EP0097338A3 - Referenzspannungserzeugungsvorrichtung - Google Patents

Referenzspannungserzeugungsvorrichtung Download PDF

Info

Publication number
EP0097338A3
EP0097338A3 EP83105935A EP83105935A EP0097338A3 EP 0097338 A3 EP0097338 A3 EP 0097338A3 EP 83105935 A EP83105935 A EP 83105935A EP 83105935 A EP83105935 A EP 83105935A EP 0097338 A3 EP0097338 A3 EP 0097338A3
Authority
EP
European Patent Office
Prior art keywords
generating device
reference voltage
voltage generating
gate electrode
mos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP83105935A
Other languages
English (en)
French (fr)
Other versions
EP0097338A2 (de
Inventor
Shoichi Ohzeki
Toji Mukai
Nobuaki Miyakawa
Takahide Ikeda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Hitachi Power Semiconductor Device Ltd
Original Assignee
Hitachi Ltd
Hitachi Haramachi Electronics Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Haramachi Electronics Ltd filed Critical Hitachi Ltd
Publication of EP0097338A2 publication Critical patent/EP0097338A2/de
Publication of EP0097338A3 publication Critical patent/EP0097338A3/de
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/245—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the temperature
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/24—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only
    • G05F3/242—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage
    • G05F3/247—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations wherein the transistors are of the field-effect type only with compensation for device parameters, e.g. channel width modulation, threshold voltage, processing, or external variations, e.g. temperature, loading, supply voltage producing a voltage or current as a predetermined function of the supply voltage

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)
  • Semiconductor Integrated Circuits (AREA)
EP83105935A 1982-06-18 1983-06-16 Referenzspannungserzeugungsvorrichtung Withdrawn EP0097338A3 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP103756/82 1982-06-18
JP10375682A JPS58221418A (ja) 1982-06-18 1982-06-18 基準電圧発生装置

Publications (2)

Publication Number Publication Date
EP0097338A2 EP0097338A2 (de) 1984-01-04
EP0097338A3 true EP0097338A3 (de) 1984-10-24

Family

ID=14362382

Family Applications (1)

Application Number Title Priority Date Filing Date
EP83105935A Withdrawn EP0097338A3 (de) 1982-06-18 1983-06-16 Referenzspannungserzeugungsvorrichtung

Country Status (2)

Country Link
EP (1) EP0097338A3 (de)
JP (1) JPS58221418A (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1179823B (it) * 1984-11-22 1987-09-16 Cselt Centro Studi Lab Telecom Generatore di tensione differenziale di rifferimento per circuiti integrati ad alimentazione singola in tecnologia nmos
KR900019026A (ko) * 1989-05-11 1990-12-22 김광호 반도체 장치의 기준전압 발생회로
JP4830088B2 (ja) * 2005-11-10 2011-12-07 学校法人日本大学 基準電圧発生回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2016801A (en) * 1978-03-08 1979-09-26 Hitachi Ltd Reference voltage generating device
US4170818A (en) * 1975-06-16 1979-10-16 Hewlett-Packard Company Barrier height voltage reference
US4206946A (en) * 1979-03-19 1980-06-10 General Motors Corporation Vehicle convertible seat and locking arrangement
DE2951835A1 (de) * 1978-12-22 1980-07-10 Centre Electron Horloger Integrierte bezugsspannungsquelle

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5539411A (en) * 1978-09-13 1980-03-19 Hitachi Ltd Reference voltage generator

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4170818A (en) * 1975-06-16 1979-10-16 Hewlett-Packard Company Barrier height voltage reference
GB2016801A (en) * 1978-03-08 1979-09-26 Hitachi Ltd Reference voltage generating device
DE2951835A1 (de) * 1978-12-22 1980-07-10 Centre Electron Horloger Integrierte bezugsspannungsquelle
US4206946A (en) * 1979-03-19 1980-06-10 General Motors Corporation Vehicle convertible seat and locking arrangement

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ELECTRONIC ENGINEERING, vol. 52, no. 638, May 1980, pages 65-85, London, GB; M.A. REHMAN: "Integrated circuit voltage reference" *
IEEE JOURNAL OF SOLID-STATE CIRCUITS, vol. SC-15, no. 3, June 1980, pages 264-269, IEEE, New York, US; H.J. OGUEY et al.: "MOS voltage reference based on polysilicon gate work function difference" *

Also Published As

Publication number Publication date
EP0097338A2 (de) 1984-01-04
JPS58221418A (ja) 1983-12-23

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Legal Events

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PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

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AK Designated contracting states

Designated state(s): CH DE FR GB IT LI NL SE

PUAL Search report despatched

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Effective date: 19850228

17Q First examination report despatched

Effective date: 19861113

STAA Information on the status of an ep patent application or granted ep patent

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18W Application withdrawn

Withdrawal date: 19870313

RIN1 Information on inventor provided before grant (corrected)

Inventor name: OHZEKI, SHOICHI

Inventor name: MUKAI, TOJI

Inventor name: MIYAKAWA, NOBUAKI

Inventor name: IKEDA, TAKAHIDE