is achieved with the features specified in the characterizing part of patent claim 1.
  • a counterelectrode which is significantly smaller in its lateral dimensions and inevitably also leads to lower attenuation losses, can be used if it is assumed that the output signal of the converter is obtained by the relative change in its quiescent capacitance. According to the invention, therefore, smaller resting capacities can be used if the input capacitance of an active element is controlled by the movements of the membrane.
  • Field effect transistors have gate-channel capacitances in the range of 1o ⁇ 15F, that is 1 / 1ooo of the above-mentioned membrane counterelectrode capacitance of 1 pF. If the drain-channel-source structure of a field effect transistor is arranged opposite a membrane, the flow losses are largely eliminated due to the very small dimensions of the counterelectrode structure required. This effect already occurs when the width of the counter electrode structure is approximately one tenth of the dimensions of the active membrane area.
  • FIG. 1 The basic structure of a capacitive sound transducer according to the invention, hereinafter called the FET microphone, is shown in FIG. 1.
  • a membrane metallized with aluminum, for example, is located, separated by an air gap d L, above a drain-channel-source structure, which is called the counter-electrode structure in the following.
  • the channel zone of this structure is covered with an oxide protective layer.
  • a weakly p-doped silicon substrate forms the channel zone L, the heavily n-doped electrodes form the drain and source of the FET. For example, this is an N-channel enhancement type.
  • the voltage U GS applied between the membrane and the source connection determines the operating point of the field effect transistor.
  • the FET microphone is advantageously operated in a source circuit. This is shown in FIG. 3, as is the associated small-signal equivalent circuit.
  • the operating voltage U B is supplied to the microphone via the drain resistor R d , which can be integrated directly on the chip forming the counter electrode.
  • the microphone output voltage U a is tapped at the drain connection; the membrane is biased against the source with the voltage U GS .
  • the current source with the mechanical-electrical slope S me is controlled by the membrane deflection X.
  • the impressed current produces a voltage drop in the drain resistor R d which corresponds to the output voltage U a .
  • the mechanical equivalent circuit shown in Fig. 2 is used to calculate the frequency response and sensitivity of the FET microphone.
  • R S (w) and M S (w) represent the radiation impedance Z mS of the membrane, M M the mass and C M the compliance of the membrane, which vibrates with the rapid v m .
  • the rear air volume is represented by the compliance C V.
  • the volume results from the wafer thickness, which represents the back volume height. It is 28o um.
  • C V 2.866 x 1o ⁇ 3 sec2 / kg.
  • the mass, compliance and frictional losses of the air in the air gap can be neglected, since the width of the air gap and the width of the drain-channel-source structure are considerably smaller than the lateral dimensions of the membrane and the openings in the back volume.
  • the microphone sensitivity increases proportionally with the mechanical-electrical slope S me and the drain resistance R D.
  • these cannot be increased arbitrarily, since the available level of the operating voltage U B and the maximum adjustable electrical membrane bias U GS (breakdown field strength in the channel) represent upper limits.
  • a large total resilience C ges requires a "soft" membrane (high resilience C M) and a large back volume (C V).
  • C M high resilience
  • C V back volume
  • the small membrane area A of subminiature transducers is an inherent problem.
  • Fig. 4 shows a graphical representation of the dependence of the sensitivity M e on the frequency for different mechanical membrane tensions and back volumes.
  • the FET microphone consists of two chips, the upper one carrying the membrane 2 as the membrane unit 1 and the lower one carrying the drain-channel-source structure 8 of the FET as the counter electrode structure 3.
  • the membrane 2 consists of a 150 nm thick layer 4 made of silicon nitride, the mechanical stress properties of which can be influenced by ion implantations during the manufacturing process.
  • the membrane 2 is held by a support frame 2.1, which surrounds the membrane in the form of a wall and consists of the semiconducting base material, preferably silicon. It is vapor-coated on its underside with a 100 nm aluminum layer 5. This vaporization represents the gate of the FET.
  • two trough-shaped pits 6 and 7 are introduced by plasma etching, which form the back volume of the microphone. Between the pits there is an 8 ⁇ m-wide web 8 which carries the drain-channel-source structure 9, 10 and 11 of the FET. The distance between the channel 10 and the aluminum layer of the membrane 5 is 2 ⁇ m.
  • a compensation hole for the static air pressure is located in the silicon oxide edge 12 of the counterelectrode chip, provided that the microphone capsule is to work as a pressure transducer with an acoustically closed volume.
  • the converter described in FIG. 5 can also be expanded to a push-pull converter by using a second counter-electrode structure with a suitably shaped web similar to the web 8 in the depression of the membrane unit 1 predetermined by the wall. In this case, the membrane 2 must then be metallized on both sides. If the transducer is to function as a push-pull transducer in the manner described or if a pressure gradient characteristic is to be obtained in accordance with another expedient embodiment, the volumes in front of or behind the diaphragm are to be connected to the external sound field via openings. 5, such openings are shown with the reference numerals 14 and 15, for example.
  • the N or P-channel enrichment principle was first used in the counter-electrode structure for the channel zone.
  • the depletion principle can also advantageously be used for the channel zone. Since an operating point is already specified here in the FET circuit, the separate bias for the gate can be omitted here, since it can itself be generated in a known manner via a resistor used in the source circuit.
  • a great advantage of a capacitive transducer according to the invention is that a relatively large active membrane area, which is required for good acoustic efficiency of the transducer, is only a small part of the membrane area opposite a counter-electrode structure, and thus the flow losses are negligibly small. This results in a large linear transmission range with very good sensitivity, as can be seen from FIG. 4. Furthermore, the noise behavior of the converter is extremely favorable, since the noise component caused by damping in the air gap is very low due to the principle. Capacitive converters are mostly operated in the so-called low-frequency circuit and therefore require a series resistor, the thermal noise of which also increases with increasing resistance. Decreasing converter quiescent capacitances in miniature microphones require increasing series resistances at the same lower cut-off frequency, which was an unsolvable problem in the previous versions. Since the FET microphone does not require a series resistor, the noise component has also been significantly reduced.
  • the noise behavior can also be improved by operating a plurality of FET microphones which have arisen jointly on the wafer in parallel as a microphone unit.

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Acoustics & Sound (AREA)
  • Signal Processing (AREA)
  • Electrostatic, Electromagnetic, Magneto- Strictive, And Variable-Resistance Transducers (AREA)
  • Pressure Sensors (AREA)
  • Circuit For Audible Band Transducer (AREA)
  • Measuring Fluid Pressure (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
EP89103276A 1988-03-05 1989-02-24 Transducteur de son capacitif Expired - Lifetime EP0331992B1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3807251 1988-03-05
DE3807251A DE3807251A1 (de) 1988-03-05 1988-03-05 Kapazitiver schallwandler

Publications (3)

Publication Number Publication Date
EP0331992A2 true EP0331992A2 (fr) 1989-09-13
EP0331992A3 EP0331992A3 (fr) 1991-07-03
EP0331992B1 EP0331992B1 (fr) 1994-08-31

Family

ID=6348950

Family Applications (1)

Application Number Title Priority Date Filing Date
EP89103276A Expired - Lifetime EP0331992B1 (fr) 1988-03-05 1989-02-24 Transducteur de son capacitif

Country Status (6)

Country Link
US (1) US4922471A (fr)
EP (1) EP0331992B1 (fr)
JP (1) JPH01316099A (fr)
AT (1) ATE110919T1 (fr)
CA (1) CA1298396C (fr)
DE (2) DE3807251A1 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2697675A1 (fr) * 1992-11-05 1994-05-06 Suisse Electronique Microtech Procédé de fabrication de transducteurs capacitifs intégrés.
WO2007062975A1 (fr) 2005-11-29 2007-06-07 Robert Bosch Gmbh Structure micromecanique destinee a recevoir et/ou a emettre des signaux acoustiques, procede de production et utilisation associes

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US5146435A (en) * 1989-12-04 1992-09-08 The Charles Stark Draper Laboratory, Inc. Acoustic transducer
DE4314888C1 (de) * 1993-05-05 1994-08-18 Ignaz Eisele Verfahren zum Abscheiden einer ganzflächigen Schicht durch eine Maske und optionalem Verschließen dieser Maske
US5446413A (en) * 1994-05-20 1995-08-29 Knowles Electronics, Inc. Impedance circuit for a miniature hearing aid
US5452268A (en) * 1994-08-12 1995-09-19 The Charles Stark Draper Laboratory, Inc. Acoustic transducer with improved low frequency response
US5894452A (en) * 1994-10-21 1999-04-13 The Board Of Trustees Of The Leland Stanford Junior University Microfabricated ultrasonic immersion transducer
US5619476A (en) * 1994-10-21 1997-04-08 The Board Of Trustees Of The Leland Stanford Jr. Univ. Electrostatic ultrasonic transducer
TW387198B (en) * 1997-09-03 2000-04-11 Hosiden Corp Audio sensor and its manufacturing method, and semiconductor electret capacitance microphone using the same
US5982709A (en) * 1998-03-31 1999-11-09 The Board Of Trustees Of The Leland Stanford Junior University Acoustic transducers and method of microfabrication
EP1093685A4 (fr) * 1998-06-05 2004-09-01 Knowles Electronics Llc Recepteur a semi-conducteurs
FI105880B (fi) 1998-06-18 2000-10-13 Nokia Mobile Phones Ltd Mikromekaanisen mikrofonin kiinnitys
US6088463A (en) 1998-10-30 2000-07-11 Microtronic A/S Solid state silicon-based condenser microphone
US6366678B1 (en) * 1999-01-07 2002-04-02 Sarnoff Corporation Microphone assembly for hearing aid with JFET flip-chip buffer
US6522762B1 (en) * 1999-09-07 2003-02-18 Microtronic A/S Silicon-based sensor system
WO2001050814A1 (fr) * 2000-01-06 2001-07-12 Sarnoff Corporation Ensemble microphone avec separateur a transistor a effet de champ a jonctions (jfet) a puce a protuberance pour appareil de correction auditive
DE10026474B4 (de) * 2000-05-27 2005-06-09 Sennheiser Electronic Gmbh & Co. Kg Wandler mit halbleitender Membran
US6842964B1 (en) 2000-09-29 2005-01-18 Tucker Davis Technologies, Inc. Process of manufacturing of electrostatic speakers
US6647368B2 (en) 2001-03-30 2003-11-11 Think-A-Move, Ltd. Sensor pair for detecting changes within a human ear and producing a signal corresponding to thought, movement, biological function and/or speech
US6671379B2 (en) 2001-03-30 2003-12-30 Think-A-Move, Ltd. Ear microphone apparatus and method
US7065224B2 (en) * 2001-09-28 2006-06-20 Sonionmicrotronic Nederland B.V. Microphone for a hearing aid or listening device with improved internal damping and foreign material protection
US7142682B2 (en) * 2002-12-20 2006-11-28 Sonion Mems A/S Silicon-based transducer for use in hearing instruments and listening devices
US7415121B2 (en) * 2004-10-29 2008-08-19 Sonion Nederland B.V. Microphone with internal damping
US20060233412A1 (en) * 2005-04-14 2006-10-19 Siemens Audiologische Technik Gmbh Microphone apparatus for a hearing aid
DE102005017357A1 (de) * 2005-04-14 2006-10-26 Siemens Audiologische Technik Gmbh Mikrofonvorrichtung für ein Hörgerät
DE102005031601B4 (de) * 2005-07-06 2016-03-03 Robert Bosch Gmbh Kapazitives, mikromechanisches Mikrofon
EP1742506B1 (fr) * 2005-07-06 2013-05-22 Epcos Pte Ltd Ensemble microphone avec préamplificateur de type P à l'étage d'entrée
US7317234B2 (en) * 2005-07-20 2008-01-08 Douglas G Marsh Means of integrating a microphone in a standard integrated circuit process
DE102005043690B4 (de) * 2005-09-14 2019-01-24 Robert Bosch Gmbh Mikromechanisches Mikrofon
US7983433B2 (en) 2005-11-08 2011-07-19 Think-A-Move, Ltd. Earset assembly
US7502484B2 (en) 2006-06-14 2009-03-10 Think-A-Move, Ltd. Ear sensor assembly for speech processing
US20080042223A1 (en) * 2006-08-17 2008-02-21 Lu-Lee Liao Microelectromechanical system package and method for making the same
US20080075308A1 (en) * 2006-08-30 2008-03-27 Wen-Chieh Wei Silicon condenser microphone
US20080083958A1 (en) * 2006-10-05 2008-04-10 Wen-Chieh Wei Micro-electromechanical system package
US20080083957A1 (en) * 2006-10-05 2008-04-10 Wen-Chieh Wei Micro-electromechanical system package
US7894622B2 (en) 2006-10-13 2011-02-22 Merry Electronics Co., Ltd. Microphone
TWI336770B (en) 2007-11-05 2011-02-01 Ind Tech Res Inst Sensor
US8208671B2 (en) * 2008-01-16 2012-06-26 Analog Devices, Inc. Microphone with backside cavity that impedes bubble formation
US8855350B2 (en) * 2009-04-28 2014-10-07 Cochlear Limited Patterned implantable electret microphone
WO2011123552A1 (fr) * 2010-03-30 2011-10-06 Otologics, Llc Microphone à électret à faible bruit
DE102011002457A1 (de) * 2011-01-05 2012-07-05 Robert Bosch Gmbh Mikromechanische Mikrofoneinrichtung und Verfahren zum Herstellen einer mikromechanischen Mikrofoneinrichtung

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JPS59171298A (ja) * 1983-03-17 1984-09-27 Matsushita Electric Ind Co Ltd マイクロホン装置
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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2697675A1 (fr) * 1992-11-05 1994-05-06 Suisse Electronique Microtech Procédé de fabrication de transducteurs capacitifs intégrés.
EP0596456A1 (fr) * 1992-11-05 1994-05-11 CSEM, Centre Suisse d'Electronique et de Microtechnique S.A. Procédé de fabrication de transducteurs capacitifs intégrés
US5408731A (en) * 1992-11-05 1995-04-25 Csem Centre Suisse D'electronique Et De Microtechnique S.A. - Rechere Et Developpement Process for the manufacture of integrated capacitive transducers
WO2007062975A1 (fr) 2005-11-29 2007-06-07 Robert Bosch Gmbh Structure micromecanique destinee a recevoir et/ou a emettre des signaux acoustiques, procede de production et utilisation associes
US7902615B2 (en) 2005-11-29 2011-03-08 Robert Bosch Gmbh Micromechanical structure for receiving and/or generating acoustic signals, method for producing a micromechanical structure, and use of a micromechanical structure

Also Published As

Publication number Publication date
US4922471A (en) 1990-05-01
EP0331992B1 (fr) 1994-08-31
CA1298396C (fr) 1992-03-31
EP0331992A3 (fr) 1991-07-03
JPH01316099A (ja) 1989-12-20
DE58908250D1 (de) 1994-10-06
ATE110919T1 (de) 1994-09-15
DE3807251A1 (de) 1989-09-14

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