DK1509642T3 - Anordning til fremstilling af krystalstave med et defineret tværsnit og söjleformet polykrystallinsk struktur ved en digelfri kontinuerlig krystallisering - Google Patents
Anordning til fremstilling af krystalstave med et defineret tværsnit og söjleformet polykrystallinsk struktur ved en digelfri kontinuerlig krystalliseringInfo
- Publication number
- DK1509642T3 DK1509642T3 DK03724889T DK03724889T DK1509642T3 DK 1509642 T3 DK1509642 T3 DK 1509642T3 DK 03724889 T DK03724889 T DK 03724889T DK 03724889 T DK03724889 T DK 03724889T DK 1509642 T3 DK1509642 T3 DK 1509642T3
- Authority
- DK
- Denmark
- Prior art keywords
- crucible
- column
- polycrystalline structure
- crystallization
- shaped polycrystalline
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/08—Downward pulling
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1032—Seed pulling
- Y10T117/1056—Seed pulling including details of precursor replenishment
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10220964A DE10220964B4 (de) | 2002-05-06 | 2002-05-06 | Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation |
PCT/DE2003/001515 WO2003093540A1 (de) | 2002-05-06 | 2003-05-06 | Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation |
Publications (1)
Publication Number | Publication Date |
---|---|
DK1509642T3 true DK1509642T3 (da) | 2007-11-05 |
Family
ID=29285284
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DK03724889T DK1509642T3 (da) | 2002-05-06 | 2003-05-06 | Anordning til fremstilling af krystalstave med et defineret tværsnit og söjleformet polykrystallinsk struktur ved en digelfri kontinuerlig krystallisering |
Country Status (10)
Country | Link |
---|---|
US (1) | US7326297B2 (da) |
EP (1) | EP1509642B1 (da) |
JP (1) | JP4555677B2 (da) |
AT (1) | ATE367462T1 (da) |
AU (1) | AU2003229290A1 (da) |
DE (2) | DE10220964B4 (da) |
DK (1) | DK1509642T3 (da) |
ES (1) | ES2290458T3 (da) |
NO (1) | NO20045319L (da) |
WO (1) | WO2003093540A1 (da) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102005063346B4 (de) * | 2005-04-06 | 2010-10-28 | Pv Silicon Forschungs Und Produktions Gmbh | Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt |
JP5073257B2 (ja) * | 2006-09-27 | 2012-11-14 | Sumco Techxiv株式会社 | 単結晶製造装置及び方法 |
WO2011063795A1 (de) * | 2009-11-24 | 2011-06-03 | Forschungsverbund Berlin E. V. | Verfahren und vorrichtung zur herstellung von einkristallen aus halbleitermaterial |
DE102012213506A1 (de) * | 2012-07-31 | 2014-02-06 | Siltronic Ag | Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102012215677B3 (de) * | 2012-09-04 | 2013-10-10 | Siltronic Ag | Verfahren zum Herstellen eines Einkristalls aus Silizium |
JP2014062044A (ja) * | 2013-12-11 | 2014-04-10 | National Institute For Materials Science | 四角形の単結晶シリコンウェ−ハ |
DE102014207149A1 (de) * | 2014-04-14 | 2015-10-29 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium |
DE102014210936B3 (de) * | 2014-06-06 | 2015-10-22 | Siltronic Ag | Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial |
DE102014226419A1 (de) | 2014-12-18 | 2016-06-23 | Siltronic Ag | Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone |
CN114941171B (zh) * | 2022-05-25 | 2023-03-24 | 宇泽半导体(云南)有限公司 | 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法 |
CN116288650B (zh) * | 2023-05-24 | 2023-08-29 | 苏州晨晖智能设备有限公司 | 以颗粒硅为原料的硅单晶生长装置和生长方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1220832B (de) * | 1964-09-22 | 1966-07-14 | Siemens Ag | Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze |
US4565600A (en) * | 1981-04-27 | 1986-01-21 | Criceram | Processes for the continuous preparation of single crystals |
DE3531610A1 (de) * | 1985-09-04 | 1987-03-05 | Wacker Chemitronic | Verfahren und vorrichtung zur herstellung von siliciumstaeben |
DE4294376T1 (de) * | 1991-12-18 | 1994-01-13 | Mori Nobuyuki | Verfahren und Vorrichtung zum Gießen eines kristallinen Siliziumbarrens mittels Elektronenstrahlschmelzen |
JP2874722B2 (ja) * | 1993-06-18 | 1999-03-24 | 信越半導体株式会社 | シリコン単結晶の成長方法及び装置 |
DE4323793A1 (de) * | 1993-07-15 | 1995-01-19 | Wacker Chemitronic | Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung |
JP2833478B2 (ja) * | 1994-05-18 | 1998-12-09 | 信越半導体株式会社 | シリコン単結晶成長方法 |
JPH08333188A (ja) * | 1995-04-06 | 1996-12-17 | Komatsu Electron Metals Co Ltd | Fz法による半導体単結晶製造装置 |
DE19538020A1 (de) * | 1995-10-12 | 1997-04-17 | Wacker Siltronic Halbleitermat | Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium |
DE19610650B4 (de) * | 1996-03-06 | 2004-03-18 | Forschungsverbund Berlin E.V. | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben |
JP3759807B2 (ja) * | 1997-03-12 | 2006-03-29 | 日本碍子株式会社 | 酸化物単結晶体の製造方法およびその装置 |
-
2002
- 2002-05-06 DE DE10220964A patent/DE10220964B4/de not_active Expired - Fee Related
-
2003
- 2003-05-06 WO PCT/DE2003/001515 patent/WO2003093540A1/de active IP Right Grant
- 2003-05-06 US US10/513,320 patent/US7326297B2/en not_active Expired - Fee Related
- 2003-05-06 EP EP03724889A patent/EP1509642B1/de not_active Expired - Lifetime
- 2003-05-06 JP JP2004501673A patent/JP4555677B2/ja not_active Expired - Fee Related
- 2003-05-06 AU AU2003229290A patent/AU2003229290A1/en not_active Abandoned
- 2003-05-06 AT AT03724889T patent/ATE367462T1/de not_active IP Right Cessation
- 2003-05-06 DE DE50307712T patent/DE50307712D1/de not_active Expired - Lifetime
- 2003-05-06 DK DK03724889T patent/DK1509642T3/da active
- 2003-05-06 ES ES03724889T patent/ES2290458T3/es not_active Expired - Lifetime
-
2004
- 2004-12-03 NO NO20045319A patent/NO20045319L/no not_active Application Discontinuation
Also Published As
Publication number | Publication date |
---|---|
NO20045319L (no) | 2004-12-03 |
DE50307712D1 (de) | 2007-08-30 |
ATE367462T1 (de) | 2007-08-15 |
DE10220964B4 (de) | 2006-11-02 |
DE10220964A8 (de) | 2004-07-08 |
JP2005529046A (ja) | 2005-09-29 |
US7326297B2 (en) | 2008-02-05 |
WO2003093540A1 (de) | 2003-11-13 |
ES2290458T3 (es) | 2008-02-16 |
EP1509642A1 (de) | 2005-03-02 |
JP4555677B2 (ja) | 2010-10-06 |
AU2003229290A1 (en) | 2003-11-17 |
DE10220964A1 (de) | 2003-11-27 |
EP1509642B1 (de) | 2007-07-18 |
US20050188918A1 (en) | 2005-09-01 |
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